CN101549848A - Method for fabricating large angle turning micro mirror driver - Google Patents
Method for fabricating large angle turning micro mirror driver Download PDFInfo
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- CN101549848A CN101549848A CNA2009100510022A CN200910051002A CN101549848A CN 101549848 A CN101549848 A CN 101549848A CN A2009100510022 A CNA2009100510022 A CN A2009100510022A CN 200910051002 A CN200910051002 A CN 200910051002A CN 101549848 A CN101549848 A CN 101549848A
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Abstract
The invention relates to a method for fabricating large angle turning micro mirror driver, which is characterized in that: 1, fabricating an inclined silicon surface (2) and an inclined silicon surface (3) with a inclination angle on an inclined crystal orientation silicon chip (1); 2, fabricating a lower electrode of driver on the inclined silicon surface (2); 3, fabricating a isolation space between the upper and lower electrode of a turning micro mirror driver on the surface of another silicon chip; 4, performing disk level bonding process to the two silicon chips to obtain a whole bonded piece, and performing surface integral thinning to the bonded piece to obtain the final device layer; 5, fabricating the two end fixed supporting beams of the turning mirror driver, the electrodes on the driver and the turning micro mirror on the final device layer; 6, dividing the whole silicon chip to obtain single turning mirror drivers. By adopting inclined electrodes, the fabricated driver can realize large angle micro mirror turning under the condition that the driving voltage is reduced.
Description
Technical field
The present invention relates to a kind of driver preparation method of MEMS, refer more particularly to a kind of micromechanics method for fabricating large angle turning micro mirror driver.Belong to photoelectron communication device field.
Background technology
MEMS (MEMS) is based on an emerge science technology of multidisciplinary intersections such as collection machinery that Micrometer-Nanometer Processing Technology grows up, electronics, continuous fast development along with micro electro mechanical system (MEMS) technology, the optics of making based on micro electro mechanical system (MEMS) technology also is widely used, be extensive use of transmission and the demonstration of micro-mirror surface with the control optical signal in fields such as optic communication, light demonstrations, for example mems optical switch, optical attenuator, optical scanner, DMD display etc., wherein micro mirror driver is its core component.
Existing micro mirror driver mainly is divided into translation micro mirror driver and rotational micromirror face driver by motion mode.In the translation micro mirror driver, the micromirror motion mode adopts translation mode, the normal direction of micro mirror is constant in the motion process, because the translation micromirror is usually perpendicular to the chip plane, thereby adopt silicon to lose manufacture craft deeply usually, cause the minute surface roughness big, the response time of device is also longer simultaneously.The structure of translation micro mirror driver and micromirror size have determined input-output optical fiber and translation micro mirror driver need carry out the optics encapsulation in the isoplanar, finally cause the big and aligning coupling difficulty of encapsulating structure, device poor optical properties (Fig. 1～3).The rotational micromirror face driver adopts the motion of electrostatic torsion micromirror usually, and the normal of micro mirror rotates in the space, and easy and micro-optical systems coupling realizes that the passage of input-output optical fiber switches.The making of torsion mirror driver mainly utilizes surface micromachined technology and body micromachined technology, surface micromachined technological requirement height wherein, and complex process, with high costs, as be applied to the DMD (DMD) that light shows.The torsion mirror that body micromachined technology is made can not too highly cause windup-degree lower owing to be limited to driving voltage, usually have only the several years at zero point, can't need the situation of large angle torsion angle (several years to tens degree) to use at some as mems optical switch, obtain big windup-degree and finally cause driving voltage too high by the method that improves driving voltage, increase the difficulty and the cost of drive circuit greatly.At the existing problem that exists based on the micro mirror driver of MEMS making, consider to need in the optic communication to use the micro mirror driver of big windup-degree simultaneously, therefore the present invention proposes the preparation method that a kind of response time is short, driving voltage is low, the large angle torsion mirror face of manufacture craft simple possible drives.
Summary of the invention
The objective of the invention is to propose a kind of under the condition that low voltage drives, can produce the torsion mirror face driver preparation method of wide-angle variations.
The preparation method of a kind of large angle torsion mirror driver of the present invention mainly comprises: at first tiltedly utilizing potassium hydroxide (KOH) etchant solution to produce inclination silicon face 2 and the inclination silicon face 3 with certain angle of inclination on the crystal orientation silicon chip 1, make the bottom electrode 4 of driver then on inclination silicon face 2.Then produce the top electrode and the insulating space 6 of bottom electrode that reverses mirror driver at another piece silicon chip surface 5, the space of reversing of mirror driver is reversed in assurance.Allow two silicon chips carry out the bonding technology of wafer level then, obtain complete bonding pad.Bonding pad is carried out whole attenuate to surface 7, obtain final devices layer 8.The last fixing brace summer 9 in the two ends of reversing mirror driver, the top electrode 11 and the torsion mirror face 12 of driver produced on device layer 8 made golden film or aluminium film 13, simultaneously to improve the reflectivity of optical signal on micromirror.Whole silicon wafer is carried out obtaining single large angle torsion mirror driver after the scribing, apply certain voltage at the bottom electrode 4 and the top electrode 11 of driver, micromirror will be reversed corresponding angle.
Specific implementation step of the present invention is as follows:
1. growth layer of silicon dioxide film on oblique crystal orientation silicon chip.
2. utilize the zone that photoetching, development and silicon dioxide etching technology expose needs to make inclined electrode.
3. use silica as mask layer, silicon chip is put into potassium hydroxide solution carry out silicon anisotropic etching, obtain to have the inclination silicon face at certain angle of inclination.
4. utilize sputtering technology sputter layer of metal bottom electrode on the inclination silicon face of silicon chip.
5. utilize photoetching, development and aluminium etching process on metallic film, to erode away required bottom electrode figure.
6. growth layer of silicon dioxide film on another piece silicon chip.
7. utilize photoetching, development and silicon dioxide etching technology to expose the top electrode of needs making and the zone of bottom electrode insulating space.
8. use silica as mask layer, silicon chip is put into potassium hydroxide solution carry out silicon anisotropic etching, obtain top electrode and the bottom electrode insulating space of several microns to several each and every one microns.
9. utilize silicon dioxide etching technology to remove remaining silica film on the silicon chip.
10. utilize bonding technology that two wafer bondings of making figure are become a monoblock bonding pad.
Carry out whole attenuate 11. bonding pad is put into a side of potassium hydroxide etchant solution para-linkage sheet, make to keep tens microns left and right sides device layers on the silicon chip in oblique crystal orientation.
12. sputter one deck gold thin film on device layer, the golden reflecting layer of adopting photoetching, golden etching process to produce minute surface.
13. on the device layer behind the attenuate, produce the required fixing thin beam figure that reverses mirror driver, top electrode and two ends by photoetching, development.Utilize plasma silicon deep etching process etching break-through silicon wafer devices layer again, the thin beam structure that the torsion mirror face that obtains separating, top electrode and two ends are fixing.
14. being carried out scribing, whole silicon wafer obtains single electrostatic actuator.
The silicon chip in the oblique crystal orientation of described employing, can obtain having two crystal orientation faces at certain angle of inclination behind its process KOH solution corrosion, device drive voltage can be reduced in one of them inclined plane, an inclined plane can prevent the driving voltage overload, and required angle of inclination can be obtained by the method difference of silicon chip cutting;
The described bottom electrode of making driver on the inclination silicon face can be to make metal electrode, as aluminium or gold electrode, also can mix on silicon chip and make diffusion electrode;
Described another piece silicon chip comprises common silicon chip or SOI (silicon on the insulating barrier) silicon chip;
Described silicon chip utilizes the layer of silicon dioxide film as the corrosion mask layer, utilize the photoetching process in the MEMS technology on silica membrane, to produce required figure, make the silicon chip back side in potassium hydroxide solution, erode away certain depth then, guarantee that top electrode and bottom electrode that static drives have the certain intervals space; Also can be with silicon nitride film as etching mask, etchant solution also can use TMAH etc. can corrode the anisotropic etchant of silicon; Top electrode that erodes away and bottom electrode clearance space can for several micron to tens microns;
Described two silicon chips carry out the bonding technology of wafer level, the bonding pad that two silicon chips are become one; Side on the para-linkage sheet is carried out whole attenuate then, and tiltedly crystal orientation silicon chip one side adopts silica or silicon nitride film to protect, and is not corroded; Thining method can preferentially be selected the potassium hydroxide corroding method for use, and the method that also can the using plasma silicon etching or the method for chemically mechanical polishing are carried out wafer thinning; Bonding pad is through behind the silicon materials attenuates, and the silicon face after can using chemically mechanical polishing to attenuate according to the silicon face situation carries out surface finish to be handled; On the silicon wafer devices layer behind the attenuate, utilize photoetching process to produce and reverse the torsion beam position of mirror driver needs, the top electrode position and the torsion mirror face position of driver, utilize pecvd silicon to lose (DRIE) technology deeply then the break-through of silicon wafer devices layer etching, obtain required torsion mirror face, the top electrode of driver and fixing two thin beams of top electrode and torsion mirror face.Utilizing before DRIE technology etching obtains required torsion mirror face driver, can utilize photoetching, the gold thin film of reversing mirror driver part sputter last layer increase light reflection efficiency of sputtering technology on the silicon wafer devices layer also can be other metallic reflection film such as aluminium film.And then utilize DRIE technology to etch required torsion mirror face, driver top electrode and two torsion beam;
After silicon chip carried out scribing, obtain single electrostatic actuator; Need apply voltage at the top electrode and the bottom electrode of driver, the micromirror of torsion mirror face driver is torqued into and the corresponding certain angle of institute's making alive, and the voltage that applies is adjustable continuously to the hundreds of volt at several volts.The angle of being reversed can be adjustable to the tens degree scopes at 1 degree.
A kind of method for fabricating large angle turning micro mirror driver provided by the invention, utilize photoetching, burn into bonding, sputter and plasma silicon deep etching technology among the MEMS to make a kind of technology simple possible, utilize the accurate driving of static, the micro mirror driver that driving voltage is low, windup-degree is big.The driver of made can realize reversing of wide-angle micromirror, and the angle of reversing be adjustable continuously owing to adopted inclined electrode under the situation that reduces driving voltage.
Description of drawings
Fig. 1 is the light-keeping-off type optical switch chip schematic diagram of existing control light barrier motion, and 31 is movable micromirror among the figure, and 32 are the optical fiber of optical signal input with output.
Fig. 2 drives the light-keeping-off type optical switch chip schematic diagram that the control light barrier moves for existing broach, and 33 for driving the comb drive of micromirror among the figure, and 34 for being movable micromirror, and 35 is the etching groove of placing optical fiber.
The light-keeping-off type photoswitch schematic diagram that Fig. 3 makes for existing incline structure, 36 for supporting the micro-cantilever of minute surface among the figure, and 37 for placing the etching groove of optical fiber, and 38 is vertical micro-mirror surface.
Fig. 4 is a wide-angle micro mirror driver side view provided by the invention, 1 is oblique crystal orientation silicon chip among the figure, and 2 are the inclination silicon face, and 3 are the inclination silicon face, 4 is bottom electrode, 6 is the insulating space of top electrode and bottom electrode, and 8 is device layer, and 9 for supporting torsion beam, 11 is top electrode, 12 is micro-mirror surface, and 13 is golden reflective film, 14 silicon dioxide layers for insulation.
Fig. 5 is the manufacturing process schematic diagram of driver shown in Figure 4.
Wherein, A is selected oblique crystal orientation silicon chip, and B is the SiO in the silicon chip surface growth of oblique crystal orientation
2Film, the inclination silicon face that C comes out for the KOH solution corrosion, D are the bottom electrode of making driver on the inclination silicon face, and E is another selected piece silicon chip, and F is at two superficial growth SiO of another piece silicon chip
2Film, G is for to erode away top electrode and bottom electrode insulating space zone at another silicon chip lower surface, H is two wafer bondings of step D and step G, I remains device layer behind another piece wafer thinning behind the step H bonding, J makes driver top electrode and golden film on device layer, K reverses minute surface and silicon dioxide insulating layer for what make driver on device layer.
The specific embodiment
Binding time 5, by the description of following specific embodiment, with further elaboration substantive distinguishing features of the present invention and obvious improvement, but the present invention only limits to the description of embodiment absolutely not.
The preparation method of described a kind of large angle torsion mirror face driver, concrete steps are:
A) for depart from the crystal orientation＜utilize potassium hydroxide (KOH) etchant solution to produce silicon face 2 and the silicon face 3 that has certain angle of inclination with former silicon chip surface on the oblique crystal orientation silicon chip 1 of 111〉crystal orientation certain angles, it specifically is characterized as: 1. at first going up oxidation one layer thickness at the oblique silicon chip (5A) in crystal orientation is the silica (SiO of several thousand dusts
2) layer as protective layer (5B), utilize photoetching process to expose SiO then
2Need the zone of corrosion, then use SiO
2The SiO that remove to expose of corrosive liquid
2, at last silicon chip is put into KOH solution and carried out anisotropic etch, obtain silicon face 2 and inclination silicon face 3 (5C), its medium dip silicon face 2 can be used for reducing driving voltage, and inclination silicon face 3 can be used for preventing the driving voltage overload.
B) bottom electrode 4 (5D) of making driver on inclination silicon face 2; specifically be characterized as: utilize sputtering equipment with aluminium or golden metal sputtering to whole oblique crystal orientation silicon chip with inclined surface; define the zone that needs electrode with photoetching process then; and with photoresist as protective layer; silicon chip is put into this kind metal erosion liquid; corrode the metal in unnecessary zone, remove photomask surface glue at last and promptly obtain required bottom electrode zone.
C) for produce the top electrode that reverses mirror driver and the insulating space 6 (5G) of bottom electrode at another piece silicon chip surface 5; Specific features is: initial oxidation a layer thickness is that the silica membrane of several thousand dusts is as the mask layer of silicon corrosion on another piece silicon chip; Utilize the photoetching process in the MEMS technology to produce required figure at silica membrane; Carry out then the corrosion of SiO2 layer; Expose the silicon face that needs corrosion; Silicon chip is put into potassium hydroxide solution corrode certain depth; Guarantee that quiet electrically driven (operated) top electrode and bottom electrode have the certain intervals space
D) above-mentioned steps (a) and (b) and described two silicon chips of step (c) are carried out the bonding technology of wafer level, obtain complete bonding pad.It further is characterized as: the bonding (5H) that carries out wafer level after utilizing the bonding machine to allow image on two silicon chips aim at up and down;
E) whole attenuate is carried out on the surface 7 (5H) of steps d bonding pad, obtains final devices layer 8 (5I), specifically is characterized as: with a side SiO of oblique crystal orientation silicon chip
2Layer or silicon nitride film are protected, and a side on the surface 7 of bonding pad is come out, and then the bonding silicon chip are put into KOH solution and carry out reduction processing.After being thinned to the needed thickness of device silicon chip is taken out.The silicon thining method can preferentially be selected the potassium hydroxide corroding method for use, method that also can the using plasma silicon etching, and perhaps the method for chemically mechanical polishing is carried out wafer thinning; Silicon chip perhaps behind the method attenuate of chemically mechanical polishing, can use chemically mechanical polishing that last silicon wafer devices layer is carried out surface finish, to produce silicon device layer surface preferably through potassium hydroxide corrosion thinning or plasma silicon etching.
F) on device layer 8, producing the fixing brace summer 9 (not marking among the figure) in the two ends of reversing mirror driver, the top electrode 11 and the torsion mirror face 12 of driver, on micromirror, make simultaneously golden film 13 (5J) and (5K), with the reflectivity of raising optical signal.Specifically be characterized as: on the silicon wafer devices layer 8 behind the attenuate, utilize photoetching process to produce and reverse the torsion beam position of mirror driver needs, the top electrode position and the torsion mirror face position of driver, utilize pecvd silicon to lose (DRIE) technology deeply then the break-through of silicon wafer devices layer etching, obtain required torsion mirror face, the top electrode of driver and fixing two torsion beam of top electrode and torsion mirror face.Utilizing DRIE technology etching to obtain the required mirror driver that reverses, before driver top electrode and the torsion beam, can utilize photoetching, the gold thin film or the aluminium film that reverse mirror driver part sputter last layer increase light reflection efficiency of sputtering technology on the silicon wafer devices layer, at last utilize DRIE technology to etch required torsion mirror face again, driver top electrode and two torsion beam;
G) carry out obtaining the torsion mirror face driver that is used for photoswitch that single static drives after the scribing for silicon chip, concrete feature is: after need carrying out scribing to silicon chip, just can obtain single electrostatic actuator.
Apply certain voltage for bottom electrode 4 and top electrode 11 at driver, micromirror will be reversed corresponding angle, specifically be characterized as: need apply voltage at the top electrode and the bottom electrode of driver, the micromirror of torsion mirror face driver just can be reversed certain angle, the voltage that applies is adjustable, can be at several volts to the hundreds of volt.
It is emphasized that it all only is to attempt to provide general introduction or framework to be used to understand the present invention's characteristic and feature as claimed in claim that above general description and embodiments of the invention are described in detail.Included accompanying drawing all is used to provide the present invention is further understood, and forms the part of specification.Description of drawings various features of the present invention and embodiment, it and describe one and be used from and explain making new method of the present invention and embodiment.
Claims (10)
1, a kind of preparation method of large angle torsion mirror driver, the inclination silicon face (2) and the inclination silicon face (3) that it is characterized in that 1. at first on oblique crystal orientation silicon chip (1), utilizing the potassium hydroxide etchant solution to produce and have certain angle of inclination; 2. go up the bottom electrode of making driver at inclination silicon face (2) then; 3. then produce the top electrode that reverses mirror driver and the insulating space of bottom electrode on the surface of another piece silicon chip; 4. two silicon chips carry out the bonding technology of wafer level, obtain complete bonding pad, and whole attenuate is carried out on the surface of para-linkage sheet again, obtains the final devices layer; 5. on the device layer behind the attenuate, produce at last the fixing brace summer in the two ends of reversing mirror driver, the top electrode and the torsion mirror face of driver; 6. whole silicon wafer is carried out obtaining single large angle torsion mirror driver after the scribing.
2, press the preparation method of the described a kind of large angle torsion mirror face driver of claim 1, it is characterized in that an inclination silicon face in two crystal orientation faces at described certain angle of inclination reduces device drive voltage, another inclination silicon face prevents the driving voltage overload; Described angle of inclination is obtained by the method difference of silicon chip cutting.
3, by the preparation method of the described a kind of large angle torsion mirror face driver of claim 1, it is characterized in that the driver bottom electrode of making is aluminium or golden metal electrode on the inclination silicon face, or be the diffusion electrode that on silicon chip, mixes and make.
4, by the preparation method of the described a kind of large angle torsion mirror face driver of claim 1, it is characterized in that described another piece silicon chip is the silicon chip on common silicon chip and the insulating barrier.
5, press the preparation method of claim 1 or 4 described a kind of large angle torsion mirror face drivers, it is characterized in that described another piece silicon chip utilizes silica membrane or silicon nitride film as the corrosion mask layer, utilize the photoetching process in the MEMS technology on silica membrane, to produce required figure, make the silicon chip back side in potassium hydroxide solution or in the anisotropic corrosive liquid of TMAH, erode away certain depth then, guarantee that top electrode and bottom electrode that static drives have the certain intervals space; And described top electrode and bottom electrode clearance space can for several micron to tens microns.
6, by the preparation method of the described a kind of large angle torsion mirror face driver of claim 1, the bonding that it is characterized in that described two silicon chips is the bonding technology that adopts two wafer levels, the bonding pad that two silicon chips are become one.
7, by the preparation method of the described a kind of large angle torsion mirror face driver of claim 1, it is characterized in that carrying out whole attenuate for the side on the bonding pad, tiltedly crystal orientation silicon chip one side adopts silica or silicon nitride film to protect, and is not corroded; Thining method selects for use the method for potassium hydroxide corroding method, plasma silicon etching or the method for chemically mechanical polishing to carry out wafer thinning; The surface of the bonding pad after using cmp method to attenuate is carried out surface finish and is handled.
8, press the preparation method of the described a kind of large angle torsion mirror face driver of claim 1, it is characterized in that on the silicon wafer devices layer behind the attenuate, utilize photoetching process to produce to reverse after the top electrode position and torsion mirror face position of torsion beam position that mirror driver needs, driver, utilize the plasma silicon deep etching process with the break-through of silicon wafer devices layer etching, obtain required torsion mirror face, the top electrode of driver and fixing two thin beams of top electrode and torsion mirror face.
9, press the preparation method of the described a kind of large angle torsion mirror face driver of claim 1, it is characterized in that: utilizing before plasma silicon deep etching process etching obtains required torsion mirror face driver, utilize photoetching, the gold thin film or the aluminium film that reverse mirror driver part sputter last layer increase light reflection efficiency of sputtering technology on the silicon wafer devices layer; And then utilize DRIE technology to etch required torsion mirror face, driver top electrode and two torsion beam.
10, press the preparation method of the described a kind of large angle torsion mirror face driver of claim 1, the micromirror that it is characterized in that the driver made is torqued into and the corresponding angle of institute's making alive, the voltage that applies be tens volts adjustable continuously to several hectovolts, windup-degree be 1 spend in the tens degree scopes adjustable.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102981271A (en) * | 2012-11-16 | 2013-03-20 | 中国科学院光电技术研究所 | Manufacturing method of electrostatic driving MEMS deformable mirror with large-stroke structure |
| CN105712288A (en) * | 2014-12-02 | 2016-06-29 | 无锡华润上华半导体有限公司 | Manufacturing method of MEMS rotary static driver |
| CN105712290A (en) * | 2014-12-04 | 2016-06-29 | 无锡华润上华半导体有限公司 | Production method of MEMS (Micro Electro Mechanical Systems) electrostatic driver |
| CN110217754A (en) * | 2019-06-12 | 2019-09-10 | 上海芯物科技有限公司 | A kind of rotational structure and preparation method thereof |
| CN111217321A (en) * | 2020-01-17 | 2020-06-02 | 上海芯物科技有限公司 | Preparation method of rotating structure and rotating structure |
| CN111232913A (en) * | 2020-01-17 | 2020-06-05 | 上海芯物科技有限公司 | Preparation method of rotating structure and rotating structure |
| CN111232917A (en) * | 2020-01-17 | 2020-06-05 | 上海芯物科技有限公司 | Preparation method of rotating structure and rotating structure |
| CN113031251A (en) * | 2019-12-09 | 2021-06-25 | 觉芯电子(无锡)有限公司 | Electrostatic driving type micromirror and manufacturing method thereof |
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2009
- 2009-05-12 CN CNA2009100510022A patent/CN101549848A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102981271A (en) * | 2012-11-16 | 2013-03-20 | 中国科学院光电技术研究所 | Manufacturing method of electrostatic driving MEMS deformable mirror with large-stroke structure |
| CN105712288A (en) * | 2014-12-02 | 2016-06-29 | 无锡华润上华半导体有限公司 | Manufacturing method of MEMS rotary static driver |
| CN105712288B (en) * | 2014-12-02 | 2017-10-27 | 无锡华润上华半导体有限公司 | The preparation method of MEMS torsional mode electrostatic actuators |
| US9834437B2 (en) | 2014-12-02 | 2017-12-05 | Csmc Technologies Fabi Co., Ltd. | Method for manufacturing MEMS torsional electrostatic actuator |
| CN105712290A (en) * | 2014-12-04 | 2016-06-29 | 无锡华润上华半导体有限公司 | Production method of MEMS (Micro Electro Mechanical Systems) electrostatic driver |
| CN105712290B (en) * | 2014-12-04 | 2017-09-29 | 无锡华润上华半导体有限公司 | The preparation method of MEMS electrostatic actuators |
| CN110217754A (en) * | 2019-06-12 | 2019-09-10 | 上海芯物科技有限公司 | A kind of rotational structure and preparation method thereof |
| CN113031251A (en) * | 2019-12-09 | 2021-06-25 | 觉芯电子(无锡)有限公司 | Electrostatic driving type micromirror and manufacturing method thereof |
| CN113031251B (en) * | 2019-12-09 | 2024-03-26 | 觉芯电子(无锡)有限公司 | Electrostatic driving type micro-mirror and manufacturing method thereof |
| CN111217321A (en) * | 2020-01-17 | 2020-06-02 | 上海芯物科技有限公司 | Preparation method of rotating structure and rotating structure |
| CN111232913A (en) * | 2020-01-17 | 2020-06-05 | 上海芯物科技有限公司 | Preparation method of rotating structure and rotating structure |
| CN111232917A (en) * | 2020-01-17 | 2020-06-05 | 上海芯物科技有限公司 | Preparation method of rotating structure and rotating structure |
| CN111232917B (en) * | 2020-01-17 | 2020-12-11 | 上海芯物科技有限公司 | Preparation method of rotating structure and rotating structure |
| CN111232913B (en) * | 2020-01-17 | 2020-12-18 | 上海芯物科技有限公司 | Preparation method of rotating structure and rotating structure |
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