CN101221895B - Method for manufacturing compound material wafers - Google Patents

Method for manufacturing compound material wafers Download PDF

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CN101221895B
CN101221895B CN200810002207.7A CN200810002207A CN101221895B CN 101221895 B CN101221895 B CN 101221895B CN 200810002207 A CN200810002207 A CN 200810002207A CN 101221895 B CN101221895 B CN 101221895B
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base material
donor
nubbin
donor base
layer
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CN101221895A (en
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弗雷德里克·杜蓬
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

Abstract

The invention relates to a method for manufacturing compound material wafers, comprising the steps: providing an initial donor substrate (1), forming a predetermined splitting area (4) in the initial donor substrate (1), attaching the initial donor substrate (1) to a handle substrate (2), and detaching the donor substrate (1) at the predetermined splitting area (4), thereby transferring a layer (6) of the initial donor substrate (1) onto the handle substrate (2) to form a compound material wafer (10). To improve the cost effectiveness of the method the method further comprises depositing a layer (12) onto the remainder (9) of the donor substrate after the detaching step to recover at least partially the thickness of the initial donor substrate (1) and reusing the donor substrate (1) with the deposited layer (12) as initial donor substrate (1) in step a). The invention also relates to electronic, opto-electronic or optical components comprising at least a part of the compound material wafer fabricated according to the method.

Description

The manufacture method of compound material wafers
The application is divisional application, and the application number of its original application is 200510115630.4, and the applying date is on November 8th, 2005, and denomination of invention is " manufacture method of compound material wafers ".
Technical field
The present invention relates to the manufacture method of compound material wafers.
Background technology
By document US2003/0153163, the known method that has use SmartCut technology material layer to be transferred to operation (handle) base material from donor base material.Described known method comprises the step that forms donor base material by bonding the first wafer, and this layer will be transferred on support base material from described the first wafer.According to US2003/0153163, owing to can repeatedly carrying out repeatedly transfer operation by same initial the first wafer, until the full depth of the first wafer exhausts, therefore forming this donor wafer is favourable for shifting expensive material layer.
But there is following point in described known method.Because donor base material is to form through bonding wafer by two, its thickness, particularly for initial transfer several times, is greater than at standard technology conventionally for example for the manufacture of the thickness that covers the donor wafer in the SmartCut technical matters of insulator wafer of silicon.Thereby, in shifting process, for operating and support the equipment of donor wafer, must be particularly suitable for the weight and the thickness that increase, or support base material need to reduce its thickness especially.But both of these case all needs very expensive self adaptation step.In addition, in manufacture process, the thickness of donor wafer constantly changes, and its intensity of variation depends on the number of carried out transfer.Therefore process equipment and operating equipment need to carry out designing to deal with the condition of variation especially.Thereby equipment need to carry out special design and therefore become more expensive.
Summary of the invention
Thereby the object of this invention is to provide the manufacture method of compound material wafers, the method can overcome the problems of the prior art, so that compound material wafers can be used standard wafer process equipment to manufacture.
This object is achieved by the manufacture method of compound material wafers of the present invention.Method of the present invention comprises the following steps: initial donor substrate a) is provided, b) in initial donor substrate, form predetermined Disengagement zone, c) initial donor substrate is attached in handle substrate, and d) in predetermined Disengagement zone, described donor base material is split, thereby the layer in initial donor substrate is transferred in handle substrate to form compound material wafers, it is characterized in that e) after splitting step by a nubbin that is deposited upon donor base material using recover at least in part the thickness of initial donor substrate and f) reuse the donor base material with sedimentary deposit as step the initial donor substrate in a).
Due to not bonding with additional support base material, thereby the donor base material using in method of the present invention is thinner than the donor base material using in prior art processes.In addition, due to the existence of sedimentary deposit, the varied in thickness of donor base material is little, can use standard wafer process equipment, makes not need to use consuming time and expensive adaptivity or special operating equipment.Thereby technique of the present invention is got up more cheap than process implementing of the prior art.
Before reusing the nubbin of donor base material, can on the surface of nubbin of donor base material that will be attached to handle substrate, carry out extra pre-shaping step.This finishing for example can be undertaken by polishing.
Carrying out deposition step e) before, step a)～d) preferably at least repeat twice, wherein the step repeating a) in by the fractionation nubbin of donor base material again as initial donor substrate.Because less step is corresponding to faster thereby more cheap manufacture method, so repeat to implement the presedimentary part of this technique, contribute to further to optimize this technique.
Preferably, repeating step a)～d) until initial donor substrate reaches predetermined minimum thickness.The upper limit of number of repetition can be by the character that makes base material, for example mechanical strength, and the thickness of the nubbin of the donor base material while starting to decline determines, or relevant to can suitably bring into play the character of operating equipment of function with the specific minimum thickness of needs.Due to described repetition, therefore can further optimize whole technique, can keep quality and the productive rate of higher compound material wafers simultaneously.
According to a preferred implementation, the layer of step in e) can deposit homoepitaxy.Method of the present invention is advantageous particularly for the expensive donor base material of crystalline material normally.By by the regrowth of donor base material homoepitaxy ground to its original depth or exceed its original depth, the number of times that can recycle due to donor base material has exceeded and has exhausted the necessary number of times of initial donor substrate thickness, thereby in fact this technique become irrelevant with the availability of donor base material.In this article, homoepitaxy refers to that sedimentary deposit is consisted of the material with identical crystallographic properties identical with the material of initial donor substrate.
Preferably, step e) in homoepitaxy layer can be provided by metal organic chemical vapor deposition (MOCVD) method, gaseous mixture phase epitaxy (HVPE) method or molecular beam epitaxy (MBE) method, thereby compared with dislocation density in initial donor substrate, in homoepitaxy layer, realize the dislocation density of improving, be particularly less than 1 × 10 7/ cm 2dislocation density, be especially less than 1 × 10 6/ cm 2dislocation density.At growth course Dislocations, tend to rest on specified level, make the material of extraneous growth present lower dislocation density.Thereby the quality of donor base material becomes better, thereby compared with the transfer layer being obtained by commercially available standard donor substrates, it is better that the quality of described transfer layer also becomes.
Preferably, step e) is included in the face side relative with face side that split nubbin of donor base material a layer is provided.When using polar donor substrates, mean that two main surfaces of this base material have different character, common situation is that epitaxial growth can well be controlled on a surface, and is not like this for another surface.The Free Surface of the transfer layer of material compound wafer should be corresponding to such surface: this surperficial polarity allows the controlled growth of other epitaxial loayer, because may need described other epitaxial loayers in the further procedure of processing of manufacturing microelectronics or optoelectronic component.Therefore the surface that, is attached to the lip-deep transfer layer of handle substrate will have the second polarity.So having, the surface of the nubbin of the donor base material splitting cannot well control epitaxially grown polarity.Therefore the deposition of extra play is preferably carried out at described opposite side, thereby can carry out controlled homoepitaxy growth at this opposite side, makes the quality of sedimentary deposit good.
Preferably, in implementation step e) before, the face side splitting can have protective layer, particularly uses oxide and/or nitride layer to be used as protective layer.This protective layer advantageously can protect the nubbin of donor base material to avoid the pollution such as metal or particle etc., particularly on the opposite side of wafer in sedimentary deposit process.This protection can improve or maintain the quality of compound material wafers.
Advantageously, the method can be included in and reuse the donor base material with this layer as before initial donor substrate, removes other step of protective layer.Finally removing step can be with extra polishing step or cleaning.Thereby when the protectiveness face side of donor base material is attached in handle substrate, the donor base material reusing has such surface nature, make to carry out bonding and wherein to carry out bonding place surface quality very high.
Advantageously, the face side of the nubbin that the donor base material of this layer is set in e) in step can be carried out to polishing and/or clean before this layer of deposition.This will improve the quality of sedimentary deposit, when sedimentary deposit is homoepitaxy layer this by advantageous particularly, and in the stage below of manufacturing process used as transfer layer.
The method is particularly advantageous for a kind of donor base material being selected from gallium nitride (GaN), carborundum (SiC), germanium (Ge), aluminium nitride (AlN) or diamond.These base materials are extremely important and very difficult in electronic application obtains good quality with reasonable prices.By said method is used for to such material, can obtain the material compound wafer with better quality more cheap than the bulk material of himself.
Preferably, the handle substrate of using is monocrystal material or polycrystalline material, is particularly selected from the one in GaAs (GaAs), zinc oxide (ZnO), carborundum (SiC) or aluminium nitride (AlN).Preferably use the handle substrate with the thermal coefficient of expansion similar to donor substrate material, further to improve the quality of material compound wafer.In order further to reduce costs, compared with monocrystal material, it is favourable using polycrystalline material.In more common situation, handle substrate also can be formed by silicon (Si), glass or ceramic material.
According to another form, handle substrate can have insulating barrier, particularly silicon dioxide (SiO 2) or silicon nitride (Si 3n 4) etc. insulating barrier, or there is conducting shell by being attached on the surface of donor base material.This extra play has also increased the quantity of the different compound material wafers that are applicable to microelectronics or optoelectronic various application.
The invention still further relates to the electronics, optoelectronics or the optical element that at least comprise the compound material wafers parts of manufacturing according to said method.
Particularly, the present invention relates to a kind of donor base material through finishing, the described nubbin that comprises initial donor substrate through the donor base material of finishing, described nubbin has face side and the relative face side that provides sedimentary deposit of the fractionation of carrying out layer, wherein, after splitting step, sedimentary deposit is deposited on the nubbin of described initial donor substrate, to recover at least in part the thickness of nubbin of described initial donor substrate, wherein, described sedimentary deposit has the material identical with described nubbin, but the crystal quality of wherein said sedimentary deposit is higher than the crystal quality of described nubbin.
Accompanying drawing explanation
The specific embodiment of the present invention is by by following clearer with reference to the detailed description of accompanying drawing, wherein
Fig. 1 has shown the schematic diagram of implementing according to the embodiment of the present invention the step of the manufacture method of compound material wafers,
Fig. 2 a and 2b have shown the schematic diagram of the donor base material with two kinds of dissimilar sedimentary deposits,
Fig. 3 has shown the schematic diagram of implementing second embodiment of the invention the step of the manufacture method of compound material wafers.
Embodiment
The execution mode of the new manufacture method of the compound material wafers of Fig. 1 and Fig. 2 is based on SmartCut technology.But any technique that other is suitable for manufacturing compound material wafers and comprising predetermined Disengagement zone is also suitable for.
Fig. 1 a illustrates initial donor substrate 1, is for example similar to, and has preliminary dimension, particularly by the wafer forming as carbonization gallium (GaN), carborundum (SiC), germanium (Ge), aluminium nitride (AlN) or diamond.These materials are extremely important in microelectronics and optoelectronics application, but are difficult to manufacture thereby more expensive.Here it is why according to the present invention by initial donor substrate 1 for the thin layer of this donor being transferred to the reason that becomes the wafer that material is more cheap in handle substrate 2 as shown in Figure 1 b.Preferred operations base material 2 has the thermal coefficient of expansion similar to the material of initial donor substrate 1.In the situation of GaN, for example, suitable material can be GaAs (GaAs), zinc oxide (ZnO), carborundum (SiC) or aluminium nitride (AlN).For these wafers, material must not be monocrystalline, and polymorphic wafer also can be used.
In another version, before adhesion step as shown in Figure 1 d, can be by insulating barrier, particularly silicon dioxide (SiO 2) or silicon nitride (Si 3n 4) insulating barrier or conducting shell be arranged on carrying out on bonding surface 7 with donor base material 1 of handle substrate 2.
For the layer of donor base material 1 being transferred in handle substrate 2, must be in the predetermined Disengagement zone of the interior manufacture of initial donor substrate 1.The SmartCut technology of employing as shown in Fig. 1 c, this is by with predetermined close and for example hydrogen ion of energy injection atom species 3(or other inert gas), make in donor base material 1, to produce predetermined Disengagement zone 4 by injected atom species 3 and realize.Predetermined Disengagement zone 4 is substantially parallel with the first type surface 5 of donor base material 1.Between this first type surface 5 and predetermined Disengagement zone 4, manufacture the layer 6 being transferred in following operation in handle substrate 2.
Fig. 1 d illustrates the next step of this technique, on a first type surface 7 by the first type surface of donor base material 15 being adhered to handle substrate, and initial donor substrate 1 is attached in handle substrate 2.Before bonding, prepared like this surface to be contacted 5 and 7 and made them can be bonded to each other.
Then donor operationalization compound 8 put into stove (not shown) and heat so that 4 embrittlement of predetermined Disengagement zone, this finally can cause the nubbin 9 of donor base material 1 to split from the compound material wafers 10 consisting of handle substrate 2 and transfer layer 6.Except heat energy is provided, embrittlement and split also can be by any type of other energy is provided, the combination of for example mechanical energy or heat energy and mechanical energy and carrying out.
These two products, the nubbin 9 of compound material wafers 10 and initial substrate is as shown in Fig. 1 e and Fig. 1 f.In further first being processed, material compound wafer 10 can be accepted final surface treatment, for example polishing and/or clean.
For Fig. 1 f, the nubbin 9(Fig. 1 that can reuse now donor base material f) can restart with the step shown in Fig. 1 a as initial donor substrate 1 and this technique, or carries out as further discussed below the deposition of layer.Finally, before reusing, on the surface 11 splitting, can pass through, for example, at the implantation step shown in following Fig. 1 c and Fig. 1 d and the polishing before adhesion step, repair.If suppose that the transfer of each layer and finishing can cause removing the thickness of approximately 5 μ m, and from the main body of donor base material 1, remove embrittlement that approximately 50 μ m can cause base material (, reach the degree of the quality that cannot guarantee the transfer layer 6 that is suitable for application), the repeating to re-use of the nubbin 9 of donor base material can be carried out several, for example, can reach 10 times.
Thereby, when reached donor base material nubbin 9 minimum thickness or for the good function of guaranteeing technique during for the necessary minimum thickness of operating equipment, the method is carried out with the step shown in Fig. 1 g, is about to layer 12 and is deposited on the nubbin 9 of donor base material.The thickness 13 of sedimentary deposit 12 makes to recover at least partly the thickness of initial donor substrate 1, so that this donor base material 14 through finishing can be used as initial donor substrate 1 as shown in Figure 1a again.
According to a kind of version, as shown in Figure 2 a, sedimentary deposit 12' by can fast deposition material in the face side 15 relative with the surface splitting 11 of the nubbin 9 of base material form.Thereby according to this version, emphasis is to make the nubbin 9 of donor base material return to fast the thickness that is enough to reuse.Thereby the material of sedimentary deposit 12' is not must be identical with the material of initial donor substrate 9.But, if select the material of layer 12' to make it identical with donor base material 9, can select growth conditions so that the speed of growth obtains optimization.The crystal quality of extra play 12' may be not enough to as the transfer layer 6 using below in this case.In this case, once initial donor substrate 1 is consumed completely, in technique, need to introduce new donor base material wafer 1.
According to version as shown in Figure 2 b, sedimentary deposit 12'' consists of the material identical with the nubbin 9 of donor base material, in addition, be homoepitaxy growth, thereby the crystal quality of layer 12'' at least can be suitable with the crystal quality of base material nubbin 9.Layer 12'' can be deposited on surface 11 or on surface 15.Sedimentary deposit 12'' in this case, need in technique, not introduce new donor base material 1, because can be used as transfer layer 6 after a while.Use MOCVD, HVPE or MBE method, even may obtain crystal quality than the better layer of the initial quality of donor base material 1 12''.Particularly, when the dislocation density of initial donor substrate is greater than 1 × 10 conventionally 7/ cm 2time, may obtain the dislocation density that is less than this value.
In the situation of Fig. 2 a, adhering between the donor base material 14 through repairing and handle substrate 2 will be undertaken by surface 11.In the situation of Fig. 2 b, adhere to and can be undertaken by two surfaces.
Fig. 3 illustrates the second execution mode of manufacture method of the present invention, and wherein step is as shown in Figure 1 g replaced by the operation shown in Fig. 3 a～3c.Reference numeral identical with the Reference numeral using in Fig. 1 parts and feature and Fig. 1 consistent, thereby explain no longer in detail, but their explanation is hereby incorporated by.
According to the manufacturing step shown in Fig. 3 a, protective layer 30 is deposited on the surface 11 of nubbin 9 of the donor base material splitting, to protect surface 11 to avoid polluting or mechanical damage.Suitable protective material comprises nitrogen dioxide or silicon nitride (SiO 2or Si 3n 4).
In step shown in Fig. 3 b, layer 12 is deposited in apparent surface's side 15 of nubbin 9 of donor base material.This step is described and narrates identical with Fig. 1 g's to the first execution mode.
The following step shown in Fig. 3 c comprises removes protective layer 30.Then the donor base material 14 through finishing of the nubbin that comprises donor base material 9 and sedimentary deposit 12 is used as to initial donor substrate 1 again.Removing of final protective layer 30 can be carried out together with the extra polishing step on surface 11 and/or cleaning.
According to another version, after layer 12 growth, the surface 16 of extra play 16 can have other diaphragm this surface with the donor base material 14 of protection through repairing in the operation as shown in Fig. 1 a～1f.
Below, the example of the compound wafer with comprising the GaN layer through shifting is described in detail the application of manufacture method of the present invention.The various versions that hereinafter no longer make an explanation stand good at any time, thereby introduce by reference.
Be provided as the GaN wafer of initial donor substrate 1, be provided as the GaAs wafer with same diameter of handle substrate as handle substrate 2.
GaN wafer, in its hexagonal system structure, has the first type surface of polarity, and a surface exists Ga atom (following Ga surface), and another surface exists N atom (following N surface).For transfer GaN layer, conventionally need to be using Ga surface as Free Surface, thereby the N of GaN wafer surface is bonding with handle substrate 2.
Before starting transfer process, polishing is carried out to remove the defect layer that conventionally extends beyond 2 μ m～4 μ m in the N surface of GaN donor base material 1.These defect layers are to be produced by the resilient coating once forming for GaN wafer initial.This can complete by polishing.But there are not these inconvenience, the base material disclosed in WO03/017357 in other GaN base material.
Predetermined Disengagement zone 4 is about 1 × 10 by dosage 15at/cm 2～1 × 10 18at/cm 2with energy be about 20keV～200keV H ion Implantation and obtain (processing step as shown in Fig. 1 c).Adopt 5 × 10 16at/cm 2dosage and the energy of 60keV, the degree of depth of predetermined Disengagement zone is about hundreds of nanometer apart from surface.Before injecting, can deposit protective layer (SiO 2or Si 3n 4) to avoid GaN layer contaminated and/or be formed with the layer that helps to be adhered to handle substrate 2.
According to step 1d, GaN base material 1 is bonding with handle substrate GaAs2.Bonding in order to complete, surface 5 and the surface 7 on the representative N surface that will contact with each other must be smooth on atomic scale.This can carry out suitable polishing by the N surface to GaN base material realizes, and makes can obtain the roughness lower than 0.3nm RMS (root-mean-square value) for the scanning of the size that adopts 5 μ m × 5 μ m.
Then donor operationalization compound 8 is put into stove and at the temperature of approximately 200 ℃～500 ℃, carried out the heat treatment of approximately 1 hour～6 hours to weaken predetermined Disengagement zone until split.In addition, can adopt mechanical energy, as introduced blade, or adopt the combination of heat energy and mechanical energy.
After carrying out for example 2～5 transfer operations by initial GaN donor base material 1, the nubbin 9 of GaN donor base material is introduced in epitaxial reactor, at this, by MOCVD, HVPE or MBE method, the layer 12 of GaN is deposited on Ga surface 15 with the form of extension.Growth temperature is about 700 ℃～1100 ℃.Depend on application, sedimentary deposit 12 can adulterate in addition.The gross thickness of deposition can be up to hundreds of nanometer, is ideally to select this thickness to recover the original depth of initial GaN donor base material 1.Depend on growth conditions, can obtain dislocation density compared with primordium material better or worse GaN layer.
Depend on current needed surface, certainly can suitably provide/remove the protective layer on Ga surface or N surface.Except the finishing on Ga surface, can carry out extension preparation process with suitable CMP and/or cleaning.
Once deposit GaN layer 12, can carry out the SmartCut circulation of repetition above-mentioned steps.

Claims (9)

1. the donor base material through finishing, the described nubbin (9) that comprises initial donor substrate (1) through the donor base material of finishing, described nubbin (9) have carry out layer fractionation a face side (11) with provide sedimentary deposit (the relative face side (15) of 12 "), wherein, after splitting step, by sedimentary deposit, (12 ") are deposited on the nubbin (9) of described initial donor substrate (1), to recover at least in part the thickness of nubbin (9) of described initial donor substrate (1), wherein, (12 ") have the material identical with described nubbin (9) to described sedimentary deposit, but (crystal quality of 12 ") is higher than the crystal quality of described nubbin (9) for wherein said sedimentary deposit.
2. the donor base material through finishing as claimed in claim 1, (12 ") are homoepitaxy layer to wherein said sedimentary deposit.
3. the donor base material through finishing as claimed in claim 1 or 2, (12 ") have the thickness up to hundreds of nanometer to wherein said sedimentary deposit.
4. the donor base material through finishing as claimed in claim 1 or 2, (dislocation density in 12 ") is better than the dislocation density in described nubbin (9) to wherein said sedimentary deposit.
5. the donor base material through finishing as claimed in claim 1 or 2, also comprises protective layer (30) in the face side (11) of the nubbin (9) of the described initial donor substrate (1) splitting through the donor base material of finishing.
6. the donor base material through finishing as claimed in claim 1 or 2, the nubbin (9) of wherein said initial donor substrate (1) consists of GaN.
7. the donor base material through finishing as claimed in claim 6, the relative face side (15) of wherein said nubbin (9) is Ga surface.
8. the donor base material through finishing as claimed in claim 7, wherein said sedimentary deposit (adulterate by 12 ").
9. the donor base material through finishing as claimed in claim 6, wherein carries out the surface roughness of face side (11) of the fractionation of layer for adopting the scanning of size of 5 μ m × 5 μ m lower than 0.3nmRMS.
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