CN101132020B - Organic light emitting device - Google Patents
Organic light emitting device Download PDFInfo
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- CN101132020B CN101132020B CN200710147726.8A CN200710147726A CN101132020B CN 101132020 B CN101132020 B CN 101132020B CN 200710147726 A CN200710147726 A CN 200710147726A CN 101132020 B CN101132020 B CN 101132020B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
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Abstract
An organic light emitting device includes a plurality of colored pixels, and a white pixel, wherein the respective pixels include; a first electrode, a second electrode which faces the first electrode, and a light emitting member disposed between the first electrode and the second electrode, and the white pixel further includes; a first semi-transparent member disposed on the first electrode to form a microcavity with the second electrode.
Description
The application requires the 10-2006-0080847 korean patent application of submitting on August 25th, 2006 and the priority of 10-2006-0098742 korean patent application of submitting on October 11st, 2006, and its content is contained in this by reference completely.
Technical field
The present invention relates to a kind of organic light emitting apparatus.
Background technology
Recently, the display part that every expectation is lighter and/or thinner, liquid crystal display (LCD) is just replacing cathode ray tube (CRT).
But there are a lot of problems in LCD.Problem is that LCD needs the independent elements that are used as launch and receiving light backlight, and in addition, the response speed of LCD slowly and narrow viewing angle.
Recently,, as the display unit addressing these problems, organic light emitting apparatus (OLED) becomes and gets most of the attention.
OLED comprises that two electrodes and emission layer are placed between these two electrodes.In OLED, from an electrode injection electronics, from another electrode injection hole, electronics and hole are compound to form exciton in emission layer.It is luminous in the time that exciton releases energy.
Because OLED is the spontaneous emission escope that does not need independent light source, therefore OLED have advantages of low in energy consumption, response speed good, visual angle is wide and good contrast.
OLED comprises multiple pixels (comprising such as red pixel, blue pixel and green pixel), and can show by the light of these pixel transmittings is combined to produce full color.In one arrangement, the luminescent layer that the each utilization in the pixel of different colours is made up of different materials produces the utilizing emitted light (therefore utilizing emitted light has different colours) of different wave length.
Selectively, OLED can comprise the pixel of each pixel transmitting white.A method of producing this pixel is to comprise redness, blueness and green light emitting layer, therefore transmitting white in single pixel.In this optional structure, must increase the additional color-filter layer with redness, blueness and green component, to produce colored demonstration.
But according to the luminescent material of the pixel for the production of different colours, OLED has different luminous efficiencies.In other words,, in the pixel of each different colours, the voltage of the same amount applying can produce the utilizing emitted light of different amounts.In this case, in redness, green and blueness, the color that emission effciency is low does not have predetermined chromaticity coordinates.In addition, owing to comprising that its luminescent layer has the color of low emission effciency, cause by the emission effciency reduction of the white light of red, green and blue combination results.
Summary of the invention
The present invention is devoted to provide a kind of organic light emitting apparatus with the advantage that improves quality of colour.
Comprise according to the exemplary embodiment of organic light emitting apparatus of the present invention: multiple have color pixel and a white pixel, and wherein, each pixel comprises: the first electrode; The second electrode, in the face of the first electrode; Illuminated component, is placed between the first electrode and the second electrode, and white pixel also comprises the first translucent components, and the first translucent components is arranged on the first electrode to form microcavity with the second electrode.
In one exemplary embodiment, the first translucent components can comprise the combination of Ag, Al or Ag and Al.
Organic light emission member can comprise that transmitting has the multiple sub-emission layer of the light of different wave length, and the light with different wave length can be combined to launch white light substantially.
In one exemplary embodiment, white light can have the color of micro-Huang.
In one exemplary embodiment, the first translucent components can only be formed on the part place in the region that white light passes.
In one exemplary embodiment, multiple coloured pixels comprise red pixel, green pixel and blue pixel, each colour filter that has color pixel also can comprise to be formed on below the first electrode.
In one exemplary embodiment, also can comprise the second translucent components in multiple pixels in having color pixel with minimum emission effciency, the second translucent components is arranged on the first electrode, to form microcavity together with the second electrode.
In one exemplary embodiment, the pixel that has a minimum emission effciency can be blue pixel.
In one exemplary embodiment, the second translucent components can comprise the combination of Ag, Al or Ag and Al.
In one exemplary embodiment, the second translucent components can be formed on the top, substantially whole region that white light passes.
In one exemplary embodiment, multiple coloured pixels comprise red pixel and green pixel, and red pixel and green pixel also can comprise the colour filter being formed on below the first electrode.
In one exemplary embodiment, organic light emitting apparatus also can comprise: drive thin-film transistor, be connected to the first electrode, and comprise poly semiconductor; Switching thin-film transistor, is connected to driving thin-film transistor, and comprises amorphous semiconductor.
In one exemplary embodiment, drive thin-film transistor also can comprise: to drive input electrode, be formed on poly semiconductor; Driver output electrode, on poly semiconductor to drive input electrode; Drive control electrode, be formed on and drive on input electrode and driver output electrode.
In one exemplary embodiment, switching thin-film transistor also can comprise: switch control electrode, is formed on below amorphous semiconductor; Switch input electrode, is formed on amorphous semiconductor; Switch output electrode to switch input electrode, and is connected to driving control electrode on amorphous semiconductor.
In a further exemplary embodiment, a kind of organic light emitting apparatus comprises multiple pixels, and wherein, each pixel comprises: switching thin-film transistor; Drive thin-film transistor, be connected to switching thin-film transistor; The first electrode, is connected to driving thin-film transistor; Illuminated component, is formed on the first electrode and transmitting white; The second electrode, is formed on illuminated component, and multiple pixels comprise: the first pixel groups, comprise the multiple pixels that are provided with translucent components, wherein, in the region of each pixel of passing at white light, translucent components and the first electrode form microcavity with together with in the second electrode one; The second pixel groups, is included in the multiple pixels that are provided with colour filter in the region of each pixel that white light passes.
In one exemplary embodiment, white light can have the color of micro-Huang.
In one exemplary embodiment, the first pixel groups can comprise white pixel.
In one exemplary embodiment, translucent components can only be formed on the part place in the region of each pixel that white light passes.
In one exemplary embodiment, the first pixel groups can comprise blue pixel.
In one exemplary embodiment, the second pixel groups can comprise at least one in red pixel and green pixel.
In a further exemplary embodiment, a kind of organic light emitting apparatus comprises: the first electrode, comprises catoptrical conductor; The second electrode, faces the first electrode and comprises semi-transparent conductor; The first organic light emission member, is placed between the first electrode and the second electrode, and comprises the first emission layer of launching the first color; Third electrode, faces the second electrode and comprises transparent conductor; The second organic light emission member, be placed between the second electrode and third electrode, and comprise launch the second color the second emission layer and transmitting the 3rd color the 3rd emission layer, wherein, the first electrode and the second electrode form microcavity, and the first organic light emission member has improved the light of the first color of colorimetric purity by microcavity towards the second electrode transmitting.
In one exemplary embodiment, the first electrode, the first organic light emission member and the second electrode can form the first organic illuminating element; The second electrode, the second organic light emission member and third electrode can form the second organic illuminating element.
In one exemplary embodiment, the first organic illuminating element and the second organic illuminating element can have different emission effciencies.
In one exemplary embodiment, the first emission layer, the second emission layer and the 3rd emission layer can have different thickness.
In one exemplary embodiment, the first color can be blue, and the second color can be green, and the 3rd color can be red.
In one exemplary embodiment, the first electrode can have the first work function, and the second electrode can have second work function higher than the first work function, and third electrode can have three work function higher than the second work function.
In a further exemplary embodiment, a kind of organic light emitting apparatus comprises: the first electrode, comprises catoptrical conductor; The second electrode, faces the first electrode and comprises semi-transparent conductor; The first organic light emission member, is placed between the first electrode and the second electrode, and comprises the first emission layer and the second emission layer of launching the second color of launching the first color; Third electrode, faces the second electrode and comprises transparent conductor; The second organic light emission member, be formed between the second electrode and third electrode, and comprise the 3rd emission layer of launching the 3rd color, wherein, the first electrode and the second electrode form microcavity, have improved the light of the 3rd color of colorimetric purity towards third electrode transmitting by microcavity, the light of the 3rd color is launched from the 3rd emission layer, through the second electrode, reflected by the first electrode, and again passed the second electrode before passing third electrode.
In one exemplary embodiment, the first color can be green, and the second color can be red, and the 3rd color can be blue.
Accompanying drawing explanation
In detailed description of the present invention below in conjunction with accompanying drawing, above and other aspects, features and advantages of the present invention will become clearer, in the accompanying drawings:
Fig. 1 shows according to the equivalent circuit diagram of the exemplary embodiment of organic light emitting apparatus of the present invention;
Fig. 2 shows according to the schematic diagram of the exemplary embodiment of the layout of multiple pixels in the exemplary embodiment of organic light emitting apparatus of the present invention;
Fig. 3 shows the top plan view layout of two pixels adjacent one another are in the exemplary embodiment of the organic light emitting apparatus of Fig. 2;
Fig. 4 and Fig. 5 are the cutaway views intercepting along the line IV-IV '-IV " IV " ' in Fig. 3 and V-V respectively;
Fig. 6 illustrates the schematic diagram of locating the exemplary embodiment of the shape of the translucent components forming in white pixel (W);
Fig. 7 to Figure 11 is that order shows according to the cutaway view of the building method of the exemplary embodiment of organic light emitting apparatus of the present invention;
Figure 12, Figure 14, Figure 16, Figure 19 and Figure 22 are that order shows the top plan view layout according to the building method of the exemplary embodiment of organic light emitting apparatus of the present invention;
Figure 13 is the " cutaway view intercepting along the line XIII-XIII '-XIII in Figure 12;
Figure 15 is the " cutaway view intercepting along the line XV-XV '-XV in Figure 14;
Figure 17 and Figure 18 are the cutaway views intercepting along the line XVII-XVII '-XVII " XVII " ' in Figure 16 and XVIII-XVIII respectively;
Figure 20 and Figure 21 are the cutaway views intercepting along the line XX-XX '-XX " XX " ' in Figure 19 and XXI-XXI respectively;
Figure 23 and Figure 24 are the cutaway views intercepting along the line XXIII-XXIII '-XXIII " XXIII " ' in Figure 22 and XXIV-XXIV respectively;
Figure 25 is the top plan view layout according to another exemplary embodiment of organic light emitting apparatus of the present invention;
Figure 26 is the cutaway view intercepting along the line XXVI-XXVI in Figure 25;
Figure 27 shows according to the schematic diagram of another exemplary embodiment of organic light emitting apparatus of the present invention;
Figure 28 shows according to the schematic diagram of the another exemplary embodiment of organic light emitting apparatus of the present invention.
Embodiment
Come with reference to the accompanying drawings hereinafter to describe more fully now the present invention, embodiments of the invention shown in the drawings.But the present invention can implement in many different forms, should not be understood to be limited to the embodiment setting forth here.On the contrary, provide these embodiment, it will be thorough with completely making the disclosure, and scope of the present invention is fully conveyed to those skilled in the art.Identical label represents identical element all the time.
It should be understood that in the time that element is known as on another element, it can be directly on another element or can have betwixt intermediary element.On the contrary, in the time that element is known as directly on another element, there is not intermediary element.As used herein, term "and/or" comprises one or more relevant combining arbitrarily and all of lising.
It should be understood that, although term " first ", " second ", " the 3rd " etc. can be used for describing different elements, assembly, region, layer and/or part here, these elements, assembly, region, layer and/or part are not limited by these terms should.These terms are just used for an element, assembly, region, layer or part and another element, assembly, region, layer or part to distinguish.Therefore,, in the situation that not departing from instruction of the present invention, the first element discussed below, assembly, region, layer or part can be known as the second element, assembly, region, layer or part.
Term used herein is for the object of describing specific embodiment, and is not intended to become restriction of the present invention.As used herein, unless context clearly point out, otherwise singulative is also intended to comprise plural form.It should also be understood that, when using term " to comprise " in specification and/or when " comprising ", it shows to exist described feature, region, entirety, step, operation, element and/or assembly, but does not get rid of existence or the interpolation of one or more further features, region, entirety, step, operation, element, assembly and/or their group.
In addition, this use relational language such as " ... below " or " bottom ", " ... above " or " top " be described in an element shown in accompanying drawing and the relation of other element.It should be understood that relational language is intended to comprise the different azimuth of the device the orientation of describing in accompanying drawing.For example, if by the device upset in a width accompanying drawing, the element that is described as be in other element " below " will be positioned in other element " above " subsequently.Therefore, particular orientation with reference to the accompanying drawings, term " ... can comprise below " " ... below " with " in ... two orientation above ".Similarly, if by the device upset in a width accompanying drawing, the element that is described as be in other element " below " or " below " will be positioned in subsequently other element " more than ".Therefore, exemplary term " ... following " or " in ... below " can comprise " ... more than " with " in ... two orientation below ".
Unless otherwise defined, otherwise the implication that the implication of all terms used herein (comprising technical term and scientific terminology) and those skilled in the art understand is conventionally identical.It should also be understood that, the term for example limiting in general dictionary should be understood to that its implication is consistent with their implication in association area and content of the present disclosure, unless and here specifically limited, otherwise should be by Utopian or excessively formally understanding.
Here with reference to the cutaway view of the indicative icon as desirable embodiment of the present invention, exemplary embodiment of the present invention is described.Thus, be the variation of the illustrated shape that caused by for example manufacturing technology and/or tolerance by what expect.Therefore, embodiments of the invention should not be understood to be limited to the given shape in shown here region, but will comprise the deviation of the shape for example being caused by manufacture.For example, illustrate or be described as smooth region and can conventionally there is coarse or nonlinear feature.In addition the acute angle illustrating, can be rounded.Therefore, the region shown in accompanying drawing is that schematically their shape is not intended to illustrate the accurate shape in region, is not intended to limit the scope of the invention in essence.
Hereinafter, carry out with reference to the accompanying drawings to describe in more detail the present invention.
First, with reference to Fig. 1, organic light emitting apparatus is according to an illustrative embodiment of the invention described more fully.
Fig. 1 is the equivalent circuit diagram illustrating according to the exemplary embodiment of organic light emitting apparatus of the present invention.
With reference to Fig. 1, comprise according to the exemplary embodiment of organic light emitting apparatus of the present invention: many signal line 121,171 and 172; Multiple pixel PX, are connected to holding wire.The approximate matrix shape that is arranged as of multiple pixel PX.
Holding wire comprises: many gate lines 121, transmission signal (also referred to as sweep signal); Many data wires 171, transmission of data signals; Many drive voltage line 172, transmission driving voltage.Gate line 121 extends substantially in the row direction, and roughly parallel to each other, and data wire 171 and drive voltage line 172 are substantially perpendicular to gate line 121 along column direction and extend also roughly parallel to each other.
Each pixel PX comprises switching thin-film transistor Qs, drives thin-film transistor Qd, holding capacitor Cst and Organic Light Emitting Diode LD.
Switching thin-film transistor Qs has control end, input and output.The control end of switching thin-film transistor Qs is connected to gate line 121, and the input of switching thin-film transistor Qs is connected to data wire 171, and the output of switching thin-film transistor Qs is connected to and drives thin-film transistor Qd.Response is applied to the sweep signal of gate line 121, and switching thin-film transistor Qs is to driving thin-film transistor Qd transmission to be applied to the data-signal of data wire 171.
Drive thin-film transistor Qd also to there is control end, input and output.Drive the control end of thin-film transistor Qd to be connected to switching thin-film transistor Qs; Drive the input of thin-film transistor Qd to be connected to drive voltage line, drive the output of thin-film transistor Qd to be connected to Organic Light Emitting Diode LD.Drive thin-film transistor Qd to make output current I
lDflow into Organic Light Emitting Diode LD.Output current I
lDintensity change according to the voltage that is applied between control end and output.
Capacitor Cst is connected between the control end and input that drives thin-film transistor Qd.Capacitor Cst is filled with the data-signal that is applied to the control end that drives thin-film transistor Qd, even and the data-signal that also maintenance is filled with after switching thin-film transistor Qs cut-off.
Organic Light Emitting Diode LD has: anode, is connected to the output that drives thin-film transistor Qd; Negative electrode, is connected to common voltage Vss.Organic Light Emitting Diode LD transmitting is according to the output current I by driving thin-film transistor Qd to provide
lDsize and the light of change intensity.Multiple pixels can be used to show image together, and wherein, each pixel comprises light-emitting diode.
In this exemplary embodiment, switching thin-film transistor Qs and driving thin-film transistor Qd are n slot field-effect transistor (FET).But in optional exemplary embodiment, at least one in switching thin-film transistor Qs and driving thin-film transistor Qd can be p channel fet.In addition, optional exemplary embodiment comprises the structure that wherein annexation between thin-film transistor Qs and Qd, capacitor Cst and Organic Light Emitting Diode LD can be exchanged.
The detailed construction of the organic light emitting apparatus shown in Fig. 1 is described with reference to Fig. 2 to Fig. 5 and Fig. 1 now.
Fig. 2 shows according to the schematic diagram of the exemplary embodiment of the layout of multiple pixels in the exemplary embodiment of organic light emitting apparatus of the present invention, Fig. 3 shows the top planes layout of two pixels adjacent one another are in the exemplary embodiment of organic light emitting apparatus of Fig. 2, and Fig. 4 and Fig. 5 are the cutaway views intercepting along the line IV-IV '-IV " IV " ' in Fig. 3 and V-V respectively.
First, with reference to Fig. 2, in organic light emitting apparatus according to an illustrative embodiment of the invention, show red red pixel R, show green green pixel G and show blue blue pixel B and do not show that the white pixel W of any color alternately arranges.In this exemplary embodiment, comprise that four pixels of red pixel R, green pixel G, blue pixel B and white pixel W form one group, can carry out the such group of repetition along row and/or row.But the form shown in Fig. 2 is an exemplary embodiment, optional exemplary embodiment comprises the structure that wherein layout of pixel can differently convert.
As mentioned above, owing to also comprising white pixel W except red pixel R, green pixel G and blue pixel B, can improve the brightness of display.
The detailed construction of organic light emitting apparatus then, is described more fully with reference to Fig. 3 to Fig. 5.
Fig. 3 shows the white pixel W and the blue pixel B that in the exemplary embodiment of organic light emitting apparatus of Fig. 2, dot.In these two pixels, the structure of gate line 121, data wire 171, drive voltage line 172, switching thin-film transistor Qs and driving thin-film transistor Qd is substantially similar each other, the still structure difference of Organic Light Emitting Diode in these two different pixels.Therefore,, in Fig. 3, identical label represents similar assembly.
In dielectric base 110, form multiple driving semiconductor 154b and multiple linear semiconductor member 151.The exemplary embodiment of dielectric base 110 can be made up of transparent glass or plastics.
Drive input electrode 173b and driver output electrode 175b to there is respectively island shape, and separate with gate line 121.Drive input electrode 173b in the face of driver output electrode 175b, and be arranged on driving semiconductor 154b.
In one exemplary embodiment, gate line 121, drive input electrode 173b and driver output electrode 175b can be by aluminiferous metals (such as aluminium (Al) or aluminium alloy), containing silver metal (such as silver (Ag) or silver alloy), copper-containing metal (such as copper (Cu) or copper alloy), make containing molybdenum (such as molybdenum (Mo) or molybdenum alloy), chromium (Cr), tantalum (Ta) or titanium (Ti).
In optional exemplary embodiment, gate line 121, driving input electrode 173b and driver output electrode 175b can have the sandwich construction of two conductive layer (not shown) that comprise that physical property is different.
In one exemplary embodiment, gate line 121, driving input electrode 173b and driver output electrode 175b can spend the angle between about 80 degree with respect to the surface tilt of substrate 110 about 30.
Paired ohmic contact 163b and 165b are respectively formed at and drive semiconductor 154b and drive between input electrode 173 and drive between semiconductor 154b and driver output electrode 175b.In addition be formed between gate line 121 and linear semiconductor member 151 doped with the linear semiconductor member 161 of impurity.
In one exemplary embodiment, linear semiconductor member 161 and ohmic contact 163b, 165b can by severe doped with N-shaped impurity such as the microcrystal silicon of phosphorus (P) or doped with impurity such as the crystalline semiconductor materials of polysilicon is made.
In one exemplary embodiment, data wire 171, drive voltage line 172 and electrode member 176 can be made up of the material identical with the material of above-mentioned gate line 121.
The side of data wire 171, drive voltage line 172 and electrode member 176 can be with respect to the angle between about 30 degree of the surface tilt of substrate 110 and about 80 degree.
Paired ohmic contact 163a and 165a are respectively formed between switching semiconductor 154a and switch input electrode 173a and between switching semiconductor 154a and switch output electrode 175a.Ohmic contact 163a and 165a have island shape shape, and in one exemplary embodiment, ohmic contact 163a and 165a can be made up doped with other similar material of impurity (such as phosphorus (P)) of amorphous silicon hydride or severe.
Colour filter is formed on data wire 171, drive voltage line 172 and electrode member 176.Because Fig. 3 to Fig. 5 only illustrates white pixel W and blue pixel B, therefore only at blue color filter 230B shown in blue pixel B.But, in fact, in red pixel R, green pixel G and blue pixel B, form respectively red color filter (not shown), green color filter (not shown) and blue color filter 230B.In current exemplary embodiment, white pixel W does not comprise colour filter.Optional exemplary embodiment comprises that white pixel W wherein can comprise the structure of transparent color filters (not shown).
In one exemplary embodiment, interlayer insulating film (not shown) can be formed on below colour filter 230B.Interlayer insulating film can prevent that the pigment (pigment) of colour filter from flowing into driving semiconductor 154b or switching semiconductor 154a.
Contact auxiliary member 81 is connected to the end 129 of gate line 121 by contact hole 181, contact auxiliary member 82 is connected to the end 179 of data wire 171 by contact hole 182.In the time that contact auxiliary member 81 and 82 is adhered to external device (ED), the adhesion between end 129 and end 179 and the external device (ED) of data wire 171 of contact auxiliary member 81 and 82 supply gate polar curves 121, and prevent that said elements from separating.
In one exemplary embodiment, pixel electrode 191, connecting elements 85 and contact auxiliary member 81,82 can be by transparent conductive material such as indium zinc oxide (IZO) or tin indium oxide (ITO) are made.
Multiple translucent components 192 are formed on the pixel electrode 191 of white pixel W.The material of translucent components 192 has no particular limits, as long as material transmission part light antireflection part light.The exemplary embodiment of translucent components 192 comprises that conductor opaque and that absorption coefficient is low is such as Al or Ag, and described conductor is formed to be had approximately
to about
thin thickness, translucent to become.
According to this exemplary embodiment of the present invention, translucent components 192 is positioned on pixel electrode 191, but optional exemplary embodiment comprises that wherein translucent components 192 can be positioned at pixel electrode 191 structure below.
In current exemplary embodiment, red pixel R, green pixel G and blue pixel B do not comprise translucent components 192.
Fig. 3 to Fig. 5 illustrates the translucent components 192 of (checkerboard) pattern that has checkerboard, but the invention is not restricted to this.Optional exemplary embodiment comprises the structure that wherein translucent components 192 can be formed by the shape shown in Fig. 6.
Fig. 6 is the schematic diagram that illustrates the exemplary embodiment of the shape of the translucent components 192 being formed on white pixel W.
In Fig. 6, (a) show the shape of the translucent components 192 in the structure forming along the edge of pixel electrode 191; (b) only show the shape of the translucent components 192 in the structure that becomes at a dihedral of pixel electrode 191; (c) show the shape of the translucent components 192 in the structure that is formed on pixel electrode 191 center.In any one of above-mentioned exemplary embodiment, only the part in the region of passing from the light of emission layer transmitting, form translucent components 192, pixel electrode 191 is exposed in other region.Be transmitted to the whole surface of substrate through the light of pixel electrode 191, propagate into that in the light of translucent components 192, only some is transmitted to the whole surface of substrate, and the light that does not have transmission to pass translucent components 192 is reflected.
Referring again to Fig. 3 to Fig. 5, on pixel electrode 191, translucent components 192, connecting elements 85 and passivation layer 180, form insulation dike 361.Insulation dike 361 surrounds the edge of pixel electrode 191 to limit opening 365.The exemplary embodiment of insulation dike 361 can be by heat-resisting and solvent-proof organic insulator such as acrylic resin (acrylic resin), polyimide resin are made, or can be by inorganic insulator such as silicon dioxide (SiO
2) and titanium dioxide (TiO
2) make, and can have by structure two-layer or the more multi-layered multilayer forming.In one exemplary embodiment, insulation dike 361 can be made up of the photosensitive material that comprises black pigment.In such exemplary embodiment, insulation dike 361 is as resistance light member, and it is simple to form the technique of this dike.
On insulation dike 361 and pixel electrode 191, form organic illuminated component.
Organic light emission member can comprise: emission layer 370, utilizing emitted light; Auxiliary layer (not shown), the emission effciency of raising emission layer.
The exemplary embodiment of emission layer 370 can be made up of high molecular weight material or low molecular weight material.The exemplary embodiment of high molecular weight material can comprise that for example poly-fluorene derivative, (gathering) are to phenylacetylene derivatives, polyphenylene derivative, polyvinylcarbazole, polythiofuran derivative.In addition, the exemplary embodiment of low molecular weight material can comprise that anthracene is (such as 9,10-diphenylanthrancene (9,10-diphenylanthracene)), butadiene (such as four benzene butadiene (tetraphenylbutadiene)), aphthacene, two stilbene class (distyrylarylene) derivative, indole derivatives, carbazole derivates.Above-mentioned high molecular weight material or low molecular weight material are known as material of main part (host material), can be by improving its emission effciency to material of main part doping dopant.The exemplary embodiment of dopant comprises (folder) xanthene (xanthene), perylene, cumarin (cumarin), rhodamine, rubrene, dicyano methylene pyrans (dicyanomethylenepyran) compound, thiapyran (thiopyran) compound, thiapyran ((thia) pyrylium) compound, two indenos (1, 2, 3-cd:1 ', 2 ', 3 '-lm) perylene (periflanthene) derivative, Yin Bing perylene (indenoperylene) derivative, quinolone (carbostyril) compound, Nile red, quinacridone.
The exemplary embodiment of auxiliary layer comprises electron transfer layer (not shown), hole transmission layer (not shown), electron injecting layer (not shown) and hole injection layer (not shown), wherein, electron transfer layer and hole transmission layer are for regulating the balance in electronics and hole, and electron injecting layer and hole injection layer are for strengthening the injection in electronics and hole.In addition, optional exemplary embodiment comprises that wherein auxiliary layer can comprise the two-layer or more multi-layered structure of above-mentioned layer.
Hole transmission layer and hole injection layer can be made by having in the work function of pixel electrode 191 and the highest material that takies the HOMO energy level between molecular orbit (HOMO) energy level of emission layer, and electron transfer layer and electron injecting layer can be made up of the material with the lumo energy between the work function of common electrode 270 and the lowest unoccupied molecular orbital (LUMO) of emission layer (LUMO) energy level.
The exemplary embodiment of hole transmission layer or hole injection layer comprises diamines, [4, 4 ', 4 " tri-(3-aminomethyl phenyl) phenyl amino] triphenylamine ([4, 4 ', 4 " tris (3-methylphenyl) phenylamino] triphenylamin, MTDATA), N, N '-diphenyl-N, N '-bis-(3-aminomethyl phenyl)-1, 1 '-diphenyl-4, 4 '-diamines (N, N '-diphenyl-N, N '-di (3-methylphenyl)-1, 1 '-biphenyl-4, 4 '-diamine, TPD), 1, 1-bis-(4-bis--p-tolyl aminophenyl) cyclohexylamine (1, 1-bis (4-di-p-tolylaminophenyl) cyclohexane)), N, N, N ', N '-tetra-(2-naphthyl)-4, 4-diaminourea-p-terphenyl (N, N, N ', N '-tetra (2-naphthyl)-4, 4-diamino-p-terphenyl), 4, 4 ', 4-tri-[(3-aminomethyl phenyl) phenyl amino] triphenylamine (4, 4 ', 4-tris[(3-methylphenyl) phenylamino] triphenylamine), polypyrrole, polyaniline, poly--(3, 4-vinyl dioxy thiophene): poly styrene sulfonate (poly-(3, 4-ethylenedioxythiophene:polystyrenesulfonate " PEDOT:PSS ").
Hereinafter, will the exemplary embodiment of white pixel W be described.
According to this exemplary embodiment of the present invention, can, by optionally launching from emission layer 370 white light of having adjusted towards blue wavelength, improve the blue purity of display.Thus, overcome the restriction of the emission effciency of the display causing due to the restriction of luminescent material, specifically, overcome the restriction causing due to the low emission effciency of blue emitting material, thereby can obtain not being subject to the wherein white luminous layer of the efficiency limitations, among others of any independent component.Although described current exemplary embodiment for adjusting the blue component that white luminous layer and translucent components 192 strengthen in white light, optional exemplary embodiment comprises that wherein white luminous layer and translucent components 192 can be adjusted to the structure of other component (such as red component or green component) in enhancing white light.
Now, as mentioned above, a part for pixel electrode 191 is covered by translucent components 192, and remainder is exposed.Therefore, can launch blue light by the microcavity in the region that forms translucent components 192, and white light is directly through the region that does not form translucent components 192,, passes the region that pixel electrode 191 is exposed that is.Now, owing to not comprising by the blue light of translucent components 192 part reflections through the white light of pixel electrode 191, therefore owing to having reduced part blue light in white light, cause white light to there is the color of micro-Huang.Finally, by the white of blue light and micro-Huang being combined to make the light that is transmitted into substrate outside there is whole white.
In the place that does not have microcavity effect, if identical electric current is applied to the emission layer that comprises red sub-emission layer, green sub-emission layer and blue sub-emission layer, every different color of sub-emission layer transmitting color characteristics, wherein, red sub-emission layer and green sub-emission layer all have high emission efficiency, and blue sub-emission layer has low emission effciency.In addition, every light that sub-emission layer is measured transmitting difference under given voltage, the light therefore finally obtaining will have larger weight to the color of the higher sub-emission layer of efficiency.Therefore, be difficult to carry out transmitting white by combination from the light of all three sub-emission layers.According to this exemplary embodiment of the present invention, overcome the restriction of the emission effciency causing due to emissive material, thereby obtained the white light of specifying.
In the current exemplary embodiment of organic light emitting apparatus, switching thin-film transistor Qs is provided with: switch control electrode 124a, is connected to gate line 121; Switch input electrode 173a, is connected to data wire 171; Switch output electrode 175a, is connected with driving control electrode 124b, and wherein, switch control electrode 124a, switch input electrode 173a arrange together with switching semiconductor 154a with switch output electrode 175a.The raceway groove of switching TFT Qs forms in the switching semiconductor 154a between switch input electrode 173a and switch output electrode 175a in place.Drive thin-film transistor Qd to be provided with: to drive control electrode 124a, be connected to switch output electrode 175a; Drive input electrode 173b, be connected to drive voltage line 172; Driver output electrode 175b, is connected to pixel electrode 191, wherein, drives control electrode 124a, drives input electrode 173b to arrange together with driving semiconductor 154b with driver output electrode 175b.The raceway groove of drive TFT Qd forms in the driving semiconductor 154b in driving between input electrode 173b and driver output electrode 175b in place.
Organic Light Emitting Diode is provided with pixel electrode 191, emission layer 370 and common electrode 270.Now, pixel electrode 191 is as anode, and common electrode 270 is as negative electrode.In optional exemplary embodiment, pixel electrode 191 can be used as negative electrode, and common electrode 270 can be used as anode.
As mentioned above, in one exemplary embodiment, switching semiconductor 154a is made up of amorphous semiconductor, drives semiconductor 154b to be made up of crystal semiconductor.That is, in current exemplary embodiment, the raceway groove of switching TFT Qs is formed in amorphous semiconductor, and the raceway groove of drive TFT Qd is formed in crystal semiconductor.
According to current exemplary embodiment of the present invention, the raceway groove of switching TFT Qs and drive TFT Qd is respectively formed in the semiconductor with different crystalline states.Therefore, can meet required independent, the different characteristic of each TFT.
If the raceway groove of drive TFT Qd is formed in crystallite or poly semiconductor, can obtain high carrier mobility and stability.Therefore, the stable magnitude of current that flows into light-emitting component increases, thereby brightness improves.In addition,, if the raceway groove of drive TFT Qd is formed in crystallite or poly semiconductor, can prevent threshold voltage vt h drift.Threshold voltage vt h drift refers to the change gradually of threshold voltage vt h, and along with time lapse, this change of threshold voltage is by the image quality of deteriorated display owing to causing image retention, and the life-span of display is finally shortened in this drift meeting.Threshold voltage vt h drift produces owing to applying continuously positive voltage in driving process.Therefore, current exemplary embodiment can reduce or effectively prevent the lost of life of image retention and display unit.
Meanwhile, because switching TFT Qs controls data voltage, so the conduction and cut-off characteristic of TFT Qs is important, specifically, importantly reduce the magnitude of current that flows through the TFT in cut-off state.But if switching TFT Qs is made up of crystallite or poly semiconductor, switching TFT Qs will have large cut-off current, and voltage difference through the data voltage of the switching TFT Qs in conducting state and cut-off state will reduce.Therefore, can produce and reduce crosstalking of display quality of image.Therefore, in current exemplary embodiment, can there is by switching TFT Qs is formed with the amorphous semiconductor of low cut-off current, prevent that the reduction of data voltage minimizing from crosstalking.
According to this current exemplary embodiment of the present invention, show a switching TFT Qs and a drive TFT Qd, but optional exemplary embodiment also can comprise at least one TFT and many wirings for drive TFT.Thus, even in the time of long-time driving organic light emitting apparatus, also can, by preventing or compensate the deteriorated of Organic Light Emitting Diode and drive TFT Qd, prevent the lost of life of organic light emitting apparatus.
Above-mentioned exemplary embodiment of the present invention has exemplarily illustrated light that emission layer 370 the is launched bottom emission structure towards substrate 110 transmissions.But, can use the exemplary embodiment that is configured to top emission structure, in top emission structure, by the light of launching from emission layer 370 towards common electrode 270 transmissions.In such exemplary embodiment, pixel electrode 191 can be by opaque conductor such as Al, Au, Pt, Ni, Cu, W or its alloy are made, and common electrode can be by transparent conductor such as ITO or IZO make.In addition,, in the exemplary embodiment that is configured to top emission structure, colour filter 230B, red color filter and green color filter (not shown) are positioned at the upper surface of emission layer 370.
Then, describe the exemplary embodiment of the building method of the exemplary embodiment of the organic light emitting apparatus shown in Fig. 2 to Fig. 5 in detail with reference to Fig. 7 to Figure 23.
Fig. 7 to Figure 11 is that order shows according to the cutaway view of the building method of the exemplary embodiment of organic light emitting apparatus of the present invention exemplary embodiment; Figure 12, Figure 14, Figure 16, Figure 19 and Figure 22 are that order shows according to the top plan view layout of the building method of the exemplary embodiment of organic light emitting apparatus of the present invention exemplary embodiment; Figure 13 is the " cutaway view intercepting along the line XIII-XIII '-XIII in Figure 12; Figure 15 is the " cutaway view intercepting along the line XV-XV '-XV in Figure 14; Figure 17 and Figure 18 are the cutaway views intercepting along the line XVII-XVII '-XVII " XVII " ' in Figure 16 and XVIII-XVIII respectively; Figure 20 and Figure 21 are the cutaway views intercepting along the line XX-XX '-XX " XX " ' in Figure 19 and XXI-XXI respectively; Figure 23 and Figure 24 are the cutaway views intercepting along the line XXIII-XXIII '-XXIII " XXIII " ' in Figure 22 and XXIV-XXIV respectively; Figure 25 is the top plan view layout according to the exemplary embodiment of organic light emitting apparatus of the present invention; Figure 26 is the cutaway view intercepting along the line XXVI-XXVI in Figure 25.
First, as shown in Figures 7 and 8, amorphous silicon layer 150a and the amorphous silicon layer 160a doped with impurity are sequentially laminated in dielectric base 110.
Then, by forming polysilicon layer 150b and the polysilicon layer 160b doped with impurity by amorphous silicon layer 150a with doped with the amorphous silicon layer 160a crystallization of impurity respectively.The exemplary embodiment of crystallization can for example be carried out by the technique of solid-phase crystallization (SPC), rapid thermal annealing (RTA), liquid phase recrystallization (LPR) or quasi-molecule laser annealing (ELA).An exemplary embodiment is utilized SPC technique.
Then, lamination conductive layer 120 on the polysilicon layer 160b doped with impurity, the exemplary embodiment of conductive layer 120 is made up of aluminiferous metals, and photoresist layer 45 is coated on conductive layer 120.
Then the mask 15 that, has transmitance region 15a, light shielded area 15b and a light half transmitting district 15c is arranged on the top of photoresist floor 45.The exemplary embodiment of light half transmitting district 15c comprises slot (slit) pattern, grid pattern or has the film of intermediate transmission rate or interior thickness.Use therein in an exemplary embodiment of slot pattern, the interval between width or the slot of slot is less than the resolution of the exposure device using in light technique.
Then, as shown in Figure 9, by photoresist layer 45 being exposed and developing to form the first photoresist pattern 45a and thin the second photoresist pattern 45b than the first photoresist pattern 45a.
For convenience of description, organic light emitting apparatus can be divided into electrode district (A), channel region (B) and remaining area (C), wherein, remaining area (C) is all any regions except electrode district (A) and channel region (B) substantially.Gate line 121, driving input electrode 173b and driver output electrode 175b are formed in electrode zone (A).In addition, in the driving semiconductor 154b in channel region (B), form raceway groove.
The the first photoresist pattern 45a that is positioned at electrode district (A) is formed thicker than the second photoresist pattern 45b that is positioned at channel region (B), and the photoresist layer that is positioned at remaining area (C) is completely removed.Now, according to by subsequently describe etching technics in process conditions, the ratio of the thickness of the thickness of the first photoresist pattern 45a and the second photoresist pattern 45b is different.But, in one exemplary embodiment, the thickness of the second photoresist pattern 45b be set to the first photoresist pattern 45a thickness about 1/2 or thinner.
Then, as shown in figure 10, utilize the first photoresist pattern 45a and the second photoresist pattern 45b as mask, wet etching is exposed to the conductive layer 120 in remaining area (C).Form by conductive layer 120 being carried out to wet etching the gate line 121 and the conductive member 174b that comprise switch control electrode 124a and end 129.
Then, utilize gate line 121 and conductive member 174b as mask, the polysilicon layer 150b that dry ecthing exposes in remaining area (C) and the polysilicon layer 160b doped with impurity.By carrying out dry ecthing to polysilicon layer 150b with doped with the polysilicon layer 160b of impurity, form linear semiconductor member 151, drive semiconductor 154b, linear semiconductor member 161 and ohmic contact layer 164b doped with impurity.Now, form linear semiconductor member 151 and the linear semiconductor member 161 doped with impurity, to make it have and the essentially identical flat shape of shape of gate line 121.In addition, form and drive semiconductor 154b and ohmic contact layer 164b, to make it have and the essentially identical flat shape of shape of conductive member 174b.
Then, as shown in figure 11, utilize etch-back technics (etch back process) to remove the second photoresist pattern 45b of channel part B, the exemplary embodiment of etch-back technics comprises cineration technics.Now, the thickness of the first photoresist pattern 45a is reduced to the amount substantially equating with the thickness of the second photoresist pattern 45b.
In addition, owing to having removed the second photoresist pattern 45b, therefore conductive member 174b is divided into and drives input electrode 173b and driver output electrode 175b, and ohmic contact layer 164b is exposed to the passage driving between input electrode 173b and driver output electrode 175b.
As shown in Figure 12 and Figure 13, remove the remainder of the first photoresist pattern 45a, utilize and drive input electrode 173b and driver output electrode 175b to carry out dry ecthing ohmic contact layer 164b as mask, thereby by the dry ecthing of ohmic contact layer 164b is formed into right ohmic contact 163b and 165b.
Then, as shown in Figure 14 and Figure 15, gate insulator 140 is formed on dielectric base 110 and holding wire.Then, intrinsic amorphous silicon layer, be laminated to continuously gate line 121, drive input electrode 173b and driver output electrode 175b upper doped with the amorphous silicon layer of impurity, then by intrinsic amorphous silicon layer with carry out photoetching doped with the amorphous silicon layer of impurity and form switching semiconductor 154a and ohmic contact layer 164a.
As shown in Figure 16 to Figure 18, conductive layer is laminated to gate insulator 140 and ohmic contact layer 164a is upper, then, forms the data wire 171, drive voltage line 172 and the electrode member 176 that comprise switch input electrode 173a and end 179 by photoetching process.Electrode member 176 comprises switch output electrode 175a and drives control electrode 124b.
Then, utilize switch input electrode 173a and switch output electrode 175a to carry out etching ohmic contact layer 164a as mask, thereby by the etching of ohmic contact layer 164a is formed into right ohmic contact 163a and 165a.The etching of ohmic contact layer 164a is also exposed to a part of switching semiconductor 154a.
Then,, as shown in Figure 19 to Figure 21, colour filter 230B is formed on data wire 171, drive voltage line 172, electrode member 176, the switching semiconductor 154a exposing and gate insulator 140.According to the layout of the pixel of an exemplary embodiment shown in figure 2, colour filter forms red color filter in red pixel R, in green pixel G, forms green color filter, in blue pixel B, forms blue color filter.In addition, in white pixel W, do not form independent colour filter, can in white pixel W, form transparent insulating barrier.
Then, it is upper that passivation layer 180 is laminated to colour filter 230B, is also laminated on other colour filter (not shown) and is laminated to white pixel top.In passivation layer 180 and gate insulator 140, form multiple contact hole 181,182,184,185a and 185b by photoetching process.
Then, as shown in Figure 22 to Figure 24, by carry out photoetching process after the conductive layer of deposit transparent, on passivation layer 180, form multiple pixel electrodes 191, connecting elements 85 and multiple auxiliary members 81,82 that contact, wherein, the exemplary embodiment of transparency conducting layer comprises ITO or IZO.
On the pixel electrode 191 of white pixel W, form translucent components 192.
Then, as shown in Figures 3 to 5, by the exposure to photoresist layer and development subsequently, on pixel electrode 191, translucent components 192, connecting elements 85, multiple contact auxiliary member 81,82 and passivation layer 180, form the insulation dike 361 with multiple openings 365.
Then, sequentially form multiple auxiliary layer (not shown) and emission layer 370.In one exemplary embodiment, can be by forming auxiliary layer and emission layer 370 such as deposition or the technique of ink jet printing.
Finally, on insulation dike 361 and emission layer 370, form common electrode 270.
Hereinafter, with reference to Figure 25 and Figure 26, the exemplary embodiment according to organic light emitting apparatus of the present invention is described.
Figure 25 is the top plan view layout according to another exemplary embodiment of organic light emitting apparatus of the present invention, and Figure 26 is the cutaway view intercepting along the line XXVI-XXVI in Figure 25.
Except colour filter and Organic Light Emitting Diode, substantially approximate according to the organic light emitting apparatus in the organic light emitting apparatus of this exemplary embodiment of the present invention and above-described embodiment.
That is, form multiple driving semiconductor 154b and the multiple linear semiconductor member 151 be made up of crystalline semiconductor materials in dielectric base 110, the exemplary embodiment of crystalline semiconductor materials comprises microcrystal silicon or polysilicon.
On driving semiconductor 154b and linear semiconductor member 151, form many gate lines 121, multiple driving input electrode 173b and multiple driver output electrode 175b.
Comprise switch input electrode 173a data wire 171, comprise the drive voltage line 172 of projection 177 and comprise switch output electrode 175a and drive the electrode member 176 of control electrode 124b to be formed on switching semiconductor 154a and gate insulator 140.
Colour filter is formed on data wire 171, drive voltage line 172 and electrode member 176.Now, different from aforesaid exemplary embodiment, colour filter is only formed in red pixel R and green pixel G.White pixel W does not comprise colour filter, or comprises transparent color filters (not shown), and blue pixel B does not comprise colour filter.
The passivation layer 180 with multiple contact hole 181,182,184,185a and 185b is formed on data wire 171, drive voltage line 172 and electrode member 176.
According to this exemplary embodiment of the present invention, translucent components 192 and 193 is positioned on pixel electrode 191, but other exemplary embodiment comprises that wherein translucent components can be positioned at pixel electrode 191 structure below.
Red pixel R and green pixel G do not comprise translucent components 192 and 193.
Multiple sub-emission layer (not shown) are sequentially laminated on insulation dike 361 and pixel electrode 191, and the emission layer 370 of transmitting white is formed on sub-emission layer, and common electrode 270 is formed on emission layer 370.
The white pixel W of this exemplary embodiment is substantially similar to the white pixel W of above-mentioned exemplary embodiment.,, forming in the region of translucent components 192, by the microcavity effect producing, can launch blue light from emission layer 370 between common electrode 270 and translucent components 192.Not forming in the region of translucent components 192, the white light of micro-Huang can directly be launched through pixel electrode 191.Therefore, can launch full white light by the combination of the white light of micro-Huang as above and blue light.
Different from above-mentioned exemplary embodiment, in this exemplary embodiment, blue pixel B does not comprise colour filter yet.By the microcavity effect producing between common electrode 270 and translucent components 193, blue pixel B can launch blue light from emission layer 370.The semitransparent layer 193 of blue pixel B basically forms above the whole light-emitting area of blue pixel, thereby only launches blue light.Therefore, can be in the case of not having independent colour filter transmitting there is the blue light of high colorimetric purity.
According to above-mentioned exemplary embodiment, suppose that the emission effciency of blue emitting material is minimum in redness, green and blue emitting material.But, in the relative low optional exemplary embodiment of the emission effciency of red illuminating material and green luminescent material, utilize the use of the translucent components of microcavity phenomenon can be applied in a similar fashion red pixel or green pixel therein.In addition, even in the time being different from redness, green and blue color by combination and producing white light, also can apply in an identical manner microcavity effect by the emission effciency of considering each color.
Hereinafter, another exemplary embodiment of the present invention will be described.
This exemplary embodiment represents by utilizing above-mentioned microcavity effect can improve the structure of the organic light emitting apparatus of the colorimetric purity of specific light.
Figure 27 is the schematic diagram illustrating according to another exemplary embodiment of organic light emitting apparatus of the present invention.
With reference to Figure 27, organic light emitting apparatus 500 comprises transparent substrates 10, bottom electrode 20, the first organic light emission member 30, target 40, the second organic light emission member 60 and top electrode 70.
The first organic light emission member 30 comprises the green emitted layer G and the red emission layer R that are laminated on bottom electrode 20.In one exemplary embodiment, red emission layer R is laminated on green emitted layer G.In one exemplary embodiment, the first organic light emission member 30 also can comprise hole injection layer 31 and the hole transmission layer 32 between green emitted layer G and bottom electrode 20.
Meanwhile, optional exemplary embodiment comprises the structure that wherein the lamination order of red emission layer R and green emitted layer G can change, and the thickness of red emission layer R and green emitted layer G can differ from one another.
In one exemplary embodiment, target 40 can be made up of the material less than the work function of bottom electrode 20.
In one exemplary embodiment, the first organic light emission member 30 also can comprise electron transfer layer 33 and the electron injecting layer 34 between red emission layer R and target 40.
The first organic illuminating element 50 comprises bottom electrode 20, the first organic light emission member 30 and target 40.
The the second organic light emission member 60 that comprises blue emission layer B is formed on target 40.The second organic light emission member 60 also can comprise hole injection layer 61 and the hole transmission layer 62 between blue emission layer B and target 40.
The second organic light emission member 60 also can comprise electron transfer layer 63 and the electron injecting layer 64 between blue emission layer B and top electrode 70.
The second organic illuminating element 80 comprises target 40, the second organic light emission member 60 and top electrode 70.
Hereinafter, by the exemplary embodiment of the driving method of the exemplary embodiment of detailed description organic light emitting apparatus 500.
First,, in the time that voltage is applied to the target 40 of the second organic illuminating element 80 and top electrode 70, the utmost point and target 40 are respectively to the second organic light emission member 60 transmission electronics and hole from power on.
Be injected into electronics in the second organic light emission member 60 and hole compound to form exciton in the second organic light emission member 60.In blue emission layer B, exciton is got back to ground state, thus the transmitting short wavelength's corresponding with energy difference between excitation state and its ground state of exciton photon, and wherein, photon can be identified as visible ray.Therefore, in blue emission layer B, launch blue light.
Meanwhile, the top electrode 70 of being made up of reflectorized material and the target 40 of being made up of trnaslucent materials form microcavity.
Specifically, top electrode 70 forms microcavity, for improving the emission characteristics of the light producing at the second organic light emission member 60.
Strengthen near the transmitting of the light wavelength corresponding with the resonant wavelength of microcavity by target 40, and suppress the light of other wavelength., by utilizing the structure of top electrode 70 and target 40, the wavelength of desired scope can be adjusted, to have high reflectance, low transmissivity and low absorptivity.
More particularly, be included in the thickness of blue emission layer B, hole injection layer 61, hole transmission layer 62, electron transfer layer 63 and electron injecting layer 64 and the thickness of target 40 in organic light emission member 60 by control, can strengthen the light with specific wavelength.
Therefore,, owing to optionally launching the light with specific wavelength, therefore can improve the colorimetric purity of the light with specific wavelength band.
According to this exemplary embodiment of the present invention, by utilizing microcavity can improve from the colorimetric purity of the blue light of blue emission layer B transmitting.Thus, launch dark blue light from second organic radiated element 80 to first organic radiated element 50.
Meanwhile, when also applying voltage when driving the second organic illuminating element 80 to bottom electrode 20, the first organic illuminating element 50 is driven.In current exemplary embodiment, respectively from bottom electrode 20 and target 40 by hole and electronic injection to the first organic light emission member 30.
Be injected into electronics in the first organic light emission member 30 and hole and produce exciton, this and above-mentioned technique are similar.In addition, in red emission layer R and green emitted layer G, exciton is got back to ground state, thus utilizing emitted light.
Therefore, in red emission layer R and green emitted layer G, produce ruddiness and green glow respectively.
Meanwhile, owing to launching dark blue light from the second organic illuminating element 80, therefore ruddiness and green glow and the combination of dark blue light.
Therefore, by by all light of all launching towards transparent substrates 10, dark blue light, ruddiness and green glow combine to produce white light.
As mentioned above, by utilizing microcavity, in the case of not changing the material of blue emission layer B, can provide the dark blue light that colorimetric purity is high.Therefore,, even if use the traditional material of the blue emission layer of life-span of having had and relatively low emission effciency, also can improve the transmitting quality of organic light emitting apparatus.
In addition, owing to comprising the second organic illuminating element 80 of blue emission layer and comprising that the first organic illuminating element 50 of red emission layer and green emitted layer is driven individually, therefore can control the emission level (emission level) of the first organic illuminating element 50 and the second organic illuminating element 80.
Therefore, the brightness of the light by controlling the brightness of the light launched from the first organic illuminating element 50 and launch from the second organic illuminating element 80, can easily regulate the white chromaticity coordinates of organic light emitting apparatus 500.
According to current exemplary embodiment of the present invention, organic light emitting apparatus 500 is described with the blue emission layer B in the second organic light emission member 60, utilize microcavity effect to strengthen blue light.But optional exemplary embodiment comprises that wherein the emission layer of other color except blue emission layer can be included in the structure in the second organic illuminating element 80.
Hereinafter, will describe according to another exemplary embodiment of organic light emitting apparatus of the present invention.
Figure 28 shows according to the schematic diagram of another exemplary embodiment of organic light emitting apparatus of the present invention.
With reference to Figure 28, organic light emitting apparatus 600 comprises transparent substrates 10, bottom electrode 20, the first organic light emission member 30, target 40, the second organic light emission member 60 and top electrode 70.
The first organic light emission member 30 is placed between bottom electrode 20 and target 40, and comprises blue emission layer B, as shown in Figure 28 current exemplary embodiment.In one exemplary embodiment, the first organic light emission member 30 also can comprise hole injection layer 31 and/or the hole transmission layer 32 between blue emission layer B and bottom electrode 20.In addition, in one exemplary embodiment, the first organic light emission member 30 also can comprise electron transfer layer 33 and/or the electron injecting layer 34 between blue emission layer B and target 40.
Provide the first organic illuminating element 50, the first organic illuminating elements 50 to comprise bottom electrode 20, the first organic light emission member 30 and target 40.
The second organic light emission member 60 is placed between target 40 and top electrode 70, and comprises green emitted layer G and the red emission layer R of order lamination, as exemplary embodiment shown in Figure 28.In optional exemplary embodiment, can change the lamination order of green emitted layer G and red emission layer R.
In addition, in one exemplary embodiment, the second organic light emission member 60 also can comprise that hole injection layer 61 and/or hole transmission layer 62, the second organic light emission members 60 between intermediate layer 40 and green emitted layer G also can comprise electron transfer layer 63 and/or the electron injecting layer 64 between red emission layer R and top electrode 70.
Provide the second organic illuminating element 80, the second organic illuminating elements 80 to comprise target 40, the second organic light emission member 60 and top electrode 70.
Hereinafter, by the exemplary embodiment of the driving method of the exemplary embodiment of detailed description organic light emitting apparatus 600.
First, in the time that voltage is applied to the bottom electrode 20 of the first organic illuminating element 50 and target 40, from bottom electrode 20 and target 40 respectively to the first organic light emission member 30 transporting holes and electronics.
Be injected into electronics and hole in the first organic light emission member 30 compound in the first organic light emission member 30, to form exciton.In blue emission layer B, exciton is got back to ground state, thus utilizing emitted light.Therefore, in blue emission layer B, launch blue light.
A part for the blue light of launching in blue emission layer B is through the bottom electrode 20 of being made up of transparent material, and to launch towards transparent substrates 10, remaining blue light is through the target 40 of being made up of opaque material, to launch towards top electrode 70.
In the time that voltage is applied to top electrode 70, the second organic illuminating element 80 and the first organic illuminating element 50 are driven substantially simultaneously.Injected hole and electronics respectively from target 40 and top electrode 70 to the second organic light emission member 60.
Be injected into electronics and hole in the second organic illuminating element 80 compound in the second organic light emission member 60, to form exciton.In green emitted layer and red emission layer, exciton is got back to ground state, thus utilizing emitted light.Therefore, in green emitted layer G and red emission layer R, produce green glow and ruddiness respectively.Green glow and ruddiness are through the target 40 of being made up of semi-transparent conductor, to launch towards transparent substrates 10.
Meanwhile, the top electrode 70 of being made up of reflection conductor and the target 40 of being made up of semi-transparent conductor form microcavity.Microcavity in this exemplary embodiment of the present invention is substantially similar with the microcavity in the exemplary embodiment of describing with reference to Figure 27, in this description to it by omission.
In the exemplary embodiment of describing with reference to Figure 27, microcavity effect is applied to the light producing in the second organic luminous layer, but in this exemplary embodiment, microcavity effect is applied to the light producing in the first organic light emission member 30 and pass target 40.
Specifically, the microcavity forming by target 40 and top electrode 70, within the scope of specific wavelength band, strengthens the blue light that produces and pass target 40 in the first organic light emission member 30.
According in this exemplary embodiment of the present invention, in order optionally to improve the colorimetric purity of blue light, the second organic light emission member 60 and target 40 are formed as to the thickness of the light that can strengthen blue wavelength.
Therefore, the colorimetric purity of blue light increases, and dark blue light reflects towards transparent substrates 10 by the top electrode 70 of being made up of reflection conductor.
Green glow and ruddiness combination that dark blue light is launched from the second organic light emission member 60 together with the blue light of directly launching towards transparent substrates 10 from the first organic light emission member 30, to form white light.
Thus, transmitting white in transparent substrates 10.
By utilizing microcavity, can, in the case of not changing the material of blue emission layer B, provide the dark blue light that colorimetric purity is high.Therefore,, even utilize traditional material in the process of structure blue emission layer, also can improve the transmitting quality of organic light emitting apparatus.Can use life-span of having had and the traditional material of low emission effciency.
As mentioned above, comprise the organic illuminating element of green emitted layer and red emission layer and comprise that the organic illuminating element of blue emission layer is formed separately.By microcavity effect being applied to from the light of blue emission layer transmitting, can in the case of not changing the material of blue emission layer, improve the colorimetric purity of blue light.Therefore,, even construct blue emission layer with the traditional material of the life-span having had and low emission effciency, also can improve the transmitting quality of organic light emitting apparatus.
Although in conjunction with the current content description that is considered to actual exemplary embodiment the present invention, but should be appreciated that, the invention is not restricted to disclosed exemplary embodiment, but on the contrary, be intended to cover various changes and the equivalent arrangements in the spirit and scope that are included in claim.
Claims (10)
1. an organic light emitting apparatus, comprising:
Multiple have color pixel and a white pixel, and wherein, each pixel comprises:
The first electrode;
The second electrode, in the face of the first electrode;
Illuminated component, is placed between the first electrode and the second electrode;
White pixel also comprises the first translucent components, and the first translucent components is arranged on the first electrode to form microcavity with the second electrode.
2. organic light emitting apparatus as claimed in claim 1, wherein, the first translucent components is the combination of Ag, Al or Ag and Al.
3. organic light emitting apparatus as claimed in claim 1, wherein, illuminated component comprises that transmitting has the multiple sub-emission layer of light of different wave length, described in there is different wave length light be combined with transmitting white.
4. organic light emitting apparatus as claimed in claim 3, wherein, the first translucent components is only formed on the part place in the region that white light passes.
5. organic light emitting apparatus as claimed in claim 3, wherein, multiple coloured pixels comprise red pixel, green pixel and blue pixel, each colour filter that has color pixel also to comprise to be formed on below the first electrode.
6. organic light emitting apparatus as claimed in claim 3, wherein, also comprises the second translucent components in multiple pixels in having color pixel with minimum emission effciency, and the second translucent components is arranged on the first electrode, to form microcavity together with the second electrode.
7. organic light emitting apparatus as claimed in claim 6, wherein, the second translucent components is the combination of Ag, Al or Ag and Al.
8. organic light emitting apparatus as claimed in claim 6, wherein, the second translucent components is formed on the top, whole region that white light passes.
9. organic light emitting apparatus as claimed in claim 6, wherein, multiple coloured pixels comprise red pixel and green pixel, red pixel and green pixel also comprise the colour filter being formed on below the first electrode.
10. organic light emitting apparatus as claimed in claim 1, also comprises:
Drive thin-film transistor, be connected to the first electrode, and comprise poly semiconductor;
Switching thin-film transistor, is connected to driving thin-film transistor, and comprises amorphous semiconductor.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2006-0080847 | 2006-08-25 | ||
| KR1020060080847A KR20080018557A (en) | 2006-08-25 | 2006-08-25 | Organic light emitting diode device |
| KR1020060080847 | 2006-08-25 | ||
| KR10-2006-0098742 | 2006-10-11 | ||
| KR1020060098742A KR101367130B1 (en) | 2006-10-11 | 2006-10-11 | Organic light emitting diode display |
| KR1020060098742 | 2006-10-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101132020A CN101132020A (en) | 2008-02-27 |
| CN101132020B true CN101132020B (en) | 2014-06-25 |
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| CN200710147726.8A Active CN101132020B (en) | 2006-08-25 | 2007-08-27 | Organic light emitting device |
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| KR (1) | KR20080018557A (en) |
| CN (1) | CN101132020B (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102077386B (en) * | 2008-06-30 | 2012-07-18 | 佳能株式会社 | Light emitting display apparatus |
| JP5478954B2 (en) * | 2008-07-11 | 2014-04-23 | キヤノン株式会社 | Organic electroluminescence display device |
| KR20100033749A (en) | 2008-09-22 | 2010-03-31 | 삼성전자주식회사 | Organic light emitting diode display |
| KR20110040308A (en) * | 2009-10-14 | 2011-04-20 | 순천향대학교 산학협력단 | Light emitting device and display and lighting uint having the same |
| KR101884199B1 (en) | 2011-06-29 | 2018-08-02 | 삼성디스플레이 주식회사 | Light emitting structure, display device including a light emitting structure and method of manufacturing a display device including a light emitting structure |
| CN102270750A (en) * | 2011-07-26 | 2011-12-07 | 昆山维信诺显示技术有限公司 | Organic electroluminescent device, display equipment and manufacture method |
| KR101954984B1 (en) | 2012-09-25 | 2019-03-08 | 삼성디스플레이 주식회사 | Thin-film transistor array substrate, organic light emitting display device comprising the same and manufacturing method of the same |
| KR101990623B1 (en) | 2012-12-18 | 2019-10-01 | 삼성디스플레이 주식회사 | Pixel and Organic Light Emitting Display Device Using the same |
| KR101990312B1 (en) * | 2012-12-31 | 2019-06-18 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Display Device and Method for Manufacturing The Same |
| JP2014236099A (en) * | 2013-05-31 | 2014-12-15 | 株式会社ジャパンディスプレイ | Organic electroluminescent display device |
| KR102381626B1 (en) * | 2014-12-17 | 2022-04-01 | 엘지디스플레이 주식회사 | Organic light emitting display device |
| CN105161633B (en) | 2015-08-12 | 2018-02-06 | 京东方科技集团股份有限公司 | A kind of organic luminescent device |
| CN105493307B (en) * | 2015-10-29 | 2017-07-28 | 京东方科技集团股份有限公司 | A kind of organic LED structure and its manufacture method and related display panel and display device |
| CN105870354B (en) * | 2016-04-27 | 2018-05-04 | 京东方科技集团股份有限公司 | Organic electroluminescence device and preparation method thereof, display device |
| CN108630733B (en) | 2018-05-07 | 2020-12-25 | 京东方科技集团股份有限公司 | Display panel |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1729584A (en) * | 2002-11-13 | 2006-02-01 | Luxell技术有限公司 | Organic light emitting diode (OLED) with contrast enhancement features |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1729584A (en) * | 2002-11-13 | 2006-02-01 | Luxell技术有限公司 | Organic light emitting diode (OLED) with contrast enhancement features |
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| CN101132020A (en) | 2008-02-27 |
| KR20080018557A (en) | 2008-02-28 |
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