CN2596557Y - Light-emitting diode with multiple quantum trap structure - Google Patents
Light-emitting diode with multiple quantum trap structure Download PDFInfo
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- CN2596557Y CN2596557Y CN02289266U CN02289266U CN2596557Y CN 2596557 Y CN2596557 Y CN 2596557Y CN 02289266 U CN02289266 U CN 02289266U CN 02289266 U CN02289266 U CN 02289266U CN 2596557 Y CN2596557 Y CN 2596557Y
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Abstract
The utility model discloses a blue-light light-emitting diode with a GaN based multi-quantum well. The multi-quantum well of the light-emitting diode comprises an AlGaN layer with p-type doping, an AlGaN layer with n-type doping, N pieces of quantum wells and two GaN isolation layers without doping, wherein the quantum wells are positioned between the AlGaN layers and is composed of a GaN layer without doping and an InGaN layer without doping; one of the two GaN isolation layers without doping is arranged between the AlGaN layer with p-type doping and the N pieces of quantum wells, and the other GaN isolation layer without doping is arranged between the AlGaN layer with n-type doping and the N pieces of quantum wells. The position of the p-n structure can be adjusted effectively to be positioned at the multi-quantum well area by reasonably adjusting the thickness of the GaN isolation layer, and thus the luminous intensity of the light-emitting diode can be effectively enhanced.
Description
Technical field
The utility model relates to a kind of light-emitting diode, relate in particular to that semi-conducting material by enough broad-band gaps forms with at the green glow of visible light to the luminous light-emitting diode of purple light part.
Background technology
The semiconductor light-emitting-diode light source life is long, low in energy consumption, good reliability, has obtained general approval in the many fields that produce and live, and is of many uses.Over past ten years, made significant headway on basic research and business development with the short-wave long light-emitting diode that the basic blue light diode of GaN is representative, make human high duplication, the long-life panchromatic white light source that comprises of obtaining, known GaN based diode structure can be with reference to United States Patent (USP) 4918497,4966862,5027168 and 5338944.
Multi-quantum pit structure in the GaN based light-emitting diode of present widespread usage in the world as shown in Figure 1, InGaN/GaN Multiple Quantum Well 122 among the figure, form by GaN potential barrier 123 and InGaN potential well 124 multilayers overlapping, be formed with the A1GaN layer 121 that the p type mixes on it, it is formed with the AlGaN layer 120 that the n type mixes down.
Said structure is mixed Si on the GaN potential barrier 123 when growing InGaN/GaN Multiple Quantum Well 122, can improve the crystal mass of GaN like this, impels the In in the quantum well to be condensed into In group simultaneously, and led lighting is strengthened.But also there is significant disadvantages in this structure: at first, potential barrier is mixed Si and introduced n type impurity in quantum well, make p-n junction depart from the InGaN/GaN multiquantum well region, thereby when light-emitting diode works in forward bias, the minority carrier of quantum well region is the hole, and the hole is luminous with electron recombination in diffusion process, but because the mobility in hole is very low, diffusion length is very little, and the also corresponding minimizing with the hole number of electronics of radiation recombination takes place; On the contrary, the minority carrier in the GaN layer 115 that the p type mixes is an electronics, and its diffusion length is very long, and this just makes the recombination region major part be positioned at the GaN layer 115 that the p type mixes, and the radiation recombination that occurs in the Multiple Quantum Well weakens; Secondly, in this structure, mainly luminous when electronics and hole-recombination based on DA, increase along with the charge carrier injection, the DA center is tending towards saturated, unnecessary charge carrier can be compound by non-radiative recombination process, and greatly having limited with the InGaN/GaN Multiple Quantum Well is the further raising of the lumination of light emitting diode intensity of active area.
The utility model content
The technical problems to be solved in the utility model provides a kind of light-emitting diode of the GaN of comprising based multiquantum-well structure, makes electronics and hole mainly luminous by the band edge radiation recombination in quantum well, with the luminous efficiency of further raising light-emitting diode.
In order to achieve the above object, the utility model provides a kind of light-emitting diode with multi-quantum pit structure, comprises multi-quantum pit structure; GaN layer, transparency electrode and p type ohmic contact that p type on described multi-quantum pit structure mixes; GaN layer, GaN resilient coating, n type ohmic contact and substrate that n type under described multi-quantum pit structure mixes; It is characterized in that: this multi-quantum pit structure comprises N quantum well, be formed with a plain GaN separator on this N quantum well, be formed with plain the 2nd GaN separator under this N quantum well, the thickness of these two GaN separators is greater than 0nm and less than the arbitrary value between the 500nm.
In the such scheme, be characterized in that this multi-quantum pit structure also comprises: be formed with the AlGaN layer that the p type mixes on the GaN separator, its thickness is greater than 0nm and less than the arbitrary value between the 500nm; Be formed with the AlGaN layer that the n type mixes under the 2nd GaN separator, its thickness is greater than 0nm and less than the arbitrary value between the 500nm.
In the such scheme, be characterized in that this quantum well comprises plain barrier layer and plain potential well layer, the thickness of this potential barrier layer is greater than 1nm and less than the arbitrary value between the 500nm, the thickness of this potential well layer is greater than 1nm and less than the arbitrary value between the 100nm, and the band gap of this potential well layer is less than this barrier layer.
As from the foregoing, the utility model GaN based LED of multiple quantum wells structure is compared with the GaN based light-emitting diode structure of routine, tangible advantage is arranged: quantum well region p type mixes, can adjust the position of p-n junction effectively, make it to be positioned at the Multiple Quantum Well zone, thickness to the plain GaN separator of quantum well region both sides growths is adjusted, and also can adjust the position of p-n junction effectively; When the light-emitting diode operate as normal, radiation recombination takes place in whole quantum well region and hole in charge carrier, and efficient increases greatly; This structure makes electronics and hole mainly luminous by the band edge radiation recombination in quantum well simultaneously, has effectively strengthened the luminous intensity of light-emitting diode.
In addition, because the utility model GaN based light-emitting diode structure does not have specific (special) requirements to growth apparatus and process conditions during fabrication, this structure can not make subsequently growth and processing step complicated.
Description of drawings
Fig. 1 is the profile of known luminescence diode;
Fig. 2 is the profile of the utility model embodiment light-emitting diode;
Fig. 3 is the light fluorogram of the utility model embodiment light-emitting diode;
Fig. 4 is the current-voltage characteristic figure of the utility model embodiment light-emitting diode;
Fig. 5 is the luminosity of the utility model embodiment light-emitting diode and the relation of electric current.
Embodiment
The GaN based multiple quantum well blue light-emitting diode 25 of the utility model specific embodiment, as shown in Figure 2.Wherein multi-quantum pit structure comprises: the AlGaN layer 21 that the p type mixes; The AlGaN layer 20 that the n type mixes; N quantum well 22 between the AlGaN20 layer of AlGaN layer 21 that this p type mixes and the doping of this n type, the quantum well structure in this N quantum well comprises barrier layer 23 and potential well layer 24, the band gap of potential well layer 24 is less than barrier layer 23; Also generation has GaN separator 14-2 between AlGaN layer 21 that this p type mixes and this N quantum well 22; Also generation has GaN separator 14-1 between AlGaN layer 20 that this n type mixes and this N quantum well 22.
Above-mentioned GaN based multiquantum-well structure, the N in this N quantum well 22 can be arbitrary integer of 1 to 100.
Barrier layer 23 can comprise GaN, In for binary, ternary, quaternary compound or the mixture of being made up of Ga, In, Al, N
xGa
1-xN, Al
yGa
1-yN, In
aGa
bAl
1-a-bN, wherein 0＜x＜1; 0＜y＜=1; 0＜a＜1,0＜b＜1, and a+b＜=1 are preferably plain GaN.When selecting the molar content of Al and In, satisfy the band gap width of the band gap width of this layer greater than potential well layer.Its thickness can be greater than 1nm and less than the arbitrary value between the 500nm, and preferred value is 250nm.
Potential well layer 24 is binary, ternary, quaternary compound or the mixture of being made up of Ga, In, Al, N, comprises GaN, In
xGa
1-xN, Al
yGa
1-yN, In
aGa
bAl
1-a-bN, wherein 0＜x＜=1; 0＜y＜1; 0＜a＜1,0＜b＜1, and a+b＜=1 are preferably plain InGaN.When selecting the molar content of Al and In, satisfy the band gap width of the band gap width of this layer less than barrier layer.Its thickness is greater than 1nm and less than the arbitrary value between the 100nm, and preferred value is 50nm.
The AlGaN layer 20 that AlGaN layer 21 that the p type mixes and n type mix can be Al
xGa
1-xN, 0＜x＜=1 wherein, its thickness is greater than 0nm and less than the arbitrary value between the 500nm;
The AlGaN layer 20 that AlGaN layer 21 that the p type mixes and n type mix also can be for by Al
xGa
1-xThe superlattice structure that N and GaN form, 0＜x＜=1 wherein, Al wherein
xGa
1-xN barrier layer, thickness be＞0nm and＜arbitrary value between the 100nm, GaN potential well layer wherein, thickness are greater than 0nm and less than the arbitrary value between the 100nm, its periodicity is more than or equal to 1 and smaller or equal to 50 integer.
The dopant that above-mentioned p type mixes is an II family element, comprises Mg, Zn, and doping content is 1 * 10
16Cm
-3To 5 * 10
19Cm
-3The dopant that the n type mixes is an IV family element, comprises Si, and doping content is 1 * 10
16Cm
-3To 1 * 10
20Cm
-3
The thickness of GaN separator 14-1 and 14-2 is greater than 0nm and less than the arbitrary value between the 500nm, and preferred value is 200nm.
In the light-emitting diode 25 of this implementation, except the top multi-quantum pit structure of having introduced, also comprise: GaN layer 15, transparency electrode 16, p type ohmic contact 17 that the p type on described multi-quantum pit structure mixes; And at GaN layer 13 that the n type under the described multi-quantum pit structure mixes, GaN resilient coating 12, GaN resilient coating 11 that the n type mixes, be located at the n type ohmic contact 18 on the GaN layer 13 that the n type mixes, the above structure growth is on Sapphire Substrate 10.
The thickness of the GaN layer 15 that the p type mixes is more than or equal to 10nm and less than the arbitrary value between the 2000nm, and its dopant is an II family element, comprises Mg, Zn, and its doping content is 1 * 10
16Cm
-3To 5 * 10
19Cm
-3
The thickness of the GaN layer 13 that the n type mixes is more than or equal to 100nm with less than the arbitrary value between the 9000nm, and its dopant is an IV family element, comprises Si, and its doping content is 1 * 10
16Cm
-3To 1 * 10
30Cm
-3Between.
As shown in Figure 5, adopt the luminous intensity of the blue light diode of the utility model structure to reach 6mW, its forward voltage is 3.5V, as shown in Figure 4.
Claims (11)
1, a kind of light-emitting diode with multi-quantum pit structure comprises
Multi-quantum pit structure;
GaN layer, transparency electrode and p type ohmic contact that p type on described multi-quantum pit structure mixes;
GaN layer, GaN resilient coating, n type ohmic contact and substrate that n type under described multi-quantum pit structure mixes;
It is characterized in that:
This multi-quantum pit structure comprises N quantum well, be formed with a plain GaN separator on this N quantum well, be formed with plain the 2nd GaN separator under this N quantum well, the thickness of these two GaN separators is greater than 0nm and less than the arbitrary value between the 500nm.
2, the light-emitting diode with multi-quantum pit structure as claimed in claim 1, it is characterized in that this multi-quantum pit structure also comprises: be formed with the AlGaN layer that the p type mixes on the GaN separator, its thickness is greater than 0nm and less than the arbitrary value between the 500nm; Be formed with the AlGaN layer that the n type mixes under the 2nd GaN separator, its thickness is greater than 0nm and less than the arbitrary value between the 500nm.
3, the light-emitting diode with multi-quantum pit structure as claimed in claim 2, it is characterized in that this quantum well comprises plain barrier layer and plain potential well layer, the thickness of this potential barrier layer is greater than 1nm and less than the arbitrary value between the 500nm, the thickness of this potential well layer is greater than 1nm and less than the arbitrary value between the 100nm, and the band gap of this potential well layer is less than this barrier layer.
4,, it is characterized in that N in this N quantum well is for more than or equal to 1 and smaller or equal to 100 integer as claim 1,2 or 3 described light-emitting diodes with multi-quantum pit structure.
5,, it is characterized in that binary, ternary, quaternary compound or the mixture of this barrier layer for forming by Ga, In, Al, N as claim 1,2 or 3 described light-emitting diodes with multi-quantum pit structure; This potential well layer is binary, ternary, quaternary compound or the mixture of being made up of Ga, In, Al, N.
6,, it is characterized in that this barrier layer is plain GaN as claim 1,2 or 3 described light-emitting diodes with multi-quantum pit structure; This potential well layer is plain InGaN.
7,, it is characterized in that the AlGaN layer of this p type doping and the AlGaN layer that the n type mixes are Al as claim 2 or 3 described light-emitting diodes with multi-quantum pit structure
xGa
1-xN, or by Al
1Ga
1-xThe superlattice structure that N and GaN form, wherein 0＜x＜=1.
8, the light-emitting diode with multi-quantum pit structure as claimed in claim 7 is characterized in that described Al
xGa
1-xIn the superlattice that N and GaN form, this Al
xGa
1-xThe thickness of N barrier layer is greater than 0nm and less than the arbitrary value between the 100nm, and the thickness of this GaN potential well layer is greater than 0nm and less than the arbitrary value between the 100nm, and the periodicity of these superlattice is more than or equal to 1 and smaller or equal to 50 integer.
9, as claim 1,2 or 3 described light-emitting diodes with multi-quantum pit structure, it is characterized in that the dopant that described p type mixes is an II family element, doping content is 1 * 10
16Cm
-3To 5 * 10
19Cm
-3The dopant that described n type mixes is an IV family element, and doping content is 1 * 10
16Cm
-3To 1 * 10
20Cm
-3
10, as claim 1,2 or 3 described light-emitting diodes with multi-quantum pit structure, the thickness that it is characterized in that the GaN layer that this p type mixes is more than or equal to 10nm and less than the arbitrary value between the 2000nm, its dopant is an II family element, and doping content is 1 * 10
16Cm
-3To 5 * 10
19Cm
-3Between; The thickness of the GaN layer that this n type mixes is more than or equal to 100nm with less than the arbitrary value between the 9000nm, and its dopant is an IV family element, and doping content is 1 * 10
16Cm
-3To 1 * 10
20Cm
-3Between.
11, as claim 1,2 or 3 described light-emitting diodes with multi-quantum pit structure, it is characterized in that also being formed with the GaN resilient coating that the n type mixes between the GaN layer that this GaN resilient coating and this n type mix, this n type ohmic contact is formed on the GaN layer that this n type mixes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02289266U CN2596557Y (en) | 2002-09-30 | 2002-11-22 | Light-emitting diode with multiple quantum trap structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02256878.6 | 2002-09-30 | ||
| CN02256878 | 2002-09-30 | ||
| CN02289266U CN2596557Y (en) | 2002-09-30 | 2002-11-22 | Light-emitting diode with multiple quantum trap structure |
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|---|---|
| CN2596557Y true CN2596557Y (en) | 2003-12-31 |
Family
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100461472C (en) * | 2005-04-04 | 2009-02-11 | 中国科学院半导体研究所 | Wide-spectrum and large-power semiconductor ultra radiation light-emitting diode and producing method |
| CN101109724B (en) * | 2007-08-16 | 2010-05-19 | 中国科学院上海技术物理研究所 | Method for detecting quantum dot density inside multiple quantum well light emitting diode |
| CN102330072A (en) * | 2010-07-12 | 2012-01-25 | 三星Led株式会社 | Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same |
| CN101689523B (en) * | 2007-07-17 | 2012-02-22 | 住友电气工业株式会社 | Method for manufacturing electronic device, method for manufacturing epitaxial substrate, iii nitride semiconductor element and gallium nitride epitaxial substrate |
| CN115377259A (en) * | 2022-10-26 | 2022-11-22 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
-
2002
- 2002-11-22 CN CN02289266U patent/CN2596557Y/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100461472C (en) * | 2005-04-04 | 2009-02-11 | 中国科学院半导体研究所 | Wide-spectrum and large-power semiconductor ultra radiation light-emitting diode and producing method |
| CN101689523B (en) * | 2007-07-17 | 2012-02-22 | 住友电气工业株式会社 | Method for manufacturing electronic device, method for manufacturing epitaxial substrate, iii nitride semiconductor element and gallium nitride epitaxial substrate |
| CN101109724B (en) * | 2007-08-16 | 2010-05-19 | 中国科学院上海技术物理研究所 | Method for detecting quantum dot density inside multiple quantum well light emitting diode |
| CN102330072A (en) * | 2010-07-12 | 2012-01-25 | 三星Led株式会社 | Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same |
| CN102330072B (en) * | 2010-07-12 | 2014-05-07 | 三星电子株式会社 | Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same |
| US8895356B2 (en) | 2010-07-12 | 2014-11-25 | Samsung Electronics Co., Ltd. | Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same |
| US9171994B2 (en) | 2010-07-12 | 2015-10-27 | Samsung Electronics Co., Ltd. | Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the same |
| CN115377259A (en) * | 2022-10-26 | 2022-11-22 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
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| CF01 | Termination of patent right due to non-payment of annual fee |