CN100585904C - 一种制备有机场效应晶体管的方法 - Google Patents
一种制备有机场效应晶体管的方法 Download PDFInfo
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- CN100585904C CN100585904C CN200710179352A CN200710179352A CN100585904C CN 100585904 C CN100585904 C CN 100585904C CN 200710179352 A CN200710179352 A CN 200710179352A CN 200710179352 A CN200710179352 A CN 200710179352A CN 100585904 C CN100585904 C CN 100585904C
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 230000005669 field effect Effects 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000001704 evaporation Methods 0.000 claims abstract description 42
- 230000008020 evaporation Effects 0.000 claims abstract description 41
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 27
- 238000004528 spin coating Methods 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000001259 photo etching Methods 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims description 34
- 238000005516 engineering process Methods 0.000 claims description 22
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 5
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000011368 organic material Substances 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 22
- 230000006378 damage Effects 0.000 abstract description 5
- 239000012044 organic layer Substances 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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- 238000010025 steaming Methods 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN200710179352A CN100585904C (zh) | 2007-12-12 | 2007-12-12 | 一种制备有机场效应晶体管的方法 |
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CN200710179352A CN100585904C (zh) | 2007-12-12 | 2007-12-12 | 一种制备有机场效应晶体管的方法 |
Publications (2)
Publication Number | Publication Date |
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CN101459222A CN101459222A (zh) | 2009-06-17 |
CN100585904C true CN100585904C (zh) | 2010-01-27 |
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CN200710179352A Active CN100585904C (zh) | 2007-12-12 | 2007-12-12 | 一种制备有机场效应晶体管的方法 |
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CN (1) | CN100585904C (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102208536B (zh) * | 2011-03-11 | 2013-01-16 | 吉林大学 | 基于环三(甲氧基取代甲基异腈金)纳微米线的光电器件、制备方法及应用 |
EP2648239B1 (en) * | 2012-04-05 | 2014-07-23 | Novaled AG | A method for producing a vertical organic field effect transistor and a vertical organic field effect transistor |
CN109103101B (zh) * | 2017-06-21 | 2020-09-29 | 清华大学 | 纳米微结构的制备方法 |
CN111463106B (zh) * | 2020-04-02 | 2023-06-02 | 超晶科技(北京)有限公司 | 一种基于光刻工艺实现阵列图案的方法 |
CN112687531B (zh) * | 2020-12-27 | 2022-10-11 | 复旦大学 | 一种高电子迁移率晶体管源漏电极的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4525919A (en) * | 1982-06-16 | 1985-07-02 | Raytheon Company | Forming sub-micron electrodes by oblique deposition |
US5298444A (en) * | 1992-05-14 | 1994-03-29 | Siemens Aktiengesellschaft | Method for manufacturing a field effect transistor |
CN101083302A (zh) * | 2006-05-31 | 2007-12-05 | 中国科学院微电子研究所 | 一种结合压印技术制备各向异性有机场效应管的方法 |
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2007
- 2007-12-12 CN CN200710179352A patent/CN100585904C/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4525919A (en) * | 1982-06-16 | 1985-07-02 | Raytheon Company | Forming sub-micron electrodes by oblique deposition |
US5298444A (en) * | 1992-05-14 | 1994-03-29 | Siemens Aktiengesellschaft | Method for manufacturing a field effect transistor |
CN101083302A (zh) * | 2006-05-31 | 2007-12-05 | 中国科学院微电子研究所 | 一种结合压印技术制备各向异性有机场效应管的方法 |
Non-Patent Citations (1)
Title |
---|
OTFTs结构与器件性能. 王伟等.功能材料与器件学报,第13卷第1期. 2007 * |
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Publication number | Publication date |
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CN101459222A (zh) | 2009-06-17 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130422 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130422 |
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Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20130422 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |