CN101211118A - LCD device preparation method and mask used in the method - Google Patents
LCD device preparation method and mask used in the method Download PDFInfo
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- CN101211118A CN101211118A CNA2006101478800A CN200610147880A CN101211118A CN 101211118 A CN101211118 A CN 101211118A CN A2006101478800 A CNA2006101478800 A CN A2006101478800A CN 200610147880 A CN200610147880 A CN 200610147880A CN 101211118 A CN101211118 A CN 101211118A
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Abstract
The invention relates to a method of manufacturing a liquid crystal display device and a mask used in the method. By regulating light receiving modes of photoresist of all areas which is coated on a base plate, the method carries out processing of a developed photoresist, so as to achieve the purpose that one mask fulfills etching of a contact hole and thinning or removing the thicknesses of the photoresist on the neighboring area of the contact hole of a terminal part, the neighboring area of the conduction contact hole between conductive layers and a non-necessary reserved area.
Description
Technical field
The present invention relates to liquid crystal display (LCD) device, and relate more specifically to the arraying bread board and the manufacture method thereof of liquid crystal indicator.
Background technology
Traditional CRT monitor relies on the phosphor powder on the cathode-ray tube (CRT) emitting electrons bump screen to come display image, but the principle of liquid crystal display is then different fully.Usually, liquid crystal display (LCD) device has upper substrate and infrabasal plate, have each other certain intervals and mutually over against.Be formed on two substrates a plurality of electrodes mutually over against.Liquid crystal is clipped between upper substrate and the following basic meal.Voltage is applied on the liquid crystal by the electrode on the substrate, thereby then according to the voltage that acted on change the arrangement display image of liquid crystal molecule, because liquid crystal indicator is not launched light as mentioned above, it needs light source to come display image. and therefore, liquid crystal indicator has the backlight that is positioned at the liquid crystal panel back.Thereby the arrangement according to liquid crystal molecule is controlled from backlight quantity of incident light display image.As shown in Figure 1, accompany glass substrate, colored filter, electrode, liquid crystal layer and transistor film between two polaroids, liquid crystal molecule is the material with refractive index and dielectric constant anisotropy.The light process that backlight sends is polaroid down, becomes the polarized light with certain polarization direction.Institute's making alive between the transistor controls electrode, and this voltage acts on the polarization direction that liquid crystal is controlled polarized light, polarized light forms monochromatic polarized light after seeing through corresponding color film chromatograph, if polarized light can penetrate the upper strata polaroid, then demonstrates corresponding color; Electric field intensity difference, the deflection angle of liquid crystal molecule are also different, and the light intensity that sees through is different, and the brightness of demonstration is also different.The combination of the different light intensity by three kinds of colors of RGB shows motley image.
Fig. 2 is the manufacturing process schematic flow sheet of the arraying bread board of traditional active matrix liquid crystal display apparatus.4 basic mask manufacture processes are divided into following steps:
1, first mask-grid forms (gate metal sputter, wet quarter, photoresist lift off);
2, second mask-amorphous silicon island and signal electrode form (doped amorphous silicon, data line metal sputtering/wet quarters/amorphous silicon is done the dried quarter/photoresist lift off of quarter/raceway groove for gate insulating film, amorphous silicon);
3, the 3rd mask-contact hole forms (data line dielectric film/through hole is done quarter/photoresist lift off);
4, the 4th mask-pixel forms (transparency electrode sputter/etching/photoresist lift off).
Fig. 3 to Fig. 6 is the synoptic diagram of corresponding above-mentioned each step of manufacture process of difference.
Patent documentation [(day), the spy opened 2000-66240, and the spy opens 2000-164886, and the spy opens 2005-292331] proposes to use a mask, finishes signal wire and transistorized making.Use second mask complete amorphous silicon island and signal wire as above-mentioned process.The figure that the GrayTone technology utilization is lower than exposure accuracy reduces the actual exposure amount (utilizing the diffraction of light principle) of this figure region under same conditions of exposure, and HalfTone technology is to utilize semi transparent material making semi-transparent zone this regional actual exposure amount of reduction under same conditions of exposure on the mask.Fig. 7 a～7c makes signal wire and transistorized synoptic diagram for utilizing mask of GrayTone technology utilization.HalfTone technology and Graytone technology are similar, difference is that the former removes the figure in corresponding GrayTone mask diffraction pattern district on mask, and apply in this zone and to have the material of semi-transparent effect and to make mask, and the technology of utilizing this mask to expose.
At present above-mentioned several The Application of Technology scopes mainly are confined to finish in the scope of manufacture craft of signal wiring and transistor part with a mask.
In addition, for further improving display characteristic, under the superiors' electrode (being generally transparency electrode such as phosphide tin compound, zinc paste etc.), organic membrane is set.Because this organic membrane has low specific inductive capacity simultaneously, therefore the good coating characteristic and the characteristic that has an even surface are applied to the liquid crystal panel design and can obtain extraordinary optical characteristics and electrology characteristic, such as very high aperture opening ratio, high contrast is hanged down and is crosstalked low distribution delay etc.Typical structure has wherein shown gate wirings terminal, the transistor portion of display part and the structure of signal wire distribution terminal respectively shown in Fig. 8 a～8c.
As mentioned above, for improving display characteristic applies one deck low-k between lower floor's distribution and top layer electrode insulating material, this insulating material is generally the photonasty organism.Utilize sensitization organism resin to finish the making of contact hole, obtain the shielding parasitic fields in expectations such as distribution are arranged simultaneously, reduce stray capacitance, or the place of improving effects such as flatness keeps as the organic membrane resin insulating barrier as the photoresist etching.For obtaining contact performance preferably by the contact hole portion of conducting about the gold goal and the position of G layer metal and D layer metal connecting portion etc. at portion of terminal, periphery, common way is with the etching contact hole and removes these regional photosensitive organic films and utilize two masks to complete compare present non-organic membrane technology has like this increased a mask again more.For reducing cost and reducing operation, the manufacture method (be designated hereinafter simply as the organic membrane periphery for convenience of description and keep technology) of not removing inessential reserve area photosensitive organic film behind the intact contact hole of etching is arranged also.But by this manufacturing process, in the terminal part because the existence of big section difference causes problems such as the excessive and crimping of resistance is bad easily, though can reduce the contact resistance of portion of terminal by etching Dummy hole to a certain extent, compare and utilize the contact resistance still bigger [(day), the spy opened 2002-328395] of the portion of terminal that present non-organic membrane technology makes.In addition in contact hole part because the degree of depth in hole equals the thickness (thousands of dust) that the thickness (normally several microns) of organic membrane adds inorganic insulating membrane, cause through hole dark excessively, occur ITO easily and cover situations such as bad.In addition in adopting seal, sealing materials, add gold goal and be used as the occasion of common electrode conducting technology up and down, also cause contact resistance excessive.If the organic membrane of sealing-in glue part fails to remove in addition, then must be directly on the softer organic membrane of material, apply sealing-in glue, cause difficulty of the thick control ratio of box, it is bad to be prone to contact performance, reliability problem, problems such as peripheral MURA.
Fig. 9 a～9d is depicted as present employing organic membrane periphery when keeping technology at the design sketch of contact hole part and terminal part, wherein Fig. 9 a is the contact hole portion vertical view of gate metal layer and signal electrode metal level, Fig. 9 b is the sectional view of section line AA ' shown in Fig. 9 a, Fig. 9 c is the vertical view of gate metal layer portion of terminal, Fig. 9 d is the sectional view of section line shown in Fig. 9 c, and situation is similar therewith in D side terminal portion; Figure 10 a～10c is depicted as when present employing organic membrane is peripheral to keep technology at sealing-in glue design sketch (adopting the occasion of gold goal as upper/lower electrode conducting means) partly, wherein Figure 10 b is the local amplification plan view of position shown in Figure 10 a, and Figure 10 c is the sectional view of section line CC ' shown in Figure 10 b.
Above-mentioned organic membrane technology is in the manufacturing field that just is introduced in liquid crystal panel in recent years, and up to the present, organic membrane technology is made panel and mostly rested on laboratory stage, and the volume production product seldom.This be because, (suggestion deletion, there is not cause-effect relationship in front and back) present main flow technology does not relate to organic membrane, does not need large-area photoresist reduction processing, weakened region just is confined to form in the scope of 4～10um of transistor channel; And for large area lithography glue reduction process, it is not all right directly the technology of signal wiring and transistor part manufacture craft being used on the organic membrane technology, light distribution when may cause exposure is inhomogeneous, if limit is more than the process tolerant value then may cause the semi-transparent photoresist etching existing problems of crossing in the region area, therefore need determine the distribution and the density (to Graytone) of pattern by optical analogy and experiment at specific exposure machine, then will solve the homogeneity question of the semi-permeable diaphragm in the large tracts of land for Halftone.
Summary of the invention
In present manufacturing liquid crystal indicator process, the non-organic membrane structure of texture ratio that organic membrane is set under the superiors' electrode needs the mask of using more on technology, and the problem that causes operation and cost to increase proposes the present invention.
In the present invention, by the collection of analysis and data, think that be feasible with existing Graytone and Halftone technology through being out of shape and expanding and be applied to large area lithography glue reduction process.
The objective of the invention is to, a kind of LCD device preparation method is provided, described method is a photoresist with the organic photo resin, use mask to carry out photoetching with the contact hole structure in the formation liquid crystal indicator, and the photoresist of reservation specific region is as insulation course.When using mask to carry out photoetching, as long as single exposure promptly can form at least three kinds of zones on as the organic photo resin of photoresist layer: shading region, exposure region and semi-transparent exposure region fully fully, after etching formed contact hole, the etching that remaining photoresist is carried out controlled condition can be finished the making of desired structure.
Introduce as background technology, under the superiors' electrode of liquid crystal indicator, use the structure of organic photo resin insulating film to form a kind of trend at present, this rete has low-k, good paintability and the characteristic that has an even surface simultaneously, helps to improve optical characteristics and electrology characteristic.As the photonasty organism, a this resin purposes in the present invention is to finish for example making of contact hole as photoresist, and another purposes is to remain in required zone as insulation course, for example because of there being distribution to wish to obtain the shielding parasitic fields, reduce the zone of stray capacitance, the zone that perhaps needs to improve flatness.Do not increasing the photoetching number of times, promptly do not increase under the number of masks prerequisite that needs to use, how only to adopt a mask to finish contact etch and the etching of organic insulation rete, and guarantee that the section difference between lower dielectric film zone and the naked diaphragm area is the technical issues that need to address of the present invention.
The present invention proposes the method that a kind of light income that can make the organic photo resin in single exposure is divided into three or three above grades thus, the method is used for forming contact hole on organic insulating film, and attenuate and even remove the organic insulating film in inessential zone.The organic photo resin bed is exposed into three or three above grade exposure areas in the process of photoetching, with the positive photoresist is example, particularly, the complete exposure region that can have photoresist to be removed fully in the described exposure area, photoresist keeps and the complete shading region that hardens fully, and photoresist partly exposes and removes and part exposure region that part keeps.Correspondingly, for the organic photo resin bed after the exposure, the organic photo resin is removed fully in the exposure region fully, exposes it and needs etched base material (being the contact hole zone among the present invention) down; Stay the organic photo resin that a part is not exposed in the semi-transparent exposure region; And the organic photo resin bed of shading region keeps fully fully, and its thickness is maximum in above-mentioned three kinds of zones.
After the exposure of organic photo resin bed forms the zone of above-mentioned various different depth of exposures, at first the base material to complete exposure area carries out etching, for example, adopts dry-etching, etching is positioned at the insulation course on the metal level, to finish the making of the structure of contact hole described in the present invention.Then, remaining organic photo resin bed is carried out etching, for example, adopt the method for ashing etching.Because the resin layer thickness of semi-transparent exposure region less than complete shading region, under equal etching condition, when the resin bed of semi-transparent exposure region is removed fully, though the resin bed of shading region is thinned equally fully, should still can keep certain thickness.Therefore, the mask that only uses that has also just reached expection is finished the purpose that contact hole is made and the insulation course in inessential zone is removed.
According to the proposed method, wherein comprise following steps at least:
A. in single exposure, the light income of described organic photo resin is divided into three or three above grades, on the organic photo resin, forms the zone of three or three above depth of exposures.
B. after etching forms contact hole, the remaining organic photo resin bed of photoetching is carried out dry-etching or Wet-type etching, only keep the organic photo resin of specific region.
In a concrete scheme of the present invention, the mask that forms pattern that is used to expose uses the GrayTone technology, has following three kinds of area of the pattern at least:
Fully shading region is used to block incident light, forms fully not exposure area;
Exposure region is used to make incident light fully by mask fully, forms complete exposure area;
Semi-transparent exposure region, this zone be transparent base coated with semi transparent material, the actual exposure amount that light is passed through behind this zone reduces, and forms depth of exposure between the semi-transparent exposure area between exposure area and the complete exposure area not fully.
When being applied to LCD device preparation method of the present invention, the exposure that light intensity energy by regulating exposure and time shutter are revised semi-transparent exposure region.
In another concrete scheme of the present invention, the mask that forms pattern that is used to expose uses the HalfTone technology, has following three kinds of area of the pattern at least:
Fully shading region is used to block incident light, forms fully not exposure area;
Exposure region is used to make incident light fully by mask fully, forms complete exposure area;
Semi-transparent exposure region, this zone be transparent base coated with semi transparent material, the actual exposure amount that light is passed through behind this zone reduces, and forms depth of exposure between the semi-transparent exposure area between exposure area and the complete exposure area not fully.
When using LCD device preparation method of the present invention, the exposure that light intensity energy by regulating exposure and time shutter are revised semi-transparent exposure region.
Another object of the present invention is to provide a kind of mask that can be applied to the inventive method, and this mask can make the light income of organic photo resin be divided into three or three above grades in single exposure.It has following three kinds of area of the pattern at least:
Shading region is used to block incident light fully;
Exposure region is used to make incident light to pass through mask fully fully;
Semi-transparent exposure region, this zone has the pattern that is lower than exposure accuracy, produce diffraction when light passes through this zone, thereby the actual exposure amount reduces.The pattern density of described semi-transparent exposure region changes according to the difference of each semi-transparent exposure region material reflectance, to regulate each regional exposure unanimity.
In another scheme, the mask of liquid crystal indicator manufacturing process has following three kinds of area of the pattern at least:
Shading region is used to block incident light fully;
Exposure region is used to make incident light to pass through mask fully fully;
Semi-transparent exposure region, this zone is coated with semi transparent material, makes the actual exposure amount reduction after light passes through this zone.The coating thickness of the semi transparent material that described semi-transparent exposure region uses changes according to the difference of each semi-transparent exposure region material, to regulate the exposure unanimity of each regional light-sensitive surface.
In the above-described mask, semi-transparent exposure region needs the zone of attenuate corresponding to organic insulating film, and its concrete zone corresponding in liquid crystal indicator comprises:
The portion of terminal zone, the gold goal technology contact hole portion zone of conducting is up and down adopted, the contact hole peripheral region in the through-hole section zone of gate metal layer and the conducting of signal electrode metal level, and pixel portion remove lead, the remainder outside the reservation resin bed on the transistor part.
Advantage of the present invention is, the LCD device preparation method that is provided is provided, and the mask that is used for the method, only need single exposure can make the organic insulation film development of substrate produce at least three kinds of zones: complete shading region, complete exposure region, semi-transparent exposure region.Compare existing processes and reduced mask use operation, when enhancing productivity, also saved production cost.
Description of drawings
The application's accompanying drawing is an ingredient of instructions, can help to understand the object of the invention and advantage of the present invention better in conjunction with the description of instructions.Each the description of the drawings is as follows:
The arraying bread board synoptic diagram of Fig. 1 tradition active matrix liquid crystal display apparatus;
The array base palte that Fig. 2 adopts is usually made process flow diagram;
The gate electrode layer figure that Fig. 3 forms through first mask;
Signal electrode layer pattern and transistor figure that Fig. 4 forms through second mask;
The contact hole graph that Fig. 5 forms through the 3rd mask;
The transparency electrode figure that Fig. 6 forms through the 4th mask;
Fig. 7 a～Fig. 7 c makes signal wire and transistorized synoptic diagram for utilizing mask of GrayTone technology utilization;
Fig. 8 a～Fig. 8 c has shown gate wirings terminal, the transistor portion of display part and the structure of signal wire distribution terminal respectively;
Fig. 9 a～9d is depicted as present employing organic membrane periphery when keeping technology at the design sketch of contact hole part and terminal part;
At the design sketch of sealing-in glue part, wherein Figure 10 b was the local amplification plan view of position shown in Figure 10 a when Figure 10 a～10c was depicted as the peripheral reservation of present employing organic membrane technology, and Figure 10 c is the sectional view of section line shown in Figure 10 b;
Figure 11 a～Figure 11 c shows according to the technological process that is used to make contact hole layer, organic film and surperficial ITO figure of first embodiment of the invention synoptic diagram step by step;
Figure 12 a～Figure 12 c utilizes GrayTone technology to form the synoptic diagram (not carrying out the photosensitive resin reduction processing) of portion of terminal contact hole part;
Figure 13 a～Figure 13 c utilizes GrayTone technology to form the synoptic diagram (carrying out the photosensitive resin reduction processing) of portion of terminal contact hole part;
Figure 14 is the figure example that possible be used for the GrayTone structure of mask, and wherein Figure 14 a～14f has enumerated adaptable concrete figure respectively;
Figure 15 contact hole and the figure example 1 of exposed mask version possibility on every side thereof, wherein, Figure 15 a has described the size in hole on the size of actual apertures and the mask respectively with dotted line and solid line, Figure 15 b～15d is the example of contact hole shape in the concrete pattern environment, and frame of broken lines is wherein represented the size of actual apertures equally;
Figure 16 is the contact hole and the figure example 2 of exposed mask version possibility on every side thereof, wherein, Figure 16 a has described the size in hole on the size of actual apertures and the mask respectively with dotted line and solid line, Figure 16 b～16d is the example of contact hole shape in the concrete pattern environment, and frame of broken lines is wherein represented the size of actual apertures equally;
Figure 17 shields surrounding terminals part photoresist and removes the field example;
Figure 18 gate metal layer portion of terminal is made example;
Figure 19 a and Figure 19 b are gate metal layer portion of terminal design sketch, and wherein Figure 19 b is a DD ' schematic cross-section among Figure 19 a;
The making example of Figure 20 gate metal layer and signal electrode metal level conducting contact hole hole portion;
Figure 21 a and Figure 21 b have shown that gate metal layer and signal electrode metal level conducting contact hole portion handle the back design sketch, and wherein Figure 21 b is an EE ' schematic cross-section shown in Figure 21 a;
Figure 22 a and Figure 22 b are the design sketch after the contact hole section processes of peripheral sealing-in glue gold goal technology, and wherein Figure 22 b is a FF ' schematic cross-section shown in Figure 22 a;
Figure 23 is the PROCESS FOR TREATMENT process flow diagram of the present invention about individual mask etching through hole portion and the inessential regional organic photo resin of attenuate.
Description of reference numerals
| 1, glass | 1001, upper strata Polarizer |
| 2, gate metal | 1002, color film |
| 3, gate insulator | 1003, black matrix" |
| 4, amorphous silicon layer and doped amorphous silicon layer | 1004, sweep trace |
| 5, signal electrode layer metal | 1005, array sub-pixel |
| 6, go up layer insulating | 1006, signal wire |
| 7, transparent electrode layer | 1007, color membrane substrates |
| 8, sensitization organic insulator | 1008, common electrode |
| 9, contact through hole | 1009, liquid crystal |
| 101, mask | 1010, array base palte |
| 102, ultraviolet light | 1011, pixel electrode |
| 103, complete lightproof area | 1012, lower floor's Polarizer |
| 104, the semi-transparent zone of Gray Tone/Half Tone technology | 31,41,51,61, gate wirings terminal |
| 105, complete exposure area | 32,42,52,62, the transistor portion of display part |
| 106, shading graph | 33,43,53,63, signal wire distribution terminal |
| 107, light leak zone | 34,44,54,64, signal wire distribution terminal |
| 114, portion of terminal | 35,45,55,65, gate wirings terminal |
| 115, sealing-in glue | 36,46,56,66,116, display part |
| 171, glass substrate | 173, organic photo resin bed attenuate field |
| 174, portion of terminal | 175, sealing-in glue |
| 176, display part | 177, screen trim line |
| 178, color film trim line | 181, the TFT side is cut off line |
| 182,202, organic photo resin thickness weakened region | 183, the CF side is cut off line |
| 184, sealing-in glue |
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
When the preparation liquid crystal panel, earlier according to complete successively sweep trace part on the liquid crystal panel of manufacturing process of the prior art, transistor part, signal wire part, need to carry out the making of contact hole part subsequently, the making of the making of organic membrane figure and surperficial ITO figure.Figure 11 a～Figure 11 c shows the process flow diagram that is used to make contact hole layer, organic film and surperficial ITO figure according to first embodiment of the invention.
Shown in Figure 11 a, at first, on the dielectric film that deposition is finished, evenly be coated with one deck photosensitive resin (PR), normally add the propylene resin of emulsion, used common photoresist is similar when making with aforementioned other layer patterns, exposes technology such as dry by the fire after super-dry after.The mask of exposure is provided with Gray Tone structure in essential regions 104, wherein for being lower than the pattern of exposure accuracy, producing diffraction in the time of can making light pass through this zone, thereby reaches large-area even semi-transparent exposure result.Carry out via etch zone 105 at needs and then adopt complete Exposure mode, remove the photosensitive resin on the dielectric film in this zone fully.
Specific requirement to above-mentioned photosensitive resin is that it has high photopermeability, low dielectric constant values, and good photosensitive material amalgamation, good coated characteristic, good characteristics such as flowability, therefore at present normally adopting above-mentioned acrylic resin is photosensitive material.For the BCB resin,,,, form pattern thereon by etching therefore to the normally coated other PR of this material because itself characteristic is not suitable as photosensitive material and uses though very low specific inductive capacity is arranged.
Through overexposure, three zones have been stayed on the substrate: complete shading region 103, complete exposure region 105, semi-transparent exposure region 104.Produce corresponding three different zones of cladding thickness after developing, the photosensitive resin thickness of shading region 103 is the thickest fully, and the photosensitive resin that semi-transparent district 104 stays is less, and 105 of exposure regions are removed photosensitive resin fully fully.Carry out via etch then, shown in Figure 11 b, remove the inorganic insulating membrane 6 of complete exposure area by for example dry carving technology.If necessary, can carry out cineration technics, shown in Figure 11 c, the organic photo resin thickness of further attenuate integral body, the while also can reach the purpose of sense of control photopolymer resin thickness.
In the exposure process, the exposure of photosensitive resin is the direct ratio function of light intensity energy and time shutter product, the exposure that light intensity energy by regulating exposure machine and time shutter can be revised place, the semi-transparent zone of Gray Tone.Figure 12 a～Figure 12 c and Figure 13 a～Figure 13 c have shown whole exposure and device architecture forming process, wherein, the process of Figure 12 is, after the exposure of state shown in Figure 12 a, along with carrying out etching, form through hole 9, shown in Figure 12 b, directly cover with transparent electrode layer (ITO) layer 7, shown in Figure 12 c then.The process of Figure 13 is similar with it, just before forming the ITO layer, earlier the organic insulation rete is made reduction processing, for example by ashing.
The selection of above-mentioned time shutter is for etched portions, and the influence of shading light part is smaller.This exposure has influence on the size of the d of thickness difference shown in the figure.Enlarge d and can improve the process tolerant value, but can increase the process time simultaneously.The density that changes the light leak grid of zones of different according to the reflectivity of each region material is regulated the exposure unanimity of each regional light-sensitive surface with this, obtains the thickness of the film of homogeneous by identical etching condition.Effect such as Figure 12, shown in Figure 13.
Particularly, it is poor that above-mentioned thickness difference d refers to the organic photo film and the section between the semi-transparent exposure region organic photo film of complete lightproof area.This section difference forms after the oven dry of developing for the first time.The tolerance value that it has influence on technology that is to say that d is big more, and control is got up may be just more convenient, is unlikely to cause the light shield layer thickness thin excessively owing to crossing to carve little by little.
In addition, contact hole is partly poor with the semi-transparent part also section of existence, owing to relate to the problem of the dielectric film in protection contact hole peripheral extent field, therefore, also wishes usually it to be controlled at more than the scope of technology permission.
Figure 14 is for being used for the Gray Tone structure graph of mask, and Figure 14 a～14f has enumerated adaptable concrete figure respectively, and these figures only are used for example, have the knack of the art technology personage and can change according to actual needs.
Figure 15, Figure 16 is a contact hole and the exposed mask version can applicable figure (or being the composite figure of Figure 17 figure) on every side, wherein, Figure 15 a, 16a have described the size in hole on the size of actual apertures and the mask respectively with dotted line and solid line, Figure 15 b～15d, 16b～16d are the example of contact hole shape in the concrete pattern environment, and frame of broken lines is wherein represented the size of actual apertures equally.
Treatment process such as embodiment 1.Difference is that Gray Tone mask adopts the grid-like pattern structure in the zone of needs being carried out semi-transparent processing, and Half Tone mask then adopts semi transparent material in this same area.
The exposure that light intensity energy by regulating exposure machine and time shutter can be revised the semi-transparent zone of Half Tone.And this time for etched portions, the influence of shading light part is smaller.This exposure has influence on the size of shading region and semi-opaque region thickness difference d.Enlarge d and can improve the process tolerant value, but can increase the process time simultaneously.
The thickness of semi-transparent material that changes the mask of zones of different according to the reflectivity of each region material is regulated the exposure unanimity of each regional light-sensitive surface with this, obtains the thickness of the film of homogeneous by identical etching condition.
Use effect of the present invention
Can obtain effect as follows after the method processing by the present invention:
Surrounding terminals part photoresist is removed field (inner contact bore portion is not represented) (inside contacts bore portion and do not represent) as shown in figure 17;
Portion of terminal is made (signal metal layer portion of terminal similarly) as shown in figure 18;
Portion of terminal is handled back design sketch (signal metal layer portion of terminal similarly) shown in Figure 19 a and 19b;
The making of gate metal layer and signal electrode metal level conducting contact hole hole portion as shown in figure 20;
Gate metal layer and signal electrode metal level conducting contact hole portion handle the back design sketch as shown in figure 21;
Design sketch after the contact hole section processes of periphery sealing-in glue gold goal technology as shown in figure 22;
The PROCESS FOR TREATMENT process flow diagram of individual mask etching through hole portion and the inessential regional organic photo resin of attenuate as shown in figure 23;
The technician of the industry should be appreciated that under the prerequisite that does not break away from spirit of the present invention or principal character, the present invention can also implement with other specific forms.Therefore, by whole technical schemes of the present invention, cited embodiment just is used to illustrate the present invention rather than restriction the present invention, and the present invention is not limited to the details of describing herein.The scope of protection of present invention is defined by appending claims.
Claims (15)
1. a LCD device preparation method is a photoresist with the organic photo resin, uses mask that described organic photo resin is carried out photoetching, and the photoresist that keeps the specific region is characterized in that as insulation course, said method comprising the steps of:
A. in single exposure, utilize described mask that the light income of described organic photo resin is divided into three or three above grades, on the organic photo resin, side by side form a plurality of zones with three or three above depth of exposures.
2. the method for claim 1 is characterized in that, described mask comprises following area of the pattern at least:
One or more complete shading regions are used to block incident light, form fully not exposure area;
One or more complete exposure regions are used to make incident light fully by mask, form complete exposure area;
One or more semi-transparent exposure regions, this zone has the pattern that is lower than exposure accuracy, light produces diffraction when this zone, thereby the actual exposure amount of its light area is reduced, and forms depth of exposure between the semi-transparent exposure area between exposure area and the complete exposure area not fully.
3. method as claimed in claim 2, it is characterized in that, when described mask comprised a plurality of semi-transparent exposure region, the density of the pattern of different semi-transparent exposure regions was regulated according to its corresponding light area material reflectance, so that each semi-transparent exposure region exposure unanimity.
4. LCD device preparation method as claimed in claim 1 is characterized in that, described mask comprises following area of the pattern at least:
One or more complete shading regions are used to block incident light, form fully not exposure area;
One or more complete exposure regions are used to make incident light fully by mask, form complete exposure area;
One or more semi-transparent exposure regions, this zone be transparent base coated with semi transparent material, the actual exposure amount that light is passed through behind this zone reduces, and forms depth of exposure between the semi-transparent exposure area between exposure area and the complete exposure area not fully.
5. method as claimed in claim 4, it is characterized in that, when described mask comprises a plurality of semi-transparent exposure region, the coating thickness of the semi transparent material that different semi-transparent exposure regions use is regulated according to the difference of its corresponding light area material reflectance, so that the actual exposure amount unanimity of each semi-transparent exposure area.
6. as each described method in the claim 1～5, it is characterized in that, further comprising the steps of:
B. after etching forms contact hole, the remaining organic photo resin bed of photoetching is carried out dry-etching or Wet-type etching, to keep the organic photo resin of specific region.
7. method as claimed in claim 6 is characterized in that described dry-etching comprises the ashing treatment process.
8. as claim 6 or 7 described methods, it is characterized in that described step b also comprises:
-when the thickness of the organic photo resin in the described complete shading region reduces to a predetermined value, stop the remaining organic photo resin of described photoetching is carried out etching.
9. as each described LCD device preparation method in the claim 1～8, it is characterized in that, further comprising the steps of:
-revise exposure by the light intensity energy and the time shutter of the exposure of integral body or local modulation.
10. mask that is used for the liquid crystal indicator manufacturing process, be used for making the organic insulating film of liquid crystal indicator to form contact hole, and attenuate and even remove the organic insulating film in inessential zone, it is characterized in that described mask can make the light income of organic photo resin be divided into three or three above grades in single exposure.
11. the mask that is used for the liquid crystal indicator manufacturing process as claimed in claim 10 is characterized in that, described mask has following three kinds of area of the pattern at least:
One or more complete shading regions are used to block incident light;
One or more complete exposure regions are used to make incident light to pass through mask fully;
One or more semi-transparent exposure regions, this zone has the pattern that is lower than exposure accuracy, produce diffraction when light passes through this zone, thereby the actual exposure amount reduces.
12. the mask that is used for the liquid crystal indicator manufacturing process as claimed in claim 11, it is characterized in that, when described mask comprises a plurality of semi-transparent exposure region, the density of the pattern of different semi-transparent exposure regions is regulated according to its corresponding light area material reflectance, so that each semi-transparent exposure region exposure unanimity.
13. the mask that is used for the liquid crystal indicator manufacturing process as claimed in claim 12 is characterized in that, described mask comprises following area of the pattern at least:
One or more complete shading regions are used to block incident light;
One or more complete exposure regions are used to make incident light to pass through mask fully;
One or more semi-transparent exposure regions, this zone is coated with semi transparent material, makes the actual exposure amount reduction after light passes through this zone.
14. the mask that is used for the liquid crystal indicator manufacturing process as claimed in claim 13, it is characterized in that, when described mask comprises a plurality of semi-transparent exposure region, the coating thickness of the semi transparent material of different semi-transparent exposure regions changes according to the difference of each semi-transparent exposure region material, so that the exposure unanimity of each regional light-sensitive surface.
15. as in the claim 11～14 any one be used for as described in the mask of LCD device preparation method, it is characterized in that, described semi-transparent exposure region on the mask needs the zone of attenuate corresponding to organic insulating film, and its concrete zone corresponding in liquid crystal indicator comprises following any or appoints a plurality of:
The portion of terminal zone, the gold goal technology contact hole portion zone of conducting is up and down adopted, the contact hole peripheral region in the through-hole section zone of gate metal layer and the conducting of signal electrode metal level, and pixel portion is removed lead, all the other zones on the transistor part outside the reservation resin layer region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101478800A CN101211118A (en) | 2006-12-25 | 2006-12-25 | LCD device preparation method and mask used in the method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101478800A CN101211118A (en) | 2006-12-25 | 2006-12-25 | LCD device preparation method and mask used in the method |
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| Publication Number | Publication Date |
|---|---|
| CN101211118A true CN101211118A (en) | 2008-07-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101478800A Pending CN101211118A (en) | 2006-12-25 | 2006-12-25 | LCD device preparation method and mask used in the method |
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| Country | Link |
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| CN (1) | CN101211118A (en) |
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| CN102364389A (en) * | 2011-10-17 | 2012-02-29 | 深圳市华星光电技术有限公司 | Manufacturing method based on control over angle of contact hole wall of liquid crystal display device |
| CN102662278A (en) * | 2012-05-29 | 2012-09-12 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display panel |
| WO2015067069A1 (en) * | 2013-11-05 | 2015-05-14 | 京东方科技集团股份有限公司 | Array substrate manufacturing method and through-hole manufacturing method |
| CN104777710A (en) * | 2015-04-24 | 2015-07-15 | 昆山龙腾光电有限公司 | Mask plate |
| CN105824189A (en) * | 2016-06-08 | 2016-08-03 | 京东方科技集团股份有限公司 | Mask plate, substrate partition column, preparation methods thereof and display panel |
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| WO2019127777A1 (en) * | 2017-12-29 | 2019-07-04 | 深圳市华星光电技术有限公司 | Array substrate and manufacturing method therefor |
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| CN102662278A (en) * | 2012-05-29 | 2012-09-12 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display panel |
| WO2015067069A1 (en) * | 2013-11-05 | 2015-05-14 | 京东方科技集团股份有限公司 | Array substrate manufacturing method and through-hole manufacturing method |
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| CN104777710A (en) * | 2015-04-24 | 2015-07-15 | 昆山龙腾光电有限公司 | Mask plate |
| CN105824189A (en) * | 2016-06-08 | 2016-08-03 | 京东方科技集团股份有限公司 | Mask plate, substrate partition column, preparation methods thereof and display panel |
| WO2017211090A1 (en) * | 2016-06-08 | 2017-12-14 | 京东方科技集团股份有限公司 | Mask plate and substrate spacing column and method for manufacturing same, and display panel |
| US10571751B2 (en) | 2016-06-08 | 2020-02-25 | Boe Technology Group Co., Ltd. | Mask plates and photo spacers and methods for preparing the same and display panels |
| CN105824189B (en) * | 2016-06-08 | 2020-01-07 | 京东方科技集团股份有限公司 | Mask plate, substrate spacer column, preparation methods of mask plate and substrate spacer column and display panel |
| CN107132724A (en) * | 2017-05-10 | 2017-09-05 | 深圳市华星光电技术有限公司 | A kind of preparation method of mask plate and array base palte |
| CN107132724B (en) * | 2017-05-10 | 2019-11-26 | 深圳市华星光电技术有限公司 | A kind of preparation method of mask plate and array substrate |
| CN107643657A (en) * | 2017-10-31 | 2018-01-30 | 武汉华星光电技术有限公司 | A kind of method and light shield for improving panel periphery TITO residuals |
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| CN115616850A (en) * | 2022-12-05 | 2023-01-17 | 合肥新晶集成电路有限公司 | Mask, semiconductor structure and preparation method thereof |
| CN117130199A (en) * | 2023-08-30 | 2023-11-28 | 长沙惠科光电有限公司 | Display panel manufacturing method and display panel |
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