CN101239785B - Large screen thin film transistor die set thinning liquid and producing method thereof - Google Patents
Large screen thin film transistor die set thinning liquid and producing method thereof Download PDFInfo
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- CN101239785B CN101239785B CN2008100207783A CN200810020778A CN101239785B CN 101239785 B CN101239785 B CN 101239785B CN 2008100207783 A CN2008100207783 A CN 2008100207783A CN 200810020778 A CN200810020778 A CN 200810020778A CN 101239785 B CN101239785 B CN 101239785B
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- Prior art keywords
- earth oxide
- rare earth
- suspension
- film transistor
- reducer
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- 239000007788 liquid Substances 0.000 title claims abstract description 12
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title abstract 5
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 54
- 229920000620 organic polymer Polymers 0.000 claims abstract description 9
- 150000007524 organic acids Chemical class 0.000 claims abstract description 8
- 239000000725 suspension Substances 0.000 claims description 38
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 20
- 238000002156 mixing Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 8
- 230000000996 additive effect Effects 0.000 claims description 8
- -1 silicon aluminate Chemical class 0.000 claims description 6
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 5
- 229920002125 Sokalan® Polymers 0.000 claims description 5
- 150000001412 amines Chemical class 0.000 claims description 5
- 239000004584 polyacrylic acid Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 2
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims 1
- 239000003638 chemical reducing agent Substances 0.000 abstract description 19
- 239000011521 glass Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 20
- 235000019353 potassium silicate Nutrition 0.000 description 13
- 239000004111 Potassium silicate Substances 0.000 description 12
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 12
- 229910052913 potassium silicate Inorganic materials 0.000 description 12
- 238000003756 stirring Methods 0.000 description 11
- 150000003014 phosphoric acid esters Chemical class 0.000 description 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 238000005303 weighing Methods 0.000 description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 5
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Soil Conditioners And Soil-Stabilizing Materials (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The present invention provides a big screen thin-film transistor module group reducer and the producing method thereof, relates to a producing technique of a chemical industry product, especially to a producing technique field of the reducer for processing the glass. The polysilicate is added into the rare-earth oxide suspending liquid, and the pH of the mixed suspending liquid of the rare-earth oxide and the polysilicate to 5-8; the temperature of the mixed suspending liquid of the rare-earth oxide and the polysilicate is elevated to 20-90 DEG C, after temperature preserving the temperature is reduced to 15-25 DEG C, the non-ionic water-soluble organic polymer and organic acid are added, and the pH value of the mixed suspending liquid to 5-8. The reducer of the invention has the advantages of simple technique, easy operation, better suspending property of the product, no easy deposition, excellent dispersing stability, stable thickness-reducing effect, low surface defect, no scratch in attenuating, effective increasing the efficiency of the flattening and attenuating, attenuating efficiency up to 699 nano/minute and no easy damage to the reducing machine when the big screen thin-film transistor module group is processed.
Description
Technical field
The present invention relates to a kind of production process of chemical product, especially for the production technical field of the reducer of processed glass.
Background technology
Employed reducer was mainly done the attenuate friction agent with the large particle rare-earth oxide powder during current large screen thin film transistor (TFT) module processing enterprise produced, overall attenuate speed is low, dispersion stabilization is poor, causes serious surface tear easily, also has defectives such as graduation attenuate efficient is low.Long-time attenuate often reduces attenuate efficient greatly, causes the rapid wearing of attenuate machine, and production efficiency is low, and the consumption of a large amount of consumptive materials.
Summary of the invention
The object of the invention is to invent that a kind of dispersion stabilization is good, graduation attenuate efficient height, do not damage large screen thin film transistor (TFT) die set thinning liquid of attenuate machine.
Effective ingredient of the present invention is rare earth oxide, molecular weight less than the water-soluble organic polymer of 500 nonionic, molecular weight less than 200 poly silicate and organic acid, and the pH value of reducer is 5～8.
Product suspension of the present invention is strong, should not deposit, dispersion stabilization is good, large screen thin film transistor (TFT) module is being added man-hour, the attenuate effect stability, surface imperfection is low, the attenuate no marking, can effectively improve graduation attenuate efficient, attenuate efficient can reach 699 nm/minute, and is difficult for causing the damage to the attenuate machine.
Second purpose of the present invention also is to provide a kind of feasible production method for above-mentioned large screen thin film transistor (TFT) die set thinning liquid.
May further comprise the steps:
1) rare earth oxide particles is dispersed in the water, makes rare earth oxide suspension;
2) poly silicate is added in the suspension, make the mixing suspension of rare earth oxide, poly silicate;
3) the suspension mixed pH of adjustment rare earth oxide, poly silicate is 5～8;
4) mixing suspension with rare earth oxide, poly silicate is warming up to 20～90 ℃, be incubated and be cooled to 10～25 ℃ after 0.1～6 hour, add water-soluble organic polymer of nonionic and organic acid, suspension mixed pH value to 5～8 of re-adjustment rare earth oxide, poly silicate; Wherein, the mass ratio of the water-soluble organic polymer of nonionic of rare earth oxide and adding is 1: 0.002～0.2, and the organic acid mass ratio of rare earth oxide and adding is 1: 0.002～0.2.
Technology of the present invention is simple, easy handling, convenient production, production efficiency height, constant product quality.
Among the present invention, rare earth oxide accounts for 0.001%～50% of reducer gross weight, 0.001%～50% poly silicate that the water-soluble organic polymer of nonionic accounts for the gross weight of reducer account for reducer gross weight 0.01%～50%, organic acid account for reducer gross weight 0.001%～20%.
The mass ratio of step 1) middle-weight rare earths oxide compound and water is 1: 3～30.
Step 2) mass ratio of middle-weight rare earths oxide compound and poly silicate is 1: 0.1～20.
In addition, in the aforementioned production method, after the step 4), can be again add additive to the mixing suspension of rare earth oxide, poly silicate, described additive is organophosphate or organic amine or hydramine or polyacrylic acid or urethane or inorganic soluble silicon aluminate, adding the purpose of stating additive is to improve the rheological of reducer, can make the higher reducer of suspension.
The mass ratio of rare earth oxide and described additive is 1: 0.001～0.1.
Embodiment
Embodiment one:
1, preparation method:
Take by weighing 750 gram rare earth oxides, add in the 4517 gram water, stir under the room temperature, make rare earth oxide suspension.Add the poly silicate of 500 gram mol ratios 2.1 (as water glass Na to rare earth oxide suspension
2O.nSiO
2Or K
2O.nSiO
2), stir evenly, make rare earth oxide, poly silicate mixing suspension.Adopt phosphorus acid for adjusting pH value to 8.
Rare earth oxide, poly silicate mix suspending liquid temp are risen to 20～90 ℃, be incubated and be cooled to 10～25 ℃ after 0.1～6 hour, adopt phosphoric acid that pH is transferred to 8 again.
In order to make the higher reducer of suspension property, also can be again add 200 grams to rare earth oxide, the poly silicate mixing suspension of pH=8,400 grams, the water-soluble organic polymer of nonionic of 500 grams is as organic phosphoric acid ester or organic amine or hydramine or poly-ring ethoxy alkane or polyacrylic acid or urethane.Add oxalic acid or other organic acid 100 grams again, and the pH value is transferred to 7.
2, application example:
With made sample attenuate on Logitech CDP thinning single surface machine.Press down: 1psi, lower wall and load plate rotating speed 50RPM, reducer flow velocity: 100ml/ minute.This series reducer attenuate speed is respectively 450,720,655, nm/minute, glass surface no marking, attenuate machine not damaged.
Embodiment two:
1, preparation method:
Take by weighing 350 gram rare earth oxides, add in the 3984 gram water, stir under the room temperature, make rare earth oxide suspension.Potassium silicate to rare earth oxide suspension adding 666 gram mol ratios 2.1 further stirs evenly, and makes rare earth oxide, potassium silicate mixing suspension.Adjusting pH with hydrochloric acid again is 8～12.
Rare earth oxide, the suspension mixed temperature of potassium silicate are risen to 60 ℃, be cooled to again after being incubated 2 hours ± 0.2 hour
25℃, add the 300 water-soluble organic polymers of nonionic that restrain, as organic phosphoric acid ester or organic amine or hydramine or poly-ring ethoxy alkane or polyacrylic acid or urethane.Add phthalic acid 10,30 again, 50 grams, and 1 gram octane polyethylene oxide phosphoric acid ester.With hydrochloric acid adjust pH to 7.
2, application example:
With made sample attenuate on Logitech CDP thinning single surface machine.Press down: 1psi, lower wall and load plate rotating speed 50RPM, reducer flow velocity: 100ml/ minute.This reducer attenuate speed is 526,821,649 nm/minute, glass surface no marking, attenuate machine not damaged.
Embodiment three:
1, preparation method
A: take by weighing 0.10 gram rare earth oxide, add in the 4933 gram water, stir under the room temperature, make rare earth oxide suspension.Potassium silicate to rare earth oxide suspension adding 100 gram mol ratios 2.1 further stirs evenly, and makes rare earth oxide, potassium silicate mixing suspension.Adjusting pH with hydrochloric acid again is 8.
Rare earth oxide, the suspension mixed temperature of potassium silicate are risen to 60 ℃, be cooled to again after being incubated 2 hours ± 0.2 hour
25℃, adopt hydrochloric acid adjust pH to 8 again.
B: take by weighing 2500 gram rare earth oxides, add in the 1167 gram water, stir under the room temperature, make rare earth oxide suspension.Potassium silicate to rare earth oxide suspension adding 1333 gram mol ratios 2.1 further stirs evenly, and makes rare earth oxide, potassium silicate mixing suspension.Adjust pH 12 with hydrochloric acid again.
Rare earth oxide, the suspension mixed temperature of potassium silicate are risen to 60 ℃, be cooled to again after being incubated 2 hours ± 0.2 hour
25℃, adopt hydrochloric acid adjust pH to 5 again.Take by weighing the above synthetic suspension of 200 grams, add 1800 gram water, stir, add the additive of 200 grams again, as organic phosphoric acid salt or organic amine or hydramine or poly-ring ethoxy alkane or polyacrylic acid or urethane or inorganic soluble silicon aluminate.Add para-amino benzoic acid 30 grams again, and 1 gram octane polyethylene oxide phosphoric acid ester.With hydrochloric acid adjust pH to 5.
C: take by weighing 350 gram rare earth oxides, add in the 2850 gram water, stir under the room temperature, make rare earth oxide suspension.Potassium silicate to rare earth oxide suspension adding 2500 gram mol ratios 2.1 further stirs evenly, and makes rare earth oxide, potassium silicate mixing suspension.Adjusting pH with hydrochloric acid again is 8～12.
Rare earth oxide, the suspension mixed temperature of potassium silicate are risen to 60 ℃, be cooled to again after being incubated 2 hours ± 0.2 hour
25℃, adopt hydrochloric acid adjust pH to 6. to add citric acid 30 grams more again, and 1 gram decane polyethylene oxide phosphoric acid ester.With hydrochloric acid adjust pH to 6.
2, application example:
With made sample attenuate on Logitech CDP thinning single surface machine.Press down: 1psi, lower wall and load plate rotating speed 50RPM, reducer flow velocity: 100ml/ minute.This series reducer attenuate speed is respectively and is A:411, B:935 (the polishing fluid polishing speed that adds benzaminic acid and octane polyethylene oxide phosphoric acid ester improves greatly), the C:823 nm/minute (adds citric acid, the polishing fluid polishing speed of decane polyethylene oxide phosphoric acid ester improves, and surfaceness reduces, surface brightness strengthens), glass surface no marking, attenuate machine not damaged.
Claims (3)
1. the production method of a large screen thin film transistor die set thinning liquid is characterized in that may further comprise the steps:
1) rare earth oxide particles is dispersed in the water, the mass ratio of described rare earth oxide and water is 1: 3～30, makes rare earth oxide suspension;
2) molecular weight is added in the suspension less than 200 poly silicate, the mass ratio of described rare earth oxide and poly silicate is 1: 0.1～20, makes the mixing suspension of rare earth oxide, poly silicate;
3) the suspension mixed pH of adjustment rare earth oxide, poly silicate is 5～8;
4) mixing suspension with rare earth oxide, poly silicate is warming up to 20～90 ℃, be incubated and be cooled to 10～25 ℃ after 0.1～6 hour, add molecular weight less than water-soluble organic polymer of 500 nonionic and organic acid, suspension mixed pH value to 5～8 of re-adjustment rare earth oxide, poly silicate; Wherein, the mass ratio of the water-soluble organic polymer of nonionic of rare earth oxide and adding is 1: 0.002～0.2, and the organic acid mass ratio of rare earth oxide and adding is 1: 0.002～0.2.
2. according to the production method of the described large screen thin film transistor die set thinning liquid of claim 1, after it is characterized in that step 4), mixing suspension to rare earth oxide, poly silicate adds additive again, and described additive is organophosphate or organic amine or hydramine or polyacrylic acid or urethane or inorganic soluble silicon aluminate.
3. according to the production method of the described large screen thin film transistor die set thinning liquid of claim 2, the mass ratio that it is characterized in that rare earth oxide and described additive is 1: 0.001～0.1.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100207783A CN101239785B (en) | 2008-02-26 | 2008-02-26 | Large screen thin film transistor die set thinning liquid and producing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100207783A CN101239785B (en) | 2008-02-26 | 2008-02-26 | Large screen thin film transistor die set thinning liquid and producing method thereof |
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| Publication Number | Publication Date |
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| CN101239785A CN101239785A (en) | 2008-08-13 |
| CN101239785B true CN101239785B (en) | 2010-11-17 |
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|---|---|---|---|
| CN2008100207783A Active CN101239785B (en) | 2008-02-26 | 2008-02-26 | Large screen thin film transistor die set thinning liquid and producing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102627916B (en) * | 2012-03-23 | 2014-09-03 | 江苏中晶科技有限公司 | Glass polishing solution with reinforcement function |
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|---|---|---|---|---|
| US4226623A (en) * | 1979-02-19 | 1980-10-07 | Fujimi Kenmazai Kogyo Co., Ltd. | Method for polishing a single crystal or gadolinium gallium garnet |
| CN1288920A (en) * | 1999-09-21 | 2001-03-28 | 不二见株式会社 | Polishing composition |
| CN1748009A (en) * | 2003-02-11 | 2006-03-15 | 卡伯特微电子公司 | Mixed-abrasive polishing composition and method for using the same |
| CN1903962A (en) * | 2006-08-14 | 2007-01-31 | 北京蓝景创新科技有限公司 | Preparation method of super fine precision polishing powder using ceriumdioxide as main body and polishing powder |
| CN1919949A (en) * | 2006-08-23 | 2007-02-28 | 孙韬 | High precision composite polishing liquid, preparation method and use thereof |
| CN1919950A (en) * | 2006-08-23 | 2007-02-28 | 孙韬 | High precision polishing liquid, preparation method and use thereof |
-
2008
- 2008-02-26 CN CN2008100207783A patent/CN101239785B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226623A (en) * | 1979-02-19 | 1980-10-07 | Fujimi Kenmazai Kogyo Co., Ltd. | Method for polishing a single crystal or gadolinium gallium garnet |
| CN1288920A (en) * | 1999-09-21 | 2001-03-28 | 不二见株式会社 | Polishing composition |
| CN1748009A (en) * | 2003-02-11 | 2006-03-15 | 卡伯特微电子公司 | Mixed-abrasive polishing composition and method for using the same |
| CN1903962A (en) * | 2006-08-14 | 2007-01-31 | 北京蓝景创新科技有限公司 | Preparation method of super fine precision polishing powder using ceriumdioxide as main body and polishing powder |
| CN1919949A (en) * | 2006-08-23 | 2007-02-28 | 孙韬 | High precision composite polishing liquid, preparation method and use thereof |
| CN1919950A (en) * | 2006-08-23 | 2007-02-28 | 孙韬 | High precision polishing liquid, preparation method and use thereof |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2000-8025A 2000.01.11 |
| JP特开2005-239546A 2005.09.08 |
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