CN101179081A - Pixel structure - Google Patents
Pixel structure Download PDFInfo
- Publication number
- CN101179081A CN101179081A CNA2006101464494A CN200610146449A CN101179081A CN 101179081 A CN101179081 A CN 101179081A CN A2006101464494 A CNA2006101464494 A CN A2006101464494A CN 200610146449 A CN200610146449 A CN 200610146449A CN 101179081 A CN101179081 A CN 101179081A
- Authority
- CN
- China
- Prior art keywords
- layer
- channel region
- drain electrode
- disposed
- source electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a pixel architecture, which comprises a basal-plate, a scanning line, a gate insulator, a semiconductor layer, a data wire, a source cathode, a drain electrode, a protection layer and a pixel electrode. The scanning line is arranged on the basal-plate. The gate insulator covers the scanning line and the basal-plate. The semiconductor layer is arranged on the gate insulator. The data wire, the source cathode and the drain electrode are arranged on the semiconductor layer, and the source and drain electrodes are arranged on the scanning line. The source cathode is connected with the data wire. The semiconductor layer is exposed from the source cathode and the drain electrode is a channel region. The source cathode protrudes from the channel region along the long axis of the channel region. The protection layer covers upon the basal-plate, which is provided with a contact window opening with part of the drain electrode exposed. The pixel electrode is arranged on the protection layer, and is electrically connected with the drain electrode through the contact window opening. The pixel architecture has a comparative good electric quality for improvement of the contraction on the channel region edge.
Description
Technical field
The present invention is relevant for a kind of dot structure, and is particularly to the formed dot structure of a kind of use four road photomasks.
Background technology
Multimedia society improves rapidly, is indebted to the tremendous progress of semiconductor element or man-machine display device mostly.With regard to display, (Cathode Ray Tube CRT) because of having excellent display quality and its economy, monopolizes monitor market in recent years to cathode ray tube always.Yet, operate the environment of most terminating machine/display equipments on the table for the individual, or with the incision of the viewpoint of environmental protection, if predicted with the trend of saving the energy, cathode ray tube is because of still existing a lot of problems in space utilization and the energy resource consumption, and can't effectively provide solution for the demand of light, thin, short, little and low consumpting power.Therefore, have that high image quality, space utilization efficient are good, the Thin Film Transistor-LCD (TFT-LCD) of low consumpting power, advantageous characteristic such as radiationless becomes the market mainstream gradually.
In order to increase the market competitiveness, manufacturer must manage to reduce the manufacturing cost of Thin Film Transistor-LCD.Usually, the fabrication steps of dot structure (Pixel Structure) can be simplified by manufacturer, to reduce cost.Wherein can reduce cost effectively to reduce employed number of optical mask again.Existing five road photomask processing procedures and four road photomask processing procedures below will be described.
Figure 1A is the top view of existing a kind of dot structure, and Figure 1B is the profile along the hatching I-I ' of Figure 1A.Please be simultaneously with reference to Figure 1A and Figure 1B, this dot structure comprises substrate 10, scan line 12, gate insulation layer 14, semiconductor layer 16, data wire 18a, source electrode 18b, drain electrode 18c, protective layer 20 and pixel electrode 22.Wherein, scan line 12 is disposed on the substrate 10, and gate insulation layer 14 covers scan line 12.On the semiconductor layer 16 configuration gate insulation layers 14, and be positioned at scan line 12 tops.Data wire 18a is disposed on the gate insulation layer 14, and source electrode 18b is disposed on the semiconductor layer 16 with drain electrode 18c.Protective layer 20 covers scan line 12, gate insulation layer 14, semiconductor layer 16, data wire 18a, source electrode 18b and drain electrode 18c.In addition, pixel electrode 22 is disposed on the protective layer 20, and electrically connects with drain electrode 18c.Briefly, the existing dot structure of this kind is to adopt five road photomask processing procedures to form.In addition, the existing dot structure of this kind is to adopt scan line 12 to be used as grid, to increase the aperture opening ratio (Aperture Ratio) of dot structure.Because the photomask number is many more, cost also just increases relatively, so prior art proposes the formed dot structure of a kind of four road photomask processing procedures, its describe in detail as after.
Fig. 2 A is the top view of existing another kind of dot structure, and Fig. 2 B is the profile along the hatching II-II ' of Fig. 2 A.Please be simultaneously with reference to Fig. 2 A and Fig. 2 B, the dot structure of this dot structure and Figure 1A and Figure 1B is roughly the same, and therefore same member is represented with identical label.Yet different is, the figure of the semiconductor layer 16 of the dot structure of Fig. 2 A and Fig. 2 B, data wire 18a, source electrode 18b and drain electrode 18c is to define with same halftoning photomask (Half Tone Mask), so the processing procedure of dot structure need use four road photomasks altogether.In other words, semiconductor layer 16 can be distributed in data wire 18a, source electrode 18b and drain electrode 18c below.In addition, source electrode 18b is channel region 16a with the drain electrode semiconductor layer that 18c exposed 16.It should be noted that basically the edge 16a ' of channel region 16a should trim with the edge 18c ' of drain electrode 18c.In other words, the phenomenon of indent should be unable to appear in the edge of channel region 16a.
Yet, more specifically, because photoresistance is subjected to uneven optical exposure or baking, so the phenomenon that contracts in edge 16a ' the meeting appearance, just edge 16a ' can't trim with edge 18c '.In other words, the edge 16a ' of channel region 16a and edge 16a " will produce asymmetric situation, so the existing dot structure of this kind has electrical problems such as the higher or leakage current of leakage current is inhomogeneous.
Summary of the invention
The purpose of this invention is to provide a kind of dot structure, to improve the higher or uneven phenomenon of firing current (Ion) of leakage current.
Another object of the present invention provides a kind of dot structure, and it has preferable electrical quality.
For reaching above-mentioned or other purposes, the present invention proposes a kind of dot structure.This dot structure comprises substrate, scan line, gate insulation layer, semiconductor layer, data wire, source electrode, drain electrode, protective layer and pixel electrode.Scan line is disposed on the substrate.Gate insulation layer covers scan line and substrate.Semiconductor layer is disposed on the gate insulation layer.Data wire is disposed on the semiconductor layer.Source electrode and drain configuration and are positioned at scan line top on semiconductor layer, and source electrode is connected with data wire.Source electrode is a channel region with the semiconductor layer that drain electrode is exposed, and wherein source electrode protrudes in channel region along the long axis direction of channel region.Protective layer cover data line, source electrode, drain electrode, semiconductor layer and gate insulation layer, and protective layer has contact window (contact opening), and it exposes the part drain electrode.Pixel electrode is disposed on the protective layer, and electrically connects via contact window and drain electrode.
For reaching above-mentioned or other purposes, the present invention reintroduces a kind of dot structure.This dot structure comprises substrate, scan line, gate insulation layer, semiconductor layer, data wire, source electrode, drain electrode, protective layer and pixel electrode.Scan line is disposed on the substrate.Gate insulation layer covers scan line and substrate.Semiconductor layer is disposed on the gate insulation layer.Data wire is disposed on the semiconductor layer.Source electrode and drain configuration and are positioned at scan line top on semiconductor layer.Source electrode is connected with data wire, and source electrode and the semiconductor layer that exposed of drain electrode are channel region.Wherein source electrode is protruding in channel region along the short-axis direction of channel region.Protective layer cover data line, source electrode, drain electrode, semiconductor layer and gate insulation layer.Protective layer has contact window, and it exposes the part drain electrode.Pixel electrode is disposed on the protective layer, and electrically connects via contact window and drain electrode.
In one embodiment of this invention, above-mentioned channel region for example is a rectangle.
In one embodiment of this invention, the edge of the edge of above-mentioned channel region and drain electrode trims.
In one embodiment of this invention, above-mentioned data wire, source electrode, drain electrode and semiconductor layer are to utilize a halftoning photomask (half tone mask), a slit photomask (slit mask) or a multiple-level stack formula photomask (stacked layers mask) to define.
In one embodiment of this invention, above-mentioned halftoning photomask comprises a transparency carrier, a light transmittance adjustment layer (transmittance modulation layer) and a light shield layer, wherein light transmittance adjustment layer is disposed on the transparency carrier, and light transmittance adjustment layer has at least one opening, and the position of opening is corresponding to the position of channel region.Light shield layer is disposed at light transmittance and adjusts on the layer, and the pattern of light shield layer is corresponding to the pattern of data wire, source electrode and drain electrode.
Based on above-mentioned, (source electrode protrudes in channel region along the long axis direction of channel region because the present invention adopts special source electrode pattern in four road photomask processing procedures, or protruding in channel region along the short-axis direction of channel region), so the phenomenon that contracts in the channel region edge can be improved, to reduce leakage current.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. is described in detail below.
Description of drawings
Figure 1A is the top view of existing a kind of dot structure.
Figure 1B is the profile along the hatching I-I ' of Figure 1A.
Fig. 2 A is the top view of existing another kind of dot structure.
Fig. 2 B is the profile along the hatching II-II ' of Fig. 2 A.
Fig. 3 A to Fig. 3 C looks schematic diagram on the manufacturing process of dot structure of first embodiment of the invention.
Fig. 4 A to Fig. 4 C is respectively the profile along the hatching III-III ' of Fig. 3 A to Fig. 3 C.
Fig. 5 is the vertical view of the halftoning photomask of Fig. 3 A.
Fig. 6 A is the top view of the dot structure of second embodiment of the invention.
Fig. 6 B is the profile along the hatching IV-IV ' of Fig. 6 A.
Embodiment
The general dot structure processing procedure of four road photomasks that uses is to use a halftoning photomask, with while definition of data line, source electrode, drain electrode and semiconductor layer.Wherein source electrode is a channel region with the semiconductor layer that drain electrode is exposed.Yet, in these existing four road photomask processing procedures, the problem that the edge of channel region contracts in can producing, so the present invention proposes a kind of special source electrode pattern, the phenomenon that contracts in producing with the edge that improves channel region in four road photomask processing procedures.More specifically, the present invention protrudes in channel region with source electrode along the long axis direction of channel region, or protruding in channel region along the short-axis direction of channel region, the phenomenon that contracts in producing with the edge that improves channel region.
Below, with first embodiment dot structure of the present invention and manufacture method thereof are described earlier, with second embodiment another kind of dot structure of the present invention is described again.
[first embodiment]
Fig. 3 A to Fig. 3 C looks schematic diagram on the manufacturing process of dot structure of first embodiment of the invention.Fig. 4 A to Fig. 4 C is respectively the profile along the hatching III-III ' of Fig. 3 A to Fig. 3 C.Please be simultaneously with reference to Fig. 3 A and Fig. 4 A, one pixel structure process method of the present invention is that substrate 100 is provided earlier.Then, on substrate 100, form scan line 102 and gate insulation layer 104 in regular turn.Wherein gate insulation layer 104 covers scan line 102.Afterwards, on substrate 100, form layer of semiconductor material layer 106 and one deck conductor layer 108 in regular turn.In the present embodiment, after forming semiconductor material layer 106, also be included in the semiconductor material layer 106 and mix and formation one deck ohmic contact material layer 107.Then, provide a halftoning photomask 200, and utilize halftoning photomask 200 on conductor layer 108, to form one deck patterning photoresist layer R, and patterning photoresist layer R has two or more film thickness distribution.
Fig. 5 is the vertical view of the halftoning photomask of Fig. 3 A.Please refer to Fig. 3 A and Fig. 5, more specifically, halftoning photomask 200 comprises a transparency carrier 210, light transmittance adjustment layer 220 and one light shield layer 230, wherein light transmittance adjustment layer 220 is disposed on the transparency carrier 210, and light shield layer 230 is disposed on the light transmittance adjustment layer 220, and the pattern of light shield layer 230 is corresponding to the pattern of data wire 108a, source electrode 108b and drain electrode 108c.In the present embodiment, in order to improve the exposure quality of channel region 106b, light transmittance adjustment layer 220 has at least one opening 220a, and the position of opening 220a is corresponding to the position of channel region 106b.Therefore, the light transmittance in opening 220a zone is greater than other regional light transmittances.Though opening 220a is positioned at the central authorities of channel region 106b, yet that the shape of opening 220a, position and quantity are not limited to present embodiment is described.In addition, slit photomask, multiple-level stack formula photomask or other photomasks with two kinds of light transmittances also can be used for replacing halftoning photomask 200.
Then, please be simultaneously with reference to Fig. 3 B and Fig. 4 B, R is a mask with the patterning photoresist layer, removes segment conductor layer 108, ohmic contact material layer 107 and semiconductor material layer 106, to form semiconductor layer 106a, ohmic contact layer 107a, data wire 108a, source electrode 108b and drain electrode 108c simultaneously.Wherein data wire 108a is disposed on the semiconductor layer 106a.Source electrode 108b and drain electrode 108c are disposed on the semiconductor layer 106a, and are positioned at scan line 102 tops, and wherein source electrode 108b is connected with data wire 108a.In addition, the method that removes above-mentioned each layer of part for example is the dry-etching processing procedure.Source electrode 108b and the drain electrode semiconductor layer 106a that 108c exposed are channel region 106b.Subsequently, remove patterning photoresist layer R.
Then, please form layer protective layer (PassivationLayer) 110 in substrate 100 tops simultaneously with reference to Fig. 3 C and Fig. 4 C.Protective layer 110 has contact window (Contact Opening) 110a, exposes drain electrode 108c.Afterwards, on protective layer 110, form pixel electrode 112.Pixel electrode 112 can electrically connect via contact window 110a and drain electrode 108c.
More specifically, in the present embodiment, the channel region 106b shown in Fig. 3 C is a rectangle, and source electrode 108b that is to say that along major axis (Length) the direction L extension of channel region 106b source electrode 108b extends along scan line 102.In other words, the edge 108b ' of source electrode 108b protrudes in the edge 106b ' of channel region 106b.For example, it is parallel that the bearing of trend of source electrode 108b and scan line 102 bearing of trends do not limit, and both also can have angle.In addition, because source electrode 108b extends in addition to edge 106b ', therefore when the pattern of definition semiconductor layer 106a and source electrode 108b, the edge 106b ' of channel region 106b is than the problem that contracts in difficult the generation.
More specifically, because the special pattern of source electrode 108b can change the characteristic of x-ray diffraction, therefore above-mentioned patterning photoresist layer R is difficult for producing exposure or toasting uneven phenomenon, guarantees that just edge 106b ' and the edge 108c ' of drain electrode 108c can trim.In other words, the edge 106b of channel region 106b " with edge 106b ' will be symmetrical.Thus, the shape of channel region 106b can conform to default shape, to reduce phenomenons such as the higher or leakage current of leakage current is inhomogeneous.
Below utilize second embodiment that the another kind of dot structure of the present invention is described, this dot structure also can improve the problem that contracts in the channel region edge.
[second embodiment]
Fig. 6 A is the top view of the dot structure of second embodiment of the invention, and Fig. 6 B is the profile along the hatching IV-IV ' of Fig. 6 A.In a second embodiment, the member identical with first embodiment quoted identical label, and the repetitive description thereof will be omitted content, and only just describes with the different part of first embodiment.
Please be simultaneously with reference to Fig. 6 A and Fig. 6 B, in the present embodiment, channel region 106b shown in Fig. 6 A is a rectangle, and source electrode 108b is protruding in channel region 106b along the short-axis direction W of channel region 106b, and just the bearing of trend of source electrode 108b is vertical with the bearing of trend of scan line 102.Yet the bearing of trend of the source electrode 108b of present embodiment and the bearing of trend of scan line 102 also can have angle.
Because source electrode 108b is protruding in channel region 106b, therefore the patterning photoresist layer in order to definition semiconductor layer 106a and source electrode 108b is difficult for producing exposure or toasting uneven phenomenon, guarantees that just edge 106b ' and the edge 108c ' of drain electrode 108c can trim.In other words, the both sides of channel region 106b will be comparatively symmetry, to improve electrical problems such as the higher or leakage current of leakage current is inhomogeneous.
Similarly, as the foregoing description, in order to improve the exposure quality of channel region 106b, also can have at least one opening in order to the light transmittance adjustment layer of definition source electrode 108b and the halftoning photomask of drain electrode 108c, and the position of opening is corresponding to the position (similar shown in Figure 5) of channel region.
In sum, the present invention protrudes in channel region with source electrode along the long axis direction of channel region, or it is protruding in channel region along the short-axis direction of channel region, therefore the patterning photoresist layer in order to definition semiconductor layer and source electrode is difficult for producing exposure or toasting uneven phenomenon, to improve the anisopleural phenomenon of channel region.In other words, the phenomenon that the edge of channel region contracts in being difficult for producing is to improve electrical problems such as the higher or leakage current of leakage current is inhomogeneous.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those of ordinary skills, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when with being as the criterion that claim was defined.
Claims (10)
1. dot structure comprises:
One substrate;
The one scan line is disposed on this substrate;
One gate insulation layer covers this scan line and this substrate;
Semi-conductor layer is disposed on this gate insulation layer;
One data wire is disposed on this semiconductor layer;
An one source pole and a drain electrode, be disposed on this semiconductor layer, and be positioned at this scan line top, and this source electrode is connected with this data wire, and this semiconductor layer that this source electrode and this drain electrode are exposed is a channel region, and wherein this source electrode protrudes in this channel region along the long axis direction of this channel region;
One protective layer covers this data wire, this source electrode, this drain electrode, this semiconductor layer and this gate insulation layer, and this protective layer has a contact window, and it exposes this drain electrode of part; And
One pixel electrode is disposed on this protective layer, and electrically connects via this contact window and this drain electrode.
2. dot structure as claimed in claim 1 is characterized in that, this channel region is a rectangle.
3. dot structure as claimed in claim 1 is characterized in that, the edge of this channel region and the edge of this drain electrode trim.
4. dot structure as claimed in claim 1 is characterized in that, this data wire, this source electrode, this drain electrode and this semiconductor layer are to utilize a halftoning photomask, a slit photomask or a multiple-level stack formula photomask to define.
5. dot structure as claimed in claim 4 is characterized in that, this halftoning photomask comprises:
One transparency carrier;
One light transmittance is adjusted layer, be disposed on this transparency carrier, and this light transmittance adjustment layer has at least one opening, and the position of this opening is corresponding to the position of this channel region; And
One light shield layer is disposed at this light transmittance and adjusts on the layer, and the pattern of this light shield layer is corresponding to the pattern of this data wire, this source electrode and this drain electrode.
6. dot structure comprises:
One substrate;
The one scan line is disposed on this substrate;
One gate insulation layer covers this scan line and this substrate;
Semi-conductor layer is disposed on this gate insulation layer;
One data wire is disposed on this semiconductor layer;
An one source pole and a drain electrode, be disposed on this semiconductor layer, and be positioned at this scan line top, and this source electrode is connected with this data wire, and this semiconductor layer that this source electrode and this drain electrode are exposed is a channel region, and wherein this source electrode is protruding in this channel region along the short-axis direction of this channel region;
One protective layer covers this data wire, this source electrode, this drain electrode, this semiconductor layer and this gate insulation layer, and this protective layer has a contact window, and it exposes this drain electrode of part; And
One pixel electrode is disposed on this protective layer, and electrically connects via this contact window and this drain electrode.
7. dot structure as claimed in claim 6 is characterized in that, this channel region is a rectangle.
8. dot structure as claimed in claim 6 is characterized in that, the edge of this channel region and the edge of this drain electrode trim.
9. dot structure as claimed in claim 6 is characterized in that, this data wire, this source electrode, this drain electrode and this semiconductor layer are to utilize a halftoning photomask, a slit photomask or a multiple-level stack formula photomask to define.
10. dot structure as claimed in claim 9 is characterized in that, and this halftoning photomask comprises:
One transparency carrier;
One light transmittance is adjusted layer, be disposed on this transparency carrier, and this light transmittance adjustment layer has at least one opening, and the position of this opening is corresponding to the position of this channel region; And
One light shield layer is disposed at this light transmittance and adjusts on the layer, and wherein the pattern of this light shield layer is corresponding to the pattern of this data wire, this source electrode and this drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101464494A CN100483723C (en) | 2006-11-06 | 2006-11-06 | Pixel structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101464494A CN100483723C (en) | 2006-11-06 | 2006-11-06 | Pixel structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101179081A true CN101179081A (en) | 2008-05-14 |
| CN100483723C CN100483723C (en) | 2009-04-29 |
Family
ID=39405251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101464494A Expired - Fee Related CN100483723C (en) | 2006-11-06 | 2006-11-06 | Pixel structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100483723C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016008182A1 (en) * | 2014-07-18 | 2016-01-21 | 深圳市华星光电技术有限公司 | Mask, array substrate manufacturing method, and array substrate |
| CN111968993A (en) * | 2020-02-06 | 2020-11-20 | 友达光电股份有限公司 | Active element substrate and manufacturing method thereof |
-
2006
- 2006-11-06 CN CNB2006101464494A patent/CN100483723C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016008182A1 (en) * | 2014-07-18 | 2016-01-21 | 深圳市华星光电技术有限公司 | Mask, array substrate manufacturing method, and array substrate |
| US9842865B2 (en) | 2014-07-18 | 2017-12-12 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Mask plate, method of manufacturing array substrate, and array substrate |
| CN111968993A (en) * | 2020-02-06 | 2020-11-20 | 友达光电股份有限公司 | Active element substrate and manufacturing method thereof |
| CN111968993B (en) * | 2020-02-06 | 2023-04-28 | 友达光电股份有限公司 | Active element substrate and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100483723C (en) | 2009-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107256872B (en) | A kind of array substrate and preparation method thereof, display panel, display device | |
| CN105159001B (en) | Array substrate and its manufacturing method, display panel and display device | |
| CN100385328C (en) | Liquid crystal display device and producing method thereof | |
| US9709864B2 (en) | Array substrate and its manufacturing method and display device | |
| CN102655156B (en) | Array substrate and manufacturing method thereof | |
| CN106292103A (en) | A kind of array base palte and preparation method thereof, display floater, display device | |
| CN106847836B (en) | TFT substrate and preparation method thereof | |
| CN108695394A (en) | Thin film transistor (TFT), preparation method, array substrate and display device | |
| CN103034049A (en) | Method for manufacturing metal wire and array substrate | |
| CN101833204A (en) | Array substrate as well as manufacturing method and liquid crystal display panel thereof | |
| CN104808408B (en) | A kind of production method of COA substrates, display device and COA substrates | |
| CN1619396A (en) | Liquid crystal display, thin film diode panel, and manufacturing method of the same | |
| CN110335872A (en) | A kind of array substrate and preparation method thereof | |
| CN105448935A (en) | Array base plate and preparing method thereof, display device | |
| CN103424925B (en) | A kind of array base palte and manufacture method, display device | |
| CN103560114B (en) | A kind of tft array substrate and its manufacture method, display device | |
| CN100447628C (en) | Manufacturing method for chromatic filter layer | |
| CN104298018B (en) | Array base palte and preparation method thereof, display panel | |
| CN104638016A (en) | Thin film transistor and manufacturing method of thin film transistor, array substrate and manufacturing method of array substrate, and display device | |
| CN100483723C (en) | Pixel structure | |
| CN114709345A (en) | Display panel and display device | |
| CN102683341A (en) | TFT (Thin Film Transistor) array substrate and manufacturing method thereof as well as liquid crystal display | |
| CN107958910A (en) | Active switch array base palte and its manufacture method | |
| CN1862789B (en) | Film transistor array panel including multi-layered thin films, and method of manufacturing the panel | |
| CN104062843A (en) | Mask plate, manufacturing method for array substrate and array substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090429 Termination date: 20191106 |