CN101075641A - N沟道薄膜晶体管及使用其的显示装置与电子器件 - Google Patents

N沟道薄膜晶体管及使用其的显示装置与电子器件 Download PDF

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CN101075641A
CN101075641A CN200610127181.XA CN200610127181A CN101075641A CN 101075641 A CN101075641 A CN 101075641A CN 200610127181 A CN200610127181 A CN 200610127181A CN 101075641 A CN101075641 A CN 101075641A
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林敬伟
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Abstract

本发明公开了一种N沟道TFT以及使用该TFT的OLED显示装置和电子器件。所述N沟道TFT包含：衬底、在衬底上的有源层，其中有源层包含N型源极区域和N型漏极区域、在有源层上的栅极介电层、以及在栅极介电层上的栅极区域。重掺杂的源极区域的至少一部分位于栅极区域的下面，且轻掺杂的漏极区域的至少一部分位于栅极区域的下面。

Description

N沟道薄膜晶体管及使用其的显示装置与电子器件
技术领域
本发明涉及一种N沟道TFT，特别涉及具有独特结构的一种N沟道TFT以及使用该TFT的的OLED显示装置与电子器件。
背景技术
由于能自发光，所以OLED不需要液晶显示组件(LCD)中所必需的背光，且因此在制造更薄的装置时，OLED最合适。同样，自发光OLED的可见度较高且在视角方面没有限制。这些是对近年来接受使用OLED的发光装置作为显示组件来代替CRT和LCD的关注的原因。
OLED显示装置的驱动电路可分为两种，即电压驱动电路和电流驱动电路。然而，无论使用哪种驱动电路，薄膜晶体管(TFT)均用作驱动晶体管，用于调节提供到OLED的OLED电流。参看图1，提供常规OLED像素10的电路图。如图1中所示，P沟道TFT 12的栅极端子由穿过晶体管100且存储在电容器102中的控制信号来控制，用于调节提供到OLED 14的OLED电流。
因为OLED的发光度完全取决于P沟道TFT 12的阈值电压和迁移率，所以即使TFT特性有少量变化，显示图像均匀性也会较差。
如图2中所示，为了改进图像均匀性，现有技术使用N沟道TFT来代替P沟道TFT，以减少由阈值电压变化所导致的影响。因为流经OLED的电流取决于驱动N-TFT的Vgs和Vth以及越过OLED的电压，所以负反馈效应(negative feedback effect)使得流经OLED的电流更均匀，因此导致良好的图像均匀性。然而，热载流子效应(hot-carrier effect)使得N沟道TFT 22不可靠，且因此整个电路的寿命缩短。
发明内容
因此，本发明针对N沟道TFT和使用其的OLED显示装置和电子器件，使得热载流子效应可减少且整个电路的寿命可改善。
本发明针对N沟道TFT。所述N沟道TFT包含：衬底、在所述衬底上的有源层，其中所述有源层包含N型源极区域和N型漏极区域、在有源层上的栅极介电层、以及在所述栅极介电层上的栅极区域。所述源极区域包含重掺杂的源极区域，且所述重掺杂的源极区域的至少一部分位于所述栅极区域的下面。所述漏极区域包含第一掺杂漏极区域和第二掺杂漏极区域，且第一掺杂漏极区域的掺杂浓度低于第二掺杂漏极区域的掺杂浓度。第一掺杂漏极区域为轻掺杂的漏极区域，且所述轻掺杂的漏极区域的至少一部分位于所述栅极区域的下面。
另一方面，本发明针对OLED显示装置，其包含数据驱动器、扫描驱动器和有源区。所述数据驱动器驱动多个数据线，而扫描驱动器驱动多个扫描线。所述有源区包含多个OLED像素。所述OLED像素中的至少一个包含控制电路和OLED元件。所述控制电路根据一个数据线和一个扫描线而产生数据电流，其中控制电路包含至少一个如上文所提及的N沟道TFT。
再一方面，本发明针对电子器件，其包含用于产生用于显示图像的图像信号的信号发生器和如上所述提供的OLED显示装置。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，并可依照说明书的内容予以实施，以下以本发明的优选实施例并配合附图详细说明如后。
附图说明
本发明包括附图以提供对本发明的进一步理解，且附图并入本说明书中并组成其一部分。附图说明本发明的实施例，且和描述内容一起用于阐释本发明的原理。
图1是常规OLED像素的电路图。
图2是另一常规OLED像素的电路图。
图3是展示根据本发明一个实施例的本文所使用的电子器件和OLED装置的电路方框图。
图4是根据本发明一个实施例的N沟道TFT的剖面图。
图5是根据本发明第二实施例的N沟道TFT的剖面图。
图6是根据本发明第三实施例的N沟道TFT的剖面图。
图7是根据本发明第四实施例的N沟道TFT的剖面图。
图8是根据本发明第五实施例的N沟道TFT的剖面图。
图9是根据本发明第六实施例的N沟道TFT的剖面图。
简单符号说明
4：有源层                                 10、342a、342b、342c：像素
12：P沟道TFT                              14：OLED
22：N沟道TFT                              30：电子器件
40：衬底                                  41：源极区域
42：漏极区域                              45：栅极介电层
47：栅极区域                              100：晶体管
102：电容器                               300：信号发生器
310：显示装置                             320：数据驱动器
322a、322b：数据线                        330：扫描驱动器
332a、332b、332c：扫描线                  340：有源区
410、410a、410b、410c：重掺杂的源极区域   415：轻掺杂的源极区域
420、420a：重掺杂的漏极区域               425、425a、425b：轻掺杂的漏极区域
427：掺杂的漏极区域                       d1、d2：距离
具体实施方式
现将详细参考本发明的当前优选实施例，以附图来说明本发明的实例。只要有可能，相同的参考数字用于附图和描述内容中以指代相同或相似部分。
图3是展示根据本发明一个实施例的本文所使用的电子器件和显示装置的电路方框图。电子器件30包含信号发生器300和显示装置310。所述显示装置310可为OLED显示装置，或LCD显示装置。举例来说，所述电子器件30可为移动电话、数码相机、PDA(个人数字助理)、笔记本计算机、台式计算机、电视机、车载显示器、或便携式DVD播放器。信号发生器300产生用于显示图像的图像信号和/或控制信号，且将所述图像信号和/或控制信号发送到显示装置310。
显示装置310(例如，OLED显示装置)包含数据驱动器320，用于根据图像信号来驱动多个数据线322a、322b等；扫描驱动器330，用于根据控制信号来驱动多个扫描线332a、332b、332c等；和有源区340，其包含多个OLED像素342a、342b、342c等，用于在数据线和扫描线的控制下显示图像。对于正常操作，OLED像素由所述数据线中的一个和所述扫描线中的一个来控制。举例来说，OLED像素342a由数据线322a和扫描线332a来控制，OLED像素342b由数据线322a和扫描线332b来控制，且OLED像素342c由数据线322a和扫描线332c来控制。
在所述实施例中，OLED像素可为图3中展示的一个。然而，本领域普通技术人员应知道，当至少一个N沟道TFT用于不同驱动结构时，具有不同驱动结构的其它OLED像素可应用于此处。
根据本发明的一些实施例，N沟道TFT包括源极区域和漏极区域。所述源极区域包括重掺杂的源极区域，且所述重掺杂的源极区域的至少一部分位于所述栅极区域的下面。所述漏极区域包括轻掺杂的漏极区域，且所述轻掺杂的漏极区域的至少一部分位于所述栅极区域的下面。在显示装置中，例如在OLED显示装置中，N沟道TFT可充当驱动TFT或开关TFT。
参看图4，提供根据本发明一个实施例的N沟道TFT的剖面图。在所述实施例中，有源层4形成于衬底40上。栅极介电层45形成于有源层4上，且栅极区域47形成于栅极介电层45上。有源层4包括源极区域41和漏极区域42。源极区域41包含重掺杂的源极区域410和轻掺杂的源极区域415，其中轻掺杂的源极区域415的掺杂浓度低于重掺杂的源极区域410的掺杂浓度。类似地，漏极区域42包含重掺杂的漏极区域420和轻掺杂的漏极区域425，其中轻掺杂的漏极区域425的掺杂浓度低于重掺杂的漏极区域420的掺杂浓度。
本发明的一些实施例的特征在于重掺杂的源极区域的至少一部分位于栅极区域的下面，且轻掺杂的漏极区域的至少一部分位于栅极区域的下面。如图4中所示，重掺杂的源极区域41的一部分位于栅极区域47的下面，且轻掺杂的漏极区域425的整个部分位于栅极区域47的下面。重掺杂的源极区域410与栅极区域47重叠的重叠距离d1不受限制。举例来说，重掺杂的源极区域410可与栅极区域47重叠至少1μm，例如1μm到3μm。轻掺杂的漏极区域425与栅极区域47重叠的重叠距离d2不受限制。举例来说，轻掺杂的漏极区域425可与栅极区域47重叠至少1μm，例如1μm到3μm。
本发明可由其它结构来实施。举例来说，参看图5，提供根据本发明第二实施例的N沟道TFT的剖面图。第二实施例与第一实施例的不同在于源极区域仅包含重掺杂的源极区域410a。另外，参看图6，提供根据本发明第三实施例的N沟道TFT的剖面图。第三实施例与第一实施例的不同在于轻掺杂的漏极区域425a的仅一部分在栅极区域47的下面。
此外，参看图7，提供根据本发明第四实施例的N沟道TFT的剖面图。第四实施例与第三实施例的不同在于源极区域仅包含重掺杂的源极区域410b。参看图8，提供根据本发明第五实施例的N沟道TFT的剖面图。第五实施例与第三实施例的不同在于掺杂的漏极区域427形成于轻掺杂的漏极区域425b与重掺杂的漏极区域420a之间。此外，掺杂的漏极区域427的掺杂浓度高于轻掺杂的漏极区域425b的掺杂浓度且低于重掺杂的漏极区域420a的掺杂浓度。
图9是根据本发明第六实施例的N沟道TFT的剖面图。第六实施例与第五实施例的不同在于源极区域仅包含重掺杂的源极区域410c。
存在很多其它N沟道TFT结构，能够根据由本发明提供的概念来达到；然而此处我们不能提及所有这些N沟道TFT结构。总之，根据本发明的一些实施例，由于重掺杂的源极区域的至少一部分位于栅极区域的下面，所以可减少Vth(阈值电压)变化。因此，可改进TFT特性的均匀性，因此改进OLED的发光均匀性。另外，由于轻掺杂的漏极区域的至少一部分位于栅极区域的下面，所以可减少热载流子效应且可提高TFT的可靠性。
以上所述，仅是本发明的优选实施例而已，并非对本发明作任何形式上的限制，虽然本发明已以优选实施例揭露如上，然而并非用以限定本发明，任何本领域技术人员，在不脱离本发明技术方案范围内，应可利用上述揭示的结构及技术内容作出些许的更动或修饰为等同变化的等效实施例，但是凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。

Claims (14)

1.一种N沟道TFT，包含：
衬底；
在所述衬底上的有源层，其中所述有源层包含N型源极区域和N型漏极区域；
在所述有源层上的栅极介电层；和
在所述栅极介电层上的栅极区域；
其中所述源极区域包含重掺杂的源极区域，其中所述重掺杂的源极区域的至少一部分位于所述栅极区域的下面，
其中所述漏极区域包含第一掺杂漏极区域和第二掺杂漏极区域，其中所述第一掺杂漏极区域的掺杂浓度低于所述第二掺杂漏极区域的掺杂浓度，其中所述第一掺杂漏极区域为轻掺杂的漏极区域，其中所述轻掺杂的漏极区域的至少一部分位于所述栅极区域的下面。
2.根据权利要求1所述的N沟道TFT，其中所述漏极区域进一步包含第三掺杂漏极区域，其中所述第三掺杂漏极区域形成于所述第一掺杂漏极区域与所述第二掺杂漏极区域之间，且所述第三掺杂漏极区域的掺杂浓度在所述第一掺杂漏极区域的掺杂浓度与所述第二掺杂漏极区域的掺杂浓度之间。
3.根据权利要求1所述的N沟道TFT，其中所述源极区域包含第一掺杂源极区域和第二掺杂源极区域，所述第一掺杂源极区域的掺杂浓度低于所述第二掺杂源极区域的掺杂浓度，且所述源极区域延伸，使得所述第二掺杂源极区域的一部分在所述栅极区域的下面。
4.根据权利要求3所述的N沟道TFT，其中所述源极区域进一步包含第三掺杂源极区域，其中所述第三掺杂源极区域形成于所述第一掺杂源极区域与所述第二掺杂源极区域之间，且所述第三掺杂源极区域的掺杂浓度在所述第一掺杂源极区域的掺杂浓度与所述第二掺杂源极区域的掺杂浓度之间。
5.根据权利要求1所述的N沟道TFT，其中所述重掺杂的源极区域与所述栅极区域重叠至少1μm。
6.根据权利要求5所述的N沟道TFT，其中所述重掺杂的源极区域与所述栅极区域重叠1μm到3μm。
7.根据权利要求1所述的N沟道TFT，其中所述轻掺杂的漏极区域与所述栅极区域重叠至少1μm。
8.根据权利要求7所述的N沟道TFT，其中所述轻掺杂的漏极区域与所述栅极区域重叠1μm到3μm。
9.一种显示装置，包含：
数据驱动器，用于驱动多个数据线；
扫描驱动器，用于驱动多个扫描线；和
有源区，包含多个像素，其中所述像素中的至少一个包含：
控制电路，根据所述数据线中的一个和所述扫描线中的一个来产生数据电流，所述控制电路包含至少一个N沟道TFT，其包含：
衬底；
在所述衬底上的有源层，其中所述有源层包含N型源极区域和N型漏极区域；
在所述有源层上的栅极介电层；和
在所述栅极介电层上的栅极区域；
其中所述源极区域包含重掺杂的源极区域，其中所述重掺杂的源极区域的至少一部分位于所述栅极区域的下面，
其中所述漏极区域包含第一掺杂漏极区域和第二掺杂漏极区域，其中所述第一掺杂漏极区域的掺杂浓度低于所述第二掺杂漏极区域的掺杂浓度，其中所述第一掺杂漏极区域为轻掺杂的漏极区域，其中所述轻掺杂的漏极区域的至少一部分位于所述栅极区域的下面。
10.根据权利要求9所述的显示装置，其中所述控制电路包含驱动TFT，且所述驱动TFT为所述N沟道TFT。
11.根据权利要求9所述的显示装置，其中所述控制电路包含开关TFT，且所述开关TFT为所述N沟道TFT。
12.根据权利要求9所述的显示装置，其中所述显示装置为OLED显示装置。
13.一种电子器件，包含：
图像发生器，产生用于显示图像的图像信号；和
显示装置，其包含：
数据驱动器，用于根据所述图像信号驱动多个数据线；
扫描驱动器，用于驱动多个扫描线；和
有源区，包含多个像素，其中至少一个所述像素包含：
控制电路，根据所述数据线中的一个和所述扫描线中的一个来产生数据电流，所述控制电路包含至少一个N沟道TFT，其包含：
衬底；
在所述衬底上的有源层，其中所述有源层包含N型源极区域和N型漏极区域；
在所述有源层上的栅极介电层；和
在所述栅极介电层上的栅极区域，
其中所述源极区域包含重掺杂的源极区域，其中所述重掺杂的源极区域的至少一部分位于所述栅极区域的下面，
其中所述漏极区域包含第一掺杂漏极区域和第二掺杂漏极区域，其中所述第一掺杂漏极区域的掺杂浓度低于所述第二掺杂漏极区域的掺杂浓度，其中所述第一掺杂漏极区域为轻掺杂的漏极区域，其中所述轻掺杂的漏极区域的至少一部分位于所述栅极区域的下面。
14.根据权利要求13所述的电子器件，其中所述电子器件为移动电话、数码相机、个人数字助理、笔记本计算机、台式计算机、电视机、车载显示器或便携式DVD播放器。
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