CN101145524A - Method for manufacturing variant barrier gallium nitride FET - Google Patents
Method for manufacturing variant barrier gallium nitride FET Download PDFInfo
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Abstract
The invention provides a method for producing variant potential barrier gallium nitride field effect tube, which comprises the following steps: growing a nucleation layer, an AlGaN buffer layer and a GaN channel layer on a substrate; growing an AlN isolating layer and an AlGaN barrier layer; coating a thick GaN cap layer on the AlGaN barrier layer to increase the potential-barrier height; thinning the GaN cap layer except for the part below the grate by using chlorine-based inductively coupled plasma dry corrosion process to increase the electron gas density of the underside channel and weaken the strong field peak; performing photoetching corrosion and making a source electrode and a drain electrode on the corroded AlGaN barrier layer, to reduce the ohmic contact resistance by using the thin potential barrier and high electron gas density; and making variant potential barrier field effect tube. The invention has the advantages that the grid electrode can be formed directly on the GaN cap layer without channeling, thereby significantly reducing the gate current and improving the reliability; the fabrication of field plate electrode is omitted to simplify the process, reduce the parasitic capacitance, and increase the gain; and the invention facilitates the research of millimeter wave high-frequency apparatuses.
Description
Technical field
The present invention relates to a kind of manufacture method of semiconductor device, especially a kind of manufacture method of variant barrier gallium nitride FET, specifically a kind of method of making the low highly reliable gallium nitride field effect transistor of grid current.Belong to technical field of semiconductor device.
Background technology
Strong polarization charge on the AlGaN/GaN heterogeneous interface and can be with rank to produce highdensity two-dimensional electron gas greatly makes the power output of GaN field effect transistor improve an order of magnitude than GaAs field effect transistor.But lot of experiments finds, this high-power FET stable very poor.Big forward grid voltage in high-power RF work, occurs, produce big forward grid current, cause the Schottky barrier degeneration.In addition, occur the highfield peak at grid by the edge of leaking a side in the raceway groove, the high energy hot electron that its produces jumps out outside the raceway groove, causes current collapse.High energy electron bump barrier layer produce lattice defect, and then the electronics of capturing in the raceway groove causes device performance degeneration.Power is big more, and the forward grid current is big more, and raceway groove electric field and thermionic energy are high more, and the performance degradation of device is just remarkable more.
Grid current during device work and the high field peak in the raceway groove all depend on heterostructure.The barrier energy that designs and produces Gao Erkuan suppresses tunnelling current and thermionic emission current.But the ohmic contact on source electrode and the drain electrode requires the attenuate potential barrier to increase tunnelling current again reduces contact resistance.Many authors use grooving technology to come barrier layer thickness under the attenuate gate electrode, and pinch-off voltage is shuffled, the high field peak in the reduction raceway groove.But, the grooving attenuate barrier layer thickness, grid current increased and cause the reliability variation.Many authors make MOS or the MIS structure reduces grid current.But these dielectric layers have increased the distance between gate electrode and raceway groove, have reduced mutual conductance and pinch-off voltage, and the electric field when having strengthened the raceway groove pinch off, the high energy hot electron that the is produced raceway groove that jumps out causes current collapse and device performance degeneration.These conflicting requirements have increased the difficulty of optimal design device heterostructure greatly.
Summary of the invention
Purpose of the present invention is intended to solve above-mentioned contradiction, provides a kind ofly can suppress the method that grid current can weaken the manufacturing variant barrier gallium nitride FET at the high field peak in the raceway groove again.The gate current separated into two parts.A part is that the metal electron tunneling barrier reaches channel layer or crosses over potential barrier by thermionic emission and reaches channel layer and cause.Increase barrier width and can suppress tunnelling current, improve barrier height and can weaken thermionic emission.Barrier height and width can utilize in the nitride distinctive polarization charge to cut out.The GaN cap layer of growth suitable thickness on the AlGaN barrier layer, the negative polarization electric charge on the GaN/AlGaN heterogeneous interface has been raised surface energy band, has both improved barrier height, has increased barrier width again.Find the solution Schrodinger equation and Poisson's equation discovery from being in harmony, can be with the dynamics of cutting out to depend on the thickness of GaN cap layer.The cap layer is thick more, and potential barrier is high more, and width is big more, and the electron gas density in the raceway groove is low more.Thereby can be optimized design by Theoretical Calculation.Yet the source of device requires to form low resistance ohmic again with drain electrode to be contacted, and wishes that the attenuate potential barrier increases tunnelling current.Therefore, must design different barrier structures at two kinds of contacts.Another part grid current is laterally to be tunneling to the barrier layer surface by metal electron, is given birth to by the artificial delivery of great-jump-forward electricity.Suitably this path is blocked on corrosion barrier layer surface, just can weaken this a part of grid current.
When raceway groove during by pinch off, the raceway groove under the grid is depleted, and the outer raceway groove of grid does not also exhaust.Huge conductivity drop between forming between this two parts raceway groove.In order to keep the continuous of channel current, inevitable at its highfield peak of intersection formation.Gate voltage, drain voltage and electron gas density are depended in the distribution of raceway groove electric field.Under same drain voltage, electron gas density is high more, raceway groove just must be under more negative grid voltage pinch off, both strengthened the electric field strength when raceway groove exhausts, strengthened again and exhaust raceway groove and do not exhaust conductivity drop between raceway groove, strengthened the high field peak.Methods such as use grooving come the attenuate potential barrier to increase mutual conductance, and the pinch-off behavior that back of the body potential barrier is improved raceway groove is set, and pinch-off voltage are shuffled, the electric field strength when having weakened the raceway groove pinch off, the high field peak in the raceway groove that just can weaken.Grooving has also reduced the electron gas density in the gate electrode lower channel, reduces to exhaust raceway groove and the electric conductivity difference that does not exhaust between raceway groove the high field that weakens peak.Can the band and the two-dimensional design of electric field and experimental results demonstrate, the heterostructure of change from the gate electrode to the drain electrode, make the channel electrons air tightness can weaken the high field peak and reduce series resistance to leaking to raise gradually, improve device radio frequency operation performance and improve stability from grid.
Technical solution of the present invention: a kind of method of making the low highly reliable gallium nitride FET of grid current, it is characterized in that the processing step of this method is divided into,
(1) on substrate, grow into stratum nucleare, AlGaN resilient coating and GaN channel layer, regrowth AlN separator and AlGaN barrier layer make and produce high electron gas density in the raceway groove;
(2) on the AlGaN barrier layer, cover thick GaN cap layer and improve barrier height, increase barrier width, suppress grid current and reduce the channel electrons air tightness, constitute the heterojunction material structure:
(3), block the path that electronics on the gate electrode laterally is tunneling to GaN cap layer, the reduction grid current with chloro inductively coupled plasma dry corrosion technology attenuate GaN cap layer the GaN cap layer except that gate electrode under.The GaN cap layer of grid beyond down blocks the path that electronics on the gate electrode laterally is tunneling to GaN cap layer, reduces grid current;
(4) utilize the GaN cap layer of attenuate to improve electron gas density in the following raceway groove, when reducing the raceway groove pinch off grid lower channel with the electric conductivity difference between the GaN cap layer lower channel of attenuate, reduction high field peak;
(5) window GaN cap layer the GaN cap layer that corrodes GaN cap layer and attenuate under grid of photoetching again, improve electron gas density, on the AlGaN barrier layer that erodes away, make source electrode and drain electrode, utilize thin potential barrier and high electron gas density to reduce ohmic contact resistance;
(6) the GaN cap layer of attenuate has improved the channel electrons air tightness, has reduced the series resistance of raceway groove;
Thereby made from grid to leaking the variant barrier field effect transistor that heterostructure changes gradually.As for how on the AlGaN barrier layer that erodes away, to make source electrode and drain electrode, be that those skilled in the art is known.
Advantage of the present invention: just on the GaN/AlGaN heterogeneous interface, produce one deck negative polarization electric charge at growing GaN channel layer on the AlGaN resilient coating, raised the potential barrier at the raceway groove back side.
When the raceway groove pinch off, electron charge disappears, and the back of the body potential barrier that this polarization charge produces makes the raceway groove trap still keep good quantum limit characteristic, improved the pinch-off behavior of raceway groove, reduced the high field peak, the current collapse that weakened has weakened the performance degradation in the long term device work; Thick GaN cap layer on the AlGaN barrier layer has improved barrier height, has increased barrier width, has suppressed thermionic emission current and the tunnelling current on the Schottky barrier.Reduced grid current, made device improve power output, improved reliability in higher positive grid voltage work; The GaN cap layer that the attenuate grid are outer has blocked that electronics laterally is tunneling to the current path of GaN cap layer by the great-jump-forward conduction on the gate electrode, has reduced grid current; Corrode GaN cap layer late barrier attenuate, the channel electrons air tightness increases.Directly on the AlGaN barrier layer, make ohmic contact and just can reduce ohmic contact resistance by big tunnelling current; The thicker AlN separator of growth has reduced the disordered alloy scattering of AlGaN alloy-layer effectively between AlGaN barrier layer and GaN channel layer, has improved the mobility of channel electrons; The GaN cap layer of attenuate has increased the electron gas density the raceway groove to leaking gradually from grid, has reduced to exhaust raceway groove and do not exhaust electric conductivity difference between raceway groove, and the high field peak in the raceway groove that weakened has reduced the performance degradation in current collapse and the long term device work.And reduced the series resistance of raceway groove, improved device performance; The gate electrode of this device directly is produced on the GaN cap layer, and not grooving can significantly reduce grid current, improves reliability.The fabricating yard plate electrode has not been simplified technology, has reduced parasitic capacitance again, has improved gain, helps developing the millimeter wave high-frequency element.
Description of drawings
Accompanying drawing 1 is variant barrier GaN field effect transistor electrode of the present invention and barrier junction composition.
Accompanying drawing 2 is material structure figure of variant barrier GaN field effect transistor of the present invention.
Accompanying drawing 3 is variant barrier GaN field-effect tube structure figure of the present invention.
1 is the source in the accompanying drawing, the 2nd, and grid, the 3rd, leak, the 4th, source potential is built, the 5th, the potential barrier between one gate electrode of source, the 6th, grid potential barrier, the 7th, the potential barrier between grid one drain electrode, the 8th, leak potential barrier, the 9th, substrate, the 10th, nucleating layer, the 11st, AlGaN resilient coating, the 12nd, GaN channel layer, the 13rd, AlN separator, the 14th, AlGaN barrier layer, the 15th, GaN cap layer, the 16th, gate electrode, the 17th, the GaN cap layer of attenuate, the 18th, source electrode, the 19th, drain electrode.
Embodiment
Contrast accompanying drawing 1, source 1, grid 2, source, grid and the drain electrode of field effect transistor represented in leakage 3 respectively, the heterostructure of the source potential base 4 under the electrode, grid potential barrier 6 and leakage potential barrier 8 expression sources, grid and leakage.The interelectrode heterostructure of potential barrier 7 expressions between potential barrier 5 between one gate electrode of source and grid one drain electrode.The potential barrier that the variant barrier field effect transistor requires grid potential barrier 6 to have Gao Erkuan suppresses thermionic emission and tunnelling current, and the electron gas density in its raceway groove is lower, and pinch off reduces the raceway groove electric field easily.Source potential base 4 and leakage potential barrier 8 have thin potential barrier, and the channel electrons air tightness is higher, are easy to make the low resistance ohmic contact.And the potential barrier 7 between potential barrier 5 between one gate electrode of source and grid one drain electrode is heterostructures of electron gas density gradual change, the high field that can weaken peak and reduction raceway groove series resistance.Obviously can't grow the heterostructure that satisfies these requirements by optimal design.Can only optimal design go out a kind of plasticity heterostructure, and then in the device manufacturing, seek the new technology of cutting out the each several part heterostructure, satisfy the variant barrier requirement.The heterostructure that covers GaN cap layer on the aforesaid AlGaN barrier layer just in time can be used for making this plasticity heterojunction.By optimal design, grow thick GaN cap layer improves barrier height and increases barrier width, reduces grid current.The electron gas density that reduces simultaneously in the raceway groove improves pinch-off voltage, forces down the high field peak in the raceway groove.Come the thickness of attenuate GaN cap layer then with chloro inductively coupled plasma dry corrosion technology, increase electron gas density, make the device heterostructure shown in 3 figure.It satisfies that source potential builds 4, the potential barrier 7 between the potential barrier 5 between one gate electrode of source, grid potential barrier 6, grid one drain electrode and the requirement of leaking potential barrier 8 each several part raceway grooves, makes the low highly reliable variant barrier field effect transistor of grid current.
Contrast accompanying drawing 2,3, describe variant barrier GaN field effect transistor the step of manufacture method: on substrate 9, grow into stratum nucleare 10, AlGaN resilient coating 11 and GaN channel layer 12; Growing AIN separator 13 and AlGaN barrier layer 14 make and produce high electron gas density in the raceway groove then; Cover thick GaN cap layer 15 then and improve barrier height, increase barrier width, suppress grid current and reduce the channel electrons air tightness, constitute heterojunction material structure shown in Figure 2:
Finish after the mesa-isolated at first photoetching and window, with among chloro inductively coupled plasma dry corrosion technology attenuate Fig. 3 except that gate electrode under the GaN cap layer the GaN cap layer 15, block the path that electronics on the gate electrode 16 laterally is tunneling to GaN cap layer 15, the reduction grid current.
The barrier layer that utilizes the GaN cap layer 17 of attenuate and do not have a GaN cap layer improves the electron gas density in the following raceway groove, when reducing the raceway groove pinch off grid lower channel with the electric conductivity difference between GaN cap layer 17 lower channel of attenuate, reduction high field peak.The photoetching GaN cap layer the GaN cap layer 17 that corrodes GaN cap layer 15 and attenuate under grid of windowing again.On the AlGaN barrier layer 14 that erodes away, make source electrode 18, drain electrode 19 then.Corrode the 15 late barrier layer attenuation of GaN cap layer near Ohmic electrode, electron gas density raises, and produces big tunnelling current, has reduced ohmic contact resistance.The GaN cap layer 17 of attenuate has strengthened the channel electrons air tightness, has reduced the series resistance of raceway groove.Thereby made from grid to leaking the variant barrier field effect transistor that heterostructure changes gradually, not only reduced grid current and the ohmic contact resistance but also the high field peak in the raceway groove that weakened are leaked in the source, suppressed current collapse, improved reliability.
Embodiment 1:
Choose low Al component than alloy A l
0.04Ga
0.96N is a resilient coating 11, and the growth 10nm GaN that undopes makes channel layer 12, the 2nm that grows thereon again A1N separator 13 and the 10nm Al that undopes that undopes
0.35Ga
0.65 N barrier layer 14 covers the 8nm GaN cap layer 15 that undopes at last.Find the solution Schrodinger equation and Poisson's equation is calculated to such an extent that the channel electrons air tightness is 9.76*10 from being in harmony
12Cm
-2, pinch-off voltage is 4.2V.When the GaN of attenuate cap layer 17 is 3nm, calculate electron gas density be 1.32*10
13Cm
-2On the AlGaN barrier layer 14 that GaN cap layer erodes away fully, make source electrode 18, drain electrode 19.After removing GaN cap layer 15, electron gas density is elevated to 1.74*10
13Cm
-2Formation from grid to the electric leakage sub-air tightness by 9.76*10
12Cm
-2Be elevated to 1.74*10
13Cm
-2The variant barrier field effect transistor.
Embodiment 2: choose low Al component than alloy A l
0.04Ga
0.96N is a resilient coating 11, and the growth 10nm GaN that undopes makes channel layer 12, the 2nm that grows thereon again A1N separator 13 and the 8nm Al that undopes that undopes
0.4Ga
0.6 N barrier layer 14 covers the 8nm GaN cap layer 15 that undopes at last.Find the solution Schrodinger equation and Poisson's equation is calculated to such an extent that the channel electrons air tightness is 10.5*10 from being in harmony
12Cm
-2, pinch-off voltage is 4.1V.When GaN cap layer attenuate is 3nm, calculate electron gas density be 1.465*10
13Cm
-2After GaN cap layer corroded fully, electron gas density was elevated to 2.06*10
13Cm
-2Formation from grid to the electric leakage sub-air tightness by 10.5*10
12Cm
-2Be elevated to 2.06*10
13Cm
-2The variant barrier field effect transistor.Compare with Production Example 1, the Al component that improves barrier layer 14 than after, the variation span that same cap layer changes electron gas density down is bigger.
Embodiment 3: choose low Al component than alloy A l
0.04Ga
0.96N is a resilient coating 11, and the growth 10nm GaN that undopes makes channel layer 12, and undope A1N separator 13 and 8nm doping content of the 2nm that grows thereon again is 5*10
18Cm
-3Al
0.35Ga
0.65 N barrier layer 14 covers the 8nm GaN cap layer 15 that undopes at last.Find the solution Schrodinger equation and Poisson's equation is calculated to such an extent that the channel electrons air tightness is 1.17*10 from being in harmony
13Cm
-2, pinch-off voltage is 4.5V.When GaN cap layer attenuate is 3nm, calculate electron gas density be 1.49*10
13Cm
-2After GaN cap layer corroded fully, electron gas density was elevated to 1.91*10
13Cm
-2Formation from grid to leaking electron gas by 1.17*10
13Cm
-2Be elevated to 1.91*10
13Cm
-2The variant barrier field effect transistor.Modulation-doped structure has improved the channel electrons air tightness, and the making ohmic contact is expected to reduce contact resistance on doped layer.
Claims (5)
1. a method of making variant barrier gallium nitride FET is characterized in that the processing step of this method is divided into,
(1) on substrate, grow into stratum nucleare, AlGaN resilient coating and GaN channel layer, regrowth AlN separator and AlGaN barrier layer make and produce high electron gas density in the raceway groove;
(2) on the AlGaN barrier layer, cover thick GaN cap layer and improve barrier height, increase barrier width, suppress grid current and reduce the channel electrons air tightness, constitute a kind of heterojunction material of cutting out barrier structure easily:
(3) remove the GaN cap layer of grid down with chloro inductively coupled plasma dry corrosion technology attenuate, block the path that electronics on the gate electrode laterally is tunneling to GaN cap layer, reduce grid current;
(4) utilize the GaN cap layer of attenuate to improve electron gas density in the following raceway groove, when reducing the raceway groove pinch off grid lower channel with the electric conductivity difference between the GaN cap layer lower channel of attenuate, reduction high field peak;
(5) window GaN cap layer the GaN cap layer that corrodes GaN cap layer and attenuate under grid of photoetching again improves electron gas density, reduces the series resistance of raceway groove; Making source, leakage ohmic contact source electrode and drain electrode on the AlGaN barrier layer that erodes away utilize thin potential barrier and high electron gas density to reduce contact resistance.
2. a kind of method of making variant barrier gallium nitride FET according to claim 1 is characterized in that choosing low Al component than alloy A l
0.04Ga
0.96N is a resilient coating, and the growth 10nm GaN that undopes makes channel layer, the 2nm that grows thereon again AlN separator and the 10nm Al that undopes that undopes
0.35Ga
0.65The N barrier layer covers the 8nm GaN cap layer that undopes at last.
3. a kind of method of making variant barrier gallium nitride FET according to claim 1 is characterized in that the channel electrons air tightness is 9.76*10
12Cm
-2, pinch-off voltage is 4.2V, when the GaN of attenuate cap layer was 3nm, electron gas density was 1.32*10
13Cm
-2, remove GaN cap layer after, electron gas density is elevated to 1.74*10
13Cm
-2, constitute from grid to the sub-air tightness of electric leakage by 9.76*10
12Cm
-2Be elevated to 1.74*10
13Cm
-2The variant barrier field effect transistor.
4. a kind of method of making variant barrier gallium nitride FET according to claim 1 is characterized in that the channel electrons air tightness is 10.5*10
12Cm
-2, pinch-off voltage is 4.1V, when GaN cap layer attenuate was 3nm, electron gas density was 1.465*10
13m
-2, after GaN cap layer corroded fully, electron gas density was elevated to 2.06*10
13Cm
-2, constitute from grid to the sub-air tightness of electric leakage by 10.5*10
12Cm
-2Be elevated to 2.06*10
13Cm
-2The variant barrier field effect transistor.
5. a kind of method of making variant barrier gallium nitride FET according to claim 1 is characterized in that the channel electrons air tightness is 1.17*10
13Cm
-2, pinch-off voltage is 4.5V, when GaN cap layer attenuate was 3nm, electron gas density was 1.49*10
13Cm
-2, after GaN cap layer corroded fully, electron gas density was elevated to 1.91*10
13Cm
-2, constitute from grid to leaking electron gas by 1.17*10
13Cm
-2Be elevated to 1.91*10
13Cm
-2The variant barrier field effect transistor.
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| CN102214584A (en) * | 2011-05-30 | 2011-10-12 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing InxAl1-xN composite barrier GaN-enhanced field-effect transistor |
| CN102339748A (en) * | 2011-11-01 | 2012-02-01 | 中国科学院微电子研究所 | Method for reducing etching damages of grid groove of HEMT (high electron mobility transistor) device |
| CN103022121A (en) * | 2011-09-27 | 2013-04-03 | 富士通株式会社 | Semiconductor device and method of manufacturing the same |
| CN105428410A (en) * | 2015-11-20 | 2016-03-23 | 成都嘉石科技有限公司 | GaN HEMT device with 2DEG recovery effect |
| CN103165668B (en) * | 2011-12-19 | 2016-06-22 | Nxp股份有限公司 | Semiconductor device |
| CN106653840A (en) * | 2016-11-15 | 2017-05-10 | 苏州捷芯威半导体有限公司 | Semiconductor device and manufacturing method thereof |
| CN106941116A (en) * | 2016-01-05 | 2017-07-11 | 南京励盛半导体科技有限公司 | One kind nitridation Gallium base heterojunction semiconductor device structures |
| WO2020007265A1 (en) * | 2018-07-02 | 2020-01-09 | Jin Wei | Nitride power device with cap regions and manufacturing method thereof |
| CN111707870A (en) * | 2020-06-24 | 2020-09-25 | 深港产学研基地（北京大学香港科技大学深圳研修院） | Method for extracting dynamic series resistance of GaN HEMT transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102214584A (en) * | 2011-05-30 | 2011-10-12 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing InxAl1-xN composite barrier GaN-enhanced field-effect transistor |
| CN103022121A (en) * | 2011-09-27 | 2013-04-03 | 富士通株式会社 | Semiconductor device and method of manufacturing the same |
| CN103022121B (en) * | 2011-09-27 | 2015-08-19 | 创世舫电子日本株式会社 | Semiconductor device and manufacture method thereof |
| CN102339748A (en) * | 2011-11-01 | 2012-02-01 | 中国科学院微电子研究所 | Method for reducing etching damages of grid groove of HEMT (high electron mobility transistor) device |
| CN102339748B (en) * | 2011-11-01 | 2013-08-14 | 中国科学院微电子研究所 | Method for reducing etching damages of grid groove of HEMT (high electron mobility transistor) device |
| CN103165668B (en) * | 2011-12-19 | 2016-06-22 | Nxp股份有限公司 | Semiconductor device |
| US9425258B2 (en) | 2011-12-19 | 2016-08-23 | Nxp B.V. | Semiconductor device |
| CN105428410A (en) * | 2015-11-20 | 2016-03-23 | 成都嘉石科技有限公司 | GaN HEMT device with 2DEG recovery effect |
| CN105428410B (en) * | 2015-11-20 | 2018-03-02 | 成都海威华芯科技有限公司 | GaN HEMT devices with 2DEG recovery Effects |
| CN106941116A (en) * | 2016-01-05 | 2017-07-11 | 南京励盛半导体科技有限公司 | One kind nitridation Gallium base heterojunction semiconductor device structures |
| CN106653840A (en) * | 2016-11-15 | 2017-05-10 | 苏州捷芯威半导体有限公司 | Semiconductor device and manufacturing method thereof |
| WO2020007265A1 (en) * | 2018-07-02 | 2020-01-09 | Jin Wei | Nitride power device with cap regions and manufacturing method thereof |
| CN111707870A (en) * | 2020-06-24 | 2020-09-25 | 深港产学研基地（北京大学香港科技大学深圳研修院） | Method for extracting dynamic series resistance of GaN HEMT transistor |
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