CN101241287A - Liquid crystal display device and array substrate rehabilitation method - Google Patents
Liquid crystal display device and array substrate rehabilitation method Download PDFInfo
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- CN101241287A CN101241287A CNA2008100343862A CN200810034386A CN101241287A CN 101241287 A CN101241287 A CN 101241287A CN A2008100343862 A CNA2008100343862 A CN A2008100343862A CN 200810034386 A CN200810034386 A CN 200810034386A CN 101241287 A CN101241287 A CN 101241287A
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Abstract
The invention relates to a LCD device and a renovation method for the array substrate thereof. The LCD device comprises a thin-film transistor array substrate and a color film substrate both of which are disposed oppositely; liquid crystal molecule layer filled between the thin-film transistor array substrate and the color film substrate; a scanning wiring conductive layer with grid wires and storage capacitance wires formed thereon and a data conductive layer with data wires thereon are disposed on the thin-film transistor array substrate, the grid wires and the data wires cross to form a pixel area; convexes are formed on the surface of the color film substrate; wherein the storage capacitance wires between the adjacent pixels are connected with each other to form a net configuration along the concave direction and are aligned across with the data wires, and are corresponding to the concave positions. The storage capacitance of the invented LCD device is enhanced without affection to the aperture ratio, which facilitates the pixel voltage to keep stable and improves contrast ratio. The invented renovation method can renovate a plurality of data broken wires by using storage capacitance wires connected to be a net as data renovation wires.
Description
Technical field
The present invention relates to the restorative procedure of a kind of liquid crystal indicator and array base palte thereof, relate in particular to a kind of liquid crystal indicator that the many places data line opens circuit and restorative procedure of array base palte thereof repaired.
Background technology
Present LCD is a main flow with Thin Film Transistor-LCD (TFT LCD) mainly, the general structure of TFT LCD (ThinFilm Transistor Liquid Crystal Display) is to comprise thin-film transistor array base-plate respect to one another, color membrane substrates and be clipped in layer of liquid crystal molecule between two substrates.Be formed with thin film transistor (TFT) and pixel electrode on the described array base palte, be formed with red, green, blue three chromatographs and common electrode on the described color membrane substrates.By to the electrode application voltage on the two substrates, LCD produces electric field at layer of liquid crystal molecule, and by the intensity of control electric field change liquid crystal molecule orientation, incide the transmittance that polarized light on the layer of liquid crystal molecule and change incide the light on the layer of liquid crystal molecule and obtain desirable image.The plane-parallel capacitor that two substrates forms, its capacitance size is about 0.1pF, (with the frame updating frequency of general 60Hz, needs to keep the time of about 16ms) when this electric capacity can't remain to voltage next time the frame update data again.Variation has taken place in pixel voltage like this, and the shown GTG of LCD will be incorrect.Therefore generally in the design of array base palte, can add a storage capacitors Cs again, so that when allowing charged pixel voltage can remain to next time frame update.
In LCD, in order to enlarge the visual angle, often adopt vertical orientated (VA) pattern, make liquid crystal molecule have different orientations in zones of different, Fig. 1 is the dot structure figure of existing VA mode LCD, Fig. 2 is A-A ' sectional view of Fig. 1.See figures.1.and.2, the VA mode LCD comprises color membrane substrates 20, thin-film transistor array base-plate 10 and is filled in layer of liquid crystal molecule 24 between substrate 20 and 10; Be formed with colored filter (CF) 21, transparency conducting layer 22 on the described color membrane substrates 20, as ITO (tin indium oxide), the surface of transparency conducting layer 22 is formed with projection (protrusion) 23, be formed with capacitor storage beam 111, dielectric layer 12, pixel electrode 15 on the described array base palte 10, described capacitor storage beam 111 is a H type structure.Change the attribute that acts on the electric field on the layer of liquid crystal molecule 24 by projection 23, thereby control light can see through zones of different, increases the visual angle that shows.Because outshot is not complete light tight zone, therefore the normal light leakage phenomena that takes place at this place reduces the contrast of display degree, for solving the prominence light leakage phenomena, need utilize blackmatrix (black matrix) to be covered.
In the array base palte manufacturing process of LCD, because influences such as the height fluctuating of substrate surface, thermal treatment, etch processs, gate line and data line are easy to break, and then cause the phenomenon of open defect to take place.And along with the area increase of LCD panel, the raising of resolution needs more gate line of production quantity and data line, makes live width become narrower, causes the raising of difficulty in process degree, easier generation broken string phenomenon.When part was opened circuit in the data line existence, the pixel with the latter half circuit control of opening circuit just can not be normally luminous, makes LCD become bad product, reduces the product yield.Therefore, in order to improve the product yield, therefore the technology of various reparation circuits just proposes.Propose utilization as patent CN1527268 and repair the method that line comes the repair data line to open circuit, but this method can only be repaired the situation that occurs the broken string of no more than reparation line number in the display panels.Patent CN200510081052.7 proposes a kind of restorative procedure that the many places data line opens circuit of repairing, and it utilizes the part that data line protrudes to repair.But this method certainly will influence the demonstration image quality of LCD like this to sacrifice aperture opening ratio as cost.
Above mentioned aperture opening ratio is the most important factor of decision LCD brightness.Aperture opening ratio is exactly the permeable effective coverage of light ratio simply.When light emitted via backlight, not all light can both pass panel, storage capacitors of using as signal lead, TFT, stored voltage etc.These places also because these local light of process are not subjected to the control of voltage, and can't show correct GTG except incomplete printing opacity, thus all need utilize black matrix to be covered, in order to avoid interfere with the correct brightness of other transmission region.Effective light transmission zone after covering just is referred to as aperture opening ratio with the ratio of entire area.In the design of TFT LCD, improve aperture opening ratio as far as possible, particularly improving storage capacitors, when carrying out the reparation of data broken string, avoid influencing aperture opening ratio as far as possible.As long as improve aperture opening ratio, just can increase brightness, and the brightness of backlight also need not be so high simultaneously, can save energy and spend.
In order to address this problem, hope can work out a kind of liquid crystal indicator and restorative procedure thereof that aperture opening ratio can be repaired many places data broken string that do not influence.
Summary of the invention
Technical matters to be solved by this invention provides a kind of aperture opening ratio that do not influence can repair the liquid crystal indicator of many places data broken string and the restorative procedure of array base palte thereof.
The present invention solves the problems of the technologies described above the technical scheme that adopts to provide a kind of liquid crystal indicator, comprises thin-film transistor array base-plate respect to one another and color membrane substrates; Be filled in the layer of liquid crystal molecule between thin-film transistor array base-plate and the color membrane substrates; Be formed with scan wiring conductive layer and data conductive layer on the described thin-film transistor array base-plate, be formed with gate line and storage capacitance line on the described scan wiring conductive layer, be formed with data line on the described data conductive layer, described gate line and data line intersect to form pixel region; Described color membrane substrates is formed with projection on the surface; Storage capacitance line between wherein said neighbor is connected to reticulate texture, and the storage capacitance line between neighbor is connected to reticulate texture along projection direction, with described data line cross arrangement, and corresponding with the position of projection.
The present invention also provides a kind of method of repairing thin-film transistor array base-plate, be suitable for above-mentioned thin-film transistor array base-plate is repaired, when data line opens circuit, storage capacitance line is linked to each other with data line, form data path, cut off this storage capacitance line other branch lines on every side simultaneously, in order to avoid storage capacitance line and data line are short-circuited.
In the above-mentioned restorative procedure, described storage capacitance line can link to each other by the laser welding mode with data line.
In the above-mentioned restorative procedure, other branch lines the back side of described array base palte cuts off storage capacitance line in the mode of laser focusing around.
Liquid crystal indicator provided by the invention, because the storage capacitance line between neighbor is connected to reticulate texture, it is as the part of common electrode, compare traditional existing H type storage capacitance line, improve storage capacitors, helped the pixel voltage held stationary, improved contrast.Because cancellated storage capacitance line is extended along color membrane substrates protrusion of surface direction, just in time as the light leakage phenomena of black matrix solution at the projection position place, not sacrificing influences aperture opening ratio again.Therefore, liquid crystal indicator provided by the invention owing to improved storage capacitors, under the prerequisite that satisfies the Cs value, can reduce the width of storage capacitance line, improves aperture opening ratio.Array base palte restorative procedure provided by the invention as the data repair line, can be repaired many places data broken string with netted continuous storage capacitance line.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated, wherein:
Fig. 1 is the dot structure figure of existing liquid crystal indicator.
Fig. 2 is A-A ' sectional view of Fig. 1.
Fig. 3 is the storage capacitance line reticulate texture figure of pixel of the present invention.
Fig. 4 is B-B ' sectional view of Fig. 3.
Fig. 5 is C-C ' sectional view of Fig. 3.
Fig. 6 A～6D is the manufacture process of array base palte of the present invention.
Fig. 7 is for broken data wire of the present invention and repair synoptic diagram.
Embodiment
Fig. 3 is the storage capacitance line reticulate texture figure of pixel of the present invention; Fig. 4 is B-B ' sectional view of Fig. 3; Fig. 5 is C-C ' sectional view of Fig. 3.
Please refer to Fig. 3, Fig. 4 and Fig. 5, liquid crystal indicator of the present invention comprises color membrane substrates 20, thin-film transistor array base-plate 10 and is filled in layer of liquid crystal molecule 24 between substrate 20 and 10; Be formed with colored filter (CF) 21, transparency conducting layer 22 on the described color membrane substrates 20 successively, as ITO (tin indium oxide), the surface of transparency conducting layer 22 is formed with projection (protrusion) 23; Be formed with scan wiring conductive layer and data conductive layer on the described thin-film transistor array base-plate 10, be formed with gate line 112 and storage capacitance line 111 on the described scan wiring conductive layer, be formed with data line 14 on the described data conductive layer, described gate line 112 and data line 14 intersect to form pixel region (not illustrating among the figure).Storage capacitance line 111 between neighbor is extended along projection direction and is connected to reticulate texture, the arrangement that intersects of described netted storage capacitance line 111 and data line 14.The position of described netted storage capacitance line 111 is corresponding with described projection 23.The centre of described netted storage capacitance line 111 and described data line 14 is across gate insulating film 121, and semiconductor layer a-Si 133 and N+Si134 are coated with diaphragm 122 on the data line 14.
Fig. 6 A～6D is the manufacture process of array base palte of the present invention.
At first, please refer to Fig. 6 A, ground floor metal film on washed glass substrate 10 surface sputterings (figure does not show), for example aluminium (Al) or aluminium alloy (AlNd), or metal multilayer film (AlNd/MoNb) is as grid material, at coating photoresist on this metal film and graphically, form gate line 112 and storage capacitance line 111 then by etching.
Subsequently, please refer to Fig. 6 B, on the ground floor metal film, pass through PECVD (plasma-reinforced chemical vapor deposition) process deposits one deck gate insulation layer 121, for example SiNx or SiO
2Gate insulating film.Then at SiNx or SiO
2By CVD technology, continue depositing semiconductor layers a-Si 133 and N+Si 134 on the dielectric film, adopt sputter sputter second layer metal film (figure does not show) at last, for example Cr or Al and alloy material thereof.By GTM (Gray Tone Mask) technology, after employing exposure and the etching, define source electrode 141, drain electrode 142 respectively, semiconductor figure 131 and Ohmic contact 132 are made the TFT on-off element.
Subsequently, please refer to Fig. 6 C, at deposition one deck passivation layer 122 on source electrode 141, drain electrode 142 and memory capacitance electric wire 111, expose then, develop and do and carve by the PECVD technology, obtain the pattern of contact hole 123, as the passage that connects source electrode 141 and pixel electrode 15.
At last, please refer to Fig. 6 D, sputter last layer transparent membrane on dielectric film SiNx (figure do not show) as ITO, carries out obtaining pixel electrode 15 after the operation such as graphical then, so just finishes the manufacturing of thin-film transistor array base-plate.
Fig. 7 is broken data wire of the present invention and repairs synoptic diagram.Please refer to Fig. 7, in the manufacture process of array base palte, for various reasons, cause data line 14 when the d point opens circuit, data line 14 and cancellated storage capacitance line 111 are connected in an e and some f, cut off its other branch line on every side at point 1 respectively to point 8 places simultaneously, in order to avoid storage capacitance line 111 is short-circuited with data line 14.When on the same data lines 14 open circuit in the generation many places, can utilize identical method to repair, by after repairing, the signal of data line 14 can arrive the latter half of broken string position, makes LCDs normally show, improves the product yield like this.
Liquid crystal indicator provided by the invention is connected to reticulate texture owing to be formed with storage capacitance line on array base palte with the storage capacitance line between neighbor, and described cancellated storage capacitance line can be repaired many places data broken string as the data repair line.Cancellated storage capacitance line is compared traditional H type storage capacitance line as the part of common electrode simultaneously, has improved storage capacitors, helps the pixel voltage held stationary, improves contrast.And, just in time, do not sacrifice aperture opening ratio as the light leakage phenomena of black matrix solution at the projection position place because cancellated storage capacitance line is extended along color membrane substrates protrusion of surface direction.In addition, liquid crystal indicator provided by the invention owing to improved storage capacitors, under the prerequisite that satisfies the Cs value, can reduce the width of storage capacitance line, improves aperture opening ratio.As seen from Table 1, liquid crystal indicator provided by the invention, storage capacitance line can be reduced to 5um by original 20um, and aperture opening ratio increases by 2.34%.
Table 1 adopts different pixels parameter and design result
| Prior art | The present invention | |
| Pixel size | 180um×540um | 180um×540um |
| The Cs live width | 20um | 5um |
| The Cs size | 0.62pF | 0.857pF |
| Aperture opening ratio | 48.40％ | 50.74％ |
| Aperture opening ratio increases | 2.34％ | |
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.
Claims (4)
1. a liquid crystal indicator comprises
Thin-film transistor array base-plate respect to one another and color membrane substrates;
Be filled in the layer of liquid crystal molecule between thin-film transistor array base-plate and the color membrane substrates;
Be formed with scan wiring conductive layer and data conductive layer on the described thin-film transistor array base-plate, be formed with gate line and storage capacitance line on the described scan wiring conductive layer, be formed with data line on the described data conductive layer, described gate line and data line intersect to form pixel region;
Described color membrane substrates is formed with projection on the surface;
It is characterized in that the storage capacitance line between neighbor is connected to reticulate texture along projection direction, with described data line cross arrangement, and corresponding with the position of projection.
2. the restorative procedure of a thin-film transistor array base-plate, be suitable for the described thin-film transistor array base-plate of claim 1 is repaired, it is characterized in that, when described data line opens circuit, storage capacitance line is linked to each other with data line, form data path, cut off this storage capacitance line other branch lines on every side simultaneously, in order to avoid storage capacitance line and data line are short-circuited.
3. the restorative procedure of thin-film transistor array base-plate as claimed in claim 2 is characterized in that, described storage capacitance line links to each other by the laser welding mode with data line.
4. the restorative procedure of thin-film transistor array base-plate as claimed in claim 2 is characterized in that, other branch lines the back side of described array base palte cuts off storage capacitance line in the mode of laser focusing around.
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| CN200810034386A CN100593750C (en) | 2008-03-07 | 2008-03-07 | Liquid crystal display device and array substrate rehabilitation method |
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| CN200810034386A CN100593750C (en) | 2008-03-07 | 2008-03-07 | Liquid crystal display device and array substrate rehabilitation method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104166289B (en) * | 2014-08-29 | 2017-03-29 | 南京中电熊猫液晶显示科技有限公司 | TFT LCD arrays substrate and its manufacture method |
| CN107589605A (en) * | 2017-08-25 | 2018-01-16 | 惠科股份有限公司 | A kind of the defects of active array substrate modification method and display device manufacture method |
| CN109254464A (en) * | 2018-11-16 | 2019-01-22 | 成都中电熊猫显示科技有限公司 | array substrate and liquid crystal display panel |
| CN113487962A (en) * | 2020-03-17 | 2021-10-08 | 群创光电股份有限公司 | Display device |
| CN114415433A (en) * | 2022-03-14 | 2022-04-29 | 惠科股份有限公司 | Array substrate, display panel and display device |
-
2008
- 2008-03-07 CN CN200810034386A patent/CN100593750C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104166289B (en) * | 2014-08-29 | 2017-03-29 | 南京中电熊猫液晶显示科技有限公司 | TFT LCD arrays substrate and its manufacture method |
| CN107589605A (en) * | 2017-08-25 | 2018-01-16 | 惠科股份有限公司 | A kind of the defects of active array substrate modification method and display device manufacture method |
| CN109254464A (en) * | 2018-11-16 | 2019-01-22 | 成都中电熊猫显示科技有限公司 | array substrate and liquid crystal display panel |
| CN113487962A (en) * | 2020-03-17 | 2021-10-08 | 群创光电股份有限公司 | Display device |
| CN114415433A (en) * | 2022-03-14 | 2022-04-29 | 惠科股份有限公司 | Array substrate, display panel and display device |
| CN114415433B (en) * | 2022-03-14 | 2022-07-12 | 惠科股份有限公司 | Array substrate, display panel and display device |
| US11841596B2 (en) | 2022-03-14 | 2023-12-12 | HKC Corporation Limited | Array substrate, display panel and display device |
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|---|---|
| CN100593750C (en) | 2010-03-10 |
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