CN104166289B - TFT LCD arrays substrate and its manufacture method - Google Patents
TFT LCD arrays substrate and its manufacture method Download PDFInfo
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- CN104166289B CN104166289B CN201410435994.XA CN201410435994A CN104166289B CN 104166289 B CN104166289 B CN 104166289B CN 201410435994 A CN201410435994 A CN 201410435994A CN 104166289 B CN104166289 B CN 104166289B
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- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000003491 array Methods 0.000 title abstract 2
- 238000003860 storage Methods 0.000 claims abstract description 96
- 238000001514 detection method Methods 0.000 claims abstract description 28
- 230000005611 electricity Effects 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 7
- 210000004027 cell Anatomy 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000007689 inspection Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
The present invention provides a kind of TFT LCD arrays substrate and its manufacture method, the array base palte includes gate line, data wire, several pixel cells limited by gate line and data wire, each pixel cell includes three sub-pixel units, horizontal storage electrode line is provided with pixel cell, one of three sub-pixel units are provided with the first longitudinal direction storage electrode line crisscross with described horizontal storage electrode line and second longitudinal direction storage electrode line, arrange at least one and detect hole between first longitudinal direction storage electrode line and second longitudinal direction storage electrode line.The present invention when storage electrode line is short-circuited, can quick and precisely check the position of storage electrode line short circuit by detection hole is arranged between first longitudinal direction storage electrode line and second longitudinal direction storage electrode line, repair storage electrode circuit defect, improve yield.
Description
Technical field
The present invention relates to a kind of liquid crystal of Liquid crystal disply device and its preparation method, more particularly to storage electrode line easily inspection
Showing device.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display, referred to as
TFT-LCD) with small volume, it is low in energy consumption, radiationless the features such as, obtained rapid development in recent years.With large scale, Gao Pin
Matter panel main flow increasingly, vertical orientation (VA, Vertical Alignment) type are shown with its wide angle of visibility, high-contrast and nothing
The advantages such as palpus friction matching, become the conventional display pattern of large size panel.VA shows that liquid crystal molecule vertical " standing " is imparted
VA very high front contrast, but when side is observed, contrast declines clearly, i.e., so-called " colour cast " phenomenon.For
Colour cast is solved the problems, such as, 8 domain structures are devised, 8 farmland VA need the network structure that a plurality of storage electrode CS lines are staggered to form, longitudinal direction to store
Electrode wires can couple formation load with ITO (pixel electrode), and the neighbouring pixel for making polarity different shows incorrect voltage, is
This load of elimination can place two opposite polarity longitudinal storage electrode lines in same pixel.Fig. 1 is existing one kind
VA pattern pixels and storage electrode line arrangement schematic diagram, in Fig. 1, each pixel cell is designed with horizontal storage electrode line, and such as first
Horizontal storage electrode line CS1 ', each pixel cell include three sub-pixel units, two are provided with one of three sub-pixels
Longitudinal storage electrode line, such as first longitudinal direction storage electrode line CS1, second longitudinal direction storage electrode line CS2, two adjacent longitudinal directions are deposited
Storing up electricity polar curve is just readily formed short circuit.As storage electrode line is network structure, once two in one of pixel are vertical
It is short-circuited to storage electrode line, in whole network, all storage electrode lines electrically adjacent with the storage electrode line of short circuit are in inspection
It is in bright line when looking into, it is impossible to find the position of short circuit, reduce product yield.
The content of the invention
It is an object of the invention to provide a kind of TFT-LCD array substrate and its manufacture method, when storage electrode line occurs
The position of storage electrode line short circuit when short-circuit, can be quick and precisely checked, storage electrode circuit defect is repaired, yield is improved.
The present invention proposes a kind of TFT-LCD array substrate, is handed over including the gate line and gate line being formed on substrate in length and breadth
Wrong data wire, several pixel cells limited by the gate line and data wire, each pixel cell include three sub- pictures
Plain unit, each sub-pixel unit include pixel electrode, thin film transistor (TFT), and described thin film transistor (TFT) includes being connected with gate line
Source electrode and the drain electrode being connected with pixel electrode that the grid that connects, semiconductor layer are connected with data wire, described pixel list
It is additionally provided with one of horizontal storage electrode line, three sub-pixel units and is provided with unit and is handed over described horizontal storage electrode line in length and breadth
Wrong first longitudinal direction storage electrode line and second longitudinal direction storage electrode line, wherein gate line and horizontal storage electrode line same layer shape
Into data wire, source electrode, drain electrode, first longitudinal direction storage electrode line and the second storage electrode line same layer are formed, and described laterally deposits
Storing up electricity polar curve is electrically connected with first longitudinal direction storage electrode line or second longitudinal direction storage electrode line, in first longitudinal direction storage electrode line
At least one is arranged between second longitudinal direction storage electrode line and detects hole, detection hole penetrates the shape that hole is detected to substrate surface
For rectangle, longer or wider than 3um, or circle is equal to, diameter of a circle is more than or equal to 3um.
The present invention also proposes the manufacture method of above-mentioned TFT-LCD array substrate, including,
Step 1, gate line and horizontal storage electrode line are prepared on the glass substrate；
Step 2, prepare gate insulator；
Step 3, preparation TFT semiconductor layers, the first etching barrier layer and the second etching barrier layer；
Step 4, prepare data wire, source electrode, drain electrode, first longitudinal direction storage electrode line and second longitudinal direction storage electrode line；
Step 5, the first contact hole of preparation and the second contact hole, in first longitudinal direction storage electrode line and second longitudinal direction storage electricity
2 detection holes are set between polar curve.
Step 6, prepare pixel electrode；
Pixel electrode is connected by the first contact hole with drain electrode, and horizontal storage electrode line and second longitudinal direction are deposited by the second contact hole
Storing up electricity polar curve is electrically connected with.
The present invention by detection hole is arranged between first longitudinal direction storage electrode line and second longitudinal direction storage electrode line, when depositing
When storing up electricity polar curve is short-circuited, storage electrode line CS and pixel electrode are electrically connected with, and pixel is in dim spot under white picture, line defect
Become point defect, then to point defect inspection, the pixel of storage electrode short circuit can be found out rapidly, be modified, the method can be quick
The position of storage electrode line short circuit is accurately checked, storage electrode circuit defect is repaired, yield is improved.
Description of the drawings
Fig. 1 is a kind of existing VA pattern pixels and storage electrode line arrangement schematic diagram；
Fig. 2 is a kind of schematic diagram of existing VA display picture elements framework；
Schematic diagrams of the Fig. 3 for present invention pixel structure；
Fig. 4 is the optical property schematic diagram for simulating liquid crystal in the present embodiment；
Liquid crystal molecule when Fig. 5 is 8V for optical analog embodiment of the present invention pixel voltage points to figure；
Fig. 6 A are the profile that Fig. 5 detects hole A-A ' positions；
Fig. 6 B are profiles of the Fig. 5 without detection hole B-B ' positions；
11, gate line in figure, 12, horizontal storage electrode line, 20, thin film transistor (TFT), 21, semiconductor layer, the 22, first etching
Barrier layer, the 23, second etching barrier layer, 31, data wire, 32, source electrode, 33, drain electrode, 34, first longitudinal direction storage electrode line, 35,
Second longitudinal direction storage electrode line, the 41, first contact hole, the 42, second contact hole, 43, detection hole, 51, pixel electrode.
Specific embodiment
Below in conjunction with the accompanying drawings and specific embodiment, further elucidate the present invention, it should be understood that these embodiments are merely to illustrate
The present invention rather than restriction the scope of the present invention, after the present invention has been read, those skilled in the art are each to the present invention's
The modification for planting the equivalent form of value falls within the application claims limited range.
Fig. 2 is a kind of schematic diagram of existing TFT-LCD array substrate pixel structure.The array base palte includes being formed in base
Gate line 11 on plate, and the crisscross data wire 31 of gate line 11, if limited by the gate line 11 and data wire 31
Dry pixel cell, each pixel cell include three sub-pixel units, and each sub-pixel unit includes pixel electrode 51, thin film
Transistor 20, described thin film transistor (TFT) 20 include grid, the semiconductor layer 21 being connected with gate line 11, with 31 phase of data wire
The source electrode 32 of connection and the drain electrode 33 being connected with pixel electrode 51, are additionally provided with laterally storage electricity in described sub-pixel unit
One of 12, three sub-pixel units of polar curve are provided with the first longitudinal direction storage electricity crisscross with described horizontal storage electrode line 12
Polar curve 34 and second longitudinal direction storage electrode line 35, wherein gate line 11 and 12 same layer of horizontal storage electrode line are formed, data wire
31st, source electrode 32, drain electrode 33, first longitudinal direction storage electrode line 34 and 35 same layer of the second storage electrode line are formed, and described is horizontal
Storage electrode line 12 is electrically connected with second longitudinal direction storage electrode line 35.Fig. 3 is present invention pixel structural representation, in such as Fig. 2
On the basis of shown existing array base palte pixel structure, the present invention is deposited in first longitudinal direction storage electrode line 34 and second longitudinal direction
Detection hole 43 is set between storing up electricity polar curve 35, and detection hole 43 is penetrated to substrate surface, the rectangle that is shaped as in hole 43 is detected, it is long or wide
More than or equal to 3um, the shape in hole 43 is detected or for circle, diameter of a circle is more than or equal to 3um.
The present invention also proposes the manufacture method of above-mentioned TFT-LCD array substrate, including,
Step 1, gate line 11 is prepared on the glass substrate and horizontal storage electrode line 12；
Step 2, prepare gate insulator；
Step 3, preparation TFT semiconductor layers, the first etching barrier layer 22 and the second etching barrier layer 23；
Step 4, prepare data wire 31, source electrode 32, drain electrode 33, first longitudinal direction storage electrode line 34 and second longitudinal direction storage electricity
Polar curve 35；
Step 5, the first contact hole 41 of preparation and the second contact hole 42, in first longitudinal direction storage electrode line 34 and second longitudinal direction
2 detection holes 43 are set between storage electrode line 35；
Step 6, prepare pixel electrode 51；
Pixel electrode 51 33 be connected by the first contact hole 41 with drain electrode, the second contact hole 42 by horizontal storage electrode line 12 and
Second longitudinal direction storage electrode line 35 is electrically connected with.
Fig. 4 is the optical property schematic diagram for simulating liquid crystal in the present embodiment.As shown in figure 4, pixel lower regions represent color
Ilm substrate orientation region, left and right region representation array base palte orientation region, four region ultraviolet light alignment directions are：It is lower 0 °, right
90 °, upper 180 °, left 270 °, the light alignment direction of such color membrane substrates and array base palte side is perpendicular, 89 ° of liquid crystal pretilt angle.Its
The parameter of middle optical analog is as follows：Organic insulating film JAS thickness is 2.3um, and etching angle is 45 °, and planarization is matched somebody with somebody using ultraviolet light
To, VA display patterns, it is 3.4um that liquid crystal cell is thick, and pixel voltage rises to 8 volts from 0 volt, and gradient is 4, and the time is risen to from 0ms
300ms, gradient are 100.
Test result indicate that as shown in the table：
| Transmitance Tr | 0V(0ms) | 8V(300ms) |
| Without detection hole (NOCH) | 0.01641% | 4.2758% |
| There is detection hole (CH) | 0.01642% | 4.1105% |
| (CH-NOCH)/NOCH | 0.07273 | - 3.866% |
During dark-state (0V, 1.01ms), there is pixel light transmission rate of the pixel ratio in detection hole without detection hole high by 0.07273%,
Illustrate that the former is than the latter's hardly light leak under dark-state；When pixel voltage is 8V, it is 4.2758% without light light transmittance at detection hole,
There is the light transmittance at detection hole to be 4.1105%, have pixel light transmission rate of the pixel ratio in detection hole without detection hole low by 3.866%,
Making under state the former clear has slight dark fringe, so after placing detection hole, under dark-state, pixel almost no light leak, has under on state of
Slight dark fringe, but it is overall little on optical property impact.
Liquid crystal molecule when Fig. 5 is 8V for optical analog embodiment of the present invention pixel voltage points to figure.Fig. 6 A are detected for Fig. 5
The profile of hole A-A ' positions, in A-A ' near the inclined standing of substrate-side liquid crystal on the slope in detection hole, in the middle of substrate
Into lying status, Fig. 6 B are profiles of the Fig. 5 without detection hole B-B ' positions to liquid crystal, and in B-B ', the liquid crystal of substrate-side is into vertical station
Vertical, the liquid crystal in the middle of substrate is in lying status.
When storage electrode line is short-circuited, storage electrode line CS is electrically connected with pixel electrode, and pixel is under white picture
Dim spot, line defect become point defect, then to point defect inspection, can find out rapidly the pixel of storage electrode short circuit, be modified.
The present invention by detection hole is arranged between first longitudinal direction storage electrode line and second longitudinal direction storage electrode line, when depositing
The position of storage electrode line short circuit when storing up electricity polar curve is short-circuited, can be quick and precisely checked, storage electrode circuit defect is repaired,
Improve yield.
Claims (8)
1.TFT-LCD array base paltes, including the crisscross data wire of the gate line and gate line being formed on substrate, by institute
Several pixel cells that gate line and data wire are limited are stated, each pixel cell includes three sub-pixel units, per height picture
Plain unit includes pixel electrode, thin film transistor (TFT), and described thin film transistor (TFT) includes grid, the quasiconductor being connected with gate line
Layer, the source electrode being connected with data wire and the drain electrode being connected with pixel electrode, are additionally provided with described pixel cell laterally
One of storage electrode line, three sub-pixel units are provided with the first longitudinal direction crisscross with described horizontal storage electrode line and deposit
Storing up electricity polar curve and second longitudinal direction storage electrode line, wherein gate line and horizontal storage electrode line same layer are formed, data wire, source
Pole, drain electrode, first longitudinal direction storage electrode line and second longitudinal direction storage electrode line same layer are formed, described horizontal storage electrode line
It is electrically connected with first longitudinal direction storage electrode line or second longitudinal direction storage electrode line, it is characterised in that：In first longitudinal direction storage electricity
At least one is arranged between polar curve and second longitudinal direction storage electrode line and detects hole.
2. TFT-LCD array substrate according to claim 1, it is characterised in that：Described detection hole is penetrated into substrate.
3. TFT-LCD array substrate according to claim 1, it is characterised in that：Described detection hole is rectangle, long or wide
More than or equal to 3 μm.
4. TFT-LCD array substrate according to claim 1, it is characterised in that：Described detection hole is circular, and round is straight
Footpath is more than or equal to 3 μm.
5. TFT-LCD array substrate according to claim 1, it is characterised in that：The number in described detection hole is 2.
6. the manufacture method of the TFT-LCD array substrate described in a kind of claim 1, it is characterised in that：Including,
Step 1, gate line and horizontal storage electrode line are prepared on the glass substrate；
Step 2, prepare gate insulator；
Step 3, preparation TFT semiconductor layers, the first etching barrier layer and the second etching barrier layer；
Step 4, prepare data wire, source electrode, drain electrode, first longitudinal direction storage electrode line and second longitudinal direction storage electrode line；
Step 5, the first contact hole of preparation and the second contact hole, in first longitudinal direction storage electrode line and second longitudinal direction storage electrode line
Between arrange 2 detection holes；
Step 6, prepare pixel electrode；
Pixel electrode is connected by the first contact hole with drain electrode, and the second contact hole will be horizontal storage electrode line electric with second longitudinal direction storage
Polar curve is electrically connected with.
7. the manufacture method of TFT-LCD array substrate according to claim 6, it is characterised in that：Described detection hole is
Rectangle, longer or wider than equal to 3 μm.
8. the manufacture method of TFT-LCD array substrate according to claim 6, it is characterised in that：Described detection hole is
Circle, diameter of a circle are more than or equal to 3 μm.
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| CN201410435994.XA CN104166289B (en) | 2014-08-29 | 2014-08-29 | TFT LCD arrays substrate and its manufacture method |
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| CN201410435994.XA CN104166289B (en) | 2014-08-29 | 2014-08-29 | TFT LCD arrays substrate and its manufacture method |
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| CN104166289B true CN104166289B (en) | 2017-03-29 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106328013B (en) * | 2016-09-28 | 2019-08-06 | 北京小米移动软件有限公司 | Electronic equipment |
| CN109949766B (en) * | 2017-12-21 | 2022-03-11 | 咸阳彩虹光电科技有限公司 | Pixel matrix driving method and display device |
| CN109949762B (en) * | 2017-12-21 | 2022-06-14 | 咸阳彩虹光电科技有限公司 | Pixel matrix driving method and display device |
| CN109949764B (en) * | 2017-12-21 | 2022-06-14 | 咸阳彩虹光电科技有限公司 | Pixel matrix driving method and display device |
| CN109949763B (en) * | 2017-12-21 | 2022-03-15 | 咸阳彩虹光电科技有限公司 | Pixel matrix driving method and display device |
| CN109949765B (en) * | 2017-12-21 | 2022-09-16 | 咸阳彩虹光电科技有限公司 | Pixel matrix driving method and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5847780A (en) * | 1992-06-01 | 1998-12-08 | Samsung Electronics Co., Ltd. | Liquid crystal display and a manufacturing method thereof |
| CN101140938A (en) * | 2006-09-07 | 2008-03-12 | 中华映管股份有限公司 | Thin-film transistor array substrates and method of producing the same |
| CN101241287A (en) * | 2008-03-07 | 2008-08-13 | 上海广电光电子有限公司 | Liquid crystal display device and array substrate rehabilitation method |
| CN101339340A (en) * | 2007-07-05 | 2009-01-07 | 瀚宇彩晶股份有限公司 | Liquid crystal display panel and its mending method |
-
2014
- 2014-08-29 CN CN201410435994.XA patent/CN104166289B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5847780A (en) * | 1992-06-01 | 1998-12-08 | Samsung Electronics Co., Ltd. | Liquid crystal display and a manufacturing method thereof |
| CN101140938A (en) * | 2006-09-07 | 2008-03-12 | 中华映管股份有限公司 | Thin-film transistor array substrates and method of producing the same |
| CN101339340A (en) * | 2007-07-05 | 2009-01-07 | 瀚宇彩晶股份有限公司 | Liquid crystal display panel and its mending method |
| CN101241287A (en) * | 2008-03-07 | 2008-08-13 | 上海广电光电子有限公司 | Liquid crystal display device and array substrate rehabilitation method |
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