CN101168474A - Method for manufacturing polycrystalline silicon thin film at low temperature - Google Patents
Method for manufacturing polycrystalline silicon thin film at low temperature Download PDFInfo
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- CN101168474A CN101168474A CNA2006100633476A CN200610063347A CN101168474A CN 101168474 A CN101168474 A CN 101168474A CN A2006100633476 A CNA2006100633476 A CN A2006100633476A CN 200610063347 A CN200610063347 A CN 200610063347A CN 101168474 A CN101168474 A CN 101168474A
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Abstract
The invention relates to process for preparing a low-temperature polysilicon membrane, which comprises the steps as follows: a. a substrate is provided and a non-crystalline silicon film is formed on the substrate, b. a quasi-molecular laser is provided to emit a light bar pulse laser beam to radiate the non-crystalline silicon film to form a radiation area in fusion state, c. the quasi-molecular laser moves some, to radiate the light bar pulse laser beam on the non-crystalline silicon film to form another radiation area, while the two radiation areas form a space area, d. the step c is repeated to form a plurality of radiation areas and a plurality of space areas on the non-crystalline silicon film. The invention can save radiation time, enlarge the crystal grain of low-temperature polysilicon membrane, and improve the electron mobility of low-temperature polysilicon membrane.
Description
Technical field
The present invention relates to a kind of method for manufacturing polycrystalline silicon thin film at low temperature.
Background technology
The thermal stability of general glass substrate often can only arrive 600 ℃, if directly at high temperature make polysilicon membrane, will cause the glass torsional deformation, therefore, industrial community and academia all are devoted to development and make low-temperature polysilicon film (Low TemperaturePolysilicon Thin Film).
Quasi-molecule laser annealing (Excimer Laser Annealing, ELA) method is at present a kind of method of making low-temperature polysilicon film that is widely used in, it is to utilize high-octane excimer laser irradiation amorphous silicon membrane, make amorphous silicon membrane absorb laser energy, and make this amorphous silicon membrane be melting state, recrystallize into low-temperature polysilicon film after cooling.This method is to adopt the column pulse laser of excimer laser producer, scanning forms an irradiation area up and down on amorphous silicon membrane, after having scanned up and down, this column pulse laser moves forward a distance, make a plurality of irradiation areas of formation overlapped, and the area of lap is greater than more than 90% of each irradiation area area, because the more underlapped portion temperature height of lap temperature, heterogeneous nucleation takes place in the interface in lap and underlapped part, transverse temperature gradient by lap and other underlapped part generation, nucleus will along the higher direction of temperature promptly never lap to the direction of lap grow up, and finally crystallize into the part low-temperature polysilicon film.
Yet the low-temperature polysilicon film that aforesaid method forms because the excimer laser producer need move around up and down, has increased the time of irradiation greatly, causes production efficiency to reduce.And the formed grain-size of this making method and zonal transverse temperature gradient and super transverse growth (Super Lateral Growth, SLG) more relevant.When being radiated at the amorphous silicon membrane energy and surpassing super transverse growth point, zonal transverse temperature gradient is big more, and then the grain-size of formed low-temperature polysilicon film is big more, otherwise, then more little.In the manufacture method of above-mentioned low-temperature polysilicon film, the formed transverse temperature gradient of the lap of these a plurality of irradiation areas and underlapped part is less, is unfavorable for forming the low-temperature polysilicon film of big crystal grain; And in the laser irradiation process, the energy of irradiation area lap is wayward, energy surpasses super transverse growth point easily, when energy surpasses super transverse growth point, the moment density of the nuclei of crystallization that amorphous silicon membrane produces can be reduced to very low, cause the low-temperature polysilicon film grain-size of formation to diminish, thereby reduced the electronic mobility of low-temperature polysilicon film.
Summary of the invention
For irradiation time length that solves making method for low-temperature multi-crystal silicon film in the prior art and the little problem of low-temperature polysilicon film grain-size that forms, be necessary to provide a kind of method for manufacturing polycrystalline silicon thin film at low temperature that can save irradiation time and can effectively increase the low-temperature polysilicon film grain-size of formation.
A kind of method for manufacturing polycrystalline silicon thin film at low temperature, it comprises the following steps: that a. provides a substrate, forms an amorphous silicon membrane on this substrate; B., one excimer laser producer is provided, and it penetrates one side light source pulse laser beam, and this area source pulse laser beam shines this amorphous silicon membrane and forms an irradiation area, and this irradiation area is in molten state; C. this excimer laser producer moves a small distance, this area source pulse laser beam is shone form another irradiation area on this amorphous silicon membrane, forms an interval region between this two irradiation area; D. repeating step c forms a plurality of irradiation areas and a plurality of interval region on this amorphous silicon membrane.
Compared with prior art, in the manufacture method of the present invention, this excimer laser producer sends one side light source pulse laser beam, because this area source pulse laser beam is big than the irradiated area of the column laser beam of prior art, when utilizing this this amorphous silicon membrane of area source laser beam irradiation, needn't move up and down this excimer laser producer, just can form an irradiation area, thereby saved irradiation time, enhanced productivity.And the transverse temperature difference of this irradiation area and this interval region is bigger than the transverse temperature difference of the lap of prior art and underlapped part, shine in the laser energy of this amorphous silicon membrane more easy to control, avoid energy to surpass super transverse growth point, thereby effectively increase the grain-size of prepared low-temperature polysilicon film, improved the carrier mobility of low-temperature polysilicon film.
Description of drawings
Fig. 1 is a kind of synoptic diagram of method for manufacturing polycrystalline silicon thin film at low temperature of better embodiment.
Embodiment
Please refer to Fig. 1, is the synoptic diagram of the method for manufacturing polycrystalline silicon thin film at low temperature of a kind of better embodiment of the present invention.
This method for manufacturing polycrystalline silicon thin film at low temperature comprises following five steps:
A., one substrate 10 is provided; Adopt vacuum deposition method, form a buffer layer 11 and an amorphous silicon membrane 12 successively on these substrate 10 surfaces.
This substrate 10 is glass substrates, this buffer layer 11 is silica layers, also can be by silica layer and the common multilayered structure of forming of nitrogen silicon layer, this buffer layer 11 is used for preventing that the impurity in this substrate 10 from upwards spreading and influencing formed low-temperature polysilicon film quality at subsequent technique.Wherein, this buffer layer 11 and this amorphous silicon membrane 12 also can adopt methods such as sputter, low-pressure chemical vapor deposition and plasma reinforced chemical vapour deposition.
B., one excimer laser producer 13 is provided, and it comprises a laser port 17 and an accurate regularly step motor 18.
It is one rectangular-shaped that this laser port 17 is, and penetrates one side light source pulse laser beams 14 by this laser port 17, and these area source pulse laser beam 14 length are 370mm, and wide is 0.4um.This area source pulse laser beam 14 be by the chlorination xenon (the XeCl molecule be stimulated form, in addition also can be stimulated and form by argon fluoride (ArF), KrF (KrF) or xenon fluoride (XeF) equimolecular, different molecules will produce different wavelength, and the output rating of excimer laser and irradiation time can suitably be adjusted according to the amorphous silicon membrane thickness that will generate.This precision regularly step motor 18 is arranged on this excimer laser producer 13, and this precision regularly step motor 18 is carried out the precision regulation and control by the parameter control of extraneous software set to step duration and distance.Drive these excimer laser producer 13 courts perpendicular to these laser port 17 long side direction horizontal timing steppings by this precision timing step motor 18.
C. this excimer laser producer 13 is aimed at this amorphous silicon membrane 12, and area source pulse laser beam 14 vertical irradiations that make ejaculation form an irradiation area 15 on these amorphous silicon membrane 12 surfaces.
Because laser has very high aggregation, so these irradiation area 15 shapes are consistent with these area source pulse laser beam 14 shapes, also is rectangular-shaped.This irradiation area 15 can be accepted more than 14 irradiation of this area source pulse laser beam, and its irradiation number of times can make this irradiation area 15 reach complete molten state according to the thickness adjustment of output power of laser and this amorphous silicon membrane 12.
D. this excimer laser producer 13 steppings one distance, this area source pulse laser beam 14 are radiated at and form another irradiation area 15 on this amorphous silicon membrane 12, and this two 15 adjacent of irradiation area forms an interval region 16.
Wherein, this excimer laser producer 13 is by regularly step motor 18 controls of this precision, the step direction of this excimer laser producer 13 is perpendicular to these laser port 17 long limits and in horizontal direction, the step distance of this excimer laser producer 13 is greater than the width of this irradiation area 15.These two irradiation areas, 15 parallel arrangements, this interval region 16 are not by these area source pulse laser beam 14 irradiations, and these interval region 16 width are preferably less than 1/5th of these irradiation area 15 width.
E. repeating step d forms a plurality of irradiation areas 15 and is positioned at a plurality of interval regions 16 of 15 of this two adjacent irradiation areas on this amorphous silicon membrane 12, finish the irradiation process of this amorphous silicon membrane 12.
In manufacture method of the present invention, because the temperature of this irradiation area 15 is greater than the temperature of this interval region 16, so produce a transverse temperature gradient between this irradiation area 15 and this interval region 16.Heterogeneous nucleation takes place with the interface of this interval region 16 in this irradiation area 15, and nucleus is grown up along the irradiation area of this amorphous silicon membrane 12 and the transverse temperature gradient direction of interval region, and finally forms low-temperature polysilicon film.
In the present embodiment, also can provide a temperature, can play the curing speed that reduces these amorphous silicon membrane 12 melts, the effect that prolongs the grain growing time, thereby more help obtaining the low-temperature polysilicon thin film material of big grain-size this substrate 10.Under this substrate 10 can the withstand temp prerequisite, can adopt process furnace (figure does not show) and a soaking plate (scheming not show) carry out even heating to this substrate 10, these substrate 10 temperature can maintain between 300 ℃～400 ℃ in the inventive method.
Compared with prior art, in the above-mentioned method for manufacturing polycrystalline silicon thin film at low temperature, this excimer laser producer 13 sends one side light source pulse laser beam 14, because this area source pulse laser beam 14 is big than the irradiated area of column laser beam, when utilizing these area source laser beam 14 these amorphous silicon membranes 12 of irradiation, needn't move up and down this excimer laser producer 13, just can form an irradiation area 15, thereby saved irradiation time, enhanced productivity.And the transverse temperature difference of this irradiation area 15 and this interval region 16 is bigger than the transverse temperature difference of the lap of prior art and underlapped part, and the grain-size of the low-temperature polysilicon film that forms is relevant with super transverse growth point with the transverse temperature gradient, when the energy that is radiated at this amorphous silicon membrane 12 surpasses super transverse growth point, the transverse temperature gradient is big more, the grain-size of formed low-temperature polysilicon film is big more, so the formed low-temperature polysilicon film of manufacture method of the present invention has bigger grain-size; The laser energy that shines this amorphous silicon membrane 12 is by its irradiation number of times decision, and is easy to control than prior art, avoids energy to surpass super transverse growth point; Cooperate higher substrate 10 temperature can reduce curing speed, the prolongation grain growing time of melt, has larger sized crystal grain thereby form, improve the carrier mobility of prepared low-temperature polysilicon film, effectively strengthened the electrical property of prepared low-temperature polysilicon film.
Claims (10)
1. method for manufacturing polycrystalline silicon thin film at low temperature, it comprises the following steps:
A., one substrate is provided, on this substrate, forms an amorphous silicon membrane;
B., one excimer laser producer is provided, and it penetrates one side light source pulse laser beam, and this area source pulse laser beam shines this amorphous silicon membrane and forms an irradiation area, and this irradiation area is in molten state;
C. this excimer laser producer moves a small distance, this area source pulse laser beam is shone form another irradiation area on this amorphous silicon membrane, forms an interval region between this two irradiation area;
D. repeating step c forms a plurality of irradiation areas and a plurality of interval region on this amorphous silicon membrane.
2. method for manufacturing polycrystalline silicon thin film at low temperature as claimed in claim 1 is characterized in that: this excimer laser producer comprises a step motor among the step b, and this step motor is controlled this excimer laser producer and moved.
3. method for manufacturing polycrystalline silicon thin film at low temperature as claimed in claim 1 is characterized in that: the laser port of this excimer laser producer is one rectangular-shaped among the step b.
4. method for manufacturing polycrystalline silicon thin film at low temperature as claimed in claim 1 is characterized in that: this area source pulse laser beam length is 370mm among the step b.
5. method for manufacturing polycrystalline silicon thin film at low temperature as claimed in claim 1 is characterized in that: this area source pulse laser beam width is 0.4um among the step b.
6. method for manufacturing polycrystalline silicon thin film at low temperature as claimed in claim 1 is characterized in that: this irradiation area is one rectangular-shaped among the step b.
7. method for manufacturing polycrystalline silicon thin film at low temperature as claimed in claim 1 is characterized in that: this two adjacent irradiation area parallel arrangement among the step b.
8. method for manufacturing polycrystalline silicon thin film at low temperature as claimed in claim 1 is characterized in that: this interval region width is less than 1/5th of this irradiation area width among the step c.
9. method for manufacturing polycrystalline silicon thin film at low temperature as claimed in claim 1 is characterized in that: this substrate is applied a temperature between 300 ℃～400 ℃.
10. method for manufacturing polycrystalline silicon thin film at low temperature as claimed in claim 1 is characterized in that: any one in this amorphous silicon membrane employing vacuum evaporation, sputter, low-pressure chemical vapor deposition or the plasma chemical vapor deposition process made.
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| CN2006100633476A CN101168474B (en) | 2006-10-27 | 2006-10-27 | Method for manufacturing polycrystalline silicon thin film at low temperature |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468453A (en) * | 2010-11-01 | 2012-05-23 | 三星移动显示器株式会社 | Laser crystallization system and method of manufacturing display apparatus using the same |
| WO2015043081A1 (en) * | 2013-09-29 | 2015-04-02 | 京东方科技集团股份有限公司 | Method for manufacturing low-temperature polycrystalline silicon thin film, thin film transistor, and display apparatus |
| CN104538402A (en) * | 2014-12-30 | 2015-04-22 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| US9349870B2 (en) | 2013-09-29 | 2016-05-24 | Boe Technology Group Co., Ltd | Method for forming low-temperature polysilicon thin film, thin film transistor and display device |
| CN105990098A (en) * | 2015-02-16 | 2016-10-05 | 上海和辉光电有限公司 | Method for forming polycrystalline silicon thin film and thin film transistor comprising polycrystalline silicon thin film |
| CN103094081B (en) * | 2011-11-07 | 2017-03-01 | 三星显示有限公司 | Crystallization system, crystallization method, organic light-emitting display device and manufacture method |
| CN106087040B (en) * | 2016-07-14 | 2018-07-27 | 京东方科技集团股份有限公司 | Multichip semiconductor crystallization system and the method that polycrystallization is carried out to single crystalline semiconductor substrate |
| CN110525034A (en) * | 2019-10-08 | 2019-12-03 | 太仓市何氏电路板有限公司 | A kind of PCB ink printing equipment and its working method controlling film thickness |
| CN115861320A (en) * | 2023-02-28 | 2023-03-28 | 天津中德应用技术大学 | Intelligent detection method for automobile part machining information |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100296109B1 (en) * | 1998-06-09 | 2001-10-26 | 구본준, 론 위라하디락사 | Thin Film Transistor Manufacturing Method |
| US6509204B2 (en) * | 2001-01-29 | 2003-01-21 | Xoptix, Inc. | Transparent solar cell and method of fabrication |
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2006
- 2006-10-27 CN CN2006100633476A patent/CN101168474B/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468453A (en) * | 2010-11-01 | 2012-05-23 | 三星移动显示器株式会社 | Laser crystallization system and method of manufacturing display apparatus using the same |
| CN102468453B (en) * | 2010-11-01 | 2016-06-29 | 三星显示有限公司 | Laser crystallization system and the method using this system manufacture display device |
| CN103094081B (en) * | 2011-11-07 | 2017-03-01 | 三星显示有限公司 | Crystallization system, crystallization method, organic light-emitting display device and manufacture method |
| US9349870B2 (en) | 2013-09-29 | 2016-05-24 | Boe Technology Group Co., Ltd | Method for forming low-temperature polysilicon thin film, thin film transistor and display device |
| WO2015043081A1 (en) * | 2013-09-29 | 2015-04-02 | 京东方科技集团股份有限公司 | Method for manufacturing low-temperature polycrystalline silicon thin film, thin film transistor, and display apparatus |
| CN104538402A (en) * | 2014-12-30 | 2015-04-22 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| CN104538402B (en) * | 2014-12-30 | 2018-01-23 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof and display device |
| CN105990098A (en) * | 2015-02-16 | 2016-10-05 | 上海和辉光电有限公司 | Method for forming polycrystalline silicon thin film and thin film transistor comprising polycrystalline silicon thin film |
| CN105990098B (en) * | 2015-02-16 | 2019-09-13 | 上海和辉光电有限公司 | Form the method for polysilicon membrane and the thin film transistor (TFT) comprising polysilicon membrane |
| CN106087040B (en) * | 2016-07-14 | 2018-07-27 | 京东方科技集团股份有限公司 | Multichip semiconductor crystallization system and the method that polycrystallization is carried out to single crystalline semiconductor substrate |
| CN110525034A (en) * | 2019-10-08 | 2019-12-03 | 太仓市何氏电路板有限公司 | A kind of PCB ink printing equipment and its working method controlling film thickness |
| CN115861320A (en) * | 2023-02-28 | 2023-03-28 | 天津中德应用技术大学 | Intelligent detection method for automobile part machining information |
| CN115861320B (en) * | 2023-02-28 | 2023-05-12 | 天津中德应用技术大学 | Intelligent detection method for automobile part machining information |
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Address after: 518109 Longhua, Shenzhen, town, Foxconn science and Technology Industrial Park E District, building 1, floor 4, Co-patentee after: Chimei Optoelectronics Co., Ltd. Patentee after: Qunkang Technology (Shenzhen) Co., Ltd. Address before: 518109 Longhua, Shenzhen, town, Foxconn science and Technology Industrial Park E District, building 1, floor 4, Co-patentee before: Innolux Display Group Patentee before: Qunkang Technology (Shenzhen) Co., Ltd. |
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Granted publication date: 20110209 Termination date: 20191027 |
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