CN102270750A - Organic electroluminescent device, display equipment and manufacture method - Google Patents
Organic electroluminescent device, display equipment and manufacture method Download PDFInfo
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- CN102270750A CN102270750A CN2011102096838A CN201110209683A CN102270750A CN 102270750 A CN102270750 A CN 102270750A CN 2011102096838 A CN2011102096838 A CN 2011102096838A CN 201110209683 A CN201110209683 A CN 201110209683A CN 102270750 A CN102270750 A CN 102270750A
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Abstract
The invention provides an organic electroluminescent device, which comprises a substrate, a basal light emitting component and a semi-transparent layer, wherein the basal light emitting component comprises a transparent electrode layer, a reflection electrode layer and an organic layer arranged between the transparent electrode layer and the reflection electrode layer; at least one light emitting material is arranged in the organic layer; and the semi-transparent layer is arranged at the side of the transparent electrode layer of the basal light emitting component so that a micro-cavity is formed between the semi-transparent layer and the reflection electrode layer. The invention further provides organic electroluminescent display equipment, which comprises the organic electroluminescent device.
Description
Technical field
The present invention relates in general to ORGANIC ELECTROLUMINESCENCE DISPLAYS (OLED, Organic Electroluminescence Display) field, relates more specifically to have organic electroluminescence device, display device and the preparation method of micro-cavity structure.
Background technology
In recent years, the organic electroluminescent technology more and more is subjected to people's attention because of its plurality of advantages.
Typical organic electroluminescence device comprises two electrode layers and is arranged in organic layer between these two electrode layers.In use, device is applied voltage, electronics injects from an electrode, and the hole is injected from another electrode, and electronics and hole are compounded to form exciton in organic layer, and when exciton released energy, the luminescent material in the organic layer was luminous.
In actual applications, the luminescent material of different colours has different luminous efficiencies, promptly under identical driving voltage, the light that the material that luminous efficiency is lower sends a little less than.For example, compare with green (G) luminescent material with red (R) luminescent material, the luminous efficiency of blue (B) luminescent material is lower.Therefore, for the organic electroluminescence device that contains the RGB three-color light-emitting material, under identical driving voltage, the blue light of output than red light and green light a little less than, this impairs whole display effect.In addition, other factors---for example existence of filter---also can make the luminous efficiency difference of the zones of different of organic electroluminescence device.In addition, for a kind of concrete color, the colorimetric purity height of the light of output is favourable often.Many researchs show that all under suitable control, microcavity effect (microcavity effect) can make the light intensity of output and colorimetric purity all significantly improve.
Existing a kind of organic electroluminescence device comprises a reflecting electrode and a transparency electrode, and light forms microcavity from the output of transparency electrode one side between reflecting electrode and the transparency electrode.Yet, the microcavity effect that reflecting electrode and transparency electrode cause a little less than.If between reflecting electrode and semitransparent electrode, form microcavity,, can cause the multi-photon beam interferometer, thereby can cause stronger microcavity effect because light is strong in the reflection of transparency electrode in the reflectance of semitransparent electrode.
U.S. Pat 7888860B2 has proposed a kind of organic electroluminescence device with micro-cavity structure, wherein semitransparent electrode is disposed between first electrode and second electrode, join with first electrode and organic layer, and between the semitransparent electrode and second electrode, form microcavity.In this layout, require the work content (work function) of semitransparent electrode not only to mate but also mate, otherwise can't finish effective injection in electronics or hole, thereby influence the photoelectric properties of device with organic layer with first electrode.The material range of choice of semitransparent electrode that satisfies this requirement is narrower, can only select thin metal film for use usually.
Therefore, need a kind of like this organic electroluminescence device with micro-cavity structure, it can produce stronger microcavity effect, and the material range of choice of broad is arranged again.
Summary of the invention
According to an aspect of the present invention, provide a kind of organic electroluminescence device, having comprised: substrate; The basic luminescence member, it comprise transparent electrode layer, reflection electrode layer and be arranged in described transparent electrode layer and described reflection electrode layer between organic layer; And semitransparent layer, that side that it is arranged in the described transparent electrode layer place of described basic luminescence member makes to form microcavity between described semitransparent layer and described reflection electrode layer.
Alternatively, the mean transmissivity that described semitransparent layer satisfies visible light wave range (wavelength 380nm to 760nm) is 30% to 80%, is preferably 40% to 70%, more preferably is 50% to 60%.Alternatively, described mean transmissivity serves as to carry out at interval the transmitance sampling to ask the arithmetic mean value to obtain then with the 1nm wavelength in visible light wave range.
Alternatively, described basic luminescence member is arranged between described semitransparent layer and the described substrate.In the case, described substrate can be transparency carrier, translucent substrate or opaque substrate.
Alternatively, described semitransparent layer is arranged between described basic luminescence member and the described substrate, and described substrate is a transparency carrier.
Alternatively, described semitransparent layer is made by metal or alloy.Alternatively, described metal or alloy is selected from Ag, Al, Mg, Mo, Au, Ni and alloy thereof.Alternatively, the thickness of described semitransparent layer is 10nm to 40nm.
Alternatively, described semitransparent layer is made by the lamination of two or more different transparent materials of refractive index.Alternatively, described transparent material is selected from ITO, Si
3N
4, SiO
2, TiO
2, Al
2O
3And combination.Alternatively, the thickness of described semitransparent layer is 300nm to 600nm.Alternatively, each in described two or more transparent materials all satisfies at the thickness of 50nm to 300nm the mean transmissivity of visible light wave range (wavelength 380nm to 760nm) greater than 80%.Alternatively, described mean transmissivity serves as to carry out at interval the transmitance sampling to ask the arithmetic mean value to obtain then with the 1nm wavelength in visible light wave range.Alternatively, the transparent material that has largest refractive index in described two or more transparent materials and the difference of the refractive index of the transparent material with minimum refractive index are more than or equal to 0.4.
Alternatively, described semitransparent layer covers the whole zone of described transparent electrode layer.
Alternatively, described semitransparent layer only covers the part zone of described transparent electrode layer.Alternatively, described semitransparent layer only covers described transparent electrode layer and the low corresponding zone of luminous efficiency.
Alternatively, described semitransparent layer is to adopt PECVD method, sputtering method or the preparation of hot evaporation coating method.
Alternatively, described substrate is rigid substrates or flexible base, board.
Alternatively, described substrate is glass substrate, metal substrate, plastic base or TFT substrate.
According to another aspect of the present invention, provide a kind of organic electro-luminescence display device, it comprises above-mentioned organic electroluminescence device.
According to a further aspect of the invention, provide a kind of method for preparing organic electroluminescence device, may further comprise the steps: reflection electrode layer is set on substrate; Described reflection electrode layer is provided with the machine layer; On described organic layer, transparent electrode layer is set; And on described transparent electrode layer, semitransparent layer is set.In the case, described substrate can be transparency carrier, translucent substrate or opaque substrate.
According to a further aspect of the invention, provide a kind of method for preparing organic electroluminescence device, may further comprise the steps: semitransparent layer is set on substrate, and wherein said substrate is a transparency carrier; On described semitransparent layer, transparent electrode layer is set; Described transparent electrode layer is provided with the machine layer; And on described organic layer, reflection electrode layer is set.
Description of drawings
Fig. 1 is the generalized section according to the organic electroluminescence device of the first embodiment of the present invention;
Fig. 2 is the generalized section of organic electroluminescence device according to a second embodiment of the present invention;
Fig. 3 is the generalized section of the organic electroluminescence device of a third embodiment in accordance with the invention;
Fig. 4 is the generalized section of the organic electroluminescence device of a fourth embodiment in accordance with the invention;
Fig. 5 is the generalized section of organic electroluminescence device according to a fifth embodiment of the invention;
Fig. 6 is the spectrum comparison diagram of the organic electroluminescence device of no micro-cavity structure and organic electroluminescence device according to a second embodiment of the present invention.
In each accompanying drawing, back two identical labels are represented corresponding parts.For simplicity's sake, thickness of each layer and not drawn on scale.
Embodiment
Describe the specific embodiment of the present invention with reference to the accompanying drawings in detail, can more fully understand the present invention thus.
In the present invention, both can transparent electrode layer as anode, reflection electrode layer as negative electrode, also can transparent electrode layer as negative electrode, reflection electrode layer as anode, but semitransparent layer is not as electrode.
Fig. 1 is the generalized section according to the organic electroluminescence device 100 of the first embodiment of the present invention.
As shown in Figure 1, device 100 comprises substrate 110, basic luminescence member 120 and semitransparent layer 130 from bottom to top successively, and wherein basic luminescence member 120 comprises reflection electrode layer 121, organic layer 122 and transparent electrode layer 123 from bottom to top successively.Between semitransparent layer 130 and reflection electrode layer 121, form microcavity.
In the present embodiment, substrate 110 is a glass substrate, reflection electrode layer 121 is Ag (silver) layer, organic layer 122 is HIL (hole injection layer), HTL (hole transmission layer), EL (luminescent layer), ETL (electron transfer layer) and EIL (electron injecting layer) from bottom to top, transparent electrode layer 123 is ITO (indium tin oxide) layer, and semitransparent layer 130 is Al
2O
3/ AlN/Al
2O
3Lamination.In the present embodiment, the Ag layer is as anode, and the ITO layer is as negative electrode.In the present embodiment, the thickness of Ag layer is 150nm, and the thickness of ITO layer is 50nm, two Al
2O
3The thickness of layer all is 100nm, and the thickness of AlN layer is 50nm.
The preparation of device 100 is 3 * 10
-3Carry out in the vacuum environment of Pa, may further comprise the steps:
Adopt hot evaporation coating method that the Ag layer of 150nm is set on glass substrate;
Adopt evaporation coating method on the Ag layer, to set gradually HIL, HTL, EL, ETL and EIL;
Adopt sputtering method that the ITO layer of 50nm is set on the ETL layer; And
Adopt the PECVD method on the ITO layer, to set gradually the Al of 100nm
2O
3Layer, the AlN layer of 50nm and the Al of 100nm
2O
3Layer.
Further, can adopt for example conventional UV glue+glass cover package method to encapsulate.
Fig. 2 is the generalized section of organic electroluminescence device 200 according to a second embodiment of the present invention.
As shown in Figure 2, device 200 comprises from bottom to top successively: substrate 210, semitransparent layer 230 and basic luminescence member 220.Wherein basic luminescence member 220 comprises from bottom to top successively: transparent electrode layer 223, organic layer 222 and reflection electrode layer 221.Between semitransparent layer 230 and reflection electrode layer 221, form microcavity.
In the present embodiment, substrate 220 is a glass substrate, and semitransparent layer 230 is the Mo layer, and transparent electrode layer 223 is the ITO layer, and organic layer 222 is followed successively by HIL, HTL, EL, ETL and EIL from bottom to top, and reflection electrode layer 221 is the Al layer.In the present embodiment, the ITO layer is as anode, and the Al layer is as negative electrode.In the present embodiment, the thickness of Mo layer is 20nm, and the thickness of ITO layer is 100nm, and the thickness of Al layer is 100nm.
The preparation of device 200 is 3 * 10
-3Carry out in the vacuum environment of Pa, may further comprise the steps:
Adopt sputtering method that the Mo layer of 20nm is set on glass substrate;
Adopt sputtering method that the ITO layer of 100nm is set on the Mo layer;
Adopt hot evaporation coating method on the ITO layer, to set gradually HIL, HTL, EL, ETL and EIL; And
Adopt hot evaporation coating method that the Al layer of 100nm is set on EIL.
Further, can adopt for example conventional UV glue+glass cover package method to encapsulate.
Embodiment 3
Fig. 3 is the generalized section of the organic electroluminescence device 300 of a third embodiment in accordance with the invention.
As shown in Figure 3, device 300 comprises from bottom to top successively: substrate 310, semitransparent layer 330 and basic luminescence member 320.Wherein basic luminescence member 320 comprises from bottom to top successively: transparent electrode layer 323, organic layer 322 and reflection electrode layer 321.Between semitransparent layer 330 and reflection electrode layer 321, form microcavity.
In the present embodiment, substrate 320 is the TFT substrate, and semitransparent layer 330 is SiO
2/ SiN
3/ SiO
2/ SiN
3Lamination, transparent electrode layer 323 is the ITO layer, and organic layer 322 is followed successively by HIL, HTL, EL, ETL and EIL from bottom to top, and reflection electrode layer 321 is the Al layer.In the present embodiment, the ITO layer is as anode, and the Al layer is as negative electrode.In the present embodiment, two SiO
2The thickness of layer all is 100nm, two SiN
3The thickness of layer all is 50nm, and the thickness of ITO layer is 100nm, and the thickness of Al layer is 150nm.
The preparation of device 300 is 3 * 10
-3Carry out in the vacuum environment of Pa, may further comprise the steps:
Adopt sputtering method on the TFT substrate, to set gradually the SiO of 100nm
2The SiN of layer, 50nm
3The SiO of layer, 100nm
2The SiN of layer and 50nm
3Layer;
Adopt sputtering method at uppermost SiN
3The ITO layer of 100nm is set on the layer;
Adopt hot evaporation coating method on the ITO layer, to set gradually HIL, HTL, EL, ETL and EIL; And
Adopt hot evaporation coating method that the Al layer is set on EIL.
Further, can adopt for example conventional UV glue+glass cover package method to encapsulate.
Embodiment 4
Fig. 4 is the generalized section of the organic electroluminescence device 400 of a fourth embodiment in accordance with the invention.
As shown in Figure 4, device 400 comprises substrate 410, reflection electrode layer 421, organic layer 422, transparent electrode layer 423 and semitransparent layer 430 from bottom to top successively.The subregion is provided with redness (R), green (G) and blue (G) luminescent material in the organic layer 422.Wherein, semitransparent layer 430 zone corresponding of covering transparent electrode layer 423 only with blue emitting material.
Like this, under identical driving voltage, the microcavity effect in the zone corresponding with blue emitting material is stronger, has remedied the lower luminous efficiency of blue emitting material, thereby has improved whole display effect.
Embodiment 5
Fig. 5 is the generalized section of organic electroluminescence device 500 according to a fifth embodiment of the invention.
As shown in Figure 5, device 500 comprises substrate 510, semitransparent layer 530, transparent electrode layer 523, organic layer 522 and reflection electrode layer 521 from bottom to top successively.The subregion is provided with redness (R), green (G), blue (G) and white (W) luminescent material in the organic layer 522.Wherein, semitransparent layer 530 only covering transparent electrode layer 523 with red, green and the corresponding zone of blue emitting material.
The material and/or the structure that cover the semitransparent layer in the zone corresponding with redness, green and blue emitting material can be the same or different.
Comparative Examples
Fig. 6 is the organic electroluminescence device 600 (representing with side's point line style 1) of no micro-cavity structure and the spectrum comparison diagram of organic electroluminescence device 200 (representing with round dot line style 2) according to a second embodiment of the present invention.
The structure of device 600 is compared with the structure of device 200 and has only been lacked the Mo layer.
Can find out that from Fig. 6 device 200 is compared with device 600 has narrower half-peak breadth, this explanation has higher colorimetric purity.
Embodiment above is only as example of the present invention and unrestricted.It will be understood by those skilled in the art that also and can adopt other materials, thickness and preparation condition.Especially, the internal structure of semitransparent layer and organic layer can be according to actual needs and is different.Within the spirit and scope of the present invention, those skilled in the art can make many variants.
Claims (10)
1. organic electroluminescence device comprises:
Substrate;
The basic luminescence member, it comprise transparent electrode layer, reflection electrode layer and be arranged in described transparent electrode layer and described reflection electrode layer between organic layer; And
Semitransparent layer, that side that it is arranged in the described transparent electrode layer place of described basic luminescence member makes to form microcavity between described semitransparent layer and described reflection electrode layer.
2. organic electroluminescence device according to claim 1, wherein said basic luminescence member is arranged between described semitransparent layer and the described substrate.
3. organic electroluminescence device according to claim 1, wherein said semitransparent layer are arranged between described basic luminescence member and the described substrate, and described substrate is a transparency carrier.
4. according to each described organic electroluminescence device in the claim 1 to 3, wherein said semitransparent layer is made by metal or alloy, and preferably the thickness of described semitransparent layer is 10nm to 40nm.
5. according to each described organic electroluminescence device in the claim 1 to 3, wherein said semitransparent layer is made by the lamination of two or more different transparent materials of refractive index, and preferably the thickness of described semitransparent layer is 300nm to 600nm.
6. organic electroluminescence device according to claim 5, in wherein said two or more transparent materials each all satisfies at the thickness of 50nm to 300nm the mean transmissivity of visible light wave range greater than 80%, and/or have largest refractive index in described two or more transparent materials the difference of transparent material and the refractive index of transparent material with minimum refractive index more than or equal to 0.4.
7. according to each described organic electroluminescence device in the claim 1 to 3, wherein said semitransparent layer only covers a part of zone of described transparent electrode layer, and preferably described semitransparent layer only covers described transparent electrode layer and the low corresponding zone of luminous efficiency.
8. organic electro-luminescence display device, it comprises according to each described organic electroluminescence device in the claim 1 to 10.
9. method for preparing organic electroluminescence device may further comprise the steps:
Reflection electrode layer is set on substrate;
Described reflection electrode layer is provided with the machine layer;
On described organic layer, transparent electrode layer is set; And
On described transparent electrode layer, semitransparent layer is set.
10. method for preparing organic electroluminescence device may further comprise the steps:
Semitransparent layer is set on substrate, and wherein said substrate is a transparency carrier;
On described semitransparent layer, transparent electrode layer is set;
Described transparent electrode layer is provided with the machine layer; And
On described organic layer, reflection electrode layer is set.
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| CN103258969A (en) * | 2013-05-06 | 2013-08-21 | 深圳市华星光电技术有限公司 | White light organic light-emitting device |
| CN103972423A (en) * | 2014-05-08 | 2014-08-06 | 京东方科技集团股份有限公司 | OLED light-emitting device, manufacturing method thereof and display device |
| CN105098094A (en) * | 2015-07-20 | 2015-11-25 | 上海和辉光电有限公司 | Display panel and OLED element thereof |
| CN106298843A (en) * | 2015-06-25 | 2017-01-04 | 三星显示有限公司 | Organic light emitting diode display |
| CN107195797A (en) * | 2017-06-28 | 2017-09-22 | 京东方科技集团股份有限公司 | A kind of display base plate and display device |
| CN108598279A (en) * | 2018-04-24 | 2018-09-28 | 京东方科技集团股份有限公司 | Oled display substrate and preparation method thereof, display device |
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| WO2014180058A1 (en) * | 2013-05-06 | 2014-11-13 | 深圳市华星光电技术有限公司 | White organic light emitting device |
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| CN106298843A (en) * | 2015-06-25 | 2017-01-04 | 三星显示有限公司 | Organic light emitting diode display |
| CN105098094A (en) * | 2015-07-20 | 2015-11-25 | 上海和辉光电有限公司 | Display panel and OLED element thereof |
| CN107195797B (en) * | 2017-06-28 | 2019-11-01 | 京东方科技集团股份有限公司 | A kind of display base plate and display device |
| US11251409B2 (en) | 2017-06-28 | 2022-02-15 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display substrate and display device |
| CN107195797A (en) * | 2017-06-28 | 2017-09-22 | 京东方科技集团股份有限公司 | A kind of display base plate and display device |
| CN108598279A (en) * | 2018-04-24 | 2018-09-28 | 京东方科技集团股份有限公司 | Oled display substrate and preparation method thereof, display device |
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Application publication date: 20111207 |