CN101241970A - Organic film field effect transistor and its encapsulation method - Google Patents

Organic film field effect transistor and its encapsulation method Download PDF

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CN101241970A
CN101241970A CNA2008100066253A CN200810006625A CN101241970A CN 101241970 A CN101241970 A CN 101241970A CN A2008100066253 A CNA2008100066253 A CN A2008100066253A CN 200810006625 A CN200810006625 A CN 200810006625A CN 101241970 A CN101241970 A CN 101241970A
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organic film
membrane layer
organic
polymer material
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董桂芳
胡远川
王立铎
邱勇
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Tsinghua University
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Tsinghua University
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Abstract

The present invention relates to a method for packaging an organic film field effect transistor. The method is depositing a package layer on one side or two sides of the device and the method is characterized in that the package layer is composed of one layer of polymer material thick film or is composed by alternately overlapping the polymer material film layer and the ceramic material film layer with a certain period number. The package layer prepared by the packaging method can effectively isolate the water and the oxygen thereby greatly increasing the property of the organic film field effect transistor, greatly increasing the stability of the device and prolonging the service lifetime of the device.

Description

Organic film FET and method for packing thereof
The application is an application number: 03121062.7, and denomination of invention: organic film FET and method for packing thereof, the applying date: the dividing an application of on March 21st, 2003.
Technical field
The present invention relates to a kind of organic film FET and method for packing thereof.
Background technology
Semi-conducting material is the class material of conductive capability between conductor and insulator, is that the inorganic semiconductor material of representative has been widely used in fields such as electronic devices and components, high density information memory device, photoelectric device with silicon, germanium, GaAs, gallium nitride etc.Along with people to material world understanding progressively deeply, recent development a collection of organic functional material with similar characteristic of semiconductor, and attempting being applied to the applied field of conventional semiconductor material.The appearance of organic semiconductor (organic semiconductor) material, the visual field of greatly having enriched people has excited extensive studies interest, has become one of current research focus.
1986, A.Tsumura et al. (A.Tsumura, H.Koezuka, and T.ando, Appl.Phys.Lett., 49 (18), 1210,1986) prepare organic film FET (Organic Thi n-Film Field-Effect Transistors is hereinafter to be referred as OTFFETs) with polythiophene as semi-conducting material first, henceforth the organic crystal Manifold technology is constantly developed.1997, Y.Y.Linet al. (Y.Y.Lin, D.J.Gundlach, S.F.Nelson et al., IEEE ElectronDevice Letters, 18 (12), 606,1997) prepared hole carrier mobility and has been higher than 1.7cm 2The OTFFETs of/Vs, such performance can compare favourably with the unformed silicon transistor of present use fully, and is better than unformed silicon transistor far away on manufacturing cost, preparation process condition, from then on, has opened the road of OTFFETs industrial applications.
Studies show that when organic semiconductor device (including OLED and OTFFETs) when being placed in the air, their performance is easy to decay.(comprise as accompanying drawing 1a source and leak the structure of leaking in the structure on top and accompanying drawing 1b source the end of at) that this performance degradation situation is just very obvious under the situation that organic semiconductor layer is in air directly contacts of OTFFETs, this will influence the application of OTFFETs greatly.Cause that the reason of OTFFETs performance degradation may comprise the chemistry decay, the defective that causes by air and the water oxygen of organic semiconductor layer surface adsorption etc., wherein steam and the oxygen in the organic semiconductor layer surface adsorption is a major reason that causes the OTFFETs performance degradation.We discover and adopt the method for encapsulation can completely cut off steam and oxygen effectively to device, for prolonging device lifetime sizable benefit are arranged also.U.S. invention US20020155729A1 (open day: on October 24th, 2002) mention the performance that can improve organic transistor by the method for encapsulation, this invention adopts inorganic silicon nitride and silicon dioxide as encapsulating material, by plasma enhanced chemical vapor deposition (plasma enhanced chemical vapordeposition, hereinafter to be referred as PECVD) method prepared encapsulated layer, all obtained significantly improving through later device carrier mobility of encapsulation and switch current ratio.Yet this invention does not relate to encapsulation for the influence of device lifetime, and there is following shortcoming in this technical scheme:
1. the working temperature of PECVD method is than higher, the highlyest surpasses 150 ℃, and so high temperature is for the poor organic functional material of thermal stability, can cause film morphology to change even destroys the organic material structure;
2. under plasma condition, some gas in the gaseous environment may take place to answer with some organic functional material, thereby changes the structure of organic material, causes device performance to descend.
Therefore, we need seek one and can implement under low working temperature, and can not form the method for packing that destroys to the surface of organic material.
Summary of the invention
The method for packing that the purpose of this invention is to provide a kind of organic film FET.
For achieving the above object, the invention provides a kind of organic film FET, comprise organic semiconductor layer that is used as the field effect channel layer and the encapsulated layer that is used to seal described at least organic semiconductor layer, it is characterized in that: described encapsulated layer is made up of one layer of polymeric material thick film layers, and the thickness of described thick film layers is 100～1000 microns.
The invention provides another kind of organic film FET, it is characterized in that, comprise organic semiconductor layer that is used as the field effect channel layer and the encapsulated layer that is used to seal described at least organic semiconductor layer, described encapsulated layer comprises: polymer material membrane layer, its thicknesses of layers are 50～1000 nanometers; With the ceramic membrane layer that is formed on the described polymer material membrane layer, described polymer material membrane layer and described ceramic membrane layer are counted n with some cycles and are replaced overlapping composition, and n is 1～10 integer.
The invention provides a kind of method for packing, wherein the preparation method who forms encapsulated layer by one layer of polymeric material thick film layers is: adopt in the front of organic film FET (preparation has the one side of organic film FET on the substrate) and scrape the unpolymerized polymer monomer layer that embrane method or cladding process prepare one deck liquid state, become smooth solid film through the ultraviolet irradiation in-situ polymerization.
The invention provides another method for packing, wherein count n with some cycles and replace the overlapping preparation method who forms encapsulated layer and may further comprise the steps by polymer material membrane layer and ceramic membrane layer:
4. at the unpolymerized polymer monomer layer of the front of organic film FET evaporation one deck liquid state, become smooth solid film through the ultraviolet irradiation in-situ polymerization;
5. deposit one deck ceramic membrane layer on above-mentioned polymer material layer;
6. repeat above-mentioned steps 1.～2., on above-mentioned ceramic material layer, prepare the polymer material membrane layer and the ceramic membrane layer in (n-1) cycle again.
Packed organic film FET can comprise that the source leaks in top and source leakage two kinds of structures the end of in the technique scheme, for the transistor of different structure, and their method for packing unanimity.
The substrate of packed organic film FET is glass or plastics in the technique scheme, and plastic substrate can be made up of a kind of material in polyesters or the polyimides compounds, as polyethylene terephthalate (hereinafter to be referred as PET) etc.
The method for packing of organic film FET provided by the invention has the following advantages:
Encapsulated layer by this method for packing preparation can effectively intercept water oxygen, thereby has improved the performance of organic film FET greatly, has also improved the stability of device greatly;
No matter encapsulated layer adopts which kind of structure in the technique scheme, all be at first to prepare the one layer of polymeric material layer, this material can adopt at normal temperatures simply to be scraped embrane method, cladding process or vacuum deposition method and covers the device front, can simplify the preparation technology of encapsulated layer, and, avoided chemical reaction and high temperature destruction to organic semiconductor layer owing to adopt the ultraviolet curing film forming;
If encapsulated layer adopts organic-inorganic alternating multilayered structure in the technique scheme, the inorganic ceramic material layer is to be deposited on above the polymer material layer, has avoided like this destroying the organic semiconductor layer structure at the direct deposit inorganic material layer of organic functions laminar surface.
Be illustrated by embodiment, embodiment below in conjunction with accompanying drawing, it is clearer that the present invention can become.
Description of drawings
Fig. 1 is the structural representation of the organic film FET that encapsulates that proposes of the present invention, wherein 10 is organic film FETs, constitute jointly by 11,12,13,14,15,16, the 11st, substrate, the 12nd, grid, the 13rd, insulating barrier, the 14th, organic semiconductor layer, 15 and 16 is respectively source electrode and drain electrode, the 20th, and encapsulated layer; Fig. 1 a is that source transistor leaks the structure on the top; Fig. 1 b is that source transistor leaks the structure the end of at.
Fig. 2 is the structural representation of the encapsulated layer of the organic film FET that proposes of the present invention, and wherein 10 is organic film FETs, the 20th, and encapsulated layer; The encapsulated layer 20 of Fig. 2 a is made up of one layer of polymeric material thick film layers, and 21 with 20; The encapsulated layer 20 of Fig. 2 b is counted n by polymer material membrane layer 211 and ceramic membrane layer 212 with some cycles and is replaced overlapping the composition.
Fig. 3 is placed on the airborne not characteristic curve and the time dependent situation of switching current curve of the organic film FET of encapsulation in the embodiment of the invention 1; Fig. 3 a is the time dependent situation of characteristic curve; Fig. 3 b is the time dependent situation of switching current curve.
Fig. 4 is characteristic curve and the time dependent situation of switching current curve that is placed on the organic film FET of airborne encapsulation in the embodiment of the invention 1; Fig. 4 a is the time dependent situation of characteristic curve; Fig. 4 b is the time dependent situation of switching current curve.
Elaborate content of the present invention below in conjunction with the drawings and specific embodiments, should be appreciated that the present invention is not limited to following preferred implementation, preferred implementation is as just illustrative embodiment of the present invention.
Embodiment
Fig. 2 a is the structural representation that the encapsulated layer 20 of the organic film FET that proposes of the present invention is made up of one layer of polymeric material thick film layers 21, wherein 10 is organic film FET, constitute (see figure 1) jointly by 11,12,13,14,15,16, the 11st, substrate, the 12nd, grid, the 13rd, insulating barrier, the 14th, organic semiconductor layer, 15 and 16 is respectively source electrode and drain electrode.The encapsulated layer of 20 organic film FETs that propose for the present invention, this encapsulated layer is made up of one layer of polymeric material thick film layers 21, can adopt polymethyl methacrylate, polyethyl methacrylate, UV to solidify a kind of polymer in the glue, thickness is 100～1000 μ m.
In conjunction with Fig. 2 a; the preparation method who forms encapsulated layer 20 by one layer of polymeric material thick film layers 21 that the present invention proposes is elaborated as follows: organic film FET is placed dry glove box; protect with nitrogen in the glove box; adopt in the front of above-mentioned device and to scrape the unpolymerized polymer monomer layer that embrane method or cladding process prepare one deck liquid state; make its curing with ultraviolet irradiation; irradiation time is according to the employing material; the preparation difference of thickness and difference; be generally 1～30min; liquid monomer layer becomes smooth solid film through the ultraviolet irradiation in-situ polymerization, and thickness is 100～1000 μ m.
Fig. 2 b is that the encapsulated layer 20 of the organic film FET that proposes of the present invention is counted n by polymer material membrane layer 211 and ceramic membrane layer 212 with some cycles and replaced the overlapping structural representation of forming, wherein the thickness of polymer material membrane layer 211 is 50～1000nm, can adopt polymethyl methacrylate, polyethyl methacrylate, UV to solidify a kind of polymer in the glue; Ceramic membrane layer 212 has very high water and oxygen barrier property, thickness is 10～1000nm, can adopt a kind of material in nitride, oxide or the nitrogen oxide, nitride is generally silicon nitride, aluminium nitride, titanium nitride etc., oxide is generally silica, aluminium oxide, titanium oxide etc., and nitrogen oxide is generally silicon oxynitride, aluminum oxynitride, titanium oxynitrides etc.
In conjunction with Fig. 2 b, the present invention proposes counts n by polymer material membrane layer 211 and ceramic membrane layer 212 with some cycles and replaces the overlapping preparation method who forms encapsulated layer 20 and be elaborated as follows:
1. organic film FET is placed vacuum coating equipment, suction to 10 -4～10 -3Pa, unpolymerized polymer monomer layer in the front of above-mentioned device evaporation one deck liquid state, make its curing with ultraviolet irradiation, irradiation time is according to the difference of employing material, evaporation thickness and difference, be generally 1～30min, liquid monomer layer becomes smooth solid film through the ultraviolet irradiation in-situ polymerization, and thickness is 50～1000nm;
2. utilizing the method for magnetically controlled DC sputtering or rf magnetron sputtering to prepare the ceramic membrane layer on above-mentioned polymer material layer, is 10 at background pressure -4～10 -3Feed nitrogen or oxygen under the Pa condition, the gas flow ratio that the control reaction is got up, the air pressure of regulating vacuum chamber is 0.1～10Pa, adopts targets such as titanium, aluminium, silicon, silicon nitride or silicon dioxide at 0.5～50W/cm 2Direct current power density under sputter, control above-mentioned device temperature below 40 ℃ by cooling system, sputtering time is 10s～60min, the thickness of sputter is 10～1000nm;
3. repeat above-mentioned steps 1.～2., on above-mentioned ceramic material layer, prepare the polymer material membrane layer and the ceramic membrane layer in (n-1) cycle again.
Embodiment 1:
Present embodiment OTFFETs structure is as follows:
Glass (substrate)/ITO (grid)/PMMA (insulating barrier)/pentacene (semiconductor layer)/Au (source, drain electrode) (1)
Wherein, PMMA is the abbreviation of polymethyl methacrylate, and channel length is 100 μ m, and channel width is 5mm, and channel width-over-length ratio is 50.
A device shown in the above-mentioned formula (1) is placed dry glove box, protect with nitrogen in the glove box.(UVSTRCTL 352 to adopt the unpolymerized UV that scrapes embrane method covering one deck liquid state to solidify glue in the front of above-mentioned device, Le Tai company), make its polymerization with ultraviolet irradiation 5min, UV solidifies glue and becomes smooth solid film through the ultraviolet irradiation in-situ polymerization, thickness is 100 μ m, and encapsulation finishes.The characteristic curve and the time dependent situation of switching current curve that are placed on the airborne OTFFETs that does not encapsulate and encapsulate are seen accompanying drawing 3a, 3b, 4a, 4b respectively, and data relatively see the following form 1.
Table 1
Standing time/h in the air Not encapsulation After the encapsulation
Carrier mobility/cm 2/V·s Switch current ratio Carrier mobility/cm 2/V·s Switch current ratio
0 0.03 1×10 4 0.025 2×10 4
100 0.027 5×10 3 0.026 2×10 4
300 0.023 2×10 3 0.025 1.5×10 4
500 0.021 1×10 3 0.024 1.5×10 4
As can be seen from Table 1, packaged device carrier mobility after the 500h has not descended 30%, the switch current ratio order of magnitude that descended.And the stability of encapsulated device improves greatly, and transistorized performance change is little after 500h.
Embodiment 2:
Another device shown in the above-mentioned formula (1) is placed dry glove box, protect with nitrogen in the glove box.The unpolymerized UV that adopts cladding process to cover one deck liquid state in the front of above-mentioned device solidifies glue (UV STRCTL 352, Le Tai company), make its polymerization with ultraviolet irradiation 30min, UV solidifies glue and becomes smooth solid film through the ultraviolet irradiation in-situ polymerization, thickness is 1000 μ m, and encapsulation finishes.The data of the OTFFETs that does not encapsulate and encapsulate relatively see the following form 2.
Table 2
Standing time/h in the air Not encapsulation After the encapsulation
Carrier mobility/cm 2/V·s Switch current ratio Carrier mobility/cm 2/V·s Switch current ratio
0 0.05 2×10 5 0.06 5×10 5
100 0.045 1×10 5 0.06 5×10 5
300 0.042 5×10 4 0.058 5×10 5
500 0.04 4×10 4 0.06 4×10 5
As can be seen from Table 2, packaged device carrier mobility after the 500h descends 20%, and switch current ratio drops to original 1/5th.And transistorized stability improves greatly after the encapsulation, and carrier mobility is constant substantially behind 500h, and switch current ratio has only descended 20%.
Embodiment 3:
Another device shown in the above-mentioned formula (1) is placed vacuum coating equipment, be evacuated to 5 * 10 -4Pa.UV in the front of above-mentioned device evaporation one deck liquid state solidifies glue (UV STRCTL 352, Le Tai company), makes its curing with ultraviolet irradiation, and irradiation time is 5min, and UV solidifies glue and becomes smooth solid film through the ultraviolet irradiation in-situ polymerization, and thickness is 300nm.At background pressure is 10 -4～10 -3Feed nitrogen under the Pa condition, the air pressure of regulating vacuum chamber is 0.40Pa, adopts the high purity titanium target solidifying sputter on the glue to UV under the direct current power of 96W, and substrate temperature is controlled at below 40 ℃, and growth time is 10min, and the titanium nitride membrane thickness is 50nm.Repeat above-mentioned steps and prepare (UV solidifies glue/titanium nitride) the THIN COMPOSITE rete in 1 cycle again, obtain double-periodic encapsulated layer.The data of the OTFFETs that does not encapsulate and encapsulate relatively see the following form 3.
Table 3
Standing time/h in the air Not encapsulation After the encapsulation
Carrier mobility/cm 2/V·s Switch current ratio Carrier mobility/cm 2/V·s Switch current ratio
0 0.04 2×10 5 0.04 3×10 5
100 0.035 1×10 5 0.039 2×10 5
300 0.032 5×10 4 0.038 2×10 5
500 0.03 4×10 4 0.037 2×10 5
As can be seen from Table 3, packaged device carrier mobility after the 500h descends 33%, and switch current ratio drops to original 1/5th.And transistorized stability improves greatly after the encapsulation, and carrier mobility has only reduced less than 10% behind 500h, and switch current ratio has only descended 33%.
Embodiment 4:
For adopting polymer material layer and ceramic material layer alternating structure packaged device, different periodicity n has bigger influence for the later transistorized performance of encapsulation, and we have investigated the influence of different encapsulation cycle n for device stability.
Present embodiment OTFFETs structure cotype (1)
Encapsulation layer structure is: OTFFETs/ (UV solidifies glue＜100nm 〉/titanium nitride＜80nm 〉) n
We have measured transistorized carrier mobility and switch current ratio behind firm encapsulation, encapsulation back 100h, 300h and the 500h, and data relatively see the following form 4.
Table 4
Encapsulation periodicity n Encapsulation just Behind the 100h Behind the 300h Behind the 500h
Carrier mobility/cm 2/V·s Switch current ratio Carrier mobility/cm 2/V·s Switch current ratio Carrier mobility/cm 2/V·s Switch current ratio Carrier mobility/cm 2/V·s Switch current ratio
0 0.04 2× 10 5 0.035 1× 10 5 0.032 5× 10 4 0.03 4× 10 4
1 0.04 3× 10 5 0.039 2× 10 5 0.038 2× 10 5 0.037 2× 10 5
2 0.042 5× 10 5 0.041 4× 10 5 0.04 4× 10 5 0.04 4× 10 5
3 0.045 3× 10 5 0.044 3× 10 5 0.044 3× 10 5 0.043 2× 10 5
4 0.04 5× 10 5 0.04 5× 10 5 0.04 5× 10 5 0.039 5× 10 5
5 0.06 1× 10 6 0.06 1× 10 6 0.06 1× 10 6 0.059 1× 10 6
6 0.054 8× 10 5 0.054 8× 10 5 0.054 8× 10 5 0.053 8× 10 5
7 0.043 4× 10 5 0.043 4× 10 5 0.043 4× 10 5 0.043 4× 10 5
8 0.05 1× 10 6 0.05 1× 10 6 0.05 1× 10 6 0.05 1× 10 6
9 0.08 2× 10 6 0.08 2× 10 6 0.08 2× 10 6 0.08 2× 10 6
10 0.065 1× 10 6 0.065 1× 10 6 0.065 1× 10 6 0.065 1× 10 6
As can be seen from Table 4, we find, when periodicity increases since 1, increase along with periodicity, the stability of device also improves constantly, and reaches after 4 layers but work as the alternate cycle number, and the performance of device decays in 500h hardly, and because periodicity increases, the process of device package will be complicated greatly.
Embodiment 5:
Another device shown in the above-mentioned formula (1) is placed vacuum coating equipment, be evacuated to 5 * 10 -4Pa.UV in the front of above-mentioned device evaporation one deck liquid state solidifies glue (UV STRCTL 352, Le Tai company), makes its curing with ultraviolet irradiation, and irradiation time is 5min, and UV solidifies glue and becomes smooth solid film through the ultraviolet irradiation in-situ polymerization, and thickness is 150nm.The OTFFET that is coated with UV curing glue is sent into vacuum chamber, be evacuated to 1 * 10 -3Pa, feeding nitrogen control air pressure is 0.4Pa, reaction chamber temperature is controlled at 50 ℃, the silicon nitride of growth 100nm under the radio-frequency power of 100W, growth time is 2min.Repeat above-mentioned steps and prepare (UV solidifies glue/silicon nitride) the THIN COMPOSITE rete in 2 cycles again.The data of the OTFFETs that does not encapsulate and encapsulate relatively see the following form 5.
Table 5
Standing time/h in the air Not encapsulation After the encapsulation
Carrier mobility/cm 2/V·s Switch current ratio Carrier mobility/cm 2/V·s Switch current ratio
0 0.05 2×10 5 0.055 1×10 6
100 0.045 1×10 5 0.054 9×10 5
300 0.042 5×10 4 0.053 9×10 5
500 0.04 4×10 4 0.053 9×10 5
As can be seen from Table 5, packaged device carrier mobility after the 500h descends 20%, and switch current ratio drops to original 1/5th.And transistorized stability improves greatly after the encapsulation, the carrier mobility phenomenon that do not descend substantially behind 500h, and switch current ratio has only descended 10%.
Embodiment 6:
Present embodiment OTFFET structure is as follows:
PET (substrate)/ITO (grid)/PMMA (insulating barrier)/pentacene (semiconductor layer)/Au (source, drain electrode)
(2)
Wherein, PMMA is the abbreviation of polymethyl methacrylate, and channel length is 100 μ m, and channel width is 5mm, and channel width-over-length ratio is 50.
A device shown in the above-mentioned formula (2) is placed dry glove box, protect with nitrogen in the glove box.(UVSTRCTL 352 to adopt the unpolymerized UV that scrapes embrane method covering one deck liquid state to solidify glue in the front of above-mentioned device, Le Tai company), make its polymerization with ultraviolet irradiation 20min, UV solidifies glue and becomes smooth solid film through the ultraviolet irradiation in-situ polymerization, thickness is 500 μ m, and encapsulation finishes.The data of the OTFFETs that does not encapsulate and encapsulate relatively see the following form 6.
Table 6
Standing time/h in the air Not encapsulation After the encapsulation
Carrier mobility/cm 2/V·s Switch current ratio Carrier mobility/cm 2/V·s Switch current ratio
0 0.021 1×10 5 0.03 1×10 5
100 0.015 3×10 4 0.028 8×10 4
300 0.01 1×10 4 0.028 7×10 4
500 0.008 5×10 3 0.026 6×10 4
As can be seen from Table 6, packaged device carrier mobility after the 500h descends 62%, and switch current ratio drops to original 1/20th.And transistorized stability improves greatly after the encapsulation, and carrier mobility has descended 13% behind 500h, and switch current ratio has only descended 40%.
Embodiment 7:
Another device shown in the above-mentioned formula (2) is placed vacuum coating equipment, be evacuated to 5 * 10 -4Pa.UV in the front of above-mentioned device evaporation one deck liquid state solidifies glue (UV STRCTL 352, Le Tai company), makes its curing with ultraviolet irradiation, and irradiation time is 5min, and UV solidifies glue and becomes smooth solid film through the ultraviolet irradiation in-situ polymerization, and thickness is 400nm.At background pressure is 10 -4～10 -3Feed nitrogen under the Pa condition, the air pressure of regulating vacuum chamber is 0.35Pa, adopts the titanium dioxide silicon target solidifying sputter on the glue to UV under the direct current power of 96W, and substrate temperature is controlled at below 40 ℃, and growth time is 10min, and the silica membrane thickness is 50nm.Repeat above-mentioned steps and prepare (UV solidifies glue/silicon dioxide) the THIN COMPOSITE rete in 1 cycle again, obtain double-periodic encapsulated layer.The data of the OTFFETs that does not encapsulate and encapsulate relatively see the following form 7.
Table 7
Standing time/h in the air Not encapsulation After the encapsulation
Carrier mobility/cm 2/V·s Switch current ratio Carrier mobility/cm 2/V·s Switch current ratio
0 0.021 1×10 5 0.035 2×10 5
100 0.015 3×10 4 0.034 2×10 5
300 0.01 1×10 4 0.032 1×10 5
500 0.008 5×10 3 0.031 1×10 5
As can be seen from Table 7, packaged device carrier mobility after the 500h descends 62%, and switch current ratio drops to original 1/20th.And transistorized stability improves greatly after the encapsulation, and carrier mobility has descended 11% behind 500h, and switch current ratio has only descended 50%.
Embodiment 8:
Present embodiment OTFFETs structure is as follows:
Glass (substrate)/ITO (grid)/PMMA (insulating barrier)/Au (source, drain electrode)/pentacene (semiconductor layer) (3)
Wherein, PMMA is the abbreviation of polymethyl methacrylate, and channel length is 100 μ m, and channel width is 5mm, and channel width-over-length ratio is 50.
A device shown in the above-mentioned formula (3) is put in the glove box, protected with nitrogen.The unpolymerized UV that adopts cladding process to cover one deck liquid state in the front of above-mentioned device solidifies glue (UV STRCTL 352, Le Tai company), make its polymerization with ultraviolet irradiation 30min, UV solidifies glue and becomes smooth solid film through the ultraviolet irradiation in-situ polymerization, thickness is 1000 μ m, and encapsulation finishes.The data of the OTFFETs that does not encapsulate and encapsulate relatively see the following form 2.
Table 8
Standing time/h in the air Not encapsulation After the encapsulation
Carrier mobility/cm 2/V·s Switch current ratio Carrier mobility/cm 2/V·s Switch current ratio
0 0.03 1×10 5 0.04 4×10 5
100 0.025 4×10 4 0.039 4×10 5
300 0.022 2×10 4 0.038 4×10 5
500 0.02 1×10 4 0.038 3×10 5
As can be seen from Table 8, packaged device carrier mobility after 500h descends 33%, order of magnitude of switch current ratio decline.And transistorized stability improves greatly after the encapsulation, and carrier mobility is constant substantially behind 500h, and switch current ratio has only descended 25%.
Embodiment 9:
Another device shown in the above-mentioned formula (3) is placed vacuum coating equipment, be evacuated to 5 * 10 -4Pa.UV in the front of above-mentioned device evaporation one deck liquid state solidifies glue (UV STRCTL 352, Le Tai company), makes its curing with ultraviolet irradiation, and irradiation time is 5min, and UV solidifies glue and becomes smooth solid film through the ultraviolet irradiation in-situ polymerization, and thickness is 300nm.At background pressure is 10 -4～10 -3Feed nitrogen under the Pa condition, the air pressure of regulating vacuum chamber is 0.40Pa, adopts the titanium dioxide silicon target solidifying sputter on the glue to UV under the direct current power of 96W, and substrate temperature is controlled at below 40 ℃, and growth time is 10min, and the silica membrane thickness is 50nm.Repeat above-mentioned steps and prepare (UV solidifies glue/silicon dioxide) the THIN COMPOSITE rete in 4 cycles again, obtain double-periodic encapsulated layer.The data of the OTFFETs that does not encapsulate and encapsulate relatively see the following form 3.
Table 9
Standing time/h in the air Not encapsulation After the encapsulation
Carrier mobility/cm 2/V·s Switch current ratio Carrier mobility/cm 2/V·s Switch current ratio
0 0.03 1×10 5 0.035 2×10 5
100 0.025 4×10 4 0.035 2×10 5
300 0.022 2×10 4 0.035 2×10 5
500 0.02 1×10 4 0.035 2×10 5
As can be seen from Table 9, packaged device carrier mobility after 500h descends 33%, order of magnitude of switch current ratio decline.And transistorized stability improves greatly after the encapsulation, and carrier mobility and switch current ratio nearly all do not change behind 500h.
Although describe the present invention in conjunction with the preferred embodiments, the present invention is not limited to the foregoing description and accompanying drawing, and encapsulated layer especially of the present invention can prepare in transistorized front, also can prepare the surface in entire device.Should be appreciated that those skilled in the art can carry out various modifications and improvement under the guiding of the present invention's design, claims have been summarized scope of the present invention.

Claims (9)

1. organic film FET, comprise organic semiconductor layer that is used as the field effect channel layer and the encapsulated layer that is used to seal described at least organic semiconductor layer, it is characterized in that: described encapsulated layer is made up of one layer of polymeric material thick film layers, and the thickness of described thick film layers is 100～1000 microns.
2. organic film FET according to claim 1 is characterized in that, described polymeric material thick film layers adopts polymethyl methacrylate, polyethyl methacrylate, UV to solidify a kind of polymer in the glue.
3. an organic film FET is characterized in that, comprises organic semiconductor layer that is used as the field effect channel layer and the encapsulated layer that is used to seal described at least organic semiconductor layer,
Described encapsulated layer comprises: polymer material membrane layer, its thicknesses of layers are 50～1000 nanometers; With the ceramic membrane layer that is formed on the described polymer material membrane layer, described polymer material membrane layer and described ceramic membrane layer are counted n with some cycles and are replaced overlapping composition, and n is 1～10 integer.
4. organic film FET according to claim 3 is characterized in that, described polymer material membrane layer adopts polymethyl methacrylate, polyethyl methacrylate, UV to solidify a kind of polymer in the glue.
5. organic film FET according to claim 3 is characterized in that, described ceramic membrane layer adopts a kind of material in nitride, oxide or the nitrogen oxide.
6. organic film FET according to claim 5, it is characterized in that described ceramic membrane layer adopts a kind of material in silicon nitride, aluminium nitride, titanium nitride, silica, aluminium oxide, titanium oxide, silicon oxynitride, aluminum oxynitride, the titanium oxynitrides.
7. method for packing that is used for claim 1 or 2 described organic film FETs, it is characterized in that, the preparation method of the described encapsulated layer of being made up of one layer of polymeric material thick film layers is: adopt in the front of organic film FET and scrape the unpolymerized polymer monomer layer that embrane method or cladding process prepare one deck liquid state, become smooth solid film through the ultraviolet irradiation in-situ polymerization.
8. method for packing that is used for any one described organic film FET of claim 3～6, it is characterized in that, describedly count the preparation method that n replaces the overlapping encapsulated layer of forming by polymer material membrane layer and ceramic membrane layer with some cycles and may further comprise the steps:
1. at the unpolymerized polymer monomer layer of the front of organic film FET evaporation one deck liquid state, become smooth solid film through the ultraviolet irradiation in-situ polymerization;
2. deposit one deck ceramic membrane layer on above-mentioned polymer material layer;
3. repeat above-mentioned steps 1.～2., on above-mentioned ceramic material layer, prepare the polymer material membrane layer and the ceramic membrane layer in (n-1) cycle again.
9. method for packing according to claim 8 is characterized in that, described deposit ceramic membrane layer adopts the method for magnetically controlled DC sputtering or rf magnetron sputtering.
CNA2008100066253A 2003-03-21 2003-03-21 Organic film field effect transistor and its encapsulation method Pending CN101241970A (en)

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CN102832344A (en) * 2012-08-30 2012-12-19 上海交通大学 Interconnecting and packaging structure for realizing printed flexible integrated circuit
CN103150965A (en) * 2012-11-16 2013-06-12 友达光电股份有限公司 Flexible display panel
CN105762300A (en) * 2016-05-10 2016-07-13 金皓 Organic Light-Emitting Diode (OLED) device
CN107681051A (en) * 2017-09-15 2018-02-09 哈尔滨理工大学 The vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation
CN107732025A (en) * 2017-09-25 2018-02-23 上海九山电子科技有限公司 A kind of organic electroluminescence display panel and organic light-emitting display device
CN110379924A (en) * 2019-06-11 2019-10-25 北京大学深圳研究生院 A kind of perovskite infrared electro transistor and preparation method thereof
CN110676391A (en) * 2019-09-27 2020-01-10 苏州威格尔纳米科技有限公司 Packaging method of perovskite thin film battery pack

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102832344A (en) * 2012-08-30 2012-12-19 上海交通大学 Interconnecting and packaging structure for realizing printed flexible integrated circuit
CN102832344B (en) * 2012-08-30 2014-11-19 上海交通大学 Interconnecting and packaging structure for realizing printed flexible integrated circuit
CN103150965A (en) * 2012-11-16 2013-06-12 友达光电股份有限公司 Flexible display panel
CN105762300A (en) * 2016-05-10 2016-07-13 金皓 Organic Light-Emitting Diode (OLED) device
CN107681051A (en) * 2017-09-15 2018-02-09 哈尔滨理工大学 The vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation
CN107732025A (en) * 2017-09-25 2018-02-23 上海九山电子科技有限公司 A kind of organic electroluminescence display panel and organic light-emitting display device
CN110379924A (en) * 2019-06-11 2019-10-25 北京大学深圳研究生院 A kind of perovskite infrared electro transistor and preparation method thereof
CN110676391A (en) * 2019-09-27 2020-01-10 苏州威格尔纳米科技有限公司 Packaging method of perovskite thin film battery pack

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