CN101165904A - Pixel structure - Google Patents
Pixel structure Download PDFInfo
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- CN101165904A CN101165904A CNA2006101320290A CN200610132029A CN101165904A CN 101165904 A CN101165904 A CN 101165904A CN A2006101320290 A CNA2006101320290 A CN A2006101320290A CN 200610132029 A CN200610132029 A CN 200610132029A CN 101165904 A CN101165904 A CN 101165904A
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- drain electrode
- dot structure
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Abstract
The invention comprises: multi pixel regions defined by multi scan lines and multi signal lines; multi storage capacitor electrode lines; multi pixel electrodes; and multi thin film transistors. Wherein, setting up a second drain electrode for each thin film electrode; the second drain electrode and first drain electrode are set in symmetry. The first drain electrode is located at one side of the grid electrode and is connected to the pixel electrode; the second drain electrode and the first drain electrode are symmetrically located at the other side of the grid electrode, and are stacked and insulated with the pixel electrodes.
Description
Technical field
The present invention particularly provides a kind of dot structure that is applicable to LCD about a kind of LCD, the present invention can make can't regular event pixel can obtain normal shows signal and reach defect mending.
Background technology
(Thin Film Transistor-Liquid CrystalDisplay is a kind of flat-panel screens that is widely used most at present TFT-LCD) to Thin Film Transistor-LCD, and it has advantages such as low consumpting power, thin type light weight and low voltage drive.Usually, the liquid crystal of Thin Film Transistor-LCD is filled in colored filter (the color filter that a thin-film transistor display panel (panel) and that contains electrode contains electrode, CF) between the panel, and liquid crystal is controlled by the voltage that supplies to each electrode the penetrability of light.The image viewing area of thin-film transistor display panel is made up of many pixels of arranging with the matrix pattern.
In the production process of panel, pixel often is vulnerable to processing procedure and pollutes, as dust, oil stain, or electrostatic breakdown, make short circuit that thin-film transistor is unusual or open circuit, cause the point defect (pixel defect) of pixel, as bright spot (white defect), dim spot (dark defect) and bright spot (gray defect).
Fig. 1 is the partial pixel structural plan schematic diagram according to the liquid crystal indicator of prior art.As shown in fig. 1, utilize second metal level 120 that is connected with conductive pixel electrode 110, in the first metal layer of its underlay 130, the second metal levels 120 and overlapping but insulated from each other with holding wire 140.When if thin-film transistor can't operate as normal, then with laser with this 2 point (laser preparing zone A) short circuit, reach the repairing function.Yet this kind repairing method needs many metal levels of floating, and it can cause aperture opening ratio to reduce, and the accurate position of none fixed voltage, so the current potential that causes voltage signal on the data line to have influence on pixel easily causes the reduction of panel display quality.In addition, also may be because the relation of buildup of static electricity, in the first metal layer and the second metal level overlapping cause easily electrostatic breakdown or with same layer of adjacent short circuit metal, improve fraction defective on the contrary.And when pixel is repaired, need to use two points of laser bombardment to make its short circuit just can reach the purpose that pixel is repaired.And after the pixel reparation is finished, but the average voltage on the display data holding wire only visually is shown as GTG, still may be inspected out under complete black picture.
This method for repairing and mending needs laser radiation twice, and the formality complexity need expend more repairing time and cost.Therefore, product yield and the manufacturing cost that how to address the above problem promoting the liquid crystal indicator panel is very important.
Summary of the invention
Purpose of the present invention provides a kind of dot structure of LCD, and the signal source that provides of thin-film transistor of previous pixel is provided, make can't regular event pixel can obtain normal shows signal and reach defect mending.
Another object of the present invention provides a kind of pixel preparing structure of LCD, and utilizing pixel to repair design can't regular event when solving the film crystal tube failure and cause bright spot or dim spot, makes it have the ability that the normal pixel GTG shows.
Another purpose of the present invention provides a kind of pixel preparing structure of LCD, and this pixel is repaired in the black matrix district that is arranged at the pixel top, and can be used as light-shielding pattern does not influence aperture opening ratio.
A further object of the present invention provides a kind of pixel preparing structure of LCD, only need use laser bombardment once can finish repairing, and the brightness that pixel shows is identical with the top pixel fully to be not bright spot, under any display frame, all be difficult for checking, can significantly reduce the repairing time and improve the product yield.
In order to achieve the above object, one embodiment of the invention dot structure comprises: multi-strip scanning line and many signal line are arranged in a crossed manner on a substrate and define a plurality of pixel regions; A plurality of storage capacitors electrode wires are along the setting of multi-strip scanning line direction and across pixel region and arranged in a crossed manner with holding wire; A plurality of pixel electrodes are relatively arranged in arbitrary a plurality of pixel region; And a plurality of thin-film transistors, be provided with respectively on the multi-strip scanning line of a plurality of pixel regions.Wherein, arbitrary thin-film transistor comprises: a gate electrode; One source pole electrode and holding wire electrically connect; One first drain electrode is arranged at one of this gate electrode side and electrically connects with pixel electrode; And one second drain electrode, be symmetricly set in the opposite side of gate electrode with first drain electrode, wherein the pixel electrode part in second drain electrode and adjacent pixels district is overlapping and be electrically insulated from each other.
Another embodiment of the present invention dot structure method for repairing and mending, it is arranged in a crossed manner on a substrate and define a plurality of pixel regions to comprise the following steps: to form multi-strip scanning line and many signal line; Form many storage capacitors electrode wires along the scan-line direction setting and across pixel region and arranged in a crossed manner with holding wire; Form a plurality of pixel electrodes in arbitrary pixel region; And form a plurality of thin-film transistors on the scan line of pixel region.Wherein, arbitrary thin-film transistor comprises: a gate electrode; The one source pole electrode electrically connects with holding wire; One first drain electrode is arranged at one of gate electrode side and electrically connects with pixel electrode; And one second drain electrode, be symmetricly set in the opposite side of gate electrode with first drain electrode, wherein the pixel electrode part in second drain electrode and adjacent pixels district is overlapping and be electrically insulated from each other.Then, shine a laser, the pixel electrode in second drain electrode and adjacent pixels district is located the welding short circuit in overlapping.
By above-mentioned technical characterictic, the present invention only need use laser bombardment once can finish repairing, and the brightness that pixel shows is identical with the top pixel fully to be not bright spot, all is difficult for checking under any display frame, can significantly reduce the repairing time and improve the product yield.
Description of drawings
Fig. 1 is the partial pixel structural plan schematic diagram according to the liquid crystal indicator of prior art.
Fig. 2 is a dot structure floor map of the present invention.
Fig. 3 is the section enlarged diagram of B-B ' hatching line thin-film transistor among Fig. 2.
Fig. 4 is the floor map of dot structure method for repairing and mending of the present invention.
Fig. 5 is the section enlarged diagram of D-D ' hatching line thin-film transistor among Fig. 4.
Symbol description among the figure
10 substrates
20 the first metal layers
22 scan lines
22 ' gate electrode
24 storage capacitors electrode wires
30 first insulating barriers
32 second insulating barriers
34 semiconductor layers
40 thin-film transistors
42 holding wires
44 source electrodes
46 first drain electrodes
46 ' second drain electrode
48 contact holes
50 pixel electrodes
60 overlapping regions
110 pixel electrodes
120 second metal levels
130 the first metal layers
140 holding wires
Embodiment
Fig. 2 is a dot structure floor map of the present invention.As shown in Figure 2, in present embodiment, multi-strip scanning line 22 (scan line) is arranged on the substrate (not showing on the figure) with many signal line 42.Scan line 22 and the holding wire 42 a plurality of pixel regions (pixelregion) that define arranged in a crossed manner.Many storage capacitors electrode wires 24 is passed holding wire 42 along scan line 22 direction settings across pixel region and intersection.A plurality of pixel electrodes 50 (pixel electrode) are arranged at respectively in arbitrary pixel region.A plurality of thin-film transistors 40 are arranged at respectively on the scan line 22 of each pixel region.Wherein, arbitrary thin-film transistor 40 comprises a gate electrode (gate electrode) (not showing on the figure); One source pole electrode 44 (source electrode); One first drain electrode 46 (drainelectrode); And one second drain electrode 46 '.Gate electrode and scan line 22 electrically connect; Source electrode 44 electrically connects with holding wire 42; First drain electrode 46 electrically connects with pixel electrode 50.Wherein, include gate electrode in the scan line 22, second drain electrode 46 ' and first drain electrode 46 are symmetricly set in the opposite side of gate electrode, and second drain electrode 46 ' pixel electrode in the thin-film transistor 40 neighbor districts 50 is partly overlapping but be electrically insulated from each other therewith.
The above-mentioned explanation that continues, one first insulating barrier (not showing on the figure) is arranged on the substrate and is covered in gate electrode.Thin-film transistor 40 comprises that more semi-conductor layer 34 is arranged between first insulating barrier and source electrode 44, first drain electrode 46 and second drain electrode 46 '.In addition, the setting of one second insulating barrier (not showing on the figure) is covered on the source electrode 44 and first drain electrode 46, and 46 of first drain electrodes are to utilize a contact hole 48 (contacthole) and pixel electrode 50 electric connections on second insulating barrier.Second drain electrode 46 ' utilizes second insulating barrier to make with pixel electrode 50 and is electrically insulated from each other.
In the foregoing description, the material of scan line 22, holding wire 42, storage capacitors electrode wires 24, gate electrode, source electrode 44, first drain electrode 46 and second drain electrode 46 ' comprises aluminium, copper, gold, chromium, tantalum, titanium, manganese, nickel, silver or its combination.The material of pixel electrode 50 comprises indium tin oxide or indium-zinc oxide.The material of first insulating barrier and second insulating barrier comprises silica or silicon nitride.In present embodiment, scan line 22 is formed by a first metal layer 20 with storage capacitors electrode wires 24, and the material of its first metal layer comprises aluminium, copper, gold, chromium, tantalum, titanium, manganese, nickel, silver or its combination.Holding wire 42, source electrode 44, first drain electrode 46 and second drain electrode 46 ' are formed by one second metal level 40, and the material of its second metal level comprises aluminium, copper, gold, chromium, tantalum, titanium, manganese, nickel, silver or its combination.
As shown in Figure 2, in present embodiment, if the film crystal tube failure in lower pixel district can't regular event the time, can utilize laser with second drain electrode, 46 ' the welding short circuit in pixel electrode 50 and its top pixel region thin-film transistor.This moment second, drain electrode 46 ' can form a standby thin-film transistor (backup TFT) with source electrode 44.Shows signal can be sent in the pixel that originally can't operate by this thin-film transistor, and just a shows signal is controlled two pixels simultaneously.
Fig. 3 is the section enlarged diagram according to B-B ' hatching line thin-film transistor among Fig. 2.As shown in Figure 3, in present embodiment, a gate electrode 22 ' is arranged on the substrate 10, is contained in scan line in this gate electrode 22 '.The material of this substrate 10 comprises glass.One first insulating barrier 30 is covered on gate electrode 22 ' and the substrate 10.Semi-conductor layer 34 is arranged on first insulating barrier, 30 surfaces on the gate electrode 22 '.One source pole electrode 44, one first drain electrode 46 and one second drain electrode 46 ' are arranged on the semiconductor layer 34.Wherein, first drain electrode 46 and second drain electrode 46 ' are symmetrical arranged.One second insulating barrier 32 is provided with and covers source electrode 44, first drain electrode 46 and second drain electrode 46 '.Wherein, the setting of overlapping of the pixel electrode 50 of a pixel region and first drain electrode 46 electrically connects first drain electrode 46 and pixel electrode 50 by the contact hole 48 on second insulating barrier 32.Settings of overlapping of second drain electrode 46 ' and the pixel electrode 50 in neighbor district so utilizes second insulating barrier 32 that second drain electrode 46 ' and pixel electrode 50 are electrically insulated from each other.
See also Fig. 4 and Fig. 5, in the time need repairing, can shine a laser bombardment welding short circuit is carried out in the overlapping region 60 of the pixel electrode 50 and second drain electrode 46 ' as above-mentioned dot structure.This moment second, drain electrode 46 ' can form a standby thin-film transistor (backup TFT) with source electrode 44.
According to above-mentioned, one of feature of the present invention, though second drain electrode is (floating) setting and overlapping with gate electrode of floating, yet gate electrode only just has the variation of voltage when pixel is opened, therefore second drain electrode can maintain fixed potential for a long time, does not have the problem of the accurate position of effect of signals pixel voltage.In addition, if second drain electrode has short circuit problem or electrostatic breakdown,,, can not cause demonstration bad so second drain electrode electrically connects with pixel electrode because it is without laser preparing.
Comprehensively above-mentioned, the present invention is by means of the signal source that provides of the thin-film transistor of previous pixel, make can't regular event pixel can obtain normal shows signal and reach defect mending.Utilizing pixel to repair design can't regular event when solving the film crystal tube failure and cause bright spot or dim spot, makes it have the ability that the normal pixel GTG shows, can't regular event in the time of can effectively solving the film crystal tube failure and cause bright spot or dim spot.This pixel is repaired in the black matrix district that is arranged at the pixel top, and can be used as light-shielding pattern does not influence aperture opening ratio.The present invention only need use laser bombardment once can finish repairing, and the brightness that shows of pixel identical with the top pixel fully be not bright spot, under any display frame, all be difficult for checking, can significantly reduce repairing time and raising product yield.
Above-described embodiment only is explanation technological thought of the present invention and characteristics, its purpose makes the personage who has the knack of this skill can understand content of the present invention and is implementing according to this, when can not with qualification claim of the present invention, promptly the equalization of doing according to disclosed spirit generally changes or modifies, and must be encompassed in the claim of the present invention.
Claims (9)
1. dot structure comprises:
Multi-strip scanning line and many signal line, arranged in a crossed manner on a substrate and define a plurality of pixel regions;
Many storage capacitors electrode wires, along these scan-line directions settings and across these pixel regions, and arranged in a crossed manner with these holding wires;
A plurality of pixel electrodes are relatively arranged in arbitrary these pixel regions; And
A plurality of thin-film transistors are provided with respectively on these scan lines of these pixel regions, and wherein arbitrary these thin-film transistors comprise:
One gate electrode;
The one source pole electrode electrically connects with this holding wire;
One first drain electrode is arranged at one of this gate electrode side and electrically connects with this pixel electrode; And
One second drain electrode is symmetricly set in the opposite side of this gate electrode with this first drain electrode, and wherein this pixel electrode part in this second drain electrode and adjacent pixels district is overlapping and be electrically insulated from each other.
2. dot structure as claimed in claim 1 wherein more comprises one first insulating barrier and is arranged on this substrate and covers this gate electrode.
3. dot structure as claimed in claim 2, wherein this thin-film transistor more comprises between this first insulating barrier and this source electrode, this first drain electrode and this second drain electrode that semi-conductor layer is arranged at this gate electrode top.
4. dot structure as claimed in claim 2, wherein the material of this first insulating barrier comprises silica or silicon nitride.
5. dot structure as claimed in claim 1 wherein more comprises one second insulating barrier and is covered on this source electrode and this first drain electrode.
6. dot structure as claimed in claim 5, wherein this first drain electrode electrically connects with the contact hole on this second insulating barrier and this pixel electrode.
7. dot structure as claimed in claim 5, wherein this pixel electrode of this second drain electrode and adjacent this pixel region of this thin-film transistor utilizes this second insulating barrier to make to be electrically insulated from each other.
8. dot structure as claimed in claim 1, wherein the material of these scan lines, these holding wires, these storage capacitors electrode wires, this gate electrode, this source electrode, this first drain electrode and this second drain electrode comprises aluminium, copper, gold, chromium, tantalum, titanium, manganese, nickel, silver or aforementioned the combination.
9. dot structure as claimed in claim 1, wherein the material of these pixel electrodes comprises indium tin oxide or indium-zinc oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101320290A CN100557805C (en) | 2006-10-19 | 2006-10-19 | Dot structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101320290A CN100557805C (en) | 2006-10-19 | 2006-10-19 | Dot structure |
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| Publication Number | Publication Date |
|---|---|
| CN101165904A true CN101165904A (en) | 2008-04-23 |
| CN100557805C CN100557805C (en) | 2009-11-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006101320290A Expired - Fee Related CN100557805C (en) | 2006-10-19 | 2006-10-19 | Dot structure |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103048816A (en) * | 2013-01-18 | 2013-04-17 | 深圳市华星光电技术有限公司 | Method for repairing bright spots of liquid crystal display panels |
| CN103247245A (en) * | 2012-02-03 | 2013-08-14 | 元太科技工业股份有限公司 | Display panel circuit structure |
| WO2014205892A1 (en) * | 2013-06-28 | 2014-12-31 | 京东方科技集团股份有限公司 | Pixel unit, array substrate and manufacturing and repairing method therefor, and display device |
| CN104409462A (en) * | 2014-12-18 | 2015-03-11 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| US8986062B2 (en) | 2013-01-18 | 2015-03-24 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method for repairing white defect of liquid crystal display panel |
| CN107515500A (en) * | 2017-09-20 | 2017-12-26 | 深圳市华星光电技术有限公司 | Array base palte, display panel and pixel method for repairing and mending |
| WO2018176462A1 (en) * | 2017-04-01 | 2018-10-04 | Boe Technology Group Co., Ltd. | Liquid crystal array substrate, liquid crystal display panel, and liquid crystal display apparatus |
| US10158005B2 (en) | 2008-11-07 | 2018-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2006
- 2006-10-19 CN CNB2006101320290A patent/CN100557805C/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10158005B2 (en) | 2008-11-07 | 2018-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN103247245A (en) * | 2012-02-03 | 2013-08-14 | 元太科技工业股份有限公司 | Display panel circuit structure |
| CN103247245B (en) * | 2012-02-03 | 2015-12-16 | 元太科技工业股份有限公司 | display panel circuit structure |
| WO2014110841A1 (en) * | 2013-01-18 | 2014-07-24 | 深圳市华星光电技术有限公司 | Method for fixing white defects on liquid crystal display panel |
| CN103048816A (en) * | 2013-01-18 | 2013-04-17 | 深圳市华星光电技术有限公司 | Method for repairing bright spots of liquid crystal display panels |
| US8986062B2 (en) | 2013-01-18 | 2015-03-24 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method for repairing white defect of liquid crystal display panel |
| CN103048816B (en) * | 2013-01-18 | 2015-04-01 | 深圳市华星光电技术有限公司 | Method for repairing bright spots of liquid crystal display panels |
| WO2014205892A1 (en) * | 2013-06-28 | 2014-12-31 | 京东方科技集团股份有限公司 | Pixel unit, array substrate and manufacturing and repairing method therefor, and display device |
| US9366926B2 (en) | 2013-06-28 | 2016-06-14 | Beijing Boe Display Technology Co., Ltd. | Pixel unit, array substrate, method for manufacturing array substrate, method for repairing array substrate, and display device |
| CN104409462A (en) * | 2014-12-18 | 2015-03-11 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| CN104409462B (en) * | 2014-12-18 | 2017-07-04 | 京东方科技集团股份有限公司 | Array base palte and its manufacture method, display device |
| US9905583B2 (en) | 2014-12-18 | 2018-02-27 | Boe Technology Group Co., Ltd. | Array substrate having scanning line and signal lines in exchanged layers for manufacturing display apparatus |
| WO2016095639A1 (en) * | 2014-12-18 | 2016-06-23 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method therefor, and display device |
| WO2018176462A1 (en) * | 2017-04-01 | 2018-10-04 | Boe Technology Group Co., Ltd. | Liquid crystal array substrate, liquid crystal display panel, and liquid crystal display apparatus |
| US10444573B2 (en) | 2017-04-01 | 2019-10-15 | Boe Technology Group Co., Ltd. | Liquid crystal array substrate, liquid crystal display panel, and liquid crystal display apparatus |
| CN107515500A (en) * | 2017-09-20 | 2017-12-26 | 深圳市华星光电技术有限公司 | Array base palte, display panel and pixel method for repairing and mending |
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| Publication number | Publication date |
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| CN100557805C (en) | 2009-11-04 |
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