CN101076880B - 形成单层纳米结构的方法和器件以及包含这种单层的器件 - Google Patents
形成单层纳米结构的方法和器件以及包含这种单层的器件 Download PDFInfo
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- 229910052905 tridymite Inorganic materials 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
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Abstract
Description
Claims (93)
Applications Claiming Priority (7)
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US60/671,134 | 2005-04-13 | ||
PCT/US2005/020104 WO2005122235A2 (en) | 2004-06-08 | 2005-06-07 | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
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KR100900569B1 (ko) * | 2007-03-29 | 2009-06-02 | 국민대학교산학협력단 | 플로팅 게이트 형성 방법 및 이를 이용한 비휘발성 메모리 장치의 제조 방법 |
KR101046694B1 (ko) * | 2009-05-06 | 2011-07-05 | 서울대학교산학협력단 | 화학결합을 이용하여 금속 나노입자가 도입된 항균성 섬유의 제조방법 및 이로부터 형성된 항균성 섬유 |
US8383479B2 (en) * | 2009-07-21 | 2013-02-26 | Sandisk Technologies Inc. | Integrated nanostructure-based non-volatile memory fabrication |
KR101650841B1 (ko) * | 2010-04-27 | 2016-08-25 | 삼성전자주식회사 | 수직 구조의 비휘발성 메모리 소자 |
KR101950871B1 (ko) * | 2012-05-30 | 2019-02-21 | 엘지이노텍 주식회사 | 광학 부재, 발광장치 및 표시장치 |
CN104627949A (zh) * | 2013-11-14 | 2015-05-20 | 盛美半导体设备(上海)有限公司 | 微电子机械系统结构形成方法 |
JP6641217B2 (ja) * | 2016-03-30 | 2020-02-05 | 東京応化工業株式会社 | 金属酸化物膜形成用塗布剤及び金属酸化物膜を有する基体の製造方法 |
KR102011040B1 (ko) * | 2016-08-23 | 2019-10-21 | 한국과학기술연구원 | 금속나노구조체를 이용한 컬러 코팅층, 및 그 제조방법 |
CN107799672B (zh) * | 2017-10-30 | 2020-12-29 | 京东方科技集团股份有限公司 | 量子点层图案化的方法、量子点发光器件及其制作方法 |
CN108483392B (zh) * | 2018-05-15 | 2019-07-23 | 中国科学院化学研究所 | 微型立体器件及其制备方法和应用 |
KR102655061B1 (ko) * | 2019-03-25 | 2024-04-09 | 삼성디스플레이 주식회사 | 양자점층 제조 방법, 양자점층을 포함하는 발광 소자 제조 방법, 및 양자점층을 포함하는 표시 장치 |
CN110289363B (zh) * | 2019-06-28 | 2022-06-03 | 京东方科技集团股份有限公司 | 纳米粒子层图案化的方法、量子点发光器件及显示装置 |
CN114649484A (zh) * | 2020-12-17 | 2022-06-21 | 京东方科技集团股份有限公司 | 一种量子点器件、显示装置和量子点器件的制作方法 |
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CN1320931A (zh) * | 2001-04-02 | 2001-11-07 | 中国科学院长春应用化学研究所 | 可控纳米导线的物理化学制备方法 |
US6586785B2 (en) * | 2000-06-29 | 2003-07-01 | California Institute Of Technology | Aerosol silicon nanoparticles for use in semiconductor device fabrication |
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US2000615A (en) * | 1935-03-04 | 1935-05-07 | Chester H Roth | Hosiery |
US6159620A (en) * | 1997-03-31 | 2000-12-12 | The Regents Of The University Of California | Single-electron solid state electronic device |
KR20010099655A (ko) * | 1998-09-28 | 2001-11-09 | 블라디미르 맨체프스키 | Mems 장치의 기능 소자로서의 탄소 나노튜브를제조하기 위한 방법 |
JP2001168317A (ja) * | 1999-12-13 | 2001-06-22 | Nec Corp | 金属微粒子秩序構造形成方法 |
US6297095B1 (en) * | 2000-06-16 | 2001-10-02 | Motorola, Inc. | Memory device that includes passivated nanoclusters and method for manufacture |
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US6586785B2 (en) * | 2000-06-29 | 2003-07-01 | California Institute Of Technology | Aerosol silicon nanoparticles for use in semiconductor device fabrication |
CN1320931A (zh) * | 2001-04-02 | 2001-11-07 | 中国科学院长春应用化学研究所 | 可控纳米导线的物理化学制备方法 |
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KR101424966B1 (ko) | 2014-08-01 |
CN101426639B (zh) | 2012-11-14 |
KR20070022856A (ko) | 2007-02-27 |
CN101426639A (zh) | 2009-05-06 |
KR101255001B1 (ko) | 2013-04-17 |
CN101076880A (zh) | 2007-11-21 |
KR20070022145A (ko) | 2007-02-23 |
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