CN101122742B - 超支化聚硅氧烷基光刻胶 - Google Patents

超支化聚硅氧烷基光刻胶 Download PDF

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CN101122742B
CN101122742B CN2007100186689A CN200710018668A CN101122742B CN 101122742 B CN101122742 B CN 101122742B CN 2007100186689 A CN2007100186689 A CN 2007100186689A CN 200710018668 A CN200710018668 A CN 200710018668A CN 101122742 B CN101122742 B CN 101122742B
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photoresist
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phenyl
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CN101122742A (zh
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范晓东
张国彬
孔杰
刘郁杨
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Northwestern Polytechnical University
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Abstract

本发明公开了一种超支化聚硅氧烷基光刻胶,为了克服现有光固化树脂粘度大、固化物无法转化为功能器件的不足,本发明提供了一种以超支化聚硅氧烷为基体树脂的光刻胶,成份为重量百分比为30~90的超支化聚硅氧烷、10~70的活性稀释剂和2~5的光引发剂。本发明含有甲基丙烯酰基团,具有低粘度、多官能度、高反应活性等特性,可快速光固化且固化物可转化为硅氧基陶瓷。

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超支化聚硅氧烷基光刻胶
技术领域
本发明属于高分子辐射化学领域,涉及一种光刻胶。
背景技术
随着微纳米科技的快速发展,利用UV-LIGA技术制备微/纳机电系统(M/NEMS)的方法已经得到长足的发展,以聚甲基丙烯酸甲酯(PMMA)和Su-8环氧树脂为代表的近紫外光刻胶在此领域中得到了广泛应用。随着微纳米加工技术向亚微米和纳米尺度的发展,193nm、157nm和更短波长的极短紫外光(EUV)光刻技术成为下一代光刻技术的发展方向,现有光刻胶由于在193nm和157nm吸收太高而无法使用,而聚甲基丙烯酸酯类物质由于在193nm高度透明成为193nm光刻胶的首选材料;研究表明:硅聚合物(如聚硅氧烷等)在157nm具有较好的透过性,因此聚甲基丙烯酸硅基酯类物质有可能用作下一代光刻胶。紫外光刻技术的发展还要求光刻胶向高性能、多功能化方向发展。高性能是指光固化树脂对紫外光具有高的辨识精度、固化速率快;多功能是指光固产物可通过进一步的化学或物理处理形成功能器件。现有的光刻胶由于粘度较大或为固态需要大量活性稀释剂或者溶剂进行稀释,而超支化聚合物由于其独特的分子结构使其具有携带众多官能团且粘度较低等特点,因而非常适合用作光固化树脂基体;此外,有机硅聚合物容易通过改性使其实现快速光固化并具有较高的辨识精度;因此可紫外光固化的超支化聚硅氧烷满足高性能的要求。现有的光刻胶均为有机物,无法进一步直接转化为功能器件,而可紫外光固化的超支化聚硅氧烷为半有机半无机聚合物,其固化物可以通过热解转化为硅氧基陶瓷器件,满足多功能化的要求。基于此,本发明设计合成了并以其为基体树脂制备新型多功能光刻胶。
发明内容
为了克服现有光固化树脂粘度大、固化物无法转化为功能器件的不足,本发明提供了一种以超支化聚硅氧烷为基体树脂的光刻胶。本发明含有甲基丙烯酰基团,具有低粘度、多官能度、高反应活性等特性,可快速光固化且固化物可转化为硅氧基陶瓷。
本发明提供的光刻胶配方如下所示(含量均为重量百分比):
超支化聚硅氧烷    30~90
活性稀释剂        10~70
光引发剂          2~5
其中所述的超支化聚硅氧烷具有如下图所示的化学结构,其重均分子量为10000~70000g/mol:
Figure S2007100186689D00021
所述的活性稀释剂为单官能度单体三甲基(甲基丙烯酰氧基乙氧基)硅烷和二官能度单体二甲基二(甲基丙烯酰氧基乙氧基)硅烷、二甲基(甲基丙烯酰氧基乙氧基)硅烷中的任一种或其任意比例的混合物。
所述的光引发剂为2-羟基-2-甲基-1-[(4-叔丁基)苯基]-1-丙酮(商品名IHT-PI 185)、2-羟基-2-甲基-1-[(4-羟乙氧基)苯基]-1-丙酮(商品名Darocur 2959)、2-羟基-2-甲基-1-[(4-异丙基)苯基]-1-丙酮(商品名Darocur 1116)和2-羟基-2-甲基-1-苯基-1-丙酮(商品名Darocur 1173)中的任意一种或其任意比例的混合物。
本发明的有益效果是:本发明提供的超支化聚硅氧烷具有较低的粘度,向其中添加较少量的活性稀释剂即可获得具有理想粘度的光刻胶;超支化聚合物还具有较多的官能团,因此具有较高的反应活性,以本发明提供的超支化聚硅氧烷为基体树脂的光刻胶可以在10~20s内实现紫外光引发固化;而且由于分子中引入了硅元素,因此本发明提供的光刻胶固化后其固化物具有优良的耐热性能,固化物玻璃化转变温度为20~90℃,5%热失重温度为240~275℃,600℃时残留率为10%~25%,而现有的PMMA光刻胶的5%热失重温度仅为100℃左右,600℃时残留率在10%以下,相比而言本发明提供的光刻胶具有较好的耐热性能。
具体实施方式
超支化聚硅氧烷基光刻胶实施例一:
2g超支化聚硅氧烷,0.5g单官能度单体和75mg光引发剂Darocur 1173在室温下避光磁力搅拌10min,即得光刻胶。
超支化聚硅氧烷基光刻胶实施例二:
2g超支化聚硅氧烷,1g二官能度单体和100mg光引发剂IHT-PI 185在室温下避光磁力搅拌10min,即得光刻胶。
超支化聚硅氧烷基光刻胶实施例三:
2g超支化聚硅氧烷,1g单官能度单体,50mg光引发剂IHT-PI 185和40mg光引发剂Darocur 1173在室温下避光磁力搅拌10min,即得光刻胶。
超支化聚硅氧烷基光刻胶实施例四:
2g超支化聚硅氧烷,0.6g单官能度单体,0.2g二官能度单体,30mg光引发剂Darocur1116和50mg光引发剂Darocur 2959在室温下避光磁力搅拌10min,即得光刻胶。

Claims (1)

1.一种超支化聚硅氧烷基光刻胶,其特征在于配方如下所示,下述各组分含量均为重量百分数,各组分重量百分数相加须等于100:
超支化聚硅氧烷    30~90
活性稀释剂        10~70
光引发剂          2~5
其中超支化聚硅氧烷具有如下图所示的化学结构,其重均分子量为10000~70000g/mol:
Figure FSB00000452371800011
其中活性稀释剂为单官能度单体三甲基(甲基丙烯酰氧基乙氧基)硅烷和二官能度单体二甲基二(甲基丙烯酰氧基乙氧基)硅烷、二甲基(甲基丙烯酰氧基乙氧基)硅烷中的任意一种或其任意比例的混合物;
其中光引发剂为2-羟基-2-甲基-1-[(4-叔丁基)苯基]-1-丙酮、2-羟基-2-甲基-1-[(4-羟乙氧基)苯基]-1-丙酮、2-羟基-2-甲基-1-[(4-异丙基)苯基]-1-丙酮和2-羟基-2-甲基-1-苯基-1-丙酮中的任意一种或其任意比例的混合物。
CN2007100186689A 2007-09-14 2007-09-14 超支化聚硅氧烷基光刻胶 Expired - Fee Related CN101122742B (zh)

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CN105278239A (zh) * 2014-05-30 2016-01-27 青岛科技大学 一种立体光刻快速成形聚硅氧烷基光敏树脂组合物及其制备方法和应用
CN105601830B (zh) * 2016-01-07 2018-10-02 中国科学院宁波材料技术与工程研究所 一种光固化材料及其应用
CN108676166B (zh) * 2018-07-04 2021-02-19 西北工业大学 用于增材制造技术制造陶瓷产品的光敏陶瓷前驱体制备方法
WO2022075361A1 (ja) * 2020-10-07 2022-04-14 大日本印刷株式会社 ケイ素含有レジスト用硬化性樹脂組成物、パターン形成方法、インプリントモールドの製造方法および半導体デバイスの製造方法
CN117003785A (zh) * 2022-04-29 2023-11-07 华为技术有限公司 一种支化型有机硅材料
CN118006291B (zh) * 2024-04-10 2024-07-02 临朐县金迪胶业有限公司 一种适用于光伏组件的耐湿热硅酮结构胶

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