CN101252151B - Nanometer silicium hetero-junction pressure-sensitive diode and nanometer silicium hetero-junction pressure sensor - Google Patents
Nanometer silicium hetero-junction pressure-sensitive diode and nanometer silicium hetero-junction pressure sensor Download PDFInfo
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- CN101252151B CN101252151B CN2008100200426A CN200810020042A CN101252151B CN 101252151 B CN101252151 B CN 101252151B CN 2008100200426 A CN2008100200426 A CN 2008100200426A CN 200810020042 A CN200810020042 A CN 200810020042A CN 101252151 B CN101252151 B CN 101252151B
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- pressure
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- sensitive diode
- heterojunction
- silicon heterojunction
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Abstract
The present invention discloses a nano-silicon heterojunction pressure-sensitive diode and a nano-silicon heterojunction pressure sensor. The present invention has the advantages that: by applying the reverse I-V characteristic of nano-silicon/monocrystalline silicon heterostructure in a stress state, the nano-silicon/monocrystalline silicon heterojunction pressure-sensitive diode with good sensibility as well as linear characteristic is manufactured, and the nano-silicon/monocrystalline silicon heterojunction pressure-sensitive diode is applied to manufacture the nano-silicon/monocrystalline silicon heterojunction pressure sensor with good sensibility as well as linear characteristic.
Description
Technical field
The present invention relates to a kind of pressure-sensing device and pressure sensor, relate in particular to a kind of semiconductor pressure-sensitive diode and semiconductor pressure sensor, more specifically say so pressure-sensitive backward diode of nano silicon heterojunction and nano silicon heterojunction pressure sensor.
Background technology
Pressure sensor is a kind of transducer commonly used in the industrial circle, it is with pressure, mechanical quantities such as strain convert electrical quantities to, be widely used in various industrial automatic control environment, relate to water conservancy and hydropower, railway traffic, intelligent building, the production automatic control, Aero-Space, military project, petrochemical industry, oil well, electric power, boats and ships, lathe, numerous industries such as pipeline, progress along with microelectronics and micromachining technology, semiconductor pressure sensor is widely used in industrial automation as the important a member in the pressure sensor, Aero-Space, oil well logging, numerous areas such as automobile engine.So-called semiconductor pressure sensor (semiconductor pressure sensor) is to utilize the piezoresistive effect of semi-conducting material and semiconductor diode, transistorized electric current---the element that the pressure effect of voltage (I-V) relation is made.Therefore, semiconductor pressure sensor can be divided into two classes, and a class is the transducer that constitutes according to the semiconductor pressure resistance effect, and this class is the principal item of present semiconductor pressure sensor; Another kind of is various pressure-sensitive diodes or the transistor of making according to semiconductor PN (or schottky junction) principle that the I-V relation property changes under stress.But the performance of this pressure-sensing device is very unstable, therefore is difficult to technically obtain very big development and apply.Scientific and technological circle to the research that utilizes silicon/crystalline silicon heterogenous junction diode and tunnel diode and make pressure sensor and attempt to obtain stable application continued many decades (referring to W.Rindner, I.Braun, J.Appl.Phys.34 (1963): 1958-1970.; W.Bernard, W.Rindner, H.Roth, J.Appl.Phys.35 (1964): 1860-1862.).Yet, the pressure sensor that utilizes the pressure effect of traditional silicon diode I-V characteristic to make, under forward voltage bias, its electric current is exceedingly fast with different variation of pressure, and its sensitiveness, linear characteristic are very bad, have greatly limited application; The pressure sensor that utilizes the forward I-V characteristic of silicon tunnel diode to make, though good performance is arranged on sensitiveness and linearity, but during the making pressure sensor of using, be difficult to select a suitable shunt resistance and make tunnel diode be operated in normal condition, therefore limited its application equally.
Since the eighties in last century, both at home and abroad the result of study of each research institution shows: Nano thin film (nc-Si:H) is by hydrogenated amorphous shape silicon (a-Si:H) tissue and is embedded in nano-silicon crystal grain formation in the hydrogenated amorphous shape silicon tissue, wherein nano-silicon crystal grain has the quantum dot feature, its transmission mechanism has been different from conventional semiconductor material, and there is a kind of heterojunction quantum dot tunnelling mechanism, this has than amorphous silicon (a-Si) it to exceed several thousand times conductivity, and the relation of conductivity and temperature a little less than.Because architectural feature, Nano thin film has a series of rerum naturas that are different from monocrystalline silicon (c-Si), amorphous silicon and microcrystal silicon (μ c-Si:H) material, and its application prospect aspect electronic device also causes people's extensive concern day by day.The present patent application people is based on the electric conductivity of Nano thin film uniqueness, once submitting a Chinese patent application to number is the patent application of nano silicon heterojunction backward diode of 200710024272 and preparation method thereof, on the basis of the forward and reverse I-V characteristic of this backward diode of research, through concentrating on studies and testing, develop a kind of sensitiveness, nano silicon heterojunction pressure-sensitive diode that linear characteristic is good, and utilize this nano silicon heterojunction pressure-sensitive diode to make a kind of nano silicon heterojunction pressure sensor.
Summary of the invention
The objective of the invention is provides a kind of sensitiveness and the superior nano silicon heterojunction pressure-sensitive diode of linear characteristic in view of the problem that exists in the background technology.
Another object of the present invention provides the silicon heterogenous pressure-sensitive diode of a kind of applying nano and makes a kind of nano silicon heterojunction pressure sensor.
For realizing above-mentioned first purpose, technical scheme of the present invention is the pair of electrodes that comprises monocrystalline silicon substrate, is deposited on Nano thin film on the monocrystalline silicon substrate, is connected with Nano thin film ohm with monocrystalline silicon substrate respectively, described Nano thin film and monocrystalline silicon substrate constitute nanometer silicon/monocrystalline silicon heterojunction structure, the average resistivity of described monocrystalline silicon substrate is 0.001 Ω cm-0.0001 Ω cm, and carrier concentration is 5.0 * 10
19Cm
-3-1.0 * 10
21Cm
-3, described Nano thin film thickness is about 3.0 μ m-8.0 μ m.
Further being provided with is that described monocrystalline silicon substrate is P
+Type mixes, and described Nano thin film is N
+Type mixes, and the two constitutes N
+/ P
+The nanometer silicon/monocrystalline silicon heterojunction structure of type.
Further being provided with is described N
+The type Nano thin film is a phosphorus doping.
Further being provided with is that described electrode is the Al electrode that ohm is connected in monocrystalline silicon substrate, and ohm is connected in the In electrode of Nano thin film.
For realizing above-mentioned second purpose, technical scheme of the present invention is to comprise the nano silicon heterojunction pressure-sensitive diode, the pressure transfer column, Pi Anbiao, constant pressure source, the pressure-bearing platform, conductive base, the affixed pressure-bearing platform of described pressure transfer column one end, another proper being pressed on the positive pole of nano silicon heterojunction pressure-sensitive diode, this pressure transfer column conducts electricity and forms ohm with this electrode and is connected, described skin peace table one utmost point is connected on the pressure transfer column, its another utmost point is connected with the negative pole of constant pressure source, described constant pressure source positive pole is connected by the negative pole of conductive base with the nano silicon heterojunction pressure-sensitive diode, make the nano-silicon pressure-sensitive diode be in reverse-bias state, form the loop.
The negative pole that further setting is described nano silicon heterojunction pressure-sensitive diode compresses and is provided with a conductive base, and this conductive base is connected with negative pole formation ohm of nano-silicon pressure-sensitive diode.
Further being provided with is described conductive base ground connection, and described skin peace off-balancesheet connects the constant pressure source negative pole, and this constant pressure source makes the nano silicon heterojunction pressure-sensitive diode be in reverse-bias state.
The described pressure transfer column outside further is set is connected with the direction retainer that matches, make the pressure transfer column remain on vertical state.
Further being provided with is the described electrode that is connected with pressure transfer column ohm is connected in monocrystalline silicon substrate for ohm aluminium Al electrode, the electrode of described opposite side is connected in the In electrode of Nano thin film for ohm, the described conductive base that is connected with In electrode ohm is the tungsten pedestal, and described pressure transfer column is an aluminium Al post.
The invention has the advantages that applying nano silicon/monocrystalline silicon heterojunction structure reverse I-V characteristic under stress state, made sensitiveness, nano silicon heterojunction pressure-sensitive diode that linear characteristic is good, and used this nano silicon heterojunction pressure-sensitive diode and make a kind of sensitiveness, nano silicon heterojunction pressure sensor that linear characteristic is good.
Below in conjunction with specification drawings and specific embodiments the present invention is done further introduction.
Figure of description
Fig. 1 specific embodiment of the invention nano silicon heterojunction pressure-sensitive diode structural representation
Fig. 2 nano silicon heterojunction pressure-sensitive diode of the present invention is at the I-V performance diagram of the different stress situations of reverse-bias state
Fig. 3 specific embodiment of the invention nano silicon heterojunction pressure sensor structure schematic diagram
Fig. 4 specific embodiment of the invention I portion enlarged drawing
Embodiment
The embodiment of nano silicon heterojunction pressure-sensitive diode of the present invention as described in Figure 1, the pair of electrodes 13 that comprises monocrystalline silicon substrate 11, is deposited on Nano thin film 12 on the monocrystalline silicon substrate, is connected with Nano thin film ohm with monocrystalline silicon substrate respectively, described Nano thin film 12 constitutes nanometer silicon/monocrystalline silicon heterojunction structure with monocrystalline silicon substrate 11, the average resistivity of described monocrystalline silicon substrate is 0.0006 Ω cm, and carrier concentration is 2.4 * 10
20Cm
-3, described Nano thin film thickness is about 3.0 μ m-8.0 μ m, and described monocrystalline silicon substrate is P
+Type mixes, and described Nano thin film is N
+Type mixes, and the two constitutes N
+/ P
+The nanometer silicon/monocrystalline silicon heterojunction structure of type, described N
+The type Nano thin film is a phosphorus doping, and described electrode is the Al electrode that ohm is connected in monocrystalline silicon substrate, and ohm is connected in the In electrode of Nano thin film.
Its preparation process is as follows:
A, the about 300 μ m of selection thickness, average resistivity 0.0006 Ω cm, carrier concentration are 2.4 * 10
20Cm
-3, single face polishing P
+Type monocrystalline silicon is substrate;
B, under the 1293K temperature, thermal oxidation goes out the thick SiO of about 3.0 μ m-8.0 μ m to monocrystalline substrate
2Layer is at this SiO
2About 3 (π * 1 of etching on the layer
2) mm
2Square hole;
C, use plasma chemical vapor deposition, to feed phosphine in the silane as hybrid reaction source gas, in the PECVD reative cell, the Nano thin film of phosphorus is mixed in growth in the substrate square hole, and its technological parameter is:
Background ultimate vacuum: 1.0 * 10
4Pa
Hybrid reaction source gas mixes and compares: PH
3/ SiH
4=8.0vol%-12.0vol%
Select radio frequency source RF frequency: f=13.56MHz during film growth for use
Film growth RF radio frequency power density: 0.6W/cm
2
Film growth underlayer temperature: Ts=523-573K
Dc bias: V is born in film growth
b=-150V
Reaction gas pressure during film growth: P=1 torr (Torr)
D, the outer field Nano thin film of square hole is rejected by photoetching method, in square hole, stay about 3.0 μ m-8.0 μ m thick mix the phosphorus Nano thin film;
Al and In were as two Ohm contact electrodes on e, deposited by electron beam evaporation method were steamed respectively on crystalline silicon substrate and Nano thin film (nc-Si:H), and its technological parameter is:
Background ultimate vacuum: 1.0 * 10
4Pa
Heating current: I=10A
Underlayer temperature: Ts=423K
The thickness of electrode film: 0.5 μ m
The final electrode/(N that forms
+) nc-Si:H/ (P
+) the nanometer silicon/crystalline silicon heterojunction pressure-sensitive diode of c-Si/ electrode.
The oppositely analysis of I-V relation curve under the extraneous mechanical pressure:
In Fig. 2, the absolute value I of reverse current
RIt is bigger than forward current, | I
R|＞| I
F|.I
RWith reverse voltage V
RThe pass be I
R=B
1Exp[(V
R)/B
2] (B wherein
1, B
2Be respectively voltage V
RTempolabile function), can explain with " Zener tunnelling ".When increasing back bias voltage to-6.8V, I
RObviously raise.6.8V approximate 4E
g/ q, E
g≈ 1.7eV is the reference value of the band-gap energy of amorphous silicon, and q is an elementary charge.In the nanometer silicon/monocrystalline silicon heterojunction, the carrier concentration of nano-silicon one side is much smaller than the carrier concentration of monocrystalline silicon, and potential barrier of heterogenous junction mainly is present in nano-silicon one side, and nano-silicon crystal grain is comprised among the amorphous silicon.So, E
g≈ 1.7eV also can be considered the energy gap of nano-silicon.I when back bias voltage reaches 6.8V
RRapid rising can be regarded as the Zener breakdown of nano-silicon but not avalanche breakdown because avalanche breakdown will reach voltage 6E
g/ q is designated as 11V approximately.In Fig. 2, increase pressure causes I
RIncrease, can be summed up as defect state in the pressure inducement nanometer silicon/monocrystalline silicon heterojunction (strong etc. as hanging) density increases.Defect state density became ratio when voltage was constant with pressure, and probability increases with pressure to cause " Zener tunnelling ", so I
RIncrease with pressure.The defect state of pressure inducement is distributed in the P-N knot continuously, and back bias voltage increases will enlarge the potential barrier of heterogenous junction district, has caused in the heterojunction under the pressure state by soft breakdown but not hard breakdown, as shown in Figure 2.Heterojunction also is described simultaneously by Zener breakdown but not avalanche breakdown, because normally hard breakdown of avalanche breakdown.
Can further find I from above analysis and Fig. 2
RSusceptibility and linearity to pressure show the effective ways that pressure signal are converted into the signal of telecommunication.In measuring process, the effect that the pressure of certain limit increases electric current is reversible.Consider intensity, thermal endurance and the chemical stability etc. of silicon, this nanometer silicon/monocrystalline silicon heterojunction diode can be used as pressure sensor.
The present invention is the process of mechanical pressure measurement to external world:
Embodiment as the described nano silicon heterojunction pressure sensor of the present invention of Fig. 3-4, at first make the nano silicon heterojunction pressure-sensitive diode by above-mentioned preparation technology, described ohm is connected in Al electrode 13 lateral surfaces of monocrystalline silicon substrate 11 (as shown in Figure 4), forward compresses the pressure transfer column 2 that ohm connects and size is adaptive with it with it, these pressure transfer column 2 outer ends are connected with pressure-bearing platform 3, and this pressure transfer column outside is connected with adaptive with it direction retainer 4, be pressed in vertically on the nano silicon heterojunction pressure-sensitive diode the pressure transfer column is stable easily, under stress state, keep the pressure transfer column and do not depart from vertical position.This pressure transfer column is electrically connected the negative pole of Pi Anbiao, and the positive pole of this Pi Anbiao connects the negative pole of constant pressure source, this constant pressure source plus earth.The pressure joint pin of present embodiment is the metallic aluminium post among Fig. 3, this metallic aluminium post presses on the Al electrode relatively, certainly the present invention can also adopt other to form metal or the alloy material that ohm is connected with the Al electrode, such as Cu metal, AuCr alloy, AuTi alloy etc.The lateral surface butt that described ohm is connected in the In electrode of Nano thin film is provided with the conductive base 5 of ohm connection with it, this pedestal of present embodiment is the tungsten pedestal, can certainly adopt other to form the metal material that ohm is connected with the In electrode, such as the Au metal, the AuGe alloy, AuGeNi alloy etc., so that make the nano-silicon pressure-sensitive diode stably be placed in this pedestal, making impressed pressure to stablize is pressed on the pressure-sensitive diode vertically, described pedestal ground connection, so and Pi Anbiao, constant pressure source forms the loop and makes diode be in reverse-bias state, can reduce The noise like this.
Open constant pressure source, certain voltage is set, give nano silicon heterojunction pressure-sensitive diode on-load pressure by the pressure-bearing platform of aluminium pressure transfer column.Under certain voltage, measure the reverse current value of this pipe under different ambient pressure states by Pi Anbiao, under the certain voltage, pressure is corresponding with electric current, promptly convert pressure signal to current signal by the present invention, current value conversion and demarcate into force value, just can directly show pressure; Change voltage, pressure is corresponding with new current value, and this is equivalent to change range.That is, the present invention can demarcate Pi Anbiao according to the reverse I-V characteristic curve of nano-silicon pressure-sensitive diode under pressure state that records in advance, and so Pi Anbiao then directly shows pressure reading.
Claims (5)
1. nano silicon heterojunction pressure sensor that utilizes the nano silicon heterojunction pressure-sensitive diode to make, it is characterized in that, comprise the nano silicon heterojunction pressure-sensitive diode, the pressure transfer column, Pi Anbiao, constant pressure source, the pressure-bearing platform, conductive base, described nano silicon heterojunction pressure-sensitive diode comprises monocrystalline silicon substrate, be deposited on the Nano thin film on the monocrystalline silicon substrate, the pair of electrodes that is connected with Nano thin film ohm with monocrystalline silicon substrate respectively, described Nano thin film and monocrystalline silicon substrate constitute nanometer silicon/monocrystalline silicon heterojunction structure, the average resistivity of described monocrystalline silicon substrate is 0.001 Ω cm-0.0001 Ω cm, and carrier concentration is 5.0 * 10
19Cm
-3-1.0 * 10
21Cm
-3Described Nano thin film thickness is 3.0 μ m-8.0 μ m, the affixed pressure-bearing platform of described pressure transfer column one end, another proper being pressed on the positive pole of nano silicon heterojunction pressure-sensitive diode, this pressure transfer column conducts electricity and forms ohm with this electrode and is connected, described skin peace table one utmost point is connected on the pressure transfer column, its another utmost point is connected with the negative pole of constant pressure source, described constant pressure source positive pole is connected by the negative pole of conductive base with the nano silicon heterojunction pressure-sensitive diode, make the nano-silicon pressure-sensitive diode be in reverse-bias state, form the loop.
2. nano silicon heterojunction pressure sensor according to claim 1, it is characterized in that: the negative pole of described nano silicon heterojunction pressure-sensitive diode compresses and is provided with a conductive base, and this conductive base forms ohm by lead, constant pressure source, Pi Anbiao, pressure transfer column with the positive pole of this diode and is connected, the upper end of described pressure transfer column and pressure-bearing platform are fixed, and described pressure-bearing platform can on-load pressure.
3. nano silicon heterojunction pressure sensor according to claim 2, it is characterized in that: described conductive base ground connection connects, the positive pole of described Pi Anbiao connects the negative pole of constant pressure source, and this constant pressure source plus earth makes the nano silicon heterojunction pressure-sensitive diode be in reverse-bias state.
4. nano silicon heterojunction pressure sensor according to claim 3 is characterized in that: the described pressure transfer column outside is connected with adaptive with it direction retainer.
5. nano silicon heterojunction pressure sensor according to claim 4 is characterized in that: the described electrode that is connected with pressure transfer column ohm is the Al electrode that ohm is connected in monocrystalline silicon substrate, and described pressure transfer column is the aluminium post; The electrode that described ohm is connected in Nano thin film is the In electrode, and the described pedestal that is connected with In electrode ohm is the tungsten pedestal.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2484645Y (en) * | 2000-09-27 | 2002-04-03 | 上海维安新材料研究中心有限公司 | Nano silicon heterodiode |
| US6369435B1 (en) * | 1998-11-17 | 2002-04-09 | Micronas Gmbh | Semiconductor component |
| CN1466780A (en) * | 2000-09-29 | 2004-01-07 | 株式会社山武 | Pressure sensor and method for manufcturing pressure sensor |
-
2008
- 2008-03-21 CN CN2008100200426A patent/CN101252151B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6369435B1 (en) * | 1998-11-17 | 2002-04-09 | Micronas Gmbh | Semiconductor component |
| CN2484645Y (en) * | 2000-09-27 | 2002-04-03 | 上海维安新材料研究中心有限公司 | Nano silicon heterodiode |
| CN1466780A (en) * | 2000-09-29 | 2004-01-07 | 株式会社山武 | Pressure sensor and method for manufcturing pressure sensor |
Non-Patent Citations (7)
| Title |
|---|
| CN 1466780 A,全文. |
| 徐刚毅等.纳米硅/单晶硅异质结二极管的电学特性.功能材料与器件学报7 1.2001,7(1),45-50. |
| 徐刚毅等.纳米硅/单晶硅异质结二极管的电学特性.功能材料与器件学报7 1.2001,7(1),45-50. * |
| 韦文生等.(p)nc-Si:H/(n)c-Si异质结变容二极管.半导体学报26 4.2005,26(4),745-750. |
| 韦文生等.(p)nc-Si:H/(n)c-Si异质结变容二极管.半导体学报26 4.2005,26(4),745-750. * |
| 韦文生等.Nc-Si:H薄膜器件的研究.材料导报18 1.2004,18(1),76-79. |
| 韦文生等.Nc-Si:H薄膜器件的研究.材料导报18 1.2004,18(1),76-79. * |
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