CN101197334A - Power semiconductor module and production method thereof - Google Patents
Power semiconductor module and production method thereof Download PDFInfo
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- CN101197334A CN101197334A CNA2007100096095A CN200710009609A CN101197334A CN 101197334 A CN101197334 A CN 101197334A CN A2007100096095 A CNA2007100096095 A CN A2007100096095A CN 200710009609 A CN200710009609 A CN 200710009609A CN 101197334 A CN101197334 A CN 101197334A
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- plastic frame
- splicing ear
- edge
- terminal
- vertical edge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Abstract
The invention discloses a power semiconductor module and a method for manufacturing the same, wherein, the module comprises a connection terminal and a plastic frame. Through the matching between the gap of the plastic frame and the vertical edge of the connection terminal, between the convex part of the frame and the step of the terminal, between the lug boss of the frame and the through hole of the terminal, between the convex edge of the lug boss of the frame and the inside surface of the vertical edge of the terminal, and the between the rib of the platform of the frame and the front end of the transverse edge of the terminal, the terminal can not be pulled out in any direction when obliquely pressed in the frame from one side; therefore, the invention overcomes the disadvantages that the terminal arranged on the power module loosens due to contracting when plastics is cooled in early stage, and that the terminal is pulled out when the power module is under a bigger upward pulling force perpendicular to the bottom surface of the module in later stage; meanwhile, the invention simplifies the manufacturing technique of the plastic frame and the installation of the connection terminal.
Description
Technical field
The present invention relates to a kind of electronic devices and components, particularly relate to a kind of power semiconductor modular and preparation method thereof.
Background technology
Power semiconductor modular is a kind of electronic devices and components commonly used, is widely used in the electronic technology field.Power semiconductor modular has generally comprised shell, copper soleplate, splicing ear and DCB plate, shell is made of plastic frame and cover plate, splicing ear is installed on the plastic frame, copper soleplate is connected in the bottom of plastic frame, the DCB plate is welded on the copper soleplate, be welded with semiconductor device on the DCB plate, and be provided with the circuit that connects semiconductor device, be electrically connected with splicing ear on the plastic frame by nation's alignment.The manufacture method of a kind of power semiconductor modular of prior art, its terminal is to put into when the plastic frame injection molded of module, become one with plastic frame, Fig. 1 is the organigram of early stage power semiconductor modular, semi-conductor power module 1 ' comprise shell 2 ', copper soleplate 3 ', splicing ear 10 ' and DBC plate 4 ', the DBC plate is by ceramic wafer and last, the copper sheet that lays down constitutes, DBC plate 4 ' face mutually with shell 2 ' inboard, DBC plate 4 ' above be welded with semiconductor chip 12 ', semiconductor chip 12 ' can be IGBT, MOSFET power transistor and power diode etc., be attached thereto be aluminium wire 8 ', decide program by nation and be connected with semiconductor chip; Shell 2 ' by plastic frame 9 ' and cover plate form, plastic frame 9 ' by the requirement of technical standard arrange splicing ear 10 ', splicing ear 10 ' with semiconductor chip 12 ' between be aluminium wire 8 ' be connected by nation's alignment, for make splicing ear 10 ' be fixed on plastic frame 9 ' on, be with splicing ear 10 ' put into plastic frame mould injection mo(u)lding, make splicing ear 10 ' and plastic frame 9 ' fuse, yet, because plastic cement can shrink when cooling, this product, just cause easily plastic frame 9 ' with splicing ear 10 ' between produce and become flexible, when splicing ear 10 ' with semiconductor chip 12 ' fix on a time-out with metal wire nation, the contraction of plastic cement can nation's alignment be come off, thereby power semiconductor modular was lost efficacy owing to will cause splicing ear 10 ' loosening.The manufacture method of the another kind of power semiconductor modular of prior art, be after plastic frame is finished, terminal is pressed in the plastic frame, this method makes production technology simplify to a certain extent, also avoided simultaneously causing the loosening drawback of terminal owing to the contraction of plastic cement, Fig. 2 is the organigram of traditional power semiconductor modular, terminal 10 ' be L shaped structure, angle between the both sides of its L shaped structure is 90 °, terminal 10 ' upper punch have a salient point 13 ', this salient point 13 ' barb shape is arranged is difficult for being pulled out after terminal 10 ' from shell 2 ' fluting is inserted from top to bottom, 10 ' time of assembling terminal, be with terminal 10 ' shell 2 ' opening part 20 ' from top to bottom insert, terminal 10 ' on have salient point 13 ', it be close to shell 2 ' inwall, by its effect terminal is fixed, yet, when bigger pulling force that lead terminal is subjected to that vertical bottom face makes progress, terminal 10 ' also can be pulled out, thus power semiconductor modular was lost efficacy.
Summary of the invention
One of purpose of the present invention is to overcome the deficiency of prior art, a kind of power semiconductor modular is provided, by mutual position limiting structure is set between plastic frame and splicing ear, after making splicing ear be pressed into plastic frame, can be securely fixed in the plastic frame, even in the fixed process of nation, also can keep not loosening, avoid terminal on the early stage power model owing to the plastic cement drawback that terminal can be pulled out when cooling the time can be shunk the loosening and later stage power model that produces when the bigger pulling force that is subjected to that vertical bottom face makes progress.
Two of purpose of the present invention is to overcome the deficiency of prior art, a kind of manufacture method of power semiconductor modular is provided, be after plastic frame is finished, terminal is pressed in the plastic frame fast and firmly fixing, and in the fixed process of nation, can keep not loosening, the production technology of plastic frame and the installation of splicing ear have more been simplified, even when the bigger pulling force that lead terminal is subjected to that vertical bottom face makes progress, terminal can not be pulled out yet.
The technical solution adopted for the present invention to solve the technical problems is: a kind of power semiconductor modular comprises splicing ear, plastic frame;
Splicing ear is the L shaped structure that comprises horizontal edge and vertical edge, and its vertical edge both sides alongst are respectively equipped with contour step, and the bending place of L shaped structure is provided with the open-work to vertical edge and horizontal edge extension;
The top of plastic frame inwardly is provided with the limit lip, is interval with breach on the lip of limit, constitutes the protuberance of the vertical edge step that can compress splicing ear between the breach; Be provided with the boss that is matched with the splicing ear open-work in the inboard of plastic frame below corresponding to described breach, boss is provided with the convex edge that is used for the holding terminal; The bottom of plastic frame is provided with the platform of the horizontal edge bottom surface that is used for the jacking terminal, and platform is provided with the raised line that is used for the holding terminal;
The lateral surface of splicing ear is engaged in respectively on the medial surface and bottom platform of plastic frame, the vertical edge of splicing ear is along in the breach of the limit lip that laterally is embedded in plastic frame, the step of the vertical edge both sides of splicing ear leans respectively under the protuberance of the breach both sides of plastic frame, the open-work of splicing ear packs into the boss of plastic frame, the vertical edge medial surface of splicing ear is resisted against the convex edge on the boss, and the leading section of the horizontal edge of splicing ear is resisted against the raised line of platform.
The open-work of described splicing ear is a square opening.
The horizontal edge medial surface of described splicing ear becomes one greater than 90 ° obtuse angle with the vertical edge medial surface.
The forward position, top of the boss of described plastic frame is made as the inclined-plane.
To the through hole that has the pass-out bottom face, the boss by plastic frame between the bottom platform of plastic frame and the sidewall of plastic frame fuses along the medial surface of plastic frame at the bottom platform place of described plastic frame.
A kind of manufacture method of power semiconductor modular, comprise the installation step between splicing ear and the plastic frame, its step is the inboard that tilts to be pressed into plastic frame greater than the lateral surface of the splicing ear at 90 ° obtuse angle with being bent into, be pressed into the back and apply a power in the front end level of the horizontal edge of splicing ear, make splicing ear be engaged on the plastic frame fully, the lateral surface of the vertical edge of splicing ear reclines mutually with the medial surface of the sidewall of plastic frame, the lateral surface of the horizontal edge of splicing ear reclines mutually with the upper surface of the platform of plastic frame, the open-work of splicing ear is placed on the boss of plastic frame, become the right angle by the obtuse angle between the vertical edge of splicing ear and the horizontal edge, the convex edge of the boss of plastic frame is resisted against the inboard of the vertical edge of splicing ear, and the raised line of the platform of plastic frame is resisted against the front end of the horizontal edge of splicing ear.
A kind of power semiconductor modular of the present invention and preparation method thereof, be after plastic frame completes, splicing ear is pressed into plastic frame from medial surface, because the location is all arranged up and down, after splicing ear is pressed into plastic frame from medial surface, just splicing ear can be fixed.Therefore, after finishing at plastic frame, it is firmly fixing that terminal is pressed into plastic frame fast, and in the fixed process of nation, can keep not loosening.It not only can solve early stage power model upper terminal well owing to plastic cement shrinks the mechanical stress that produces when cooling off, and, the present invention also makes the production technology of plastic frame and the installation of splicing ear more simplify, with this structure and method thereof, when bigger pulling force that lead terminal is subjected to that vertical bottom face makes progress, terminal can not be pulled out yet.
The invention has the beneficial effects as follows, owing to adopted the L shaped structure that splicing ear is designed to comprise horizontal edge and vertical edge, its vertical edge both sides alongst are respectively equipped with contour step, the bending place of L shaped structure is provided with the open-work to vertical edge and horizontal edge extension, and the top at plastic frame inwardly is provided with the limit lip, be interval with breach on the lip of limit, constitute protuberance between the breach, be provided with the boss that is matched with the splicing ear open-work in the inboard of plastic frame below corresponding to described breach, boss is provided with the convex edge; The bottom of plastic frame is provided with platform, platform is provided with raised line, by the breach of plastic frame and cooperating of splicing ear vertical edge, the protuberance of plastic frame cooperates with the step of splicing ear, the boss of plastic frame cooperates with the open-work of splicing ear, cooperating of the vertical edge medial surface of the convex edge of the boss of plastic frame and splicing ear, cooperating of the leading section of the raised line of the platform of plastic frame and the horizontal edge of splicing ear, after making terminal tilt to be pressed into plastic frame from the side, just can not in any direction extract, avoided terminal on the early stage power model owing to the plastic cement drawback that terminal can be pulled out when cooling the time can be shunk the loosening and later stage power model that produces when the bigger pulling force that is subjected to that vertical bottom face makes progress, the production technology of plastic frame and the installation of splicing ear are more simplified.Because the horizontal edge medial surface of splicing ear and vertical edge medial surface are designed to one greater than 90 ° obtuse angle, make that splicing ear is pressed into plastic frame after, be subjected to the effect of elastic restoring force, can be close to better on the medial surface and platform of plastic frame.Because the forward position, top of the boss of plastic frame is made as the inclined-plane, the open-work of splicing ear there is the importing effect, the open-work of splicing ear can be inserted in the boss of plastic frame better, the envoy cooperatively interacts.Since at the bottom platform place of plastic frame along the medial surface of plastic frame to the through hole that has the pass-out bottom face, the effect of this open-work has two, one is the protuberance that produces during for mfg. moulding die on the plastic frame; Another is to make to form certain elastic space between the bottom platform of plastic frame and the sidewall, is pressed into and matches so that have the splicing ear at obtuse angle.
Below in conjunction with drawings and Examples the present invention is described in further detail; But a kind of power semiconductor modular of the present invention and preparation method thereof is not limited to embodiment.
Description of drawings
Fig. 1 is the organigram of early stage power semiconductor modular;
Fig. 2 is the organigram of traditional power semiconductor modular;
Fig. 3 is an organigram of the present invention;
Fig. 4 a is the local structure schematic diagram of plastic frame of the present invention;
Fig. 4 b is the local structure cutaway view of plastic frame of the present invention;
Fig. 5 a is the organigram of splicing ear of the present invention;
Fig. 5 b is the end view of splicing ear of the present invention;
Fig. 6 a is pack into the process schematic diagram one of plastic frame of splicing ear of the present invention;
Fig. 6 b is pack into the process schematic diagram two of plastic frame of splicing ear of the present invention;
Fig. 7 a is the organigram one that splicing ear of the present invention matches with plastic frame;
Fig. 7 b is the organigram two that splicing ear of the present invention matches with plastic frame.
Embodiment
Extremely shown in Figure 7 referring to Fig. 3.
Fig. 3 is the structural representation of exemplary embodiment of the present, this power semiconductor modular 1 comprises shell 2, copper soleplate 3, splicing ear 10 and DBC plate 4, DBC plate 4 is to be made of ceramic wafer 5 and the upper and lower copper sheet that lays 6,7, DBC plate 4 faces mutually with shell 2 inboards, be welded with semiconductor chip 20 above the DBC plate 4, semiconductor chip 20 can be IGBT, MOSFET power transistor and power diode etc., and what be attached thereto is aluminium wire 8, decides program by nation to be connected with semiconductor chip; Shell 2 is made up of plastic frame 9 and cover plate, and plastic frame 9 is by the requirement of the technical standard splicing ear 10 of arranging, and is that aluminium wire 8 is connected by nation's alignment between splicing ear 10 and the semiconductor chip 20.
Fig. 4 is the structural representation of the plastic frame of exemplary embodiment of the present, and the top of plastic frame 9 inwardly is provided with limit lip 93, is interval with breach 931 on the lip of limit, constitutes the protuberance 932 of the vertical edge step that can compress splicing ear between the breach 931; Be provided with the boss 94 that is matched with the splicing ear open-work in the inboard of plastic frame below corresponding to described breach, boss 94 is provided with the convex edge 941 that is used for the holding terminal; The bottom of plastic frame 9 is provided with the platform 92 of the horizontal edge bottom surface that is used for the jacking terminal, and platform 92 is provided with the raised line 921 that is used for the holding terminal; Forward position, top at the boss 94 of plastic frame 9 is made as inclined-plane 942; To the through hole 95 that has the pass-out bottom face, the boss 94 by plastic frame between the bottom platform 92 of plastic frame and the sidewall 91 of plastic frame fuses along the medial surface of plastic frame at the bottom platform place of plastic frame 9.
Fig. 5 is the structural representation of the splicing ear of exemplary embodiment of the present, splicing ear 10 is the L shaped structure that comprises horizontal edge 11 and vertical edge 12, its vertical edge 12 both sides alongst are respectively equipped with contour step 121, and the bending place of L shaped structure is provided with the open-work 13 to vertical edge and horizontal edge extension; Open-work 13 is a square opening, can certainly be the hole of other shape, and horizontal edge 11 medial surfaces of splicing ear become one greater than 90 ° obtuse angle 14 with vertical edge 12 medial surfaces.
Fig. 6 is pack into the process schematic diagram of plastic frame of the splicing ear of exemplary embodiment of the present, Fig. 7 is the organigram that the splicing ear of exemplary embodiment of the present matches with plastic frame, the manufacture method of a kind of power semiconductor modular of the present invention, comprise the installation step between splicing ear and the plastic frame, its step is the inboard that tilts to be pressed into plastic frame 9 greater than the lateral surface of the splicing ear 10 at 90 ° obtuse angle with being bent into, be pressed into the back and apply a power F in the front end level of the horizontal edge 11 of splicing ear, splicing ear 10 is engaged on the plastic frame 9 fully, the lateral surface of the vertical edge 12 of splicing ear reclines mutually with the medial surface of the sidewall 91 of plastic frame 9, the lateral surface of the horizontal edge 11 of splicing ear reclines mutually with the upper surface of the platform 92 of plastic frame, the vertical edge 12 of splicing ear is along in the breach 931 of the limit lip that laterally is embedded in plastic frame, the step 121 of the vertical edge both sides of splicing ear leans respectively the protuberance of the breach both sides of plastic frame 932 times, the open-work 13 of connecting terminal packs into the boss 94 of plastic frame, become the right angle by the obtuse angle between the vertical edge 12 of splicing ear and the horizontal edge 11, the convex edge 941 of the boss of plastic frame is resisted against the inboard of the vertical edge 12 of splicing ear, and the raised line 921 of the platform of plastic frame is resisted against the front end of the horizontal edge 11 of splicing ear.Splicing ear is packed into behind the plastic frame, the breach 931 of plastic frame matches with splicing ear vertical edge 12, the protuberance 932 of plastic frame matches with the step 121 of splicing ear, the boss 94 of plastic frame matches with the open-work 13 of splicing ear, match with vertical edge 12 medial surfaces of splicing ear in the convex edge 941 of the boss of plastic frame, the raised line 921 of the platform of plastic frame matches with the leading section of the horizontal edge 11 of splicing ear, terminal 10 can not in any direction be extracted, avoided terminal on the early stage power model owing to the plastic cement drawback that terminal can be pulled out when cooling the time can be shunk the loosening and later stage power model that produces when the bigger pulling force that is subjected to that vertical bottom face makes progress, the production technology of plastic frame and the installation of splicing ear are more simplified.
A kind of power semiconductor modular of the present invention and preparation method thereof, be after plastic frame 9 completes, splicing ear 10 is pressed into plastic frame 9 from medial surface, because the location is all arranged up and down, after splicing ear 10 is pressed into plastic frame 9 from medial surface, just splicing ear 10 can be fixed.Therefore, after finishing at plastic frame 9, it is firmly fixing that terminal 10 is pressed into plastic frame 9 fast, and in the fixed process of nation, can keep not loosening.It not only can solve early stage power model upper terminal well owing to plastic cement shrinks the mechanical stress that produces when cooling off, and, the present invention also makes the production technology of plastic frame and the installation of splicing ear more simplify, with this structure and method thereof, when bigger pulling force that lead terminal is subjected to that vertical bottom face makes progress, terminal 10 can not be pulled out yet.
The foregoing description only is used for further specifying a kind of power semiconductor modular of the present invention and preparation method thereof; but the present invention is not limited to embodiment; every foundation technical spirit of the present invention all falls in the protection range of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did.
Claims (6)
1. a power semiconductor modular comprises splicing ear, plastic frame; It is characterized in that:
Splicing ear is the L shaped structure that comprises horizontal edge and vertical edge, and its vertical edge both sides alongst are respectively equipped with contour step, and the bending place of L shaped structure is provided with the open-work to vertical edge and horizontal edge extension;
The top of plastic frame inwardly is provided with the limit lip, is interval with breach on the lip of limit, constitutes the protuberance of the vertical edge step that can compress splicing ear between the breach; Be provided with the boss that is matched with the splicing ear open-work in the inboard of plastic frame below corresponding to described breach, boss is provided with the convex edge that is used for the holding terminal; The bottom of plastic frame is provided with the platform of the horizontal edge bottom surface that is used for the jacking terminal, and platform is provided with the raised line that is used for the holding terminal;
The lateral surface of splicing ear is engaged in respectively on the medial surface and bottom platform of plastic frame, the vertical edge of splicing ear is along in the breach of the limit lip that laterally is embedded in plastic frame, the step of the vertical edge both sides of splicing ear leans respectively under the protuberance of the breach both sides of plastic frame, the open-work of splicing ear packs into the boss of plastic frame, the vertical edge medial surface of splicing ear is resisted against the convex edge on the boss, and the leading section of the horizontal edge of splicing ear is resisted against the raised line of platform.
2. a kind of power semiconductor modular according to claim 1 is characterized in that: the open-work of described splicing ear is a square opening.
3. a kind of power semiconductor modular according to claim 1 is characterized in that: the horizontal edge medial surface of described splicing ear becomes one greater than 90 ° obtuse angle with the vertical edge medial surface.
4. a kind of power semiconductor modular according to claim 1 is characterized in that: the forward position, top of the boss of described plastic frame is made as the inclined-plane.
5. a kind of power semiconductor modular according to claim 1, it is characterized in that: to the through hole that has the pass-out bottom face, the boss by plastic frame between the bottom platform of plastic frame and the sidewall of plastic frame fuses along the medial surface of plastic frame at the bottom platform place of described plastic frame.
6. the manufacture method of a power semiconductor modular as claimed in claim 1, it is characterized in that: comprise the installation step between splicing ear and the plastic frame, its step is the inboard that tilts to be pressed into plastic frame greater than the lateral surface of the splicing ear at 90 ° obtuse angle with being bent into, be pressed into the back and apply a power in the front end level of the horizontal edge of splicing ear, make splicing ear be engaged on the plastic frame fully, the lateral surface of the vertical edge of splicing ear reclines mutually with the medial surface of the sidewall of plastic frame, the lateral surface of the horizontal edge of splicing ear reclines mutually with the upper surface of the platform of plastic frame, the open-work of splicing ear is placed on the boss of plastic frame, become the right angle by the obtuse angle between the vertical edge of splicing ear and the horizontal edge, the convex edge of the boss of plastic frame is resisted against the inboard of the vertical edge of splicing ear, and the raised line of the platform of plastic frame is resisted against the front end of the horizontal edge of splicing ear.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100096095A CN100557789C (en) | 2007-09-27 | 2007-09-27 | A kind of power semiconductor modular and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100096095A CN100557789C (en) | 2007-09-27 | 2007-09-27 | A kind of power semiconductor modular and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN101197334A true CN101197334A (en) | 2008-06-11 |
| CN100557789C CN100557789C (en) | 2009-11-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007100096095A Expired - Fee Related CN100557789C (en) | 2007-09-27 | 2007-09-27 | A kind of power semiconductor modular and preparation method thereof |
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| CN (1) | CN100557789C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101325183B (en) * | 2008-07-25 | 2010-06-09 | 南京银茂微电子制造有限公司 | Ultra-thin cavity type power module and encapsulation method thereof |
| CN101453159B (en) * | 2008-12-26 | 2012-02-29 | 南京银茂微电子制造有限公司 | Power terminal having built-in power terminal |
| CN103531555A (en) * | 2013-10-24 | 2014-01-22 | 江苏宏微科技股份有限公司 | Power module comprising welding-free terminals |
| US9287231B2 (en) | 2014-04-17 | 2016-03-15 | Delta Electronics Int'l (Singapore) Pte Ltd | Package structure with direct bond copper substrate |
| CN107611102A (en) * | 2017-08-04 | 2018-01-19 | 全球能源互联网研究院有限公司 | A kind of package structure of semiconductor device |
| CN109269667A (en) * | 2018-09-15 | 2019-01-25 | 国网福建省电力有限公司 | A kind of Novel IGBT device and preparation method thereof with real-time temperature test sytem |
| CN110036703A (en) * | 2016-12-19 | 2019-07-19 | 法雷奥电机控制系统公司 | Protection band, electron power module and the electric booster manipulated by this electron power module |
| CN114557145A (en) * | 2019-09-30 | 2022-05-27 | 西门子股份公司 | Housing for an electronic module and production thereof |
-
2007
- 2007-09-27 CN CNB2007100096095A patent/CN100557789C/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101325183B (en) * | 2008-07-25 | 2010-06-09 | 南京银茂微电子制造有限公司 | Ultra-thin cavity type power module and encapsulation method thereof |
| CN101453159B (en) * | 2008-12-26 | 2012-02-29 | 南京银茂微电子制造有限公司 | Power terminal having built-in power terminal |
| CN103531555A (en) * | 2013-10-24 | 2014-01-22 | 江苏宏微科技股份有限公司 | Power module comprising welding-free terminals |
| CN103531555B (en) * | 2013-10-24 | 2016-01-20 | 江苏宏微科技股份有限公司 | Exempt from the power model of solder terminal |
| US9287231B2 (en) | 2014-04-17 | 2016-03-15 | Delta Electronics Int'l (Singapore) Pte Ltd | Package structure with direct bond copper substrate |
| CN110036703A (en) * | 2016-12-19 | 2019-07-19 | 法雷奥电机控制系统公司 | Protection band, electron power module and the electric booster manipulated by this electron power module |
| CN110036703B (en) * | 2016-12-19 | 2021-02-02 | 法雷奥电机控制系统公司 | Protective belt, electronic power module and electric supercharger controlled by electronic power module |
| CN107611102A (en) * | 2017-08-04 | 2018-01-19 | 全球能源互联网研究院有限公司 | A kind of package structure of semiconductor device |
| CN107611102B (en) * | 2017-08-04 | 2019-08-27 | 全球能源互联网研究院有限公司 | A kind of package structure of semiconductor device |
| CN109269667A (en) * | 2018-09-15 | 2019-01-25 | 国网福建省电力有限公司 | A kind of Novel IGBT device and preparation method thereof with real-time temperature test sytem |
| CN114557145A (en) * | 2019-09-30 | 2022-05-27 | 西门子股份公司 | Housing for an electronic module and production thereof |
| CN114557145B (en) * | 2019-09-30 | 2024-03-15 | 西门子股份公司 | Housing for an electronic module and production thereof |
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