CN101148016A - Method for correcting CMP working technology condition - Google Patents
Method for correcting CMP working technology condition Download PDFInfo
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- CN101148016A CN101148016A CNA2006101162511A CN200610116251A CN101148016A CN 101148016 A CN101148016 A CN 101148016A CN A2006101162511 A CNA2006101162511 A CN A2006101162511A CN 200610116251 A CN200610116251 A CN 200610116251A CN 101148016 A CN101148016 A CN 101148016A
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Abstract
The present invention discloses method of correcting the technological conditions for CMP operation, and different technological conditions for CMP operation are selected based on different grinding rate trend parameter so as to control film thickness in the product in high film thickness homogeneity. The so-called grinding rate trend parameter is the ratio between the grinding rate in the central area of the silicon chip and that in some edge area.
Description
Technical field
The present invention relates to the CMP technology in a kind of semiconductor fabrication process, relate in particular to a kind of method of the CMP of correction working technology condition.
Background technology
CMP (chemically mechanical polishing) is one of technology very crucial in the semiconductor fabrication process.Existing C MP technology is used fixing process conditions when the same membranous operation of same goods.
Because this method is not considered the influence of factors such as many CMP consumptive materials such as grinding pad, correction-plate, retaining ring, the thickness that tends to cause residual film in the working control process particularly homogeneity has bigger fluctuation, especially very big in the peripheral position fluctuation, cause product to exceed beyond the specification even useless sheet when serious.
Summary of the invention
Technical problem to be solved by this invention provides a kind of method of the CMP of correction working technology condition, it can select different CMP working technology conditions according to different grinding rate tendency parameters, and then can control the product thickness, improve the homogeneity of product thickness.
In order to solve above technical problem, the invention provides a kind of method of the CMP of correction working technology condition, it selects the CMP working technology condition according to the grinding rate tendency parameter of product, the wherein different corresponding different CMP working technology conditions of grinding rate tendency parameter, described grinding rate tendency parameter is that silicon chip is at the grinding rate of central area and the ratio of certain regional grinding rate of edge.
Because the present invention can select different CMP working technology conditions according to the different grinding rate tendency parameters of CMP equipment, and the process conditions of different grinding rates tendency parameter correspondence are the best process conditions of rule of thumb summing up out under this parameter, this experience main reference the thickness and the homogeneity of residual film, the processing result that obtains so just can improve the homogeneity of product thickness.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 is a flow chart of the present invention;
Fig. 2 is the thickness curve map that the present invention processes under different condition.
The specific embodiment
Fig. 1 is a flow chart of the present invention.In the first half flow process, be mainly used in and determine grinding rate tendency parameter and homogeneity, at first grinding rate tendency parameter-definition is: silicon chip is at the grinding rate of central area and the ratio of certain regional grinding rate of edge, reflect the difference of silicon chip at grinding rate and other regional grinding rate of edge of central area by this parameter, it also can directly reflect the influence of factors such as many consumptive materials such as grinding pad, correction-plate, retaining ring to the CMP equipment state.When grinding rate tendency parameter greater than 1 the time, illustrate that the grinding rate of this moment has the fast tendency in centre; When grinding rate tendency parameter less than 1 the time, illustrate that grinding rate at this moment has the fast tendency in edge.The tendency parameter is approaching or equal 1, illustrates that the middle at this moment grinding rate with the edge is close.The process of determining grinding rate tendency parameter and homogeneity is as follows:
Inquire at first whether product is test for the first time, if, determine the position of residual film on-line testing point by the test residual-film thickness line of writing music, if not, then directly test nine location points or the thickness of multiple spot more, and obtain the scope (comprising maximum and minimum of a value) of mean value and thickness.In addition, before the membranous first Application mating plate of difference grinding rate control milling time, determine on-line testing point position, confirm tendency parameter correlation test point by test grinding rate curve.When next having a fling at mating plate, obtain mating plate grinding rate size and homogeneity, obtain grinding rate tendency parameter according to computing formula simultaneously, grinding rate tendency CALCULATION OF PARAMETERS formula is exactly that silicon chip is at the grinding rate of central area and the ratio of certain regional grinding rate of edge.
After determining good grinding rate tendency parameter, then select corresponding technological conditions according to this parameter.Determining of corresponding technological conditions then is according to the data of the thickness of compiling residual film and homogeneity and the correlation between the grinding rate tendency parameter, and then the process conditions of setting up.The corresponding different process conditions of grinding rate tendency parameter (CER) as shown in table 1, different.Be between 0.97 ~ 1.03 such as CER, its corresponding process conditions name is called F***, and such as being F080, the major parameter I/M/R in the process conditions is 4/7/5 at this moment, and this moment, the speed at this technology edge was approaching with the speed that is positioned at the central area; Be between 0.91 ~ 0.96 such as CER again, its corresponding process conditions name is called H***, and such as being H080, the major parameter I/M/R in the process conditions is 4/6.5/5 at this moment, and this moment, this technology was in the somewhat slow state in edge.
In the CMP process conditions, comprise the process menu that the process menu, abrasive disk of concrete rubbing down are repaired and clean menu etc.I/M/R is the several pressure parameters in the CMP process menu, and unit is PSI, and wherein: I is the abbreviation of Inner tube (interior pipe); M is the abbreviation of Membrane (barrier film); R is the abbreviation of Retainet ring (retaining ring).F***, H*** etc. are the codes of CMP process conditions, have contained the important information of CMP process menu, wherein: F, the code of the menu that first letter representative such as H is relevant with membranous or product etc.; * * is a numerical value, utilizes the numerical value of * * * can learn concrete parameter.
Table 1.
| Grinding rate tendency parameter (CER) | The process conditions name of code | Major parameter in the process conditions (as: I/M/R) | The process conditions remarks |
| CER＝1.1~1.15 | C*** | 6/8.0/5 | The edge is fast |
| CER＝1.03~1.09 | D*** | 5/7.5/5 | The edge is a bit fast |
| CER＝0.97~1.03 | F*** | 4/7/5 | Approaching |
| CER＝0.91~0.96 | H*** | 4/6.5/5 | The edge is a bit slow |
| CER＝0.85~0.90 | G*** | 3.5/6/5 | The edge is slower |
| ……. | ……. | ……. | ……. |
In CER=0.91 ~ 0.96 o'clock, will adopt the residual film thickness curve after above-mentioned two process conditions F080 and the H080 processing to compare and can see, the two residual film thickness is approaching, but selects the homogeneity of H080 to be significantly improved.
In addition, because above table is rule of thumb put in order and drawn,, generally be thickness and homogeneity correction CMP working technology condition according to the residual film of processing back actual measurement so might need further correction.When using next time, can use and revise the back process conditions like this.
Claims (3)
1. method of revising the CMP working technology condition, it is characterized in that, grinding rate tendency parameter according to product is selected the CMP working technology condition, the wherein different corresponding different CMP working technology conditions of grinding rate tendency parameter, described grinding rate tendency parameter is that silicon chip is at the grinding rate of central area and the ratio of certain regional grinding rate of edge.
2. the method for correction CMP working technology condition as claimed in claim 1 is characterized in that, described different CMP working technology condition is to compile according to the correlation of the thickness of residual film and homogeneity and grinding rate tendency parameter to obtain.
3. the method for correction CMP working technology condition as claimed in claim 1 is characterized in that it further comprises: according to the thickness and the homogeneity correction CMP working technology condition of the residual film of actual measurement after the processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101162511A CN100500370C (en) | 2006-09-20 | 2006-09-20 | Method for correcting CMP working technology condition |
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| CNB2006101162511A CN100500370C (en) | 2006-09-20 | 2006-09-20 | Method for correcting CMP working technology condition |
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| CN101148016A true CN101148016A (en) | 2008-03-26 |
| CN100500370C CN100500370C (en) | 2009-06-17 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102152237A (en) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | Method and system for controlling manufacturing procedures of chemical mechanical polishing bench |
| TWI492288B (en) * | 2010-02-11 | 2015-07-11 | 聯華電子股份有限公司 | Method for controling polishing wafer |
| CN108122751A (en) * | 2017-11-30 | 2018-06-05 | 上海华虹宏力半导体制造有限公司 | Chemical and mechanical grinding method |
| CN110673557A (en) * | 2019-09-27 | 2020-01-10 | 南京大学 | Intelligent chemical system based on process condition selection |
| CN112331561A (en) * | 2020-11-20 | 2021-02-05 | 上海华力集成电路制造有限公司 | Method for improving chemical mechanical polishing yield |
-
2006
- 2006-09-20 CN CNB2006101162511A patent/CN100500370C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102152237A (en) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | Method and system for controlling manufacturing procedures of chemical mechanical polishing bench |
| CN102152237B (en) * | 2010-02-11 | 2013-02-27 | 中芯国际集成电路制造(上海)有限公司 | Method and system for controlling manufacturing procedures of chemical mechanical polishing bench |
| TWI492288B (en) * | 2010-02-11 | 2015-07-11 | 聯華電子股份有限公司 | Method for controling polishing wafer |
| CN108122751A (en) * | 2017-11-30 | 2018-06-05 | 上海华虹宏力半导体制造有限公司 | Chemical and mechanical grinding method |
| CN110673557A (en) * | 2019-09-27 | 2020-01-10 | 南京大学 | Intelligent chemical system based on process condition selection |
| CN110673557B (en) * | 2019-09-27 | 2021-09-24 | 南京大学 | Intelligent chemical system based on process condition selection |
| CN112331561A (en) * | 2020-11-20 | 2021-02-05 | 上海华力集成电路制造有限公司 | Method for improving chemical mechanical polishing yield |
| CN112331561B (en) * | 2020-11-20 | 2024-04-26 | 上海华力集成电路制造有限公司 | Method for improving yield of chemical mechanical polishing |
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| CN100500370C (en) | 2009-06-17 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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