CN101080801A - Scan beam irradiation device - Google Patents
Scan beam irradiation device Download PDFInfo
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- CN101080801A CN101080801A CNA2006800013062A CN200680001306A CN101080801A CN 101080801 A CN101080801 A CN 101080801A CN A2006800013062 A CNA2006800013062 A CN A2006800013062A CN 200680001306 A CN200680001306 A CN 200680001306A CN 101080801 A CN101080801 A CN 101080801A
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- 238000001514 detection method Methods 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 8
- 238000010894 electron beam technology Methods 0.000 claims description 169
- 238000012360 testing method Methods 0.000 claims description 46
- 238000004364 calculation method Methods 0.000 claims description 20
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- 238000000354 decomposition reaction Methods 0.000 description 2
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- 238000005070 sampling Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/222—Image processing arrangements associated with the tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
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- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
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Abstract
There is provided a scan beam irradiation device for automatically correcting a field-of-view shift of a scan signal. The scan beam irradiation device (1) includes a stage (3) movable in two-dimensional directions, a beam source (2) for applying a scan beam to a sample, a detection mechanism (4) for detecting a mark arranged on the sample and charged particles from the irradiation position of the scan beam, an image formation mechanism (5) for forming a scan image based on the detection signal from the detection mechanism, and control mechanisms (7, 8, 9) for detecting a positional shift of the mark in the scan image formed by the image formation mechanism, calculating a positional shift correction coefficient, and controlling drive of the beam source and the stage. Moreover, by using a device having a plurality of beam sources, it is possible to correct relative positional relationship between the beam sources.
Description
Technical field
The invention relates to a kind of charge-particle beams such as electron beam or ion beam are shone and on test portion, carry out the scan beam irradiation device that Quadratic Finite Element scanned and formed scan image, particularly about a kind of scan beam irradiation device with function that the linearity of scan image is proofreaied and correct.
Background technology
The scanning beam that makes from one or more electron beam sources and come shines when test portion carries out Quadratic Finite Element scanning, by scanning beam and test portion platform are relatively moved in X-direction and Y direction, usually, in X-direction move 1 row and after obtaining detection signal, be carried out at the operation that Y direction moves 1 row repeatedly, obtain the sweep signal of 1 frame (frame) whereby.
When the inconsistent situation of coordinate system of the coordinate system of platform and scanning beam, in the scan image position that can obtain detection signal, and be disposed between the test portion position on the platform, produce offset (visual field skew of sweep signal).
Before, the correction of this offset by the mark that is provided with in test portion in order to the location, had made platform action and had confirmed to be located at the position of the mark on the test portion, and the coordinate of the coordinate of platform and scanning beam is carried out Coordinate Conversion and carries out.
Again, carry out timing, while be to confirm scan image and manually obtain corrected value to estimate in visual field skew to sweep signal.
[problem that invention institute desire solves]
Yet, for the visual field skew to sweep signal is proofreaied and correct, with range estimation confirm scan image and on one side manually obtain corrected value have the operating time elongated problem of scanning on one side, in addition, because of there not being objective benchmark so also have and cause the different problem of corrected value because of the operator is different.
Again,, all can be offset by occurrence positions, thereby produce the difficult problem of obtaining the relation of platform action and scanning beam so exchange test portion at every turn because of be provided with mark in the test portion side in order to the acquisition corrected value.
Again, by the formation that the scanning beam that comes scans, proofreading and correct to the relative position between these a plurality of electron beam sources from a plurality of electron beam sources.Relative position between this electron beam source is carried out timing, the electron beam spacing between necessary calculating electron beam source or the amount of movement of each controlling value etc., simultaneously when manually carrying out the situation of these computings, there is following problem, promptly produces and calculate or the artificial mistakes such as mistake of offset direction.
Summary of the invention
Therefore, the objective of the invention is to solve above-mentioned known problem points, so that a kind of scan beam irradiation device to be provided, it can automatically be proofreaied and correct the visual field skew of sweep signal.
Again, the object of the present invention is to provide a kind of scan beam irradiation device, the relative position relation of a plurality of electron beam sources is proofreaied and correct, and at least one offset of the direction of rotation of electron beam source, X-direction, Y direction is proofreaied and correct.
For possessing, the scan beam irradiation device of reaching above-mentioned purpose one embodiment of the present of invention has: platform, supporting test portion and removable to being less than the Quadratic Finite Element direction; Electron beam source, the irradiation scanning beam is to aforementioned test portion; Mark is arranged at aforementioned test portion; Testing agency detects the irradiation position of aforementioned scanning beam; Image forms mechanism, and the detection signal according to aforementioned testing agency comes forms scan image; And controlling organization, detect the offset that this image forms formed scan image of mechanism and aforementioned mark, and calculate the offset correction coefficient, according to this offset correction coefficient, the driving of control aforementioned electronic electron gun and platform.
Aforementioned scanning beam for example, is made of charged electron beam.
Above-mentioned mark for example, is by being constituted with symbol in order to the platform that detects aforementioned platform coordinate, and this platform has with symbol, the position symbol of the position on the decision platform, and the direction symbol of the direction of decision bit set symbol.
Aforementioned testing agency detects the test portion that shines from scanning beam and the charged particle that comes.
The earlier figures picture forms mechanism and comprises scan image memory portion, and it forms scan image, and remember this scan image according to the detection signal that comes from aforementioned testing agency.
Aforementioned controlling organization comprises: offset correction factor calculation portion detects the earlier figures picture and forms the scan image of mechanism's gained and the offset of aforementioned mark, and calculates the offset correction coefficient; And control part, according to this offset correction coefficient, the driving of control aforementioned electronic electron gun and platform.
Scan beam irradiation device of the present invention also comprises memory portion, memory area offset correction coefficient.
Again, scan beam irradiation device of the present invention has a plurality of electron beam sources, and it emits the scanning beam that shines test portion.
Mark, for example, constituted with symbol by the scanning beam in each sweep limits of the scanning beam that is arranged at each electron beam source, according to the offset of this scanning beam, in the coordinate system of scanning beam, can obtain any position offset in the direction of rotation skew, Y direction skew, X-direction skew of electron beam source at least with the scan image of symbol.
Scanning beam comprises the horizontal symbol of the straight line that contains on the scanning direction with symbol, and contains the inclination symbol to the straight line on the direction of this horizontal symbol inclination.
Direction of rotation is offset the Y direction position offset at the two ends that can utilize horizontal symbol and tries to achieve.The Y direction skew can be according to obtaining with the position offset of a part of Y direction in two horizontal symbols of the scan image that is obtained by two electron beam sources.The X-direction skew can be according to obtaining with the position offset of a part of Y direction in two inclination symbols of the scan image that is obtained by two electron beam sources.
The effect of invention
According to the present invention, the offset of the position of the position of scan image and the test portion on the platform can be automatically detected, and this offset can be automatically proofreaied and correct, in this way, scanning beam just can shine the tram of test portion right.
According to the present invention, can proofread and correct the relative position relation of a plurality of electron beam sources.And, the offset of at least one in direction of rotation that can the correcting electronic electron gun, X-direction, the Y direction.
Description of drawings
Fig. 1 is the skeleton diagram that illustrates about an embodiment of scan beam irradiation device of the present invention.
Fig. 2 is the key diagram that is arranged at the mark of test portion.
Fig. 3 A is the specification figure in order to a shape example of explanation mark, and Fig. 3 B is the key diagram in order to other shape example of explanation mark.
Fig. 4 A is the key diagram in order to the direction of rotation skew that detects mark, and Fig. 4 B is the key diagram in order to the Y direction skew that detects mark, and Fig. 4 C is the key diagram in order to the X-direction skew that detects mark.
Fig. 5 A is the figure in order to the Y direction skew of explanation electron beam source, and Fig. 5 B is the figure in order to the X-direction skew of explanation electron beam source.
Fig. 6 A is the figure in order to the X-direction skew and the Y direction skew of explanation electron beam source, Fig. 6 B is the figure in order to the X-direction skew and the Y direction skew of explanation electron beam source, Fig. 6 C is the figure in order to the Y direction skew of explanation electron beam source, and Fig. 6 D is the figure in order to the X-direction skew of explanation electron beam source.
Fig. 7 A is the figure in order to the correction of the direction of rotation skew of explanation scan image, Fig. 7 B is the key diagram that the scan image that the skew of direction of rotation has been corrected is shown, Fig. 7 C is the key diagram that the scan image that the skew of Y direction has been corrected is shown, and Fig. 7 D is the key diagram that the scan image that the skew of X-direction has been corrected is shown.
Fig. 8 is a CALCULATION OF PARAMETERS flow chart in proper order of obtaining the capable correction of every offset shift-in of direction of rotation skew, Y direction skew and X-direction skew to electron beam source in order to explanation.
Fig. 9 is the flow chart that calculates the direction of rotation offset correction coefficient of electron beam source in order to explanation.
Figure 10 A is in order to obtaining the key diagram of specifying 2 horizontal symbol of direction of rotation skew, and Figure 10 B is in order to obtain the key diagram of specifying other horizontal symbol of 2 of direction of rotation skew.
Figure 11 A is the key diagram that the length of frame is shown, Figure 11 B illustrates the key diagram that the direction of frame is counted, Figure 11 C is the key diagram that the direction of rotation skew of frame is shown, and Figure 11 D is the key diagram that the direction of rotation skew of frame is shown, and Figure 11 E is the key diagram of expression example that the direction of rotation skew of frame is shown.
Figure 12 is the flow chart that calculates the Y direction offset correction coefficient of electron beam source in order to explanation.
Figure 13 A illustrates electron beam source and the key diagram of scanning with the position relation of symbol, and Figure 13 B illustrates the key diagram of scanning with the scan image of symbol, and Figure 13 C is the key diagram that the correction of the Y direction skew between electron beam source is shown.
Figure 14 A is the figure that the relation of frame and Y direction skew is shown, and Figure 14 B is the key diagram that the length of frame is shown, and Figure 14 C illustrates the key diagram that the direction of frame is counted.
Figure 15 is the flow chart that calculates the X-direction offset correction coefficient of electron beam source in order to explanation.
Figure 16 A is the key diagram that the X-direction offset correction between electron beam source is shown, and Figure 16 B illustrates the key diagram of the scanning beam of electron beam source with glyph image, and Figure 16 C is the figure in order to the X-direction offset correction between the explanation electron beam source.
Figure 17 A is the key diagram that the X-direction offset correction between electron beam source is shown, and Figure 17 B is the key diagram that the length of frame is shown, and Figure 17 C illustrates the key diagram that the direction of frame is counted.
Figure 18 A is the figure in order to the order of the correction calculation of the direction of rotation offset correction of explanation electron beam source, Figure 18 B is the figure in order to the order of the correction calculation of the Y direction offset correction of explanation electron beam source, and Figure 18 C is the figure in order to the order of the correction calculation of the X-direction offset correction of explanation electron beam source.
Figure 19 is the front elevation of an example that the display frame of scan beam irradiation device is shown.
1: scan beam irradiation device 2: electron beam source
3: platform 4: testing agency
5: scan image formation portion 6: scan image memory portion
7: offset correction factor calculation portion
7a: direction of rotation offset correction coefficient calculations portion
7b:Y direction of principal axis offset correction coefficient calculations portion
7c:X direction of principal axis offset correction coefficient calculations portion
8: parameters memorizing portion 9: control part
11: platform symbol 11a: position symbol
11b: direction symbol 12: scanning beam symbol
12a: horizontal symbol 12b: inclination symbol
13: the path
Embodiment
Below, about the invention process form, described in detail in accordance with the embodiments illustrated.
Fig. 1 is the skeleton diagram that an embodiment of scan beam irradiation device of the present invention is shown.In this scan beam irradiation device 1, possess to have and supporting that test portion also can be to being less than the platform 3 that the Quadratic Finite Element direction moves, scanning beam is shone electron beam source 2 on test portion, be arranged at the mark on the test portion, detect the testing agency 4 of the irradiation position of scanning beam, the image that the detection signal of examining according to this testing agency forms scan image forms mechanism, detect the offset of this image formation formed scan image of mechanism and mark, and calculate the offset correction coefficient, control the controlling organization of the driving of aforementioned electronic electron gun and platform again according to this offset correction coefficient.
It constitutes testing agency 4 and detects the test portion that shines from scanning beam and the charged particle of examining.Image forms mechanism and contains scan image memory portion 6, and it forms scan image according to the detection signal that comes from testing agency, and remembers this scan image.Controlling organization possesses: detects image and forms the scan image of mechanism's gained and the offset of mark, and the offset correction factor calculation portion of calculating the offset correction coefficient; And come the control part 9 of the driving of controlling electron beam source and platform according to this offset correction coefficient.Electron beam source 2 shines charge-particle beams such as electronics or ion on test portion.The driving mechanism of not icon that platform 3 utilization is being supported the test portion of substrate etc. can move on X, Y direction.Testing agency 4 is detected the secondary electron that produces from test portion because of the irradiation of charge-particle beam etc., and by the scanning of charge-particle beam or moving of platform the irradiation position of the electron beam on the test portion is scanned.
Scan image formation portion 5 has: it uses the detection signal that is obtained by testing agency 4 to form scan image.Scan image memory portion 6, it remembers formed scan image.Offset correction factor calculation portion 7, it is based on the scan image that is obtained and calculating location offset correction coefficient.Parameters memorizing portion 8, the parameters such as offset correction coefficient that its memory is calculated by offset correction factor calculation portion 7.Control part 9, it carries out drive controlling based on the offset correction coefficient that is obtained or other parameter to electron beam source 2 or platform 3.
Offset correction factor calculation portion 7 comprises following processing: the calculating of the direction of rotation offset correction coefficient calculations 7a of portion, its skew of obtaining with respect to the direction of rotation skew of the reference coordinate of electron beam source 2 (electron beam coordinate system or platform coordinate system) changes, and calculates the correction coefficient that the side-play amount of being obtained is proofreaied and correct; The calculating of the Y direction offset correction coefficient calculations 7b of portion, it is obtained the side-play amount of the Y direction skew between each electron beam source, and calculates the correction coefficient that the side-play amount of being obtained is proofreaied and correct in the formation with a plurality of electron beam sources 2; And, the calculating of the X-direction offset correction coefficient calculations 7c of portion, it obtains the side-play amount of the X-direction skew between each electron beam source, and calculates the correction coefficient that the side-play amount of being obtained is proofreaied and correct.
Scan beam irradiation device 1 of the present invention has mark offset, that be located at test portion in order to test portion that is disposed on the computing platform 3 and electron beam source.Fig. 2 is in order to the figure of the mark that scan beam irradiation device 1 of the present invention is had to be described.Among Fig. 2, mark comprise in order to the platform of obtaining platform coordinate with symbol 11, with in order to the scanning beam of the offset of calculating scanning beam with symbol 12.Mark is by etching etc. and be formed at the upper end and/or the lower end of platform.Expressive notation is located at the example of the upper end of platform among Fig. 2, but also can be the structure of being located at the lower end, and the structure of being located at the two ends of upper end and lower end.Platform is to be provided with at each electron beam source 2 with symbol 11, and scanning beam is located between the electron beam source with symbol 12.
Fig. 3 A and Fig. 3 B are the figure in order to the shape example of explanation mark.Fig. 3 A represents the example of platform with the shape of symbol 11.Platform comprises the position symbol 11a that is used to determine the position on the platform with symbol 11, and expression position symbol 11a be positioned at sweep limits where to direction symbol 11b.In the scan image that is obtained, can't find under the situation of position symbol 11a, by the direction that exists that can confirm position symbol 11a with reference to this direction symbol 11b.
Moreover the shape of position symbol 11a shown in Fig. 3 A and direction symbol 11b is an example only, and this shape is limited.
Again, Fig. 3 B represents the example of scanning beam with the shape of symbol 11a.Scanning beam is located at symbol 12 in each sweep limits of scanning beam of each electron beam source 2, the pointer that these scanning beams move as the direction of rotation skew of obtaining electron beam source, Y direction skew, the offset of X-direction skew equipotential in the coordinate system of scanning beam with symbol.
Scanning beam comprises the horizontal symbol 12a of the straight line that contains the scanning direction and contains the inclination symbol 12b that for example favours the straight line of horizontal symbol 12a with 45 degree directions with symbol 12.
Below, mainly for utilizing the scanning beam symbol, and the treatment for correcting of direction of rotation skew, Y direction skew and X-direction skew is illustrated.
Obtain the direction of rotation skew according to the position offset of the Y direction at horizontal symbol 12a two ends.Fig. 4 A is in order to the figure of explanation according to horizontal symbol detection direction of rotation skew.In Fig. 4 A, the deviation angle θ of direction of rotation is corresponding to the position offset of the Y direction at horizontal symbol 12a two ends, so can calculate the direction of rotation side-play amount according to the position offset of Y direction.
According to position offset, obtain the Y direction skew among two horizontal symbol 12a of the scan image that obtains by two electron beam sources with the Y direction of a part again.Fig. 4 B is in order to the figure of explanation by horizontal symbol detection Y direction skew.Among Fig. 4 B, the skew of the Y direction of two electron beam sources is corresponding to the position offset of the Y direction of two horizontal symbol 12a of the scan image that is obtained by the scanning of each electron beam source, so can calculate the Y direction side-play amount between electron beam source according to the position offset of Y direction.
In two inclination symbol 12b of the scan image that obtains by two electron beam sources,, obtain the X-direction skew according to position offset with a part of Y direction again.Fig. 4 C is the figure that is gone out the X-direction skew in order to explanation by the inclination symbol detection.Among Fig. 4 C, the skew of the X-direction of two electron beam sources is corresponding to the position offset of the Y direction of two inclination symbol 12b of the scan image of acquisition by each electron beam source scanning.The angle of this inclination symbol 12b is made as with 45 degree favours under the situation of horizontal symbol 12a, the side-play amount of X-direction skew is an equal angular with the side-play amount of Y direction skew, so can obtain the side-play amount of Y direction skew and with its side-play amount that is offset as X-direction.
Moreover, the angle of inclination symbol 12b can be made as with arbitrarily angled beyond 45 degree and favour horizontal symbol 12a.Under this situation, the side-play amount of the side-play amount of X-direction skew and Y direction skew is not to concern for equal angular becomes specific corresponding angle, carry out computing so have specific corresponding angle relation, can obtain the side-play amount of X-direction skew whereby based on side-play amount with the Y direction skew.
Moreover the left of Fig. 4 C represents, during as benchmark, the mark shown in the fine rule is to the situation of left skew with the mark shown in the thick line; The right-hand expression of Fig. 4 C, during as benchmark, the mark shown in the fine rule is to the situation of right-hand skew with the mark shown in the thick line.The skew of this X-direction can according to inclination symbol 12b (with solid line represent＞the Y direction skew obtain.
Utilize Fig. 5 A, Fig. 5 B, Fig. 6 A～Fig. 6 D to be illustrated for Y direction skew and X-direction skew.Moreover, the skew between this expression electron beam source m and electron beam source m-1.
Fig. 5 A is the figure in order to the skew of explanation Y direction.The skew of Y direction between electron beam source can compare each mark of the scan image that obtained by each electron beam source, and obtains according to the side-play amount of the Y direction of the horizontal symbol 12a (representing with solid line) of this mark.
Fig. 5 B is the figure in order to the skew of explanation X-direction.The skew of X-direction between electron beam source can compare each mark of the scan image that obtained by each electron beam source, and obtains according to the side-play amount of the Y direction of the inclination symbol 12b (representing with solid line) of this mark.
Fig. 6 A～Fig. 6 D is the figure in order to skew of explanation X-direction and Y direction skew.Y direction skew between electron beam source is shown in Fig. 6 C, each mark to the scan image that obtained by each electron beam source compares, and obtain according to the side-play amount of the Y direction of the horizontal symbol 12a of this mark, X-direction skew between electron beam source is shown in Fig. 6 D, each mark to the scan image that obtained by each electron beam source compares, and obtains according to the side-play amount of the Y direction of the inclination symbol 12b of this mark.
By the capable correction of every offset shift-in to above-mentioned direction of rotation skew, Y direction skew and X-direction skew, the skew of recoverable scan image.Fig. 7 A～Fig. 7 D is in order to the figure of correct scan image shift to be described by the offset correction.Moreover, obtain the state of scan image respectively by 4 paths in three electron beam sources of this expression.
Fig. 7 A represents to contain the scan image example of direction of rotation skew.If, then in the scan image that is obtained, can contain the direction of rotation skew because of the irradiation shape eel that angle or electron beam are set of electron beam source 2 produces skew in direction of rotation.The scan image of straight line is to represent with the line that favours horizontal direction because of the direction of rotation skew at a certain angle.
State after Fig. 7 B represents direction of rotation skew proofreaied and correct.Make the line that tilts become straight line by the direction of rotation offset correction.At this moment, when on Y direction, having the situation of skew between electron beam source, on Y direction, there is skew by the straight line of the scan image that each electron beam source obtained.
Fig. 7 C represents the state after the usage level symbol is proofreaied and correct Y direction skew.The Y direction that can eliminate between electron beam source by the Y direction offset correction is offset.At this moment, in having between electron beam source under the situation that has skew on the X-direction offset direction, there is skew in X-direction by the straight line of the scan image that each electron beam source obtained.
State after Fig. 7 D represents to use the inclination symbol skew is proofreaied and correct to X-direction.Can eliminate the skew of the X-direction between electron beam source by the X-direction offset correction.
Then, utilize the flow chart of Fig. 8, be illustrated for the order of obtaining the parameter of the capable correction of every offset shift-in of direction of rotation skew, Y direction skew and X-direction skew.
At first, in the Control Parameter when obtaining scan image, the parameter of will be offset direction of rotation, Y direction skew, X-direction skew etc. being proofreaied and correct is made as " 0 " (S1), scanning beam under this state, and obtain the scan image that is formed at the mark on the platform.In this, for direction of rotation skew, Y direction skew and X-direction skew are proofreaied and correct, so obtain the scan image (S2) of scanning beam with symbol.
Use this scanning beam of obtaining of institute to obtain the correction coefficient (S3) that the direction of rotation of electron beam source is offset with symbol, and use the direction of rotation offset correction coefficient settings Control Parameter (S4) obtained, under the state of proofreading and correct the direction of rotation skew, reuse direction of rotation offset correction coefficient and come scanning beam, thereby obtain the scan image (S5) of scanning beam with symbol.
Then, use is offset the horizontal symbol of the scanning beam of the scan image of proofreading and correct the back and obtaining with symbol to direction of rotation, obtain Y direction offset correction coefficient (correcting value) (S6), and use scanning beam to obtain X-direction offset correction coefficient (correcting value) (S7) with the inclination symbol of symbol.
Use direction of rotation offset correction coefficient, Y direction offset correction coefficient, the X-direction offset correction coefficient obtained in the above steps, set the parameter (S8) of electron beam control.
Below, with reference to Fig. 9, Figure 10, Figure 10 B, Figure 11 A～Figure 11 E the direction of rotation offset correction is illustrated, utilize Figure 12, Figure 13 A～Figure 13 C, Figure 14 A～Figure 14 C, Figure 15 that the Y direction offset correction is illustrated, the X-direction offset correction is illustrated with reference to Figure 16 A～Figure 16 C, Figure 17 A～Figure 17 C, Figure 18 A～Figure 18 C.
Fig. 9 is the flow chart in order to the calculating (S3 in Fig. 8 flow chart) of the direction of rotation offset correction coefficient of explanation electron beam source.Moreover, in this, be illustrated with regard to situation with a plurality of electron beam sources (number of electron beam source is made as N).
If n=0 (S3a) according to the scan image of electron beam source n, specifies 2 points (S3b) for scanning with the horizontal symbol of electron beam symbol, obtain the side-play amount (S3c) of 2 specified Y direction.Calculate direction of rotation offset correction coefficient (S3d) according to the Y direction side-play amount of being obtained.
If n=n+1 (S3e) compares (S3f) to n and N, and carry out (S3b) repeatedly～(S3e) step becomes N until n, calculates the direction of rotation offset correction coefficient about all electron beam sources whereby.
In above-mentioned (S3b) step, for obtaining 2 points in the direction of rotation skew specified level symbol.Figure 10 A is the figure of an example of 2 in the expression specified level symbol, specifies the end (checking No.1) of two horizontal symbol one sides' horizontal symbol upside, and the end of the downside of the horizontal symbol of appointment other party (checking No.2).Again, Figure 10 B is that other of 2 specified the figure of example in the horizontal symbol of expression, specifies the both ends (check No.1, check No.2) of a horizontal symbol, and the counting of Y direction with specified point in scan image obtained side-play amount.Moreover in this, side-play amount is the expression of counting that is deducted gained behind the point of checking No.2 by the point with the inspection No.1 in scheming.
The relation of Figure 11 (a)～Figure 11 (e) expression frame and direction of rotation skew.Figure 11 A, 11B represent the scope of a frame and an example of counting of a frame.The length of the directions X of frame is that the length of LX (for example 47mm), y direction is Ly (for example 3mm), and directions X has counting of Px, and the y direction has counting of Py.
Therefore, to the side-play amount of the Y direction of horizontal symbol, by the offset coefficient that makes the direction of rotation skew in the calculation block of counting corresponding to frame.Can calculate by following formula:
Direction of rotation offset correction coefficient=
Length * the side-play amount of the point/frame directions X of the length of frame Y direction/frame Y direction.
For example, when the scope of a frame for (47mm * 3mm＞, a frame count to (3520 point * 68 point) time, under skew 2 situations of counting, side-play amount is under Y direction
0.001855347＝3(mm)/68(point)/47(mm)/2(point)。
Figure 11 C represents that direction of rotation skew be that the situation of anticlockwise, Figure 11 D represent that direction of rotation is offset and be the situation of right rotation.Figure 11 E is the expression example of the direction of rotation of direction of rotation skew, and " right " expression direction of rotation skew among the figure is right rotation, and " left " expression direction of rotation skew among the figure is anticlockwise.Moreover the situation of above-mentioned numerical example is corresponding to the right rotation direction.
Then, the calculating with regard to Y direction offset correction coefficient is illustrated.
Figure 12 is the flow chart in order to the calculating (S6 in Fig. 8 flow chart) of the Y direction offset correction coefficient of explanation electron beam source.Moreover in this expression, when having the situation of a plurality of electron beam sources (number of electron beam source is N), obtaining with electron beam source m successively is benchmark and the order of the correction coefficient that skew is proofreaied and correct to the Y direction of other electron beam sources.
M sets to the reference electronic electron gun.Arbitrary electron beam source in a plurality of electron beam sources can be set at the reference electronic electron gun.For example, when the electron beam source number is the situation of " 7 ", can establishes m=4 and will be positioned at the 4th central electron beam source as benchmark (S6a).
Below, obtain the Y direction skew of the electron beam source that is adjacent to the reference electronic electron gun, and obtain the correction coefficient that this Y direction skew is proofreaied and correct, and then obtain the Y direction skew and the correction coefficient of the electron beam source of adjacency.This computing is carried out in both sides to the reference electronic electron gun, can obtain the correction coefficient that the Y direction skew of reference electronic electron gun is proofreaied and correct whereby in all electron beam sources.
At first, reference electronic electron gun m is obtained the electron beam source (m-1 that is present in side's side, m-2, ..., (S6b～S6f), next obtains electron beam source (m+1, the m+2 that is present in the other party side among the reference electronic electron gun m to the correction coefficient of Y direction skew 1), ..., the correction coefficient of Y direction skew N) (S6g～S6k).
When obtaining the situation of correction coefficient of Y direction skew,, obtain specified 2 side-play amounts (S6c) in Y direction according to 2 points (S6b) of the horizontal symbol of the scan image invisible scanning usefulness electron beam symbol of electron beam source m and electron beam source m-1.And calculate Y direction offset correction coefficient (S6d) according to the Y direction side-play amount of being obtained.
If during m=m-1 (S6e), m is compared (S6f) with " 0 ", the step of carrying out (S6b)～(S6e) repeatedly is " 0 " until m, calculates the Y direction offset correction coefficient of the electron beam source of reference electronic electron gun 1～m-1 whereby.
Then, according to the scan image invisible scanning of electron beam source m and electron beam source m+1 2 points (S6g), obtain specified 2 side-play amounts (S6h) in Y direction with the horizontal symbol of electron beam symbol.Calculate Y direction offset correction coefficient (S6i) according to the Y direction side-play amount of being obtained.
If m=m+1 (S6j) compares (S6k) to m and " N ", the step of carrying out (S6g)～(S6j) repeatedly is " N " until m, calculates the Y direction offset correction coefficient of reference electronic electron gun m+1～N whereby.
Whereby, can obtain the correction coefficient that the Y direction skew of all electron beam sources among the reference electronic electron gun m is proofreaied and correct.
Figure 13 A～Figure 13 C is the figure in order to the Y direction offset correction between the explanation electron beam source.Figure 13 A represents that electron beam source m and m-1 and scanning beam concern with intersymbol position, and Figure 13 B represents the scan image of scanning beam with symbol.The scanning beam of electron beam source m and electron beam source m-1 is offset because of the Y direction skew of electron beam source is viewed as on Y direction with the image of symbol.In this, shown in Figure 13 C, the invisible scanning electron beam is obtained side-play amount according to specified point counting of Y direction with the inspection No.1 and inspection No.2 of the horizontal symbol (representing with solid line) of symbol.
Moreover in this, side-play amount is by deducting the counting of back gained of the point of checking No.2 with the point of checking No.1 in scheming and representing.
Figure 14 A～Figure 14 C represents the relation of frame and Y direction skew.Figure 14 B, Figure 14 C represent the scope of a frame and an example of counting of a frame, and are shown in the state of skew py on the Y direction.Figure 14 A represents the scan image (respectively only represent a side) of two scanning beams with symbol, and can be observed on the Y direction and be offset py.
Frame is that length on Lx (for example 47mm), the y direction is Ly (for example 3mm) in the length on the directions X, has counting of Px in directions X, has counting of ア y in the y direction.
In with the corresponding relation of above-mentioned frame in, the side-play amount to the Y direction of horizontal symbol calculates the offset coefficient of Y direction skew by making to count corresponding to frame.Can calculate by following formula:
Y direction offset correction coefficient=
Point/minimal decomposition the energy of the length of side-play amount * frame Y direction/frame Y direction.
For example, when the scope of a frame be (47mm * 3mm), and the sampling number of the Y direction of a frame is 68 o'clock, side-play amount is under the situation of-4 of skews on the Y direction,
-44＝-4(point)×3000(um)/6.8(point)/4(um)。
Then, the calculating with regard to X-direction offset correction coefficient is illustrated.
Figure 15 is the flow chart that calculates the X-direction offset correction coefficient (S7 in Fig. 8 flow chart) of electron beam source in order to explanation.Moreover, in this expression, have under the situation of a plurality of electron beam sources (number of electron beam source is N), obtain the order that electron beam source m is offset the correction coefficient of proofreading and correct as benchmark to the Y direction of other electron beam sources successively.
At first, reference electronic electron gun m is set.Arbitrary electron beam source in a plurality of electron beam sources can be made as the reference electronic electron gun.For example, the number of electron beam source is under the situation of " 7 ", can establish m=4 and will be positioned at the 4th central electron beam source as benchmark.(S7a)。
Then, obtain the X-direction skew of the electron beam source that is adjacent to the reference electronic electron gun, and obtain the correction coefficient that this X-direction skew is proofreaied and correct, and then obtain the X-direction skew and the correction coefficient of the electron beam source of adjacency.This calculating is carried out in both sides in the reference electronic electron gun, can obtain the correction coefficient that the X-direction skew of reference electronic electron gun is proofreaied and correct in all electron beam sources.
At first, obtain the electron beam source (m-1 that is present in side's side among the reference electronic electron gun m, m-2, ..., (S7b～S7f), next obtains electron beam source (m+1, the m+2 that is present in the other party side among the reference electronic electron gun m to the correction coefficient of X-direction skew 1), ..., the correction coefficient of X-direction skew N) (S7g～S7k).
Obtain under the situation of correction coefficient of X-direction skew, according to the scan image of electron beam source m and electron beam source m-1,2 points (S7b) of the inclination symbol of invisible scanning usefulness electron beam symbol are obtained specified 2 side-play amounts in Y direction (S7c).Calculate X-direction offset correction coefficient (S7d) according to the Y direction side-play amount of being obtained.
If m=m-1 (S7e) compares (S7f) to m and " 0 ", carry out repeatedly (S7b＞～(S7e) step be " 0 " until m, whereby for the electron beam source calculating X-direction offset correction coefficient of reference electronic electron gun 1～m-1.
Then, according to the scan image of electron beam source m and electron beam source m+1, invisible scanning is with 2 points (S7g) of the inclination symbol of electron beam symbol, obtain 2 specified side-play amounts in Y direction (S7h＞.Calculate X-direction offset correction coefficient (S7i) according to the Y direction side-play amount of being obtained.
If m=m+1 (S71) compares (S7k) to m and " N ", the step of carrying out (S7g)～(S7j) repeatedly is " N " until m, calculates the X-direction offset correction coefficient of the electron beam source of reference electronic electron gun m+1～N whereby.
Whereby, can calculate the correction coefficient that the X-direction skew of all electron beam sources among the reference electronic electron gun m is proofreaied and correct.
Figure 16 A～Figure 16 C is the figure in order to the X-direction offset correction between the explanation electron beam source.Figure 16 A represents that electron beam source m and m-1 and scanning beam concern with intersymbol position, and Figure 16 B represents the scan image of scanning beam with symbol.The scanning beam of electron beam source m and electron beam source m-1 is with the X-direction skew of the image of symbol, when observing in the inclination symbol is the situation of angles of 45 degree with respect to horizontal symbol under, can be used as the Y direction skew.In this, shown in Figure 16 C, specify inspection No.1 and check No.2 with the inclination symbol (representing) of symbol with solid line for scanning beam, obtain side-play amount according to the counting of Y direction of specified point.
Moreover in this, side-play amount is to be represented by counting of gained behind the point that deducts inspection No.2 with the point of checking No.1 in scheming.
Figure 17 A～Figure 17 C represents the relation of frame and X-direction skew.Figure 17 B, 17C represent the scope of a frame and an example of counting of a frame, and expression is to the state of directions X skew px.Figure 17 A represents the scan image (respectively only represent a side) of two scanning beams with symbol, during observation, the state that only is offset px in directions X can be used as in the Y direction only be offset py (=px＞.
Frame is Lx (for example 47mm), is Ly (for example 3mm) in the length of y direction to have counting of Px in directions X in the length of x direction, has counting of Py in the y direction.
In the relation corresponding,, count corresponding and calculate the offset coefficient of X-direction skew with frame by making for the side-play amount of the Y direction of inclination symbol with above-mentioned frame.Can calculate by following formula:
X-direction offset correction coefficient=
Point/minimal decomposition the energy of the length of side-play amount * frame Y direction/frame Y direction.
For example, when the scope of a frame be that (47mm * 3mm), and the sampling number of the Y direction of a frame is 68 o'clock, under skew 2 situations of counting on the Y direction, side-play amount is
22＝2(point)×3000(um)/68(point)/4(um)。
Figure 18 A～Figure 18 C is the figure in order to the correction calculation order of explanation direction of rotation offset correction, Y direction offset correction and X-direction offset correction.
Figure 18 A represents successively the direction of rotation offset correction of electron beam source to be carried out from left to right an example of the situation of calculation process.Irrelevant between direction of rotation offset correction and each electron beam source, the direction of rotation offset correction of an electron beam can not exert an influence to the direction of rotation offset correction of other electron beam sources, so electron beam source can be proofreaied and correct in random order.
Figure 18 B is an example of Y direction offset correction order, and the electron beam source No.4 with central authorities in 7 electron beam sources is that benchmark carries out the Y direction offset correction successively.At first, in reference electronic electron gun No.4 and be adjacent between the electron beam source of No.3 in its left side and carry out the Y direction offset correction, then, between No.3 and No.2 electron beam source, carry out the Y direction offset correction, afterwards, between No.2 and No.1 electron beam source, carry out the Y direction offset correction, thereby finish the Y direction offset correction of left electron beam source.
Then, the 4th step, in reference electronic electron gun No.4 and be adjacent between the electron beam source of No.5 on its right side and carry out the Y direction offset correction, then, between the electron beam source of No.5 and No.6, carry out the Y direction offset correction, afterwards, between the electron beam source of No.6 and No.7, carry out the Y direction offset correction, thereby finish the Y direction offset correction of right-hand electron beam source.
Whereby, can proofread and correct the skew of the Y direction in all electron beam sources.
Figure 18 C is an example of X-direction offset correction order, and is same with the Y direction offset correction, in 7 electron beam sources, is that benchmark carries out the X-direction offset correction successively with the electron beam source No.4 of central authorities, and carries out the X-direction offset correction of all electron beam sources.
Moreover, in the correction of Y direction, X-direction, by will proofread and correct with proofread and correct after mark compare successively and when carrying out timing or obtaining the correction coefficient of reference mark, must consider last corrected value.
Then, the action in practical application is illustrated with regard to scan beam irradiation device of the present invention.
Figure 19 is the display frame example, shows the image that is used for the reading scan image and uses scanning beam to carry out the image of treatment for correcting with marks such as symbols.
The left screen displayed of Figure 19 has scan image, can specify the ad-hoc location of scanning beam shown in this scan image with marks such as symbols.The coordinate figure of the point on the scan image is shown in the below part of Figure 19 left picture, after pressing " Port1 " button, the coordinate figure of the 1st check point then can be shown in its right half, similarly, after pressing " Port2 " button, the coordinate figure of the 2nd check point can be shown in its right half.
The right-hand screen displayed of Figure 19 has the check point of scanning beam with symbol and appointment, and its below shows and is used to select to proofread and correct the button of item or content of operation and the tabulation that item is proofreaied and correct in expression.
The button of selecting to proofread and correct item has following three kinds, promptly, select direction of rotation offset correction (rotational adjust, the rotation adjustment) button, select the button of Y direction offset correction (Y axis adjust, Y-axis adjustment), and, select the button (X axis adjust, X-axis adjustment) of X-direction offset correction.Button as the selection operation content is provided with the Next button, its with check point additional record of showing among " Port1 ", " Port2 " in tabulation, and the Back button that returns the original place.
In the tabulation, respectively proofread and correct item about direction of rotation offset correction, Y direction offset correction, X-direction offset correction etc., according to its state display offset correction coefficient (parameter).For example, background colour that can be different and show the acquired state of correction coefficient, the state of obtaining now and obtain before state etc.Moreover, only represent a part of tabulating among Figure 19.
[utilizability on the industry]
Scanning beam irradiation unit of the present invention is little applicable to TFT array testing fixture, electric wire In component analysis instrument, SEM, the x-ray analysis device etc.
Claims (10)
1, a kind of scan beam irradiation device is characterized in that comprising:
Platform is being supported test portion and removable to being less than the Quadratic Finite Element direction;
Electron beam source, the irradiation scanning beam is to aforementioned test portion;
Mark is arranged at aforementioned test portion;
Testing agency detects the irradiation position of aforementioned scanning beam;
Image forms mechanism, and the detection signal according to aforementioned testing agency comes forms scan image; And
Controlling organization detects the offset that the earlier figures picture forms formed scan image of mechanism and aforementioned mark, and calculates the offset correction coefficient, according to this offset correction coefficient, and the driving of control aforementioned electronic electron gun and platform.
2, scan beam irradiation device according to claim 1 is characterized in that aforementioned scanning beam is made of charged electron beam.
3, scan beam irradiation device according to claim 1 is characterized in that:
Above-mentioned mark is by being constituted with symbol in order to the platform that detects aforementioned platform coordinate,
This platform has with symbol, the position symbol of the position on the decision platform, and the direction symbol of the direction of decision bit set symbol.
4, scan beam irradiation device according to claim 1 is characterized in that aforementioned testing agency detects the test portion that shines from scanning beam and the charged particle that comes.
5, scan beam irradiation device according to claim 1 is characterized in that the earlier figures picture forms mechanism and comprises scan image memory portion, and it forms scan image, and remember this scan image according to the detection signal that comes from aforementioned testing agency.
6, scan beam irradiation device according to claim 1 is characterized in that aforementioned controlling organization comprises:
Offset correction factor calculation portion detects the earlier figures picture and forms the scan image of mechanism's gained and the offset of aforementioned mark, and calculates the offset correction coefficient; And
Control part, according to this offset correction coefficient, the driving of control aforementioned electronic electron gun and platform.
7, scan beam irradiation device according to claim 6 is characterized in that also comprising memory portion, memory aforementioned location offset correction coefficient.
8, scan beam irradiation device according to claim 1 is characterized in that:
Have a plurality of electron beam sources, and
Above-mentioned mark is the interior scanning beam symbol of each sweep limits that is arranged at the scanning beam of above-mentioned each electron beam source, according to the offset of this scanning beam, in the coordinate system of scanning beam, obtain any position offset in the direction of rotation skew, Y direction skew, X-direction skew of electron beam source at least with the scan image of symbol.
9, scan beam irradiation device according to claim 8 is characterized in that described scanning beam has with symbol:
Contain the horizontal symbol of the straight line on the above-mentioned scanning direction, and contain the inclination symbol that above-mentioned horizontal symbol is the straight line on the direction of inclination.
10, scan beam irradiation device according to claim 9 is characterized in that:
According to the position offset on the Y direction at the two ends of above-mentioned horizontal symbol, obtain the direction of rotation skew,
In two horizontal symbols of the scan image that obtains utilizing two electron beam sources,, obtain the Y direction skew according to position offset with a part of Y direction,
In two inclination symbols of the scan image that obtains utilizing two electron beam sources,, obtain the X-direction skew according to position offset with a part of Y direction.
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| JP026721/2005 | 2005-02-02 | ||
| JP2005026721 | 2005-02-02 | ||
| PCT/JP2006/300804 WO2006082714A1 (en) | 2005-02-02 | 2006-01-20 | Scan beam irradiation device |
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| JP (1) | JP4555909B2 (en) |
| KR (1) | KR100893283B1 (en) |
| CN (1) | CN101080801B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102047130B (en) * | 2008-06-02 | 2013-09-04 | 株式会社岛津制作所 | Liquid crystal array inspection apparatus and method for correcting imaging range |
| CN102164635B (en) * | 2008-10-23 | 2014-01-15 | 株式会社岛津制作所 | Particle beam treatment apparatus |
| CN108369331A (en) * | 2015-12-10 | 2018-08-03 | 佳能株式会社 | Microscopic system and its control method |
| CN109166781A (en) * | 2018-09-11 | 2019-01-08 | 镇江乐华电子科技有限公司 | scanning transmission electron microscopic imaging method and system |
| CN111879494A (en) * | 2020-08-10 | 2020-11-03 | 中国空气动力研究与发展中心超高速空气动力研究所 | Low-density wind tunnel flow field space measuring point position calibration method based on electron beam fluorescence |
| CN112259469A (en) * | 2020-10-21 | 2021-01-22 | 上海华力集成电路制造有限公司 | Semiconductor device critical dimension measuring method and method for obtaining SEM image |
| CN112286003A (en) * | 2019-07-25 | 2021-01-29 | 纽富来科技股份有限公司 | Multi-beam drawing method and multi-beam drawing device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4855875B2 (en) * | 2006-09-06 | 2012-01-18 | 富士フイルム株式会社 | Electron beam drawing apparatus and electron beam deviation compensation method |
| JP5164355B2 (en) * | 2006-09-27 | 2013-03-21 | 株式会社日立ハイテクノロジーズ | Charged particle beam scanning method and charged particle beam apparatus |
| JP5472690B2 (en) * | 2009-06-23 | 2014-04-16 | 株式会社島津製作所 | Scanning beam irradiation device |
| JP5788719B2 (en) * | 2011-06-09 | 2015-10-07 | 株式会社日立ハイテクノロジーズ | Stage device and control method of stage device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS5940452A (en) * | 1982-08-30 | 1984-03-06 | Fujitsu Ltd | Electron beam device |
| JP3238487B2 (en) * | 1991-11-14 | 2001-12-17 | 富士通株式会社 | Electron beam equipment |
| WO2001069643A1 (en) * | 2000-03-13 | 2001-09-20 | Hitachi, Ltd. | Charged particle beam scanning device |
| JP4690586B2 (en) * | 2000-06-09 | 2011-06-01 | 株式会社アドバンテスト | Mask, electron beam deflection calibration method, electron beam exposure apparatus |
| JP3765988B2 (en) * | 2001-02-23 | 2006-04-12 | 株式会社日立製作所 | Electron beam visual inspection device |
| JP3349504B1 (en) * | 2001-08-03 | 2002-11-25 | 株式会社日立製作所 | Electron beam drawing equipment and electron microscope |
| JP2004356276A (en) * | 2003-05-28 | 2004-12-16 | Riipuru:Kk | Charged beam proximity lithography method and system |
| JP3689097B2 (en) * | 2003-09-03 | 2005-08-31 | 株式会社東芝 | Charged beam drawing apparatus and drawing method |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102047130B (en) * | 2008-06-02 | 2013-09-04 | 株式会社岛津制作所 | Liquid crystal array inspection apparatus and method for correcting imaging range |
| CN102164635B (en) * | 2008-10-23 | 2014-01-15 | 株式会社岛津制作所 | Particle beam treatment apparatus |
| CN108369331A (en) * | 2015-12-10 | 2018-08-03 | 佳能株式会社 | Microscopic system and its control method |
| CN109166781A (en) * | 2018-09-11 | 2019-01-08 | 镇江乐华电子科技有限公司 | scanning transmission electron microscopic imaging method and system |
| CN112286003A (en) * | 2019-07-25 | 2021-01-29 | 纽富来科技股份有限公司 | Multi-beam drawing method and multi-beam drawing device |
| CN112286003B (en) * | 2019-07-25 | 2023-11-03 | 纽富来科技股份有限公司 | Multi-beam drawing method and multi-beam drawing device |
| CN111879494A (en) * | 2020-08-10 | 2020-11-03 | 中国空气动力研究与发展中心超高速空气动力研究所 | Low-density wind tunnel flow field space measuring point position calibration method based on electron beam fluorescence |
| CN111879494B (en) * | 2020-08-10 | 2022-05-17 | 中国空气动力研究与发展中心超高速空气动力研究所 | Low-density wind tunnel flow field space measuring point position calibration method based on electron beam fluorescence |
| CN112259469A (en) * | 2020-10-21 | 2021-01-22 | 上海华力集成电路制造有限公司 | Semiconductor device critical dimension measuring method and method for obtaining SEM image |
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| WO2006082714A1 (en) | 2006-08-10 |
| TWI290430B (en) | 2007-11-21 |
| KR20070056142A (en) | 2007-05-31 |
| TW200633496A (en) | 2006-09-16 |
| KR100893283B1 (en) | 2009-04-17 |
| JPWO2006082714A1 (en) | 2008-08-07 |
| JP4555909B2 (en) | 2010-10-06 |
| CN101080801B (en) | 2010-06-23 |
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