CN101114678A - Nano silicon heterojunction backward diode and method for making same - Google Patents
Nano silicon heterojunction backward diode and method for making same Download PDFInfo
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- CN101114678A CN101114678A CNA2007100242725A CN200710024272A CN101114678A CN 101114678 A CN101114678 A CN 101114678A CN A2007100242725 A CNA2007100242725 A CN A2007100242725A CN 200710024272 A CN200710024272 A CN 200710024272A CN 101114678 A CN101114678 A CN 101114678A
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Abstract
The invention discloses a hetero-junction nano-sized silicon backward diode together with the related processing method, comprising a single crystal silicon substrate, an electrode and a nano-sized silicon film deposited of the single crystal silicon substrate, the invention is characterized in that the nano-sized silicon film and the single crystal silicon substrate form a single crystal silicon nano-sized silicon structure or a hetero-junction single crystal silicon structure, and the carrier concentration of the single crystal silicon substrate is no less than 2.4 multiplied by 1020 cm-3 while the carrier concentration of the nano-sized silicon film is 2.0 multiplied by 1019 cm-3-1.0 multiplied by 1020 cm-3, and the invention realizes the production of backward diode by using nano-sized silicon film, and increases backward breakdown voltage for about 2V compared with the previous backward diode made by other materials to improve interval of operation voltage of the backward diode.
Description
Technical field
The present invention relates to electronic device, a kind of specifically backward diode, the nano silicon heterojunction backward diode of more specifically saying so.
Background technology
Since the eighties in last century, both at home and abroad the result of study of each research institution shows: Nano thin film (nc-Si:H) is by hydrogenated amorphous shape silicon (a-Si:H) tissue and is embedded in nano-silicon crystal grain formation in the hydrogenated amorphous shape silicon tissue, wherein nano-silicon crystal grain has the quantum dot feature, its transmission mechanism has been different from semi-conducting material, but a kind of heterojunction quantum dot tunnelling mechanism, this has than amorphous silicon (a-Si) it to exceed several thousand times conductivity, and the relation of conductivity and temperature a little less than.Because the architectural feature of Nano thin film (nc-Si:H) makes it have a series of rerum naturas that are different from monocrystalline silicon (c-Si), amorphous silicon (a-Si:H) and microcrystalline silicon film (mc-Si:H), its application prospect aspect electronic device also causes people's extensive interest day by day.
Backward diode, negation greater than " just " diode to electric current, has superior frequency response and to characteristic such as temperature, irradiation effect be not obvious to electric current under the promptly little bias voltage.Backward diode is applied to overvoltage protection, rectification, microwave detection, the mixing of small-signal low-power circuit." semiconductor device physics " (Electronic Industry Press published in 1987) chapter 9 the 3rd joint as Shi Minzhu is introduced, but its reverse breakdown voltage of this backward diode is on the low side, has only under the normal temperature-4.7V.
Summary of the invention
First purpose of the present invention is that the applying nano silicon thin film is made a kind of nano silicon heterojunction backward diode.
Second purpose of the present invention provides a kind of manufacture method of nano silicon heterojunction backward diode.
For achieving the above object, technical scheme of the present invention is a kind of nano silicon heterojunction backward diode, it is characterized in that: comprise monocrystalline silicon substrate, electrode, be deposited on the Nano thin film on the monocrystalline silicon substrate, described Nano thin film and monocrystalline silicon substrate constitute nanometer silicon/monocrystalline silicon heterojunction structure, and the carrier concentration of described monocrystalline silicon substrate is not less than 2.4 * 10
20Cm
-3, the carrier concentration of described Nano thin film is 2.0 * 10
19Cm
-3-1.0 * 10
20Cm
-3
Further setting is that the average resistivity of described monocrystalline silicon substrate is 0.0003 Ω cm-0.0006 Ω cm.
Further being provided with is to be that substrate is P with monocrystalline silicon
+Type mixes, and described Nano thin film is N
+Type, the two constitutes N
+/ P
+The nanometer silicon/monocrystalline silicon heterojunction structure of type.
Further being provided with is described N
+The type Nano thin film is a phosphorus doping.
Further being provided with is that described Nano thin film thickness is 1 μ m.
Further being provided with is that described electrode is the Au/Cr electrode that ohm is connected in monocrystalline silicon substrate, and ohm is connected in the Au/Ge electrode of Nano thin film.
For realizing second purpose of the present invention, technical scheme of the present invention is: a kind of preparation technology of nano silicon heterojunction backward diode is characterized in that may further comprise the steps:
A, the about 100 μ m of selection thickness, average resistivity are that 0.0003 Ω cm-0.0006 Ω cm, carrier concentration are not less than 2.4 * 10
20Cm
-3, single face polishing P
+Type monocrystalline silicon is substrate;
B, under the 1293K temperature, thermal oxidation goes out the thick SiO of 1 μ m to monocrystalline substrate
2Layer is at this SiO
2Etch square hole on the layer;
C, use plasma chemical vapor deposition, to feed phosphine in the silane as hybrid reaction source gas, growth deposits the Nano thin film of mixing phosphorus in the substrate square hole in the PECVD reative cell, and its technological parameter is:
PECVD reative cell ultimate vacuum: 1.0 * 10
-4Pa
Hybrid reaction source gas mixes and compares: PH
3/ SiH
4=8.0vol%-12.0vol%
Select radio frequency source RF frequency: f=13.56MHZ during film growth for use
Film growth RF radio frequency power density: 0.6W/cm
2
Film growth underlayer temperature: Ts=523K
Dc bias: Vb=-150V is born in film growth
Reaction gas pressure during film growth: P=1 torr
D, the outer field Nano thin film of square hole is rejected by photoetching, in square hole, stay about 1 μ m thick mix the phosphorus Nano thin film;
E, the deposited by electron beam evaporation technology is made electrode on substrate and film respectively;
Final formation structure is electrode/(N
+) nc-Si:H/ (P
+) backward diode of c-Si/ electrode.
Further being provided with is that to select golden evanohm and gold-germanium alloy on substrate and film respectively for use be that raw material deposited by electron beam evaporation technology is made electrode, and its technological parameter is:
Eb evaporation chambers ultimate vacuum: 1.0 * 10
-4Pa
Filament direct current: I=10A
Underlayer temperature: Ts=473K
The thickness of electrode film: 0.5 μ m.
The invention has the beneficial effects as follows and utilize Nano thin film to make backward diode that compare over the backward diode that other material makes, its reverse breakdown voltage has improved about 2V, and backward diode operating voltage interval is improved significantly.
The present invention will be further described below in conjunction with specification drawings and specific embodiments.
Figure of description
Fig. 1 product structure schematic diagram of the present invention
The forward I-V curve that Fig. 2 specific embodiment of the invention 1 detects
The reverse I-V curve that Fig. 3 specific embodiment of the invention 1 detects
Fig. 4 product of the present invention I under forward bias
pPairing energy band diagram
Fig. 5 product of the present invention I under forward bias
vPairing energy band diagram
Fig. 6 product of the present invention I under forward bias
hPairing energy band diagram
Fig. 7 product of the present invention pairing energy band diagram under reverse biased
Embodiment
The embodiment 1 of product of the present invention as described in Figure 1, selecting average resistivity for use is the P of 0.0003 Ω cm-0.0006 Ω cm
+Type monocrystalline silicon (c-Si) is substrate 1, the preferred 0.0006 Ω cm of the average resistivity of the substrate of present embodiment, and the carrier concentration of the doping of this monocrystalline silicon substrate is preferably 2.4 * 10
20Cm
-3, the carrier concentration of the doping of monocrystalline silicon substrate of the present invention can also be greater than 2.4 * 10 certainly
20Cm
-3, deposition one layer thickness is the N that mixes phosphorus of 1 μ m on this substrate
+Type Nano thin film (nc-Si:H) 2, the carrier concentration of this Nano thin film (nc-Si:H) is 2.0 * 10
19Cm
-3, described Nano thin film and monocrystalline silicon constitute nanometer silicon/monocrystalline silicon heterojunction structure, are respectively equipped with Au/Cr electrode and Au/Ge electrode 3 on substrate and the Nano thin film.
The embodiment 2 of product of the present invention as described in Figure 1, the carrier concentration of different with execution mode 1 is described Nano thin film (nc-Si:H) is 1.0 * 10
20Cm
-3
The embodiment 3 of product of the present invention as described in Figure 1, the carrier concentration of different with execution mode 1 is described Nano thin film (nc-Si:H) is 6.0 * 10
19Cm
-3
Preparation method's of the present invention execution mode 1: select that about 100 μ m are thick, average resistivity is 0.0006 Ω cm, carrier concentration N for use
ABe 2.4 * 10
20Cm
-3Monolithic polishing p+ type crystalline silicon (100) wafer as substrate material.At first, under the 1293K temperature, the substrate base thermal oxidation method is prepared the thick SiO of about 1 μ m
2Layer.With optical etching technology with SiO
2Layer etches serial 30 μ m * 30 μ m square holes, use again plasma activated chemical vapour deposition (PECVD) technology deposit one deck in these windows fresh mix phosphorus nc-Si:H film, adopt optical etching technology to remove the outer nc-Si:H film of square window then, only keep the about 1 μ m in window bottom thick mix phosphorus Nano thin film (nc-Si:H).This Nano thin film (nc-Si:H) of mixing phosphorus is with in the high vacuum PECVD reative cell, prepares by following technological parameter:
PECVD reative cell ultimate vacuum: 1.0 * 10
-4Pa
Hybrid reaction source gas mixes and compares: PH
3/ SiH
4=10vol%
Select radio frequency source RF frequency: f=13.56MHZ during film growth for use
Film growth RF radio frequency power density: 0.6W/cm
2
Film growth underlayer temperature: Ts=523K
Dc bias: Vb=-150V is born in film growth
Reaction gas pressure during film growth: P=1 torr (mmHg)
At last, the deposited by electron beam evaporation method is steamed Au/Cr and Au/Ge alloy respectively as two Ohm contact electrodes on crystalline silicon substrate and Nano thin film (nc-Si:H), and its technological parameter is:
Eb evaporation chambers ultimate vacuum: 1.0 * 10
-4Pa
Filament direct current: I=10A
Underlayer temperature: Ts=473K
The thickness of electrode film: 0.5 μ m
Preparation method's of the present invention execution mode 2, different with preparation method's execution mode 1 is: during the preparation Nano thin film, ratio: the PH that mixes of the hybrid reaction source gas in the PECVD reative cell
3/ SiH
4=8vol%.
Preparation method's of the present invention execution mode 3, different with preparation method's execution mode 1 is: during the preparation Nano thin film, ratio: the PH that mixes of the hybrid reaction source gas in the PECVD reative cell
3/ SiH
4=12vol%.
Nano thin film backward diode disclosed by the invention, at 78K to differential negative resistance and the reverse Zener breakdown phenomenon in the I-V curve observed between the room temperature in the forward I-V curve.The series Experiments of Electricity confirm that this mechanism is the heterojunction semiconductor backward diode.
Forward I-V curve as shown in Figure 2, little adds under the forward voltage, and electric current belongs to the electric current I that the interband tunnelling produces
p, its tunnelling mechanism as shown in Figure 4; Along with applied forward voltage increases to valley point voltage, electric current is called excess current I
v, can be considered charge carrier by conduction band by the multistage tunnelling of the some localization crack attitude in the forbidden band to valence band, its mechanism is as shown in Figure 5; When positive applying bias is higher than valley point voltage V
v, measuring current I value increases deviation index rule simultaneously, and this is called as the hump electric current I
h, be attributable to due to the jump conduction between the interior magnetic tape trailer localized state of Nano thin film; Along with the further increase of applying bias, electric current is pressed index law with applied voltage to be increased, and is dissufion current or thermocurrent I
Th, its mechanism as shown in Figure 6.Total positve term electric current can be expressed as:
I＝I
t+I
x+I
h+I
th
Under reverse biased, by improving reverse bias from 0V to-6.5V, reverse current I
RDull increasing, as shown in Figure 3.In addition, under the identical little voltage of absolute value, I
RValue be far longer than the forward tunnelling current, and I
RHas little positive temperature coefficient.Based on these observation, can think (n
+) nc-Si:H/ (p
+) due to field emission one Zener of c-Si heterojunction under the applied voltage effect punctured, its mechanism as shown in Figure 7.At a certain temperature, utilize following expression formula to come the quantitative relation of simulated inverse I-V characteristic:
I
R＝B
1exp(|V
R|/B
2)
B wherein
1And B
2Be respectively bias voltage V
RSlowly varying function.In Fig. 3, under identical voltage, reverse current I
RRising with temperature increases, and this is because tunnelling probability has due to the positive temperature coefficient.Be higher than along with reverse voltage further increases to-during 6.5V, reverse current sharply increases.6.5V numerical value and 4E
g/ q value is suitable, wherein E
g=1.72eV is the value of amorphous silicon energy gap, and q is an elementary charge.In the nc-Si:H film, nano-silicon crystal grain is surrounded by amorphous silane (a-Si:H) material.Therefore, the energy gap of nc-Si:H material is considered to suitable with the energy gap of a-Si:H.When this diode operation, the carrier concentration on the nc-Si:H film is lower than the carrier concentration on the monocrystalline silicon substrate, and main drop of potential is carried by the nc-Si:H thin layer.Therefore, when reverse voltage surpass-during 6.5V, reverse current I
RRapid increase, be that the nc-Si:H layer of diode is caused by Zener breakdown.Wherein-6.5V can think the puncture voltage of this backward diode.
Claims (8)
1. nano silicon heterojunction backward diode, it is characterized in that: comprise monocrystalline silicon substrate, electrode, be deposited on the Nano thin film on the monocrystalline silicon substrate, described Nano thin film and monocrystalline silicon substrate constitute nanometer silicon/monocrystalline silicon heterojunction structure, and the carrier concentration of described monocrystalline silicon substrate is not less than 2.4 * 10
20Cm
-3, the carrier concentration of described Nano thin film is 2.0 * 10
19Cm
-3-1.0 * 10
20Cm
-3
2. nano silicon heterojunction backward diode according to claim 1 is characterized in that: the average resistivity of described monocrystalline silicon substrate is 0.0003 Ω cm-0.0006 Ω cm.
3. nano silicon heterojunction backward diode according to claim 1 and 2 is characterized in that: described monocrystalline silicon substrate is P
+Type mixes, and described Nano thin film is N
+Type mixes, and the two constitutes N
+/ P
+The nanometer silicon/monocrystalline silicon heterojunction structure of type.
4. nano silicon heterojunction backward diode according to claim 3 is characterized in that: described N
+The type Nano thin film is a phosphorus doping.
5. nano silicon heterojunction backward diode according to claim 4 is characterized in that: described Nano thin film thickness is 1 μ m.
6. nano silicon heterojunction backward diode according to claim 5 is characterized in that: described electrode is the Au/Cr electrode that ohm is connected in monocrystalline silicon substrate, and ohm is connected in the Au/Ge electrode of Nano thin film.
7. the preparation method of a nano silicon heterojunction backward diode is characterized in that may further comprise the steps:
A, the about 100 μ m of selection thickness, average resistivity are that 0.0003 Ω cm-0.0006 Ω cm, carrier concentration are not less than 2.4 * 10
20Cm
-3, single face polishing P
+Type monocrystalline silicon is substrate;
B, under the 1293K temperature, thermal oxidation goes out the thick SiO of 1 μ m to monocrystalline substrate
2Layer is at this SiO
2Etch square hole on the layer;
C, use plasma chemical vapor deposition, to feed phosphine in the silane as hybrid reaction source gas, growth deposits the Nano thin film of mixing phosphorus in the substrate square hole in the PECVD reative cell, and its technological parameter is:
PECVD reative cell ultimate vacuum: 1.0 * 10
-4Pa
Hybrid reaction source gas mixes and compares: PH
3/ SiH
4=8.0vol%-12.0vol%
Select radio frequency source RF frequency: f=13.56MHZ during film growth for use
Film growth RF radio frequency power density: 0.6W/cm
2
Film growth underlayer temperature: Ts=523K
Dc bias: Vb=-150V is born in film growth
Reaction gas pressure during film growth: P=1 torr
D, the outer field Nano thin film of square hole is rejected by photoetching, in square hole, stay about 1 μ m thick mix the phosphorus Nano thin film;
E, the deposited by electron beam evaporation technology is made electrode on substrate and film respectively; Final formation structure is electrode/(N
+) nc-Si:H/ (P
+) backward diode of c-Si/ electrode.
8. the preparation method of nano silicon heterojunction backward diode according to claim 7, it is characterized in that: selecting golden evanohm and gold-germanium alloy on substrate and film respectively for use is that raw material deposited by electron beam evaporation technology is made electrode, and its technological parameter is:
Eb evaporation chambers ultimate vacuum: 1.0 * 10
-4Pa
Filament direct current: I=10A
Underlayer temperature: Ts=473K
The thickness of electrode film: 0.5 μ m.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100242725A CN101114678A (en) | 2007-07-26 | 2007-07-26 | Nano silicon heterojunction backward diode and method for making same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100242725A CN101114678A (en) | 2007-07-26 | 2007-07-26 | Nano silicon heterojunction backward diode and method for making same |
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|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104297657A (en) * | 2014-10-22 | 2015-01-21 | 温州大学 | Digitized high-power microwave diode reversed dynamic waveform and loss power testing system |
| CN104862651A (en) * | 2015-06-09 | 2015-08-26 | 电子科技大学 | Device and method for preparing hydrogenated silicon film |
| CN108630665A (en) * | 2017-03-20 | 2018-10-09 | 英飞凌科技奥地利有限公司 | Power semiconductor |
| CN109473541A (en) * | 2018-12-25 | 2019-03-15 | 黑龙江大学 | A kind of hetero-junction silicon magnetic sensitive transistor and process for making |
-
2007
- 2007-07-26 CN CNA2007100242725A patent/CN101114678A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104297657A (en) * | 2014-10-22 | 2015-01-21 | 温州大学 | Digitized high-power microwave diode reversed dynamic waveform and loss power testing system |
| CN104297657B (en) * | 2014-10-22 | 2016-04-27 | 温州大学 | Digitizing HIGH-POWERED MICROWAVES diode reverse dynamic waveform and loss power test macro |
| CN104862651A (en) * | 2015-06-09 | 2015-08-26 | 电子科技大学 | Device and method for preparing hydrogenated silicon film |
| CN108630665A (en) * | 2017-03-20 | 2018-10-09 | 英飞凌科技奥地利有限公司 | Power semiconductor |
| CN109473541A (en) * | 2018-12-25 | 2019-03-15 | 黑龙江大学 | A kind of hetero-junction silicon magnetic sensitive transistor and process for making |
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