CN101192539B - Device manufacture method and device electrical performance regulation method - Google Patents
Device manufacture method and device electrical performance regulation method Download PDFInfo
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- CN101192539B CN101192539B CN2006101188155A CN200610118815A CN101192539B CN 101192539 B CN101192539 B CN 101192539B CN 2006101188155 A CN2006101188155 A CN 2006101188155A CN 200610118815 A CN200610118815 A CN 200610118815A CN 101192539 B CN101192539 B CN 101192539B
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Abstract
The invention discloses a manufacturing method for a device and an adjusting method for electrical property of the device. The manufacturing method comprises the steps as follows: a substrate with at least a device which contains a lightly doped drain region and a grid is provided; the addition of oxygen is fixed according to a design value of an electric performance parameter of the device; a process of rapid thermal annealing with added oxygen is carried out to the substrate according to the adding quantity. The adjusting method comprises the steps as follows: an actual value of the electric performance parameter of the device is obtained by using sample plates; the addition of oxygen is fixed according to the design value and the actual value of the electric performance parameter of the device; a process of rapid thermal annealing with added oxygen is carried out to the substrate according to the quantity of the added oxygen. The manufacturing method and the adjusting method of the invention can produce the devices which are matched with or similar to the design value in the situation without increasing technical steps, and causes little effect on production period and production cost.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, the method for adjustment of particularly a kind of device manufacture method and device electrical performance.
Background technology
The making of semiconductor integrated circuit is extremely complicated process, and purpose is various electronic building bricks and circuit that particular electrical circuit is required, dwindles on the wafer that is produced on small size.Application difference because of device, requirement to each device electrical performance in the circuit also has nothing in common with each other, as, when device is used to out leak (OD, open drain) during circuit, can require the lightly doped drain (LDD, lightly doped drain) of device to have higher resistance value, to utilize existing in fact dividing potential drop or branch resistance to circuit; For another example, different circuit can propose different optimal value requirements to the threshold voltage of device.In the practical semiconductor manufacture process, for satisfying the various specific requirements of different components, the producer often needs part technology is carried out accommodation, shows as processing step that is used to adjust or the actual process condition that changes some technology of increasing.
During modern integrated circuits is made, with the closely-related processing step of device electrical performance be that ion injects.It is to utilize ion implantation device that specific foreign atom (Dopant) is injected in the semiconductor crystal in the mode that ion quickens that so-called ion injects, and realizes semi-conductive doping, and then changes its electric conductivity.Produce the different device of electrical property, the most direct method utilizes ion implantation technology that device electrical performance is adjusted exactly, produces the device that meets requirement on electric performance.
Application number is that 200310109227.1 Chinese patent discloses a kind of utilization ion implantation technology method of making the device with different electrical properties once more, this method is to inject by the selectivity ion the former doping situation of substrate is adjusted, and then produces the device with different threshold voltages.Fig. 1 is the existing manufacture method flow chart that can satisfy the device of different requirement on electric performance, as shown in Figure 1, adjust the threshold voltage of device, at first, substrate is carried out litho pattern handle (S101), define and to carry out the area that ion injects once more; Then, be that mask injects processing (S102) to the ion that substrate carries out once more with the photoresist, owing to only can realize the ion of substrate is injected, just realized that also the optionally ion that only area of needs is carried out injects in the zone that does not have photoresist; Then, remove photoresist (S103); Under nitrogen protection, carry out quick thermal annealing process (S104), repair because of ion injects ruined lattice, and activate its doping.Inject the technical process of ion and activation through above-mentioned selectivity once more, can proofread and correct the deviate of former ion injection rate, realize adjustment device electrical performance.
Adopt the method for a selective ion implantation technology of this increase, can produce device, the unit for electrical property parameters of different devices is conformed to its design load respectively by the adjustment that this step ion is injected process conditions with different electrical properties.But this kind device manufacture method not only needs to add multistep technologies such as photoetching, also needs to make special lithography mask version for it, and the result can cause production cycle lengthening and production cost to raise.
Except above-mentioned specific requirement by device need be produced the situation of the device with different electrical properties, ion injects when control is not good to cause the device electrical performance skew also to be needed device electrical performance is carried out extra adjustment.Along with semiconductor device develops to high speed, miniaturization, technology controlling and process in the semiconductor fabrication is had higher requirement.With the ion implantation technology is example, especially after entering 0.18 micron technology technology, not only the ion injection rate is had certain requirement, also requires the degree of depth that ion injects is also carried out more strict control, to realize shallow junction structures.Under this requirement, reduced ion implantation energy, make more difficult to the accurate control of ion injection rate, because of injecting the bad situation that device electrical performance and design load are departed from of control, ion also happens occasionally aborning, at this moment, also need the adjustment of formula that device electrical performance is remedied, adjust as adding the primary ions injection.
Be the increase of avoiding injecting number of times because of the not good ion that causes of ion implantation process control, application number is that 200310123504.4 Chinese patent application discloses the method that a kind of accurate control ion injects, this method has been installed residual gas analyser in ion implantor, utilize this analyzer that the kind and the dividing potential drop of the residual gas in the ion implantor are analyzed, adjust the pressure compensation factor in the machine more in view of the above, to reach the purpose of accurate control ion implantation concentration.This method can be strengthened the control to ion implantation technology, reduces the error of ion injection rate, has guaranteed the realization of device electrical performance to a certain extent.But it implements very complicated, need carry out big change to equipment, and in addition, this method is for the adjustment of device electrical performance parameter also underaction.
Summary of the invention
The invention discloses a kind of manufacture method of device, this method has added the oxygen of different content according to the design load of the unit for electrical property parameters of client's proposition in the rapid thermal anneal process process, produced the device that the electrical property actual value conforms to design load.In addition, the utilization adopted in this manufacture method adds the method that different amount of oxygen is adjusted device electrical performance, can also be directly used in the electrical property that electrical property in producing has been departed from the device of design load and be adjusted near design load.
The manufacture method of a kind of device provided by the invention comprises step:
Substrate is provided, and has a device that comprises lightly doped drain and grid on the described substrate at least;
Determine the addition of oxygen by the unit for electrical property parameters design load of described device;
The quick thermal annealing process that described substrate is added oxygen according to described addition.
Wherein, described unit for electrical property parameters is the resistance and/or the threshold voltage of lightly doped drain.
Wherein, preferred process conditions are, with the flow restriction of described oxygen below 10sccm, if also add nitrogen in the described fast thermal anneal process process, then with the flow-ratio control of nitrogen and oxygen between 100: 1 to 8: 2.In addition, the treatment temperature of described rapid thermal annealing is between 600 to 1100 ℃, and the processing time is between 10 seconds to 120 seconds.
The present invention has the method for adjustment of the another kind of device electrical performance of identical or relevant art feature, comprises step:
Substrate and print are provided, and have a device that comprises lightly doped drain and grid on described substrate or the print at least;
The quick thermal annealing process that described print is added oxygen;
Test the actual value of the device electrical performance parameter on the described print;
Determine the addition of oxygen by described device electrical performance parameter designing value and actual value;
The quick thermal annealing process that described substrate is added oxygen according to described addition.
Wherein, described unit for electrical property parameters is the resistance or the threshold voltage of lightly doped drain.
Wherein, preferred process conditions are, with the flow restriction of described oxygen below 10sccm, if also add nitrogen in the described fast thermal anneal process process, then with the flow-ratio control of nitrogen and oxygen between 100: 1 to 8: 2.
Compared with prior art, the present invention has the following advantages: the manufacture method of device of the present invention, in the device manufacturing after form doped region, in the thermal anneal process that original activator impurity is used, added an amount of oxygen, and control by the addition to this oxygen, produce device with different unit for electrical property parameters.Device manufacture method of the present invention can be produced the device that conforms to the device electrical performance requirement easily and flexibly under the situation that does not increase processing step, equipment is not transformed.
The method of adjustment of device electrical performance of the present invention, according to the actual electrical performance parameter of device and the deviation between the design parameter value, to need to determine in the quick thermal annealing process process amount of the oxygen that adds, with realize adjusting device actual electrical performance parameter near in addition reach the purpose of design load.Method of adjustment of the present invention implements simple and convenient, and is little to the influence of production cycle and production cost.
Description of drawings
Fig. 1 is the existing manufacture method flow chart that can satisfy the device of different requirement on electric performance;
Fig. 2 is the device architecture schematic diagram with LDD district;
Fig. 3 is the comparison diagram that does not add and add the LDD district square resistance of oxygen in annealing process;
Fig. 4 is not for adding and add the comparison diagram of the device electrical performance of oxygen in annealing process;
Fig. 5 is the device manufacture method flow chart of second embodiment of the invention;
Fig. 6 is the flow chart of the device electrical performance method of adjustment of third embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Processing method of the present invention can be widely applied in many application; and can utilize many suitable material; be to be illustrated below by preferred embodiment; certainly the present invention is not limited to this specific embodiment, and the known general replacement of one of ordinary skilled in the art is encompassed in protection scope of the present invention far and away.
The manufacture method of device of the present invention, in the element manufacturing on the substrate after form lightly doped drain and grid, this substrate is added the quick thermal annealing process of oxygen, and the oxygen content that adds is determined with the corresponding relation that the oxygen addition changes by the design load and the device electrical performance parameter of device electrical performance parameter.Usually in device manufacturing processes different components the difference of device electrical performance parameter is required mainly is to propose at the resistance of lightly doped drain and the threshold voltage of device, the former can change the dividing potential drop of device and divide the resistance situation, and the latter can have different optimal values for different devices.
For understanding the present invention better, once before device electrical performance was adjusted, device formed the process of lightly doped drain and grid to first simple knowledge.Fig. 2 is the device architecture schematic diagram with LDD district, as shown in Figure 2, earlier on substrate 200, utilize photoresist to make mask, the method of injecting or spreading with ion optionally forms well region 201 in substrate 200, use shallow ditch groove separation process between the well region (active area) of each device, to form isolated groove 202 then, then form gate oxide 203 and grid 204, follow again, just can carry out ion and inject to form lightly doped drain 210 to substrate.That injects N type ion can use phosphorus, arsenic, antimony plasma source, P type ion can use boron, boron fluoride, indium plasma source.
By among Fig. 2 as can be seen, so-called lightly doped drain 210 is after forming grid 204, with the grid is mask, the zone that utilizes ion implantation technology between source/drain contact district and raceway groove, to form with certain-length and doping content, it is positioned at grid and is close to trench edges 204 times, can provide the impurity concentration gradient for source/drain region.The formation in this LDD zone can prevent that the electric field between raceway groove and the source/drain region from strengthening fast, and the hot carrier that suppresses to produce along with the minimizing of channel region length is injected (HCI, Hot carrier injection) effect, improves the reliability of raceway groove.In addition, for some circuit, as drive drain circuit, the resistance size in the LDD zone of device has a direct impact the output characteristic of device, can have influence on dividing potential drop and the branch resistance characteristic of this device in circuit, therefore, different components may have different specific requirements to this resistance, meet the various different devices that require and will produce, just need in technology, adjust associated process conditions.
Except that the resistance in LDD district, threshold voltage also is one of important electrical quantity of MOS transistor, it is one of parameter of in manufacturing process, wanting emphasis control, the size of threshold voltage and consistency have decisive influence to the performance of circuit and even integrated system, thereby in device manufacturing processes, realize the optimal threshold magnitude of voltage of each device as far as possible.In the conventional method, can only be to inject and realize, extend the production cycle, improve production cost by substrate being carried out secondary ion to the adjustment of threshold voltage.
In the prior art, can only go on foot optionally ion and inject and realize by increasing by one the adjustment of this LDD district resistance and threshold voltage, but this method not only need increase by a step ion implantation technology, also need increase the photoetching process (comprising a series of activities such as covering photoresist, preceding baking, litho pattern, exposure, development, back baking) that is used to form the selectivity injection zone, prolonged the production cycle of device greatly, this method needs also will make special lithography mask version simultaneously, has improved production cost.Adopt device manufacture method of the present invention then to need not above-mentioned each step, only need an existing one-step rapid thermal anneal process condition is adjusted and can be realized.
So-called rapid thermal anneal process is meant after ion injects in the traditional handicraft; under the protection of high-purity gas such as nitrogen, argon gas; the processing of substrate being carried out with intensification that is exceedingly fast and transient continuous time; its objective is the lattice defect that being injected into ion and recovering to bring that rests in the interstitial void position in order to activate because of the ion injection.
And in the present invention,, not only can realize its original function by in this step process, having added oxygen--activate and inject ion and recover lattice defect, can also utilize the adjustment of this step process realization LDD district resistance value and threshold voltage.
Fig. 3 is the comparison diagram that does not add and add the LDD district square resistance of oxygen in annealing process, and as shown in Figure 3,301 is that the square resistance in the LDD district that test obtains can see that it is about 2500 ohm/sq when not adding oxygen in the annealing process among the figure; 302 for testing the LDD district square resistance that obtains behind the oxygen that adds 2sccm in annealing process among the figure, and it is worth about 3500 ohm/sq; 303 for testing the LDD district square resistance that obtains behind the oxygen that adds 4.5sccm in annealing process among the figure, and it is worth about 4300 ohm/sq.Can see, compare that adding behind the oxygen LDD square resistance of device has had and significantly improve, prove that the inventive method can effectively adjust the square resistance in device LDD district with the annealing process of oxygen not.In addition, by seeing among the figure, the resistance of device LDD district square resistance is along with the increase of oxygen addition increases, be between LDD resistance value and the oxygen addition certain corresponding relation to be arranged, so can obtain the oxygen content of required adding in the thermal anneal process according to above-mentioned relation according to the LDD resistive arrangement value of the device of client's needs in practice.
The present invention has utilized this corresponding relation of LDD district resistance and oxygen addition, according to the specific requirement of device to unit for electrical property parameters, produces satisfactory device.But what wherein also should be noted that a bit is, in fact oxygenous thermal anneal process may impact the threshold voltage of device this step: though when device size is big, device threshold voltage is constant substantially, can directly use said method that the LDD resistance value is adjusted; But when device size hour, said method can cause variations in threshold voltage, thus the method for present embodiment only to be suitable for device size big or device threshold voltage required undemanding situation.But, also just because of should oxygen containing annealing in process of step also can be influential to device threshold voltage, can also utilize this point in the production, when the client does not require the LDD resistance value of device, the threshold voltage of device is adjusted.
Fig. 4 is not for adding and add the comparison diagram of the device electrical performance of oxygen in annealing process, as shown in Figure 4, abscissa is a device threshold voltage among the figure, ordinate is the device drain saturation current, being labeled as 401,402 and 403 of rectangular block among the figure is to test the electrical performance data that does not add each device of oxygen in the annealing process that obtains, being labeled as 411,412 and 413 of diamond block is to test the electrical performance data that has added each device of 5sccm oxygen in the annealing process that obtains, wherein, 401 and 411 representatives is the device that is of a size of 10 μ m; 402 and 412 the representative be the device that is of a size of 0.18 μ m, 403 and 413 the representative be the device that is of a size of 0.16 μ m.By seeing among the figure, for larger-size device, shown in 401 among the figure and 411, in thermal anneal process, add or do not add oxygen what influence the drain saturation current and the threshold voltage of device is not all had, can see that the two is basic the coincidence, and when device size is reduced to below 0.18 micron, if in thermal anneal process, add the oxygen of certain content, the drain saturation current value that obtains device then can occur testing and remain unchanged substantially, and the situation of bigger variation takes place in threshold voltage.Shown among the figure 402 and 412, device for 0.18 micron, add the device that oxygen is annealed, its threshold voltage has been reduced to 0.472v by original 0.505v, and, shown among the figure 403 and 413, add the device that oxygen is annealed for 0.16 micron device, its variations in threshold voltage is more obvious, has reduced to 0.432v by original 0.498v.
As seen, the threshold voltage of device can reduce along with the increase of the oxygen content that is added, and can utilize this corresponding relation by the adjustment of oxygen addition being realized the adjustment to device threshold voltage.When needed threshold voltage is big, can reduce the oxygen addition, otherwise, and increase.But should be noted that when calculating the oxygen addition the influencing of device threshold voltage, also to consider the size of devices size, when device size is big, device as 10 * 10 μ m, be to utilize this step to handle the threshold voltage of device is adjusted, have only when device size reaches below 1 micron even 0.18 micron, the inventive method just can highlight significantly to the adjustment effect of threshold voltage.And the device institute that size is more little is influenced big more, thereby when utilizing different oxygen additions that the threshold voltage of device is adjusted, determine the corresponding relation of threshold voltage variation amount and oxygen addition respectively according to the difference of device size.
The first embodiment of the present invention is utilized the LDD district resistance of above-mentioned oxygen addition and device and the corresponding relation of threshold voltage just, respectively to device unit for electrical property parameters--LDD resistance value and threshold voltage are adjusted.But all influential because of the oxygen addition to the two, so present embodiment only is applicable to wherein a kind of unit for electrical property parameters of adjustment, and another kind is not had the situation of specific requirement, or, the LDD resistance value of device is had the situation of specific requirement at large-sized device.
The specific implementation step of device manufacture method first embodiment of the present invention is: provide substrate, and the device on this substrate has been made to forming lightly doped drain and grid; Then, substrate is carried out quick thermal annealing process with activator impurity and recovery lattice defect, simultaneously, also add a certain amount of oxygen in this processing procedure, the amount of the oxygen that is added is determined with the corresponding relation that the oxygen addition changes by device electrical performance parameter designing value and device electrical performance parameter.Unit for electrical property parameters wherein can be LDD resistance value or threshold voltage, and the former increases with the oxygen addition, and the latter increases with the oxygen addition to reduce.After the quick thermal annealing process by this adding oxygen, can produce the satisfactory device of unit for electrical property parameters.
Wherein, the temperature of quick thermal annealing process is arranged between 600 to 1100 ℃ usually, as is 700 ℃, 900 ℃ or 1000 ℃, and this temperature can guarantee that it is implemented in original function of the prior art--and activate and inject ion and recover lattice defect.In thermal annealing process, for the preferred condition of the addition of oxygen be: oxygen flow is less than 10sccm; Also added nitrogen commonly used in the present embodiment in aerating oxygen, at this moment, the preferred scheme of proportionate relationship between two kinds of gas is: the addition ratio of nitrogen and oxygen is preferably between 100: 1 to 8: 2, as be 50: 1 or 10: 1.Reason is that oxygen flow is excessive or proportion is too high, impacts easily for other performances of device, and is too thick as the oxide layer that may cause substrate surface to generate, and influences the carrying out of subsequent technique etc.Notice that the concrete addition of oxygen wherein is that unit for electrical property parameters by device requires determined, as, when the LDD resistance value that requires device is 3500 ohm/sq, the corresponding oxygen content that need add in the time of can determining thermal anneal process with the corresponding relation of device LDD resistance value according to oxygen addition shown in Figure 3, as shown in Figure 3, the oxygen addition of corresponding this resistance value is 2sccm, thereby as long as add the oxygen of 2sccm in thermal anneal process, just can produce the LDD resistance value is the satisfactory device of 3500 ohm/sq.For another example, device for 0.16 micron, want to produce the device that threshold voltage is 0.43v, then can be according to the oxygen addition shown in Figure 4 and the corresponding relation of device threshold voltage, add the oxygen of 5sccm in this step thermal anneal process, can produce threshold voltage is the device that meets the demands of 0.43v.
Except that above-mentioned thermal annealing condition, the thermal anneal process time in this step also has its optimal value, normally between 10 seconds to 120 seconds, as be 20 seconds, 60 seconds or 80 seconds etc., because if the processing time is oversize, may cause the device surface oxide layer too thick equally on the one hand, also unfavorable on the other hand to reducing thermal budget.
In the present embodiment, in thermal anneal process, utilize nitrogen and oxygen mix that substrate is handled, in other embodiments of the invention, can also replace nitrogen with some other inert gas, as argon gas, helium etc.
Device manufacture method in the present embodiment, under the situation that does not increase processing step, produced the different device of LDD resistance value by design load, this method does not all have big influence to production cycle and production cost, compare with traditional need mode that goes on foot the injection of selectivity ion that adds, advantage is very obvious.
The device manufacture method of present embodiment only is applicable to the LDD resistance value of device or a kind of situation about claiming in the threshold voltage, or device size is when big, the situation of making the device of Different L DD resistance value.The second embodiment of the present invention has illustrated at device size less, the device manufacture method the when client claims to the LDD resistance of device and threshold voltage again simultaneously, and this method is comparatively complicated.Fig. 5 is the process chart of the device manufacture method of second embodiment of the invention, below in conjunction with Fig. 5 the second embodiment of the present invention is described in detail.
In the present embodiment, the client has proposed requirement simultaneously to device LDD district's resistance value and device threshold voltage value.Generally, as long as in device fabrication processes, adding can make the LDD resistance of device reach requirement with the corresponding oxygen content of setting of resistance in this step annealing technology.But it is also noted that because of oxygen annealing also may exert an influence to the threshold voltage of device, the threshold voltage of device may depart from the threshold voltage of standard technology under this condition, and affected size is also relevant with concrete size of devices.So after adopting oxygen annealing technology, the threshold voltage value of device reality can not be known sometimes definitely, therefore can not learn that actual threshold voltage value and client are to the difference between the device threshold voltage requirement, for this reason, before being preferably in formal making device, utilize print to determine deviation between the design load of the actual threshold voltage of device and requirement of client earlier.And, reach the LDD resistance of expectation because of the adjustment that utilizes oxygen addition in the annealing process, if between the threshold voltage of device and design load deviation is arranged after the adjustment resistance, can not utilize the method that changes the oxygen addition to adjust the threshold voltage parameter again, and will adopt additive method.
For meeting the demands simultaneously aspect two parameters, can make it by following process:
At first, make a print, its device has formed lightly doped drain and grid, and the structure of device identical with customer requirement (S501) on this print; Then, this print is carried out quick thermal annealing process, and when handling again according to the corresponding relation between oxygen addition shown in Figure 3 and device LDD resistance value, adding content is worth determined oxygen (S502) by the LDD resistive arrangement of device; As, when customer requirement LDD resistance value is 4300 ohm/sq, can be earlier according to this LDD resistive arrangement value requirement, the corresponding oxygen content that need add when the LDD district being carried out thermal anneal process by relation shown in Figure 3 is definite, be 4.5sccm, the oxygen that adds this content in the thermal anneal process of then carrying out just can be produced the satisfactory device of LDD resistance value.
Follow again,, the threshold voltage value of device on this print is tested (S503) in order to determine the actual threshold voltage value of device; First, can determine to adopt this kind condition to carry out annealing in process after, whether the LDD resistance of print has reached requirement, if find not reach, needs to repeat the previous step evaluation work, redefining needs the oxygen content that adds.Second, when the LDD resistance has reached customer requirement, can judge the actual threshold voltage of print at this moment and the difference between the design load, the threshold voltage value that obtains according to this actual test (or the difference between itself and the design load) is adjusted other process conditions that have influence on device threshold voltage, to reach the threshold voltage value of design.
The factor that may have influence on device threshold voltage during technology is made mainly contains: the work function difference of the doping content of substrate, the electric charge in the gate oxide, gate oxide thickness and grid material and silicon substrate.The method of employing change substrate doping realizes the adjustment to device threshold voltage in the present embodiment, and the known substrate doping content is low more, and the threshold voltage of device is just low more.When the threshold voltage value of reality had departed from design load, the ion in the time of can forming well region by change injects or diffusion conditions changes substrate doping, reaches the purpose of adjusting device threshold voltage.Promptly can determine to form the process conditions (S504) of well region according to the difference of described threshold voltage actual value and threshold voltage designs value.As: after test obtains adding 4.5sccm oxygen and carries out thermal annealing, the threshold voltage actual value of device has dropped to 4.35v, and design load is 4.5v, be that actual value is less than design load, just can increase the energy that forms the ion injection that well region advances this moment, make the doping content of substrate become big, to improve device threshold voltage.For those of ordinary skill in the art, actual threshold voltage that can obtain according to test and the difference between the design load, be derived as easily and reach the threshold voltage designs value, the adjusted value of the ion implantation technology condition that adopts when forming well region does not repeat them here.
Then, need the oxygen content of adding and the process conditions of adjusted formation well region in the annealing process that just can utilize this print to obtain, carry out formal production and throw sheet.
During production; the ion that obtains when according to the front print being tested earlier injects or diffusion conditions; carrying out optionally to substrate, ion injects processing; to form well region (S505); in this step, utilize photoetching technique that substrate is optionally protected, only expose and to carry out the zone that ion injects; after ion injected, the place, specific region on substrate formed required well region.In addition, to inject ion and recover lattice defect in order to activate, need to carry out quick thermal annealing process one time after this step ion injects, in the present embodiment, this step thermal anneal process does not need parameter is adjusted, and can only carry out under nitrogen protection.
Then, on well region, form grid (S506).This grid is usually located at the top, middle part of well region, can be polysilicon gate, metal gates etc., and its below also comprises one deck gate oxide usually.In addition, before the technology of carrying out this step formation grid, if a plurality of devices are arranged on the substrate, need to isolate between each device, the technology that can also dig, fill out groove earlier in substrate is to realize the isolation between different components.
After forming grid, can be mask with the grid, carry out the ion implant operation once more, to form shallow doped drain (S507).
Then, according to (or adjusted) oxygen addition that previous calculations obtains, substrate is carried out quick thermal annealing process (S508) through the print test.For example, under the temperature between 600 to 1100 ℃, add the oxygen of 4.5sccm, carry out the processing between 10 seconds to 120 seconds, as 20 seconds.Through after this step thermal anneal process, not only the LDD resistance value of device can reach design load, and the threshold voltage of device also can be adjusted to design load, produces the device that two unit for electrical property parameters all can meet the demands.
In the present embodiment, by after forming shallow doped drain, adding the quick thermal annealing process of oxygen, realized adjustment to the resistance value of shallow doped drain, then again according to the difference through between this adjusted device actual threshold voltage and design load, the doping process condition that is used to form well region to the element manufacturing initial stage has been carried out corresponding adjustment, and finally produces the device that electrical property conforms to design load.In the present embodiment, only the rapid thermal anneal process condition of injection of the ion among the S505 and S508 is adjusted, just reached the device electrical performance of estimating.In other embodiments of the invention, can also regulate simultaneously other technological parameters, realize adjustment together to device parameters, as can suitably adjusting the ion implantation technology condition among the S507 simultaneously, technology adjustment in S505 and S508, the common adjustment that realizes the device electrical performance parameter.
In the present embodiment, be to utilize the oxygen addition that LDD district resistance is adjusted, adjust the threshold voltage of device with the ion implanting conditions that changes well region; In other embodiments of the invention, can also utilize the oxygen addition to adjust device threshold voltage, the ion implanting conditions when forming the LDD district with change is adjusted the LDD district resistance of device.
More than two embodiment introduced the device manufacture method of realizing different device electrical performance parameters, introduce when deviation having occurred in the technology below, inject bad this batch device that makes of control after annealing as ion by the oxygen addition of setting, when its device electrical performance parameter may depart from design load, utilize method of adjustment of the present invention, the method that the device electrical performance parameter is adjusted.
The third embodiment of the present invention is exactly to fail to satisfy the method for adjustment that is adopted when the resistance of device lightly doped drain or threshold voltage require when the device of producing in the technology manufacturing.This method generally is applied to not control well when the ion implantation technology that influences device electrical performance, and the situation of skew takes place device electrical performance.Fig. 6 is the flow chart of the device electrical performance method of adjustment of third embodiment of the invention, as shown in Figure 6, when substrate being made after have at least one device that comprises lightly doped drain and grid (S601), can test the LDD resistance of device on this substrate or the actual value of threshold voltage, whether the ion implantation technology when forming LDD district or well region with the checking front is normal, and whether formed LDD resistance or threshold voltage satisfy requirement of client.For this reason, select for use earlier a slice substrate wherein be print (or special print) routinely the oxygen addition in the technology (manufacture craft of front is just often according to oxygen addition that design load adopted) carry out quick thermal annealing process (S602), and test the actual value (S603) of its unit for electrical property parameters.If it is consistent, directly technology is carried out thermal anneal process to all substrates and is got final product routinely, if it is but inconsistent, then need be according to the corresponding relation shown in Fig. 3 and Fig. 4, required oxygen addition when determining the formal substrate annealing of producing by the difference between actual value that records and the design load is to remedy the skew that the front ion injects the not good device electrical performance that brings of control.As, when the LDD resistance actual value that records littler than design load, can increase the oxygen content that adds by the relation of LDD resistance value shown in Fig. 3 and oxygen addition, otherwise, if the actual value that records is bigger than design load, the oxygen content that can reduce to add by the relation of LDD resistance value and oxygen addition.After carrying out quick thermal annealing process by the oxygen addition of this change, design load can be approached even reach to the resistance value of the lightly doped drain of device just.With Fig. 3 situation is example, if LDD resistive arrangement value is 3500 ohm/sq, under the normal process, be to advance to realize at the oxygen that adds 2sccm, but because ion injection in front is wrong, when adding 2sccm, the resistance actual value is 2700 ohm/sq, at this moment, can suitably increase the addition of oxygen, consider actual value than design load little 800 ohm/sq, according to the oxygen addition shown in Fig. 3 and the relation of resistance value: when oxygen flow is 4.5sccm, resistance can reach 4300 ohm/sq, when oxygen flow was 2sccm, resistance can reach 3500 ohm/sq, can be similar to draw, when oxygen flow has increased 2.5sccm, resistance has increased by 800 ohm/sq, so, as long as when remaining substrate carries out quick thermal annealing process, the oxygen content that adds is changed to LDD resistance actual value that 4.5sccm can realize device approaches even equal design load, realize the adjustment of device electrical performance.The method that departing from of threshold voltage adjusted and the method for adjustment of above-mentioned LDD resistance value are similar, just oxygen addition wherein is to determine according to the relation of threshold voltage shown in Figure 4 and oxygen addition, will note the relation curve difference that device was suitable for to different size simultaneously.
At last, this substrate is carried out quick thermal annealing process (S604), can realize by the adjustment of customer requirement to device LDD resistance or threshold voltage according to the oxygen addition that draws previously.
Equally, this method of adjustment only is applicable to the LDD resistance value of device or a kind of situation about claiming in the threshold voltage, or device size is when big, the situation of making the device of Different L DD resistance value.
The third embodiment of the present invention is to utilize method of adjustment of the present invention that the LDD resistance value or the threshold voltage of device are adjusted, and injects the abnormal conditions of generation with the ion when forming LDD district or well region and remedies.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (10)
1. the manufacture method of a device comprises step:
Substrate is provided, and has a device that comprises lightly doped drain and grid on the described substrate at least;
Determine the addition of oxygen by the unit for electrical property parameters design load of device, described unit for electrical property parameters is the resistance of lightly doped drain;
The quick thermal annealing process that described substrate is added oxygen according to described addition.
2. manufacture method as claimed in claim 1 is characterized in that: the flow of described oxygen is less than 10sccm.
3. manufacture method as claimed in claim 1 is characterized in that: also add nitrogen in the described quick thermal annealing process process.
4. manufacture method as claimed in claim 3 is characterized in that: the flow-rate ratio of described nitrogen and oxygen is between 100: 1 to 8: 2.
5. manufacture method as claimed in claim 1 is characterized in that: the temperature of described quick thermal annealing process is between 600 to 1100 ℃.
6. manufacture method as claimed in claim 1 is characterized in that: the time of described quick thermal annealing process is between 10 seconds to 120 seconds.
7. the method for adjustment of a device electrical performance comprises step:
Substrate and print are provided, and have a device that comprises lightly doped drain and grid on described substrate or the print at least;
The quick thermal annealing process that described print is added oxygen;
Test the actual value of the device electrical performance parameter on the described print, described unit for electrical property parameters is the resistance of lightly doped drain;
Determine the addition of oxygen according to described device electrical performance parameter designing value and actual value;
The quick thermal annealing process that described substrate is added oxygen according to described addition.
8. method of adjustment as claimed in claim 7 is characterized in that: the flow of described oxygen is less than 10sccm.
9. method of adjustment as claimed in claim 7 is characterized in that: also add nitrogen in the described quick thermal annealing process process.
10. method of adjustment as claimed in claim 9 is characterized in that: the flow-rate ratio of described nitrogen and oxygen is between 100: 1 to 8: 2.
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| CN102445834A (en) * | 2011-09-15 | 2012-05-09 | 上海华力微电子有限公司 | Optical modeling proximity correction method of SRAM (Static Random Access Memory) grid dimension |
| CN102445835A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Optical proximity correction modeling method of SRAM source and drain dimension |
| CN103515224B (en) * | 2012-06-29 | 2016-12-21 | 无锡华润上华科技有限公司 | Polysilicon quick annealing method after ion implantation |
| CN103904138A (en) * | 2012-12-27 | 2014-07-02 | 北京汉能创昱科技有限公司 | Full back side contact crystalline silicon cell and preparation method thereof |
| CN104103502B (en) * | 2013-04-02 | 2017-02-22 | 中芯国际集成电路制造(上海)有限公司 | Formation method of transistor |
| CN105826192A (en) * | 2015-01-07 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | Method for improving resistance uniformity of annealing process of polycrystalline silicon |
| CN113394094B (en) * | 2020-03-13 | 2023-04-07 | 中芯国际集成电路制造（天津）有限公司 | Method for forming semiconductor device |
| CN111968909B (en) * | 2020-10-22 | 2021-02-09 | 晶芯成(北京)科技有限公司 | Method for manufacturing semiconductor structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6022784A (en) * | 1998-04-06 | 2000-02-08 | Motorola, Inc. | Method for manufacturing a semiconductor device |
| TW200306647A (en) * | 2002-04-23 | 2003-11-16 | Nec Electronics Corp | Method for fabricating transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6022784A (en) * | 1998-04-06 | 2000-02-08 | Motorola, Inc. | Method for manufacturing a semiconductor device |
| TW200306647A (en) * | 2002-04-23 | 2003-11-16 | Nec Electronics Corp | Method for fabricating transistor |
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| JP特开2004-363423A 2004.12.24 |
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