CN101233434A - Laminated body for reflection film - Google Patents
Laminated body for reflection film Download PDFInfo
- Publication number
- CN101233434A CN101233434A CNA2006800277249A CN200680027724A CN101233434A CN 101233434 A CN101233434 A CN 101233434A CN A2006800277249 A CNA2006800277249 A CN A2006800277249A CN 200680027724 A CN200680027724 A CN 200680027724A CN 101233434 A CN101233434 A CN 101233434A
- Authority
- CN
- China
- Prior art keywords
- film
- refractive index
- aforementioned
- duplexer
- driving fit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Optical Elements Other Than Lenses (AREA)
Abstract
Provided is a laminated body having a high reflectance over an entire visible light region and excellent resistances such as moisture resistance and salt water resistance. In the laminated body, a silver film, adhesion improving film, a low refractive index film and a high refractive index film are successively laminated on a substrate. The laminated body is characterized in that at least a layer on the adhesion improving film side in the low refractive index film is formed by a high frequency sputtering method wherein an oxide target and a sputter gas containing nitrogen are used, the adhesion improving film has an extinction coefficient of 0.1 or less and a film thickness of 0.5-4nm, the low refractive index film has an extinction coefficient of 0.01 or less, and the high refractive index film has an extinction coefficient of 0.01 or less.
Description
Technical field
The present invention relates to mainly to be used to the duplexer of the reflecting member of projection TV set.
Background technology
At present, the mirror that metal film is used to reflect is widely used as the employed catoptrons of electronic equipment such as display screen.Save for the brightness raising and the energy consumption of electronic equipment, importantly improve the reflectivity of catoptron.For example, adopt the mirror that makes reflection backlight in the employed LCD such as mobile phone, but this mirror adopts for lightweight film as substrate, and need the high catoptron of reflectivity.In addition, the screen projects images to as big picture such as projection TV set needs the polylith catoptron in the optical system, so light quantity descends with the increase of order of reflection.Consequently, the light quantity that has a final gained diminishes and problem that the brightness of picture descends, needs the higher in the past catoptron of luminance factor.
All the time, the material of metal film adopts aluminium.But.The material of metal film adopts under the situation of aluminium, and reflectivity changes according to the incident angle of light, produces the problem that deviation appears in reflected colour.
In order to address the above problem, adopted the method for the silver that the luminance factor aluminium of visible region is high as the material of metal film.But, though silver at the luminance factor aluminium height of visible region, permanance such as moisture-proof and resistance to salt water are low, and film strength also a little less than, poor with the adaptation of substrate, therefore have the problem of damage easily.
As adopt the Ag film as metal film have high reflectance and a good mirror of permanance, disclose to have and on glass substrate, stack gradually Al
2O
3Film, Ag film, Al
2O
3Film, TiO
2The duplexer that film forms (for example with reference to patent documentation 1).But this duplexer is owing to the Al at the substrate opposition side of making the Ag film
2O
3Import oxygen during film, therefore have oxidized easily and the problem that reflectivity reduces of silver.
In addition, also announcement has for the adaptation of improving Ag film and substrate the reflectance coating (for example with reference to patent documentation 2) of metals such as mixed C e, Nd in Ag.Therefore but this reflectance coating is owing to be the monofilm of silver, only relevant for the record of the adaptation of Ag film and substrate, fully not about the evaluation of the adaptation of Ag film and other layer.
In addition, disclose to have on the Ag film and form Al
2O
3Film, ZrO
2Film, SiO
2The catoptron that film forms (for example with reference to patent documentation 3).Put down in writing Al in the document
2O
3Film is the diaphragm that is used to improve the permanance of Ag, ZrO
2Film is the film that is used to improve reflection efficiency, SiO
2Film is the technology contents of diaphragm.In addition, announcement has the technical scheme (for example with reference to patent documentation 4) that forms the film that is formed by chromium oxide for the adaptation that makes substrate and Ag film improves between substrate and Ag film.In addition, record on the Ag film and form Al
2O
3Film, and the technical scheme (for example with reference to patent documentation 5) of the layer of zirconia, silicon dioxide, titanium dioxide, hafnia, tin oxide, antimony oxide, tungsten oxide etc. is set in order further to improve permanance.In addition, announcement has in order to improve permanance the technical scheme (for example with reference to patent documentation 6) that the basilar memebrane that is formed by monox is set between substrate and Ag film.But there is the low problem of the reflectivity of visible region in these reflectance coatings.
Patent documentation 1: the Jap.P. spy opens the 2003-4919 communique
Patent documentation 2: the Jap.P. spy opens the 2002-226927 communique
Patent documentation 3: Japanese patent laid-open 5-127004 communique
Patent documentation 4: the Jap.P. spy opens the 2000-81505 communique
Patent documentation 5: the Jap.P. spy opens the 2000-241612 communique
Patent documentation 6: the Jap.P. spy opens the 2001-74922 communique
The announcement of invention
The object of the present invention is to provide in whole visible region and have high reflectance, permanance and the good duplexers of adaptation such as moisture-proof and resistance to salt water.
The present invention has formation as follows.
(1) duplexer, it is to stack gradually the duplexer that silverskin, driving fit improve film, low refractive index film, high refractive index film on substrate, it is characterized in that, driving fit at least in the aforementioned low refractive index film improves the layer of film side by using oxide target material and adopting the high-frequency sputtering of nitrogenous sputter gas to form, the extinction coefficient that aforementioned driving fit improves film below 0.1 and thickness be 0.5～4nm, the extinction coefficient of aforementioned low refractive index film is below 0.01, and the extinction coefficient of aforementioned high refractive index film is below 0.01.
(2) manufacture method of duplexer, it is to stack gradually the manufacture method that silverskin, driving fit improve the duplexer of film, low refractive index film, high refractive index film on substrate, it is characterized in that, the layer that driving fit at least in the aforementioned low refractive index film improves the film side forms by oxygen-free sputtering method in the sputter gas, the extinction coefficient that aforementioned driving fit improves film below 0.1 and thickness be 0.5～4nm, the extinction coefficient of aforementioned low refractive index film is below 0.01, and the extinction coefficient of aforementioned high refractive index film is below 0.01.
In addition, thickness is meant the geometry thickness in the present invention.
Duplexer of the present invention uses the material of silver as metal film, so can improve the reflectivity of visible region, and permanance is also good, therefore can be used as the optical component that display is used, and also helps the brightness raising of display and the reduction of optical design difficulty.In addition, duplexer of the present invention does not need to be formed for the unnecessary layer of anti-oxidation, and productivity is good.In addition, because it is good to have permanance such as high reflectance and moisture-proof, therefore particularly can be used as the optical component of the many rear-projection TV sets of order of reflection.
The simple declaration of accompanying drawing
Fig. 1 is the sectional view of duplexer of the present invention.
The explanation of symbol
1: substrate, 2: basilar memebrane, 3: silverskin, 4: driving fit improves film, and 5: low refractive index film, 6: high refractive index film, 10: duplexer.
The best mode that carries out an invention
In the duplexer of the present invention, the kind of substrate is not particularly limited, and for example can exemplify 1) glass such as soda-lime glass, 2) film of PET (polyethylene terephthalate) resin, acryl resin, polycarbonate etc. etc.Even use glass to have the big advantage that also is difficult for taking place warpage or bending of area, using film to have can light-weighted advantage.Substrate is under the situation of glass, and from the intensity of duplexer and the angle of ease for use, the thickness of substrate better is 0.4～8.0mm.Substrate is under the situation of film, from can light-weighted angle, better is 30～500 μ m.
The shape of substrate is not particularly limited so long as get final product as the desired shape of matrix of various reflections such as level crossing, concave mirror, convex mirror, trapezoidal mirror with optical device.Form by sputtering method under the situation of duplexer of the present invention, the homogeneity of the film that forms with sputtering method is better than the film that forms with vapour deposition method etc., therefore can form film on large substrate.For example, even be 0.1～5m as substrate area
2Have the larger area substrate and also can carry out film forming, therefore the optical component of using as large-area rear-projection TV set is useful.
The silverskin that light is reflected effectively is to be the film of principal ingredient with silver, and from the angle of the reflectivity of visible region, the content of silver better is more than 90 atom %.By using silverskin, can improve the reflectivity of visible region, reduce the dependence of reflectivity to incident angle.Silverskin can contain impurity such as copper, but its content better is below 10 atom %.In addition, among the present invention, " visible region " is meant the wavelength region may of 400～700nm.
In addition, silverskin can be the alloy film of silver and other metal.As other metal, specifically can exemplify Au.By the alloy film of employing with Au, the permanance of silverskin improves, and is desirable therefore.From the angle that permanance improves, the content of other metal in the alloy film better is 0.5～10 atom %.In addition, from the angle of the reflectivity of visible region, the content of the silver in the alloy film better is more than 90 atom %.
The thickness of silverskin better is 60～200nm, and good especially is 80～120nm.During less than 60nm, the reflectivity of visible region descends; When surpassing 200nm, because of surface concavo-convex produces light absorption, the reflectivity of visible region descends as a result, so is unfavorable.
Low refractive index film of the present invention better is that the refractive index of wavelength 550nm is 1.35～1.75.In addition, low refractive index film must be transparent film from the angle of reflectivity, and the extinction coefficient (hereinafter to be referred as extinction coefficient) that specifically better is the visible region is more preferably below 0.008 below 0.01, and good especially is below 0.005.Specifically, because change of optical property is few, the material of low refractive index film better is oxides such as monox.In addition, when low refractive index film is silicon oxide film, from can obtaining to have the angle of required refractive index, the silicone content of silicon oxide film better be with respect to all metallic elements in the silicon oxide film (comprise semiconductor element, down with) more than 90 quality %.Can comprise other metals such as aluminium in the silicon oxide film.In addition, refractive index is meant the real part of complex index, and extinction coefficient is meant the imaginary part of the complex index in the visible region, can measure by spectroscopic ellipsometry meter (for example VASE:J.A. Wal Lan Mu company (J.A.Woollam society) system).
In the duplexer of the present invention, the high-frequency sputtering of the layer that the driving fit at least in the aforementioned low refractive index film improves the film side by adopting oxide target material (below be also referred to as the RF sputtering method) formation.By using oxide target material,, therefore can prevent the oxidation of silverskin owing to when low refractive index film forms, do not need to import oxygen.
In addition, the Jap.P. spy opens in 2006-010930 number (hereinafter referred to as document 1) and has put down in writing the duplexer with structure similar to the present invention.In the document 1, form low refractive index film by the reactive sputtering method that adopts metal targets.Under this situation, driving fit improves film and also has anti-oxidation function, but known driving fit improves (for example under the situation about 0.5～4nm) under the little situation of the thickness of film, anti-oxidation effect deficiency, and the reflectivity of high reflection mirror reduces.In addition, (for example surpass 4nm) under the big situation of known thickness, because driving fit improves the absorption of film, the reflectivity of high reflection mirror reduces.That is,, can under the situation that does not import oxygen, form low refractive index film, not need to give driving fit and improve the anti-oxidation function of film by forming low refractive index film with the RF sputtering method that adopts oxide target material.Therefore, can be only design the thickness that driving fit improves film from the angle of adaptation.
In addition, in order to prevent the low of above-mentioned reflectivity, proposed to form the technical scheme of antioxidation coating in the document 1.But, not needing to form the so new layer of antioxidation coating among the present invention, the productivity aspect is good.
Among the present invention, the driving fit at least in containing the sputter gas of nitrogen in the formation low refractive index film improves the layer of film side.The layer that driving fit at least in the low refractive index film improves the film side is meant a part of improving the layer or the layer of film in the low refractive index film near driving fit, improve under the situation that directly forms low refractive index film on the layer in driving fit, be meant in the low refractive index film with driving fit improve layer that film joins or layer a part.
If pass through to adopt the high-frequency sputtering of oxide target material to form low refractive index film, though pettiness, driving fit improves film and produces absorption, has the tendency of the reflectivity decline of duplexer.On the other hand, when low refractive index film formed, the gas that contains small amount of nitrogen by use was as sputter gas, and driving fit improves the generation that film absorbs and is inhibited, and can prevent the decline of the reflectivity of high reflection mirror.It is still not fully aware of at present that this driving fit improves the reason that generation that film absorbs is inhibited.Supposition is, if form low refractive index film by the RF sputtering method that adopts oxide target material, then driving fit improves film certain membranous variation may take place, but contains nitrogen in the sputter gas by making, this membranous variation is suppressed, thereby driving fit improves the generation that film absorbs and is inhibited.
In the formation of low refractive index film, the interpolation of nitrogen can be carried out all layers, and the part layer that also can be only driving fit be improved the film side carries out.By using nitrogenous sputter gas, be easy to generate the decline of film forming speed, so, better be that the layer that only driving fit is improved the film side carries out the interpolation of nitrogen from productive angle.The layer that driving fit is improved the film side carries out under the situation of interpolation of nitrogen, improves film from driving fit and absorbs inhibition and the productive angle that produces, and the thickness that adds the layer of nitrogen better is 1～5nm.From preventing that driving fit from improving the angle of the generation of film absorption, the containing ratio of the nitrogen in the sputter gas better is 2～20 volume % of sputter gas integral body.
Owing to can obtain the suitableeest reflectivity, the thickness of low refractive index film better is 25～60nm, and good especially is 35～50nm.In addition, when low refractive index film is silicon oxide film, from can obtaining to have the angle of required refractive index, the silicone content of silicon oxide film better be with respect to all metals in the silicon oxide film and semiconductor element more than 90 quality %.Can comprise other metals such as aluminium in the silicon oxide film.
Aforementioned low refractive index film can be a single or multiple lift.Under the situation about constituting by multilayer, better be that the refractive index of the wavelength 550 of all layer is 1.35～1.75.Must all be transparent also when low refractive index film is multilayer, the extinction coefficient of all layers better be below 0.01, is more preferably below 0.008, and good especially is below 0.005.In addition, from obtaining the angle of the suitableeest reflectivity, the summation of the thickness of multilayer better is 25～60nm, and good especially is 35～50nm.
High refractive index film of the present invention better is that the refractive index of wavelength 550nm is 1.8～2.8.In addition, high refractive index film must be transparent film from the angle of reflectivity, specifically better be extinction coefficient below 0.01, be more preferably below 0.008, good especially is below 0.005.From the angle of reflectivity, the material of high refractive index film specifically better is to be selected from more than a kind of niobium oxide, zirconia, tantalum oxide, hafnia, titanium dioxide and tin oxide.Because the refractive index height, absorptivity is low and film forming speed is fast, and good especially is niobium oxide.In addition, the material of high refractive index film can be composite oxides.From obtaining the angle of the suitableeest reflectivity, the thickness of high refractive index film better is 35～70nm, and good especially is 45～65nm.When high refractive index film is the niobium oxide film, from can obtaining to have the angle of required refractive index, the content of niobium in the niobium oxide film better be with respect to all metallic elements in the niobium oxide film more than 90 quality %.
Aforementioned high refractive index film can be a single or multiple lift.Under the situation about constituting by multilayer, better be that the refractive index of the wavelength 550nm of all layer is 1.8～2.8.Must all be transparent also when high refractive index film is multilayer, the extinction coefficient of all layers better be below 0.01, is more preferably below 0.008, and good especially is below 0.005.In addition, from obtaining the angle of the suitableeest reflectivity, the summation of the thickness of multilayer better is 35～70nm, and good especially is 45～65nm.
Among the present invention, the example that low refractive index film and high refractive index film is stacked gradually a time is illustrated, but is not limited to 1 time, low refractive index film and high refractive index film can be stacked gradually multipass.By stacked multipass, can form the duplexer that reflectivity is further improved.In addition, as from substrate layer farthest, also can be formed for the layer that permanance is improved.
Duplexer of the present invention better is the substrate-side formation basilar memebrane at silverskin.By forming basilar memebrane, can improve the adaptation of silverskin and substrate, can obtain the good duplexer of permanance.Angle from the adaptation of substrate and silverskin, the material of basilar memebrane better is to be selected from more than a kind of oxide, oxides of nitrogen and nitride, better is to be selected from more than a kind of zinc paste, tin oxide, indium oxide, aluminium oxide, titanium dioxide, niobium oxide and chromium oxide specifically.In addition, because the adaptation of monox and silver is poor, therefore if the discontiguous structure of silicon oxide film and silverskin then can be used as basilar memebrane with silicon oxide film.In addition, the material of basilar memebrane can be composite oxides.The thickness of basilar memebrane better is 1～20nm, is more preferably 2～10nm, and good especially is 3～7nm.During less than 1nm, be difficult to present the effect that adaptation improves; When surpassing 20nm, surperficial is concavo-convex big, and reflectivity reduces.In addition, the aforementioned substrates film can be a single or multiple lift.Under the situation of multilayer, the summation that better is thickness is in above-mentioned scope.
Basilar memebrane is under the situation of Zinc oxide film, the zinc content in the Zinc oxide film better be with respect to all metallic elements in the Zinc oxide film more than 90 quality %.Can comprise other metal in the Zinc oxide film.By comprising other metal, can further improve the adaptation of substrate and silverskin.As other metal, can exemplify aluminium, gallium, tin, titanium, silicon etc., from the angle of the adaptation that can improve substrate and silverskin, it is 2～10 quality % that its content is scaled that oxide haggles over.
Duplexer of the present invention is provided with driving fit at the substrate opposition side of silverskin and improves film.Improve film by driving fit, not only help the raising of the moisture-proof of duplexer, but also the adaptation of low refractive index film and silverskin is improved.From the angle of reflectivity, driving fit improves the extinction coefficient of film below 0.1, better is below 0.05, and good especially is below 0.02.The material that driving fit improves film is the material different with the low refractive index film of adjacency, angle from the adaptation of low refractive index film and silverskin, better be extinction coefficient at the oxide below 0.1, be specially and be selected from more than a kind of zinc paste, tin oxide, indium oxide, aluminium oxide and titanium dioxide.In addition, since poor as the monox of low refractive index film with the adaptation of silver, therefore if the discontiguous structure of silicon oxide film and silverskin then can be improved film as driving fit with silicon oxide film.In addition, to improve the material of film can be composite oxides in driving fit.The thickness that driving fit improves film better is 0.5～4nm, and good especially is 0.5～2nm.During less than 0.5nm, be difficult to present the effect that adaptation improves; When surpassing 4nm, because driving fit improves the absorption of film, the reflectivity of duplexer reduces, and is unfavorable therefore.It can be single or multiple lift that aforementioned driving fit improves film.Under the situation of multilayer, the summation that better is thickness is in above-mentioned scope.
Driving fit improves under the situation that film is a Zinc oxide film, the zinc content in the Zinc oxide film better be with respect to all metallic elements in the Zinc oxide film more than 90 quality %.Can comprise other metal in the Zinc oxide film.By comprising other metal, can further improve the adaptation of low refractive index film and silverskin.As other metal, specifically can exemplify and be selected from more than a kind of gallium, tin, silicon and titanium, from the angle of relieve stresses, it is 2～10 quality % that the total content of other metal is scaled that oxide haggles over.In addition, as other metal, there is absorption in aluminium in the visible region, be unfavorable.
It is to comprise under the situation of the Zinc oxide film more than a kind (hereinafter referred to as the GSTZO film) that is selected from gallium, tin and titanium that driving fit improves film, can also comprise silicon.By making it comprise silicon, film becomes and is difficult for being reduced, and can form the film with stable optical characteristics.Silicone content in the GSTZO film better is to be 0.05～1 quality % with respect to all metallic elements in the GSTZO film.
Driving fit improves under the situation that film is an indium oxide film, can also comprise other metal.From the angle of adaptation, aforementioned other metal better is a zinc.The indium oxide film that comprises zinc has the amorphous structure of presenting, easily whole feature that forms the film of homogeneous.Therefore, infer and use the indium oxide film that contains zinc to improve under the situation of film as driving fit, though the less film that also can between silverskin and low refractive index film, form homogeneous of thickness, so adaptation becomes higher.Under this situation, from the angle of reflectivity, the thickness that driving fit improves film better is 0.5～4nm.From making the good angle of adaptation and reflectivity, containing zinc content in the indium oxide film of zinc and better be with respect to all metallic elements in the indium oxide film that contains zinc is 5～15 quality %.
As previously mentioned, duplexer of the present invention comprises that in the one side formation of substrate silverskin, driving fit improve the multilayer film of the structure of film, low refractive index film, high refractive index film, but also this multilayer film can be located at the two sides of substrate.In addition, can be identical or different in the structure of the multilayer film that the two sides had.
In the duplexer of the present invention, duplexer better is more than 93% for the minimum in the whole visible region of reflection of incident light rate (hereinafter referred to as the face reflectivity) of the face of the layer that contacts with air in incident angle is the scope of 0～75 degree, and good especially is more than 94%.Especially, incident angle is 5 when spending, and better is more than 93%, and good especially is more than 94%.In addition, the mean value of the face reflectivity of visible region better is more than 97.5% in incident angle is 0～75 scope of spending, and good especially is more than 98%.Especially, incident angle is 5 when spending, and better is more than 97.5%, and good especially is more than 98%.The face reflectivity of duplexer of the present invention reaches aforesaid high value, even therefore constantly reflect in electronic equipments such as projection TV set, also can demonstrate image under the situation that brightness is descended.In addition, incident angle be meant with respect to the face rectilinear angle of hanging down, the mean value of the face reflectivity of visible region be meant the face reflectivity arithmetic mean that will record every 5nm in the scope of wavelength 400～700nm and value.
In addition, duplexer of the present invention also has the incident angle dependency advantage of little (reflectivity is difficult for changing with the incident angle of light).
Duplexer of the present invention can use metal targets or metal oxide target to form by sputtering method.Duplexer has being described as follows of manufacture method that is followed successively by basilar memebrane, silverskin, the driving fit duplexer when improving the structure of film, low refractive index film, high refractive index film from substrate.At first, on substrate 1) use the metal oxide target to form basilar memebrane by sputtering method, 2) on this basilar memebrane, use the target of silver or silver alloy to form silverskin by sputtering method, 3) on this silverskin, use the metal oxide target to form driving fit and improve film by sputtering method, 4) improve on the film in this driving fit use oxide target material to form low refractive index film by high-frequency sputtering, 5) on this low refractive index film, use the oxygen disappearance target of metal oxide target or metal oxide to form high refractive index film by the reactive sputtering method.3) formation driving fit improves under the situation of film, in order to prevent the oxidation of silver, better is to form driving fit to improve film under the atmosphere that does not have oxidizing gas such as oxygen.When the formation driving fit improved film, the content of the oxidizing gas in the sputter gas better was below 10 volume %.Under the situation of formation low refractive index film in addition, 4), comprise nitrogen in the sputter gas.Nitrogen content in the sputter gas better is 2～20 volume %.In the formation of low refractive index film, the interpolation of nitrogen can be carried out all layers, and the part layer that also can be only driving fit be improved the film side carries out.
As shown in Figure 1, duplexer 10 of the present invention has from substrate 1 and is followed successively by the structure that basilar memebrane 2, silverskin 3, driving fit improve film 4, low refractive index film 5, high refractive index film 6.
As sputtering method, can use high frequency (RF) or direct current (DC) sputtering method.The DC sputtering method comprises pulsed D C sputtering method.Pulsed D C sputtering method is preventing that aspect the paradoxical discharge be effective.In addition, compare with vapour deposition method, sputtering method can be on large-area substrate film forming, and the deviation that the face of thickness distributes is little, even therefore have the advantage with low uncertainty of carrying out the photometric distribution in the reflecting surface repeatedly.
Duplexer of the present invention has very high reflectivity, is effective as the optical components such as reflecting member of the light source of display screen used in flat-panel monitor, projection TV set, the mobile phone etc. etc.
Embodiment
Below, example embodiment, but be not limited thereto.
(example 1～4)
Behind the soda-lime glass substrate cleaning with thick 1.1mm, glass substrate is arranged in the batch-wise sputter equipment, with as the interpolation of target the zinc paste target of gallium (the containing ratio 5.7 quality % of gallium oxide, the containing ratio 94.3 quality % of zinc paste), silver alloy target (Au containing ratio 1 atom %, the containing ratio 99 atom % of silver), the silicon dioxide target (SiO of Au have been added
2Containing ratio 99.9 atom %), oxygen deletion form niobium oxide target (Nb
2O
5-X (X=0～1)) is arranged at the relative position of substrate respectively, will be vented to 8 * 10 in the vacuum tank
-4Pa.Then, by forming following A successively)～E) film, thus duplexer obtained.
A) (formation of basilar memebrane (Zinc oxide film))
The zinc paste target of gallium has been added in use, by the RF sputtering method, under argon gas atmosphere, to drop into power density 1.6W/cm
2, sputtering pressure 0.3Pa condition, on glass substrate, form the gallium-doped zinc oxide film with the thickness of 6nm.Substrate heats.The composition of gallium-doped zinc oxide film is identical with target.
In addition, for thickness, on the glass substrate of preparing in addition,, measure its thickness, calculate the thickness of basilar memebrane by this measured value with probe contourgraph DEKTAK3-ST (Wei Yike company (Veeco society) system) to form basilar memebrane with the same condition (only film formation time being made as 10 times) of example 1.Following thickness is also measured by same method.
B) (formation of silver alloy film)
After discharging survival gas, use the silver alloy target that has added Au, by the DC sputtering method, under argon gas atmosphere, to drop into power density 1.4W/cm
2, sputtering pressure 0.3Pa condition, on basilar memebrane, form silver alloy film with the thickness of 100nm.Substrate heats.The composition of silver alloy film is identical with target.
C) (driving fit improves the formation of film (Zinc oxide film))
After discharging survival gas, use the zinc paste target that has added gallium, by the RF sputtering method, under argon gas atmosphere, to drop into power density 0.5W/cm
2, sputtering pressure 0.3Pa condition, on silver alloy film with the thickness of 2nm form the gallium-doped zinc oxide film (refractive index of wavelength 550nm: 1.99, extinction coefficient: 0.017).Substrate heats.The composition of gallium-doped zinc oxide film is identical with target.
D) (formation of low refractive index film (silicon oxide film))
After discharging survival gas, use the silicon dioxide target, by the RF sputtering method, use the Ar of the volume ratio shown in the table 1 and the mixed gas (oxygen-free) of nitrogen, with the condition of the input power density shown in the table 1, sputtering pressure 0.3Pa, improve on the film thickness with 3nm in driving fit and form silicon oxide film as the initiation layer of low refractive index film.Substrate heats.Then, behind the discharge survival gas, use the silicon dioxide target, by the RF sputtering method, under argon gas (oxygen-free) atmosphere, to drop into power density 2.4W/cm
2, sputtering pressure 0.3Pa condition, with the thickness of 41nm form silicon oxide film (refractive index of wavelength 550nm: 1.47, extinction coefficient: 0).Substrate heats.
E) (formation of high refractive index film (niobium oxide film))
After discharging survival gas, use niobium oxide target, by the DC sputtering method, at the mixed gas (containing ratio of the oxygen in the sputter gas: 10 volume %) under the atmosphere, of Ar and oxygen to drop into power density 3.3W/cm
2, sputtering pressure 0.3Pa condition, on low refractive index film with the thickness of 57nm form the niobium oxide film (refractive index of wavelength 550nm: 2.31, extinction coefficient: 0).Substrate heats.
Permanance and reflectivity to formed duplexer are estimated with the method for (1)～(4), and it the results are shown in table 2.
(1) high temperature and humidity test
The duplexer that forms is cut out the square of length of side 50mm, as sample.Sample was placed 24 hours under the atmosphere of 80 ℃ of temperature, relative humidity 95%, and what the film after confirming to place was peeled off and corroded has or not.In the table 2 zero expression had not both had peeling off of film, and was unconfirmed to detecting of corroding yet, and confirmed detecting of peeling off or corrode on * expression the film.On actual the use, better be zero.
(2) hot test
The duplexer that forms is cut out the square of length of side 50mm, as sample.Sample was placed 48 hours under the atmosphere of 200 ℃ of temperature, and what the film after confirming to place was peeled off and corroded has or not.In the table 2 zero expression had not both had peeling off of film, and was unconfirmed to detecting of corroding yet, and confirmed detecting of peeling off or corrode on * expression the film.On actual the use, better be zero.
(3) adaptation (A)
Face at the duplexer that forms is pasted cellophane band CT-18 (Nichiban Company Ltd (ニ チ バ Application society) system) securely with hand, and what the film after confirming to shell was with sudden force peeled off has or not.Zero: do not have peeling off of film.*: confirm peeling off of film.On actual the use, better be zero.
(4) face reflectivity
Incident angle with 5 degree, measure the face reflectivity (reflectivity when the direction opposite with substrate observed of silverskin) of the duplexer that forms with spectrophotometer U-4000 (Hitachi Co., Ltd (day upright System do institute) system), calculate the minimum and the mean value of whole visible region.In addition, incident angle be meant with respect to the face rectilinear angle of hanging down.With the minimum of reflectivity more than 93% and the mean value of reflectivity do zero in the note of the situation more than 97.5%, with the minimum of reflectivity less than 93% or the mean value of reflectivity less than 97.5% situation note do *.On actual the use, better be zero.
(5) adaptation (B)
Measure according to defined cross-hatching among the JIS-K5600-5-6 (1999) (Network ロ ス カ Star ト method).Form 100 grids that the length of side is 1mm at face, adhere to cellophane band CT-18 (Nichiban Company Ltd (ニ チ バ Application society) system) on grid, what the film after confirming to shell was with sudden force peeled off has or not.Zero: do not have peeling off of film.△: confirm peeling off of film, but actual use is upward no problem.*: confirm peeling off of film.On actual the use, better be zero and △, be more preferably zero.
(example 5) (comparative example)
In the example 1,, use the silicon dioxide target, by the RF sputtering method, under argon gas atmosphere (being unazotized atmosphere), to drop into power density 2.4W/cm except initiation layer as low refractive index film
2, sputtering pressure 0.3Pa condition, form beyond the silicon oxide film with the thickness of 3nm, by forming duplexer with same method and the condition of example 1.By estimating with the same method of example 1, it the results are shown in table 2 for this duplexer.
(example 6) (comparative example)
In the example 2, do not improve the film, by forming duplexer with same method and the condition of example 2 except forming driving fit.By estimating with the same method of example 1, it the results are shown in table 2 for this duplexer.
(example 7) (comparative example)
In the example 2, except the thickness that driving fit is improved film is made as 1nm, by forming duplexer with same method and the condition of example 2.By estimating with the same method of example 1, it the results are shown in table 2 for this duplexer.
(example 8) (comparative example)
In the example 2, except the thickness that driving fit is improved film is made as 5nm, by forming duplexer with same method and the condition of example 2.By estimating with the same method of example 1, it the results are shown in table 2 for this duplexer.
(example 9～11) (comparative example)
Behind the soda-lime glass substrate cleaning with thick 1.1mm, glass substrate is arranged in the batch-wise sputter equipment, with as the interpolation of target the zinc paste target of gallium (the containing ratio 5.7 quality % of gallium oxide, the containing ratio 94.3 quality % of zinc paste), silver alloy target (Au containing ratio 1 atom %, the containing ratio 99 atom % of silver), metallic silicon target (Si containing ratio 99.9 atom %), the oxygen deletion form niobium oxide target (Nb of Au have been added
2O
5-X(X=0～1)) be arranged at the relative position of substrate respectively, will be vented to 8 * 10 in the vacuum tank
-4Pa.Then, by forming following A successively)～E) film, thus duplexer obtained.
A) (formation of basilar memebrane (Zinc oxide film))
The zinc paste target of gallium has been added in use, by the RF sputtering method, under argon gas atmosphere, to drop into power density 1.6W/cm
2, sputtering pressure 0.3Pa condition, on glass substrate, form the gallium-doped zinc oxide film with the thickness of 6nm.Substrate heats.The composition of gallium-doped zinc oxide film is identical with target.
B) (formation of silver alloy film)
After discharging survival gas, use the silver alloy target that has added Au, by the DC sputtering method, under argon gas atmosphere, to drop into power density 1.4W/cm
2, sputtering pressure 0.3Pa condition, on basilar memebrane, form silver alloy film with the thickness of 100nm.Substrate heats.The composition of silver alloy film is identical with target.
C) (driving fit improves the formation of film (Zinc oxide film))
After discharging survival gas, use the zinc paste target that has added gallium, by the RF sputtering method, under argon gas atmosphere, to drop into power density 0.5W/cm
2, sputtering pressure 0.3Pa condition, on silver alloy film with the thickness shown in the table 1 form the gallium-doped zinc oxide film (refractive index of wavelength 550nm: 1.99, extinction coefficient: 0.017) (example 9 no driving fits improve film).Substrate heats.The composition of gallium-doped zinc oxide film is identical with target.
D) (formation of low refractive index film (silicon oxide film))
After discharging survival gas, use the metallic silicon target, by pulsed D C sputtering method, at the mixed gas (containing ratio of the oxygen in the sputter gas: 34 volume %) under the atmosphere, of Ar and oxygen to drop into power density 2.4W/cm
2, sputtering pressure 0.3Pa condition, with the thickness of 42nm form silicon oxide film (refractive index of wavelength 550nm: 1.46, extinction coefficient: 0).Substrate heats.
E) (formation of high refractive index film (niobium oxide film))
After discharging survival gas, use niobium oxide target, by the DC sputtering method, at the mixed gas (containing ratio of the oxygen in the sputter gas: 10 volume %) under the atmosphere, of Ar and oxygen to drop into power density 3.3W/cm
2, sputtering pressure 0.3Pa condition, on low refractive index film with the thickness of 57nm form the niobium oxide film (refractive index of wavelength 550nm: 2.31, extinction coefficient: 0).Substrate heats.By estimating with the same method of example 1, it the results are shown in table 2 for this duplexer.In addition, example 9 is owing to the oxidation of silver alloy film forms transparent film.
[table 1]
| Example | Driving fit improves the thickness (nm) of film (GZO) | What the oxygen when low refractive index film forms imported has or not | Volume ratio (volume %) in the sputter gas when initiation layer of low refractive index film forms | Power density (the W/cm when initiation layer of low refractive index film forms 2) | ||
| Ar | N 2 | O 2 | ||||
| 1 | 2 | Do not have | 97 | 3 | - | 2.4 |
| 2 | 2 | Do not have | 91 | 9 | - | 2.4 |
| 3 | 2 | Do not have | 91 | 9 | - | 1.4 |
| 4 | 2 | Do not have | 86 | 14 | - | 1.4 |
| 5 | 2 | Do not have | 100 | 0 | - | 2.4 |
| 6 | 0 (no film) | Do not have | 91 | 9 | - | 2.4 |
| 7 | 1 | Do not have | 91 | 9 | - | 2.4 |
| 8 | 5 | Do not have | 91 | 9 | - | 2.4 |
| 9 | 0 (no film) | Have | 66 | - | 34 | - |
| 10 | 1 | Have | 66 | - | 34 | - |
| 11 | 3 | Have | 66 | - | 34 | - |
[table 2]
| Example | High temperature and humidity test (1) | Hot test (2) | Adaptation (A) (3) | Face reflectivity (4) | Adaptation (B) (5) |
| 1 | ○ | ○ | ○ | ○ | △ |
| 2 | ○ | ○ | ○ | ○ | △ |
| 3 | ○ | ○ | ○ | ○ | △ |
| 4 | ○ | ○ | ○ | ○ | △ |
| 5 | ○ | ○ | ○ | × | △ |
| 6 | × | ○ | × | ○ | × |
| 7 | ○ | ○ | ○ | ○ | △ |
| 8 | ○ | ○ | ○ | × | ○ |
| 9 | × | × | × | × | × |
| 10 | ○ | ○ | ○ | × | △ |
| 11 | ○ | ○ | ○ | × | △ |
In the duplexer of example 1～4 and example 7, driving fit improves when little and initiation layer low refractive index film of the thickness of film forms uses the sputter gas that contains nitrogen, thus driving fit to improve the absorption of film little, the face reflectivity is good.In addition, improve film by forming driving fit, permanance such as moisture-proof, thermotolerance are good.In adaptation (A), these two kinds of tests of adaptation (B), adaptation all is that no problem level is gone up in actual use.
Relatively, use unazotized sputter gas when the initiation layer of low refractive index film forms in the example 5, therefore produce the absorption that driving fit improves film, face reflectivity deterioration is unfavorable.
The duplexer of example 6 does not form driving fit and improves film, so poor durability such as adaptation and moisture-proof, is unfavorable.
In addition, in the duplexer of example 8, though the performance to the 5nm adaptation is abundant greatly because of driving fit improves the thickness of film, the absorption that driving fit improves film is big, and face reflectivity deterioration is unfavorable.
The duplexer of example 9 since when low refractive index film forms importing oxygen, so silver alloy film oxidation and become transparent film, the face reflectivity is deterioration significantly, is unfavorable.
In the duplexer of example 10 and example 11,, do not become transparent film, owing to when low refractive index film forms, import oxygen, face reflectivity deterioration though improve the oxidation that film has suppressed silver alloy film to a certain extent because of being formed with driving fit.
(example 12～14)
Behind the soda-lime glass substrate cleaning with thick 1.1mm, glass substrate is arranged in the batch-wise sputter equipment, with as the interpolation of target the indium oxide target of zinc (the containing ratio 10.7 quality % of zinc paste, the containing ratio 89.3 quality % of indium oxide), silver alloy target (Au containing ratio 1 atom %, the containing ratio 99 atom % of silver), the silicon dioxide target (SiO of Au have been added
2Containing ratio 99.9 atom %), oxygen deletion form niobium oxide target (Nb
2O
5-X(X=0～1)) be arranged at the relative position of substrate respectively, will be vented to 8 * 10 in the vacuum tank
-4Pa.Then, by forming following A successively)～E) film, thus duplexer obtained.
A) (formation of basilar memebrane (mixing the zinc indium oxide film))
The indium oxide target of zinc has been added in use, by the RF sputtering method, under argon gas atmosphere, to drop into power density 1.6W/cm
2, sputtering pressure 0.3Pa condition, on glass substrate, form and mix the zinc indium oxide film with the thickness of 6nm.Substrate heats.The composition of mixing the zinc indium oxide film is identical with target.
B) (formation of silver alloy film)
After discharging survival gas, use the silver alloy target that has added Au, by the DC sputtering method, under argon gas atmosphere, to drop into power density 1.4W/cm
2, sputtering pressure 0.3Pa condition, on basilar memebrane, form silver alloy film with the thickness of 100nm.Substrate heats.The composition of silver alloy film is identical with target.
C) (driving fit improves the formation of film (mixing the zinc indium oxide film))
After discharging survival gas, use the indium oxide target that has added zinc, by the RF sputtering method, under argon gas atmosphere, to drop into power density 0.5W/cm
2, sputtering pressure 0.3Pa condition, on silver alloy film with the thickness shown in the table 3 form mix the zinc indium oxide film (refractive index of wavelength 550nm: 1.99, extinction coefficient: 0.015).Substrate heats.The composition of mixing the zinc indium oxide film is identical with target.
D) (formation of low refractive index film (silicon oxide film))
After discharging survival gas, use the silicon dioxide target, by the RF sputtering method, the mixed gas of Ar and nitrogen (containing ratio of the nitrogen in the sputter gas: 9 volume %), to drop into power density 2.4W/cm
2, sputtering pressure 0.3Pa condition, improve on the film thickness with 3nm in driving fit and form silicon oxide film as the initiation layer of low refractive index film.Substrate heats.Then, behind the discharge survival gas, use the silicon dioxide target, by the RF sputtering method, under argon gas (oxygen-free) atmosphere, to drop into power density 2.4W/cm
2, sputtering pressure 0.3Pa condition, with the thickness of 41nm form silicon oxide film (refractive index of wavelength 550nm: 1.47, extinction coefficient: 0).Substrate heats.
E) (formation of high refractive index film (niobium oxide film))
After discharging survival gas, use niobium oxide target, by the DC sputtering method, at the mixed gas (containing ratio of the oxygen in the sputter gas: 10 volume %) under the atmosphere, of Ar and oxygen to drop into power density 3.3W/cm
2, sputtering pressure 0.3Pa condition, on low refractive index film with the thickness of 57nm form the niobium oxide film (refractive index of wavelength 550nm: 2.31, extinction coefficient: 0).Substrate heats.By estimating with the same method of example 1, it the results are shown in table 4 for this duplexer.
(example 15) (comparative example)
In the example 12, except the thickness that driving fit is improved film is made as 5nm, by forming duplexer with same method and the condition of example 12.By estimating with the same method of example 1, it the results are shown in table 4 for this duplexer.
(example 16) (comparative example)
In the example 13,, use the silicon dioxide target, by the RF sputtering method, under argon gas atmosphere (being unazotized atmosphere), to drop into power density 2.4W/cm except initiation layer as low refractive index film
2, sputtering pressure 0.3Pa condition, form beyond the silicon oxide film with the thickness of 3nm, by forming duplexer with same method and the condition of example 13.By estimating with the same method of example 1, it the results are shown in table 4 for this duplexer.
[table 3]
| Example | Driving fit improves the thickness (nm) of film (IZO) | What the oxygen when low refractive index film forms imported has or not | Volume ratio (volume %) in the sputter gas when initiation layer of low refractive index film forms | Power density (the W/cm when initiation layer of low refractive index film forms 2) | ||
| Ar | N 2 | O 2 | ||||
| 12 | 1 | Do not have | 91 | 9 | - | 2.4 |
| 13 | 2 | Do not have | 91 | 9 | - | 2.4 |
| 14 | 3 | Do not have | 91 | 9 | - | 2.4 |
| 15 | 5 | Do not have | 91 | 9 | - | 2.4 |
| 16 | 2 | Do not have | 100 | 0 | - | 2.4 |
[table 4]
| Example | High temperature and humidity test (1) | Hot test (2) | Adaptation (A) (3) | Face reflectivity (4) | Adaptation (B) (5) |
| 12 | ○ | ○ | ○ | ○ | ○ |
| 13 | ○ | ○ | ○ | ○ | ○ |
| 14 | ○ | ○ | ○ | ○ | ○ |
| 15 | ○ | ○ | ○ | × | ○ |
| 16 | ○ | ○ | ○ | × | ○ |
In the duplexer of example 12～14, driving fit improves when little and initiation layer low refractive index film of the thickness of film forms uses the sputter gas that contains nitrogen, thus driving fit to improve the absorption of film little, the face reflectivity is good.In addition, improve film by forming driving fit, permanance such as moisture-proof, thermotolerance are good.In addition, mix the zinc indium oxide film because driving fit improves the film use, so adaptation is good especially.
Relatively, in the duplexer of example 15 since driving fit improve film thickness greatly to 5nm, the absorption that driving fit improves film is big, face reflectivity deterioration is unfavorable.
In addition, use unazotized sputter gas when the initiation layer of low refractive index film forms in the example 16, therefore produce the absorption that driving fit improves film, face reflectivity deterioration is unfavorable.
The possibility of utilizing on the industry
Duplexer of the present invention is useful as small-sized liquid crystal visual organs such as projection TV set and mobile phones with duplexer used in the backlight module.
In addition, quote the announcement of all the elements of Japanese patent application 2005-220927 number of filing an application on July 29th, 2005 and Japanese patent application 2006-123827 number instructions, claims, accompanying drawing and the summary of filing an application on April 27th, 2006 here as instructions of the present invention.
Claims (18)
1. duplexer, it is to stack gradually the duplexer that silverskin, driving fit improve film, low refractive index film, high refractive index film on substrate, it is characterized in that, the layer that driving fit at least in the aforementioned low refractive index film improves the film side forms by the sputtering method that adopts nitrogenous sputter gas, the extinction coefficient that aforementioned driving fit improves film below 0.1 and thickness be 0.5～4nm, the extinction coefficient of aforementioned low refractive index film is below 0.01, and the extinction coefficient of aforementioned high refractive index film is below 0.01.
2. duplexer as claimed in claim 1 is characterized in that, the thickness that the driving fit at least in the aforementioned low refractive index film improves the layer of film side is 1～5nm.
3. duplexer as claimed in claim 1 or 2 is characterized in that, the nitrogen content percentage in the aforementioned sputter gas is 5～20 volume % with respect to sputter gas integral body.
4. as each the described duplexer in the claim 1～3, it is characterized in that aforementioned silverskin is the alloy film of silver and gold.
5. duplexer as claimed in claim 4 is characterized in that, the golden containing ratio in the aforementioned silverskin is 0.5～10 atom %.
6. as each the described duplexer in the claim 1～5, it is characterized in that the principal ingredient of the material of aforementioned low refractive index film is a monox.
7. as each the described duplexer in the claim 1～6, it is characterized in that the material of aforementioned high refractive index film is to be selected from more than a kind of niobium oxide, zirconia, tantalum oxide, hafnia, titanium dioxide and tin oxide.
8. as each the described duplexer in the claim 1～6, it is characterized in that the material of aforementioned high refractive index film is a niobium oxide.
9. as each the described duplexer in the claim 1～8, it is characterized in that the material that aforementioned driving fit improves film is to be selected from more than a kind of zinc paste, tin oxide, indium oxide, aluminium oxide and titanium dioxide.
10. duplexer as claimed in claim 9 is characterized in that, it is Zinc oxide film that aforementioned driving fit improves film, and aforementioned Zinc oxide film contains other metal, and aforementioned other metal is to be selected from more than a kind of gallium, tin, silicon and titanium.
11. duplexer as claimed in claim 10 is characterized in that, it is 2～10 quality % altogether that the content of aforementioned other metal is converted into the oxide meter with respect to all metallic elements in the Zinc oxide film.
12. duplexer as claimed in claim 9 is characterized in that, it is indium oxide film that aforementioned driving fit improves film, and aforementioned indium oxide film contains zinc.
13. duplexer as claimed in claim 12 is characterized in that, the content of aforementioned zinc is 5～15 quality % with respect to all metallic elements that driving fit improves in the film.
14. as each the described duplexer in the claim 1～13, it is characterized in that, substrate-side at aforementioned silverskin is formed with basilar memebrane, the geometry thickness of aforementioned substrates film is 1～20nm, and the material of aforementioned substrates film is to be selected from more than a kind of zinc paste, tin oxide, indium oxide, aluminium oxide, titanium dioxide, niobium oxide and chromium oxide.
15. each the described duplexer as in the claim 1～14 is characterized in that aforementioned silverskin, aforementioned driving fit improve film, aforementioned high refractive index film and aforementioned substrates film and form by sputtering method.
16. each the described duplexer as in the claim 1～15 is characterized in that the thickness of aforementioned silverskin is 60～200nm, the thickness of aforementioned low refractive index film is 25～60nm, and the thickness of aforementioned high refractive index film is 35～70nm.
17. display is characterized in that, the described duplexer of each in the claim 1～16 is used as the reflecting member of the light source of display.
18. the manufacture method of duplexer, it is to stack gradually the manufacture method that silverskin, driving fit improve the duplexer of film, low refractive index film, high refractive index film on substrate, it is characterized in that the layer that the driving fit at least in the aforementioned low refractive index film improves the film side forms by the sputtering method that adopts nitrogenous sputter gas; Described duplexer is formed, the extinction coefficient that aforementioned driving fit improves film below 0.1 and thickness be 0.5～4nm, the extinction coefficient of aforementioned low refractive index film is below 0.01, the extinction coefficient of aforementioned high refractive index film is below 0.01.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005220927 | 2005-07-29 | ||
| JP220927/2005 | 2005-07-29 | ||
| JP123827/2006 | 2006-04-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101233434A true CN101233434A (en) | 2008-07-30 |
Family
ID=39898980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800277249A Pending CN101233434A (en) | 2005-07-29 | 2006-07-04 | Laminated body for reflection film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101233434A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610720A (en) * | 2012-03-21 | 2012-07-25 | 厦门市三安光电科技有限公司 | Light-emitting diode (LED) with omnidirectional reflector and manufacturing method of LED |
| US9523516B2 (en) | 2008-12-30 | 2016-12-20 | 3M Innovative Properties Company | Broadband reflectors, concentrated solar power systems, and methods of using the same |
| CN106291908A (en) * | 2016-10-18 | 2017-01-04 | 中国科学院国家天文台南京天文光学技术研究所 | Golden enhancement mode reflectance coating system and preparation method for large-scale astronomical telescope primary mirror |
| CN106772730A (en) * | 2017-02-09 | 2017-05-31 | 吉林大学 | A kind of durable multi-layer film material of the new high infrared reflection based on hafnium nitride |
| CN108028461A (en) * | 2015-09-23 | 2018-05-11 | 金勋来 | Layered product |
| CN108351442A (en) * | 2015-08-25 | 2018-07-31 | 阿兰诺德股份有限两合公司 | Reflexive composite material with aluminium substrate and argentum reflecting layer |
| CN111522083A (en) * | 2020-05-26 | 2020-08-11 | 宁波瑞凌新能源科技有限公司 | Adhesive force enhanced type broad spectrum reflecting film and preparation method thereof |
| CN112731576A (en) * | 2020-12-29 | 2021-04-30 | 宁波长阳科技股份有限公司 | Reflecting film and preparation method and application thereof |
| CN113278937A (en) * | 2021-05-21 | 2021-08-20 | 安徽亦高光电科技有限责任公司 | Functional film production process and equipment |
| CN114214600A (en) * | 2021-12-17 | 2022-03-22 | 东莞市光志光电有限公司 | Preparation method of antioxidant PET silver film |
| TWI814157B (en) * | 2020-11-30 | 2023-09-01 | 日商迪睿合股份有限公司 | Optical laminate, article |
-
2006
- 2006-07-04 CN CNA2006800277249A patent/CN101233434A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9523516B2 (en) | 2008-12-30 | 2016-12-20 | 3M Innovative Properties Company | Broadband reflectors, concentrated solar power systems, and methods of using the same |
| CN102610720B (en) * | 2012-03-21 | 2014-07-09 | 厦门市三安光电科技有限公司 | Light-emitting diode (LED) with omnidirectional reflector and manufacturing method of LED |
| CN102610720A (en) * | 2012-03-21 | 2012-07-25 | 厦门市三安光电科技有限公司 | Light-emitting diode (LED) with omnidirectional reflector and manufacturing method of LED |
| CN108351442A (en) * | 2015-08-25 | 2018-07-31 | 阿兰诺德股份有限两合公司 | Reflexive composite material with aluminium substrate and argentum reflecting layer |
| CN108028461A (en) * | 2015-09-23 | 2018-05-11 | 金勋来 | Layered product |
| CN106291908A (en) * | 2016-10-18 | 2017-01-04 | 中国科学院国家天文台南京天文光学技术研究所 | Golden enhancement mode reflectance coating system and preparation method for large-scale astronomical telescope primary mirror |
| CN106291908B (en) * | 2016-10-18 | 2021-05-11 | 中国科学院国家天文台南京天文光学技术研究所 | Gold-enhanced reflecting film system for primary mirror of large astronomical telescope and preparation method thereof |
| CN106772730A (en) * | 2017-02-09 | 2017-05-31 | 吉林大学 | A kind of durable multi-layer film material of the new high infrared reflection based on hafnium nitride |
| CN106772730B (en) * | 2017-02-09 | 2019-01-25 | 吉林大学 | A kind of durable multi-layer film material of high infrared reflection based on hafnium nitride |
| CN111522083A (en) * | 2020-05-26 | 2020-08-11 | 宁波瑞凌新能源科技有限公司 | Adhesive force enhanced type broad spectrum reflecting film and preparation method thereof |
| TWI814157B (en) * | 2020-11-30 | 2023-09-01 | 日商迪睿合股份有限公司 | Optical laminate, article |
| CN112731576A (en) * | 2020-12-29 | 2021-04-30 | 宁波长阳科技股份有限公司 | Reflecting film and preparation method and application thereof |
| CN113278937A (en) * | 2021-05-21 | 2021-08-20 | 安徽亦高光电科技有限责任公司 | Functional film production process and equipment |
| CN114214600A (en) * | 2021-12-17 | 2022-03-22 | 东莞市光志光电有限公司 | Preparation method of antioxidant PET silver film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101233434A (en) | Laminated body for reflection film | |
| CN100403067C (en) | High reflectance mirror | |
| KR20080031174A (en) | Laminated body for reflection film | |
| EP1005440B1 (en) | Silicon oxynitride protective coatings | |
| JP5101763B2 (en) | Sputter target of zinc-tin alloy | |
| JP4961786B2 (en) | Transparent conductive film and transparent conductive film using the same | |
| US20060068227A1 (en) | Ag-based reflection film and method for preparing the same | |
| JP2005029849A (en) | Ag ALLOY REFLECTIVE FILM FOR REFLECTOR, REFLECTOR USING THE Ag ALLOY REFLECTIVE FILM, AND Ag ALLOY SPUTTERING TARGET FOR DEPOSITING THE Ag ALLOY REFLECTIVE FILM | |
| JP2004002929A (en) | Silver alloy, sputtering target, reflector for reflection lcd, reflection wiring electrode, thin film, manufacturing method therefor, optical recording medium, electro magnetic wave shield, metal material for electronic part, wiring material, electronic part, electronic appliance, processing method of metal film, electron optical part, laminate, and glass of building material | |
| EP1213599A2 (en) | Heat resistant reflecting layer | |
| JP2012533514A (en) | Low emission glass and manufacturing method thereof | |
| WO2016204018A1 (en) | Low-reflectance electrode for display device, and sputtering target | |
| JP4918231B2 (en) | Method for producing Ag alloy film | |
| JP4671579B2 (en) | Ag alloy reflective film and method for producing the same | |
| JP4714477B2 (en) | Ag alloy film and manufacturing method thereof | |
| EP2148240A1 (en) | Transparent electrode | |
| JP4615701B2 (en) | Laminate using high heat-resistant reflective film | |
| WO2006132417A1 (en) | Silver alloy excellent in reflectance/transmittance maintaining characteristics | |
| JP2004277780A (en) | Layered structure of silver alloy, and electrode, electric wiring, reflective film and reflective electrode using it | |
| JP2006010930A (en) | High reflectance mirror | |
| JP4428152B2 (en) | High reflector | |
| JP2007310335A (en) | Front surface mirror | |
| JP2002129259A (en) | Highly heat-resistant reflection film and laminated body, reflection plate for liquid crystal display element and glass as building material using the film | |
| TW445303B (en) | Low reflection film substrate | |
| JP2005093441A (en) | Layered transparent conductive film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080730 |