CN101218106A - 光盘及Cu合金记录层用溅射靶 - Google Patents
光盘及Cu合金记录层用溅射靶 Download PDFInfo
- Publication number
- CN101218106A CN101218106A CNA2006800244989A CN200680024498A CN101218106A CN 101218106 A CN101218106 A CN 101218106A CN A2006800244989 A CNA2006800244989 A CN A2006800244989A CN 200680024498 A CN200680024498 A CN 200680024498A CN 101218106 A CN101218106 A CN 101218106A
- Authority
- CN
- China
- Prior art keywords
- recording layer
- zns
- alloy
- atom
- sputtering target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 31
- 238000005477 sputtering target Methods 0.000 title claims abstract description 17
- 230000003287 optical effect Effects 0.000 title abstract description 16
- 239000010410 layer Substances 0.000 claims abstract description 57
- 239000011241 protective layer Substances 0.000 claims abstract description 25
- 239000012535 impurity Substances 0.000 claims abstract description 13
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 10
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 abstract description 9
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 description 52
- 239000000463 material Substances 0.000 description 26
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 22
- 238000005987 sulfurization reaction Methods 0.000 description 17
- 238000002310 reflectometry Methods 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- 238000002844 melting Methods 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000000007 visual effect Effects 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910000925 Cd alloy Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910017566 Cu-Mn Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910017767 Cu—Al Inorganic materials 0.000 description 1
- 229910017818 Cu—Mg Inorganic materials 0.000 description 1
- 229910017871 Cu—Mn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
添加元素 | ΔG[kacl/mol S2] | 防腐蚀效果 | |
300K | |||
实施例1 | Zn | -112 | 高 |
实施例2 | Mn | -124 | 高 |
比较例1 | Al | -134 | 稍差 |
比较例2 | Mg | -183 | 非常差 |
比较例3 | B | -60 | 非常差 |
Claims (4)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005195318 | 2005-07-04 | ||
JP195318/2005 | 2005-07-04 | ||
PCT/JP2006/307434 WO2007004344A1 (ja) | 2005-07-04 | 2006-04-07 | 光ディスク及びCu合金記録層用スパッタリングターゲット |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101218106A true CN101218106A (zh) | 2008-07-09 |
CN101218106B CN101218106B (zh) | 2010-05-26 |
Family
ID=37604220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800244989A Expired - Fee Related CN101218106B (zh) | 2005-07-04 | 2006-04-07 | 光盘及Cu合金记录层用溅射靶 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1900540B1 (zh) |
JP (1) | JP4603044B2 (zh) |
CN (1) | CN101218106B (zh) |
TW (1) | TW200706674A (zh) |
WO (1) | WO2007004344A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103459654A (zh) * | 2011-03-01 | 2013-12-18 | 吉坤日矿日石金属株式会社 | 铜钛合金制溅射靶、使用该溅射靶形成的半导体布线以及具备该半导体布线的半导体元件和器件 |
CN105008580A (zh) * | 2013-02-25 | 2015-10-28 | 三菱综合材料株式会社 | 溅射靶及其制造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103774100A (zh) * | 2012-10-22 | 2014-05-07 | 中环股份有限公司 | 溅镀靶材及可写录光记录媒体 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2475270A1 (fr) * | 1980-02-01 | 1981-08-07 | Thomson Csf | Structure de memoire reversible, a inscription thermo-optique et lecture optique, et procede d'inscription et d'effacement de cette structure |
JPS5938291B2 (ja) * | 1981-02-25 | 1984-09-14 | 株式会社東芝 | 色調記憶素子用合金 |
JPH066393B2 (ja) * | 1984-03-07 | 1994-01-26 | 株式会社日立製作所 | 情報の記録・消去方法 |
JPS61194658A (ja) * | 1985-02-22 | 1986-08-29 | Hitachi Ltd | 情報記録媒体 |
JPS62247060A (ja) | 1986-04-17 | 1987-10-28 | Mitsubishi Electric Corp | 光情報記録媒体 |
JPH0256746A (ja) * | 1988-08-19 | 1990-02-26 | Matsushita Electric Ind Co Ltd | 情報担体ディスク |
JPH0569671A (ja) * | 1991-09-13 | 1993-03-23 | Nec Corp | 多値光記録媒体およびその読み出し装置 |
TW468179B (en) * | 1998-08-05 | 2001-12-11 | Matsushita Electric Ind Co Ltd | Optical recording medium |
JP2002172861A (ja) * | 2000-12-06 | 2002-06-18 | Ricoh Co Ltd | 光情報記録媒体 |
JP2004079022A (ja) * | 2002-08-12 | 2004-03-11 | Tdk Corp | 光記録媒体及び光記録方法 |
-
2006
- 2006-04-07 CN CN2006800244989A patent/CN101218106B/zh not_active Expired - Fee Related
- 2006-04-07 WO PCT/JP2006/307434 patent/WO2007004344A1/ja active Application Filing
- 2006-04-07 EP EP06731381A patent/EP1900540B1/en not_active Not-in-force
- 2006-04-07 JP JP2007523348A patent/JP4603044B2/ja not_active Expired - Fee Related
- 2006-04-14 TW TW095113343A patent/TW200706674A/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103459654A (zh) * | 2011-03-01 | 2013-12-18 | 吉坤日矿日石金属株式会社 | 铜钛合金制溅射靶、使用该溅射靶形成的半导体布线以及具备该半导体布线的半导体元件和器件 |
CN103459654B (zh) * | 2011-03-01 | 2016-02-24 | 吉坤日矿日石金属株式会社 | 铜钛合金制溅射靶、使用该溅射靶形成的半导体布线以及具备该半导体布线的半导体元件和器件 |
CN105008580A (zh) * | 2013-02-25 | 2015-10-28 | 三菱综合材料株式会社 | 溅射靶及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1900540A1 (en) | 2008-03-19 |
JP4603044B2 (ja) | 2010-12-22 |
EP1900540A4 (en) | 2009-02-18 |
CN101218106B (zh) | 2010-05-26 |
JPWO2007004344A1 (ja) | 2009-01-22 |
TWI312814B (zh) | 2009-08-01 |
TW200706674A (en) | 2007-02-16 |
WO2007004344A1 (ja) | 2007-01-11 |
EP1900540B1 (en) | 2010-03-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: JX NIPPON MINING + METALS CORPORATION Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Tokyo, Japan Patentee after: JX Nippon Mining & Metals Corp. Address before: Tokyo, Japan Patentee before: Nippon Mining & Metals Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX NIPPON MINING & METALS Corp. Address before: Tokyo, Japan Patentee before: JX Nippon Mining & Metals Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100526 |