CN101452266A - Dielectric substance chemical mechanical polishing time feedback control method and system between layers - Google Patents
Dielectric substance chemical mechanical polishing time feedback control method and system between layers Download PDFInfo
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- CN101452266A CN101452266A CNA2007101719549A CN200710171954A CN101452266A CN 101452266 A CN101452266 A CN 101452266A CN A2007101719549 A CNA2007101719549 A CN A2007101719549A CN 200710171954 A CN200710171954 A CN 200710171954A CN 101452266 A CN101452266 A CN 101452266A
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Abstract
The invention discloses a time feedback control method for interlamination dielectric substance chemical mechanical lapping. The method comprises: carrying out the interlamination dielectric substance chemical mechanical lapping of a group of wafers with preset quantity according to actual measurement thickness data of wafers and a preset lapping rate; acquiring time for lapping each wafer in the group of wafers respectively and providing an advanced process control system with the time as feedback time in turn; checking in turn whether each feedback time is in a preset controlled and limited range through the advanced control system, in which, retaining the data if the feedback time is in the preset controlled and limited range, if the feedback time is beyond the preset controlled and limited range, calculating a corrected value to replace the feedback time through the advanced control system; and determining the lapping time for each wafer in the next group of wafers with the same preset quantity according to the corrected feedback time through the advanced process control system, and determining the lapping time for each wafer through the feedback time corresponding to ordinal position of the wafer in the group.
Description
Technical field
The present invention relates to manufacture of semiconductor control field,, relate to the time FEEDBACK CONTROL of interlayer dielectric cmp with specifically.
Background technology
At present, for the cmp (CMP) of the interlayer dielectric (ILD) of wafer, all be to carry out by advanced process control system system (IAPC System) control.The IAPC system is for the ILD CMP processing procedure of a large amount of wafers, adopting following method to control it moves automatically and continuously: remove rate controlled ILD CMP processing procedure for the wafer of wherein a part (being half basically) according to the wafer thickness of actual measurement and setting, and for remaining wafer, the milling time reckoning that the time of its CMP is based on above-mentioned wafer obtains.Illustrate, with reference to shown in the following table 1, one has 8 wafers need carry out ILD CMP processing procedure, and wherein, wafer #1-#4 adopts the speed that removes of measured data and setting to grind.That is, adopt the Nova measuring method to measure before (perhaps calculating) grinding respectively and the wafer thickness after grinding,, draw the milling time of reality again according to the speed of setting that removes.For wafer #5-#8, they do not carry out actual measurement, and their CMP time is based on the milling time of aforesaid #1-#4 wafer and determines.At this moment, the milling time of #1-#4 is as feedback time, is used for the milling time of calculated for subsequent wafer.Generally speaking, the milling time of each wafer is to determine according to the feedback time of wafer corresponding with its ordinal position in last group.That is, the milling time of #5 wafer is that the milling time according to #1, #6 wafer is according to #2 or the like.In this way, can reduce general Measuring Time, effectively improve the operational paradigm of processing procedure.
Table 1
| Wafer | Milling time | Kind |
| #1 | 40s | Actual measurement |
| #2 | 35s | Actual measurement |
| #3 | 41s | Actual measurement |
| #4 | 39s | Actual measurement |
| #5 | 40s | Calculate |
| #6 | 35s | Calculate |
| #7 | 41s | Calculate |
| #8 | 39s | Calculate |
The shortcoming of this mode is also apparent, because the milling time reckoning that has the milling time of the wafer of half to be based on the wafer of front obtains, if the milling time of front is incorrect, they serve as that the milling time of the subsequent wafer that obtains of basis also is wrong with it.Well-known, the length of milling time is very important for wafer passing rate, and overlong time (cross and grind) or time, too short (owing to grind) all can cause wafer to be scrapped.And adopting above-mentioned method, the possibility that makes wafer scrap has increased.
Such as, with reference to top table 1, normal milling time T should satisfy following conditions:
35s<T<40s，
The time that #2 wafer in the table 1 grinds is not enough, and the #3 wafer is long.This may be to be caused by two kinds of reasons:
1) owing to the individual instances difference of wafer, for #2 and #3 wafer, their milling time is suitable, not different damage.But the milling time of follow-up #6 and #7 wafer is based on #2 and #3 wafer, and #6 and #7 wafer just very might damage.
2) owing to the mistake in the processing procedure, the situation of grinding has appearred owing to grind or cross in #2 and #3 wafer, at this moment, because the follow-up #6 and the milling time of #7 wafer are still determined according to the milling time of #2 and #3 wafer, #6 and #7 wafer also can be damaged, so the mistake in the processing procedure has been exaggerated.
Summary of the invention
The present invention aims to provide a kind of time feedback control technology of interlayer dielectric cmp, to reduce because the generation of the continuous mistake that the milling time mistake of formerly wafer causes.
The present invention at first provides a kind of time feedback control method of interlayer dielectric cmp, wherein, this interlayer dielectric cmp is by the control of advanced process control system system, and this method comprises: the cmp that one group of wafer of predetermined quantity is carried out successively interlayer dielectric according to the grinding rate of wafer actual measurement thickness data and setting; Obtain the time of grinding each wafer in described one group of wafer respectively, offer described advanced process control system system successively as feedback time; Described advanced control system checks that successively each feedback time whether in the expectant control limited field, if in the expectant control limited field, keeps this data; If exceeded the expectant control limited field, this advanced control system calculates a modified value and replaces this feedback time; Described advanced process control system system is according to determine it is the milling time of each wafer in next group wafer of this predetermined quantity equally through the feedback time of revising, wherein, the milling time of each wafer is determined by the feedback time corresponding with the ordinal position of this wafer in this group.
Wherein, described wafer actual measurement thickness data comprise use the wafer thickness before the grinding that the Nova measuring method measures and grind after wafer thickness.
When feedback time exceeded predetermined scope, the correction that this feedback time is carried out comprised: if this feedback time does not exceed specification limits, use the mean value of all feedback times of this group wafer to replace; If this feedback time exceeds specification limits, use the mean value of other feedback times except this feedback time in this group wafer to replace.And, when having more than one feedback time to exceed specification limits in one group of feedback time, get rid of the feedback time that all exceed specification limits during the mean value of calculating feedback time.
The present invention also proposes a kind of time feedback control system of interlayer dielectric cmp, be applied to control the advanced process control system system of this interlayer dielectric cmp, this time feedback control system comprises: the feedback time deriving means, obtain the milling time of one group of wafer of predetermined quantity being carried out successively each wafer in the process of cmp of interlayer dielectric according to the grinding rate of wafer actual measurement thickness data and setting, these milling times are by successively as feedback time; The feedback time correcting device checks that successively each feedback time whether in the expectant control limited field, if in the expectant control limited field, keeps this data; If exceeded the expectant control limited field, then calculate a modified value and replace this feedback time; The feedback time that this process is revised is provided for described advanced process control system system, being used for determining is the milling time of next each wafer of group wafer of this predetermined quantity equally, wherein, the milling time of each wafer is determined by the feedback time corresponding with the ordinal position of this wafer in this group.
Described wafer actual measurement thickness data comprise use the wafer thickness before the grinding that the Nova measuring method measures and grind after wafer thickness.
Wherein, this feedback time correcting device comprises: first correcting device, when feedback time does not exceed specification limits, use the mean value of all feedback times of this group wafer to replace; Second correcting device when feedback time exceeds specification limits, uses the mean value of other feedback times except this feedback time in this group wafer to replace.When having more than one feedback time to exceed specification limits in one group of feedback time, get rid of the feedback time that all exceed specification limits during the mean value of described first correcting device and second correcting device calculating feedback time.
Adopt technical scheme of the present invention, can find the data of apparent error effectively, thereby avoid the generation of the continuous mistake that causes owing to use these data.
Description of drawings
The above and other features of the present invention, character and advantage will become more obvious by the description below in conjunction with drawings and Examples, in the accompanying drawings, identical Reference numeral is represented identical feature all the time, wherein:
Fig. 1 is the process flow diagram of the time feedback control method of interlayer dielectric cmp of the present invention;
Fig. 2 is the structured flowchart of the time feedback control system of interlayer dielectric cmp of the present invention.
Embodiment
With reference to shown in Figure 1, the invention provides a kind of time feedback control method 100 of interlayer dielectric cmp, wherein, this interlayer dielectric cmp is by the control of advanced process control system system, and this method comprises:
102. one group of wafer of predetermined quantity is carried out successively the cmp of interlayer dielectric according to the grinding rate of wafer actual measurement thickness data and setting.Wherein this wafer actual measurement thickness data comprise use the wafer thickness before the grinding that the Nova measuring method measures and grind after wafer thickness.
104. obtain the time of grinding each wafer in one group of wafer respectively, offer the advanced process control system system successively as feedback time.
106. advanced control system checks that successively each feedback time whether in the expectant control limited field, if in the expectant control limited field, keeps this data; If exceeded the expectant control limited field, this advanced control system calculates a modified value and replaces this feedback time.Wherein, if this feedback time does not exceed specification limits, use the mean value of all feedback times of this group wafer to replace; If this feedback time exceeds specification limits, use the mean value of other feedback times except this feedback time in this group wafer to replace.Further, when having more than one feedback time to exceed specification limits in one group of feedback time, get rid of the feedback time that all exceed specification limits during the mean value of calculating feedback time.
108. advanced process control system system is according to determine it is the milling time of each wafer in next group wafer of this predetermined quantity equally through the feedback time of revising, wherein, the milling time of each wafer is determined by the feedback time corresponding with the ordinal position of this wafer in this group.
With reference to following Example, further specify the course of work of said method 100:
It is the ILD CMP processing procedure of 8 wafer #1-#8 equally that table 2 shows:
Table 2
| Wafer | Milling time | Kind |
| #1 | 40s | Actual measurement |
| #2 | 33s | Actual measurement |
| #3 | 38s | Actual measurement |
| #4 | 39s | Actual measurement |
| #5 | 40s | Calculate |
| #6 | 37.5s | Calculate |
| #7 | 38s | Calculate |
| #8 | 39s | Calculate |
Step 102,104 and 108 and existing technology type seemingly, no longer repeat specification herein.In step 106, restriction of definition control herein and specification limits are as follows:
Normally (in the control restriction): 35s≤T≤40s;
Outside the control restriction, in the specification limits: 30≤T＜35s, 40s＜T≤45s;
Outside the regulating scope: T＜30,45s＜T.
In table 2, the milling time 33s of #2 wafer is in " outside the control restriction; in the specification limits ", therefore it can not directly use as the milling time of #6 wafer, and should use the mean value of all feedback times of this group wafer to replace, promptly the finally definite milling time of #6 wafer is 37.5s.
Situation with reference to following table 3:
Table 3
| Wafer | Milling time | Kind |
| #1 | 40s | Actual measurement |
| #2 | 36s | Actual measurement |
| #3 | 38s | Actual measurement |
| #4 | 29s | Actual measurement |
| #5 | 40s | Calculate |
| #6 | 36s | Calculate |
| #7 | 38s | Calculate |
| #8 | 38s | Calculate |
In this example, definition control restriction and specification limits are constant:
Normally (in the control restriction): 35s≤T≤40s;
Outside the control restriction, in the specification limits: 30≤T＜35s, 40s＜T≤45s;
Outside the regulating scope: T＜30,45s＜T.
In table 3, the milling time 29s of #4 wafer is at " outside the regulating scope ", therefore it can not directly use as the milling time of #8 wafer, and the mean value of other feedback times except this feedback time is replaced in should this group wafer, and promptly the milling time finally determined of #8 wafer is 38s.
Situation shown in the reference table 4,
Table 4
| Wafer | Milling time | Kind |
| #1 | 40s | Actual measurement |
| #2 | 33s | Actual measurement |
| #3 | 38s | Actual measurement |
| #4 | 29s | Actual measurement |
| #5 | 40s | Calculate |
| #6 | 37s | Calculate |
| #7 | 38s | Calculate |
| #8 | 37s | Calculate |
In this example, definition control restriction and specification limits are constant:
Normally (in the control restriction): 35s≤T≤40s;
Outside the control restriction, in the specification limits: 30≤T＜35s, 40s＜T≤45s;
Outside the regulating scope: T＜30,45s＜T.
In table 4, the milling time 33s of #2 wafer is in " outside the control restriction, in the specification limits ", and the milling time 29s of #4 wafer is at " outside the regulating scope ".Therefore they all can not directly use as the milling time of #6 and #8 wafer.Owing to occurred a plurality of incorrect situations of wafer grinding wafers time herein, the feedback time that when calculating mean value, need get rid of #4 " outside the regulating scope ", the milling time that is final #6 and #8 wafer all is 37s, and the average gained of milling time of #1-#3 wafer is arranged.
The situation of reference table 5:
Table 5
| Wafer | Milling time | Kind |
| #1 | 40s | Actual measurement |
| #2 | 48s | Actual measurement |
| #3 | 38s | Actual measurement |
| #4 | 29s | Actual measurement |
| #5 | 40s | Calculate |
| #6 | 39s | Calculate |
| #7 | 38s | Calculate |
| #8 | 39s | Calculate |
In this example, definition control restriction and specification limits are constant:
Normally (in the control restriction): 35s≤T≤40s;
Outside the control restriction, in the specification limits: 30≤T＜35s, 40s＜T≤45s;
Outside the regulating scope: T＜30,45s＜T.
In table 5, the milling time 29s of the milling time 48s of #2 wafer and #4 wafer is at " outside the regulating scope ".Therefore they all can not directly use as the milling time of #6 and #8 wafer.Owing to occurred a plurality of incorrect situations of wafer grinding wafers time herein, the feedback time that when calculating mean value, need get rid of #2 and #4 " outside the regulating scope ", the milling time that is final #6 and #8 wafer all is 39s, and the average gained of milling time of #1 and #3 wafer is arranged.
With reference to shown in Figure 2, the present invention has also disclosed a kind of time feedback control system 200 that realizes the interlayer dielectric cmp of above-mentioned method, be applied to control the advanced process control system system of this interlayer dielectric cmp, this time feedback control system 200 comprises:
Feedback time deriving means 202, obtain the milling time of one group of wafer of predetermined quantity being carried out successively each wafer in the process of cmp of interlayer dielectric according to the grinding rate of wafer actual measurement thickness data and setting, these milling times are by successively as feedback time.Wherein, this wafer actual measurement thickness data comprise use the wafer thickness before the grinding that the Nova measuring method measures and grind after wafer thickness.
Feedback time correcting device 204 checks that successively each feedback time whether in the expectant control limited field, if in the expectant control limited field, keeps this data; If exceeded the expectant control limited field, then calculate a modified value and replace this feedback time.This feedback time correcting device 204 further comprises: first correcting device 240, when feedback time does not exceed specification limits, use the mean value of all feedback times of this group wafer to replace; And second correcting device 242, when feedback time exceeds specification limits, use the mean value of other feedback times except this feedback time in this group wafer to replace.Wherein, when having more than one feedback time to exceed specification limits in one group of feedback time, get rid of the feedback time that all exceed specification limits during the mean value of first correcting device 240 and second correcting device, 242 calculating feedback times.
The feedback time that this process is revised is provided for described advanced process control system system, being used for determining is the milling time of next each wafer of group wafer of this predetermined quantity equally, wherein, the milling time of each wafer is determined by the feedback time corresponding with the ordinal position of this wafer in this group.
Need to prove that above-mentioned all details for method 100 are described and can be used to system 200.
Adopt technical scheme of the present invention, can find the data of apparent error effectively, thereby avoid the generation of the continuous mistake that causes owing to use these data.
The foregoing description provides to being familiar with the person in the art and realizes or use of the present invention; those skilled in the art can be under the situation that does not break away from invention thought of the present invention; the foregoing description is made various modifications or variation; thereby protection scope of the present invention do not limit by the foregoing description, and should be the maximum magnitude that meets the inventive features that claims mention.
Claims (8)
1. the time feedback control method of an interlayer dielectric cmp, wherein, this interlayer dielectric cmp is by the control of advanced process control system system, and this method comprises:
One group of wafer of predetermined quantity is carried out successively the cmp of interlayer dielectric according to the grinding rate of wafer actual measurement thickness data and setting;
Obtain the time of grinding each wafer in described one group of wafer respectively, offer described advanced process control system system successively as feedback time;
Described advanced control system checks that successively each feedback time whether in the expectant control limited field, if in the expectant control limited field, keeps this data; If exceeded the expectant control limited field, this advanced control system calculates a modified value and replaces this feedback time;
Described advanced process control system system is according to determine it is the milling time of each wafer in next group wafer of this predetermined quantity equally through the feedback time of revising, wherein, the milling time of each wafer is determined by the feedback time corresponding with the ordinal position of this wafer in this group.
2. the time feedback control method of interlayer dielectric cmp as claimed in claim 1 is characterized in that,
Described wafer actual measurement thickness data comprise use the wafer thickness before the grinding that the Nova measuring method measures and grind after wafer thickness.
3. the time feedback control method of interlayer dielectric cmp as claimed in claim 1 is characterized in that, when feedback time exceeded predetermined scope, the correction that this feedback time is carried out comprised:
If this feedback time does not exceed specification limits, use the mean value of all feedback times of this group wafer to replace;
If this feedback time exceeds specification limits, use the mean value of other feedback times except this feedback time in this group wafer to replace.
4. the time feedback control method of interlayer dielectric cmp as claimed in claim 3 is characterized in that,
When having more than one feedback time to exceed specification limits in one group of feedback time, get rid of the feedback time that all exceed specification limits during the mean value of calculating feedback time.
5. the time feedback control system of an interlayer dielectric cmp is applied to control the advanced process control system system of this interlayer dielectric cmp, and this time feedback control system comprises:
The feedback time deriving means, obtain the milling time of one group of wafer of predetermined quantity being carried out successively each wafer in the process of cmp of interlayer dielectric according to the grinding rate of wafer actual measurement thickness data and setting, these milling times are by successively as feedback time;
The feedback time correcting device checks that successively each feedback time whether in the expectant control limited field, if in the expectant control limited field, keeps this data; If exceeded the expectant control limited field, then calculate a modified value and replace this feedback time;
The feedback time that this process is revised is provided for described advanced process control system system, being used for determining is the milling time of next each wafer of group wafer of this predetermined quantity equally, wherein, the milling time of each wafer is determined by the feedback time corresponding with the ordinal position of this wafer in this group.
6. the time feedback control system of interlayer dielectric cmp as claimed in claim 5 is characterized in that,
Described wafer actual measurement thickness data comprise use the wafer thickness before the grinding that the Nova measuring method measures and grind after wafer thickness.
7. the time feedback control system of interlayer dielectric cmp as claimed in claim 5 is characterized in that, this feedback time correcting device comprises:
First correcting device when feedback time does not exceed specification limits, uses the mean value of all feedback times of this group wafer to replace;
Second correcting device when feedback time exceeds specification limits, uses the mean value of other feedback times except this feedback time in this group wafer to replace.
8. the time feedback control system of interlayer dielectric cmp as claimed in claim 5 is characterized in that,
When having more than one feedback time to exceed specification limits in one group of feedback time, get rid of the feedback time that all exceed specification limits during the mean value of described first correcting device and second correcting device calculating feedback time.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101934494B (en) * | 2009-07-03 | 2012-03-28 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method |
| CN106312792A (en) * | 2016-11-09 | 2017-01-11 | 上海华力微电子有限公司 | Method for dynamically regulating safe grinding time limit |
-
2007
- 2007-12-07 CN CNA2007101719549A patent/CN101452266A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101934494B (en) * | 2009-07-03 | 2012-03-28 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method |
| CN106312792A (en) * | 2016-11-09 | 2017-01-11 | 上海华力微电子有限公司 | Method for dynamically regulating safe grinding time limit |
| CN106312792B (en) * | 2016-11-09 | 2018-06-26 | 上海华力微电子有限公司 | A kind of method that dynamic adjusts safe milling time limit |
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Open date: 20090610 |