TW200633496A - Scanning electron beam device - Google Patents

Scanning electron beam device

Info

Publication number
TW200633496A
TW200633496A TW094146676A TW94146676A TW200633496A TW 200633496 A TW200633496 A TW 200633496A TW 094146676 A TW094146676 A TW 094146676A TW 94146676 A TW94146676 A TW 94146676A TW 200633496 A TW200633496 A TW 200633496A
Authority
TW
Taiwan
Prior art keywords
electron beam
shifts
scanning electron
scanning
axis direction
Prior art date
Application number
TW094146676A
Other languages
Chinese (zh)
Other versions
TWI290430B (en
Inventor
Daisuke Imai
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Publication of TW200633496A publication Critical patent/TW200633496A/en
Application granted granted Critical
Publication of TWI290430B publication Critical patent/TWI290430B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Electron Beam Exposure (AREA)
  • Radiation-Therapy Devices (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

The invention provides a scanning electron beam device. The scanning electron beam device can adjust the field shifts of scanning signal objectively, correct the corresponding relative positions of a plurality of light sources, and amend at least one of the position shifts among the rotational direction, the X axis direction, and the Y axis direction of the light sources. The scanning electron beam device scans the charged particles two-dimensionally and forms a scanning pattern on the specimen. A mark is disposed on a stage which supports the specimen, and the scanning electron beam device calculates the positional shifts of the coordinates of the stage or that of the scanning light in according to the mark. Hence according to the scanning pattern with marked label on the stage, the scanning electron beam device calculates the rotational direction shifts, and the Y axis direction shifts and the X axis direction shifts among a plurality of light sources. A symbol for scanning electron beam is disposed in each scanning domain of the scanning electron beam of each light source. In according to the positional shifts of the scanning pattern of the symbol, at least one positional shift amount of the rotational direction shifts, the Y axis direction shifts, and the X axis direction shifts of the light sources is obtained in the coordinates of the scanning electron beam.
TW094146676A 2005-02-02 2005-12-27 Scanning electron beam device TWI290430B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005026721 2005-02-02

Publications (2)

Publication Number Publication Date
TW200633496A true TW200633496A (en) 2006-09-16
TWI290430B TWI290430B (en) 2007-11-21

Family

ID=36777103

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094146676A TWI290430B (en) 2005-02-02 2005-12-27 Scanning electron beam device

Country Status (5)

Country Link
JP (1) JP4555909B2 (en)
KR (1) KR100893283B1 (en)
CN (1) CN101080801B (en)
TW (1) TWI290430B (en)
WO (1) WO2006082714A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4855875B2 (en) * 2006-09-06 2012-01-18 富士フイルム株式会社 Electron beam drawing apparatus and electron beam deviation compensation method
JP5164355B2 (en) * 2006-09-27 2013-03-21 株式会社日立ハイテクノロジーズ Charged particle beam scanning method and charged particle beam apparatus
US8391587B2 (en) * 2008-06-02 2013-03-05 Shimadzu Corporation Liquid crystal array inspection apparatus and method for correcting imaging range
CN102164635B (en) * 2008-10-23 2014-01-15 株式会社岛津制作所 Particle beam treatment apparatus
JP5472690B2 (en) * 2009-06-23 2014-04-16 株式会社島津製作所 Scanning beam irradiation device
JP5788719B2 (en) * 2011-06-09 2015-10-07 株式会社日立ハイテクノロジーズ Stage device and control method of stage device
JP6643072B2 (en) * 2015-12-10 2020-02-12 キヤノン株式会社 Microscope system and control method thereof
CN109166781A (en) * 2018-09-11 2019-01-08 镇江乐华电子科技有限公司 scanning transmission electron microscopic imaging method and system
JP7238672B2 (en) * 2019-07-25 2023-03-14 株式会社ニューフレアテクノロジー Multi-beam writing method and multi-beam writing apparatus
CN111879494B (en) * 2020-08-10 2022-05-17 中国空气动力研究与发展中心超高速空气动力研究所 Low-density wind tunnel flow field space measuring point position calibration method based on electron beam fluorescence
CN112259469B (en) * 2020-10-21 2022-10-18 上海华力集成电路制造有限公司 Semiconductor device critical dimension measuring method and method for obtaining SEM image

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940452A (en) * 1982-08-30 1984-03-06 Fujitsu Ltd Electron beam device
JP3238487B2 (en) * 1991-11-14 2001-12-17 富士通株式会社 Electron beam equipment
WO2001069643A1 (en) * 2000-03-13 2001-09-20 Hitachi, Ltd. Charged particle beam scanning device
JP4690586B2 (en) * 2000-06-09 2011-06-01 株式会社アドバンテスト Mask, electron beam deflection calibration method, electron beam exposure apparatus
JP3765988B2 (en) * 2001-02-23 2006-04-12 株式会社日立製作所 Electron beam visual inspection device
JP3349504B1 (en) * 2001-08-03 2002-11-25 株式会社日立製作所 Electron beam drawing equipment and electron microscope
JP2004356276A (en) * 2003-05-28 2004-12-16 Riipuru:Kk Charged beam proximity lithography method and system
JP3689097B2 (en) * 2003-09-03 2005-08-31 株式会社東芝 Charged beam drawing apparatus and drawing method

Also Published As

Publication number Publication date
WO2006082714A1 (en) 2006-08-10
JP4555909B2 (en) 2010-10-06
TWI290430B (en) 2007-11-21
CN101080801A (en) 2007-11-28
KR20070056142A (en) 2007-05-31
JPWO2006082714A1 (en) 2008-08-07
CN101080801B (en) 2010-06-23
KR100893283B1 (en) 2009-04-17

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees