CN101060154A - Ppn-type light-emitting transistor and its manufacture method - Google Patents
Ppn-type light-emitting transistor and its manufacture method Download PDFInfo
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- CN101060154A CN101060154A CNA2007100280695A CN200710028069A CN101060154A CN 101060154 A CN101060154 A CN 101060154A CN A2007100280695 A CNA2007100280695 A CN A2007100280695A CN 200710028069 A CN200710028069 A CN 200710028069A CN 101060154 A CN101060154 A CN 101060154A
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Abstract
The related high-efficient PPN-type luminous transistor based on III-V or II-VI family compound comprises: a substrate, a buffer layer, a N-type Prague reflection layer, a N-type electron emission layer, an emission electrode, a multi-quantum-trap active luminous layer, a narrow band-gap (P-)-type base ohmic contacting an electrode, and a broad band-gap (P+)-type base ohmic contacting an electrode. This product is well controlled.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of PPn type lighting transistor and preparation method thereof.
Background technology
The semiconductive luminescent materials that II-VI family and III-V compounds of group have direct band-to-band transition, the emission wavelength of material covers from infrared to the whole wave band of ultraviolet.
In the prior art, LED basic structure is to be made of P type electrode, active luminous zone and N type electrode.P end and the N termination of LED are gone in the circuit, pass through constant current source power supply, the terminal voltage of regulating LED is the luminous intensity of may command LED, in the LED display technology, the general method control luminous intensity that adopts control LED fluorescent lifetime duty ratio is promptly regulated illumination effect by the control fluorescent lifetime and the ratio of fluorescent lifetime not.But this control method needs to use transistor to provide and irritates the electric current input, produces a large amount of heat, and regulating simultaneously is not very convenient relatively.
At present, also do not have the technology of ripe manufacturing lighting transistor, still be in the preliminary research stage.Main method has: a kind of is the NPN type luminescent crystal tube device of making according to the conventional transistor principle, both utilized the p type doped region of device luminous, control as the base again simultaneously, but because the base is very thin, most electronics do not have the hole-recombination in timely and the base luminous, arrived n type doping collector region but directly pass the base, most of electronics is used for amplifying the base electric current, and it is luminous to have only minority electrons to participate in, and luminous efficiency is not high.Another kind is that the real space shifts lighting transistor, be when adding forward voltage by source electrode with between draining, electronics is after source electrode and drain electrode are accelerated to certain energy, just can pass through real space transfer effect, enter active area, the hole-recombination that is injected into active area with grid is luminous, still, because the electron injection efficiency of real space transfer effect is very low, therefore the luminous efficiency of this lighting transistor is also very low.
Summary of the invention
The objective of the invention is the low defective of luminous efficiency, a kind of ppn type lighting transistor of the high-luminous-efficiency based on III-V compounds of group or II-VI compounds of group is provided at existing lighting transistor.
Another object of the present invention provides the preparation method of above-mentioned ppn type lighting transistor.
Ppn type lighting transistor of the present invention comprises substrate, be formed at resilient coating on the substrate, be formed at n type Bragg reflecting layer on the resilient coating, be formed at n type electron emission layer on the n type Bragg reflecting layer, with the emission electrode of n type electron emission layer ohmic contact, be formed at Multiple Quantum Well active illuminating layer on the n type electron emission layer, be formed at the narrow band gap p on the Multiple Quantum Well active illuminating layer
-The type base layer is with p
-The type base layer contacts by the electrode of ohmic contact formation, by sudden change homotype heterojunction and is formed at p
-Broad-band gap p on the type base layer
+Collector layer and and p that type mixes
+The electrode of type collector layer ohmic contact.
Described narrow band gap p
-The preferred 50-150nm of type base layer thickness.
The preferred sapphire of described substrate, silicon, carborundum, GaAs or earth silicon material.
Among the present invention, the III-V compound material can adopt the Ga (gallium) or Al (aluminium) element of III family, and the compound formed of the N of V family (nitrogen), As elements such as (arsenic), for example, and p
+The type collector layer can mix up the Mg material preparation by GaAs and obtain p
-The type base layer can mix up Mg by GaAs, the In material preparation obtains, and the Multiple Quantum Well active illuminating layer can mix up the In material preparation by GaAs and obtain.
The II-VI compound material can adopt the Zn of II family element, and the compound formed of element such as the O of VI family element, for example, and p
+Type collector layer, p
-The type base layer can be obtained by ZnO doping N, As material preparation, and the Multiple Quantum Well active illuminating layer can be obtained by ZnO doping Be, Al material preparation.
The structural principle of lighting transistor of the present invention: by the p of broad-band gap
+The p of type collector region (emitter region, hole), narrow band gap
-Type base stage controlled area, active luminous zone and n type electron-emitting area are formed.Comprising a compound semiconductor material substrate, form resilient coating on substrate, form n type Bragg reflecting layer, is n type electron emission layer then, regrowth Multiple Quantum Well active illuminating layer, continued growth narrow band gap p
-Type base layer, the regrowth narrow broad-band gap p that suddenlys change
+The doping current collection layer, p
-Type base layer and p
+Type doping collector layer has formed epitaxial wafer at last by the contact of sudden change homotype heterojunction, is prepared into corresponding p by the semiconductor planar technology
+Type electrode, p
-Type electrode and n type electrode have formed transistor device.Wherein, in the III-V compounds of group, as materials such as GaN, GaAs and GaP, the band gap width that changes material by the component of controlling the In material forms controlled area or luminous zone, utilizes the material doped formation of Mg p type district, and Si etc. mix and form n type district.
The operation principle of lighting transistor of the present invention: during the device operate as normal, at p
+Add forward voltage V between type collector electrode and the n type emitter
Pn, p
-Base stage and p
+Add forward voltage V between the type collector electrode
Pp, the hole is by p
+Type collector region (emitter region, hole) is crossed the hole quantum well and is entered p
-The base passes through p again
-The type base enters active area, V
PpControlling the height of hole, base quantum well potential barrier, controlling number of cavities, playing the effect of trim luminous intensity by heterojunction, enter the electronics of active area with by emitter region, p type hole injected holes recombination luminescence, wherein, 1V＜V
Pn＜15V, 0.1V＜V
Pp＜8V.
The preparation method of ppn type lighting transistor of the present invention comprises the steps:
(1), utilizes metal organic chemical vapor deposition or molecular beam epitaxy technique, the growth III-V GaN of family, GaAs or GaP material;
(2), select the substrate of sapphire, silicon, GaAs or an earth silicon material, grown buffer layer;
(3), the Bragg reflecting layer of the multiply periodic n type of buffer growth;
(4), continued growth donor doping concentration is 10
17～10
19Cm
-3The electron-emitting area of n section bar material;
(5), at In
1-xGa
xN, In
1-xGa
xAs or (AlGa)
xIn
1-xIn the P material, the component of the value control epitaxial loayer In material by changing x, the multiply periodic superlattice structure of continued growth forms the Multiple Quantum Well active illuminating layer, 0.03＜x＜0.95;
(6), regrowth acceptor doping concentration is 10
15～10
18Cm
-3, thickness at 50nm to the p between the 150nm
-The type base layer;
(7), change acceptor doping concentration 10
18～5 * 10
19m
-3, the p of growth sudden change
+The type collector layer obtains the epitaxial wafer of light emitting transistor;
(8), utilize the method for photoetching and chemical corrosion, etching n type laminar surface utilizes the method for photoetching to form n type ohm contact electrode figure again, utilizes method of evaporating evaporating Al/Au alloy material, forms the emitter region Ohm contact electrode;
(9), make the p-electrode of base and the p of collector region
+The type electrode obtains having the ppn type lighting transistor of control end.
The present invention compared with prior art has following advantage: (1) has adopted p
+Type, p
-Type, n transistor npn npn structure; (2) has p
-The type base stage can control luminous; (3) luminous power of lighting transistor is higher than the power of lighting transistor in the prior art.
Description of drawings
Fig. 1 is a lighting transistor cross-sectional view of the present invention; Among the figure, the 1st, substrate, the 2nd, resilient coating, the 3rd, n type Bragg reflecting layer, the 4th, n type emitter region, the 5th, active area, the 6th, p-type base, the 7th, p
+The type collector region.The 8th, n electrode, the 9th, p-electrode, the 10th, p
+Electrode.
Fig. 2 is the energy band diagram of lighting transistor of the present invention, and among the figure, 11 is 6 contact the hole quantum well of formation with 7 by sudden change homotype heterojunction.
Embodiment
As shown in Figure 1, ppn type lighting transistor of the present invention comprise substrate 1, be formed at resilient coating 2 on the substrate 1, be formed at n type Bragg reflecting layer 3 on the resilient coating 2, be formed at n type electron emission layer 4 on the n type Bragg reflecting layer 3, with the emission electrode 8 of n type electron emission layer 4 ohmic contact, be formed at Multiple Quantum Well active illuminating layer 5 on the n type electron emission layer 4, be formed at the narrow band gap p on the Multiple Quantum Well active illuminating layer 5
-Type base layer 6 (thickness at 50nm between the 150nm) is with p
- Type base layer 6 contacts by the electrode 9 of ohmic contact formation, by sudden change homotype heterojunction and is formed at p
-Broad-band gap p on the type base layer 6
+ Collector layer 7 and and p that type mixes
+The electrode 10 of collector layer 7 ohmic contact that type mixes.
Among Fig. 1, the hole is by p
+ Type collector region 7 enters active area 5 through p-type base 6, then at active area 5 and by n type electron-emitting area 4 injected electrons recombination luminescences.Wherein be applied to p
-Voltage control on the type base electrode 9 hole, base quantum well barrier height, and then has controlled the number of cavities by heterojunction, has played the effect of trim luminous intensity.
Fig. 2 has illustrated the energy band diagram of lighting transistor of the present invention, can know by energy band diagram and to find out, base 6 contacts the effect that the quantum well 11 that forms can play the restriction hole with the sudden change homotype heterojunction of collector electrode 7, can regulate the potential barrier of different quantum well 11 by the voltage on the control base 6, controlled the quantity of hole, thereby can play the luminous effect of regulating by quantum well 11.
Utilize III-V compound material GaAs material preparation transistor.Select Sapphire Substrate for use, by the p of the n type electron-emitting area of broad-band gap, active luminous zone, narrow band gap
-Type base stage controlled area and p type collector region (emitter region, hole) constitute.Forming resilient coating 2 on n type GaAs material substrate 1, form n type Bragg reflecting layer 3 again, is n type electron emission layer 4 then, the active illuminating layer of continued growth Multiple Quantum Well again 5, and p then grows
- Type base layer 6, the p of continued growth sudden change again
+Type heavy doping collector layer 7, light dope p
- Type base layer 6 and p
+Type heavy doping emitter layer 7 is by the contact of sudden change homotype heterojunction, at close p
-Interface one side of type light dope base layer 6 forms quantum well 11, and the barrier height of quantum well is controlled by the voltage that is applied on the base 6, has formed epitaxial wafer.Be prepared into corresponding p by the semiconductor planar technology
+Type electrode 10, p
-Type electrode 9 and n type electrode 8 have formed transistor device.Wherein, at In
1-xGa
xIn the As material, change the component of In element, cause the band gap width that changes material to form controlled area or luminous zone, in the GaAs material, utilize material doped formations of Mg p type district, utilize the Si formation n type district of mixing by the value that changes x.
The preparation method of the lighting transistor of present embodiment is: utilize the MOCVD technology, growth GaAs material.Selecting n type GaAs is semiconductive material substrate 1, the thick resilient coating 2 of 0.5 μ m of growing.Bragg reflecting layer 3 by the multiply periodic n type of the doped growing of Si material.The material doped concentration of continued growth Si is 10
17Cm
-3The electron-emitting area 4 of n section bar material.At growth In
1-xGa
xDuring the N material (0.03＜x＜0.95), by changing the doping component of x value control In material, the multiply periodic superlattice structure of growing forms Multiple Quantum Well active area 5.Growth Mg doping content is 10 on Multiple Quantum Well active area 5
16Cm
-3P-type base 6.Continuing sudden change growth Mg doping content again is 10
17Cm
-3P
+ Type collector region 7 obtains the epitaxial wafer of light emitting transistor.By the semiconductor planar technology, utilize the method for photoetching and chemical corrosion, etching n type laminar surface utilizes the method for photoetching to form n type ohm contact electrode figure again, utilize method of evaporating evaporating Al/materials such as Au alloy, form emitter region Ohm contact electrode 8.Utilize said method, can make the p of base
-The p of electrode 9 and collector region
+Type electrode 10 obtains having the lighting transistor of control end.
Utilize II-VI compound material ZnO material preparation transistor.
Compare with embodiment 1, the difference of embodiment 2 is: adopt the ZnO material, mix up the Al element and form n type emitter region 4, mix up the N element and form active luminous zone 5, p
-Type 6, p
+Type district 7.
Other are with embodiment 1.
Claims (6)
1, a kind of ppn type lighting transistor, it is characterized in that comprising substrate, be formed at resilient coating on the substrate, be formed at n type Bragg reflecting layer on the resilient coating, be formed at n type electron emission layer on the n type Bragg reflecting layer, with the emission electrode of n type electron emission layer ohmic contact, be formed at Multiple Quantum Well active illuminating layer on the n type electron emission layer, be formed at the narrow band gap p on the Multiple Quantum Well active illuminating layer
-The type base layer is with p
-The type base layer contacts by the electrode of ohmic contact formation, by sudden change homotype heterojunction and is formed at p
-Broad-band gap p on the type base layer
+Collector layer and and p that type mixes
+The electrode of type collector layer ohmic contact.
2, lighting transistor according to claim 1 is characterized in that described narrow band gap p
-Type base layer thickness is 50-150nm.
3, lighting transistor according to claim 1 and 2 is characterized in that described substrate adopts sapphire, silicon, carborundum, GaAs or earth silicon material.
4, lighting transistor according to claim 3 is characterized in that p
+The type collector layer mixes up the Mg material preparation by GaAs and obtains p
-The type base layer by GaAs mix up Mg, the In material preparation obtains, the Multiple Quantum Well active illuminating layer mixes up the In material preparation by GaAs and obtains.
5, lighting transistor according to claim 3 is characterized in that p
+Type collector layer, p
-The type base layer is obtained by ZnO doping N, As material preparation, and the Multiple Quantum Well active illuminating layer is obtained by ZnO doping Be, Al material preparation.
6, the preparation method of the described ppn type of one of claim 1-5 lighting transistor is characterized in that comprising the steps:
(1), utilizes metal organic chemical vapor deposition or molecular beam epitaxy technique, the growth III-V GaN of family, GaAs or GaP material;
(2), select the substrate of sapphire, silicon, GaAs or an earth silicon material, grown buffer layer;
(3), the Bragg reflecting layer of the multiply periodic n type of buffer growth;
(4), continued growth donor doping concentration is 10
17～10
19Cm
-3The electron-emitting area of n section bar material;
(5), at In
1-xGa
xN, In
1-xGa
xAs or (AlGa)
xIn
1-xIn the P material, the component of the value control epitaxial loayer In material by changing x, the multiply periodic superlattice structure of continued growth forms the Multiple Quantum Well active illuminating layer, 0.03＜x＜0.95;
(6), regrowth acceptor doping concentration is 10
15～10
18Cm
-3, thickness at 50nm to the p between the 150nm
-The type base layer;
(7), change acceptor doping concentration 10
18～5 * 10
19Cm
-3, the p of growth sudden change
+The type collector layer obtains the epitaxial wafer of light emitting transistor;
(8), utilize the method for photoetching and chemical corrosion, etching n type laminar surface utilizes the method for photoetching to form n type ohm contact electrode figure again, utilizes method of evaporating evaporating Al/Au alloy material, forms the emitter region Ohm contact electrode;
(9), make the p-electrode of base and the p of collector region
+The type electrode obtains having the ppn type lighting transistor of control end.
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|---|---|---|---|
| CNB2007100280695A CN100466313C (en) | 2007-05-21 | 2007-05-21 | Ppn-type light-emitting transistor and its manufacture method |
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|---|---|---|---|
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|---|---|
| CN101060154A true CN101060154A (en) | 2007-10-24 |
| CN100466313C CN100466313C (en) | 2009-03-04 |
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| CN111834506A (en) * | 2020-06-12 | 2020-10-27 | 福州大学 | Tripolar light-emitting tube with high power amplification factor and preparation method thereof |
| CN111834502A (en) * | 2020-06-12 | 2020-10-27 | 福州大学 | Three-pole luminous tube epitaxial structure and three-pole luminous chip |
| CN111834503A (en) * | 2020-06-12 | 2020-10-27 | 福州大学 | Nano tripolar light-emitting tube based on vertical nanostructure |
| CN111834504A (en) * | 2020-06-12 | 2020-10-27 | 福州大学 | Nano tripolar light-emitting tube with low driving voltage and manufacturing method thereof |
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Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05166920A (en) * | 1991-12-19 | 1993-07-02 | Matsushita Electron Corp | Semiconductor device and manufacture thereof |
| JPH09153645A (en) * | 1995-11-30 | 1997-06-10 | Toyoda Gosei Co Ltd | Group-iii nitride semiconductor light-emitting device |
| CN1084055C (en) * | 1998-01-06 | 2002-05-01 | 中国科学院半导体研究所 | Efficient LED and its making method |
| CA2536329A1 (en) * | 2003-08-22 | 2005-03-03 | The Board Of Trustees Of The University Of Illinois | Semiconductor device and method |
| JP4639649B2 (en) * | 2004-03-26 | 2011-02-23 | 住友電気工業株式会社 | Method for growing III-V compound semiconductor layer, epitaxial wafer, and semiconductor device |
-
2007
- 2007-05-21 CN CNB2007100280695A patent/CN100466313C/en not_active Expired - Fee Related
Cited By (9)
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|---|---|---|---|---|
| CN111834506A (en) * | 2020-06-12 | 2020-10-27 | 福州大学 | Tripolar light-emitting tube with high power amplification factor and preparation method thereof |
| CN111834502A (en) * | 2020-06-12 | 2020-10-27 | 福州大学 | Three-pole luminous tube epitaxial structure and three-pole luminous chip |
| CN111834503A (en) * | 2020-06-12 | 2020-10-27 | 福州大学 | Nano tripolar light-emitting tube based on vertical nanostructure |
| CN111834504A (en) * | 2020-06-12 | 2020-10-27 | 福州大学 | Nano tripolar light-emitting tube with low driving voltage and manufacturing method thereof |
| CN111834503B (en) * | 2020-06-12 | 2021-12-21 | 福州大学 | Nano tripolar light-emitting tube based on vertical nanostructure |
| CN111834504B (en) * | 2020-06-12 | 2021-12-21 | 福州大学 | Nano tripolar light-emitting tube with low driving voltage and manufacturing method thereof |
| CN111834502B (en) * | 2020-06-12 | 2021-12-21 | 福州大学 | Three-pole luminous tube epitaxial structure and three-pole luminous chip |
| CN118231415A (en) * | 2024-05-23 | 2024-06-21 | 南京信息工程大学 | Multi-frequency response bipolar transistor infrared polarization gain photoelectric detection array |
| CN118231415B (en) * | 2024-05-23 | 2024-08-02 | 南京信息工程大学 | Multi-frequency response bipolar transistor infrared polarization gain photoelectric detection array |
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| CN100466313C (en) | 2009-03-04 |
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