CN101174663A - Lighting apparatus - Google Patents

Lighting apparatus Download PDF

Info

Publication number
CN101174663A
CN101174663A CNA2007101651207A CN200710165120A CN101174663A CN 101174663 A CN101174663 A CN 101174663A CN A2007101651207 A CNA2007101651207 A CN A2007101651207A CN 200710165120 A CN200710165120 A CN 200710165120A CN 101174663 A CN101174663 A CN 101174663A
Authority
CN
China
Prior art keywords
light
fluorophor
yellow
emitting
orange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2007101651207A
Other languages
Chinese (zh)
Other versions
CN100539224C (en
Inventor
川岛淨子
林田裕美子
岩本正己
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Lighting and Technology Corp
Original Assignee
Toshiba Lighting and Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Lighting and Technology Corp filed Critical Toshiba Lighting and Technology Corp
Publication of CN101174663A publication Critical patent/CN101174663A/en
Application granted granted Critical
Publication of CN100539224C publication Critical patent/CN100539224C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Led Device Packages (AREA)

Abstract

The invention provides a luminous device which improves the luminous efficiency, has a high color rendering and can adjust the Ra. The luminous device of the invention has a LED chip (2) of a blue lamination type serving as a luminous unit. In the LED chip (2), fluophor-containing resin layers (9) which are mixed and spread in a transparent resin are used to cover two or more fluophors of the fluophors of the yellow color system and the fluophors of the orange color system, wherein, the main luminous wave of the fluophors of the yellow color system ranges from 540 to 585nm and the half breadth ranges from 70 to 110nm, while the main luminous wave of the fluophors of the orange color system is more than 585nm but less than 630nm and the half breadth ranges from 70 to 110nm.

Description

Light-emitting device
Technical field
The invention relates to light-emitting devices such as LED light lamp.
Background technology
The technology of LED lamp of using light-emitting diode (LED:Light Emitting Diode) is just towards multi-direction develop rapidly, for example backlight of LCD, mobile phone, information terminal etc. and indoor and outdoor advertisement etc.And the useful life of LED lamp is long, reliability is higher, and have low in energy consumption, impact resistance is strong, response speed is fast, demonstration colorimetric purity height, advantage such as frivolous, short and small, not only can be used for the industry purposes, and also receive much attention when being used for general lighting.When such LED lamp was used for various uses, key was to obtain white luminous.
To realize white luminous representation mode, can enumerate following three kinds as the LED lamp: (1) uses the mode of 3 kinds of led chips sending indigo plant, green and red each coloured light; (2) make up the mode of sending the led chip of blue light and sending the fluorophor of Yellow-to-orange light; (3) the combination mode sending the led chip of ultraviolet and send three mixture of colours fluorophor (below be called the RGB fluorophor) of blueness, green and red light.Wherein, generally speaking, mode (2) has obtained extensive practicability.
Structure as the LED lamp of using described mode (2), following structure has been proposed: in the cup-shaped framework (frame) that the transparent resin that is mixed with fluorophor is flow into be equipped with led chip, make its curing, thereby form the resin bed (for example, opening the 2001-148516 communique) that contains fluorophor with reference to the Japan Patent spy.And in order to improve brightness, (promptly, on a large amount of led chips that are equipped on the substrate (board), coating is mixed with the transparent resin of fluorophor, thereby forms the resin bed that contains fluorophor for Chip On Board, COB) structure also to have developed chip on board.In addition, also proposed following technology: the transparent resin that will be mixed with fluorophor is configured as sheet (sheet) shape and forms the resin sheet that contains fluorophor, this resin sheet that contains fluorophor is fixed on the framework that is disposing led chip, thus the aberration between minimizing color inequality and cup.
In recent years, with regard to the LED lamp that is used for general lighting, the color that is known as color rendering presents and comes into one's own.Color rendering is meant, will be near the illumination of natural daylight as standard light, and the color under the light source irradiation presented assess, color rendering is represented with color rendering index.Color rendering index, it is the size of representing the color shift that produced when respectively the test color of JIS defined being thrown light on numerical value with sample light source and standard light, color rendering index in the time of will observing under standard light is made as 100, along with color shift becomes big, numerical value can diminish, and is good more near 100 color renderings more.
Color rendering index has average color rendering index Ra and special colour rendering index Ri, and average color rendering index Ra represents to test the mean value of the color rendering index values of No.1~No.8.And, among the special colour rendering index Ri, use be each numerical value of color rendering index of test No.i.
Becoming the White LED of present main flow, is the mode of the luminous fluorophor of luminous led chip of employing combined blue and Yellow-to-orange, and among the LED of this mode, so red composition deficiency is the color rendering deficiency.Therefore, except the luminous fluorophor of Yellow-to-orange, also allocate nitride based or sulfide-based etc. red light-emitting phosphor, improve color rendering thus.
That is, in the LED lamp of the so-called high colour developing type that Ra is higher, (for example be by the red light of coming in the luminous sodium yellow that yellow fluorophor sent by blue light, mixing to send by red-emitting phosphors from led chip, dominant wavelength is 620nm), thus the white light of synthetic excellent color reproducing performance.
But, in the LED lamp of such height colour developing type, it is that the blue light of 460nm excites being used to that red-emitting phosphors not only absorbs wavelength from led chip, excites being used to but also absorb the sodium yellow that sent by yellow fluorophor, the problem that therefore has the taking-up efficient of light significantly to reduce.
Therefore, at described problem, a kind of LED lamp (for example, opening the 2004-327518 communique with reference to the Japan Patent spy) that uses that green-emitting phosphor and red-emitting phosphors (perhaps fluorescent orange body) are mixed has in the lump been proposed.And, also proposed to select the method (for example, opening the 2005-322674 communique) of the dominant wavelength of red-emitting phosphors with reference to the Japan Patent spy.Generally speaking red area is 670nm usually more than or equal to 600nm, but can broadly select the zone of dominant wavelength till the 780nm.
Yet, with regard to the Japan Patent spy opens the LED lamp that is disclosed in the 2004-327518 communique, because in most cases the green light of being sent by green-emitting phosphor also is used as exciting light, so can't fully improve luminous efficiency and Ra.
And, open in the LED lamp that the 2005-322674 communique disclosed the Japan Patent spy, if will consider to reduce the reduction of luminous efficiency and improve Ra, then must strictly select dominant wavelength.And, Ca 2Sr 5N 8: Eu, CaAlSiN 3: nitride based red-emitting phosphors such as Eu is difficult to carry out crystalline growth, and with regard to other nitride based red-emitting phosphors, because can reducing efficient, particle diameter produces considerable influence, therefore except must from the wave-length coverage of broad, selecting best wavelength, also must strictly set the fluorophor particle diameter.If the particle diameter of fluorophor is less, then not only can't improve luminous efficiency, and from the blue-light-emitting of led chip with blue excitation thus and luminous yellow is that luminous light path all can be blocked, reduce thereby cause light to take out efficient.
As the LED lamp that is used for general lighting, require to be worth as index, and the reduction of luminous efficiency is less and can realize the light-emitting device of Ra80~85 with the Ra (80~85) of 3 wavelength fluorescent lamps.
Summary of the invention
The object of the present invention is to provide a kind of raising that realizes luminous efficiency, have high-color rendering and can adjust the light-emitting device of Ra.
The light-emitting device of 1 invention of claim the of the present invention is characterised in that and comprises: light-emitting component; And the resin bed that contains fluorophor that disposes in the mode that covers described light-emitting component, this resin bed that contains fluorophor contains transparent resin and two or more fluorophor, and described two or more fluorophor is subjected to the exciting of light of being radiated by described light-emitting component and sends the visible light that half breadth is 70~110nm.
And, as 1 described light-emitting device of invention of claim the of the present invention, the light-emitting device of 2 inventions of claim the of the present invention is characterised in that: described light-emitting component has the light-emitting diode chip for backlight unit that sends blue light, and the yellow that described fluorophor has two or more is a fluorophor, and average color rendering index Ra is 80~85, and described two or more yellow is that fluorophor is subjected to the exciting of blue light of being radiated by described light-emitting diode chip for backlight unit and sends half breadth is that the sodium yellow of 70~110nm is to orange-colored light.
And, as 1 described light-emitting device of invention of claim the of the present invention, the light-emitting device of 3 inventions of claim the of the present invention is characterised in that: described light-emitting component has the light-emitting diode chip for backlight unit that sends blue light, it is fluorophor that described fluorophor has two kinds of yellow, described two kinds of yellow be fluorophor be subjected to the exciting of blue light of radiating by described light-emitting diode chip for backlight unit and send dominant wavelength be 520~585nm and half breadth be the yellow-green light of 70~110nm to orange-colored light, and the difference of described two kinds of yellow dominant wavelength that is fluorophor is 25~65nm.
And, as 1 described light-emitting device of invention of claim the of the present invention, the light-emitting device of 4 inventions of claim the of the present invention is characterised in that: described light-emitting component has the light-emitting diode chip for backlight unit that sends blue light, and it is fluorophor and Yellow Red fluorophor that described fluorophor has yellow, and average color rendering index Ra is 80~85, described yellow be fluorophor be subjected to the exciting of blue light of radiating by described light-emitting diode chip for backlight unit and send dominant wavelength be 540~585nm and half breadth be the sodium yellow of 70~110nm to orange-colored light, described Yellow Red fluorophor is subjected to the exciting of blue light of being radiated by described light-emitting diode chip for backlight unit and sends that dominant wavelength surpasses 585nm but be that the orange-colored light of 70~110nm is to orange-red light smaller or equal to 630nm and half breadth.
And, as 1 described light-emitting device of invention of claim the of the present invention, the light-emitting device of 5 inventions of claim the of the present invention is characterised in that: described light-emitting component has the light-emitting diode chip for backlight unit that sends blue light, and the yellow that described fluorophor has two or more is fluorophor and Yellow Red fluorophor, described two or more yellow be fluorophor be subjected to the exciting of blue light of radiating by described light-emitting diode chip for backlight unit and send dominant wavelength be 540~585nm and half breadth be the sodium yellow of 70~110nm to orange-colored light, described Yellow Red fluorophor is subjected to the exciting of blue light of being radiated by described light-emitting diode chip for backlight unit and sends that dominant wavelength surpasses 585nm but be that the orange-colored light of 70~110nm is to orange-red light smaller or equal to 630nm and half breadth.
And, as the described light-emitting device of arbitrary invention in 5 inventions of 1 invention to the of claim the of the present invention, the light-emitting device of 6 inventions of claim the of the present invention is characterised in that: described light-emitting component has the wire-bonded joint construction, described fluorophor is with respect to the allotment ratio of described transparent resin, aggregate value with two or more fluorophor is calculated, be 10~20wt%, and the described thickness (optical path length) that contains the resin bed of fluorophor is 0.3~1.2mm.
And, as the described light-emitting device of arbitrary invention in 5 inventions of 1 invention to the of claim the of the present invention, the light-emitting device of 7 inventions of claim the of the present invention is characterised in that: described light-emitting component has the flip-chip joint construction, described fluorophor is with respect to the allotment ratio of described transparent resin, aggregate value with two or more fluorophor is calculated, be 10~20wt%, and the described thickness (optical path length) that contains the resin bed of fluorophor is 0.15~1.2mm.
In 7 inventions of 1 invention to the of described claim the, short of specifying, then the definition of term and art-recognized meanings are as follows.
Light-emitting component is meant and utilizes the light that radiates to come excited fluophor, makes fluorophor send the element of visible light.Employed light-emitting component among the present invention for example can be enumerated the led chip of blue-light-emitting type or the led chip of ultra-violet light-emitting type etc.But, be not limited in these types, so long as can excited fluophor and make its light-emitting component that sends visible light, then can use various light-emitting components according to the purposes of light-emitting device or the illuminant colour of target etc.
Fluorophor is meant, is subjected to the exciting of light (for example, blue light) of being radiated by described light-emitting component and sends visible light, and can obtain the material of required illuminant colour by this visible light and the colour mixture of the light that is radiated by light-emitting component.
Fluorophor among the present invention is that two or more is had half breadth in the dominant wavelength is that the fluorophor of the luminescent spectrum of 70~110nm mixes and uses.Half breadth is meant, highly is 1/2 o'clock spectrum widening (wavelength) of crest.If used the fluorophor of the luminescent spectrum of the not enough 70nm of half breadth with dominant wavelength, also can't obtain the luminous of high-color rendering even if then mix two or more fluorophor.And, have the fluorophor that half breadth surpasses the luminescent spectrum of 110nm if use, then be difficult to realize high-luminous-efficiency.
In addition, in the present invention, having put down in writing and having sent dominant wavelength is that sodium yellow to the fluorophor of orange-colored light of 540~585nm is a fluorophor as yellow, put down in writing send that dominant wavelength surpasses 585nm but smaller or equal to the orange-colored light of 630nm to the fluorophor of orange-red light as the Yellow Red fluorophor, but, specify fluorophor if put down in writing luminous dominant wavelength especially, it is in the fluorophor that the green light of then sending dominant wavelength and be 520~540nm to the fluorophor of yellow-green light is also contained in yellow sometimes.
The resin bed that contains fluorophor is the layer that is used for keeping fluorophor, is that the mixture by will being mixed with described two or more fluorophor in transparent resin is coated with and is solidified to form in the mode of covering luminous element.As transparent resin, for example can use aqueous transparent resins such as epoxy resin or silicones.In order to improve luminous efficiency, be preferably, fluorophor is with respect to the allotment ratio of transparent resin, aggregate value with two or more fluorophor is calculated, be 10~20wt%, and the thickness that is equivalent to the resin bed that contains fluorophor of optical path length when the electrode of light-emitting component connects the employing wire-bonded, is 0.3~1.2mm.And, when light-emitting component has the flip-chip electrode-connecting structure, being preferably, the thickness (optical path length) that contains the resin bed of fluorophor is 0.15~1.2mm.
Average color rendering index Ra is meant, the size of the color shift when representing to come test color thrown light on sample light source and standard light with numerical value.Ra more than or equal to 80 and the general lighting device that is equivalent to 3 wavelength fluorescent lamps have very high color rendering.
[effect of invention]
The described light-emitting device of 1 of claim the invention according to the present invention sends two or more the fluorophor that half breadth is the visible light of 70~110nm owing to have, and therefore can reduce the reduction of luminous efficiency and can obtain the luminous of high-color rendering.And, also can easily carry out the adjustment of Ra value by the illuminant colour (dominant wavelength) that changes fluorophor.
2 described light-emitting devices of invention of claim the according to the present invention, to send half breadth be that sodium yellow to two or more yellow of orange-colored light of 70~110nm is a fluorophor owing to having led chip and being used to the blue light of led chip since then, therefore can keep high-luminous-efficiency, and can realize that Ra is 80~85 high-color rendering.
3 described light-emitting devices of invention of claim the according to the present invention, to send dominant wavelength be that 520~585nm and half breadth are that yellow-green light to two kinds of yellow of orange-colored light of 70~110nm are fluorophor owing to having led chip and being used to the blue light of led chip since then, and the difference of the dominant wavelength that described two kinds of yellow are fluorophor is 25~65nm, therefore high-color rendering can be kept, and luminous efficiency can be improved.
4 described light-emitting devices of invention of claim the according to the present invention, owing to have led chip, being used to the blue light of led chip since then, to send dominant wavelength be that 540~585nm and half breadth are that sodium yellow to the yellow of orange-colored light of 70~110nm is fluorophor and sends that dominant wavelength surpasses 585nm but be the Yellow Red fluorophor of the orange-colored light of 70~110nm to orange-red light smaller or equal to 630nm and half breadth, therefore can keep high-luminous-efficiency, and can realize that Ra is 80~85 high-color rendering.
5 described light-emitting devices of invention of claim the according to the present invention, owing to have led chip, being used to the blue light of led chip since then, to send dominant wavelength be that 540~585nm and half breadth are that sodium yellow to two or more the yellow of orange-colored light of 70~110nm is fluorophor and sends that dominant wavelength surpasses 585nm but be the Yellow Red fluorophor of the orange-colored light of 70~110nm to orange-red light smaller or equal to 630nm and half breadth, therefore high-luminous-efficiency can be kept, and high-color rendering can be realized.
6 described light-emitting devices of invention of claim the according to the present invention, by fluorophor is made as 10~20wt% with respect to the allotment ratio of transparent resin, and the thickness (optical path length) that will contain the resin bed of fluorophor is adjusted into 0.3~1.2mm, thereby can further improve the luminous efficiency that is connecting the light-emitting device of light-emitting component in the mode of wire-bonded.
7 described light-emitting devices of invention of claim the according to the present invention, by fluorophor is made as 10~20wt% with respect to the allotment ratio of transparent resin, and the thickness (optical path length) that will contain the resin bed of fluorophor is adjusted into 0.15~1.2mm, thereby can further improve the luminous efficiency that is connecting the light-emitting device of light-emitting component in the mode of flip-chip.
Description of drawings
Fig. 1 is the sectional view of structure that expression is applied to light-emitting device of the present invention the 1st example of LED lamp.
Fig. 2 is the plane graph of an example of the expression LED assembly that disposing a plurality of LED lamps shown in Figure 1.
Fig. 3 is the sectional view of the A-A line of Fig. 2.
Fig. 4 is the sectional view of the LED lamp in the 2nd example of light-emitting device of the present invention.
Fig. 5 is the plane graph of the light-emitting device in the 3rd example of light-emitting device of the present invention.
Fig. 6 is the sectional view of the F-F line of Fig. 5.
Fig. 7 is the chart of measurement result of the luminous efficiency of the LED lamp of expression in the reference example 1~5.
1:LED lamp 2:LED chip
3: circuit pattern 4: substrate
6: wiring 7: recess
8: framework 9: the resin bed that contains fluorophor
10: solder bump 21:LED assembly
Embodiment
Below, with reference to diagram, example of the present invention is described.
(the 1st example)
Fig. 1 is the sectional view of structure that expression is applied to light-emitting device of the present invention the 1st example of LED lamp.And Fig. 2 is the plane graph of an example of for example representing on a plane a plurality of LED lamps shown in Figure 1 to be configured to the rectangular LED assembly (module) of 3 row, 3 row, and Fig. 3 is the A-A line sectional view of Fig. 2.
In the LED lamp 1 shown in Figure 1, the led chip 2 with blue-light-emitting type is as light-emitting component.This led chip 2 carries on the substrate 4 with circuit pattern 3.As substrate 4, use be the flat board that forms by aluminium (Al) or nickel (Ni), glass epoxy resin etc. with thermal diffusivity and rigidity, on this substrate 4, be formed with the circuit pattern 3 of cathode side and anode-side across electric insulation layer 5.Circuit pattern 3 is to be made of the alloy of Cu and Ni or Au etc.
And the bottom-side electrodes of led chip 2 is electrically connected on the circuit pattern 3 of one of them electrode side, and overlying electrode then electrically connects via the circuit pattern 3 of closing lines such as gold thread 6 with another electrode side.
The framework of being made by resin etc. 8 with recess 7 is being set on substrate 4.Framework 8 for example is by polybutylene terephthalate (PBT) (polybutylene terephthalate, PBT), polyphthalamide (polyphthalamide, PPA), (polycarbonate, PC) synthetic resin that waits constitutes Merlon, and is disposing led chip 2 in recess 7.
And, in the recess 7 of taking in led chip 2, filling the resin that contains fluorophor, this resin that contains fluorophor is that the half breadth that will send dominant wavelength is that two or more fluorophor of the visible light of 70~110nm mixes to be distributed in the transparent resin and forms, and led chip 2 is covered by such resin bed that contains fluorophor 9.As transparent resin, for example can use silicones or epoxy resin etc.The resin bed 9 that contains fluorophor forms in the following manner, that is: in transparent resin, add. after the mixing phosphor, use distributor etc. that this resin that contains fluorophor is filled in the recess 7 that is disposing led chip 2, and heat and make the described hardening of resin that contains fluorophor.
In order to improve luminous efficiency, be preferably, fluorophor calculates with the aggregate value of two or more fluorophor with respect to the allotment ratio of transparent resin, is 10~20wt%.Be more preferably 13~15wt%.And, shown in this example, in the structure (wire-bonded joint construction) that led chip 2 is connected with circuit pattern 3 via closing line 6, the thickness that is equivalent to the resin bed that contains fluorophor 9 of optical path length is 0.3~1.2mm, is more preferably 0.5~0.9mm.If contain the not enough 0.3mm of thickness of the resin bed 9 of fluorophor, the quantitative change that then is used for luminous fluorophor is few, therefore can cause luminous efficiency to reduce.And the resin bed 9 that contains fluorophor is difficult to fully cover till the upper end of closing line 6, thereby closing line 6 is exposed, and is therefore not good.On the other hand, surpass 1.2mm if contain the thickness of the resin bed 9 of fluorophor, then the light that is radiated by led chip 2 is difficult to arrive till the top of the resin bed 9 that contains fluorophor, and is difficult to fully excite all fluorophor in the resin bed 9 that contains fluorophor, thereby is difficult to obtain required light quantity.In addition, suppress the reduction of luminous efficiency in order to ensure fluorophor necessary and fully amount, in most cases, the degree of depth of recess 7 (distance till from the openend of recess 7 to the bottom surface) is normally about 1.0mm, at this moment, the thickness that contains the resin bed 9 of fluorophor is restricted to the degree of depth smaller or equal to recess 7.
As fluorophor, use be to be subjected to the exciting of blue light of radiating from led chip 2 and the half breadth that sends dominant wavelength is two or more fluorophor of the visible light of 70~110nm.When use has half breadth when exceeding the wide luminous crest of described scope or having the fluorophor of too precipitous luminous crest, can't obtain the luminous of high efficiency and high-color rendering.That is, when use has the fluorophor of luminescent spectrum of the not enough 70nm of half breadth of dominant wavelength,, also can't obtain the luminous of high-color rendering even if mix two or more fluorophor.And, when use has half breadth when surpassing the fluorophor of luminescent spectrum of 110nm, be difficult to realize high-luminous-efficiency.In addition, a kind of when sending half breadth and being the fluorophor of visible light of 70~110nm when only using, because color rendering reduces, therefore also be difficult to obtain the luminous of high efficiency and high-color rendering.
In the LED of the 1st example lamp 1, by the yellow of using two or more is fluorophor, the sodium yellow that its half breadth that is subjected to sending from the exciting of blue light of led chip 2 dominant wavelength is 70~110nm can realize that to the light between the orange-colored light average color rendering index Ra is 80~85 high-color rendering.
And, by using two kinds of yellow is fluorophor, and it sends dominant wavelength is that the difference of 520~585nm and dominant wavelength is 25~65nm, and the half breadth of dominant wavelength is that the yellow-green light of 70~110nm is to the light between the orange-colored light, high-luminous-efficiency can be kept, and high-color rendering can be realized.
In addition, by combination and use that to send dominant wavelength be that 540~585nm and half breadth are that sodium yellow to the yellow of the light between the orange-colored light of 70~110nm is fluorophor and sends that dominant wavelength surpasses 585nm but be the Yellow Red fluorophor of the orange-colored light of 70~110nm to the light between the orange-red light smaller or equal to 630nm and half breadth, can realize that then Ra is 80~85 high-color rendering.Dominant wavelength is that the yellow of 540~585nm is that fluorophor and dominant wavelength surpass 585nm but smaller or equal to the allotment ratio of the Yellow Red fluorophor of 630nm, can change 3.5: 1~2.0: 1 scope in, allocates ratio by adjusting this, can adjust Ra and colour temperature.
In addition, also capable of being combined and to use described two or more yellow be that (dominant wavelength is 540~585nm to fluorophor, half breadth be 70~110nm) and described a kind of Yellow Red fluorophor (dominant wavelength surpasses 585nm but smaller or equal to 630nm, half breadth is 70~110nm).
During when using dominant wavelength to surpass 585nm but smaller or equal to the Yellow Red fluorophor of 630nm, can further make up and use and send the fluorophor that dominant wavelength is the orange-red light of 600~630nm.In addition, can be that 510~540nm and half breadth are the green-emitting phosphor of the green light of 70~110nm to the light between the yellow-green light also with sending dominant wavelength, with described yellow be that fluorophor or Yellow Red fluorophor or the two are combined and use.
As sending dominant wavelength is that 540~585nm and half breadth are that sodium yellow to the yellow of orange-colored light of 70~110nm is a fluorophor and to send dominant wavelength be the Yellow Red fluorophor of the orange-colored light of 70~110nm to orange-red light greater than 585nm but smaller or equal to 630nm and half breadth, can enumerate AE 2SiO 4: Eu fluorophor (AE represents alkali earths elements such as Sr, Ba, Ca) or Mg 2SiO 4: Eu fluorophor, Zn 2SiO 4: the silicate of Eu fluorophor etc. is fluorophor, can select from these fluorophor.And, can be fluorophor (for example, AE also from silicon aluminum oxygen nitrogen x(Si, Al) 12(N, O) 16: Eu) or in the oxide based fluorophor, the fluorophor of selecting to have described dominant wavelength and half breadth uses.And, be that 520~585nm and half breadth are that yellow-green light to the yellow of orange-colored light of 70~110nm is a fluorophor as sending dominant wavelength, also can be from described AE 2SiO 4: Eu fluorophor, Mg 2SiO 4: Eu fluorophor, silicate are that fluorophor, silicon aluminum oxygen nitrogen are in fluorophor, the oxide based fluorophor, and the fluorophor of selecting to have described dominant wavelength and half breadth uses.
Dominant wavelength surpasses 630nm and half breadth is the red-emitting phosphors of the red light of 70~110nm as sending, and can enumerate CaAlSiN 3: Eu fluorophor, Sr 2Si 5N 8: the nitride phosphor of Eu fluorophor and so on, can from these fluorophor, select and use.
In the LED lamp 1 of the 1st example, the electric flux that is applied converts dominant wavelength to by led chip 2 and for example is the blue light of 460nm and radiation, and to have half breadth be that two or more fluorophor of the luminous crest of 70~110nm converts the longer light of wavelength to the blue light that is radiated by contained in the resin bed 9 that contains fluorophor.Then, emit white light from LED lamp 1 based on the color of the illuminant colour of blue light that radiates by led chip 2 and described fluorophor.
And, in the LED of the 1st example lamp 1, send two or more fluorophor that half breadth is the visible light of 70~110nm owing to having the exciting of blue light that is subjected to radiating, therefore can obtain efficient and reduce the luminous of less and high-color rendering by led chip 2.And, by making up and using the different fluorophor of dominant wavelength, can easily adjust the value of Ra, and can realize that Ra is 80~85 high-color rendering as two or more fluorophor.
In addition, LED lamp 1 is not limited in white light-emitting lamp, also can constitute the LED lamp 1 with white illuminant colour in addition.When utilizing LED lamp 1 to obtain luminous beyond the white, when for example obtaining Neutral colour luminous, can suitably use various fluorophor according to the illuminant colour of target.And, in this example, be to lift the SMD type LED lamp 1 of flattened type, but particularly be not limited in this for example is illustrated, for example also go for bullet cut (perhaps round) LED lamp.And, be illustrated a plurality of LED lamps 1 are configured to rectangular light-emitting diode component 21, but the present invention is not limited to this, for example a plurality of LED lamps 1 can be formed 1 row shape respectively, also 1 LED lamp can be set severally in addition.
(the 2nd example)
Fig. 4 is the sectional view of LED modulated structure of the 2nd example of expression light-emitting device of the present invention.In addition, among Fig. 4, for the identical inscape of Fig. 1 of expression the 1st example, used identical reference number, and omitted repeat specification.
In the 2nd example, connect by flip-chip with being connected of the electrode of led chip 2 and to carry out.That is, led chip 2, with electrode forming surface down the mode of (face down) carry on substrate 4, electronic pads electrically connects with circuit pattern 3 by solder projection (bump) 10.
And, in the recess 7 of taking in led chip 2, filling the resin that contains fluorophor, this resin that contains fluorophor is that the half breadth that will send spectrum is that two or more fluorophor of the visible light of 70~110nm mixes to be distributed in the transparent resin and forms, and led chip 2 is covered by such resin bed that contains fluorophor 9.As fluorophor, can suitably make up and use with the 1st example in identical yellow be fluorophor and Yellow Red fluorophor.
In order to improve luminous efficiency, be preferably, fluorophor calculates with the aggregate value of two or more fluorophor with respect to the allotment ratio of transparent resin, is 10~20wt%, is more preferably 13~15wt%.And the thickness (optical path length) that contains the resin bed 9 of fluorophor is 0.15~1.2mm, is more preferably 0.5~0.9mm.If contain the not enough 0.15mm of thickness of the resin bed 9 of fluorophor, the quantitative change that then is used for luminous fluorophor is few, therefore can cause luminous efficiency to reduce.On the other hand, surpass 1.2mm if contain the thickness of the resin bed 9 of fluorophor, then the light that radiates of led chip 2 can be difficult to arrive till the top of the resin bed 9 that contains fluorophor, and is difficult to fully excite all fluorophor in the resin bed 9 that contains fluorophor, thereby is difficult to obtain required light quantity.
In the LED of the 2nd example lamp 1, therefore send two or more fluorophor that half breadth is the visible light of 70~110nm owing to having the exciting of blue light that is subjected to radiating, can obtain the luminous of the less and high-color rendering of the reduction of efficient by led chip 2.And, be used as two or more fluorophor by combination and the different fluorophor of use dominant wavelength, can easily adjust the value of Ra, and can realize that Ra is 80~85 high-color rendering.In addition, owing to be to use the flip-chip joint construction to be used as the electrode-connecting structure of led chip 2, so can improve the taking-up efficient of the light that above led chip 2, sends.
(the 3rd example)
Fig. 5 and Fig. 6 represent the light-emitting device of the formation LED encapsulation of the present invention's the 3rd example.Fig. 5 is the plane graph of this light-emitting device, and Fig. 6 is the sectional view that light-emitting device shown in Figure 5 is blocked along the F-F line.In addition, in Fig. 5 and Fig. 6,, used identical reference number to represent for the graphic identical inscape relevant with the 1st example.
Fig. 5 and light-emitting device (LED lamp) 1 shown in Figure 6 possess: base plate for packaging, for example, device substrate 4; Reflector 31; Circuit pattern 3; A plurality ofly be preferably a large amount of led chips, for example, semiconductor light-emitting elements 2; Tack coat 32; Reflector 34; The resin bed 9 that contains fluorophor; And the diffusing portion of light Expansion material 33.The resin bed 9 that contains fluorophor is also brought into play function as containment member.
Device substrate 4 is by metal or insulation material, for example plasticly dull and stereotyped constitutes, and in order to obtain the required light-emitting area of light-emitting device 1, device substrate 4 forms for example oblong-shaped of regulation shape.When by synthetic resin producing device substrate 4, for example can utilize the epoxy resin that has added glass powder to wait and form.When coming producing device substrate 4 by metal, can improve from the thermal diffusivity of the inner face of this device substrate 4 heat radiation, can make the temperature of each several part of device substrate 4 even, inhomogeneous with the illuminant colour of the semiconductor light-emitting elements 2 of the light that suppresses to send identical wavelength domain.In addition, as metal material with described action effect, the material of can illustration 10W/mK above excellent thermal conductivity, particularly, can the illustration aluminum or aluminum alloy.
The size in reflector 31 is, can set the semiconductor light-emitting elements 2 of specified quantity, and for example, reflector 31 covers the whole surface of device substrate 4.Reflector 31 can be made of the white insulating material that has the reflectivity more than 85% in the wavelength region may of 400~740nm.White insulating material like this can use the prepreg (pre-preg) that is made of bonding sheet.Such prepreg for example can form by the thermosetting resin that is mixed with white powders such as aluminium oxide being contained be dipped in the flat substrates.Reflector 31 utilizes the caking property of self and is bonded on the one side that becomes device substrate 4 surfaces.
Circuit pattern 3 is bonded on the face of opposition side of the face that is bonded with device substrate 4 in reflector 31, with as the key element to each semiconductor light-emitting elements 2 energising.This circuit pattern 3 for example is for each semiconductor light-emitting elements 2 is connected in series, and on the length direction in device substrate 4 and reflector 31, scatters every the interval of regulation and forms two row.Be positioned at a distolateral distolateral circuit pattern 3a of the row of a circuit pattern 3, be connected with power supply drafting department 3c one and form, same, be positioned at a distolateral distolateral circuit pattern 3a of the row of another circuit pattern 3, be connected with the drafting department 3d one of powering and form.
Power supply drafting department 3c, 3d are arranged on an end of the length direction in reflector 31 side by side, and are spaced from each other and are insulated by reflector 31.On described respectively power drafting department 3c, 3d, wait by welding respectively connecting the electric wire (not shown) that arrives power supply.
Circuit pattern 3 is the order formation according to the following stated.At first, will be attached on the device substrate 4, on reflector 31, attach the Copper Foil onesize afterwards with reflector 31 by containing the reflector 31 that the prepreg that is soaked with unhardened described thermosetting resin constitutes.Then, the duplexer that is obtained by above step is heated and pressurize, thermosetting resin is hardened, thus device substrate 4 and Copper Foil are pressed on the reflector 31, thus the bonding of finishing.Then, the photoresist layer is set on Copper Foil, Copper Foil is carried out etch processes, remove residual photoresistor agent layer afterwards, to form circuit pattern 3.The thickness of the circuit pattern 3 that is made of Copper Foil for example is 35 μ m.
Each semiconductor light-emitting elements 2 for example be that two-wire (double wire) the type led chip that forms by using nitride-based semiconductor constitutes, and stacked semiconductor light emitting layer 2a forms on the one side of the device substrate 2b with light transmission.Device substrate 2b is for example made by sapphire substrate.The thickness of this device substrate 2b for example is 90 μ m greater than the thickness of circuit pattern 3.
Semiconductor light emitting layer 2a stacks gradually resilient coating, n type semiconductor layer, luminescent layer, p type coating layer, p type semiconductor layer and forms on the interarea of device substrate 2b.Luminescent layer is to be made as barrier layer and the alternately laminated quantum well structure that forms of trap (well) layer.On the n type semiconductor layer, be provided with the n lateral electrode, on the p type semiconductor layer, be provided with the p lateral electrode.This semiconductor light emitting layer 2a does not have reflectance coating, can be to the both direction radiating light of thickness direction.
As shown in Figure 6, each semiconductor light-emitting elements 2 is configured in respectively between the circuit pattern 3 of the length direction that is adjacent to device substrate 4, and is bonded in by tack coat 32 on the same one side of white reflecting layer 31.Particularly, the parallel another side of one side with the device substrate 2b of stacked semiconductor light emitting layer 2a is bonded on the reflector 31 by tack coat 32.By this bonding, circuit pattern 3 and semiconductor light-emitting elements 2 be linearly to be arranged on the same one side in reflector 31, side and the circuit pattern 3 that therefore is positioned at the semiconductor light-emitting elements 2 of this orientation be arranged to close to each other and relative to.
The thickness of tack coat 32 for example can be made as 5 μ m or below the 5 μ m.Tack coat 32 for example can use has the binding agent of light transmittance more than or equal to 70% light transmission under 5 μ m or the thickness below the 5 μ m, for example can use silicones preferably is binding agent.
As Fig. 5 and shown in Figure 6, the electrode of each semiconductor light-emitting elements 2 with closely connect the circuit pattern 3 that is configured in semiconductor light-emitting elements 2 both sides and utilize closing line 6 to be connected.In addition, another the distolateral distolateral circuit pattern 3b that is positioned at described two column circuits patterns 3 also utilizes closing line 6 to connect each other.Therefore, under the situation of this example, each semiconductor light-emitting elements 2 is being connected in series.
By above device substrate 4, reflector 31, circuit pattern 3, each semiconductor light-emitting elements 2, tack coat 32 and closing line 6, formed the face light emitting source of light-emitting device 1.
Reflector 34, it is not corresponding respectively single or a plurality of semiconductor light-emitting elements 2 and being provided with, but the solid memder of all semiconductor light-emitting elements 2 on the encirclement reflector 31, as shown in Figure 5, reflector 34 is to be formed by rectangular frame, and semiconductor light-emitting elements 2 is configured in the recess 7 that is formed by described frame.Reflector 34 is bonded and fixed on the reflector 31, and a plurality of semiconductor light-emitting elements 2 and circuit pattern 3 have been taken in its inside, and described a pair of power supply drafting department 3c, 3d are positioned at the outside of reflector 34.
Reflector 34 for example can utilize synthetic resin to be shaped, and inner circumferential surface becomes reflecting surface.The reflecting surface of reflector 34 except the metal material of high reflectance that can be by plating or evaporating Al or Ni etc. forms, also can form by the high whitewash of reflectivity of coating visible light.Perhaps, also white powder can be blended in the moulding material of reflector 34, thereby make reflector 34 self become the high white object of reflectivity of visible light.As described white powder, can use white inserts such as aluminium oxide, titanium oxide, magnesium oxide, barium sulfate.In addition, comparatively ideal is that the reflecting surface of reflector 34 is to form towards the unlimited gradually mode of the direction of illumination of light-emitting device 1.
The resin bed 9 that contains fluorophor, identical with described the 1st example, be to constitute by the resin that contains fluorophor, this resin that contains fluorophor is that the half breadth that will send a luminous crest wavelength is that two or more fluorophor of the visible light of 70~110nm mixes to be distributed in the transparent resin and forms, fill the aqueous resin that contains fluorophor, so that this resin spreads all over and 31 surfaces, landfill reflector, each semiconductor light-emitting elements 2 that is straight line arrangement and closing line 6 etc., this resin is solidified in reflector 34, form the described resin bed that contains fluorophor thus.Flow into the aqueous transparent resin between surface, reflector 31 and the closing line 6, owing to capillarity etc. flows on each semiconductor light-emitting elements 2 and the closing line 6, its thickness etc. are roughly even, and fluorophor also roughly is evenly dispersed in the transparent resin.In addition, the viscosity that is used to form the aqueous transparent resin of the resin bed 9 that contains fluorophor gets final product more than or equal to 1PaS and smaller or equal to 3PaS, and described aqueous transparent resin also can be to be made of two or more aqueous transparent resin.
And in the resin bed 9 that contains fluorophor, fluorophor calculates with the aggregate value of two or more fluorophor with respect to the allotment ratio of transparent resin, is 10~20wt%.And the thickness that is equivalent to the resin bed that contains fluorophor 9 of optical path length is 0.3~1.2mm.
In the 3rd example that constitutes in the above described manner, can keep high-luminous-efficiency, and can realize that Ra is 80~85 high-color rendering, and can adjust Ra by the dominant wavelength of selecting fluorophor.In addition, the reflection from reflector 31 is arranged also, so luminous efficiency is improved.
[embodiment]
Below, embodiments of the invention and comparative example are described.
Embodiment 1~6, comparative example 1~4
Prepare following various fluorophor respectively, that is, 3 kinds of yellow that have table 1 indicating value by the dominant wavelength and the half breadth of blue led chip light emitting are fluorophor (silicate is that fluorophor Y1, Y3 and YAG are fluorophor Y2), 3 kinds of fluorescent orange bodies (silicate is fluorophor O1, O2, O3) and a kind of red-emitting phosphors (nitride based fluorophor R).In addition, the not classification of the particle diameter of these fluorophor is till the upper limit to the 45 μ m.
[table 1]
Dominant wavelength (nm) Half breadth (nm)
Yellow is a fluorophor Silicate is Y1 540 85
YAG is Y2 565 130
Silicate is Y3 570 100
The Yellow Red fluorophor Silicate is O1 585 70
Silicate is O2 615 70
Silicate is O3 615 100
The red colour system fluorophor Nitride based R 650 100
Then, in embodiment 1~6,, make up and use in the mode shown in the table 2, and in comparative example 1~4, use a kind of described fluorophor, make LED lamp 1 respectively with structure shown in Figure 1 with in these fluorophor two or more.
That is (fluorophor is with respect to the allotment ratio of silicones, and wt%) mixing is distributed in the silicones according to the allotment ratio shown in the table 2 with each fluorophor.Then, use separator, the silicones that contains fluorophor that is obtained is filled into disposes that to send wavelength be that the degree of depth of led chip 2 of the blue light of 460nm is that 1.0mm, opening are directly in the cup (recess 7) for 3mm, making the silicones sclerosis afterwards, is the LED lamp 1 of 1.0mm with the thickness (optical path length) of making the resin 9 that contains fluorophor.
Then, make the LED lamp 1 that is obtained in embodiment 1~6 and the comparative example 1~4 luminous respectively, use moment spectroscope MCPD-7000 (big tomb electronics (thigh) corporate system) to measure luminescent spectrum.Then, according to luminescent spectrum, calculate colour temperature and color rendering index (average color rendering index Ra and special colour rendering index R9, R15) respectively.And, use direction finding (Gonio) method to measure luminous efficiency.These measurement results are shown in table 2.In addition, luminous efficiency is meant the relative value that the efficient of the LED lamp of comparative example 3 is made as at 100% o'clock.
[table 2]
Embodiment 1 embodiment 2 embodiment 3 embodiment 4 embodiment 5 embodiment 6 Fluorophor The characteristics of luminescence
Kind Dominant wavelength (nm) Half breadth (nm) Allotment ratio (wt%) Colour temperature Tc (K) Ra R9 R15 Efficient is than (%)
Silicate is Y1 540 85 4.0 5000 5000 5000 72 80 80 -12 10 9 66 84 85 100 90 85
Silicate is O1 585 70 7.0
Silicate is Y1 540 85 4.0
Silicate is O1 585 70 3.0
Silicate is O2 615 70 3.0
Silicate is Y1 540 85 8.0
Silicate is O3 615 100 3.0
Silicate is Y1 540 85 3.5 4000 3000 3000 80 7 5 80 8 -2 85 84 70 90 90 90 80
Silicate is O1 585 70 2.5
Nitride based R 650 100 3.0
Silicate is Y1 540 85 4.0
Silicate is O1 585 70 3.0
Silicate is O2 615 70 3.0
Nitride based R 650 100 0.2
Silicate is Y1 540 85 4.5
Silicate is O1 585 70 3.5
Silicate is O2 615 70 3.0
Nitride based R 650 100 0.5
Comparative example 1 YAG is Y2 565 130 7.0 3000 60 -45 48 70
Comparative example 2 Silicate is O1 585 70 10.0 2800 39 -138 27 80
Comparative example 3 Silicate is Y3 570 100 7.0 5000 60 -84 42 100
Comparative example 4 Silicate is Y1 540 85 5.0 (20000 ) 60 -140 18
According to table 2 as can be known, in the LED lamp 1 that is obtained among the embodiment 1~6, what use is to comprise that sending half breadth is that sodium yellow to the yellow of orange-colored light of 70~110nm is a fluorophor and to send half breadth be the fluorophor of the orange-colored light of 70~110nm to the Yellow Red fluorophor of blood orange coloured light this two or more, therefore, high-luminous-efficiency can be kept, and color rendering can be improved.Particularly, in the LED lamp 1 of embodiment 2~4 and embodiment 6, can obtain Ra and be the high-color rendering more than 80 or 80.
With the luminous dominant wavelength in the reference example 1~5 is that 565nm and half breadth are that the yellow of 95nm is fluorophor (silicate is fluorophor), with the mixed of 10 weight %, be distributed in the silicones.Then, use separator, the silicones that contains fluorophor that is obtained is filled into disposing that to send wavelength be that the degree of depth of led chip 2 of the blue light of 460nm is that 1.0mm, opening are directly in the cup (recess 7) for 3mm, make the silicones sclerosis afterwards, to make the LED lamp 1 of thickness (optical path length) severally with the resin that contains fluorophor shown in the table 3.
Then, make the LED lamp 1 that is obtained in the reference example 1~5 luminous respectively, the utilization direction finding method is measured luminous efficiency.Measurement result such as table 3 and shown in Figure 7.In addition, luminous efficiency is meant the relative value that the thickness (optical path length) that will contain the resin of fluorophor was made as for the efficient of the LED lamp in the reference example 4 of 0.7mm at 100% o'clock.
[table 3]
The resin layer thickness (mm) that contains fluorophor Luminous efficiency is than (%)
Reference example 1 0.2 60.0
Reference example 2 0.35 99.8
Reference example 3 0.5 99.9
Reference example 4 0.7 100.0
Reference example 5 0.9 99.9
According to the chart among table 3 and Fig. 7 as can be known, electrode connection at led chip 2 is to adopt in the LED lamp 1 of wire-bonded, in the reference example 2~5 of thickness more than or equal to 0.3mm of the resin bed 9 that contains fluorophor, can obtain high-luminous-efficiency, in the reference example 1 of the not enough 0.3mm of the thickness of the resin bed 9 that contains fluorophor, luminous efficiency declines to a great extent.
This reference example is the measurement result at the LED lamp 1 that to use half breadth to be in a kind of yellow in 70~110nm scope be fluorophor, but also can obtain same result when the use half breadth is two or more the fluorophor of 70~110nm.

Claims (7)

1. light-emitting device is characterized in that comprising:
Light-emitting component; And
The resin bed that contains fluorophor that disposes in the mode that covers described light-emitting component, this resin bed that contains fluorophor contains transparent resin and two or more fluorophor, and described two or more fluorophor is subjected to the exciting of light of being radiated by described light-emitting component and sends the visible light that half breadth is 70~110nm.
2. light-emitting device as claimed in claim 1 is characterized in that:
Described light-emitting component has the light-emitting diode chip for backlight unit that sends blue light, and it is fluorophor that described fluorophor has two or more yellow, and average color rendering index Ra is 80~85, and described two or more yellow is that fluorophor is subjected to the exciting of blue light of being radiated by described light-emitting diode chip for backlight unit and sends half breadth is that the sodium yellow of 70~110nm is to orange-colored light.
3. light-emitting device as claimed in claim 1 is characterized in that:
Described light-emitting component has the light-emitting diode chip for backlight unit that sends blue light, it is fluorophor that described fluorophor has two kinds of yellow, described two kinds of yellow be fluorophor be subjected to the exciting of blue light of radiating by described light-emitting diode chip for backlight unit and send dominant wavelength be 520~585nm and half breadth be the yellow-green light of 70~110nm to orange-colored light, and the difference of described two kinds of yellow dominant wavelength that is fluorophor is 25~65nm.
4. light-emitting device as claimed in claim 1 is characterized in that:
Described light-emitting component has the light-emitting diode chip for backlight unit that sends blue light, and it is fluorophor and Yellow Red fluorophor that described fluorophor has yellow, and average color rendering index Ra is 80~85, described yellow be fluorophor be subjected to the exciting of blue light of radiating by described light-emitting diode chip for backlight unit and send dominant wavelength be 540~585nm and half breadth be the sodium yellow of 70~110nm to orange-colored light, described Yellow Red fluorophor is subjected to the exciting of blue light of being radiated by described light-emitting diode chip for backlight unit and sends that dominant wavelength surpasses 585nm but be that the orange-colored light of 70~110nm is to orange-red light smaller or equal to 630nm and half breadth.
5. light-emitting device as claimed in claim 1 is characterized in that:
Described light-emitting component has the light-emitting diode chip for backlight unit that sends blue light, and it is fluorophor and Yellow Red fluorophor that described fluorophor has two or more yellow, described two or more yellow be fluorophor be subjected to the exciting of blue light of radiating by described light-emitting diode chip for backlight unit and send dominant wavelength be 540~585nm and half breadth be the sodium yellow of 70~110nm to orange-colored light, described Yellow Red fluorophor is subjected to the exciting of blue light of being radiated by described light-emitting diode chip for backlight unit and sends that dominant wavelength surpasses 585nm but be that the orange-colored light of 70~110nm is to orange-red light smaller or equal to 630nm and half breadth.
6. as the described light-emitting device of arbitrary claim in the claim 1 to 5, it is characterized in that:
Described light-emitting component has the wire-bonded joint construction, described fluorophor is with respect to the allotment ratio of described transparent resin, aggregate value with two or more fluorophor is calculated, and is 10~20wt%, and the described thickness (optical path length) that contains the resin bed of fluorophor is 0.3~1.2mm.
7. as the described light-emitting device of arbitrary claim in the claim 1 to 5, it is characterized in that:
Described light-emitting component has the flip-chip joint construction, described fluorophor is with respect to the allotment ratio of described transparent resin, aggregate value with two or more fluorophor is calculated, and is 10~20wt%, and the described thickness (optical path length) that contains the resin bed of fluorophor is 0.15~1.2mm.
CNB2007101651207A 2006-10-31 2007-10-29 Light-emitting device Expired - Fee Related CN100539224C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006296801 2006-10-31
JP2006296801 2006-10-31

Publications (2)

Publication Number Publication Date
CN101174663A true CN101174663A (en) 2008-05-07
CN100539224C CN100539224C (en) 2009-09-09

Family

ID=39423016

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2007101651207A Expired - Fee Related CN100539224C (en) 2006-10-31 2007-10-29 Light-emitting device

Country Status (1)

Country Link
CN (1) CN100539224C (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102013226A (en) * 2010-11-02 2011-04-13 亿光电子(中国)有限公司 Byte displayer
CN102097571A (en) * 2010-11-16 2011-06-15 深圳市瑞丰光电子股份有限公司 Yellow/green light diode, backlight, mobile phone and illumination indicating device
CN102384405A (en) * 2010-08-27 2012-03-21 罗姆股份有限公司 LED light source unit for backlight of liquid crystal display, and liquid crystal display
CN102024883B (en) * 2009-09-10 2012-07-25 陈一璋 Preparation method of light-emitting diode radiating substrate
CN103208583A (en) * 2013-04-12 2013-07-17 天津理工大学 Warm white light-emitting diode (LED) plane light source luminous body and manufacturing method thereof
CN105322070A (en) * 2014-07-10 2016-02-10 江苏稳润光电有限公司 High-brightness yellow LAMP light-emitting diode packaging technology
CN105659396A (en) * 2013-10-18 2016-06-08 夏普株式会社 Light-emitting device
CN105655327A (en) * 2016-03-16 2016-06-08 广东华辉煌光电科技有限公司 Structure substrate of COB light source modules with flip LED chips
CN107180907A (en) * 2017-06-12 2017-09-19 陕西科技大学 A kind of clean room true yellow light LED and preparation method thereof
CN110969959A (en) * 2018-09-28 2020-04-07 深圳光峰科技股份有限公司 LED display screen

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102024883B (en) * 2009-09-10 2012-07-25 陈一璋 Preparation method of light-emitting diode radiating substrate
US9510442B2 (en) 2010-08-27 2016-11-29 Rohm Co., Ltd. LED light source unit for backlight of liquid crystal display, and liquid crystal display
CN102384405A (en) * 2010-08-27 2012-03-21 罗姆股份有限公司 LED light source unit for backlight of liquid crystal display, and liquid crystal display
CN102384405B (en) * 2010-08-27 2015-01-14 罗姆股份有限公司 LED light source unit for backlight of liquid crystal display, and liquid crystal display
CN102013226A (en) * 2010-11-02 2011-04-13 亿光电子(中国)有限公司 Byte displayer
CN102097571A (en) * 2010-11-16 2011-06-15 深圳市瑞丰光电子股份有限公司 Yellow/green light diode, backlight, mobile phone and illumination indicating device
CN103208583A (en) * 2013-04-12 2013-07-17 天津理工大学 Warm white light-emitting diode (LED) plane light source luminous body and manufacturing method thereof
CN105659396A (en) * 2013-10-18 2016-06-08 夏普株式会社 Light-emitting device
CN105322070A (en) * 2014-07-10 2016-02-10 江苏稳润光电有限公司 High-brightness yellow LAMP light-emitting diode packaging technology
CN105655327A (en) * 2016-03-16 2016-06-08 广东华辉煌光电科技有限公司 Structure substrate of COB light source modules with flip LED chips
CN107180907A (en) * 2017-06-12 2017-09-19 陕西科技大学 A kind of clean room true yellow light LED and preparation method thereof
CN107180907B (en) * 2017-06-12 2019-05-10 陕西科技大学 A kind of clean room true yellow light LED light and preparation method thereof
CN110969959A (en) * 2018-09-28 2020-04-07 深圳光峰科技股份有限公司 LED display screen

Also Published As

Publication number Publication date
CN100539224C (en) 2009-09-09

Similar Documents

Publication Publication Date Title
CN100539224C (en) Light-emitting device
US9647181B2 (en) Light emitting device with phosphors
CN100578781C (en) Light-emitting device
CN103199178B (en) Semiconductor light-emitting apparatus and the manufacture method of semiconductor light-emitting apparatus
KR101235489B1 (en) Light-emitting device
JP4337574B2 (en) LIGHT EMITTING DEVICE AND METHOD FOR FORMING THE SAME
CN102299246B (en) Light-Emitting Device
JP5181505B2 (en) Light emitting device
TW201133953A (en) Saturated yellow phosphor converted LED and blue converted red LED
JP5082427B2 (en) Light emitting device
JP2008218486A (en) Light emitting device
JP2006332269A (en) Light emitting device
JP2008270781A (en) Light-emitting device
JP5194675B2 (en) Light emitting device
CN110098303A (en) Light emitting device
JP2007116117A (en) Light emitting device
JP2009111273A (en) Light-emitting device
JP4534717B2 (en) Light emitting device
JP2008218998A (en) Light emitting device
JP2007288138A (en) Light emitting device
JP6405738B2 (en) Light emitting device
JP2007116116A (en) Light emitting device
JP2008244468A (en) Light-emitting device
JP2008235552A (en) Method of manufacturing light-emitting apparatus and light-emitting apparatus
CN114830361A (en) Light emitting device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090909

Termination date: 20181029

CF01 Termination of patent right due to non-payment of annual fee