CN101202307A - Floating gate flash memory device and method for making floating gate - Google Patents
Floating gate flash memory device and method for making floating gate Download PDFInfo
- Publication number
- CN101202307A CN101202307A CNA2006101193948A CN200610119394A CN101202307A CN 101202307 A CN101202307 A CN 101202307A CN A2006101193948 A CNA2006101193948 A CN A2006101193948A CN 200610119394 A CN200610119394 A CN 200610119394A CN 101202307 A CN101202307 A CN 101202307A
- Authority
- CN
- China
- Prior art keywords
- floating boom
- floating
- control gate
- silicon dioxide
- floating gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Non-Volatile Memory (AREA)
Abstract
The invention discloses a floating gate flash memory device, and the floating gate is a concave shape, two ends of which are provided with protuberant cusps, while a control gate is Z-shaped and the corner position is vertical. The control gate comprises a body and a coverage, wherein, the control gate body is positioned at one side of the floating gate, and the coverage of the control gate covers the floating gate completely, and the floating gate and the coverage of the control gate are separated by silicon dioxide. The invention also discloses a manufacturing method of the floating gate in the floating gate flash memory device, and the steps are as follows: growing silicon dioxide and silicon nitride on the polysilicon, carrying out etching to obtain a shallow groove, then growing silicon dioxide again in the shallow groove, and removing the part beyond the shallow groove to obtain the floating gate structure. The manufacturing method of the floating gate in the floating gate flash memory device has the advantages of simple steps, being easy to realize, higher wiping efficiency of the manufactured floating gate and better durability.
Description
Technical field
The present invention relates to a kind of structure of flush memory device, especially a kind of floating gate flash memory device.The invention still further relates to the manufacture method of floating boom in a kind of floating gate flash memory device.
Background technology
Existing floating gate flash memory device can be referring to shown in Figure 1, comprise source electrode 2 and drain electrode 1, above described source electrode 2 and the gap between 1 of draining, be provided with multi-crystal silicon floating bar 4 and control gate 5, described floating boom 4 and described source electrode 2 and drain and be separated with silicon dioxide layer 3 between 1, the upper limb of described floating boom 4 is the arcs of two ends to upper process, described control gate 5 comprises body part 51 and cover part 52, the body part 51 of described control gate 5 is positioned at a side of described floating boom, the lower edge of the cover part 52 of described control gate 5 is half arc, the cover part 52 of described control gate 5 half of described floating boom 4 covered.When carrying out " wiping " operation, shown in arrow among Fig. 1, control gate 5 connects high voltage, and source electrode 2 and drain electrode 1 connect low-voltage, and electronics flows into control gate 5 from the tip on floating boom 4 left sides.This structure makes the efficient of wiping and durability be not easy optimization and improvement.
Summary of the invention
Technical problem to be solved by this invention provides a kind of floating gate flash memory device, and it is higher to reach wiping efficient, the better effect of durability.
For solving the problems of the technologies described above, the technical scheme of floating gate flash memory device of the present invention is, comprise source electrode and drain electrode, above gap between described source electrode and the drain electrode, be provided with multi-crystal silicon floating bar and control gate, be separated with silicon dioxide layer between described floating boom and described source electrode and the drain electrode, described floating boom is " recessed " font of the wedge angle of the oriented upper process in two ends, described control gate is all vertical " Z " font of corner location, described control gate comprises body part and cover part, the bottom of described " Z " font control gate is a body part, the top of described " Z " font control gate is the cover part, the body part of described control gate is positioned at a side of described floating boom, the cover part of described control gate covers described floating boom fully, is separated with silicon dioxide between the cover part of described floating boom and described control gate.
Another technical problem to be solved by this invention is, the manufacture method of floating boom in a kind of above-mentioned floating gate flash memory device is provided, and its step is simple, is easy to realize that it is higher that the floating boom of producing can reach wiping efficient, the better effect of durability.
For solving the problems of the technologies described above, the manufacture method of floating boom comprises the steps: in the floating gate flash memory device of the present invention
(1) deposit polysilicon, growthing silica layer, deposit silicon nitride layer afterwards;
(2) do the silicon nitride that removes the floating boom band of position quarter;
(3) do the silicon dioxide of carving the removal floating boom band of position, and be positioned at the non-perpendicular dried shallow ridges that carves in the floating boom band of position on polysilicon, the bottom of described shallow ridges is flat, and sidewall has the gradient;
(4) deposit silicon dioxide fills up shallow ridges once more;
(5) cmp is removed the floating boom position silicon dioxide of (4) step deposit in addition, exposes silicon nitride layer fully;
(6) etch away the floating boom band of position silicon nitride layer and the silicon dioxide layer of (1) step deposit in addition;
(7) be etched away not the polysilicon that the silicon dioxide that obtained by (5) step covers.
Its step of the manufacture method of floating boom is simple in the floating gate flash memory device of the present invention, is easy to realize that it is higher that the floating boom of producing can reach wiping efficient, the better effect of durability.
Description of drawings
The present invention is further detailed explanation below in conjunction with drawings and Examples:
Fig. 1 is the structural representation of existing floating gate flash memory device;
Fig. 2 is the structural representation of floating gate flash memory device of the present invention;
Fig. 3 to Fig. 9 is the schematic diagram of each step in the manufacture method of floating boom in the floating gate flash memory device of the present invention.
Reference numeral is among the figure, 1. drain electrode; 2. source electrode; 3. silicon dioxide layer; 4. floating boom; 5. control gate; 51. control gate body part; 52. control gate cover part; 6. silicon dioxide; 7. polysilicon; 8. silicon dioxide layer; 9. silicon nitride; 10. shallow ridges; 11. silicon dioxide.
Embodiment
The structure of floating gate flash memory device of the present invention can be referring to shown in Figure 2, comprise source electrode 2 and drain electrode 1, above described source electrode 2 and the gap between 1 of draining, be provided with multi-crystal silicon floating bar 4 and control gate 5, described floating boom 4 and described source electrode 2 and drain and be separated with silicon dioxide layer 3 between 1, " recessed " font of the wedge angle that described floating boom 4 is the oriented upper process in two ends, described control gate 5 is all vertical " Z " font of corner location, described control gate 5 comprises body part 51 and cover part 52, the bottom of described " Z " font control gate 5 is a body part 51, the top of described " Z " font control gate 5 is cover part 52, the body part 51 of described control gate 5 is positioned at a side of described floating boom 4, the cover part 52 of described control gate 5 covers described floating boom 4 fully, is separated with silicon dioxide 6 between the cover part 52 of described floating boom 4 and described control gate 5.The lower edge of the cover part 52 of described control gate 5 is flat.
The said structure that floating gate flash memory device of the present invention adopted is compared with existing floating gate flash memory device structure, makes that the wedge angle of floating boom 4 is sharper, and the cover part 52 of control gate 5 covers floating boom 4 fully, improved wiping efficient greatly, and durability is better.
The present invention also provides the manufacture method of floating boom in a kind of above-mentioned floating gate flash memory device, comprises the steps:
(1) the deposit polysilicon 7, growthing silica layer 8, and the deposit silicon nitride layer 9 afterwards, and as shown in Figure 3, growthing silica layer 8 can adopt the method for thermal oxidation;
(2) do the silicon nitride that removes the floating boom band of position quarter, as shown in Figure 4;
(3) do the silicon dioxide of carving the removal floating boom band of position, and be positioned at the non-perpendicular dried shallow ridges 10 that carves in the floating boom band of position on polysilicon 7, the bottom of described shallow ridges is flat, and sidewall has the gradient, as shown in Figure 5;
(4) deposit silica 11 fills up shallow ridges once more, as shown in Figure 6;
(5) cmp is removed the floating boom position silicon dioxide of (4) step deposit in addition, exposes silicon nitride layer 9 fully, thereby has formed the silicon dioxide 6 that is isolated between described floating boom and the control gate, as shown in Figure 7;
(6) etch away the floating boom band of position silicon nitride layer and the silicon dioxide layer of (1) step deposit in addition, only remaining polysilicon 7 and the silicon dioxide 6 that has shallow ridges, as shown in Figure 8;
(7) be not etched away the polysilicon 7 that the silicon dioxide 6 that obtained by (5) step covers, thereby obtain floating boom 4, as shown in Figure 9.
In sum, the preparation method step of floating boom is simple in the floating gate flash memory device of the present invention, is easy to reality Existing, compare with existing floating gate flash memory device, by floating in the floating gate flash memory device provided by the present invention It is higher that the floating boom that grid preparation method is produced can reach wiping efficient, the better effect of durability.
Claims (5)
1. floating gate flash memory device, comprise source electrode and drain electrode, above gap between described source electrode and the drain electrode, be provided with multi-crystal silicon floating bar and control gate, be separated with silicon dioxide layer between described floating boom and described source electrode and the drain electrode, it is characterized in that, described floating boom is " recessed " font of the wedge angle of the oriented upper process in two ends, described control gate is all vertical " Z " font of corner location, described control gate comprises body part and cover part, the bottom of described " Z " font control gate is a body part, the top of described " Z " font control gate is the cover part, the body part of described control gate is positioned at a side of described floating boom, the cover part of described control gate covers described floating boom fully, is separated with silicon dioxide between the cover part of described floating boom and described control gate.
2. floating gate flash memory device according to claim 1 is characterized in that, the lower edge of the cover part of described control gate is flat.
3. the manufacture method of floating boom in the floating gate flash memory device as claimed in claim 1 is characterized in that, comprises the steps:
(1) deposit polysilicon, growthing silica layer, deposit silicon nitride layer afterwards;
(2) do the silicon nitride that removes the floating boom band of position quarter;
(3) do the silicon dioxide of carving the removal floating boom band of position, and be positioned at the non-perpendicular dried shallow ridges that carves in the floating boom band of position on polysilicon, the bottom of described shallow ridges is flat, and sidewall has the gradient;
(4) deposit silicon dioxide fills up shallow ridges once more;
(5) cmp is removed the floating boom position silicon dioxide of (4) step deposit in addition, exposes silicon nitride layer fully;
(6) etch away the floating boom band of position silicon nitride layer and the silicon dioxide layer of (1) step deposit in addition;
(7) be etched away not the polysilicon that the silicon dioxide that obtained by (5) step covers.
4. the manufacture method of floating boom is characterized in that in the floating gate flash memory device according to claim 3, described (1) one-step growth silicon dioxide, the method growthing silica of employing thermal oxidation.
5. the manufacture method of floating boom is characterized in that in the floating gate flash memory device according to claim 3, and described (7) step is etched away the polysilicon that is not covered by silicon dioxide, adopts silicon/silicon dioxide to select to carry out etching than high dry etching method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101193948A CN101202307A (en) | 2006-12-11 | 2006-12-11 | Floating gate flash memory device and method for making floating gate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101193948A CN101202307A (en) | 2006-12-11 | 2006-12-11 | Floating gate flash memory device and method for making floating gate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101202307A true CN101202307A (en) | 2008-06-18 |
Family
ID=39517355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101193948A Pending CN101202307A (en) | 2006-12-11 | 2006-12-11 | Floating gate flash memory device and method for making floating gate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101202307A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157655A (en) * | 2014-08-27 | 2014-11-19 | 上海华力微电子有限公司 | SONOS flash memory device and compiling method thereof |
-
2006
- 2006-12-11 CN CNA2006101193948A patent/CN101202307A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157655A (en) * | 2014-08-27 | 2014-11-19 | 上海华力微电子有限公司 | SONOS flash memory device and compiling method thereof |
| CN104157655B (en) * | 2014-08-27 | 2020-02-21 | 上海华力微电子有限公司 | SONOS flash memory device and compiling method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101901807B (en) | Channel schottky barrier diode rectifying device and manufacturing method | |
| TW200629418A (en) | Method of making a double gate semiconductor device with self-aligned gates and structure thereof | |
| CN102696108A (en) | Method of making a semiconductor structure useful in making a split gate non-volatile memory cell | |
| JP2007184518A (en) | Method for forming semiconductor device having fin structure | |
| TWI251310B (en) | Nonvolatile memory fabrication methods comprising lateral recessing of dielectric sidewalls at substrate isolation regions | |
| CN105655231A (en) | Etching mask group and substrate etching method applying same | |
| CN103094087A (en) | Method of etching groove polycrystalline silicon gate | |
| CN101202307A (en) | Floating gate flash memory device and method for making floating gate | |
| CN101667581A (en) | Separated grid type embedded layer float grid nonvolatile storage unit and manufacturing method thereof | |
| CN101901808B (en) | Trench-type Schottky-barrier diode rectifier and preparation method | |
| CN104517824A (en) | Manufacturing method of groove type bilayer gate | |
| CN107331620A (en) | Low pressure super node MOSFET electric leakage of the grid ameliorative way | |
| CN101866849B (en) | Method for preparing oxide film at bottom of trench | |
| CN101202309A (en) | Floating gate flash memory device | |
| CN101620996B (en) | Method for preparing gate oxidation layer | |
| CN101202308A (en) | Floating gate flash memory device structure | |
| CN101432858A (en) | Programming and erasing structure for a floating gate memory cell and method of making | |
| CN103035500B (en) | Formation method of trench gate | |
| TWI447809B (en) | Protuberant structure and method for making the same | |
| CN106409748A (en) | Semiconductor component and manufacturing method thereof | |
| CN105655450A (en) | Passivation layer deposition method of high-voltage LED chip | |
| CN103871884B (en) | The manufacture method of fin formula field effect transistor | |
| CN101127319A (en) | Method for reducing STI edge current leakage | |
| CN108054091A (en) | A kind of method for promoting MOS device grid-control ability | |
| CN100446186C (en) | Floating grid preparation method used for grid dividing structure flash memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20080618 |