CN101225547A - 一种生长室和氮化镓体材料生长方法 - Google Patents
一种生长室和氮化镓体材料生长方法 Download PDFInfo
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- CN101225547A CN101225547A CNA200710176647XA CN200710176647A CN101225547A CN 101225547 A CN101225547 A CN 101225547A CN A200710176647X A CNA200710176647X A CN A200710176647XA CN 200710176647 A CN200710176647 A CN 200710176647A CN 101225547 A CN101225547 A CN 101225547A
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- growth
- gallium
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- gas
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- 239000000463 material Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 36
- 229910002601 GaN Inorganic materials 0.000 title abstract description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract description 4
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 100
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 95
- 239000007789 gas Substances 0.000 claims abstract description 88
- 238000010438 heat treatment Methods 0.000 claims abstract description 68
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000007921 spray Substances 0.000 claims abstract description 6
- 229910052786 argon Inorganic materials 0.000 claims abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 230000000630 rising effect Effects 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 3
- 230000008676 import Effects 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 abstract description 5
- 150000004767 nitrides Chemical class 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002258 gallium Chemical class 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241000255789 Bombyx mori Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN200710176647XA CN101225547B (zh) | 2007-10-31 | 2007-10-31 | 一种生长室和氮化镓体材料生长方法 |
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CN200710176647XA CN101225547B (zh) | 2007-10-31 | 2007-10-31 | 一种生长室和氮化镓体材料生长方法 |
Publications (2)
Publication Number | Publication Date |
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CN101225547A true CN101225547A (zh) | 2008-07-23 |
CN101225547B CN101225547B (zh) | 2010-08-11 |
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CN200710176647XA Expired - Fee Related CN101225547B (zh) | 2007-10-31 | 2007-10-31 | 一种生长室和氮化镓体材料生长方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101845671B (zh) * | 2009-12-22 | 2012-05-23 | 上饶师范学院 | 一种可溶性盐辅助合成纳米晶的方法 |
CN111549375A (zh) * | 2020-05-14 | 2020-08-18 | 华厦半导体(深圳)有限公司 | 一种可量产氮化镓的全立式hpve设备 |
CN115418717A (zh) * | 2022-09-08 | 2022-12-02 | 镓特半导体科技(上海)有限公司 | 多层镓舟结构及立式hvpe反应装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100373553C (zh) * | 2006-03-10 | 2008-03-05 | 中国科学院上海微系统与信息技术研究所 | 一种因干法刻蚀受损伤的氮化镓基材料的回复方法 |
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2007
- 2007-10-31 CN CN200710176647XA patent/CN101225547B/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101845671B (zh) * | 2009-12-22 | 2012-05-23 | 上饶师范学院 | 一种可溶性盐辅助合成纳米晶的方法 |
CN111549375A (zh) * | 2020-05-14 | 2020-08-18 | 华厦半导体(深圳)有限公司 | 一种可量产氮化镓的全立式hpve设备 |
CN115418717A (zh) * | 2022-09-08 | 2022-12-02 | 镓特半导体科技(上海)有限公司 | 多层镓舟结构及立式hvpe反应装置 |
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Publication number | Publication date |
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CN101225547B (zh) | 2010-08-11 |
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Owner name: GAO YING WU SHUAI ZHOU LING Free format text: FORMER OWNER: GAO YING |
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Effective date of registration: 20100719 Address after: 11, 211, building 35, 100083 Qinghua East Road, Beijing, Haidian District Applicant after: Zhang Jianping Co-applicant after: Gao Ying Co-applicant after: Wu Shuai Co-applicant after: Zhou Ling Address before: 11, 211, building 35, 100083 Qinghua East Road, Beijing, Haidian District Applicant before: Zhang Jianping Co-applicant before: Gao Ying |
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Free format text: FORMER OWNER: GAO YING WU SHUAI ZHOU LING Owner name: QINGDAO JASON ELECTRIC CO., LTD. Free format text: FORMER OWNER: ZHANG JIANPING Effective date: 20110506 |
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Free format text: CORRECT: ADDRESS; FROM: 100083 ROOM 211, BUILDING 11, NO. A-35, QINGHUA EAST ROAD, HAIDIAN DISTRICT, BEIJING TO: 266101 2/F, BUILDING 5, HUITE INDUSTRIAL CITY, NO. 177, ZHUZHOU ROAD, LAOSHAN DISTRICT, QINGDAO CITY, SHANDONG PROVINCE |
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Effective date of registration: 20110506 Address after: Whit the industrial city of Zhuzhou road Laoshan District Qingdao city Shandong province 266101 No. 177 No. 5 building two floor Patentee after: QINGDAO JASON ELECTRIC Co.,Ltd. Address before: 11, 211, building 35, 100083 Qinghua East Road, Beijing, Haidian District Co-patentee before: Gao Ying Patentee before: Zhang Jianping Co-patentee before: Wu Shuai Co-patentee before: Zhou Ling |
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Effective date of registration: 20170421 Address after: 243000 Anhui Province Economic and Technological Development Zone Ma'anshan City Baoqing Road No. 399 Patentee after: MAANSHAN JIESHENG SEMICONDUCTOR CO.,LTD. Address before: Whit the industrial city of Zhuzhou road Laoshan District Qingdao city Shandong province 266101 No. 177 No. 5 building two floor Patentee before: QINGDAO JASON ELECTRIC Co.,Ltd. |
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Granted publication date: 20100811 Termination date: 20211031 |