CN2596556Y - GaN base multiple quantum trap blue light-emitting diode - Google Patents
GaN base multiple quantum trap blue light-emitting diode Download PDFInfo
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- CN2596556Y CN2596556Y CN02289265U CN02289265U CN2596556Y CN 2596556 Y CN2596556 Y CN 2596556Y CN 02289265 U CN02289265 U CN 02289265U CN 02289265 U CN02289265 U CN 02289265U CN 2596556 Y CN2596556 Y CN 2596556Y
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Abstract
The utility model discloses a GaN base multiple quantum trap blue luminous diode. The multiple quantum well structure of the luminous diode comprises p type doping AlGaN layers, n type doping AlGaN layers, n quantum wells (n stands for quantity), undoped GaN isolation layers and undoped GaN isolation layers, wherein the n quantum wells is arranged among the AlGaN layers and are composed of p type doping GaN layers and undoped InGaN layers, the undoped GaN isolation layers are arranged between the p type doping AlGaN layers and the n quantum wells, and the undoped GaN isolation layers are arranged between the n type doping AlGaN layers and the n quantum wells. By reasonably adjusting the thickness of the GaN isolation layers, the positions of p-n junctures can be effectively adjusted, and the junctures can be positioned in the area of the multiple quantum well to effectively enhance the luminous intensity of the luminous diode.
Description
Technical field
The utility model relates to a kind of light-emitting diode, relates in particular to a kind of GaN based multiple quantum well blue light-emitting diode.
Background technology
The semiconductor light-emitting-diode light source life is long, low in energy consumption, good reliability, has obtained general approval in the many fields that produce and live, and is of many uses.Over past ten years, made significant headway on basic research and business development with the short-wave long light-emitting diode that the basic blue light diode of GaN is representative, make human high duplication, the long-life panchromatic white light source that comprises of obtaining, known GaN based diode structure can be with reference to United States Patent (USP) 4918497,4966862,5027168 and 5338944.
Multi-quantum pit structure in the GaN based light-emitting diode of present widespread usage in the world as shown in Figure 1, InGaN/GaN Multiple Quantum Well 122 among the figure, form by GaN potential barrier 123 and InGaN potential well 124 multilayers overlapping, be formed with the AlGaN layer 121 that the p type mixes on it, it is formed with the AlGaN layer 120 that the n type mixes down.
Said structure is mixed Si on the GaN potential barrier 123 when growing InGaN/GaN Multiple Quantum Well 122, can improve the crystal mass of GaN like this, impels the In in the quantum well to be condensed into In group simultaneously, and led lighting is strengthened.But also there is significant disadvantages in this structure: because potential barrier is mixed Si and introduced n type impurity in quantum well, make p-n junction depart from the InGaN/GaN multiquantum well region, when light-emitting diode works in forward bias, the minority carrier of quantum well region is the hole, the hole is luminous with electron recombination in diffusion process, but because the mobility in hole is very low, diffusion length is very little, and the also corresponding minimizing with the hole number of electronics of radiation recombination takes place; On the contrary, minority carrier in the GaN layer that the p type mixes is an electronics, its diffusion length is very long, this just makes the recombination region major part be arranged in the GaN layer that the p type mixes, increase along with the charge carrier injection, Auger process becomes main complex form, thereby has greatly reduced the efficient of radiation recombination, and having limited with the InGaN/GaN Multiple Quantum Well is the further raising of the LED luminous intensity of active area.
The utility model content
The technical problems to be solved in the utility model provides a kind of light-emitting diode of the GaN of comprising based multiquantum-well structure, makes electronics and hole mainly luminous by radiation recombination in quantum well, with the luminous efficiency of further raising light-emitting diode.
In order to achieve the above object, the utility model provides a kind of light-emitting diode with multi-quantum pit structure, comprises multi-quantum pit structure; GaN layer, transparency electrode and p type ohmic contact that p type on described multi-quantum pit structure mixes; GaN layer, GaN resilient coating, n type ohmic contact and substrate that n type under described multi-quantum pit structure mixes; It is characterized in that: this multi-quantum pit structure comprises N quantum well, this quantum well comprises barrier layer and the plain potential well layer that the p type mixes, the thickness of this potential barrier layer is greater than 1nm and less than the arbitrary value between the 500nm, the thickness of this potential well layer is greater than 1nm and less than the arbitrary value between the 100nm, and the band gap of this potential well layer is less than this barrier layer.
In the such scheme, be characterized in that this multi-quantum pit structure also comprises: the AlGaN layer that the p type on this N quantum well mixes, its thickness is greater than 0nm and less than the arbitrary value between the 500nm; And the AlGaN layer of the doping of the n type under this N quantum well, its thickness is greater than 0nm and less than the arbitrary value between the 500nm.
In the such scheme, be characterized in that this multi-quantum pit structure also comprises: the GaN separator between AlGaN layer that this p type mixes and this N quantum well; And the GaN separator between AlGaN layer that this n type mixes and this N quantum well, the thickness of these two GaN separators is greater than 0nm and less than the arbitrary value between the 500nm.
The utility model GaN based LED of multiple quantum wells structure is compared with the GaN based light-emitting diode structure of routine, tangible advantage is arranged: quantum well region p type mixes, can adjust the position of p-n junction effectively, make it to be positioned at the Multiple Quantum Well zone, thickness to the plain GaN separator of quantum well region both sides growths is adjusted, and also can adjust the position of p-n junction effectively; When the light-emitting diode operate as normal, the minority carrier of multiquantum well region is an electronics, and the mobility of electronics is higher, diffusion length is big, can radiation recombination take place in whole quantum well region and hole, increase efficient greatly, effectively strengthened the luminous intensity of light-emitting diode.
In addition, because the utility model GaN based light-emitting diode structure does not have specific (special) requirements to growth apparatus and process conditions during fabrication, this structure can not make subsequently growth and processing step complicated.
Description of drawings
Fig. 1 is the profile of known luminescence diode;
Fig. 2 is the profile of the utility model embodiment light-emitting diode;
Fig. 3 is the light fluorogram of the utility model embodiment light-emitting diode;
Fig. 4 is the current-voltage characteristic figure of the utility model embodiment light-emitting diode;
Fig. 5 is the luminosity of the utility model embodiment light-emitting diode and the relation of electric current.
Embodiment
The GaN based multiple quantum well blue light-emitting diode 25 of the utility model specific embodiment, as shown in Figure 2.Wherein multi-quantum pit structure comprises: the AlGaN layer 21 that the p type mixes; The AlGaN layer 20 that the n type mixes; N quantum well 22 between the AlGaN20 layer of AlGaN layer 21 that this p type mixes and the doping of this n type, the quantum well structure in this N quantum well comprises barrier layer 23 and potential well layer 24, the band gap of potential well layer 24 is less than barrier layer 23; Also generation has GaN separator 14-2 between AlGaN layer 21 that this p type mixes and this N quantum well 22; Also generation has GaN separator 14-1 between AlGaN layer 20 that this n type mixes and this N quantum well 22.
Above-mentioned GaN based multiquantum-well structure, the N in this N quantum well 22 can be arbitrary integer of 1 to 100.
Barrier layer 23 is binary, ternary, quaternary compound or the mixture of being made up of Ga, In, Al, N, comprises GaN, In
xGa
1-xN, Al
yGa
1-yN, In
aGa
bAl
1-a-bN, wherein 0＜x＜1; 0＜y＜=1; 0＜a＜1,0＜b＜1, and a+b＜=1 are preferably the GaN that the P type mixes.When selecting the molar content of Al and In, satisfy the band gap width of the band gap width of this layer greater than potential well layer.Its thickness can be greater than 1nm and less than the arbitrary value between the 500nm, and preferred value is 250nm.
Potential well layer 24 is binary, ternary, quaternary compound or the mixture of being made up of Ga, In, Al, N, comprises GaN, In
xGa
1-xN, Al
yGa
1-yN, In
aGa
bAl
1-a-bN, wherein 0＜x＜=1; 0＜y＜1; 0＜a＜1,0＜b＜1, and a+b＜=1 are preferably plain InGaN.When selecting the molar content of Al and In, satisfy the band gap width of the band gap width of this layer less than barrier layer.Its thickness is greater than 1nm and less than the arbitrary value between the 100nm, and preferred value is 50nm.
The AlGaN layer 20 that AlGaN layer 21 that the p type mixes and n type mix can be Al
xGa
1-xN, 0＜x＜=1 wherein, its thickness is greater than 0nm and less than the arbitrary value between the 500nm;
The AlGaN layer 20 that AlGaN layer 21 that the p type mixes and n type mix also can be for by Al
xGa
1-xThe superlattice structure that N and GaN form, 0＜x＜=1 wherein, Al wherein
xGa
1-xN barrier layer, thickness be＞0nm and＜arbitrary value between the 100nm, GaN potential well layer wherein, thickness are greater than 0nm and less than the arbitrary value between the 100nm, its periodicity is more than or equal to 1 and smaller or equal to 50 integer.
The dopant that above-mentioned p type mixes is an II family element, comprises Mg, Zn, and doping content is 1 * 10
16Cm
-3To 5 * 10
19Cm
-3The dopant that the n type mixes is an IV family element, comprises Si, and doping content is 1 * 10
16Cm
-3To 1 * 10
20Cm
-3
The thickness of GaN separator 14-1 and 14-2 is greater than 0nm and less than the arbitrary value between the 500nm, and preferred value is 200nm.
In the light-emitting diode 25 of this implementation, except the top multi-quantum pit structure of having introduced, also comprise: GaN layer 15, transparency electrode 16, p type ohmic contact 17 that the p type on described multi-quantum pit structure mixes; And at GaN layer 13 that the n type under the described multi-quantum pit structure mixes, GaN resilient coating 12, GaN resilient coating 11 that the n type mixes, be located at the n type ohmic contact 18 on the GaN layer 13 that the n type mixes, the above structure growth is on Sapphire Substrate 10.
The thickness of the GaN layer 15 that the p type mixes is more than or equal to 10nm and less than the arbitrary value between the 2000nm, and its dopant is an II family element, comprises Mg, Zn, and its doping content is 1 * 10
16Cm
-3To 5 * 10
19Cm
-3
The thickness of the GaN layer 13 that the n type mixes is more than or equal to 100nm with less than the arbitrary value between the 9000nm, and its dopant is an IV family element, comprises Si, and its doping content is 1 * 10
16Cm
-3To 1 * 10
20Cm
-3Between.
As shown in Figure 5, adopt the luminous intensity of the blue light diode of the utility model structure to reach 6mW, its forward voltage is 3.5V, as shown in Figure 4.
Claims (11)
1, a kind of light-emitting diode with multi-quantum pit structure comprises
Multi-quantum pit structure;
GaN layer, transparency electrode and p type ohmic contact that p type on described multi-quantum pit structure mixes;
GaN layer, GaN resilient coating, n type ohmic contact and substrate that n type under described multi-quantum pit structure mixes;
It is characterized in that:
This multi-quantum pit structure comprises N quantum well, this quantum well comprises barrier layer and the plain potential well layer that the p type mixes, the thickness of this barrier layer is greater than 1nm and less than the arbitrary value between the 500nm, the thickness of this potential well layer is greater than 1nm and less than the arbitrary value between the 100nm, and the band gap of this potential well layer is less than this barrier layer.
2, the light-emitting diode with multi-quantum pit structure as claimed in claim 1 is characterized in that this multi-quantum pit structure also comprises: the AlGaN layer that the p type on this N quantum well mixes, and its thickness is greater than 0nm and less than the arbitrary value between the 500nm; And the AlGaN layer of the doping of the n type under this N quantum well, its thickness is greater than 0nm and less than the arbitrary value between the 500nm.
3, the light-emitting diode with multi-quantum pit structure as claimed in claim 2 is characterized in that this multi-quantum pit structure also comprises: the GaN separator between AlGaN layer that this p type mixes and this N quantum well; And the GaN separator between AlGaN layer that this n type mixes and this N quantum well, the thickness of these two GaN separators is greater than 0nm and less than the arbitrary value between the 500nm.
4,, it is characterized in that N in this N quantum well is for more than or equal to 1 and smaller or equal to 100 integer as claim 1,2 or 3 described light-emitting diodes with multi-quantum pit structure.
5,, it is characterized in that binary, ternary, quaternary compound or the mixture of this barrier layer for forming by Ga, In, Al, N as claim 1,2 or 3 described light-emitting diodes with multi-quantum pit structure; This potential well layer is binary, ternary, quaternary compound or the mixture of being made up of Ga, In, Al, N.
6,, it is characterized in that the GaN that this barrier layer mixes for the p type as claim 1,2 or 3 described light-emitting diodes with multi-quantum pit structure; This potential well layer is plain InGaN.
7,, it is characterized in that the AlGaN layer of this p type doping and the AlGaN layer that the n type mixes are Al as claim 2 or 3 described light-emitting diodes with multi-quantum pit structure
xGa
1-xN, or by Al
xGa
1-xThe superlattice structure that N and GaN form, wherein 0＜x＜=1.
8, the light-emitting diode with multi-quantum pit structure as claimed in claim 7 is characterized in that described Al
xGa
1-xIn the superlattice that N and GaN form, this Al
xGa
1-xThe thickness of N barrier layer is greater than 0nm and less than the arbitrary value between the 100nm, and the thickness of this GaN potential well layer is greater than 0nm and less than the arbitrary value between the 100nm, and the periodicity of these superlattice is more than or equal to 1 and smaller or equal to 50 integer.
9, as claim 1,2 or 3 described light-emitting diodes with multi-quantum pit structure, it is characterized in that the dopant that described p type mixes is an II family element, doping content is 1 * 10
16Cm
-3To 5 * 10
19Cm
-3The dopant that described n type mixes is an IV family element, and doping content is 1 * 10
16Cm
-3To 1 * 10
20Cm
-3
10, as claim 1,2 or 3 described light-emitting diodes with multi-quantum pit structure, the thickness that it is characterized in that the GaN layer that this p type mixes is more than or equal to 10nm and less than the arbitrary value between the 2000nm, its dopant is an II family element, and doping content is 1 * 10
16Cm
-3To 5 * 10
19Cm
-3Between; The thickness of the GaN layer that this n type mixes is more than or equal to 100nm with less than the arbitrary value between the 9000nm, and its dopant is an IV family element, and doping content is 1 * 10
16Cm
-3To 1 * 10
20Cm
-3Between.
11, as claim 1,2 or 3 described light-emitting diodes with multi-quantum pit structure, it is characterized in that also being formed with the GaN resilient coating that the n type mixes between the GaN layer that this GaN resilient coating and this n type mix, this n type ohmic contact is formed on the GaN layer that this n type mixes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02289265U CN2596556Y (en) | 2002-09-30 | 2002-11-22 | GaN base multiple quantum trap blue light-emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02256880.8 | 2002-09-30 | ||
| CN02256880 | 2002-09-30 | ||
| CN02289265U CN2596556Y (en) | 2002-09-30 | 2002-11-22 | GaN base multiple quantum trap blue light-emitting diode |
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|---|---|
| CN2596556Y true CN2596556Y (en) | 2003-12-31 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007076730A1 (en) * | 2006-01-06 | 2007-07-12 | Dalian Luming Science & Technology Group Co., Ltd. | GaN-BASED OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURE THE SAME |
| CN1945865B (en) * | 2005-10-07 | 2010-05-12 | 三星电机株式会社 | Nitride-based semiconductor light emitting diode and method of manufacturing the same |
| CN103236480A (en) * | 2013-04-28 | 2013-08-07 | 华灿光电股份有限公司 | LED (light emitting diode) epitaxial wafer and manufacture method thereof |
| CN109075530A (en) * | 2016-05-13 | 2018-12-21 | 松下知识产权经营株式会社 | Nitride-based light-emitting component |
-
2002
- 2002-11-22 CN CN02289265U patent/CN2596556Y/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945865B (en) * | 2005-10-07 | 2010-05-12 | 三星电机株式会社 | Nitride-based semiconductor light emitting diode and method of manufacturing the same |
| US7977134B2 (en) | 2005-10-07 | 2011-07-12 | Samsung Led Co., Ltd. | Nitride-based semiconductor light emitting diode and method of manufacturing the same |
| WO2007076730A1 (en) * | 2006-01-06 | 2007-07-12 | Dalian Luming Science & Technology Group Co., Ltd. | GaN-BASED OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURE THE SAME |
| CN103236480A (en) * | 2013-04-28 | 2013-08-07 | 华灿光电股份有限公司 | LED (light emitting diode) epitaxial wafer and manufacture method thereof |
| CN103236480B (en) * | 2013-04-28 | 2016-01-20 | 华灿光电股份有限公司 | A kind of epitaxial wafer of light-emitting diode and manufacture method thereof |
| CN109075530A (en) * | 2016-05-13 | 2018-12-21 | 松下知识产权经营株式会社 | Nitride-based light-emitting component |
| CN109075530B (en) * | 2016-05-13 | 2021-01-12 | 松下半导体解决方案株式会社 | Nitride-based light emitting device |
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| GR01 | Patent grant | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |