CN101135772A - variable focal point micro-flat mirror driven by electrostatic and method of manufacturing the same - Google Patents
variable focal point micro-flat mirror driven by electrostatic and method of manufacturing the same Download PDFInfo
- Publication number
- CN101135772A CN101135772A CNA2007100469211A CN200710046921A CN101135772A CN 101135772 A CN101135772 A CN 101135772A CN A2007100469211 A CNA2007100469211 A CN A2007100469211A CN 200710046921 A CN200710046921 A CN 200710046921A CN 101135772 A CN101135772 A CN 101135772A
- Authority
- CN
- China
- Prior art keywords
- level crossing
- movable electrode
- electrode
- focal point
- variable focal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The flat mirror thereof comprises: a base; an annular electrode secured on the base; a Si baseboard; a mobile electrode; and a mirror surface of the flat mirror. Said annular electrode and Si-Au eutectic alloy bond can be combined to form a gap used for providing a deformation space for the mobile electrode; the mobile electrode is connected to the Si baseboard; when applying a voltage between the ring electrode and the mobile electrode, the generated normal electrostatic force can drive the mobile electrode to move in direction to the ring electrode so as to form a concave surface; the mirror surface of the flat mirror is mounted on the mobile electrode. The preparation method thereof comprises: 1)making the flat mirror; 2) making the base; 3)combining the annular electrode and the Si-Au eutectic allay bond of the mobile electrode.
Description
Technical field
The present invention relates to a kind of level crossing and manufacture method thereof of field of optical device technology, specifically is a kind of little level crossing of variable focal point and manufacture method thereof of static driven.
Background technology
Micro-Opto-Electro-Mechanical Systems (MOEMS) is an important research direction of MEMS (MEMS (micro electro mechanical system)) technology, and it is to be combined and a kind of novel micro-optical systems that produces by micro-optic, microelectronics and micromechanics.Micro-Opto-Electro-Mechanical Systems is a kind of controlled micro-optical systems, controls such as the micro optical element in this system can converge light beam under the effect of microelectronics and micro-mechanical device, diffraction, reflection, thus can finally realize functions such as photoswitch, decay, scanning and imaging.This system that micro optical element, microelectronics and micro-mechanical device are organically integrated, can give full play to three's combination property, not only can make optical system microminiaturized and reduce cost, and can realize autoregistration between optical element, the more important thing is that this combination also can produce new optical device and device.
Little level crossing is widely used in the adjustment and the control of light path, plays an important role in Micro-Opto-Electro-Mechanical Systems.Little level crossing among the MOEMS generally is to be substrate with gemel polysilicon flat board, and metal such as evaporation Cr-Au is made thereon.This micro-reflector can rotate around stationary shaft, can be used as the little driving mirror in the MOEMS devices such as photoswitch, photoscanner.Such as the reflective MEMS optical attenuator of micro mirror is exactly to utilize the miniature planar mirror to change the direction of folded light beam, thereby changes the luminous power in the coupling input-output optical fiber.This MEMS optical attenuator mainly is made up of little level crossing that input, output optical fibre, collimation lens and microdrive drive.
Find through retrieval existing technical literature, the patent of Samsung Electro-Mechanics Co., Ltd---" diffractive thin-film piezoelectric micromirror and manufacture method thereof ", China's application number 200410089738, this patent is the diffractive thin-film piezoelectric micromirror that belongs to the work of piezoelectric working mode, this diffractive thin-film piezoelectric micromirror comprises that forming recess on it thinks that its center provides the silicon substrate of air gap, and piezoelectricity specular layer with band shape, two ends at its two ends along recess adhere to silicon substrate, simultaneously the bottom of heart part and recess separates therein, but and comprises when voltage is applied to piezoelectric material layer heart part vertical moving therein and so thin films of piezoelectric material layer of diffraction incident beam.By analyzing this as can be seen little level crossing structure of utilizing the microdrive driving, cause the complexity of structural design to be unfavorable for regulating accurately fast controlling owing to being subjected to be not suitable for the little processing of array in the restriction of piezoelectric.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of little level crossing of variable focal point and manufacture method thereof of static driven is provided.The present invention only needs simply the size of the impressed voltage that applies by change just can reach the purpose of regulating little level crossing focus fast and accurately, ratio little level crossing structure in the past is simpler, easier array and zoom control, and it is low to have energy consumption, the characteristics that degree of accuracy is high.
The present invention is achieved by the following technical solutions:
The little level crossing of the variable focal point of the static driven that the present invention relates to comprises: ring electrode, Si substrate, movable electrode and the little level crossing minute surface fixed on base, the base.Wherein, base and Si substrate all are to use SOI materials processing, they are by Si-Au eutectic alloy bonding and form one movable electrode links to each other with the Si substrate for movable electrode provides the air gap in deformation space, and the design of fixing ring electrode can more help evenly accurate deformation.When between fixing ring electrode and movable electrode, applying the voltage that to regulate, the normal direction electrostatic force that produces can make movable electrode to following ring electrode direction motion, because the core generation deformation maximum of movable electrode, so form a concave surface, afterwards drive evaporation little level crossing minute surface thereon and become concave surface, the size of concave surface distortion and the size of electrostatic force have direct relation, and owing to electrostatic force is directly proportional for alive square with institute, so the focus of little level crossing (concave surface) can be regulated fast and accurately by the size of impressed voltage.The little level crossing of the variable focal point of static driven of the present invention is driven by normal direction electrostatic force.
The manufacture method of the little level crossing of variable focal point of the static driven that the present invention relates to specifically comprises the steps:
1. the manufacture craft of plane mirror section;
2. the manufacture craft of base portion;
3. the Si-Au eutectic alloy bonding of ring electrode and movable electrode.
The manufacture craft of described plane mirror section is specially: at first, be ready for the mask plate of photoetching treatment, utilize UV photoetching and developing technique that the mask plate structure pattern that designs is moved in the SOI of mask plate wafer surface.Secondly, with ICP-RIE (ion etching of induction coupling reaction) technology the thick silicon in the wafer is etched to SiO
2Layer.Then, utilize the etching of HF vapor etch technology to silicon dioxide among the SOI.Then, with ICP-RIE technology the structure silicon layer in the wafer is carried out etching.The last evaporation that carries out level crossing minute surface Al again forms movable electrode.
Mask plate in the manufacture craft of described plane mirror section, its mirror surface structure are by being Si substrate, SiO from top to bottom at one
2Process on SOI (silicon on the insulation course) wafer material of layer and structural sheet (Si layer).
The manufacture craft of described base portion is specially: at first, be ready for the mask plate of photoetching treatment, utilize UV photoetching and developing technique that the structure plan that designs is moved in the SOI of mask plate wafer surface.Secondly, be etched to SiO with ICP-RIE technology
2Layer.Then utilize the evaporation process of Al to form ring electrode equally in base central authorities.
Mask plate in the manufacture craft of described base portion, its base are by being structural sheet (Si layer), SiO from top to bottom at one
2Process on SOI (silicon on the insulation course) wafer material of layer and Si substrate.
Step 1. 2. technology be the technology of identical type in fact, material also is identical, different is respectively thick silicon and thin silicon to be carried out etching, helps the consistance of ring electrode and movable electrode like this for the structure of final formation, and is convenient to the array batch machining.
The Si-Au eutectic alloy bonding of described ring electrode and movable electrode is meant: the ring electrode and the movable electrode that process are passed through the little level crossing of variable focal point that Si-Au eutectic alloy bonding forms static driven.
The little level crossing of the variable focal point of the static driven that the present invention relates to, its principle are to utilize static driven power to drive movable electrode generation deformation to make the focus on little plane change.Whole process can be made by the little manufacture method of based semiconductor silicon materials fully, and " diffractive thin-film piezoelectric micromirror and manufacture method thereof " in the background technology is to utilize the piezoelectricity specular layer of piezoelectric making to carry out work, because the process technology limit of the material self of piezoelectric is unfavorable for the machine-shaping of array.The little level crossing that has utilized the static driven principle to produce among the present invention, be based on and process on a SOI (silicon on the insulation course) material, AM aluminum metallization is as specular layer on the silicon materials, technology realizes the easy array production that is beneficial to, and there is not an additional energy consumption, make the entire device good integrity, precision is higher.
Compare with background technology, the little level crossing of the present invention is the little level crossing of variable focal point of static driven, on material, structure and technology, all existing adjustable little level crossing is improved, only need simply the size of the impressed voltage that applies by change just can regulate little level crossing focus fast and accurately, ratio little level crossing structure in the past is simpler, easier array and zoom control.The present invention can be applied in the fields such as optical communication.
Description of drawings
Fig. 1 is the principle schematic of the little level crossing of variable focal point of static driven of the present invention
Fig. 2 is the structural representation of the little level crossing of variable focal point of static driven of the present invention
Fig. 3 is the manufacture method schematic flow sheet of the little level crossing of variable focal point of static driven of the present invention
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated: present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, the little level crossing of the variable focal point of the static driven in the present embodiment is driven by normal direction electrostatic force, and concrete structure comprises: base 1, the ring electrode of fixing on the base 2, Si substrate 3, five parts such as movable electrode 4 and little level crossing minute surface 5.Wherein, base 1 all is to use SOI materials processing with Si substrate 3, they are by Si-Au eutectic alloy bonding and form one movable electrode 4 links to each other with Si substrate 3 for movable electrode 4 provides the air gap in deformation space, and the design of fixing ring electrode 2 can more help evenly accurate deformation.When fixing ring electrode 2 and 4 of movable electrodes apply the voltage that can regulate, the normal direction electrostatic force that produces can make movable electrode 4 move to following ring electrode 2 directions, because the core generation deformation maximum of movable electrode 4, so form a concave surface, afterwards drive evaporation little level crossing minute surface thereon and become concave surface, the size of concave surface distortion and the size of electrostatic force have direct relation, and owing to electrostatic force is directly proportional for alive square with institute, so the focus of little level crossing (concave surface) can be regulated fast and accurately by the size of impressed voltage.
As shown in Figure 3, the manufacture method of the little level crossing of variable focal point of static driven is divided into 3 sub-technologies: the Si-Au eutectic alloy bonding of the manufacture craft of plane mirror section, the manufacture craft of base portion, ring electrode and movable electrode.
The manufacture craft of plane mirror section is: mirror surface structure is processed on a SOI (silicon on the insulation course) material, and this SOI wafer is formed by three layers, is respectively the Si substrate of 400um from top to bottom, the SiO2 layer of 1um and the structural sheet of 10um (Si layer).At first, design the mask plate that is used for photoetching treatment, utilize UV photoetching and developing technique that the structure plan that designs is moved in the SOI wafer surface.Secondly, with ICP-RIE technology the thick silicon in the wafer is etched to the SiO at 400um place
2Layer then, utilizes the etching of HF vapor etch technology to silicon dioxide among the SOI, then, with ICP-RIE technology the structure silicon layer in the wafer is carried out etching, carries out the evaporation of level crossing minute surface Al at last again, forms movable electrode.
The manufacture craft of base portion is: base is also processed on a SOI (silicon on the insulation course) material, and this SOI wafer is formed by three layers, is respectively the structural sheet (Si layer) of 18um from top to bottom, the SiO of 1um
2The Si substrate of layer and 400um.At first, design the mask plate that is used for photoetching treatment, utilize UV photoetching and developing technique that the structure plan that designs is moved in the SOI wafer surface.Secondly, be etched to the SiO at 18um place with ICP-RIE technology
2Layer.Then utilize the evaporation process of Al to form ring electrode equally in base central authorities.
The Si-Au eutectic alloy bonding of ring electrode and movable electrode: the ring electrode that processes and movable electrode are formed designed static driven by Si-Au eutectic alloy bonding the little level crossing of variable focal point.
The single micro mirror planar structure that the present invention makes is of a size of 15*15mm
2, minute surface diameter 10mm, when being added in voltage between ring electrode and the movable electrode when 50V is increased to 300V, the radius-of-curvature of little level crossing can become 50um from 1000um, is fit to regulate accurately fast; And, be very suitable for the micro mirror array of integrated making different scales based on the job operation of silicon technology.In a word, this micro mirror only needs simply the size of the impressed voltage that applies by change just can regulate little level crossing focus fast and accurately, and simpler than in the past little level crossing structure, easier array and zoom are controlled.
Claims (5)
1. the little level crossing of the variable focal point of a static driven, comprise: base, the ring electrode of fixing on the base, the Si substrate, movable electrode and little level crossing minute surface, it is characterized in that, ring electrode and movable electrode are by Si-Au eutectic alloy bonding and form an air gap that the deformation space is provided for movable electrode, movable electrode links to each other with the Si substrate, when applying voltage between fixing ring electrode and the movable electrode, the normal direction electrostatic force that produces drives movable electrode and forms a concave surface to following ring electrode direction motion, and little level crossing minute surface is arranged on the movable electrode.
2. the little level crossing of the variable focal point of static driven according to claim 1 is characterized in that, described concave surface, and its focus is by the size adjustment of impressed voltage.
3. the little level crossing manufacture method of the variable focal point of a static driven is characterized in that, specifically comprises the steps:
1. the manufacture craft of plane mirror section;
2. the manufacture craft of base portion;
3. the Si-Au eutectic alloy bonding of ring electrode and movable electrode;
The manufacture craft of described plane mirror section is: at first, be ready for the mask plate of photoetching treatment, utilize UV photoetching and developing technique that the structure plan that designs is moved in the SOI of mask plate wafer surface, secondly, with induction coupling reaction ion etching technology the thick silicon in the wafer is carried out etching, then, etching to silicon dioxide among the SOI, then, with induction coupling reaction ion etching technology the structure silicon layer in the wafer is carried out etching, the last evaporation that carries out level crossing minute surface Al again forms movable electrode;
The manufacture craft of described base portion is: at first, be ready for the mask plate of photoetching treatment, utilize UV photoetching and developing technique that the structure plan that designs is moved in the SOI of mask plate wafer surface, secondly, be etched to the SiO at 18um place with induction coupling reaction ion etching technology
2Layer then utilizes the evaporation process of Al to form ring electrode in base central authorities equally;
The Si-Au eutectic alloy bonding of described ring electrode and movable electrode: the ring electrode and the movable electrode that process are passed through the little level crossing of variable focal point that Si-Au eutectic alloy bonding forms static driven.
4. the manufacture method of the little level crossing of variable focal point of static driven according to claim 3 is characterized in that, the mask plate in the manufacture craft of described plane mirror section, its mirror surface structure are by being Si substrate, SiO from top to bottom at one
2Process on the SOI wafer material of layer and structural sheet.
5. the manufacture method of the little level crossing of variable focal point of static driven according to claim 3 is characterized in that, the mask plate in the manufacture craft of described base portion, its base are by being structural sheet, SiO from top to bottom at one
2Process on the SOI wafer material of layer and Si substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100469211A CN100570430C (en) | 2007-10-11 | 2007-10-11 | Little level crossing of the variable focal point of static driven and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100469211A CN100570430C (en) | 2007-10-11 | 2007-10-11 | Little level crossing of the variable focal point of static driven and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101135772A true CN101135772A (en) | 2008-03-05 |
| CN100570430C CN100570430C (en) | 2009-12-16 |
Family
ID=39159941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100469211A Expired - Fee Related CN100570430C (en) | 2007-10-11 | 2007-10-11 | Little level crossing of the variable focal point of static driven and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100570430C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105022163A (en) * | 2015-07-27 | 2015-11-04 | 宁波大学 | Focal length-adjustable reflector |
| CN105676448A (en) * | 2016-04-14 | 2016-06-15 | 成都信息工程大学 | Focusing micro-mirror and focusing device |
| CN107436539A (en) * | 2016-05-25 | 2017-12-05 | 佳能株式会社 | The manufacture method of exposure device and article |
-
2007
- 2007-10-11 CN CNB2007100469211A patent/CN100570430C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105022163A (en) * | 2015-07-27 | 2015-11-04 | 宁波大学 | Focal length-adjustable reflector |
| CN105676448A (en) * | 2016-04-14 | 2016-06-15 | 成都信息工程大学 | Focusing micro-mirror and focusing device |
| CN105676448B (en) * | 2016-04-14 | 2018-12-11 | 成都信息工程大学 | A kind of focusing micro mirror and a kind of focus control |
| CN107436539A (en) * | 2016-05-25 | 2017-12-05 | 佳能株式会社 | The manufacture method of exposure device and article |
| CN107436539B (en) * | 2016-05-25 | 2023-09-22 | 佳能株式会社 | Exposure apparatus and method for manufacturing article |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100570430C (en) | 2009-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100587547C (en) | Piezo-electricity driven deformable reflector and manufacturing method thereof | |
| Vdovin et al. | Technology and applications of micromachined silicon adaptive mirrors | |
| US7369723B1 (en) | High speed piezoelectric optical system with tunable focal length | |
| CN111538154B (en) | Electrostatic driven MEMS micro-mirror array and preparation method thereof | |
| Michael et al. | Piezoelectric micro-lens actuator | |
| TW201323315A (en) | Method for manufacturing spatial light modulation element, spatial light modulation element, spatial light modulator and exposure apparatus | |
| JP2002162663A (en) | Camera movements device for lens | |
| CN100570430C (en) | Little level crossing of the variable focal point of static driven and manufacture method thereof | |
| CN101937128A (en) | MEMS micro-lens driven by three piezoelectric cantilever beams and manufacturing method thereof | |
| CN111204701A (en) | Micromirror with fully-symmetrical differential capacitor angle feedback | |
| CN101549848A (en) | Method for fabricating large angle turning micro mirror driver | |
| JP2008233405A (en) | Variable curvature mirror device and manufacturing method thereof | |
| Lee et al. | SOI-based fabrication processes of the scanning mirror having vertical comb fingers | |
| CN103901609B (en) | The MEMS movable blazed grating optical modulator driving based on double-deck broach | |
| US6704132B2 (en) | Micromirror truss structure and fabrication method | |
| CN105022163B (en) | A kind of speculum of adjustable focal length | |
| CN203643683U (en) | MEMS micro-mirror chip capable of double-axial rotation | |
| Lapisa et al. | CMOS-integrable piston-type micro-mirror array for adaptive optics made of mono-crystalline silicon using 3-D integration | |
| US20190235230A1 (en) | Optical system with deformable mems optical element | |
| Milanovic et al. | Monolithic vertical combdrive actuators for adaptive optics | |
| CN114408854A (en) | Two-dimensional micromechanical bidirectional torsion mirror array and manufacturing method thereof | |
| CN115480358A (en) | Deformable reflector based on ultrasonic resonance driving | |
| CN103744178A (en) | Dual-axis rotatable MEMS (micro-electromechanical system) microscope chip | |
| KR20040072406A (en) | Tunable optical resonator and tunable optical filter using the same | |
| JP2002311213A (en) | Variable shape optical element and optical element unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091216 Termination date: 20121011 |