Background technology
Chemically mechanical polishing (Chemical Mechanical Polishing, abbreviation CMP) technology is the combination technique of mechanical skiving and chemical attack, chemical Mechanical Polishing Technique acts on the bright and clean flat surfaces of formation on the polished dielectric surface by the abrasive action of ultramicron and the chemical attack of slurry, has now become the dominant technology of semiconductor machining industry.Chemically mechanical polishing is an integrated circuit (IC) to the product of miniaturization, multiple stratification, slimming and flatening process development, also is wafer to 200mm, 300mm and even larger diameter transition, enhances productivity, reduces the technology of manufacturing cost and substrate globalize planarization indispensability.For instance, typical logical device comprises seven road inner medium layer CMP operations, seven road metal CMP operations with shallow trench isolation from (STI) CMP operation.Therefore say that CMP technology has become the maincenter technology of the semiconductor technology of preparation integrated circuit.
A complete CMP technology mainly is made up of operations such as polishing, back cleaning and measurements.Wherein the cleaning that comprises wafer is cleaned in the back, also comprises the cleaning to each parts of chemical-mechanical polishing mathing.The purpose of back cleaning is that residual particles among the CMP and contamination are reduced to acceptable level.At present, the wafer that the back cleaning of CMP technology relates generally to after the CMP technology cleans, for example, publication number is that 1604290 Chinese patent application discloses a kind of washing liquid distribution device that is used for chemical-mechanical polisher, this washing liquid distribution device can provide the mixed liquor of deionized water and chemical reagent as cleaning fluid for chemical-mechanical polisher when cleaning, but, chemical reagent costs an arm and a leg, and before CMP process, wafer has adopted cleaning fluid to clean, and wafer also can adopt cleaning fluid to clean before follow-up deposit film technology, and also can adopt cleaning fluid to clean before after forming film, carrying out photoetching process, even after whole technology, can be that grind at the back side to the surface of the non-semiconductor components of wafer, not needing surface to the non-semiconductor components of wafer is that the back side of wafer adopts cleaning fluid to clean.And washing liquid distribution device all adopts cleaning fluid to clean to the surface of the semiconductor devices of wafer and the surface of non-semiconductor components in the prior art, causes the waste of cleaning fluid.1 be illustrated with reference to the accompanying drawings, described washing liquid distribution device is made up of chemical agent source 10, deionized water source 20 and fluid path unit 100, part in the frame of broken lines is cleaning fluid fluid path unit 100, and fluid path unit 100 has chemical reagent input 27a1, deionized water input 27a2, the first cleaning fluid output 27b1 and the one or two cleaning fluid output 27b2.In fluid path unit 100, chemical reagent input 27a1 is connected with the first cleaning fluid output 27b1 via the first adjustable throttle amount meter 11 by fluid path 27; Described deionized water input 27a2 is connected with the first cleaning fluid output 27b1 via the second adjustable throttle amount meter 21 by fluid path 27, described chemical reagent input 27a1 and deionized water input 27a2 are after respectively via the described first adjustable throttle amount meter 11 and the second adjustable throttle amount meter 21, also respectively by first end and two port chemical reagent and the deionized water mixing formation cleaning fluid of fluid path via first triple valve 22, the cleaning fluid that mixes back formation is connected with first end of second triple valve 24 via first check valve 23 by fluid path 27 afterwards, and shunt by second triple valve 24, second end by second triple valve 24 of the cleaning fluid after the shunting is connected with the first cleaning fluid output 27b1, and another the 3rd end by second triple valve 24 that mixes the cleaning fluid of back formation is connected with the second cleaning fluid output 27b2 via second control valve 32.When the surperficial 26b to the surperficial 26a of the semiconductor devices of wafer 26 and non-semiconductor components cleans, the flow of the chemical reagent of the first adjustable throttle metered valve, 11 controls is 2ml/s, the flow of the second adjustable throttle metered valve, 21 control deionized waters is 40ml/s, the volume ratio of carrying out mixed cleaning fluid at first triple valve, 22 places is 1: 20, total flow via the cleaning fluid of the first cleaning fluid output 27b1 and first jet pipe 25a output is 21ml/s, simultaneously, flow via the cleaning fluid of the second cleaning fluid output 27b2 and second jet pipe 25b output is 21ml/s, when not needing surperficial 26b to adopt cleaning fluid to clean to the non-semiconductor components of wafer 26, perhaps in other words, when only needing surperficial 26b to the non-semiconductor components of wafer 26 to adopt deionized water to clean, adopt existing washing liquid distribution device to realize, and the flow of chemical reagent is 2ml/s, consumption rate is bigger, causes the technology cost to increase.
Summary of the invention
The problem that the present invention solves is the paired cleaning fluid output of existing washing liquid distribution device, every pair of cleaning fluid output can't be realized a cleaning fluid output output cleaning fluid, another cleaning fluid output output deionized water causes the waste of cleaning fluid simultaneously.
For addressing the above problem, the invention provides a kind of washing liquid distribution device, comprising: deionized water source; Chemical agent source; Cleaning fluid fluid path unit, described cleaning fluid fluid path unit has: at least one deionized water input is connected with deionized water source; At least one chemical reagent input is connected with chemical agent source; With one or more pairs of cleaning fluid outputs, described deionized water input all is connected with the first cleaning fluid output of every pair of cleaning fluid output by fluid path with the chemical reagent input; Described deionized water input directly is connected with the second cleaning fluid output of every pair of cleaning fluid output by the fluid path in the fluid path unit.
Described chemical reagent input is not connected with each cleaning fluid output via at least one adjustable throttle amount score by fluid path, described deionized water input is not connected with each cleaning fluid output via at least one adjustable throttle amount score by the fluid path unit.
In the described fluid path unit, described chemical reagent input also is connected with the first cleaning fluid output of every pair of cleaning fluid output via at least one check valve after via described adjustable throttle amount meter.
In the described fluid path unit, described chemical reagent input and deionized water input are after respectively via described adjustable throttle amount meter, also by first end and two port chemical reagent and the deionized water mixing formation cleaning fluid of fluid path via first triple valve, the 3rd end of described first triple valve is connected with the first cleaning fluid output of every pair of cleaning fluid output via check valve.
In the described fluid path unit, the 3rd end of described first triple valve is connected with first end of second triple valve via check valve by fluid path, and second end of described second triple valve is connected with the first cleaning fluid output of every pair of cleaning fluid output by fluid path; The 3rd end of described second triple valve is connected with the second cleaning fluid output of every pair of cleaning fluid output via at least one control valve by fluid path.
In the described fluid path unit, described deionized water input directly is connected with the second cleaning fluid output of every pair of cleaning fluid output with control valve via at least one adjustable flow meter by fluid path.
In the described fluid path unit, described deionized water input directly is connected with the second cleaning fluid output of every pair of cleaning fluid output via at least one adjustable flow meter by fluid path.
Described chemical reagent is a citric acid.
Compared with prior art, the present invention has the following advantages:
1, the invention provides a kind of washing liquid distribution device, described washing liquid distribution device has paired output, in every pair of cleaning fluid output, can realize a cleaning fluid output output cleaning fluid and another cleaning fluid output output deionized water simultaneously, promptly in not high to the surperficial surface requirements of the non-semiconductor components of wafer, can adopt cleaning fluid to clean to the surface of the semiconductor devices of wafer, simultaneously washed with de-ionized water is adopted on the surface of the non-semiconductor components of wafer, the dosage of chemical reagent can be reduced half, reduce the technology cost.
2, the present invention also provides a kind of cleaning method that adopts the wafer of above-mentioned washing liquid distribution device, go to cleaning fluid to the surface of the semiconductor devices of wafer to clean by an output in every pair of cleaning fluid output, another output deionized water to surface of the non-semiconductor components of wafer in the every pair of cleaning fluid output is cleaned, the dosage of chemical reagent can be reduced half, reduce the technology cost.
The specific embodiment
Essence of the present invention is to provide a kind of washing liquid distribution device that is used for chemical-mechanical polisher, described deionized water input all is connected with the first cleaning fluid output of every pair of cleaning fluid output by fluid path with the chemical reagent input, the described implication that all is connected is that described deionized water can export cleaning fluid output mixing output respectively to chemical reagent, perhaps mix output or other mapping modes again, should too much not limit protection domain of the present invention at this in inside, fluid path unit; Described deionized water input directly is connected with the second cleaning fluid output of every pair of cleaning fluid output by the fluid path in the fluid path unit; the described implication that directly is connected is for only to export deionized water at the second cleaning fluid output; the deionized water input can be undertaken directly being connected with the second cleaning fluid output by adjustable throttle amount meter or control valve; the chemical reagent input can be connected with the second cleaning fluid output with control valve by adjustable throttle amount meter, should too much not limit protection scope of the present invention at this.
Below in conjunction with accompanying drawing and specific embodiment the specific embodiment of the present invention is done a detailed description.
The present invention at first provides a kind of first embodiment that is used for the washing liquid distribution device of chemical-mechanical polisher, comprising: deionized water source; Chemical agent source; Cleaning fluid fluid path unit, described cleaning fluid fluid path unit has: at least one deionized water input is connected with deionized water source; At least one chemical reagent input is connected with chemical agent source; With one or more pairs of cleaning fluid outputs, described deionized water input all is connected with the first cleaning fluid output of every pair of cleaning fluid output by fluid path with the chemical reagent input; Described deionized water input directly is connected with the second cleaning fluid output of every pair of cleaning fluid output by the fluid path in the fluid path unit.
With reference to shown in Figure 2, described washing liquid distribution device is made up of chemical agent source 10, deionized water source 20 and fluid path unit 200, part in the frame of broken lines is cleaning fluid fluid path unit 200, according to present embodiment, cleaning fluid fluid path unit 200 has chemical reagent input 27a1, deionized water input 27a2, cleaning fluid output 27b1 and cleaning fluid output 27b2.In the cleaning liquid path unit, chemical reagent input 27a1 is connected with the first cleaning fluid output 27b1 via the first adjustable throttle amount meter 11 by fluid path 27; Described deionized water input 27a2 is connected with the first cleaning fluid output 27b1 via the second adjustable throttle amount meter 21 by fluid path 27, described chemical reagent input 27a1 and deionized water input 27a2 are after respectively via the described first adjustable throttle amount meter 11 and the second adjustable throttle amount meter 21, also respectively by first end and two port chemical reagent and the deionized water mixing formation cleaning fluid of fluid path via first triple valve 22, the cleaning fluid that mixes back formation is connected with first end of second triple valve 24 via first check valve 23 by fluid path 27 afterwards, and shunt by second triple valve 24, second end by second triple valve 24 of the cleaning fluid after the shunting is connected with the first cleaning fluid output 27b1, and another the 3rd end by second triple valve 24 that mixes the cleaning fluid of back formation is connected with the second cleaning fluid output 27b2 via second control valve 32.Simultaneously, described deionized water input 27a2 and be connected with the second cleaning fluid output 27b2 with first control valve 31 via the 3rd adjustable throttle amount meter 28 successively by fluid path 27, described second control valve 32, first control valve 31 and the second cleaning fluid output 27b2 are connected by the 4th triple valve 30.
Described fluid path 27 is known metal liquid pipeline of present technique field personnel and plastic liquid pipeline.Described first control valve 31, second control valve 32 can be solenoid electric valve or Pneumatic and manual valve.Described deionized water input 27a2 is connected with deionized water source 20, described chemical reagent input 27a1 is connected with chemical agent source 10, it should be noted that deionized water input 27a2 of the present invention can be formed by fluid pipeline that is used for being connected with deionized water source 20 or chemical agent source 10 etc. with chemical reagent input 27a1.Equally, the first cleaning fluid output 27b1, the second cleaning fluid output 27b2 also can be the formation such as fluid pipeline of outwards exporting cleaning fluid, and the number of cleaning fluid output has no particular limits, and can reasonably select as required.Acting as of described first check valve 23 prevents that mixed-liquor return from causing pollution to go to chemical agent source 10 and ion water source 20.
According to the cleaning fluid fluid path unit 200 of present embodiment, when needs were outwards exported cleaning fluid, at first, first control valve 31, second control valve 32 were closed condition, regulated the flow of the first adjustable flow meter, 11 control chemical reagent; Regulate the flow of the second adjustable flow meter, 21 control deionized waters, mix with deionized water at first triple valve, 22 place's chemical reagent; Arrive the first cleaning fluid output 27b1 and the first jet pipe 25a via first check valve 23, second triple valve 24; Spray to the surperficial 26a of the semiconductor devices of wafer 26 then by the first jet pipe 25a.Simultaneously, open first control valve 31, deionized water input 27a2 arrives the second cleaning fluid output 27b2 and the second jet pipe 25b via the 3rd adjustable throttle amount meter 28, first control valve 31 the 4th triple valve 30 successively; Spray to the surperficial 26b of the non-semiconductor components of wafer 26 then by the second jet pipe 25b.
When the cleaning device of first control valve 31 being closed, second control valve 32 is prior art when opening, therefore can whether adopt the mixed liquor of chemical reagent and deionized water to clean neatly to the back side of wafer according to actual needs.
An embodiment as present embodiment, when adopting washing liquid distribution device of the present invention to join the fortune cleaning fluid, close second control valve 32, the flow of the chemical reagent of the first adjustable throttle metered valve, 11 controls is 1ml/s, the flow of the second adjustable throttle metered valve, 21 control deionized waters is 20ml/s, the volume ratio of carrying out mixed cleaning fluid at first triple valve, 22 places is 1: 20, total flow via the cleaning fluid of the first cleaning fluid output 27b1 and first jet pipe 25a output is 21ml/s, simultaneously, the flow of the 3rd adjustable throttle metered valve 28 control deionized waters is 20ml/s, open first control valve 31, the de-ionized water flow rate that arrives the second jet pipe 25b through the 4th triple valve 30 and the second cleaning fluid output 27b2 is 20ml/s, as seen, only differ 1ml/s by the cleaning fluid of the first jet pipe 25a and second jet pipe 25b ejection and the flow of deionized water (as shown in phantom in Figure 3), its difference in flow can not cause wafer 26 to break away from the roller of placing wafer, therefore can ignore, and compared with prior art, the flow of chemical reagent is reduced to 1ml/s by the 2ml/s of prior art, has reduced half.
Provide the second embodiment of the present invention with reference to Fig. 3, part in the frame of broken lines is cleaning fluid fluid path unit 300, compare with fluid path unit 200, in cleaning fluid fluid path unit 300, it is cleaning fluid that chemical reagent and deionized water mix the formation mixed liquor at first triple valve 22; The cleaning fluid that mixes back formation directly is connected with the first cleaning fluid output 27b1 via first check valve 23 by fluid path 27 afterwards.Simultaneously, described deionized water input 27a2 and directly be connected with the second cleaning fluid output 27b2 via the 3rd adjustable throttle amount meter 28 by fluid path 27 has reduced first control valve 31, second control valve 32, second triple valve 24 and the 4th triple valve 30.In addition, do not have the different of other, do not repeat them here with first embodiment.
According to the cleaning fluid fluid path unit 300 of present embodiment, when needs are outwards exported cleaning fluid and carried out clean wafers, at first, regulate the flow of the first adjustable flow meter, 11 control chemical reagent; Regulate the flow of the second adjustable flow meter, 21 control deionized waters, mix with deionized water at first triple valve, 22 place's chemical reagent; Arrive the first cleaning fluid output 27b1 and the first jet pipe 25a via first check valve 23.Simultaneously, deionized water input 27a2 arrives the second cleaning fluid output 27b2 and the second jet pipe 25b via the 3rd adjustable throttle amount meter 28.
Washing liquid distribution device of the present invention can also be provided with different control valves and carry out the opening of fluid path, closed control in each fluid path, do not exceed the scope of protection of the invention at this.
The present invention gives the cleaning method of wafer of the washing liquid distribution device of a kind of employing first embodiment, comprising: deionized water source is provided; Chemical agent source is provided; Cleaning fluid fluid path unit is provided, and described cleaning fluid fluid path unit has: at least one deionized water input is connected with deionized water source; At least one chemical reagent input is connected with chemical agent source; With one or more pairs of cleaning fluid outputs; From the deionized water of deionized water input input, from chemical reagent input input chemical reagent; In the every pair of cleaning fluid output one exports deionized water and the chemical reagent surface with semiconductor devices to wafer simultaneously, and another output deionized water in the every pair of cleaning fluid output is to the surface of the non-semiconductor components of wafer.
With reference to Fig. 2, before cleaning, all control valves comprise that first control valve 31, second control valve 32 are closed condition, regulate the flow of the first adjustable flow meter, 11 control chemical reagent; Regulate the flow of the second adjustable flow meter, 21 control deionized waters, chemical reagent mixes at first triple valve, 22 places with deionized water; Mixed liquor arrives the first cleaning fluid output 27b1 and the first jet pipe 25a via first check valve 23, second triple valve 24; Spray to the surperficial 26a of the semiconductor devices of wafer 26 then by the first jet pipe 25a.Simultaneously, open first control valve 31, deionized water input 27a2 arrives the second cleaning fluid output 27b2 and the second jet pipe 25b via the 3rd adjustable throttle amount meter 28, first control valve 31 the 4th triple valve 30 successively; Spray to the surperficial 26b of the non-semiconductor components of wafer 26 then by the second jet pipe 25b.Described wafer is arranged on the roller of loaded with wafers, when the surperficial 26b that by cleaning fluid is the non-semiconductor components of the surperficial 26a of semiconductor devices of chemical reagent and washed with de-ionized water wafer and washed with de-ionized water wafer 26 is the back side of wafer 26, described roller is rotated, the drive wafer is rotated, the speed of described roller rotation is 30 to 70rpm, described scavenging period is 60 to 100s, after the cleaning, the chemical mechanical polishing slurry remnants of the surperficial 26b of the surperficial 26a of semiconductor devices of wafer 26 and non-semiconductor components have been removed.
As an embodiment of the invention, the speed of described roller rotation is 50rpm, and described scavenging period is 80s.
The present invention gives the cleaning method of wafer of the washing liquid distribution device of a kind of employing second embodiment, with reference to Fig. 3, regulates the flow of the first adjustable flow meter, 11 control chemical reagent; Regulate the flow of the second adjustable flow meter, 21 control deionized waters, chemical reagent mixes at first triple valve, 22 places with deionized water; Arrive the first cleaning fluid output 27b1 and the first jet pipe 25a via first check valve 23, spray to the surperficial 26a of the semiconductor devices of wafer 26 then by the first jet pipe 25a.Simultaneously, deionized water input 27a2 arrives the second cleaning fluid output 27b2 and the second jet pipe 25b via the 3rd adjustable throttle amount meter 28, is sprayed to the surperficial 26b of the non-semiconductor components of wafer 26 then by the second jet pipe 25b.Described wafer is arranged on the roller of loaded with wafers, when the surperficial 26b that by cleaning fluid is the non-semiconductor components of the surperficial 26a of semiconductor devices of chemical reagent and washed with de-ionized water wafer and washed with de-ionized water wafer 26 is the back side of wafer 26, described roller is rotated, the drive wafer is rotated, the speed of described roller rotation is 30 to 70rpm, described scavenging period is 60 to 100s, after the cleaning, the chemical mechanical polishing slurry remnants of the surperficial 26b of the surperficial 26a of semiconductor devices of wafer 26 and non-semiconductor components have been removed.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.