CN101211119A - LCD device preparation method and mask used in the method - Google Patents
LCD device preparation method and mask used in the method Download PDFInfo
- Publication number
- CN101211119A CN101211119A CNA2006101478815A CN200610147881A CN101211119A CN 101211119 A CN101211119 A CN 101211119A CN A2006101478815 A CNA2006101478815 A CN A2006101478815A CN 200610147881 A CN200610147881 A CN 200610147881A CN 101211119 A CN101211119 A CN 101211119A
- Authority
- CN
- China
- Prior art keywords
- mask
- exposure
- photosensitive resin
- contact hole
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Liquid Crystal (AREA)
Abstract
The invention relates to a method of manufacturing a liquid crystal display device and a mask used in the method. By regulating light receiving modes of photosensitive resin of all areas which is coated on a base plate, the method carries out processing of a developed photosensitive resin, so as to achieve the purpose that one mask fulfills etching of a contact hole and thinning or removing the thicknesses of the photosensitive resin on the neighboring area of the contact hole of a terminal part, the neighboring area of the conduction contact hole between conductive layers and a non-necessary reserved area.
Description
Technical field
The present invention relates to liquid crystal display (LCD) device, and relate more specifically to the arraying bread board and the manufacture method thereof of liquid crystal indicator.
Background technology
Traditional CRT monitor relies on the phosphor powder on the cathode-ray tube (CRT) emitting electrons bump screen to come display image, but the principle of liquid crystal display is then different fully.Usually, liquid crystal display (LCD) device has upper substrate and infrabasal plate, have each other certain intervals and mutually over against.Be formed on two substrates a plurality of electrodes mutually over against.Liquid crystal is clipped between upper substrate and the following basic meal.Voltage is applied on the liquid crystal by the electrode on the substrate, thereby then according to the voltage that acted on change the arrangement display image of liquid crystal molecule, because liquid crystal indicator is not launched light as mentioned above, it needs light source to come display image. and therefore, liquid crystal indicator has the backlight that is positioned at the liquid crystal panel back.Thereby the arrangement according to liquid crystal molecule is controlled from backlight quantity of incident light display image.As shown in Figure 1, accompany glass substrate, colored filter, electrode, liquid crystal layer and transistor film between two polaroids, liquid crystal molecule is the material with refractive index and dielectric constant anisotropy.The light process that backlight sends is polaroid down, becomes the polarized light with certain polarization direction.Institute's making alive between the transistor controls electrode, and this voltage acts on the polarization direction that liquid crystal is controlled polarized light, polarized light forms monochromatic polarized light after seeing through corresponding color film chromatograph, if polarized light can penetrate the upper strata polaroid, then demonstrates corresponding color; Electric field intensity difference, the deflection angle of liquid crystal molecule are also different, and the light intensity that sees through is different, and the brightness of demonstration is also different.The combination of the different light intensity by three kinds of colors of RGB shows motley image.
Fig. 2 is the manufacturing process schematic flow sheet of the arraying bread board of traditional active matrix liquid crystal display apparatus.4 basic mask manufacture processes are divided into following steps:
1, first mask-grid forms (gate metal sputter, wet quarter, photosensitive resin are peeled off)
2, second mask-amorphous silicon island and signal electrode form (doped amorphous silicon, data line metal sputtering/wet quarters/amorphous silicon is done the dried quarter/photosensitive resin of quarter/raceway groove and peeled off for gate insulating film, amorphous silicon)
3, the 3rd mask-contact hole forms (data line dielectric film/through hole is done quarter/photosensitive resin and peeled off)
4, the 4th mask-pixel forms (transparency electrode sputter/etching/photosensitive resin is peeled off)
Fig. 3 to Fig. 6 is the synoptic diagram of corresponding above-mentioned each step of manufacture process of difference.
Propose to utilize Reflow technology to use a mask according to patent [day special 2000-131719], finish signal wire and transistorized making.Fig. 7 a～7c has shown the process that technology realizes.Photosensitive resin after exposure engineering and development engineering keeps situation shown in Fig. 7 a, photosensitive resin heated thereafter, cause the photosensitive resin material softening by thermal conductance, make photosensitive resin have certain flowability, after fully flowing, the shape of photosensitive resin layer is shown in Fig. 7 b, and under the prerequisite that does not as far as possible change the photosensitive resin shape that needs reservation photosensitive resin field, the photosensitive resin zone 104 that keeps the minute pattern array behind exposure imaging forms the photosensitive resin layer that approaches; Then device is carried out etching, form required device architecture, shown in Fig. 7 c.
At present above-mentioned several The Application of Technology scopes mainly are confined to finish in the scope of manufacture craft of signal wiring and transistor part with a mask.
In addition, for further improving display characteristic, under the superiors' electrode (being generally transparency electrode such as phosphide tin compound, zinc paste etc.), organic membrane is set.Because this organic membrane has low specific inductive capacity simultaneously, therefore the good coating characteristic and the characteristic that has an even surface are applied to the liquid crystal panel design and can obtain extraordinary optical characteristics and electrology characteristic, such as very high aperture opening ratio, high contrast is hanged down and is crosstalked low distribution delay etc.Typical structure has wherein shown gate wirings terminal, the transistor portion of display part and the structure of signal wire distribution terminal respectively shown in Fig. 8 a～8c.
As mentioned above, for improving display characteristic applies one deck low-k between lower floor's distribution and top layer electrode insulating material, this insulating material is generally the photonasty organism.Utilize the sensitization organic resin to finish the making of contact hole, obtain the shielding parasitic fields in expectations such as distribution are arranged simultaneously, reduce stray capacitance, or the place of improving effects such as flatness keeps as the organic membrane resin insulating barrier as the photoresist etching.For obtaining contact performance preferably by the contact hole portion of conducting about the gold goal and the position of G layer metal and D layer metal connecting portion etc. at portion of terminal, periphery, common way is with the etching contact hole and removes these regional photosensitive organic films and utilize two masks to complete compare present non-organic membrane technology has like this increased a mask again more.For reducing cost and reducing operation, the manufacture method (be designated hereinafter simply as the organic membrane periphery for convenience of description and keep technology) of not removing inessential reserve area photosensitive organic film behind the intact contact hole of etching is arranged also.But by this manufacturing process, in the terminal part because the existence of big section difference causes problems such as the excessive and crimping of resistance is bad easily, though can reduce the contact resistance of portion of terminal by etching Dummy hole to a certain extent, the contact resistance still bigger [a day spy opens 2002-328395] of comparing and utilizing the portion of terminal that present non-organic membrane technology makes.In addition in contact hole part because the degree of depth in hole equals the thickness (thousands of dust) that the thickness (normally several microns) of organic membrane adds inorganic insulating membrane, cause through hole dark excessively, occur ITO easily and cover situations such as bad.In addition in adopting seal, sealing materials, add gold goal and be used as the occasion of common electrode conducting technology up and down, also cause contact resistance excessive.If the organic membrane of sealing-in glue part fails to remove in addition, then must be directly on the softer organic membrane of material, apply sealing-in glue, cause difficulty of the thick control ratio of box, it is bad to be prone to contact performance, the reliability problem, the frame nurse such as draws at problem.
Fig. 9 a～9d is depicted as present employing organic membrane periphery when keeping technology at the design sketch of contact hole part and terminal part, wherein Fig. 9 a is the contact hole portion vertical view of gate metal layer and signal electrode metal level, Fig. 9 b is the sectional view of section line AA ' shown in Fig. 9 a, Fig. 9 c is the vertical view of gate metal layer portion of terminal, Fig. 9 d is the sectional view of section line BB ' shown in Fig. 9 c, and situation is similar therewith in D side terminal portion; Figure 10 a～10c is depicted as when present employing organic membrane is peripheral to keep technology at sealing-in glue design sketch (adopting the occasion of gold goal as upper/lower electrode conducting means) partly, wherein Figure 10 b is the local amplification plan view of position shown in Figure 10 a, and Figure 10 c is the sectional view of section line CC ' shown in Figure 10 b.
Above-mentioned organic membrane technology just was introduced in the manufacturing field of liquid crystal panel in recent years, and up to the present, organic membrane technology is made panel and mostly rested on laboratory stage, and the volume production product seldom.Present main flow technology does not relate to organic membrane, does not need large-area photosensitive resin reduction processing, and weakened region just is confined to form in the scope of 4-10um of transistor channel; And for large tracts of land photosensitive resin reduction process, it is not all right directly the technology of signal wiring and transistor part manufacture craft being used on the organic membrane technology, light distribution when may cause exposure is inhomogeneous, therefore need determine the distribution and the density of pattern at specific exposure machine by optical analogy and experiment.
Summary of the invention
In present manufacturing liquid crystal indicator process, the non-organic membrane structure of texture ratio that organic membrane is set under the superiors' electrode needs the mask of using more on technology, and the problem that causes operation and cost to increase proposes the present invention.
In the present invention, by the collection of analysis and data, think that be feasible with existing Reflow technology through being out of shape and expanding and be applied to large tracts of land photosensitive resin reduction process.
The objective of the invention is to, a kind of LCD device preparation method is provided, described method is a photoresist with the organic photo resin, use mask to carry out photoetching with the contact hole structure in the formation liquid crystal indicator, and the photosensitive resin of reservation specific region is as insulation course.When using mask to carry out photoetching, as long as single exposure promptly can form at least three kinds of zones on as the organic photo resin of photoresist: shading region, exposure region and minute pattern array exposure region fully fully, through heating photosensitive resin is flowed, after etching formed contact hole, the etching that remaining photosensitive resin is carried out controlled condition can be finished the making of desired structure.
Introduce as background technology, under the superiors' electrode of liquid crystal indicator, use the structure of organic photo resin insulating film to form a kind of trend at present, this rete has low-k, good paintability and the characteristic that has an even surface simultaneously, helps to improve optical characteristics and electrology characteristic.As the photonasty organism, a this resin purposes in the present invention is to finish for example making of contact hole as photosensitive resin, and another purposes is to remain in required zone as insulation course, for example because of there being distribution to wish to obtain the shielding parasitic fields, reduce the zone of stray capacitance, the zone that perhaps needs to improve flatness.Do not increasing the photoetching number of times, promptly do not increase under the number of masks prerequisite that needs to use, how only to adopt a mask to finish contact etch and the etching of organic insulation rete, and guarantee that the section difference between lower dielectric film zone and the naked diaphragm area is the technical issues that need to address of the present invention.
The present invention proposes a kind of organic photo resin that can make thus and forms three kinds or three kinds of methods with the epimere difference in single exposure, the method is used for forming contact hole on organic insulating film, and attenuate and even remove the organic insulating film in inessential zone.The organic photo resin bed is exposed into exposure area more than three kinds or three kinds in the process of photoetching, with the positivity photosensitive resin is example, particularly, can comprise the complete exposure region that photosensitive resin is removed fully in the described exposure area, photosensitive resin keeps and the complete shading region that hardens fully, and the minute pattern array region that is come by the minute pattern array exposure region on the mask.Correspondingly, for the organic photo resin bed after the exposure, the organic photo resin is removed fully in the exposure region fully, exposes it and needs etched base material (being the contact hole zone among the present invention) down; Organic photo resin-shaped in the minute pattern array exposure region becomes corresponding minute pattern array region, for example, and by the point-like matrix zone of closely-spaced netted mask pattern formation; And the organic photo resin bed of shading region keeps fully fully.
Thermoplastic photosensitive resin (being organic photoresist) not changing under the established photosensitive resin area of the pattern shape prerequisite, makes softening photosensitive resin fully mobile subsequently.Compare with complete lightproof area, the photosensitive resin of minute pattern array region has been exposed removes a part, therefore, through thermoplastic and mobile, the all softening skim photosensitive resin that flows into of point-like in the minute pattern array region or coral grating texture, its thickness is lower than the photosensitive resin rete of complete lightproof area, but greater than the complete exposure area that does not have photosensitive resin fully.In this step, what should guarantee photosensitive resin mobilely is unlikely to influence each the zone map profile that has formed with mask exposure.And, consider that photosensitive resin easily makes original pattern diminish after flowing usually, for example, when a contact hole pattern is arranged in the minute pattern array region, its edge can inwardly bounce back because the photosensitive resin of peripheral minute pattern array region flows, therefore, in the method, contact hole pattern need be made in advance greater than the required contact hole pattern of reality usually.
The organic photo resin bed is through after adding heat flow and forming above-mentioned different zone, and at first the base material to complete exposure area carries out etching, for example, adopts Wet-type etching, to finish the making of the structure of contact hole described in the present invention.Then, remaining organic photo resin bed is carried out etching, for example, adopt the method for ashing.Because the resin layer thickness after the minute pattern array region flows is less than complete shading region, under equal etching condition, when the resin bed of minute pattern array region is removed fully,, should still can keep certain thickness though the resin bed of shading region is thinned equally fully.Therefore, the insulation course that only uses a mask to finish contact hole making and inessential zone that has also just reached expection is removed, and reduces the purpose of insulation course reserve area and other area segments difference.
According to the proposed method, wherein comprise following steps:
A. use mask that photosensitive resin is exposed, described mask has at least three kinds of following exposure areas:
One or more complete shading regions are used to block incident light, form fully not exposure area;
One or more complete exposure regions are used to make incident light fully by mask, form complete exposure area;
One or more minute pattern array exposure regions, this zone are used for exposure formation minute pattern array pattern on photosensitive resin;
B. the thermoplastic photosensitive resin not changing under the established photosensitive resin area of the pattern shape prerequisite, makes softening photosensitive resin fully mobile.
As selection, can look the processing that actual needs carries out following steps, the thickness of control organic photo resin,
C. after etching forms contact hole, the remaining organic photo resin bed of photoetching is carried out dry-etching or Wet-type etching, only keep the organic photo resin of specific region.
In a concrete scheme of the present invention, the mask that forms pattern that is used to expose uses above-mentioned Reflow technology, has following area of the pattern at least:
Fully shading region is used to block incident light, forms fully not exposure area;
Exposure region is used to make incident light fully by mask fully, forms complete exposure area;
Minute pattern array exposure region, this zone are used for exposure formation minute pattern array pattern on photosensitive resin.Wherein the pattern density of minute pattern array exposure region changes according to the difference of each semi-transparent exposure region material reflectance, to regulate each regional exposure unanimity.
In the above-described mask, semi-transparent exposure region needs the zone of attenuate corresponding to organic insulating film, and its concrete zone corresponding in liquid crystal indicator comprises:
The portion of terminal zone, the gold goal technology contact hole portion zone of conducting is up and down adopted, the contact hole peripheral region in the through-hole section zone of gate metal layer and the conducting of signal electrode metal level, and pixel portion is removed lead, all the other zones on the transistor part outside the reservation resin layer region.
Advantage of the present invention is, the LCD device preparation method that is provided is provided, and the mask that is used for the method, only need single exposure can make the organic insulation film development of substrate produce at least three kinds of zones: complete shading region, complete exposure region, semi-transparent exposure region.Compare existing processes and reduced mask use operation, when enhancing productivity, also saved production cost.
Description of drawings
The application's accompanying drawing is an ingredient of instructions, can help to understand the object of the invention and advantage of the present invention better in conjunction with the description of instructions.Each the description of the drawings is as follows:
The arraying bread board synoptic diagram of Fig. 1 tradition active matrix liquid crystal display apparatus;
The array base palte that Fig. 2 adopts is usually made process flow diagram;
The gate electrode layer figure that Fig. 3 forms through first mask;
Signal electrode layer pattern and transistor figure that Fig. 4 forms through second mask;
The contact hole graph that Fig. 5 forms through the 3rd mask;
The transparency electrode figure that Fig. 6 forms through the 4th mask;
Fig. 7 a～Fig. 7 c makes signal wire and transistorized synoptic diagram for utilizing Reflow technology with a mask, and Fig. 7 a is the effect behind the exposure imaging, the small photoresist array that zone line 104 forms for exposure; Fig. 7 b flows for heating makes photoresist, the figure after the cooling, etching; Fig. 7 c is the figure after ashing, the etching;
Fig. 8 a～Fig. 8 c has shown gate wirings terminal, the transistor portion of display part and the structure of signal wire distribution terminal respectively;
Fig. 9 a～9d is depicted as present employing organic membrane periphery when keeping technology at the design sketch of contact hole part and terminal part;
At the design sketch of sealing-in glue part, wherein Figure 10 b was the local amplification plan view of position shown in Figure 10 a when Figure 10 a～10c was depicted as the peripheral reservation of present employing organic membrane technology, and Figure 10 c is the sectional view of section line shown in Figure 10 b;
Figure 11 a～Figure 11 c is for according to the technological process that is used to make contact hole layer, organic film and surperficial ITO figure of first embodiment of the invention synoptic diagram step by step;
Figure 12 a～Figure 12 c is for according to the technological process that is used to make contact hole layer, organic film and surperficial ITO figure of second embodiment of the invention synoptic diagram step by step;
Figure 13 is the figure example that possible be used for the Reflow structure of mask, and wherein Figure 13 a～13f has enumerated adaptable concrete figure respectively;
Figure 14 is the contact hole and the figure example 1 of exposed mask version possibility on every side thereof, wherein, Figure 14 a has described the size in hole on the size of actual apertures and the mask respectively with dotted line and solid line, Figure 14 b～14d is the example of contact hole shape in the concrete pattern environment, and frame of broken lines is wherein represented the size of actual apertures equally;
Figure 15 is the contact hole and the figure example 2 of exposed mask version possibility on every side thereof, wherein, Figure 15 a has described the size in hole on the size of actual apertures and the mask respectively with dotted line and solid line, Figure 15 b～15d is the example of contact hole shape in the concrete pattern environment, and frame of broken lines is wherein represented the size of actual apertures equally;
Figure 16 has shown screen surrounding terminals part photoresist removal field example;
Figure 17 has shown gate metal layer portion of terminal making example;
Figure 18 a and Figure 18 b have shown gate metal layer portion of terminal design sketch, and wherein Figure 18 b is a DD ' schematic cross-section among Figure 18 a;
Figure 19 has shown the making example of gate metal layer and signal electrode metal level conducting contact hole hole portion;
Figure 20 a and 20b have shown that gate metal layer and signal electrode metal level conducting contact hole portion handle the back design sketch, and wherein Figure 20 b is an EE ' schematic cross-section shown in Figure 20 a;
Figure 21 a and Figure 21 b have shown the design sketch after the contact hole section processes of peripheral sealing-in glue gold goal technology, and wherein Figure 21 b is a FF ' schematic cross-section shown in Figure 21 a;
Figure 22 has shown the PROCESS FOR TREATMENT process flow diagram of individual mask etching through hole portion and the inessential regional organic photo resin of attenuate.
Description of reference numerals
| 1, |
1001, |
| 2, |
1002, |
| 3, |
1003, black matrix" |
| 4, amorphous silicon layer and doped |
1004, sweep |
| 5, signal |
1005, |
| 6, go up layer insulating | 1006, |
| 7, |
1007, |
| 8, sensitization |
1008, |
| 9, contact through |
1009, |
| 101, |
1010, |
| 102, |
1011, pixel electrode |
| 103, complete |
1012, lower floor's |
| 104, the shading net region of |
31,41,51,61, |
| 105, |
32,42,52,62, the transistor portion of |
| 106, |
33,43,53,63, signal |
| 107, |
34,44,54,64, signal |
| 114, portion of |
35,45,55,65, |
| 115, sealing-in |
36,46,56,66,116, |
| 161, |
163, organic photo resin bed attenuate field |
| 164, portion of terminal | 165, sealing-in |
| 166, |
167, screen |
| 168, color |
171, the TFT side is cut off |
| 172, organic photo resin thickness weakened region | 173, the CF side is cut off line |
| 174, sealing-in glue |
Embodiment
Finish the sweep trace part successively according to present manufacturing process, transistor part needs to carry out the making of contact hole part, the making of the making of organic membrane figure and surface transparent electrode pattern after the signal wire part.Shown in Figure 11 a, at first be even coating one deck special photosensitive resin on the dielectric film that deposition is finished, this photosensitive resin softens in technological processs such as heating and has to a certain degree a flowability.Used common photosensitive resene seemingly exposes technology such as dry by the fire after super-dry after when making with aforementioned other layer patterns.
The specific requirement of above-mentioned photosensitive resin is to have high photopermeability, low dielectric constant values, and good photosensitive material amalgamation, good coated characteristic, good characteristics such as flowability, therefore at present normally adopting above-mentioned acrylic resin is photosensitive material.For the BCB resin,,,, form pattern thereon by etching therefore to the normally coated other PR of this material because itself characteristic is not suitable as photosensitive material and uses though very low specific inductive capacity is arranged.
The mask of exposure is provided with closely-spaced grid or list structure in essential regions 104, and the point-like or the lattice-shaped that stay as shown in the figure in this zone after exposing are constructed (claiming that for convenience of description this zone is the Reflow zone).And carry out leaving the complete exposure area bigger than actual needs via area on the corresponding mask version of via etch zone at needs.This is because the little cause of peristome figure when the actual opening portion that forms is than exposure after the flow process of photosensitive resin.Remove the photosensitive resin of exposure area through developing.Technology such as heat, make photosensitive resin have certain fluidity, makes that the photosensitive resin in Reflow zone is thinner than the photosensitive resin thickness of lightproof area 103 after carrying out fully flowing.Stayed three zones like this on substrate, the photosensitive resin thickness of shading region 103 is the thickest fully, and the photosensitive resin that Reflow district 104 stays is less, fully 105 no photosensitive resins of exposure region.Carry out via etch then, for example remove the inorganic insulating membrane formation through hole that complete exposure area is exposed, shown in Figure 11 b by dry carving technology.Can cover with transparent electrode layer 7, shown in Figure 11 c at the through hole position then.
The method that adopts the Reflow mode to change film thickness difference d among the figure is to adjust the width and the spacing of intermediate pattern, the i.e. condition of the spacing/width of Reflow zone map, and subsequent technique such as treatment temperature and time etc.
Particularly, it is poor that above-mentioned thickness difference d refers to the organic photo film and the section between the Reflow district organic photo film of complete lightproof area.This section difference forms after the oven dry of developing for the first time.The tolerance value that it has influence on technology that is to say that d is big more, and control is got up may be just more convenient, is unlikely to cause the light shield layer thickness thin excessively owing to crossing to carve little by little.
In addition, contact hole is partly poor with the semi-transparent part also section of existence, owing to relate to the problem of the dielectric film in protection contact hole peripheral extent field, therefore, also wishes usually it to be controlled at more than the scope of technology permission.
Change the density of the light leak grid of zones of different according to the reflectivity of each region material, regulate the exposure unanimity of each regional light-sensitive surface, obtain the thickness of the film of homogeneous by identical etching condition with this.Desirable effect is shown in Figure 11 a～11c.
Figure 13 is for being used for the Reflow regional structure figure of mask, and Figure 13 a～13f has enumerated adaptable concrete figure respectively, and these figures only are used for example, have the knack of the art technology personage and can change according to actual needs.
Figure 14, Figure 15 is a contact hole and the exposed mask version can applicable figure (or being the composite figure of Figure 17 figure) on every side, wherein, Figure 14 a, 15a have described the size in hole on the size of actual apertures and the mask respectively with dotted line and solid line, Figure 14 b～14d, 15b～15d are the example of contact hole shape in the concrete pattern environment, and frame of broken lines is wherein represented the size of actual apertures equally.
Basic technology such as embodiment 1.The same step that photosensitive resin is fully flowed through heating makes that the photosensitive resin in Reflow zone is thinner than lightproof area photosensitive resin thickness, shown in Figure 12 a～12c.The photosensitive resin thickness of shading region 103 is the thickest fully, and the photosensitive resin that Reflow district 104 stays is less, fully 105 no photosensitive resins of exposure region.Difference from Example 1 is, form different exposure areas and make photosensitive resin add heat flow, again behind the etching through hole, the integral thickness of photosensitive resin is by further attenuate, for example, can shown in Figure 12 c, reach the purpose of sense of control photopolymer resin thickness in this way by cineration technics with its attenuate.After the technology of ashing attenuate organic photo resin finished, at necessary reserve area, promptly shading region 105 had under the photosensitive organic resin film layer prerequisite of adequate thickness fully, can keep the organic photo resin bed of relative thin in the Refow zone 104.
Among this embodiment, the density that same reflectivity according to each region material changes the light leak grid of zones of different is regulated the exposure unanimity of each regional light-sensitive surface with this, obtains the thickness of the film of homogeneous by identical etching condition.Desirable effect is shown in Figure 12 a～12c.
Figure 13 is for being used for the Reflow regional structure figure of mask, and Figure 13 a～13f has enumerated adaptable concrete figure respectively, and these figures only are used for example, have the knack of the art technology personage and can change according to actual needs.
Figure 14, Figure 15 is a contact hole and the exposed mask version can applicable figure (or being the composite figure of Figure 17 figure) on every side, wherein, Figure 14 a, 15a have described the size in hole on the size of actual apertures and the mask respectively with dotted line and solid line, Figure 14 b～14d, 15b～15d are the example of contact hole shape in the concrete pattern environment, and frame of broken lines is wherein represented the size of actual apertures equally.
Use effect of the present invention
Can obtain effect as follows after the method processing by the present invention:
Surrounding terminals part photoresist is removed field (inner contact bore portion is not represented) (inside contacts bore portion and do not represent) as shown in figure 16;
Portion of terminal is made (signal metal layer portion of terminal similarly) as shown in figure 17;
Portion of terminal is handled back design sketch (signal metal layer portion of terminal similarly) shown in Figure 18 a and 18b;
The making of gate metal layer and signal electrode metal level conducting contact hole hole portion as shown in figure 19;
Gate metal layer and signal electrode metal level conducting contact hole portion handle the back design sketch as shown in figure 20;
Design sketch after the contact hole section processes of periphery sealing-in glue gold goal technology as shown in figure 21;
The PROCESS FOR TREATMENT process flow diagram of individual mask etching through hole portion and the inessential regional organic photo resin of attenuate as shown in figure 22.
The technician of the industry should be appreciated that under the prerequisite that does not break away from spirit of the present invention or principal character, the present invention can also implement with other specific forms.Therefore, by whole technical schemes of the present invention, cited embodiment just is used to illustrate the present invention rather than restriction the present invention, and the present invention is not limited to the details of describing herein.The scope of protection of present invention is defined by appending claims.
Claims (10)
1. a LCD device preparation method is a photoresist with the organic photo resin, uses mask that described organic photo resin is carried out photoetching, and the organic photo resin that keeps the specific region is characterized in that as insulation course, said method comprising the steps of:
A. use mask that photosensitive resin is exposed, described mask comprises following exposure area at least:
One or more complete shading regions are used to block incident light, form fully not exposure area;
One or more complete exposure regions are used to make incident light fully by mask, form complete exposure area;
One or more minute pattern array exposure regions, this zone are used for exposure formation minute pattern array pattern on photosensitive resin;
B. the thermoplastic photosensitive resin not changing under the established photosensitive resin area of the pattern shape prerequisite, makes softening photosensitive resin fully mobile.
2. the method for claim 1 is characterized in that, the pattern of described minute pattern array exposure region comprises closely-spaced grid and strip pattern.
3. the method for claim 1 is characterized in that, the contact hole pattern area that is used to form the contact hole structure on the mask is greater than the required contact hole area of reality.
4. the method for claim 1, it is characterized in that, when described mask comprises a plurality of minute pattern array exposure region, the density of different minute pattern array exposure region patterns changes according to its corresponding light area material reflectance, so that the exposure unanimity of each minute pattern array exposure region.
5. as each described method in the claim 1～5, it is characterized in that, further comprising the steps of:
C. after etching forms contact hole, the remaining organic photo resin bed of photoetching is carried out dry-etching or Wet-type etching, to keep the organic photo resin of specific region.
6. method as claimed in claim 5 is characterized in that described dry-etching comprises the ashing treatment process.
7. as claim 5 or 6 described methods, it is characterized in that step c also comprises:
-when the thickness of the organic photo resin in the described complete shading region reduces to a predetermined value, stop the remaining organic photo resin of described photoetching is carried out etching.
8. a mask that is used for the liquid crystal indicator manufacturing process is used for the organic insulating film of liquid crystal indicator is carried out photoetching, it is characterized in that described mask has following three kinds of area of the pattern at least:
One or more complete shading regions are used to block incident light;
One or more complete exposure regions are used to make incident light to pass through mask fully;
One or more minute pattern array exposure regions, this zone are used for exposure formation minute pattern array pattern on photosensitive resin.
9. the mask that is used for the liquid crystal indicator manufacturing process as claimed in claim 8, it is characterized in that, when described mask comprises a plurality of minute pattern array exposure region, the density of different minute pattern array exposure region patterns changes according to its corresponding light area material reflectance, so that the exposure unanimity of each minute pattern array exposure region.
10. the mask that is used for LCD device preparation method as claimed in claim 8 or 9, it is characterized in that, described semi-transparent exposure region on the mask needs the zone of attenuate corresponding to organic insulating film, and its concrete zone corresponding in liquid crystal indicator comprises following any or appoints a plurality of:
The portion of terminal zone, the gold goal technology contact hole portion zone of conducting is up and down adopted, the contact hole peripheral region in the through-hole section zone of gate metal layer and the conducting of signal electrode metal level, and pixel portion is removed lead, all the other zones on the transistor part outside the reservation resin layer region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101478815A CN101211119A (en) | 2006-12-25 | 2006-12-25 | LCD device preparation method and mask used in the method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101478815A CN101211119A (en) | 2006-12-25 | 2006-12-25 | LCD device preparation method and mask used in the method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101211119A true CN101211119A (en) | 2008-07-02 |
Family
ID=39611227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101478815A Pending CN101211119A (en) | 2006-12-25 | 2006-12-25 | LCD device preparation method and mask used in the method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101211119A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887157A (en) * | 2014-03-12 | 2014-06-25 | 京东方科技集团股份有限公司 | Optical mask plate and laser lift-off device |
| CN107658267A (en) * | 2017-09-15 | 2018-02-02 | 惠科股份有限公司 | Manufacturing method of array substrate |
| CN109856845A (en) * | 2019-03-12 | 2019-06-07 | 武汉华星光电技术有限公司 | Color membrane substrates, flexible liquid crystal panel and preparation method |
| CN110174796A (en) * | 2018-12-11 | 2019-08-27 | 友达光电股份有限公司 | The manufacturing method of display device and structure of polarized light |
| CN110764362A (en) * | 2019-01-31 | 2020-02-07 | 昆山国显光电有限公司 | Mask strip, array substrate, display screen and display device |
-
2006
- 2006-12-25 CN CNA2006101478815A patent/CN101211119A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887157A (en) * | 2014-03-12 | 2014-06-25 | 京东方科技集团股份有限公司 | Optical mask plate and laser lift-off device |
| US10434599B2 (en) | 2014-03-12 | 2019-10-08 | Boe Technology Group Co., Ltd. | Optical mask plate and laser lift-off device |
| CN107658267A (en) * | 2017-09-15 | 2018-02-02 | 惠科股份有限公司 | Manufacturing method of array substrate |
| WO2019052108A1 (en) * | 2017-09-15 | 2019-03-21 | 惠科股份有限公司 | Method for manufacturing array substrate |
| US10453963B2 (en) | 2017-09-15 | 2019-10-22 | HKC Corporation Limited | Array substrate manufacturing method |
| CN107658267B (en) * | 2017-09-15 | 2020-11-06 | 惠科股份有限公司 | Manufacturing method of array substrate |
| CN110174796A (en) * | 2018-12-11 | 2019-08-27 | 友达光电股份有限公司 | The manufacturing method of display device and structure of polarized light |
| CN110174796B (en) * | 2018-12-11 | 2022-02-25 | 友达光电股份有限公司 | Display device and method for manufacturing polarizing structure |
| CN110764362A (en) * | 2019-01-31 | 2020-02-07 | 昆山国显光电有限公司 | Mask strip, array substrate, display screen and display device |
| CN109856845A (en) * | 2019-03-12 | 2019-06-07 | 武汉华星光电技术有限公司 | Color membrane substrates, flexible liquid crystal panel and preparation method |
| US10845638B2 (en) | 2019-03-12 | 2020-11-24 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Color film substrate, flexible liquid crystal display panel and preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101211118A (en) | LCD device preparation method and mask used in the method | |
| CN100370351C (en) | Liquid crystal display device and manufacturing method thereof | |
| TWI591406B (en) | Exposure device and method of producing an active matrix display device | |
| CN100533213C (en) | Liquid crystal display panel and fabricating method thereof | |
| KR100689948B1 (en) | Liquid crystal panel, liquid crystal panel manufacturing method, liquid crystal display, and liquid crystal projector | |
| US10914998B2 (en) | Array substrate of thin-film transistor liquid crystal display device and method for manufacturing the same | |
| CN102566148B (en) | Liquid crystal display panel and method for fabricating the same | |
| CN109471279B (en) | Array substrate and liquid crystal display panel | |
| JP2001228485A (en) | Liquid crystal display panel and its manufacturing method | |
| CN103091912B (en) | Array substrate, liquid crystal panel with array substrate and manufacturing method of liquid crystal panel | |
| KR100248593B1 (en) | Active matrix substrate and its fabrication method and lcd | |
| CN101211119A (en) | LCD device preparation method and mask used in the method | |
| CN103424925A (en) | Array substrate and manufacturing method thereof, and display device | |
| CN107422543B (en) | Display panel, preparation method thereof and display device | |
| KR101082906B1 (en) | Display panel and method of manufacturing the same | |
| KR101183425B1 (en) | Method and apparatus of fabricating liquid crystal display | |
| CN101435960B (en) | Manufacturing method of liquid crystal display device array substrate | |
| JP2002055359A (en) | Method for manufacturing liquid crystal display panel | |
| KR100650400B1 (en) | array panel of liquid crystal display device and manufacturing method thereof | |
| JP3462666B2 (en) | Manufacturing method of liquid crystal display device | |
| US9780221B2 (en) | Thin film transistor substrate comprising a photoresist layer formed between a first dielectric layer and an amorphous silicon layer | |
| CN113156734B (en) | Auxiliary scattering panel, manufacturing method thereof and display device | |
| JPH1138437A (en) | Liquid crystal display device and its manufacture | |
| KR100309213B1 (en) | A method for manufacturing an lcd using a diffarctive expos ure | |
| CN100468750C (en) | Thin film transistor substrates and making method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080702 |