CN110379924A - A kind of perovskite infrared electro transistor and preparation method thereof - Google Patents
A kind of perovskite infrared electro transistor and preparation method thereof Download PDFInfo
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- CN110379924A CN110379924A CN201910501006.XA CN201910501006A CN110379924A CN 110379924 A CN110379924 A CN 110379924A CN 201910501006 A CN201910501006 A CN 201910501006A CN 110379924 A CN110379924 A CN 110379924A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 37
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- 150000004706 metal oxides Chemical class 0.000 claims abstract description 93
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 92
- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 239000000463 material Substances 0.000 claims abstract description 80
- 238000009396 hybridization Methods 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 92
- 238000000034 method Methods 0.000 claims description 69
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
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- 238000004528 spin coating Methods 0.000 claims description 18
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- 239000010703 silicon Substances 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
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- 229910001419 rubidium ion Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 3
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- 229910001451 bismuth ion Inorganic materials 0.000 claims description 3
- NCMHKCKGHRPLCM-UHFFFAOYSA-N caesium(1+) Chemical compound [Cs+] NCMHKCKGHRPLCM-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
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- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 claims description 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 claims description 3
- 229940006461 iodide ion Drugs 0.000 claims description 3
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- BAVYZALUXZFZLV-UHFFFAOYSA-N mono-methylamine Natural products NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 3
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- NCCSSGKUIKYAJD-UHFFFAOYSA-N rubidium(1+) Chemical compound [Rb+] NCCSSGKUIKYAJD-UHFFFAOYSA-N 0.000 claims description 3
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- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 2
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
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- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
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- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
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- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UHPJWJRERDJHOJ-UHFFFAOYSA-N ethene;naphthalene-1-carboxylic acid Chemical compound C=C.C1=CC=C2C(C(=O)O)=CC=CC2=C1 UHPJWJRERDJHOJ-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
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- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thin Film Transistor (AREA)
Abstract
The embodiment of the present invention provides a kind of perovskite infrared electro transistor and preparation method thereof, comprising: base substrate；Source and drain metal electrodes are deposited on base substrate upper surface；Metal oxide semiconductor films and source and drain metal electrodes are in the same plane；Charge transport interface layer separates the patterned organic inorganic hybridization infrared acquisition perovskite material bed of material with source and drain metal electrodes, metal oxide semiconductor films；The patterned organic inorganic hybridization infrared acquisition perovskite material bed of material is completely covered by charge transport interface layer, is located at right above metal oxide semiconductor films, and projected area is equal to metal oxide semiconductor films；Passivation layer all covers the charge transport interface layer, the patterned organic inorganic hybridization infrared acquisition perovskite material bed of material, and projected area is equal to base substrate；Hydrophobic layer film covers all perovskites infrared luminescent crystal catheter device part in addition to metal oxide semiconductor films.
Description
Technical field
The present invention relates to optical detector field more particularly to a kind of perovskite infrared electro transistor device and its preparation sides
Method.
Background technique
Metal oxide semiconductor films transistor, especially indium gallium zinc oxide (IGZO) thin film transistor (TFT) have steady
Fixed, high mobility, it is transparent, homogeneity is good the features such as, be widely used in display panel array and detector array, but IGZO
Material since its forbidden bandwidth is larger (> 3eV), for 420nm or more visible light wave range without obvious responsing to.Organic inorganic hybridization
Perovskite material has that wider light abstraction width, carrier mobility be high, carrier generates that speed is fast, carrier diffusion length
Long, the features such as carrier lifetime is long, the excellent optical absorption characteristics of organic inorganic hybridization perovskite material make it in photodetection
Device field also has to be widely applied very much.It, can be infrared by organic inorganic hybridization in order to realize preferable infrared electro detection effect
Detection perovskite material prepares a kind of novel infrared photoelectric detector in conjunction with MOS transistor.
In realizing process of the present invention, at least there are the following problems in the prior art: organic inorganic hybridization for inventor's discovery
Infrared acquisition perovskite material is directly contacted with metal oxide, and the ion of perovskite material enters the gold using IGZO as representative
Belong in oxide skin(coating), brings the deterioration of IGZO material property；The dark current of phototransistor is larger.
Summary of the invention
The embodiment of the present invention provides the embodiment of the present invention and provides a kind of perovskite infrared electro transistor and preparation method, will
Patterned organic inorganic hybridization infrared acquisition perovskite material passes through fine and close charge transport interface layer and metal oxide half
Conductor thin film separates, and combines, provides with source and drain metal electrodes with the coplanar structure of metal oxide semiconductor films
It is low with dark current, fast response time, the infrared electro transistor of wide spectrum response, and preparation process is simple, device success
Rate is high, and in optical detector field, potentiality are very big.
On the one hand, the embodiment of the invention provides a kind of perovskite infrared electro transistor, the perovskite infrared electros
Transistor includes: base substrate；
Source and drain metal electrodes are deposited on base substrate upper surface；
In the same plane, metal oxide semiconductor films cover for metal oxide semiconductor films and source and drain metal electrodes
It covers at source and drain metal electrodes channel or source and drain metal electrodes is completely covered；
Charge transport interface layer is completely covered by metal oxide semiconductor films, and charge transport interface layer will be graphical
The organic inorganic hybridization infrared acquisition perovskite material bed of material separated with source and drain metal electrodes, metal oxide semiconductor films；
The patterned organic inorganic hybridization infrared acquisition perovskite material bed of material is completely covered by charge transport interface layer, position
Right above metal oxide semiconductor films, and projected area is equal to metal oxide semiconductor films；
Passivation layer is complete by the charge transport interface layer, the patterned organic inorganic hybridization infrared acquisition perovskite material bed of material
Portion's covering, projected area are equal to base substrate；
Hydrophobic layer film covers the infrared luminescent crystal catheter device of all perovskites in addition to metal oxide semiconductor films
Part.
The base substrate includes: substrate, the grid on substrate, the gate insulating layer on grid；The lining
Bottom are as follows: silicon substrate, glass substrate, quartz substrate, polyimides PI substrate, polyethylene terephtalate substrate and poly-
(ethylene naphthalate) PEN substrate.
Further, the base substrate is the silicon substrate for being covered with silica.
Further, the material of the hydrophobic layer film includes: perfluorinated resin CYTOP；
The material of the charge transport interface layer includes: Fullerene C20, fullerene derivate PCBM, fullerene derivate
The mixture of ICBA, fullerene and its derivative and polymetylmethacrylate；
The charge transport interface layer with a thickness of 10nm to 90nm；
The chemical formula of the material of the patterned organic inorganic hybridization infrared acquisition perovskite material bed of material is ABX3, A packet
Include methylamine ion CH3NH3 +, methanediamine ion NH2CHNH2 +, cesium ion CS+, rubidium ion Rb+And this several cation is according to one
Certainty ratio mixes the mixture being formed by, and B includes lead ion Pb2+, tin ion Sn2+, bismuth ion Bi2+, europium ion Eu2+And
This several cation mixes the mixture being formed by according to a certain percentage, wherein tin ion Sn2+It is the element that must contain, it is excellent
Choosing, Sn ion accounts for the ratio of B cation elements between 40%-60%；X includes iodide ion I-, chloride ion Cl-Or bromine from
Sub- Br-；The perovskite has the infrared Absorption ability of 800nm to 1100nm.
The patterned organic inorganic hybridization infrared acquisition perovskite thickness 20nm to 2um；
The material of the metal oxide semiconductor films includes: indium gallium zinc oxide IGZO, indium zinc tin oxide
IZTO, Al-Doped ZnO AZO, zinc tin oxide ZTO, magnesium-zinc oxide MZO；
The metal oxide semiconductor films with a thickness of 10nm to 100nm；
The material of the passivation layer includes: polymetylmethacrylate, perfluorinated resin CYTOP, silicon oxide siox, nitrogen
SiClx SiNxAnd aluminium oxide Al2O3；
The thickness 20nm to 900nm of the passivation layer.
Further, the grid and source and drain metal electrodes are molybdenum, gold, silver, aluminium, copper product electrode；
The shape of the grid and source and drain metal electrodes is strip and block or interdigital bulk；
The grid and source and drain metal electrodes with a thickness of 30nm to 200nm；
The channel length that the source and drain metal electrodes are formed is 1um to 100um, and width is 1um to 1000um；The grid
Insulating layer is silicon oxide siox, silicon nitride SiNx, aluminium oxide Al2O3, hafnium oxide HfO2Material；
The gate insulating layer thickness is 50nm to 500nm.
On the other hand, the embodiment of the present invention provides the preparation method of above-mentioned perovskite infrared electro transistor, the calcium titanium
The preparation method of mine infrared electro transistor includes:
Source and drain metal electrodes are deposited in the base substrate；
Metal oxide semiconductor films are covered at the source and drain metal electrodes channel；
The hydrophobic layer film will be completely covered except the outer portion of the metal oxide；
Charge transport interface layer is prepared on the metal oxide semiconductor films；
Graphical machine inorganic hybridization infrared acquisition calcium titanium ore bed, the charge are prepared on the charge transport interface layer
Transport interface layer at least separates graphical organic inorganic hybridization calcium titanium ore bed with metal oxide semiconductor films；
Prepare passivation layer above the base substrate, the passivation layer is by the charge transport interface layer and organic-inorganic
Hydridization infrared acquisition calcium titanium ore bed all covers.
Further, the base substrate specifically includes:
Grid is deposited over the substrate；
Gate insulating layer is deposited on the grid；
The base substrate further include: selection is covered with the silicon substrate of silica.
Further, the grid is grown on substrate using magnetron sputtering method or vacuum vapour deposition, then passes through light
It scribes journey and forms gate patterns；
It is grown on grid using gate insulating layer described in magnetron sputtering method or chemical vapour deposition technique；
The source and drain metal electrodes are directly grown into base substrate using magnetron sputtering method or vacuum vapour deposition, then
Source and drain metal electrodes figure is formed by lithographic process；
The metal oxide semiconductor films are directly grown by the source using magnetron sputtering method or solution processing method
Metal electrode is leaked, blocky active area figure is then formed by lithographic process, the metal oxide semiconductor films have at this time
Source region and source and drain metal electrodes have certain overlapping；
Device is made annealing treatment using oxygen atmosphere, nitrogen atmosphere or air atmosphere, annealing temperature be 100 DEG C extremely
450 DEG C, annealing time 0.5 hour to 4 hours.
Further, charge is prepared on metal oxide semiconductor films using solution processing method or vacuum vapour deposition to pass
Defeated boundary layer；
Using solution processing method and lithographic process or method for etching plasma in the outer portion for removing the metal oxide
Prepare hydrophobic material film layer；
Using solution spin-coating method or knife coating or spray coating method or vacuum vapour deposition or chemical vapour deposition technique or silk screen
Print process or roll-to-roll print process prepare a layer pattern organic inorganic hybridization infrared acquisition on the charge transport interface layer
Calcium titanium ore bed, the graphical organic inorganic hybridization infrared acquisition calcium titanium ore bed projected area is no more than the metal oxide half
Conductor thin film；
By solution spin-coating method or magnetron sputtering method or chemical vapour deposition technique in the organic inorganic hybridization infrared acquisition
One layer of passivation layer is prepared on calcium titanium ore bed, the passivation layer is by the charge transport interface layer and patterned organic inorganic hybridization
Infrared acquisition calcium titanium ore bed all covers.
Above-mentioned technical proposal has the following beneficial effects:
The present invention is using metal-oxide semiconductor (MOS) as phototransistor channel material, organic inorganic hybridization infrared acquisition
Perovskite is as light absorption layer material, and fine and close charge transport interface layer is by patterned organic inorganic hybridization calcium titanium ore bed and gold
Belong to oxide semiconductor thin-film to separate, prepares metal-oxide semiconductor (MOS) and infrared acquisition perovskite material lamination and electric
The transistor of lotus transport interface layer separation structure, be not only utilized using IGZO as the stabilization of the metal-oxide semiconductor (MOS) of representative,
High mobility, feature transparent, homogeneity is good, and had excellent performance using organic inorganic hybridization infrared acquisition perovskite is this
Light absorbing material is strong to infrared Absorption characteristic using it, mobility is high, carrier generates fireballing feature and overcomes with IGZO
Forbidden bandwidth for the metal oxide semiconductor material of representative is larger, can not to the weakness that infrared light is effectively absorbed, and
And forbidden bandwidth can be adjusted by adjusting the Br content in perovskite.Fine and close charge transport interface layer will be patterned organic
Inorganic hybridization infrared acquisition perovskite is separated with metal oxide, and the ion for avoiding calcium titanium ore bed enters using IGZO as representative
Metal oxide layer, the village bring IGZO expect characteristic deterioration.Therefore, miscellaneous in conjunction with metal-oxide semiconductor (MOS)/organic-inorganic
Change infrared acquisition perovskite material, and is separated prepared perovskite infrared electro by fine and close charge transport interface layer
Detector can sufficiently combine the photoelectricity of metal-oxide semiconductor (MOS) high mobility and the high light absorptive performance preparation of perovskite material
Transistor, the technical effect that low, fast response time, wide spectrum respond with dark current；The preparation method of the embodiment of the present invention with
Current technique platform has good compatibility, and the preparation process of device is simple, and device success rate is high.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is the structural schematic diagram of 1 perovskite infrared electro transistor of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of 2 perovskite infrared electro transistor of the embodiment of the present invention；
Fig. 3 is perovskite infrared electro transistor preparation method flow chart of the embodiment of the present invention；
Fig. 4 is the sub-process figure of perovskite infrared electro transistor base substrate preparation method of the embodiment of the present invention；
Fig. 5 is that the structural schematic diagram after grid is deposited on 1 substrate of the embodiment of the present invention；
Fig. 6 is that the structural schematic diagram after gate insulating layer is deposited on 1 grid of the embodiment of the present invention；
Fig. 7 is that the structural schematic diagram after source and drain metal electrodes is deposited on 1 gate insulating layer of the embodiment of the present invention；
Fig. 8 is after covering upper metal oxide semiconductor films at 1 source and drain metal electrodes channel of the embodiment of the present invention
Structural schematic diagram；
Fig. 9 is the embodiment of the present invention 1 in the base substrate and device rest part in addition to metal oxide semiconductor films
Cover the structural schematic diagram after hydrophobic film；
Figure 10 is the structure after the upper charge transport interface layer of 1 metal oxide semiconductor films of embodiment of the present invention covering
Schematic diagram；
Figure 11 is to prepare patterned organic inorganic hybridization infrared acquisition calcium on 1 charge transport interface layer of the embodiment of the present invention
Structural schematic diagram after titanium ore layer；
Figure 12 is that the structure that the embodiment of the present invention 2 is covered with after depositing source and drain metal electrodes on the silicon substrate of silica is shown
It is intended to；
Figure 13 is after covering upper metal oxide semiconductor films at 2 source and drain metal electrodes channel of the embodiment of the present invention
Structural schematic diagram；
Figure 14 is the embodiment of the present invention 2 in the base substrate and device rest part in addition to metal oxide semiconductor films
Cover the structural schematic diagram after hydrophobic film；
Figure 15 is the structure after the upper charge transport interface layer of 2 metal oxide semiconductor films of embodiment of the present invention covering
Schematic diagram；
Figure 16 is to prepare graphical organic inorganic hybridization infrared acquisition calcium titanium on 2 charge transport interface layer of the embodiment of the present invention
Structural schematic diagram after ore bed；
Figure 17 is the transfer characteristic curve under the conditions of perovskite of embodiment of the present invention infrared electro transistor brightness.
Appended drawing reference indicates are as follows: 1- substrate, 2- grid, 3- gate insulating layer, 4- source and drain metal electrodes, 5- metal
Oxide semiconductor thin-film, 6- hydrophobic material film layer, 7- charge transport interface layer, the patterned organic inorganic hybridization of 8-
Infrared acquisition calcium titanium ore bed, 9- passivation layer, 10- are covered with the silicon substrate of silica.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
A kind of perovskite infrared electro transistor provided by the invention includes:
Base substrate；
Source and drain metal electrodes 4 are deposited on base substrate upper surface；
Metal oxide semiconductor films 5 and source and drain metal electrodes 4 in the same plane, metal oxide semiconductor films
5 are covered at 4 channel of source and drain metal electrodes or source and drain metal electrodes 4 are completely covered；
Charge transport interface layer 7 is completely covered by metal oxide semiconductor films 5, and charge transport interface layer 7 will scheme
The organic inorganic hybridization infrared acquisition perovskite material bed of material 2 and source and drain metal electrodes 4, metal oxide semiconductor films 5 of shape
It separates；
The patterned organic inorganic hybridization infrared acquisition perovskite material bed of material 8 is completely covered by charge transport interface layer 7,
Right above metal oxide semiconductor films 5, and projected area is equal to metal oxide semiconductor films 5；
Passivation layer 9 is by the charge transport interface layer 7, the patterned organic inorganic hybridization infrared acquisition perovskite material bed of material
2 all coverings, projected area are equal to base substrate；
Hydrophobic layer film 6 covers the infrared luminescent crystal pipe guide device of all perovskites in addition to metal oxide semiconductor films 5
Part part.
Further, the base substrate includes: substrate 1, the grid 2 on substrate 1, the grid on grid 2
Insulating layer 3；The substrate 1 are as follows: silicon substrate, glass substrate, quartz substrate, polyimides PI substrate, poly terephthalic acid second two
Alcohol ester PET substrate and polyethylene naphthalate PEN substrate.
Further, the base substrate is the silicon substrate 10 for being covered with silica.
Further, the material of the hydrophobic layer film 6 is perfluorinated resin CYTOP, with a thickness of 10nm to 10um；
The charge transport interface layer 7 is fine and close, without hole, and material includes: Fullerene C20, fullerene derivate PCBM, richness
Strangle the one or more of the mixture of ene derivative ICBA, fullerene and its derivative and polymetylmethacrylate；
The charge transport interface layer 7 is with a thickness of 10nm to 90nm, it is preferable that the charge transport interface layer with a thickness of
30nm、40nm、50nm。
The chemical formula of the material of the patterned organic inorganic hybridization infrared acquisition perovskite material bed of material 8 is ABX3, A packet
Include methylamine ion CH3NH3 +, methanediamine ion NH2CHNH2 +, cesium ion CS+, rubidium ion Rb+And this several cation is according to one
Certainty ratio mixes the mixture being formed by, and B includes lead ion Pb2+, tin ion Sn2+, bismuth ion Bi2+, europium ion Eu2+And
This several cation mixes the mixture being formed by according to a certain percentage, wherein tin ion Sn2+ it is the element that must contain,
Preferably, tin ion Sn2+ ratio of B cation elements is accounted between 40%-60%；X includes iodide ion I-, chloride ion Cl-
Or bromide ion Br-One or more；The perovskite has the infrared Absorption ability of 800nm to 1100nm.
The patterned organic inorganic hybridization infrared acquisition perovskite 8 is fine and close, no hole, with a thickness of 20nm to 2um；
5 material of the metal oxide semiconductor films includes: indium gallium zinc oxide IGZO, indium zinc tin oxide
The one or more of IZTO, Al-Doped ZnO AZO, zinc tin oxide ZTO, magnesium-zinc oxide MZO；
The metal oxide semiconductor films 5 with a thickness of 10nm to 100nm；
The material of the passivation layer 9 include: polymetylmethacrylate, perfluorinated resin CYTOP, silicon oxide sio x,
Silicon nitride SiNx and aluminium oxide Al2O3；
The thickness 20nm to 900nm of the passivation layer.
Further, the grid 2 and source and drain metal electrodes 4 are molybdenum, gold, silver, aluminium, copper product electrode；
The shape of the grid 2 and source and drain metal electrodes 4 is strip and block or interdigital bulk；
The grid 2 and source and drain metal electrodes 4 with a thickness of 30nm to 200nm；
The channel length that the source and drain metal electrodes 4 are formed is 1um to 100um, and width is 1um to 1000um；The grid
Pole insulating layer 3 is silicon oxide sio x, silicon nitride SiNx, aluminium oxide Al2O3, hafnium oxide HfO2Material；
The gate insulating layer 3 is with a thickness of 50nm to 500nm.
As shown in Figure 1, for a kind of perovskite infrared electro transistor schematic of the present invention, the perovskite infrared electro is brilliant
Body pipe includes substrate 1, the grid 2 on substrate 1, the gate insulating layer 3 on grid 2, further includes being located at gate insulator
Source and drain metal electrodes 4 on layer 3, metal oxide semiconductor films 5, the base substrate in addition to metal oxide semiconductor films
And the hydrophobic film 6 of device rest part covering, charge transport interface layer is covered on the metal oxide semiconductor films 5
7, the patterned organic inorganic hybridization infrared acquisition perovskite material bed of material 8, the electricity are equipped with above the charge transport interface layer 7
Lotus transport interface layer 7 at least partly leads the patterned organic inorganic hybridization infrared acquisition perovskite material bed of material 8 with metal oxide
Body thin film 5 separates, and the top of substrate 1 is equipped with one layer of passivation layer 9, and the passivation layer 9 is by the charge transport interface layer 7, institute
State all coverings of the organic inorganic hybridization infrared acquisition perovskite material bed of material 8.
As shown in Fig. 2, being 2 perovskite phototransistor schematic diagram of the embodiment of the present invention, the perovskite phototransistor
Silicon substrate 10 including being covered with silica, the source and drain metal electrodes 4 being positioned on the silicon substrate 10 of silica, gold
Belong to oxide semiconductor thin-film 5, the base substrate and the covering of device rest part in addition to metal oxide semiconductor films are dredged
Water film 6 is covered with charge transport interface layer 7, the charge transport interface layer 7 on the metal oxide semiconductor films 5
Top is equipped with the patterned organic inorganic hybridization infrared acquisition perovskite material bed of material 8, and the charge transport interface layer 7 at least will figure
The organic inorganic hybridization infrared acquisition perovskite material bed of material 8 of shape is separated with metal oxide semiconductor films 5, the covering
There is the top of the silicon substrate 10 of silica to be equipped with one layer of passivation layer 9, the passivation layer 9 is by the charge transport interface layer 7, institute
State the patterned all coverings of the organic inorganic hybridization perovskite material bed of material 8.
A kind of perovskite infrared electro transistor provided by the invention and preparation method thereof characterized by comprising
Source and drain metal electrodes 4 are deposited in the base substrate；
Metal oxide semiconductor films 5 are covered at 4 channel of source and drain metal electrodes；
The hydrophobic layer film 6 will be completely covered except the outer portion of the metal oxide 5；
Charge transport interface layer 7 is prepared on the metal oxide semiconductor films 5；
Graphical machine inorganic hybridization infrared acquisition calcium titanium ore bed 2, the electricity are prepared on the charge transport interface layer 7
Lotus transport interface layer 7 at least separates graphical organic inorganic hybridization calcium titanium ore bed 2 with metal oxide semiconductor films 5；
Prepare passivation layer 9 above the base substrate, the passivation layer 9 is by the charge transport interface layer 7 and organic
The all coverings of inorganic hybridization infrared acquisition calcium titanium ore bed 2.
Further, the base substrate specifically includes:
Grid 2 is deposited on the substrate 1；
Gate insulating layer 3 is deposited on the grid 2；
The base substrate further include: selection is covered with the silicon substrate 10 of silica.
Further, the grid 2 is grown on substrate 1 using magnetron sputtering method or vacuum vapour deposition, is then passed through
Lithographic process forms gate patterns；
It is grown on grid 2 using magnetron sputtering method or chemical vapour deposition technique gate insulating layer 3；
Source and drain metal electrodes 4 are directly grown into base substrate using magnetron sputtering method or vacuum vapour deposition, are then led to
It crosses lithographic process and forms source and drain metal electrodes figure, obtaining channel width-over-length ratio is 10；
Metal oxide semiconductor films 5 are directly grown by the source and drain gold using magnetron sputtering method or solution processing method
Belong on electrode 4, blocky active area figure is then formed by lithographic process, the metal oxide semiconductor films 5 have at this time
Source region and source and drain metal electrodes 4 have certain overlapping；
Device is made annealing treatment using oxygen atmosphere, nitrogen atmosphere or air atmosphere, annealing temperature be 100 DEG C extremely
450 DEG C, annealing time 0.5 hour to 4 hours.
Further, charge is prepared on metal oxide semiconductor films 5 using solution processing method or vacuum vapour deposition
Metal oxide semiconductor films 5 are completely covered in transport interface layer 7, charge transport interface layer 7；
Using solution processing method and lithographic process or method for etching plasma in the substrate in addition to the metal oxide 5
And device rest part prepares hydrophobic material film layer 6, hydrophobic material film layer 6 will be in addition to metal oxide semiconductor films 5
Substrate and device rest part be completely covered；
Using solution spin-coating method or knife coating or spray coating method or vacuum vapour deposition or chemical vapour deposition technique or silk screen
Print process or roll-to-roll print process prepare a layer pattern organic inorganic hybridization infrared acquisition calcium on charge transport interface layer 7
Titanium ore layer 8, graphical 8 projected area of organic inorganic hybridization infrared acquisition calcium titanium ore bed are not more than the metal-oxide semiconductor (MOS)
Film 5；
By solution spin-coating method or magnetron sputtering method or chemical vapour deposition technique in the organic inorganic hybridization infrared acquisition
One layer of passivation layer 9 is prepared on calcium titanium ore bed 8, the passivation layer 9 is by the charge transport interface layer 7 and patterned organic-inorganic
The all coverings of hydridization infrared acquisition calcium titanium ore bed 8.
Application example will be lifted below with reference to attached drawing the present invention will be described in detail in conjunction with the embodiments embodiment above-mentioned technical proposal,
The preparation method of the novel perovskite infrared electro transistor of invention application example is summarized as follows:
1, it selects glass substrate or is covered with the silicon substrate of 300nm silica as substrate material, the preceding substrate point of experiment
Not in deionized water, acetone, each ultrasonic 15 minutes in alcohol.(lining is used as using the silicon substrate for being covered with 300nm silica
The preparation that the Mo of step 4 source and drain metal electrodes is then jumped directly to after step 1 substrate cleans is completed at bottom)
2, the preparation of grid Mo
(1) prepare before magnetron sputtering
Spin coating photoresist, and keep effective coverage exposed using photoetching, inactive area is covered by photoresist.
(2) preparation of Mo electrode
The good substrate of photoetching is put into magnetic control platform, when vacuum reaches 9.9 × 10- in sputtering unit case4When Pa, it is passed through
Argon Ar obtains the Mo of 120nm thickness so that intracavitary vacustat sputters 150s in 0.36Pa, using Dc source power 80W
Film, and gate patterns are formed by removing.
3, gate insulation layer SiO2Preparation
Print is put into plasma enhanced CVD PECVD system reaction chamber, reaction chamber is evacuated to high vacuum,
Reaction chamber temperature rises to 300 DEG C, radio-frequency power 30W, is then passed through the silane that flow is 100sccm simultaneously into reaction chamber
SiH4With the nitrous oxide N of 400sccm2O, pressure control grow the SiO of 200nm thickness in 0.7Pa2Film.
4, the preparation of source and drain metal electrodes Mo
(1) prepare before magnetron sputtering
Spin coating photoresist, and keep effective coverage exposed using photoetching, inactive area is covered by photoresist.
(2) preparation of Mo electrode
The good substrate of photoetching is put into magnetic control platform, when vacuum reaches 9.9 × 10- in sputtering unit case4When Pa, it is passed through
Argon Ar obtains the Mo of 120nm thickness so that intracavitary vacustat sputters 150s in 0.36Pa, using Dc source power 80W
Film, and source and drain figure is formed by removing.
5, the preparation of active layer indium gallium zinc oxide IGZO
(1) preparation of IGZO film
It places the substrate into magnetic control platform, when vacuum reaches 5 × 10 in sputtering unit case-4When Pa, it is passed through argon Ar and oxygen
Gas O2, flow-rate ratio 47: 3, using Dc source power 100W sputter 300s, obtain the IGZO film of 40nm thickness.
(2) IGZO's is graphical
Spin coating photoresist, photoetching simultaneously etch IGZO film with dilute hydrochloric acid；Photoresist is removed using acetone ultrasound.
6, it makes annealing treatment
The transistor device for making metal-oxide film is placed under the conditions of 200 DEG C of purity oxygens and is made annealing treatment 1 hour.
7, the preparation of hydrophobic layer CYTOP
(1) configuration of CYTOP solution
The ratio of CYTOP and solvent (solvent) be 1:10, stirring at normal temperature 1 hour.
(2) preparation of photoetching glue victim layer
Spin coating photoresist, and using photoetching photoresist is only covered on metal oxide semiconductor films, substrate and
Photoresist that remaining position of device is unglazed.
(3) preparation of graphical hydrophobic layer CYTOP is completed
The uniform spin coating of CYTOP solution being stirred is adsorbed on the substrate surface including photoetching glue victim layer, revolving speed
3000rpm, spin coating 60s, and 100 DEG C of annealing 30s on warm table, are then placed in acetone soln and impregnate after ultrasound 10s
10min obtains the graphical CYTOP hydrophobic layer with a thickness of 20nm to 30nm then in 100 DEG C of annealing 10min of warm table,
CYTOP hydrophobic layer by addition to metal oxide semiconductor films substrate and device rest part all cover.
8, C60 layers of charge transport interface layer preparation
(1) preparation before being deposited
By include be deposited figure metal mask version be attached together with substrate.
(2) C60 layers of charge transport interface layer of preparation
It places the substrate into vacuum evaporation plating machine, when vapor deposition house vacuum reaches 5 × 10-4When Pa, start that C60, vapor deposition is deposited
Temperature is 400 DEG C, evaporation rate 1.2nm/min, obtains the C60 charge transport interface layer film of 70nm thickness, and charge transmits boundary
Surface layer even compact, no hole, and metal oxide semiconductor films layer is completely covered.
9, patterned organic inorganic hybridization infrared acquisition perovskite (CH3NH3)0.4(NH2CHNH2)0.6Sn0.6Pb0.4I3Layer
Preparation
(1) configuration of infrared acquisition perovskite precursor liquid
Configuration concentration is the methylamine lead iodine CH of 1.25mol/L3NH3PbI3With methanediamine iodine tin NH2CHNH2SnI3Solution, often
Temperature stirring 12 hours,
After mixing evenly according to volume ratio 2:3 mixing methylamine lead iodine CH3NH3PbI3With methanediamine iodine tin NH2CHNH2SnI3It is molten
Liquid, and stirring at normal temperature 12 hours.
(3) patterned organic inorganic hybridization infrared acquisition perovskite (CH3NH3)0.4(NH2CHNH2)0.6Sn0.6Pb0.4I3Layer
Preparation
On substrate by the uniform spin coating absorption of the organic inorganic hybridization infrared acquisition perovskite precursor liquid being mixed evenly,
Revolving speed is 4000rpm, spin coating 30s, and 10 minutes dry at 100 DEG C of warm table, is obtained with a thickness of the equal of 500nm to 700nm
The organic inorganic hybridization infrared acquisition perovskite (CH of even densification3NH3)0.4(NH2CHNH2)0.6Sn0.6Pb0.4I3Layer.
9, the preparation of passivation layer CYTOP
(1) configuration of CYTOP solution
The ratio of CYTOP and solvent (solvent) be 1:5, stirring at normal temperature 1 hour.
(2) preparation of passivation layer CYTOP is completed
The CYTOP solution that will be stirred, uniform spin coating are adsorbed on substrate, revolving speed 2000rpm, spin coating 60s, and are being added
It is 10 minutes dry at 100 DEG C of thermal station, obtain the passivation layer of the even compact with a thickness of 40nm to 60nm.
Experiment effect: novel perovskite infrared electro transistor is tested for the property using semiconductor analysis instrument.
As shown in figure 17, the perovskite infrared electro transistor proposed for application example of the present invention turns under the conditions of brightness
Move characteristic curve.The additional 2V in source and drain both ends, transistor off-state current is 8.43 × 10 when no light-10A is 3.5mW/ in light intensity
cm2, light source that wavelength is 900nm irradiates the off-state current of lower transistor and rises to 3.15 × 10-8A；Under OFF state, brightness electric current ratio
It is 37.4.
To sum up, the organic inorganic hybridization infrared acquisition perovskite of a layer pattern is deposited on IGZO transistor
(CH3NH3)0.4(NH2CHNH2)0.6Sn0.6Pb0.4I3Layer, greatly improved absorption of the detector to infrared band, using putting down altogether
The IGZO transistor of face structure using perfluorinated resin CYTOP as hydrophobic layer, and has done graphical treatment to hydrophobic layer, so that dredging
Water layer covers substrate and device rest part in addition to metal oxide semiconductor films, with common organic electron transport layer C60
As charge transport interface layer, so that it is vaporized on metal oxide using the method that mask plate (shadow mask) is deposited and partly lead
On body thin film, the method for reusing spin coating absorption forms organic inorganic hybridization infrared acquisition perovskite (CH after annealing3NH3)0.4
(NH2CHNH2)0.6Sn0.6Pb0.4I3Layer, this method avoid the ion in perovskite and enter IGZO layers of bring IGZO characteristics deterioration,
The disadvantage for causing dark current larger when perovskite thin film and metal source and drain electrodes directly contact in spin-coating method is also avoided simultaneously.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (9)
1. a kind of perovskite infrared electro transistor characterized by comprising
Base substrate；
Source and drain metal electrodes (4) are deposited on base substrate upper surface；
Metal oxide semiconductor films (5) and source and drain metal electrodes (4) in the same plane, metal oxide semiconductor films
(5) it is covered at source and drain metal electrodes (4) channel or source and drain metal electrodes (4) is completely covered；
Charge transport interface layer (7) is completely covered by metal oxide semiconductor films (5), and charge transport interface layer (7) will
The patterned organic inorganic hybridization infrared acquisition perovskite material bed of material (8) and source and drain metal electrodes (4), metal-oxide semiconductor (MOS)
Film (5) separates；
The patterned organic inorganic hybridization infrared acquisition perovskite material bed of material (8) is completely covered by charge transport interface layer (7),
Right above metal oxide semiconductor films (5), and projected area is equal to metal oxide semiconductor films (5)；
Passivation layer (9) is by the charge transport interface layer (7), the patterned organic inorganic hybridization infrared acquisition perovskite material bed of material
(8) all coverings, projected area are equal to base substrate；
Hydrophobic layer film (6) covers the infrared luminescent crystal pipe guide device of all perovskites in addition to metal oxide semiconductor films (5)
Part part.
2. perovskite infrared electro transistor according to claim 1, it is characterised in that:
The base substrate includes: substrate (1), the grid (2) being located on substrate (1), the gate insulating layer being located on grid (2)
(3)；The substrate (1) are as follows: silicon substrate, glass substrate, quartz substrate, polyimides PI substrate, polyethylene terephthalate
Ester PET substrate and polyethylene naphthalate PEN substrate.
3. perovskite infrared electro transistor according to claim 1, it is characterised in that:
The base substrate is the silicon substrate (10) for being covered with silica.
4. perovskite infrared electro transistor according to claim 1, it is characterised in that:
The material of the hydrophobic layer film (6) includes: perfluorinated resin CYTOP；
The material of the charge transport interface layer (7) includes: Fullerene C20, fullerene derivate PCBM, fullerene derivate
The mixture of ICBA, fullerene and its derivative and polymetylmethacrylate；
The charge transport interface layer (7) with a thickness of 10nm to 90nm；
The chemical formula of the material of the patterned organic inorganic hybridization infrared acquisition perovskite material bed of material (8) is ABX3, A includes
Methylamine ion CH3NH3 +, methanediamine ion NH2CHNH2 +, cesium ion CS+, rubidium ion Rb+And this several cation is according to certain
Ratio mixes the mixture being formed by, and B includes lead ion Pb2+, tin ion Sn2+, bismuth ion Bi2+, europium ion Eu2+And this
Several cation mixes the mixture being formed by according to a certain percentage, wherein tin ion Sn2+It is the element that must contain, preferably
, tin ion Sn2+The ratio of B cation elements is accounted between 40%-60%；X includes iodide ion I-, chloride ion Cl-Or bromine
Ion Br-；The perovskite has the infrared Absorption ability of 800nm to 1100nm；
Patterned organic inorganic hybridization infrared acquisition perovskite (8) the thickness 20nm to 2um；
The material of (5) of the metal oxide semiconductor films includes: indium gallium zinc oxide IGZO, indium zinc tin oxide
IZTO, Al-Doped ZnO AZO, zinc tin oxide ZTO, magnesium-zinc oxide MZO；
The metal oxide semiconductor films (5) with a thickness of 10nm to 100nm；
The material of the passivation layer (9) includes: polymetylmethacrylate, perfluorinated resin CYTOP, silicon oxide siox, nitridation
Silicon SiNxAnd aluminium oxide Al2O3；
The thickness 20nm to 900nm of the passivation layer.
5. perovskite infrared electro transistor according to claim 2, which is characterized in that
The grid (2) and source and drain metal electrodes (4) are molybdenum, gold, silver, aluminium, copper product electrode；
The shape of the grid (2) and source and drain metal electrodes (4) is strip and block or interdigital bulk；
The grid (2) and source and drain metal electrodes (4) with a thickness of 30nm to 200nm；
The channel length that the source and drain metal electrodes (4) are formed is 1um to 100um, and width is 1um to 1000um；The grid
Insulating layer (3) is silicon oxide siox, silicon nitride SiNx, aluminium oxide Al2O3, hafnium oxide HfO2Material；
The gate insulating layer (3) is with a thickness of 50nm to 500nm.
6. a kind of method for preparing the perovskite infrared electro transistor as described in any one of claims 1 to 5, feature exist
In,
Source and drain metal electrodes (4) are deposited in the base substrate；
Metal oxide semiconductor films (5) are covered at the source and drain metal electrodes (4) channel；
The hydrophobic layer film (6) will be completely covered except the outer portion of the metal oxide (5)；
Charge transport interface layer (7) is prepared on the metal oxide semiconductor films (5)；
Graphical machine inorganic hybridization infrared acquisition calcium titanium ore bed (8), the electricity are prepared on the charge transport interface layer (7)
Lotus transport interface layer (7) is at least by graphical organic inorganic hybridization calcium titanium ore bed (8) and metal oxide semiconductor films (5) point
It separates；
It is prepared above the base substrate passivation layer (9), the passivation layer (9) is by the charge transport interface layer (7) and has
Machine inorganic hybridization infrared acquisition calcium titanium ore bed (8) all covers.
7. the preparation method of perovskite phototransistor according to claim 6, which is characterized in that
The base substrate specifically includes:
Grid (2) are deposited on the substrate (1)；
Gate insulating layer (3) are deposited on the grid (2)；
The base substrate further include:
Selection is covered with the silicon substrate (10) of silica.
8. the preparation method of perovskite thin film phototransistor according to claim 7, which is characterized in that
The grid (2) is grown on substrate (1) using magnetron sputtering method or vacuum vapour deposition, then passes through lithographic process shape
At gate patterns；
It is grown on grid (2) using gate insulating layer described in magnetron sputtering method or chemical vapour deposition technique (3)；
The source and drain metal electrodes (4) are directly grown into base substrate using magnetron sputtering method or vacuum vapour deposition, then
Source and drain metal electrodes figure is formed by lithographic process；
The metal oxide semiconductor films (5) are directly grown by the source and drain using magnetron sputtering method or solution processing method
Metal electrode (4) then forms blocky active area figure by lithographic process, at this time the metal oxide semiconductor films
(5) active area and source and drain metal electrodes (4) have certain overlapping；
Device is made annealing treatment using oxygen atmosphere, nitrogen atmosphere or air atmosphere, annealing temperature is 100 DEG C to 450 DEG C,
Annealing time 0.5 hour to 4 hours.
9. the preparation method of perovskite thin film phototransistor according to claim 6, which is characterized in that
Charge transport interface layer is prepared on metal oxide semiconductor films (5) using solution processing method or vacuum vapour deposition
(7)；
Using solution processing method and lithographic process or method for etching plasma in the outer portion system for removing the metal oxide (5)
Standby hydrophobic material film layer (6)；
Using solution spin-coating method or knife coating or spray coating method or vacuum vapour deposition or chemical vapour deposition technique or silk-screen printing
Method or roll-to-roll print process prepare a layer pattern organic inorganic hybridization infrared acquisition on the charge transport interface layer (7)
Calcium titanium ore bed (8), graphical organic inorganic hybridization infrared acquisition calcium titanium ore bed (8) projected area are not more than the metal oxygen
Compound semiconductive thin film (5)；
By solution spin-coating method or magnetron sputtering method or chemical vapour deposition technique in the organic inorganic hybridization infrared acquisition calcium titanium
Prepare one layer of passivation layer (9) on ore bed (8), the passivation layer (9) is by the charge transport interface layer (7) and patterned organic
Inorganic hybridization infrared acquisition calcium titanium ore bed (8) all covers.
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