CN107681051A - The vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation - Google Patents
The vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation Download PDFInfo
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- CN107681051A CN107681051A CN201710830340.0A CN201710830340A CN107681051A CN 107681051 A CN107681051 A CN 107681051A CN 201710830340 A CN201710830340 A CN 201710830340A CN 107681051 A CN107681051 A CN 107681051A
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- Prior art keywords
- film
- copc
- film layers
- vertical stratification
- layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/20—Organic diodes
- H10K10/23—Schottky diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/80—Constructional details
- H10K10/88—Passivation; Containers; Encapsulations
Abstract
The vertical stratification Cobalt Phthalocyanine Thin Film diode that the present invention encapsulates for PI.Its composition includes：Glass substrate, one layer of Cu film is deposited on a glass substrate, Cu films form Ohmic contact with ensuing CoPc films, CoPc films form the Schottky contacts with rectifying effect with ensuing Al films, the organic film diode of vertical stratification is formed, is finally packaged Kapton to organic film diode with ultraviolet curing with epoxy resin.Wherein the thickness of Cu film layers is 80nm, and the thickness of described CoPc film layers is 220nm, and the thickness 20nm of described metal Al film layers, described PI thinner packages thicknesses of layers is 28um.What is obtained has effectively obstructed damage of the external environment to device using the device after the encapsulation of polyimides dense film, maintains the stability of device, slows down the performance and the rate of decay in life-span of vertical stratification Cobalt Phthalocyanine Thin Film diode.
Description
Technical field
The present invention relates to a kind of vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation.
Background technology
Inorganic semiconductor device has tended to be ripe and perfect, but with the exploration to organic semiconducting materials and grinds
Study carefully, feature and performance that inorganic semiconductor does not have can be obtained.Traditional transistor needs larger driving voltage, and
Can not meet the needs of for flexible device.
The content of the invention
There is low-work voltage and high workload electric current it is an object of the invention to provide one kind and stablize relatively after encapsulation
PI encapsulation vertical stratification Cobalt Phthalocyanine Thin Film diode.
Above-mentioned purpose is realized by following technical scheme：
A kind of vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation, its composition include：Glass substrate, in described glass substrate
Cu film layers are connected, conducting channel CoPc film layers is connected in described Cu film layers, forms ohm of non-rectification between the two
Contact, Al film layers are connected in described CoPc film layers, form Schottky contacts between the two.Described Al film layer overlyings
One layer of PI packaging film of lid.
The vertical stratification Cobalt Phthalocyanine Thin Film diode of described PI encapsulation, the thickness of described Cu film layers are 80nm, institute
The thickness for the CoPc film layers stated is 220nm, the thickness 20nm of described metal Al film layers, described PI packaging film thickness
Spend for 28um.
A kind of preparation method of the vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation, deposits one layer of Cu on a glass substrate
Film, then be deposited one layer of CoPc film layer, finally make Al film layers, then by device with PI with epoxy resin in ultraviolet
The mode of middle solidification is packaged.
The preparation method of the vertical stratification Cobalt Phthalocyanine Thin Film diode of described PI encapsulation, Cu films are 2.1 in vacuum
×100Under conditions of Pa, argon flow amount are 5.3sccm prepared by magnetron sputtering 50s；Organic C oPc films are to be in vacuum
2.4×10-3Prepared by Pa, temperature carry out 2h10min vacuum evaporations under conditions of being 350 DEG C；Metal Al films are in vacuum
For 2.3 × 100Under conditions of Pa, argon flow amount are 5.3sccm obtained from magnetron sputtering 50s；Then it is 28um's by thickness
Kapton, which is covered in above glass substrate, to be solidified 15min under ultraviolet light with epoxy resin and is packaged.
Beneficial effect：
1. the present invention is that the Ohmic contact of non-rectification is formed with Cu films and CoPc films, and CoPc films and Al film shapes
Into the Schottky contacts with rectifying effect, the vertical stratification Cobalt Phthalocyanine Thin Film diode with short conducting channel is obtained, is used in combination
Polyimides is packaged to prevent influence of the external environment to organic diode.
2. the present invention compared with conventional transistor, there is shorter conducting channel, then response speed faster, less
With regard to larger driving current can be obtained under driving voltage.
3. the stability that the present invention carries out a period of time with unpackaged device contrasts, special according to first day I-V measured
Linearity curve is known that the threshold voltage of unencapsulated organic film diode is 2V, and voltage is in below 2V, the pole of organic film two
The electric current of pipe is essentially 0, and after the applied voltage of device is more than 2V, the electric current of organic film diode quickly increases, I-V curve
Trend is more and more steeper, calculates to obtain organic film electrical conductivityS/cm..The organic film diode encapsulated
Threshold voltage is in 3V or so, and when thin film diode forward bias is less than 3V, it is very small to flow through the electric current of device, can be approximately
Zero；When applied voltage is more than 3V, the increase of electric current straight line, packaging electrical conductivityS/cm。
To having encapsulated and unpackaged device carries out second and tested after seven days, calculate unpackaged devices electrical conductivity S/
cm.Compared with first time test, electrical conductivity declines.The influence of extraneous water, oxygen, dust causes the threshold voltage of device by 2V
Increase.But still the I-V characteristic with diode.The threshold voltage of packaging compares change less with first time test,
Electrical conductivity S/cm is calculated in voltage in the range of 1.8V to 3.8V, and the device electrical conductivity after encapsulation does not decline.
Fortnight to encapsulated and unpackaged device carry out last time test, obtain unpackaged device I-V
Curve starts that the characteristic of resistance is presented.The device is exposed in external environment for a long time, under the influence of water, oxygen, dust, gold
Loose contact reduces Schottky characteristic between category semiconductor so that rectifying junction tends to non-rectification characteristic；Again due to Al chemistry
Nature comparison is active, can be chemically reacted with oxygen, moisture for a long time, generates Al2O3, the Al under normal temperature state2O3No
Conduction, and form dense oxidation film.Because thin-film device Al electrodes only have 20nm thickness, the Al film conductivities after oxidation are just
It can have dropped.Device mobility now calculates to obtain S/cm.Half is have dropped with preceding compare twice.And encapsulated with PI organic thin
Film diode conduction rateS/cm, the electrical conductivity that compared twice with do not decline.
The present invention tests to obtain the flatness of device using D-120Stylus surface smoothness film thickness instruments and device is thin
Film thickness.
Relative to unpackaged device, the device after using the encapsulation of polyimides dense film effectively obstructs the present invention
Damage of the external environment to device, and the performance of device is protected, slow down the performance of organic film device and the decay in life-span
Speed.
Brief description of the drawings：
Accompanying drawing 1 is the structural representation of the present invention.
Accompanying drawing 2 is the I-V curve figure of unencapsulated organic film diode test for the first time.
Accompanying drawing 3 is the I-V curve figure of the organic film diode encapsulated test for the first time.
Accompanying drawing 4 is second of I-V curve figure tested of unencapsulated organic film diode.
Accompanying drawing 5 is second of the I-V curve figure tested of organic film diode encapsulated.
Accompanying drawing 6 is the I-V curve figure of unencapsulated organic film diode last time test.
Accompanying drawing 7 is the I-V curve figure of the organic film diode last time test encapsulated.
Embodiment：
Embodiment 1：
A kind of vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation, its composition include：Glass substrate, in described glass substrate
Cu film layers are connected, conducting channel CoPc film layers is connected in described Cu film layers, forms ohm of non-rectification between the two
Contact, Al film layers are connected in described CoPc film layers, form Schottky contacts between the two.Described Al film layer overlyings
One layer of PI packaging film of lid.
The vertical stratification Cobalt Phthalocyanine Thin Film diode of described PI encapsulation, the thickness of described Cu film layers is 80nm, described
The thickness of CoPc film layers is 220nm, the thickness 20nm of described metal Al film layers, and described PI thinner package thicknesses of layers is
28um。
Embodiment 2：
A kind of preparation method of the vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation described in embodiment 1, on a glass substrate
Deposit one layer of Cu film, then be deposited one layer of CoPc film layer, finally make Al film layers, then by device with PI with asphalt mixtures modified by epoxy resin
The mode that fat solidifies in ultraviolet is packaged.
The preparation method of the vertical stratification Cobalt Phthalocyanine Thin Film diode of described PI encapsulation, Cu films are 2.1 in vacuum
×100Under conditions of Pa, argon flow amount are 5.3sccm prepared by magnetron sputtering 50s；Organic C oPc films are to be in vacuum
2.4×10-3Prepared by Pa, temperature carry out 2h10min vacuum evaporations under conditions of being 350 DEG C；Metal Al films are in vacuum
For 2.3 × 100Under conditions of Pa, argon flow amount are 5.3sccm obtained from magnetron sputtering 50s；Then it is 28um's by thickness
Kapton, which is covered in above glass substrate, to be solidified 15min under ultraviolet light with epoxy resin and is packaged.
Embodiment 3：
The preparation method and identical preparation method of a kind of vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation described in embodiment 2
But unpackaged device carries out the stability contrast of a period of time, it is known that relative to unpackaged device, using polyimides
Device after dense film encapsulation has effectively obstructed damage of the external environment to device, and protects the performance of device, slows down
The performance of organic film device and the rate of decay in life-span.
Claims (4)
1. a kind of vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation, its composition include：Glass substrate, it is characterized in that：It is described
Glass substrate on connect Cu film layers, conducting channel CoPc film layers are connected in described Cu film layers, are formed between the two
The Ohmic contact of non-rectification, Al film layers are connected in described CoPc film layers, form Schottky contacts between the two, it is described
One layer of PI packaging film is covered in Al film layers.
2. the vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation according to claim 1, it is characterized in that：Described Cu is thin
The thickness of film layer is 80nm, and the thickness of described CoPc film layers is 220nm, the thickness 20nm of described metal Al film layers,
Described PI thinner packages thicknesses of layers is 28um.
3. a kind of preparation method of the vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation, it is characterized in that：Sink on a glass substrate
Product one layer of Cu film, then be deposited one layer of CoPc film layer, finally make Al film layers, then by device with PI with epoxy resin
The mode solidified in ultraviolet is packaged.
4. the preparation method of the vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation according to claim 3, it is characterized in that：
Cu films are 2.1 × 10 in vacuum0Under conditions of Pa, argon flow amount are 5.3sccm prepared by magnetron sputtering 50s；It is organic
CoPc films be vacuum be 2.4 × 10-3Pa, temperature are made to carry out 2h10min vacuum evaporations under conditions of 350 DEG C
's；Metal Al films are 2.3 × 10 in vacuum0Pa, argon flow amount obtain for magnetron sputtering 50s under conditions of 5.3sccm
's；Then thickness is covered in into glass substrate top epoxy resin for 28um Kapton under ultraviolet light to consolidate
Change 15min to be packaged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710830340.0A CN107681051A (en) | 2017-09-15 | 2017-09-15 | The vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710830340.0A CN107681051A (en) | 2017-09-15 | 2017-09-15 | The vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107681051A true CN107681051A (en) | 2018-02-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710830340.0A Pending CN107681051A (en) | 2017-09-15 | 2017-09-15 | The vertical stratification Cobalt Phthalocyanine Thin Film diode of PI encapsulation |
Country Status (1)
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| CN (1) | CN107681051A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070241325A1 (en) * | 2004-06-10 | 2007-10-18 | Yamanashi University | Schottky Gate Organic Field Effect Transistor and Fabrication Method of the Same |
| CN101241970A (en) * | 2003-03-21 | 2008-08-13 | 清华大学 | Organic film field effect transistor and its encapsulation method |
-
2017
- 2017-09-15 CN CN201710830340.0A patent/CN107681051A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101241970A (en) * | 2003-03-21 | 2008-08-13 | 清华大学 | Organic film field effect transistor and its encapsulation method |
| US20070241325A1 (en) * | 2004-06-10 | 2007-10-18 | Yamanashi University | Schottky Gate Organic Field Effect Transistor and Fabrication Method of the Same |
Non-Patent Citations (1)
| Title |
|---|
| 刘跃 等: "Al／CuPc／Cu肖特基气敏二极管制备与特性", 《第十三届全国工程电介质学术会议论文集》 * |
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Application publication date: 20180209 |