CN101083302A - 一种结合压印技术制备各向异性有机场效应管的方法 - Google Patents
一种结合压印技术制备各向异性有机场效应管的方法 Download PDFInfo
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- CN101083302A CN101083302A CN 200610012052 CN200610012052A CN101083302A CN 101083302 A CN101083302 A CN 101083302A CN 200610012052 CN200610012052 CN 200610012052 CN 200610012052 A CN200610012052 A CN 200610012052A CN 101083302 A CN101083302 A CN 101083302A
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000005669 field effect Effects 0.000 title claims abstract description 23
- 238000005516 engineering process Methods 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 238000000427 thin-film deposition Methods 0.000 claims description 2
- 230000008016 vaporization Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
- 238000005459 micromachining Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2006100120526A CN100544053C (zh) | 2006-05-31 | 2006-05-31 | 一种结合压印技术制备各向异性有机场效应管的方法 |
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CNB2006100120526A CN100544053C (zh) | 2006-05-31 | 2006-05-31 | 一种结合压印技术制备各向异性有机场效应管的方法 |
Publications (2)
Publication Number | Publication Date |
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CN101083302A true CN101083302A (zh) | 2007-12-05 |
CN100544053C CN100544053C (zh) | 2009-09-23 |
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CNB2006100120526A Active CN100544053C (zh) | 2006-05-31 | 2006-05-31 | 一种结合压印技术制备各向异性有机场效应管的方法 |
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CN (1) | CN100544053C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100585904C (zh) * | 2007-12-12 | 2010-01-27 | 中国科学院微电子研究所 | 一种制备有机场效应晶体管的方法 |
CN107451520A (zh) * | 2017-04-05 | 2017-12-08 | 王开安 | 超声波指纹识别组件电极图案的制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7455955B2 (en) * | 2002-02-27 | 2008-11-25 | Brewer Science Inc. | Planarization method for multi-layer lithography processing |
JP4154595B2 (ja) * | 2003-05-28 | 2008-09-24 | ダイキン工業株式会社 | インプリント加工用金型およびその製造方法 |
TWI366218B (en) * | 2004-06-01 | 2012-06-11 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
CN100499200C (zh) * | 2004-09-02 | 2009-06-10 | 财团法人工业技术研究院 | 高精度印刷法制作有机薄膜晶体管的方法 |
-
2006
- 2006-05-31 CN CNB2006100120526A patent/CN100544053C/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100585904C (zh) * | 2007-12-12 | 2010-01-27 | 中国科学院微电子研究所 | 一种制备有机场效应晶体管的方法 |
CN107451520A (zh) * | 2017-04-05 | 2017-12-08 | 王开安 | 超声波指纹识别组件电极图案的制备方法 |
Also Published As
Publication number | Publication date |
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CN100544053C (zh) | 2009-09-23 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130418 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130418 |
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Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20130418 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |