CN101226338B - Method for detecting calibration degree of scanning exposure machine - Google Patents
Method for detecting calibration degree of scanning exposure machine Download PDFInfo
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- CN101226338B CN101226338B CN2007100365301A CN200710036530A CN101226338B CN 101226338 B CN101226338 B CN 101226338B CN 2007100365301 A CN2007100365301 A CN 2007100365301A CN 200710036530 A CN200710036530 A CN 200710036530A CN 101226338 B CN101226338 B CN 101226338B
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Abstract
A calibration detection method of scanning exposure machine comprises selecting a standard scanning exposure machine, adjusting the precision of the transmission system of the standard scanning exposure machine, using the standard scanning exposure machine to define a preset mark pattern on a chip, using etching technique to form a stereoscopic mark pattern on the chip, using an object scanning exposure machine to simulate the processing on the chip with the marks, and judging the calibration degree of the object scanning exposure machine according to the difference between the error value in the processing result report output from the object scanning exposure machine and a preset error allowance range. The invention resolves the detection problem of multiple scanning exposure machines with un-consist calibrations.
Description
[technical field]
The present invention relates to utilize scanning exposure machine to carry out the field of wafer process, relate in particular to a kind of method for detecting calibration degree of scanning exposure machine.
[background technology]
Be used for the wafer that working integrated circuit uses, generally be divided into tens layers, some will be divided into twenties layers because the structure difference of each layer, so common every layer all be to be machined on the wafer through different scan exposures.If the aligning of different scanning exposure machines is inconsistent, then will there be deviation between the different layers of same wafer, if this deviation has exceeded the specified standard scope, then also have very big deviation between each layer of the wafer that comes out of production and processing, such wafer just can't be used for carrying out following process, is exactly substandard product.
Solve the deviation of the alignment problem between the wafer different layers, will make the aligning of all boards all consistent as far as possible.Therefore, industry is devoted to the different problem of absolute alignment criteria between the different scanning exposure machines all the time, determines but absolute standard is very difficult, because the standard difference of different platform inside.Therefore the calibration criterion and the method that are used to detect the different scanning exposure machine also are difficult to determine.
[summary of the invention]
The object of the present invention is to provide a kind of method for detecting calibration degree of scanning exposure machine, overcome the deficiencies in the prior art,, solve many scanning exposure machines of detection and aim at inconsistent problem by detecting the relative deviation between the different scanning exposure machine.
The present invention realizes by following technical method:
A kind of method for detecting calibration degree of scanning exposure machine comprises the following steps: selected scanning exposure machine as standard, and adjusts the precision of the transmission system of described standard scan exposure machine; Use described standard scan exposure machine on wafer, to define predetermined marker graphic, and after etching technics processing, on wafer, form three-dimensional marker graphic; With the described wafer that is carved with mark of scanning exposure machine simulation processing to be measured; Judge the calibration degree of scanning exposure machine to be measured according to deviate in the processing result report of described scanning exposure machine output to be measured and predetermined deviation allowed band.
In the described method for detecting calibration degree of scanning exposure machine, described wafer should be more than 5 or 5.
Deviate in the described processing result report comprises the deviate of directions X, the deviate and the angular deviation value of Y direction.Deviate in the described processing result report should be mean value.The shape of described mark can be rectangle, circle, triangle or ellipse.The maximum length of the figure of described mark should not surpass 1/3rd of described wafer radius.Described mark should be etched between 2/3rds radiuses and circumference of described wafer.
Described method for detecting calibration degree of scanning exposure machine, described mark should be more than 2 or 2.Should be maximum apart from sum between the described mark.Deviate in the described processing result report comprises the deviate of directions X, the deviate and the angular deviation value of Y direction.Deviate in the described processing result report should be mean value.The shape of described mark can be rectangle, circle, triangle or ellipse.The maximum length of the figure of described mark should not surpass 1/3rd of described wafer radius.Described mark should be etched between 2/3rds radiuses and circumference of described wafer.
Method for detecting calibration degree of scanning exposure machine of the present invention is reference with the some wafers as the scan exposure machine work of standard, judge the Aligning degree of to-be-detected machine by the data that when processing simulation on to-be-detected machine draws, solved many scanning exposure machines and aimed at detection problem when inconsistent with respect to the standard scan exposure machine.
[description of drawings]
Fig. 1 is the process flow diagram of method for detecting calibration degree of scanning exposure machine of the present invention;
Fig. 2 is the synoptic diagram that the wafer of etching mark is arranged;
Fig. 3 is to use the inventive method to judge the synoptic diagram of many calibration degree of scanning exposure machine;
[embodiment]
See also Fig. 1, Fig. 1 is the process flow diagram of method for detecting calibration degree of scanning exposure machine of the present invention, comprises the following steps: selected scanning exposure machine as standard, adjusts the precision of the transmission system of described standard scan exposure machine; Use described standard scan exposure machine on wafer, to define predetermined marker graphic, and after etching technics processing, on wafer, form three-dimensional marker graphic; With the described wafer that is carved with mark of scanning exposure machine simulation processing to be measured; With deviate in the processing result report of described scanning exposure machine output to be measured and predetermined deviation allowed band contrast, judge the calibration degree of scanning exposure machine to be measured.
Deviate in the described processing result report comprises the deviate of directions X, the deviate and the angular deviation value of Y direction.Deviate in the described processing result report should be mean value.The shape of described mark can be rectangle, circle, triangle or ellipse.The maximum length of the figure of described mark should not surpass 1/3rd of described wafer radius.Described mark should be etched between 2/3rds radiuses and circumference of described wafer.
Experimental data shows that when the wafer that is used to detect was 1, accuracy of detection was 80%; When wafer was 2, accuracy of detection was 93%; When wafer was 3, accuracy of detection was 95%; When wafer was 4, accuracy of detection was 96%; When wafer was 5, accuracy of detection was 98%.It is generally acknowledged that accuracy of detection is more than 98%, meets the high precision alignment standard.
Therefore, in a preferred embodiment of the present invention, when using the inventive method, the wafer of the etching mark that is used to detect is more than 5 or 5, and this moment, accuracy of detection was more than 98%.Deviate in the wherein said processing result report comprises the deviate of directions X, the deviate and the angular deviation value of Y direction.Deviate in the described processing result report should be mean value.The shape of described mark can be rectangle, circle, triangle or ellipse.The maximum length of the figure of described mark should not surpass 1/3rd of described wafer radius.Described mark should be etched between 2/3rds radiuses and circumference of described wafer.
See also Fig. 2, Fig. 2 is the synoptic diagram that the wafer of etching mark is arranged.Wherein the mark 1 on the wafer 2 can be one or more.
In order to improve precision, in another preferred embodiment of the present invention, when using the inventive method, etching is labeled as more than 2 or 2 on the wafer that is used to detect.Wherein, be preferably maximum apart from sum between the described mark, promptly the distance between the adjacent marker equates.Deviate in the described processing result report comprises the deviate of directions X, the deviate and the angular deviation value of Y direction.Deviate in the described processing result report should be mean value.The shape of described mark can be rectangle, circle, triangle or ellipse.The maximum length of the figure of described mark should not surpass 1/3rd of described wafer radius.Described mark should be etched between 2/3rds radiuses and circumference of described wafer.
In the above-described embodiments, if the wafer that is used to detect is more than 5 or 5, then its accuracy of detection can be higher.
See also Fig. 3, Fig. 3 judges the synoptic diagram of many calibration degree of scanning exposure machine for using the inventive method.The deviate of exporting when the corresponding scanning exposure machine of each point on the figure is simulated processed wafer, scanning exposure machine promptly to be measured is with respect to the deviation of the alignment of standard scan exposure machine.The corresponding line of 0 value is an agonic line among Fig. 3, if the point of the deviate of scanning exposure machine correspondence is positioned on 0, illustrating does not have relative deviation, aims at fully.Up and down two bar lines adjacent with 0 value line are early warning line, i.e. Yu Ding deviation allowable value; If the deviate of scanning exposure machine correspondence o'clock between two early warning lines, promptly in predetermined deviation allowed band, then meet alignment criteria.Adjacent with early warning line, be positioned at outer two lines up and down of early warning range for not meeting standard lines, if the point of the deviate of scanning exposure machine correspondence is at early warning line and when not meeting between the standard lines, it aims at the basic symbols standardization, but the detection frequency to this scanning exposure machine should improve, the value of being above standard of guarding against deviations.If the point of the deviate of scanning exposure machine correspondence is positioned at do not meet on the standard lines, or when not meeting beyond the standard lines, then this scanning exposure machine has not met alignment criteria, tackles it and carries out manual check and correction.
That more than introduces only is based on several preferred embodiment of the present invention, can not limit scope of the present invention with this.Any device of the present invention is done replacement, the combination, discrete of parts well know in the art, and the invention process step is done well know in the art being equal to change or replace and all do not exceed exposure of the present invention and protection domain.
Claims (14)
1. a method for detecting calibration degree of scanning exposure machine is characterized in that comprising the following steps: selected scanning exposure machine as standard, and adjusts the precision of the transmission system of described standard scan exposure machine; Use described standard scan exposure machine on wafer, to define predetermined marker graphic, and after etching technics processing, on wafer, form three-dimensional marker graphic; With the described wafer that is carved with mark of scanning exposure machine simulation processing to be measured; Judge the calibration degree of scanning exposure machine to be measured according to deviate in the processing result report of described scanning exposure machine output to be measured and predetermined deviation allowed band.
2. method for detecting calibration degree of scanning exposure machine as claimed in claim 1 is characterized in that: described wafer should be more than 5.
3. method for detecting calibration degree of scanning exposure machine as claimed in claim 1 or 2 is characterized in that: the deviate in the described processing result report comprises the deviate of directions X, the deviate and the angular deviation value of Y direction.
4. method for detecting calibration degree of scanning exposure machine as claimed in claim 1 or 2 is characterized in that: the deviate in the described processing result report should be mean value.
5. method for detecting calibration degree of scanning exposure machine as claimed in claim 1 or 2 is characterized in that: the shape of described mark is rectangle, circle, triangle or ellipse.
6. method for detecting calibration degree of scanning exposure machine as claimed in claim 1 or 2 is characterized in that: the maximum length of the figure of described mark should not surpass 1/3rd of described wafer radius.
7. method for detecting calibration degree of scanning exposure machine as claimed in claim 1 or 2 is characterized in that: described mark should be etched between 2/3rds radiuses and circumference of described wafer.
8. method for detecting calibration degree of scanning exposure machine as claimed in claim 1 or 2 is characterized in that: described mark should be more than 2.
9. method for detecting calibration degree of scanning exposure machine as claimed in claim 8 is characterized in that: should be maximum apart from sum between the described mark.
10. method for detecting calibration degree of scanning exposure machine as claimed in claim 8 is characterized in that: the deviate in the described processing result report comprises the deviate of directions X, the deviate and the angular deviation value of Y direction.
11. method for detecting calibration degree of scanning exposure machine as claimed in claim 8 is characterized in that: the deviate in the described processing result report should be mean value.
12. method for detecting calibration degree of scanning exposure machine as claimed in claim 8 is characterized in that: the shape of described mark is rectangle, circle, triangle or ellipse.
13. method for detecting calibration degree of scanning exposure machine as claimed in claim 8 is characterized in that: the maximum length of the figure of described mark should not surpass 1/3rd of described wafer radius.
14. method for detecting calibration degree of scanning exposure machine as claimed in claim 8 is characterized in that: described mark should be etched between 2/3rds radiuses and circumference of described wafer.
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| CN2007100365301A CN101226338B (en) | 2007-01-17 | 2007-01-17 | Method for detecting calibration degree of scanning exposure machine |
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| CN2007100365301A CN101226338B (en) | 2007-01-17 | 2007-01-17 | Method for detecting calibration degree of scanning exposure machine |
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| CN101226338B true CN101226338B (en) | 2010-09-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109769078A (en) * | 2019-01-16 | 2019-05-17 | 北京五岳鑫信息技术股份有限公司 | A kind of scanner operation method and device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101546720B (en) * | 2009-04-09 | 2013-10-09 | 上海集成电路研发中心有限公司 | Method for detecting residue of photoresist in orifice and corresponding method for measuring strip width of orifice |
| CN108899288B (en) * | 2018-07-20 | 2020-11-13 | 上海华虹宏力半导体制造有限公司 | Wafer mark monitoring method and method for judging alignment position of laser marking machine |
| CN112158797B (en) * | 2020-08-27 | 2023-08-01 | 北京航天控制仪器研究所 | Alignment detection method in wafer bonding process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4929083A (en) * | 1986-06-19 | 1990-05-29 | Xerox Corporation | Focus and overlay characterization and optimization for photolithographic exposure |
| CN1855431A (en) * | 2005-03-31 | 2006-11-01 | 国际商业机器公司 | Semiconductor manufacturing method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4929083A (en) * | 1986-06-19 | 1990-05-29 | Xerox Corporation | Focus and overlay characterization and optimization for photolithographic exposure |
| CN1855431A (en) * | 2005-03-31 | 2006-11-01 | 国际商业机器公司 | Semiconductor manufacturing method |
Non-Patent Citations (1)
| Title |
|---|
| JP特表2004-501516A 2004.01.15 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109769078A (en) * | 2019-01-16 | 2019-05-17 | 北京五岳鑫信息技术股份有限公司 | A kind of scanner operation method and device |
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