CN101110370A - Radiating packaging structure and manufacturing method thereof - Google Patents
Radiating packaging structure and manufacturing method thereof Download PDFInfo
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- CN101110370A CN101110370A CNA2006101062871A CN200610106287A CN101110370A CN 101110370 A CN101110370 A CN 101110370A CN A2006101062871 A CNA2006101062871 A CN A2006101062871A CN 200610106287 A CN200610106287 A CN 200610106287A CN 101110370 A CN101110370 A CN 101110370A
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- heat sink
- semiconductor wafer
- interface layer
- package structure
- packing colloid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
Abstract
A heat dispersion encapsulation structure and its method are provided, which is characterized in that: place and connect a semiconductor wafer to a wafer bearing component; position a heat dispersion component with a interference face layer on its surface on the semiconductor wafer, so as to form a complete encapsulation glue body that wraps the semiconductor wafer and the heat dispersion component; then, cut the wafer bearing component and the encapsulation glue body according to the preset dimension of the encapsulation structure and form a bevel at the top brim of the encapsulation glue body, so as to partially expose the brim of the heat dispersion component; then, remove the encapsulation glue body on the interference face layer and form the encapsulation glue body that covers the interference face layer by keeping a spacing elevation between the encapsulation glue body and the top face of the interference face layer. Meanwhile, because the cutting path of the cutting operation does not pass the heat dispersion component, the invention is able to prevent the problem of flash and wearing of cutter due to the direct cutting of the heat dispersion component by the cutter, thus reducing the cutting cost.
Description
Technical field
The present invention relates to a kind of heat-radiation type package structure and method for making thereof, refer to semiconductor package of a kind of tool heat sink and preparation method thereof especially.
Background technology
Along with requirement to compactization of electronic product, integrate the semiconductor package part of the semiconductor wafer of high density electronic component and electronic circuit, become the main flow of encapsulating products gradually.Yet because this kind semiconductor package part is higher in the heat that running the time is produced, if immediately the heat of semiconductor wafer is not allayed fast, the heat that accumulates can have a strong impact on the electrical functionality and the product stability of semiconductor wafer.On the other hand, pollute for avoiding the packaging part internal circuit to be subjected to extraneous water dust, semiconductor wafer surface must outer cover a packing colloid and be completely cut off, but the potting resin that constitutes this packing colloid but is the very poor material of a heat conductivity, its thermal conductivity coefficient is 0.8w/m-K only, and therefore, the heat that is produced during the semiconductor wafer running effectively this packing colloid of mat is delivered to outside the atmosphere, produce, make and enjoy test in wafer property and useful life and cause heat to accumulate phenomenon.Therefore, for improving the radiating efficiency of semiconductor package part, there is the conception of in packaging part, setting up heat sink to arise at the historic moment then.
See also shown in Figure 1ly, be United States Patent (USP) the 5th, 726, No. 079 disclosed semiconductor package part.This kind conventional semiconductor packages part 1 is the directly sticking fin 11 that is provided with on wafer 10, the end face 11a of this fin 11 is exposed outside in order to the packing colloid 12 that coats this wafer 10 directly to be contacted with atmosphere, use the heat that provides wafer 10 to produce can be passed to fin 11 and loss to atmosphere, and needn't be through the packing colloid 12 of poor thermal conductivity.
Yet this kind semiconductor package part 1 has some shortcomings on making.At first, after this fin 11 and wafer 10 are bonding, when inserting in the die cavity of encapsulating mould with the molding operation (Molding) that forms this packing colloid 12, the necessary contact of the end face 11a of this fin 11 is to the roof of die cavity, otherwise promptly can make packing colloid overflow glue on the end face 11a of fin 11, like this except that meeting influences the radiating efficiency of this fin 11, and can cause manufactured goods apparent bad, so the processing of often must remove photoresist (Deflash); Yet the processing of removing photoresist is not only consuming time, increases packaging cost, and also can cause the impaired of manufactured goods.Relatively, excessive if fin 11 contacts are lived the strength of roof of die cavity, then tend to make matter crisp wafer 10 because of excessive pressure rhegma.
In addition, can just equal the degree of depth of the die cavity of mould to the distance of the upper surface of substrate 13 for the end face 11a that makes fin 11, fin 11 is precisely control and making with bonding, the wafer 10 of wafer 10 with the thickness of the bonding and fin 11 of substrate 13, requirement on right this kind precision, packaging cost is increased and raising manufacture method complexity, so the difficulty of its enforcement is arranged actually.
See also Fig. 2 A to 2C and shown in Figure 3, disappearance in view of aforementioned prior art, United States Patent (USP) the 6th, 458,626 and 6,444, No. 498 cases (patentee is same as the applicant of the application's case) disclose a kind of fin and can directly glue and place on the wafer and can not produce the semiconductor package part that crushing wafer or excessive glue are formed at the problem on the fin exposed surface.This semiconductor package part be fin 21 desire to expose to form on the surface in the atmosphere one and the bad adhesion of 24 of packing colloids or and the interface layer 25 of the bad adhesion of 21 of fin, place one to connect and put on the wafer 20 of substrate 23 with this fin 21 is directly sticking again, thereby carry out molding then and coat this fin 21 and wafer 20 fully with packing colloid 24, and packing colloid 24 is covered on the interface layer 25 of fin 21 (shown in 2A figure), so, the degree of depth of the die cavity of the employed mould of molding be greater than the thickness of wafer 20 and fin 21 and, so behind the mould matched moulds, mould can not touch fin 21 and make wafer 20 no pressurizeds cause the possibility of rhegma; Then, carry out cutting step (shown in 2B figure), and the packing colloid 24 of fin 21 tops removed, when wherein the caking property of 21 of interface layer on being formed at fin 21 25 (for example for Gold plated Layer) and fin is greater than the caking property of 24 of itself and packing colloids, after packing colloid 24 divested, this interface layer 25 still retains on the fin 21, but bad adhesion because of 24 of interface layer 25 and packing colloids, packing colloid 24 is unlikely to residue in (shown in 2C figure) on the fin 21, so there is not the problem of the glue that overflows.Relatively, the caking property that interface layer 25 on being formed at fin 21 (for example sheet adhesive of making for the pi resin) and fin are 21 is during less than the caking property of 24 of itself and packing colloids, after packing colloid 24 divested, this interface layer 25 can stick on the packing colloid 24 and remove (as shown in Figure 3) thereupon, so also can not form excessive glue on this fin 21.
But in aforesaid semiconductor package part manufacture method, when carrying out cutting step, because of cutting tool continues cutting by this heat sink, and because this heat sink is generally the metal material as copper, aluminium, when therefore cutting, all will make the periphery material of heat sink influence the packaging part outward appearance, also cause the cutting tool loss too big simultaneously because of pullling the irregular sharp edge of generation (or claiming burr) with the diamond cutter, cause cost significantly to improve, and production efficiency more can't improve in a large number.
Therefore, how to provide a kind of and weigh semiconductor wafer wounded and the glue that overflows in that encapsulation is unlikely during molding, can reduce the heat-radiation type package structure and the method for making of cutting tool attrition simultaneously, real problem for needing to be resolved hurrily at present.
Summary of the invention
The shortcoming of prior art in view of the above, main purpose of the present invention is to provide a kind of heat-radiation type package structure and method for making thereof, is unlikely to weigh semiconductor wafer in the encapsulation mold process wounded or the glue problem of overflowing takes place, and then promotes the acceptance rate of manufactured goods.
A further object of the present invention is to provide a kind of heat-radiation type package structure and method for making thereof, avoided when carrying out cutting step, cutting tool be cut to heat sink the burr problem and cutter consume problem that easily produce, and then reduction cutting cost.
For taking off on reaching and other purpose, the method for making of heat-radiation type package structure of the present invention comprises: semiconductor wafer connects and puts and be electrically connected on the chip carrier at least; One surface connect with the heat sink of interface layer place on this semiconductor wafer; Encapsulate molding, so that complete semiconductor wafer and this heat sink that is positioned on this chip carrier that envelope of packing colloid with interface layer; Cut along this chip carrier and packing colloid periphery according to semiconductor package preliminary dimension; Form the oblique angle at this packing colloid apical margin, expose outside this heat sink edge with interface layer with the part; And remove operation, to remove the packing colloid that is positioned on the interface layer.The material of this interface layer may be selected to be and the engaging force of the packing colloid engaging force greater than itself and heat sink, for example be film, epoxy resin or organic layer, thereby when removing operation, remove this interface layer and the packing colloid that is positioned on this interface layer simultaneously, use and directly expose outside this heat sink surface, to derive the semiconductor wafer heat.Moreover, the material of this interface layer also may be selected to be and the engaging force of the heat sink engaging force greater than itself and packing colloid, for example be metal levels such as gold or nickel, thereby when removing operation, be positioned at the packing colloid on this interface layer and expose outside this interface layer from removing on this interface layer, use the heat that semiconductor wafer is produced and be able to by heat sink and interface layer loss to extraneous.
By aforementioned method for making, the present invention also discloses a kind of heat-radiation type package structure, comprising: chip carrier; Semiconductor wafer connects and puts and be electrically connected on this chip carrier; Heat sink connects and places on this semiconductor wafer; Packing colloid is formed on this chip carrier, in order to coating this semiconductor wafer and heat sink, and is formed with the oblique angle at the apical margin of this packing colloid around around this heat sink, and makes the upper surface of this heat sink expose outside this packing colloid.
This chip carrier can adopt ball grid array (BGA) substrate or planar lattice array (LGA) substrate, and this semiconductor wafer can cover crystalline substance or routing mode and be electrically connected to this chip carrier, wherein, when crystal type electric connection wafer and chip carrier are covered in employing, can directly the heat sink with interface layer be connect the non-active surface that places this wafer, relatively when adopting the routing mode to electrically connect wafer and chip carrier, can be prior to after not influencing the bonding wire placement on this wafer active surface and connecing the intermediate layer of putting just like useless wafer or heat sink, on this intermediate layer, connect again and put this heat sink with interface layer, touch to bonding wire with the bonding meeting of avoiding heat sink and semiconductor wafer, simultaneously the heat that can be produced in order to the loss semiconductor wafer.
Therefore, chip carrier is followed and be electrically connected to heat-radiation type package structure of the present invention and method for making thereof mainly with semiconductor wafer, and on this semiconductor wafer, be formed with a heat sink with interface layer, form one again in order to coat this semiconductor wafer and with the packing colloid of the heat sink of interface layer, wherein the end face of this packing colloid and this interface layer end face are possessed an interval height to form the packing colloid that covers this interface layer, use and avoid existing encapsulating mould to press on the crushing problem that semiconductor wafer produces, then cut this packing colloid and chip carrier periphery according to the predetermined package dimensions that forms, afterwards by for example mode of grinding, to form the oblique angle on every side around this heat sink at this packing colloid apical margin, use the part and expose outside this heat sink edge with interface layer, thereby be convenient to directly should directly removing packing colloid unnecessary on this interface layer in the interface layer position for follow-up, therefore also do not have excessive glue problem, wherein this interface layer can remove or carry over together with unnecessary packing colloid; Moreover in the present invention because cutting tool only is cut to packing colloid and chip carrier, the burr problem that therefore can avoid existing cutting tool directly to be cut to heat sink being produced is consumed problem with cutter, and then is minimized cutting cost.
Description of drawings
Fig. 1 is a United States Patent (USP) the 5th, 726, No. 079 disclosed semiconductor package part generalized section of case;
Fig. 2 A to 2C is a United States Patent (USP) the 6th, 458, No. 626 disclosed semiconductor package part generalized sections of case;
Fig. 3 is a United States Patent (USP) the 6th, 444, No. 498 disclosed semiconductor package part generalized sections of case;
Fig. 4 A, 4F are the schematic diagram of heat-radiation type package structure of the present invention and method for making first embodiment thereof;
Fig. 5 A, 5B are the schematic diagram of heat-radiation type package structure second embodiment of the present invention;
Fig. 6 is the generalized section of heat-radiation type package structure the 3rd embodiment of the present invention; And
Fig. 7 A, 7B are the generalized section of heat-radiation type package structure the 4th embodiment of the present invention.
The main element symbol description
1 semiconductor package part
10,20 semiconductor wafers
11,21 fin
The 11a end face
12,24 packing colloids
23 substrates
25 interface layer
26 adhesion coatings
41 semiconductor wafers
410 conductive projections
42 chip carriers
43 interface layer
44 heat sinks
45,45 ' packing colloid
54 heat sinks
55 packing colloids
61 semiconductor wafers
63 interface layer
64 heat sinks
65,65 ' packing colloid
71 semiconductor wafers
72 chip carriers
73 interface layer
74 heat sinks
75 packing colloids
76 bonding wires
77 intermediate layers
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this specification disclosed.
[first embodiment]
See also Fig. 4 A, 4F, be the schematic diagram of heat-radiation type package structure of the present invention and method for making first embodiment thereof.
Shown in Fig. 4 A, at first, semiconductor wafer 41 connect put and be electrically connected on the chip carrier 42, simultaneously a surface is placed on this semiconductor wafer 41 for connecing the surface of putting with chip carrier 42 with the heat sink 44 of interface layer 43 side joint with this heat sink 44.The planar dimension of this heat sink does not surpass the semiconductor package planar dimension that institute's desire forms.
This wafer carrier 42 for example is ball grid array (BGA) substrate or planar lattice array (LGA) substrate, and this semiconductor wafer 41 for example is the crystal covering type semiconductor wafer, and this crystal covering type semiconductor wafer by a plurality of conductive projections 410 its active surface is electrically connected to this chip carrier 42.
This interface layer 43 can be for example for be pasted on the heat sink 44 pi (Polyimide) for the film of ground (P.I.tape) coat the epoxy resin (epoxy) on the heat sink 44 or be formed on the heat sink 44 as wax organic layers such as (wax), use make this interface layer 43 with follow-up in order to the packing colloid zygosity that coats this semiconductor wafer 41 greater than the zygosity of this interface layer 43 with this heat sink 44, remove on this heat sink and in the end must and go up unnecessary packing colloid this interface layer.
Shown in Fig. 4 B, this is connect in the die cavity (not shown) that is equipped with semiconductor wafer 41 and inserts encapsulating mould with the chip carrier 42 of the heat sink 44 of interface layer 43 carry out molding operation, on chip carrier 42, to form one in order to coat this with the heat sink 44 of interface layer 43 and the packing colloid 45 of semiconductor wafer 41.Between roof one suitable distance is arranged owing to height that is somebody's turn to do the heat sink 44 of having interface layer 43 and die cavity, so behind the encapsulating mould matched moulds, semiconductor wafer 41 can not suffer encapsulating mould and next pressure, so possibility of no rhegma, and the bonding needs that also do not have accurate control height of heat sink 44 and wafer 41 are so can effectively promote the acceptance rate and the reliability of manufactured goods.
Shown in Fig. 4 C, carry out cutting operation, according to the predetermined encapsulating structure size that forms, to cut this chip carrier 42 and packing colloid 45 peripheries.In addition because the cutting path of this cutting operation only cuts this packing colloid 45 and chip carrier 42 along semiconductor package preliminary dimension position, therefore can avoid existing cutting tool directly to be cut to burr problem and cutter consume problem that heat sink 44 is produced, and then be minimized cutting cost.
Shown in Fig. 4 D, by as modes such as grinding operations to form the oblique angle at these packing colloid 45 apical margins and around around this heat sink 44, use the part and expose outside this heat sink 44 edges with interface layer 43, for example grind packing colloid 45 in the present embodiment to these heat sink 44 top corner edge, so that follow-up removing is positioned at unnecessary packing colloid on this interface layer 43.
Shown in Fig. 4 E, remove operation, to remove the packing colloid 45 ' that is positioned on the interface layer 43, in addition, because the engaging force of the material (for example be film, epoxy resin or organic layer) of this interface layer 43 and packing colloid 45 is greater than the engaging force of itself and heat sink 44, therefore when removing operation, this interface layer 43 and the packing colloid 45 ' that is positioned on this interface layer 43 will be removed simultaneously, use and directly expose outside this heat sink 44 end faces, shown in Fig. 4 F (this Fig. 4 F is the vertical view of Fig. 4 E), and then derive semiconductor wafer 41 heats.
By aforesaid method for making, the present invention also discloses a kind of semiconductor package, comprising: chip carrier 43; Semiconductor wafer 41 can cover crystalline substance side and connects and put and be electrically connected on this chip carrier 42 by leading; Heat sink 44 connects and places on this semiconductor wafer 41; Packing colloid 45, be formed on this chip carrier 42, in order to coating this semiconductor wafer 41 and heat sink 44, and be formed with the oblique angle around around this heat sink 44, and make the upper surface of this heat sink 44 expose outside this packing colloid 45 at the apical margin of this packing colloid 45.
[second embodiment]
See also Fig. 5 A, 5B (this Fig. 5 B is the vertical view of Fig. 5 A), be section and the end face schematic diagram of heat-radiation type package structure second embodiment of the present invention.Method for making and aforementioned method for making at the heat-radiation type package structure of second embodiment of the invention are roughly the same, its main difference is being utilized as modes such as grinding operations when packing colloid 55 apical margins form the oblique angle, grind this packing colloid 55 and extend to this heat sink 54, thereby be convenient to follow-uply remove the interface layer of being located at the heat sink surface and be positioned at packing colloid unnecessary on this interface layer.
[the 3rd embodiment]
See also Fig. 6, generalized section for made semiconductor package the 3rd embodiment of the aforesaid heat-radiation type package structure method for making of reference the present invention, its difference is in the semiconductor package of present embodiment, interface layer 63 materials that invest heat sink 64 surfaces are chosen as engaging force with heat sink 64 greater than the engaging force of this interface layer 63 with packing colloid 65 ', for example be metal levels such as gold or nickel, thereby finish cutting operation along predetermined encapsulating structure size, and after packing colloid 65 apical margins grind the formation oblique angle, and when removing operation, be able to the packing colloid 65 ' that is positioned on this interface layer 63 from removing on this interface layer 63, and then make this interface layer 63 expose outside packing colloid 65, use the heat that produces for semiconductor wafer 61 and be able to by this heat sink 64 and interface layer 63 loss to extraneous.
[the 4th embodiment]
See also Fig. 7 A, 7B, generalized section for made semiconductor package the 4th embodiment of the aforesaid heat-radiation type package structure method for making of reference the present invention, its difference is in to be a routing type semiconductor wafer 71 connect in the semiconductor package of present embodiment and places on the chip carrier 72, wherein this semiconductor wafer 71 connects with its non-active surface and places this chip carrier 72, and be electrically connected to this chip carrier 72 by a plurality of bonding wires 76, and on these semiconductor wafer 71 active surfaces, can connect the intermediate layer 77 that is equipped with as useless wafer or heat sink, on this intermediate layer 77, to connect the heat sink 74 that is equipped with attached interface layer 73, wherein the engaging force that may be selected to be with packing colloid 75 of this interface layer 73 engages power (as film greater than this interface layer 73, epoxy resin or organic layer etc.), thereby when removing operation, remove this interface layer and the packing colloid that is positioned on this interface layer simultaneously, use making heat sink 74 expose outside this semiconductor wafer (shown in Fig. 7 A); Also or the material of this interface layer 73 may be selected to be with the engaging force of heat sink 74 greater than the engaging force (as metal levels such as gold or nickel) of this interface layer 73 with packing colloid 75, thereby when removing operation, on this interface layer 73, remove packing colloid and expose outside this interface layer 73 (shown in Fig. 7 B).
Therefore, chip carrier is followed and be electrically connected to heat-radiation type package structure of the present invention and method for making thereof mainly with semiconductor wafer, and on this semiconductor wafer, be formed with a heat sink with interface layer, form one again in order to coat this semiconductor wafer and with the packing colloid of the heat sink of interface layer, wherein the end face of this packing colloid and this interface layer end face are possessed an interval height to form the packing colloid that covers this interface layer, use and avoid existing encapsulating mould to press on the crushing problem that semiconductor wafer produces, then cut this packing colloid and chip carrier periphery according to the predetermined package dimensions that forms, see through the mode of grinding afterwards by for example, to form the oblique angle on every side around this heat sink at this packing colloid apical margin, use the part and expose outside this heat sink edge with interface layer, thereby be convenient to directly should directly removing packing colloid unnecessary on this interface layer in the interface layer position for follow-up, therefore also do not have excessive glue problem, wherein this interface layer can remove or carry over together with unnecessary packing colloid; Moreover in the present invention because cutting tool only is cut to packing colloid and chip carrier, the burr problem that therefore can avoid existing cutting tool directly to be cut to heat sink being produced is consumed problem with cutter, and then is minimized cutting cost.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention.Especially not should be specifically noted that the person, the selection of this chip carrier, and the employing of the electric connection mode of wafer and chip carrier, any those skilled in the art all can be under spirit of the present invention and category, and the foregoing description is modified and changed.Therefore, the scope of the present invention, claims scope is listed as described later.
Claims (23)
1. heat-radiation type package structure method for making comprises:
At least semiconductor wafer connects and puts and be electrically connected on the chip carrier;
One surface connect with the heat sink of interface layer place on this semiconductor wafer;
Encapsulate molding operation, so that complete semiconductor wafer and this heat sink that is positioned on this chip carrier that envelope of packing colloid with interface layer;
Cut along this chip carrier and packing colloid periphery according to encapsulating structure preliminary dimension;
Form the oblique angle at this packing colloid apical margin, expose outside this heat sink edge with interface layer with the part; And
Remove operation, to remove the packing colloid that is positioned on the interface layer.
2. according to the described heat-radiation type package structure method for making of claim 1, wherein, this chip carrier is one of them of ball grid array (BGA) substrate and planar lattice array (LGA) substrate.
3. according to the described heat-radiation type package structure method for making of claim 1, wherein, this semiconductor wafer is the crystal covering type semiconductor wafer, and this crystal covering type semiconductor wafer by a plurality of conductive projections so that its active surface is electrically connected to this chip carrier.
4. according to the described heat-radiation type package structure method for making of claim 1, wherein, this interface layer and this packing colloid zygosity be greater than the zygosity of this interface layer and this heat sink, thereby when removing operation, must and go up unnecessary packing colloid with this interface layer and remove on this heat sink.
5. according to the described heat-radiation type package structure method for making of claim 4, wherein, this interface layer be pasted on pi (Polyimide) on the heat sink for the film of ground (P.I.tape), coat the epoxy resin on the heat sink and be formed at one of them of organic layer on the heat sink.
6. according to the described heat-radiation type package structure method for making of claim 1, wherein, the engaging force of this interface layer and this heat sink is greater than the engaging force of this interface layer and this packing colloid, thereby when removing operation, be able on this interface layer, remove the packing colloid that is positioned on this interface layer, and then make this interface layer expose outside packing colloid.
7. according to the described heat-radiation type package structure method for making of claim 6, wherein, this interface layer is a metal level.
8. according to the described heat-radiation type package structure method for making of claim 1, wherein, utilize grinding operation forming the oblique angle, and this grinding operation is to grind this packing colloid to exposing this heat sink top corner edge at this packing colloid apical margin.
9. according to the described heat-radiation type package structure method for making of claim 1, wherein, utilize grinding operation forming the oblique angle, and this grinding operation is to grind this packing colloid and extend to this heat sink at this packing colloid apical margin.
10. according to the described heat-radiation type package structure method for making of claim 1, wherein, this semiconductor wafer is the routing type semiconductor wafer, this routing type semiconductor wafer has an active surface and relative non-active surface, and connect with its non-active surface and to place this chip carrier, to be electrically connected to this chip carrier by a plurality of bonding wires.
11., wherein, connect on this semiconductor wafer active surface and be equipped with the intermediate layer, and on this intermediate layer, connect the heat sink that is equipped with attached interface layer according to the described heat-radiation type package structure method for making of claim 10.
12. according to the described heat-radiation type package structure method for making of claim 11, wherein, this intermediate layer is one of them of useless wafer and heat sink.
13. according to the described heat-radiation type package structure method for making of claim 1, wherein, the planar dimension of this heat sink does not surpass the predetermined plane size of encapsulating structure.
14. a heat-radiation type package structure comprises:
Chip carrier;
Semiconductor wafer connects and puts and be electrically connected on this chip carrier;
Heat sink connects and places on this semiconductor wafer; And
Packing colloid is formed on this chip carrier, in order to coating this semiconductor wafer and heat sink, and is formed with the oblique angle at the apical margin of this packing colloid around around this heat sink, and make this heat sink surface exposedly go out this packing colloid.
15. according to the described heat-radiation type package structure of claim 14, wherein, this chip carrier is one of them of ball grid array (BGA) substrate and planar lattice array (LGA) substrate.
16. according to the described heat-radiation type package structure of claim 14, wherein, this semiconductor wafer is the crystal covering type semiconductor wafer, and this crystal covering type semiconductor wafer by a plurality of conductive projections so that its active surface is electrically connected to this chip carrier.
17., comprise that again one is formed at the interface layer of this heat sink upper surface, and this interface layer is for exposing outside packing colloid according to the described heat-radiation type package structure of claim 14.
18. according to the described heat-radiation type package structure of claim 17, wherein, this interface layer is a metal level.
19. according to the described heat-radiation type package structure of claim 14, wherein, this oblique angle utilizes lapping mode to form, and is ground to and exposes this heat sink top corner edge.
20. according to the described heat-radiation type package structure of claim 14, wherein, this oblique angle utilizes lapping mode to form, and grinding extends to this heat sink.
21. described heat-radiation type package structure according to claim 14, wherein, this semiconductor wafer is the routing type semiconductor wafer, this routing type semiconductor wafer has an active surface and relative non-active surface, and connect with its non-active surface and to place this chip carrier, to be electrically connected to this chip carrier by a plurality of bonding wires.
22. according to the described heat-radiation type package structure of claim 21, wherein, connect on this semiconductor wafer active surface and be equipped with the intermediate layer, and on this intermediate layer, connect and put this heat sink.
23. according to the described heat-radiation type package structure of claim 22, wherein, this intermediate layer is one of them of useless wafer and heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101062871A CN101110370A (en) | 2006-07-17 | 2006-07-17 | Radiating packaging structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101062871A CN101110370A (en) | 2006-07-17 | 2006-07-17 | Radiating packaging structure and manufacturing method thereof |
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| CN101110370A true CN101110370A (en) | 2008-01-23 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101635284B (en) * | 2008-07-24 | 2011-08-03 | 环旭电子股份有限公司 | Wafer packaging structure |
| CN104377179A (en) * | 2013-08-15 | 2015-02-25 | 日月光半导体制造股份有限公司 | Semiconductor packaging piece and manufacturing method thereof |
-
2006
- 2006-07-17 CN CNA2006101062871A patent/CN101110370A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101635284B (en) * | 2008-07-24 | 2011-08-03 | 环旭电子股份有限公司 | Wafer packaging structure |
| CN104377179A (en) * | 2013-08-15 | 2015-02-25 | 日月光半导体制造股份有限公司 | Semiconductor packaging piece and manufacturing method thereof |
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