CN101080670A - 通过表面改性以图案化处理的方法 - Google Patents

通过表面改性以图案化处理的方法 Download PDF

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Publication number
CN101080670A
CN101080670A CNA2005800428441A CN200580042844A CN101080670A CN 101080670 A CN101080670 A CN 101080670A CN A2005800428441 A CNA2005800428441 A CN A2005800428441A CN 200580042844 A CN200580042844 A CN 200580042844A CN 101080670 A CN101080670 A CN 101080670A
Authority
CN
China
Prior art keywords
treatment
substrate
surface modification
aperture mask
technique
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800428441A
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English (en)
Chinese (zh)
Inventor
史蒂文·D·泰斯
蒂莫西·D·邓巴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN101080670A publication Critical patent/CN101080670A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/0011—Pre-treatment or treatment during printing of the recording material, e.g. heating, irradiating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNA2005800428441A 2004-12-13 2005-11-22 通过表面改性以图案化处理的方法 Pending CN101080670A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/010,846 2004-12-13
US11/010,846 US20060128165A1 (en) 2004-12-13 2004-12-13 Method for patterning surface modification

Publications (1)

Publication Number Publication Date
CN101080670A true CN101080670A (zh) 2007-11-28

Family

ID=36216851

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800428441A Pending CN101080670A (zh) 2004-12-13 2005-11-22 通过表面改性以图案化处理的方法

Country Status (6)

Country Link
US (1) US20060128165A1 (OSRAM)
EP (1) EP1825327A2 (OSRAM)
JP (1) JP2008523618A (OSRAM)
KR (1) KR20080016781A (OSRAM)
CN (1) CN101080670A (OSRAM)
WO (1) WO2006065474A2 (OSRAM)

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CN104835721A (zh) * 2015-03-31 2015-08-12 上海华力微电子有限公司 改善ArF光阻在硅片表面上的黏附性的方法
CN107240544A (zh) * 2017-05-04 2017-10-10 中国科学院宁波材料技术与工程研究所 一种图形化薄膜、薄膜晶体管及忆阻器的制备方法
CN108682627A (zh) * 2018-05-18 2018-10-19 清华大学 图案化柔性有机薄膜及制备方法、层叠体及图案化方法

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EP3556911A1 (fr) * 2018-04-19 2019-10-23 Comadur S.A. Procédé de structuration d'un motif décoratif ou technique dans un objet réalisé en un matériau amorphe, semi-cristallin ou cristallin au moins partiellement transparent
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Publication number Priority date Publication date Assignee Title
CN104835721A (zh) * 2015-03-31 2015-08-12 上海华力微电子有限公司 改善ArF光阻在硅片表面上的黏附性的方法
CN107240544A (zh) * 2017-05-04 2017-10-10 中国科学院宁波材料技术与工程研究所 一种图形化薄膜、薄膜晶体管及忆阻器的制备方法
CN107240544B (zh) * 2017-05-04 2019-10-15 中国科学院宁波材料技术与工程研究所 一种图形化薄膜、薄膜晶体管及忆阻器的制备方法
CN108682627A (zh) * 2018-05-18 2018-10-19 清华大学 图案化柔性有机薄膜及制备方法、层叠体及图案化方法

Also Published As

Publication number Publication date
KR20080016781A (ko) 2008-02-22
WO2006065474A3 (en) 2006-10-05
JP2008523618A (ja) 2008-07-03
US20060128165A1 (en) 2006-06-15
WO2006065474A2 (en) 2006-06-22
EP1825327A2 (en) 2007-08-29

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Open date: 20071128