JPH1174209A - Manufacture of semiconductor substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a SOI substrate having a thick semiconductor layer, without the use of an ion implantation apparatus requiring a high energy output. SOLUTION: An ion implantation layer 6 is formed to a predetermined depth by ion implantation of hydrogen ions in a single-crystal silicon substrate 5 for a semiconductor layer, and an amorphous silicon film 7 of a desired thickness is formed thereon. An oxide film 3 is formed on the surface of a single- crystal silicon substrate 2 as a supporting substrate and is bonded with the silicon substrate 5. Through a separation step, an amorphous silicon film 7 and a single-crystal silicon film 4a are formed on the silicon substrate 2 via an oxide film 3 provided between these films and the silicon substrate 2. After that, through a solid phase growth step, the amorphous silicon film 7 is grown by a solid-phase growing, thus forming a single-crystal silicon film 4. The surface is polished as required, and a SOI substrate 1 is thus provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor substrate having a semiconductor layer for forming an element in an insulated state on a support substrate.

[0002]

As a semiconductor substrate in which a single-crystal semiconductor layer for element formation is formed on a substrate with an insulating film interposed therebetween, for example, an SOI (silicon single crystal) having a structure in which a silicon single crystal is provided as a semiconductor layer Silicon On Insulator) substrate. This has a structure in which an oxide film as an insulating film is formed on a silicon substrate serving as a substrate, and a single crystal silicon film is formed thereon. This eliminates the necessity of separately performing an insulation separation step, and has a good separation performance, and can form an integrated circuit by forming elements on a silicon single crystal film with a high degree of integration.

[0003] In this case, there are various conventional methods for manufacturing a silicon single crystal film provided on an SOI substrate. Among them, there is a semiconductor thin film manufacturing method which is manufactured through the following three steps. The technology is disclosed in Japanese Patent Laid-Open No. 5-211128.
Is disclosed. Hereinafter, the manufacturing method will be briefly described.

First, as a first step, hydrogen or a rare gas is ionized into a semiconductor substrate, and accelerated and implanted with a predetermined implantation energy so that the implanted ions are distributed at a predetermined depth from the surface of the semiconductor substrate. To form an ion implantation region. Next, as a second step, a supporting substrate formed of at least one rigid material is bonded to the surface of the semiconductor substrate on the side where the ions are implanted by a bonding method or the like. In this case, it is preferable that an insulating film such as an oxide film is formed in that a semiconductor substrate can be used as the supporting substrate and an SOI substrate is finally formed.

Next, as a third stage, a heat treatment is performed in a state where the semiconductor substrate and the supporting substrate are bonded,
Separated so that the semiconductor substrate and the thin film part are separated with the microvoid part formed in the ion implantation region as a boundary,
An SOI substrate having a structure in which a silicon single crystal film is bonded over a supporting substrate with an insulating film interposed therebetween is formed.

Actually, since the peeled surface has irregularities of about several nm, the peeled surface is polished and etched to finish the silicon single crystal film flat and to have a predetermined thickness ( The thickness of the SOI substrate is adjusted to, for example, 0.1 μm.

In the above-mentioned technique, the principle is that a defect layer is formed in an ion-implanted region formed in a semiconductor substrate and separation is performed. Therefore, the thickness dimension of a single-crystal silicon film to be formed is as follows. It is set according to the level of the ion implantation energy for controlling the depth of the ion implantation region. However, in this case, for example, in order to make the single crystal silicon film have a thickness of 1 μm or more,
As the acceleration energy of hydrogen ions to be implanted increases (for example, acceleration energy of about 1 MeV is required when the film thickness is 13.5 μm), an ion implanter with high energy and large current is required. .

Therefore, in reality, to perform such ion implantation, a high energy output ion implantation apparatus is required, which makes the apparatus expensive, and requires a large amount of electric power to perform the ion implantation processing. Therefore, there is a problem that the running cost is increased. In other words, the thickness of the single crystal silicon film that can be formed is restricted by the performance of the ion implantation apparatus used.

In the above-described manufacturing method, the surface of the semiconductor substrate may be damaged in the ion implantation step,
Since the mixing of oxygen and heavy metal occurs due to the knock-on phenomenon, particularly in the case of manufacturing a thick-film SOI substrate, a portion formed by peeling off the ion-implanted layer through this ion-implantation step and forming an upper portion thereof When using as a single-crystal silicon film, there is a great problem that crystal quality as a single-crystal film for element formation is degraded or the yield is reduced. Further, in the conventional method as described above, a defect area such as a pit or a void is easily generated on the surface of the SOI substrate, and this also poses a problem in yield and quality.

The present invention has been made in view of the above circumstances, and has as its object to form a semiconductor substrate having a thick semiconductor layer by using an ion implantation method to increase the thickness of the semiconductor layer. It is possible to form a defect layer for separation easily and inexpensively as compared with a case where a defect layer is formed in a deep region from the surface by, for example, and to reduce damage to the semiconductor layer as much as possible. It is to provide a manufacturing method.

[0011]

According to the first aspect of the present invention, in the step of forming an ion-implanted layer, an ion-implanted layer is formed by performing ion implantation to a predetermined depth from the surface of the semiconductor layer substrate. In the step of forming a porous film, a semiconductor amorphous film is formed on the surface on which the ion-implanted layer is formed, and thereafter, the substrate is bonded to a supporting substrate in a bonding step, and heat treatment is performed in a peeling step, thereby supporting the semiconductor substrate. The substrate is peeled off in a state where the amorphous film portion is insulated on the substrate and the semiconductor layer is provided on the amorphous film portion.

The semiconductor substrate formed as described above is then subjected to a heat treatment so that the amorphous film can be recrystallized using the semiconductor layer as a nucleus to form a semiconductor layer. As a result, the thickness of the semiconductor layer as a whole can be obtained by adding the thickness of the amorphous film.

Therefore, it is possible to form a semiconductor layer having a desired film thickness by performing an ion implantation step using an ordinary ion implantation apparatus without performing ion implantation at a high energy in the ion implantation layer forming step. become able to. In addition, heavy metal contamination and oxygen mixed into the semiconductor layer which are generated by the ion implantation can be minimized, and pits and voids can be eliminated when the amorphous film is recrystallized. become.

According to the second aspect of the present invention, in the step of forming an ion-implanted layer, an ion-implanted layer is formed by performing ion implantation to a predetermined depth from the surface of the substrate for a semiconductor layer. A state in which a semiconductor amorphous film is formed in an insulated state on the support substrate side, and thereafter, bonding is performed with the support substrate in a bonding step, and heat treatment is performed in a separation step, thereby forming an amorphous film on the support substrate. Is peeled in a state where the semiconductor layer is provided with the surface of the substrate as an adhesive surface. Thereby, the same effect as described above can be obtained.

According to the third aspect of the present invention, the amorphous film formed on the support substrate as described above is subjected to a heat treatment in a peeling step or a subsequent step, thereby forming a semiconductor formed on the amorphous film. Recrystallization can be achieved by using the layer as a nucleus, so that a semiconductor layer having a desired film thickness can be formed by a simple process regardless of the implantation energy level of the ion implantation apparatus. . In addition, by adopting such a manufacturing method, it is possible to form a semiconductor layer which is not damaged as much as possible by minimizing a semiconductor layer which is damaged by performing ion implantation in the ion implantation layer forming step. The pits and voids can be recrystallized and eliminated by the phase growth.

According to the fourth aspect of the present invention, in the step of forming an ion-implanted layer, an ion-implanted layer is formed by performing ion implantation to a predetermined depth from the surface of the substrate for a semiconductor layer. On the other hand, the side of the ion implantation layer of the substrate for the semiconductor layer is bonded, and then, in a separation step, a heat treatment is performed on the substrate for the semiconductor layer and the supporting substrate to form a semiconductor layer at the defect layer for separation formed by the ion implantation layer. Forming a semiconductor layer by peeling the substrate for use, forming an amorphous semiconductor film on the semiconductor layer formed on the support substrate in the amorphous film forming step, and forming a semiconductor amorphous film in the solid phase growing step. The semiconductor layer having a desired thickness can be formed by crystallizing the solid film by solid phase growth using the semiconductor layer as a nucleus. With this, the same effect as described above can be obtained.

According to the fifth aspect of the present invention, in the amorphous film forming step, the semiconductor amorphous film is formed by the plasma CVD method, so that the semiconductor amorphous film can be formed without employing a special step. Thus, a semiconductor substrate having the above-described configuration can be obtained.

According to the sixth aspect of the present invention, a polishing step is provided, and the surface of the semiconductor layer peeled off in the peeling step is polished, so that minute unevenness existing on the peeled surface is smoothly finished to form an element. A semiconductor substrate having a suitable surface can be obtained.

According to the seventh aspect of the present invention, in the step of forming the ion-implanted layer, the thickness of the semiconductor layer becomes a thickness necessary for a semiconductor layer serving as a nucleus for solid-phase growth of a semiconductor amorphous film. Since the ion-implanted layer is formed to the depth dimension, the ion-implanted layer can be formed without increasing the energy of ion implantation by setting the depth of the ion-implanted layer as shallow as possible. A reduced semiconductor layer can be obtained.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION

(First Embodiment) Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. FIG.
(F) is an SOI which is a semiconductor substrate according to the present invention.
The substrate 1 is shown in a schematic cross section. The structure is such that a silicon oxide film 3 as an insulating film is formed on a single crystal silicon substrate 2 as a supporting substrate, and a single oxide film 3 as a semiconductor layer for element formation is formed thereon. Provided with a crystalline silicon film 4,
Thus, it is formed as an SOI (Silicon On Insulator) structure. In this case, the single crystal silicon film 4 is formed with a thickness of 10 μm or more.
Such an SOI substrate 1 is suitable for forming, for example, a power element or an element such as a surface micromachine having a structure in which a microactuator is provided on the surface of the single crystal silicon film 4.

Next, a method of manufacturing the SOI substrate 1 will be described. As shown in FIG. 1, the manufacturing process includes an ion-implanted layer forming process P1, an amorphous silicon film forming process P
2, an oxide film forming step P3, a bonding step P4, a peeling step P5, a solid phase growth step P6, and a polishing step P7.

First, in the ion-implanted layer forming step P1, hydrogen (proton) or a rare gas is ion-implanted into the surface of a single-crystal silicon substrate 5 serving as a semiconductor layer substrate with an oxide film formed thereon. Then, the ion implantation layer 6 is formed at a predetermined depth (see FIG. 2A). in this case,
For example, the implantation depth of the ion implantation is 2 μm or less. Thereafter, the oxide film formed on the surface is removed by wet etching or the like.

Next, in an amorphous silicon film forming step P2 which is an amorphous film forming step, the surface of the single crystal silicon substrate 5 on which the ion implantation layer 6 is formed is made of amorphous silicon as a semiconductor amorphous film. A film 7 is formed (see FIG. 3B). In this case, in forming the amorphous silicon film 7, for example, a method such as a plasma CVD method is used, and the film thickness is substantially equal to the film thickness of the single crystal silicon film 4 finally required as the semiconductor substrate 1. The thickness is set so as to be thick (for example, about 10 μm).

Subsequently, in an oxide film forming step P3, an oxide film 3 is formed on the surface of the single crystal silicon substrate 2 as a supporting substrate by a method such as thermal oxidation, and then, in a bonding step P3.
In 4, the single-crystal silicon substrate 5 on which the amorphous silicon film 7 is formed and the single-crystal silicon substrate 2 on which the oxide film 3 is formed are bonded (see FIG. 4C). In this case, prior to the bonding, the surfaces of the single-crystal silicon substrates 2 and 5 are subjected to a hydrophilic treatment, for example, using sulfuric acid (H
Mixture of ₂ SO ₄₎ and hydrogen peroxide _{(H 2 O 2) (H} 2
Cleaning with SO ₄ : H ₂ O ₂ = 4: 1) and pure water cleaning are sequentially performed, and thereafter, the amount of moisture adsorbed on the substrate surface by spin drying is controlled. Thereby, the single-crystal silicon substrate 1
When the bonding surfaces of the base 5 and the base silicon substrate 12 are brought into close contact with each other, they are bonded by hydrogen bonds of silanol groups formed on the respective surfaces and water molecules adsorbed on the surfaces.

In the subsequent peeling step P5, the single crystal silicon substrates 2 and 5 in the bonded state are
By performing heat treatment at a temperature in the range of up to 600 ° C., the ion implantation layer 6 is peeled off as a peeling defect layer to form a single-crystal silicon film 4a (see FIG. 4D). Further, following the heat treatment for the separation, in the solid phase growth process P6,
In order to grow the amorphous silicon film 7 in the solid phase and to increase the bonding strength between the two bonded single crystal silicon substrates 2 and 5, the temperature is set to 1100 ° C. or more, for example, 1150 ° C.
Heat treatment is performed for about 60 minutes. As a result, the amorphous silicon film 7 is entirely recrystallized with the single crystal silicon film 4a formed by peeling as a nucleus, and the single crystal silicon film 4 as a semiconductor layer is formed. Fig. (E).

It should be noted that, in addition to the case where each of the heat treatments in the peeling step P5 and the solid phase growth step P6 is divided into two stages as described above, the heat treatment can be performed by a single heat treatment for the purpose of simplifying the steps. In this case, the heat treatment temperature is, for example, 11
The temperature is preferably at least 00 ° C., more preferably at about 1150 ° C. for about 60 minutes, so that the bonded single-crystal silicon substrates 2 and 5 can be separated and the amorphous silicon layer 7 can be grown in a solid phase.

Since the peeling defect layer formed in the ion implantation step P1 has a very thin range with respect to the ion-implanted layer 6 formed in the ion implantation step P1, the peeled surface has a surface roughness of several nm or less. A flat surface can be easily formed by the subsequent polishing step P7. As a result, it is possible to obtain the SOI substrate 1 in which the single-crystal silicon film 4 having a desired thickness is formed on the single-crystal silicon substrate 2 with the oxide film 3 interposed therebetween (see FIG. 4F).

In this case, in the polishing step P7, in addition to flattening and smoothing the peeled surface, polishing may be performed so as to remove the portion of the single crystal silicon film 4a formed by the peeling. This is for the purpose of removing the damage generated in the ion implantation step P1 in the surface layer of the single crystal silicon substrate 5 as described above, and this surface layer is formed by solid phase growth using the amorphous silicon film 7 as the single crystal silicon film 4. Since it functions as a nucleus for the removal, it can be formed as a single-crystal silicon film 4 without damage by removing it as necessary.

In the above-described case, when obtaining the SOI substrate 1 formed in the present embodiment, the single-crystal silicon substrate 5 is usually used for forming a semiconductor device in order to ensure the quality of the single-crystal silicon film 4a. It is desirable to use a product wafer in which the impurity concentration is controlled to a constant value and the crystallinity is ensured as in the case of the substrate, whereas the single crystal silicon substrate 2 as a supporting substrate to be bonded is interposed via an oxide film 3. It is sufficient to perform the function as a substrate for holding the single crystal silicon film 4 by using the dummy wafer, and the cost can be reduced by using a dummy wafer whose impurity concentration is not controlled.

As a result, the single crystal silicon substrate 5
Since the thickness dimension required for manufacturing the OI substrate 1 is the thickness dimension required for forming the single-crystal silicon film 4a, only a very thin layer is consumed.
Therefore, by performing a flattening process such as polishing on the surface on the peeling surface side of the portion remaining after the peeling, the portion can be repeatedly and repeatedly used for manufacturing another SOI substrate 1 ( Recycling), resources can be effectively used, and costs can be reduced as a whole.

According to this embodiment, the amorphous silicon film 7 is formed after the ion implantation layer 6 is formed on the single-crystal silicon substrate 5, and the amorphous silicon film 7 is bonded to and separated from the support substrate 2. The single-crystal silicon film 4 is formed by peeling the single-crystal silicon film 4a through the amorphous silicon film 7 to recrystallize the amorphous silicon film 7 to form the single-crystal silicon film 4. The crystalline silicon film 4 can be formed without using a high energy output ion implantation apparatus.

Further, by polishing the peeled surface in the polishing step after the solid phase growth is performed, it is possible to remove the portion of the single crystal silicon film 4a as a layer damaged or contaminated by ion implantation, It is possible to obtain the SOI substrate 1 having a configuration including the single crystal silicon film 4 having excellent quality.

According to the present embodiment, the SOI substrate 1
Since the single-crystal silicon substrate 5 for forming the single-crystal silicon film 4 is also very thin in one use,
The single-crystal silicon substrate 5 can be used over and over again, and a high-quality single-crystal silicon substrate 2 as a support substrate for the SOI substrate 1 is not required. You can plan.

(Second Embodiment) FIGS. 3 and 4 show a second embodiment of the present invention. The difference from the first embodiment is that the amorphous silicon film 7 is simply used as a supporting substrate. It has just been formed on the crystalline silicon substrate 2 side.

That is, in this embodiment, the single-crystal silicon substrate 5, which is a substrate for a semiconductor layer, is prepared in a state where the ion-implanted layer 6 is formed in the ion-implanted layer forming step P1 (FIG. 4A )reference). And
An oxide film 3 is formed on a single-crystal silicon substrate 2 as a support substrate in an oxide film forming step P3, and an amorphous silicon film forming step is performed on the surface of the oxide film 3 as an amorphous film forming step. In Q1, an amorphous silicon film 7, which is a semiconductor amorphous film, is formed with a desired film thickness (see FIG. 2B).

The two single-crystal silicon substrates 5 and 2 prepared in the above state are bonded in the same manner as described above.
4 (see FIG. 3 (c)), and thereafter, the peeling step P5, the solid-phase growth step P6, and the polishing step P7 are sequentially performed in the same manner, thereby oxidizing the single-crystal silicon substrate 2 as a support substrate. The SOI substrate 1 on which the single crystal silicon film 4 having a desired film thickness is formed with the film 3 interposed therebetween can be obtained. Further, according to the second embodiment, the same effect as that of the first embodiment can be obtained.

(Third Embodiment) FIGS. 5 and 6 show a third embodiment of the present invention. The difference from the first embodiment is that an amorphous film is formed after the peeling step P5. The method is to form an SOI substrate 8 by forming an amorphous silicon film 7 and performing solid phase growth.

That is, in this embodiment, in the ion-implanted layer forming step P1, the ion-implanted layer 6 is formed to a desired depth (2 μm
(See FIG. 6A). On the other hand, in the oxide film forming step P3, the single crystal silicon substrate 2 serving as a support substrate is formed.
Then, the single crystal silicon substrate 5 is bonded to 2 in the same manner as described above in the bonding step P4 (see FIG. 3B).

Hereinafter, the single crystal silicon film 4 is formed on the single crystal silicon substrate 2 via the oxide film 3 through the peeling step P5.
It is possible to obtain one in which a is formed (see FIG. 3C). Thereafter, in the polishing step R1, the peeled surface is polished to smooth the surface of the single crystal silicon film 4a (see FIG. 4D).

Next, in an amorphous silicon film forming step R2, which is an amorphous film forming step, an amorphous silicon film 7 having a desired thickness is formed as a semiconductor amorphous film on the surface of the single crystal silicon film 4a (see FIG. FIG. (E).
In this case, the amorphous silicon film 7 is formed using a plasma CVD method or the like in the same manner as described above. Thereafter, in the solid-phase growth step R3, the amorphous silicon film 7 is solid-phase grown using the single-crystal silicon film 4a as a nucleus to recrystallize into single-crystal silicon, and the single-crystal silicon as a whole is formed in the same manner as described above. Crystalline silicon film 4
Is obtained (see (f) in the figure). Then, after that, the surface of the single crystal silicon film 4 is polished as necessary to finish the surface in a smooth state, thereby obtaining the SOI substrate 8.

According to the third embodiment, the same effects as described above can be obtained, and an amorphous silicon film forming step R2 can be performed by using an SOI substrate on which a single-crystal silicon film having a small thickness is formed in advance. By performing the subsequent steps, the film thickness is large (about 10 μm or more)
An SOI substrate can be obtained through a simple manufacturing process.

The present invention is not limited to the above embodiment, but can be modified or expanded as follows. As the semiconductor layer substrate, a substrate other than silicon, such as Ge (germanium), SiC (silicon carbide), SiGe (silicon germanium) or diamond, may be used if it is a single crystal mainly composed of a group 4 element. Can be used. In this case, when a SiC substrate or the like is used, the substrate itself is very expensive, and therefore, by polishing and regenerating after peeling, the effects of effective use of resources and cost reduction are increased.

As a supporting substrate, a single crystal silicon substrate 2
Not limited to this, another semiconductor substrate or a ceramic substrate may be used, or the support substrate itself may have an insulating property. In this case, the support substrate itself has the insulating property. As described above, it is not necessary to separately form the oxide film 3 or the like as an insulating film.

[Brief description of the drawings]

FIG. 1 is a schematic view of a manufacturing process showing a first embodiment of the present invention.

FIG. 2 is a schematic sectional view in each step.

FIG. 3 is a view corresponding to FIG. 1, showing a second embodiment of the present invention;

FIG. 4 is a schematic cross-sectional view of each step of the supporting substrate.

FIG. 5 is a view corresponding to FIG. 1, showing a third embodiment of the present invention;

FIG. 6 is a diagram corresponding to FIG. 2;

[Explanation of symbols]

1 and 8 are SOI substrates (semiconductor substrates), 2 is a single crystal silicon substrate (support substrate), 3 is an oxide film, 4 is a single crystal silicon film (semiconductor layer), and 5 is a single crystal silicon substrate (semiconductor layer substrate). , 6 are ion implantation layers, and 7 is an amorphous silicon layer (semiconductor amorphous film).

Claims (8)

[Claims] 1. A method for manufacturing a semiconductor substrate (1) in which a semiconductor layer (4) for forming an element is provided on a supporting substrate (2) in an insulated state, wherein a semiconductor for forming the semiconductor layer (4) is provided. An ion implantation layer forming step (P) of forming an ion implantation layer (6) by ion implantation to a predetermined depth from the surface of the layer substrate (5);
1) an amorphous film forming step (P2) of forming a semiconductor amorphous film (7) on a surface of the semiconductor layer substrate (5) on which the ion implantation layer (6) is formed; (2) The semiconductor layer substrate (5)
A bonding step (P4) for bonding the side of the semiconductor amorphous film (7), and performing heat treatment on the bonded semiconductor layer substrate (5) and the supporting substrate (2) to form the ion implanted layer ( 6)
A peeling step (P5) of peeling the semiconductor layer substrate (5) at the peeling defect layer portion formed by the method (1). 2. A method for manufacturing a semiconductor substrate (1) comprising a semiconductor layer (4) for element formation provided on a support substrate (2) in an insulated state, wherein a semiconductor for forming the semiconductor layer (4) is provided. An ion implantation layer forming step (P) of forming an ion implantation layer (6) by ion implantation to a predetermined depth from the surface of the layer substrate (5);
1), an amorphous film forming step (Q1) of forming a semiconductor amorphous film (7) on the surface of the support substrate (2), and the semiconductor amorphous film (7) of the support substrate (2). ) Is attached to the surface of the substrate for semiconductor layer (5) on the side of the ion-implanted layer (6).
4) performing heat treatment on the bonded semiconductor layer substrate (5) and the support substrate (2) to form the ion-implanted layer (6).
A peeling step (P5) of peeling the semiconductor layer substrate (5) at the peeling defect layer portion formed by the method (1). 3. The method of manufacturing a semiconductor substrate according to claim 1, wherein the semiconductor amorphous film is formed by the peeling step (P5) or a heat treatment (P6) performed in a subsequent step. A method for manufacturing a semiconductor substrate, comprising recrystallizing a layer (4) as a nucleus. 4. A method for manufacturing a semiconductor substrate (8) comprising a semiconductor layer (4) for element formation provided on a supporting substrate (2) in an insulated state, wherein a semiconductor for forming the semiconductor layer (4) is provided. An ion implantation layer forming step (P) of forming an ion implantation layer (6) by ion implantation to a predetermined depth from the surface of the layer substrate (5);
1) and the substrate for semiconductor layer (5) with respect to the support substrate (2).
A bonding step (P4) of bonding the side of the ion-implanted layer (6), and a heat treatment performed on the substrate for semiconductor layer (5) and the support substrate (2) to form the ion-implanted layer (6). A peeling step (P5) of peeling the semiconductor layer substrate (5) at the peeling defect layer portion, and the semiconductor layer (4) formed on the support substrate (2).
An amorphous film forming step (R2) for forming a semiconductor amorphous film (7) thereon; and crystallizing the semiconductor amorphous film (7) by solid phase growth using the semiconductor layer (4) as a nucleus. And a solid-phase growth step (R3). 5. The method for manufacturing a semiconductor substrate according to claim 1, wherein in the amorphous film forming step (P2, Q1, R2), the semiconductor amorphous film (7) is formed by plasma. A method for manufacturing a semiconductor substrate, characterized by being formed by a CVD method. 6. The method for manufacturing a semiconductor substrate according to claim 1, wherein a polishing step (P7, R1) for polishing a surface of the semiconductor layer (4) peeled in the peeling step (P5). A method for manufacturing a semiconductor substrate, the method comprising: 7. The method for manufacturing a semiconductor substrate according to claim 1, wherein in the ion-implanted layer forming step (P1), the semiconductor amorphous film (7) is grown in a solid phase. Forming the ion-implanted layer (6) to a depth dimension that is required for the semiconductor layer (4) serving as a nucleus of the semiconductor substrate. 8. The method for manufacturing a semiconductor substrate according to claim 1, wherein in the amorphous film forming step (P2, Q1, R2), a single crystal silicon substrate is used as the semiconductor layer substrate. When (5) is used, an amorphous silicon film (7) is formed as the semiconductor amorphous film.