CN101047364A - Piezodectric vibration device - Google Patents
Piezodectric vibration device Download PDFInfo
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- CN101047364A CN101047364A CN 200610071575 CN200610071575A CN101047364A CN 101047364 A CN101047364 A CN 101047364A CN 200610071575 CN200610071575 CN 200610071575 CN 200610071575 A CN200610071575 A CN 200610071575A CN 101047364 A CN101047364 A CN 101047364A
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- 239000002184 metal Substances 0.000 claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229920002635 polyurethane Polymers 0.000 claims abstract description 11
- 239000004814 polyurethane Substances 0.000 claims abstract description 11
- 239000000853 adhesive Substances 0.000 claims description 43
- 230000001070 adhesive effect Effects 0.000 claims description 43
- 230000008878 coupling Effects 0.000 claims description 17
- 238000010168 coupling process Methods 0.000 claims description 17
- 238000005859 coupling reaction Methods 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000004806 packaging method and process Methods 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 23
- 238000003466 welding Methods 0.000 description 23
- 230000004807 localization Effects 0.000 description 13
- 239000010453 quartz Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 241000196324 Embryophyta Species 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 241000587161 Gomphocarpus Species 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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Abstract
A piezoelectric vibration component consists of metal base with metal lead wire terminal, a pair of flat metal supports, piezoelectric vibration plate of excitation electrode, metal cover, lead wire connection unit, element loading unit. It is featured as utilizing conductive binder of silicon series or polyurethane series to electric-connect said element loading unit with said piezoelectric vibration plate.
Description
Technical field
The present invention relates to the maintenance structure of the Piezodectric vibration device of quartz crystal unit etc., particularly improvement keeps the structure of the support of piezoelectric vibrating plate in Piezodectric vibration device.
Can enumerate quartz crystal unit, crystal filter, crystal oscillator etc. as Piezodectric vibration device, for example because of quartz crystal unit resonance characteristics excellence, so be used widely as a reference source of frequency, time.These Piezodectric vibration devices form metal film electrode on the surface of crystal oscillating plate (piezoelectric vibrating plate), for isolated with extraneous air, protect this metal film electrode, use the packaging body that is made of metal base and crown cap to carry out gas-tight seal.
Background technology
In the past, as the spy open the 2001-308669 communique (below, be called patent documentation 1) disclosed such, on metal base, utilize the insulating material of glass etc. to plant the pair of metal lead terminal, on the inner lead part (being positioned at the part of package interior) of this metal lead wire terminal, the bracket component of pair of metal flat board is installed relatively.The crystal oscillating plate for example is the AT-cut crystal oscillating plate that is made of the thickness sliding vibration, the extraction electrode that forms exciting electrode on its positive and negative, draw from each exciting electrode.On above-mentioned support, load in the crystal oscillating plate, with electrically conducting adhesive the crystal vibrating reed is reached mechanically electrically with timbering material and be connected.Then, on above-mentioned metal base, cover metal lid, become they structures with the mutual gas-tight seal of gimmick of resistance welded etc.
In this patent documentation 1, propose a kind of supporting structure, can also be used for by on the metal base of band lead terminal, covering metal lid to the use of carrying out gas-tight seal the quartz crystal unit of the minicrystal oscillating plate airtight terminal type of popularizing to the surface installing type quartz crystal unit of ceramic vessel.
, in patent documentation 1, timbering material relative in packaging body extends to direction near each other (towards inside) in the inner lead part from the metal lead wire terminal.Like this in patent documentation 1, under the situation that keeps little crystal oscillating plate than the interval of lead terminal, because from the inner lead of metal lead wire terminal part towards the direction mounting bracket towards inside near each other, so compare with situation from the inner lead part direction outwardly disconnected from each other mounting bracket of metal lead wire terminal, cushioning effect is restricted, and resistance to impact can descend.In addition, the conductive adhesive of bonding crystal oscillating plate flows out towards inside from this support if electrically reach mechanically, then also has the reduction of the adhesive strength that causes because of the conductive adhesive deficiency, reaches the metal part risk of short-circuits with pedestal.
The present invention proposes in order to address the above problem, its purpose is to provide a kind of structure that can be suitable for small-sized quartz crystal unit that not only forms, and can improve impact resistance, and the outflow of elimination conductive adhesive, the Piezodectric vibration device that reliability is higher.
Thereby, Piezodectric vibration device of the present invention, constitute packaging body by being used for metal base and metal lid that gas-tight seal is formed with the piezoelectric vibrating plate of exciting electrode, in above-mentioned metal base, plant at least 2 strip metal lead terminals with the insulating material perforation, be provided with the plate shaped metallic support that welds with the inboard of above-mentioned metal lead wire terminal in the inside of above-mentioned packaging body, in the plate face of the positive and negative of above-mentioned piezoelectric vibrating plate and above-mentioned metallic support mode along identical direction, above-mentioned piezoelectric vibrating plate is loaded in the inside of above-mentioned packaging body, and, above-mentioned piezoelectric vibrating plate is electrically connected with above-mentioned metallic support with conductive adhesive, it is characterized in that: above-mentioned metallic support is propped up by pair of metal and is configured to, on the pair of metal support, has the lead-in wire coupling part that engages with above-mentioned lead terminal respectively, with from this lead-in wire coupling part to the element loading station that extends near the direction (towards the inboard) of relative above-mentioned metallic support, conductive adhesive with silicon system or polyurethane series is electrically connected this element loading station with above-mentioned voltage fluctuation plate, thus above-mentioned piezoelectric vibrating plate is installed on the said elements loading station.
If employing the present invention, then undertaken in the Piezodectric vibration device of airtight terminal type of gas-tight seal by on the metal base of the high band metal lead wire terminal of the reliability of gas-tight seal, covering metal lid, because can also in the Piezodectric vibration device of airtight terminal type, be suitable for the small-sized piezoelectric vibrating plate of popularizing to surface-mounting type piezoelectric vibrator spare, reduce so can go far towards cost.In addition, even towards inside metallic support is installed from the interval of metal lead wire terminal, cause that by metallic support cushioning effect is restricted, because utilize the high silicon system of flexibility, perhaps the conductive adhesive of polyurethane series is installed in piezoelectric vibrating plate on the element loading station of metallic support, so can improve resistance to impact.
In addition, in above-mentioned structure, on the surface of said elements loading station, also can implement silver-plated, gold-plated, perhaps a kind of in the nickel plating or more than one.Perhaps, in above-mentioned structure, on the surface of said elements loading station, also can implement asperities processing.
In this case, except above-mentioned action effect, can improve since with the joint of metallic support in use the silicon system that is rich in flexibility, the perhaps conductive adhesive of polyurethane series and problem that the cementability that produces reduces.Promptly, silver-plated, gold-plated by implementing on the surface of the element loading station of metallic support, or in the nickel plating one or more, perhaps implement asperities processing, improve the element loading station and the silicon system of metallic support, the perhaps joint interface of the conductive adhesive of polyurethane series, piezoelectric vibrating plate and metallic support by conductive adhesive form electrically and mechanical bond strength improve, bring the conducting stability of Piezodectric vibration device and the raising of resistance to impact.
In addition, in above-mentioned formation, on the said elements loading station, also can form sweep.Perhaps, in above-mentioned formation, on the said elements loading station, also can form from this element loading station to the wide cut part of extending with the direction that relative above-mentioned metallic support separates.
In this case, except above-mentioned action effect, can improve since with the joint of metallic support in use the silicon system that is rich in flexibility, the perhaps problem that descends of the cementability that causes of the conductive adhesive of polyurethane series.Promptly, because conductive adhesive rests on the sweep of element loading station, perhaps on the wide cut of the element loading station part, so piezoelectric vibrating plate and metallic support are improved by the mechanical bond strength that electrically reaches that conductive adhesive produces, bring the conducting stability of Piezodectric vibration device and the raising of resistance to impact.In addition, even conductive adhesive flows out, because can be by the sweep of element loading station, perhaps the wide cut of element loading station be partly blocked, thus also not can with the metal partial short circuit of metal base.
In addition, in above-mentioned formation, on the said elements loading station, also can form a kind of in hole, ditch, the slit or more than one.
In this case, except above-mentioned action effect, can improve the problem that the cementability that produces when perhaps the conductive adhesive of polyurethane series is used for joint with metallic support descends the silicon system that is rich in flexibility.Promptly, because conductive adhesive rests on the through hole of element loading station, the hole that the end is arranged, ditch, perhaps in the slit, by the through hole of element loading station, the hole that the end is arranged, ditch, perhaps slit improves the element loading station and the silicon system of metallic support, the perhaps joint interface of the conductive adhesive of polyurethane series, so piezoelectric vibrating plate and metallic support improve by the mechanical bond strength that electrically reaches that conductive adhesive produces, bring the conducting stability of Piezodectric vibration device and the raising of resistance to impact.In addition because can eliminate the outflow of conductive adhesive, so also not can with the metal partial short circuit of metal base.
Description of drawings
Fig. 1 is the exploded perspective view of expression embodiments of the present invention 1.
Fig. 2 is the internal cross section figure that has assembled the state of Fig. 1.
Fig. 3 is the stereogram that is illustrated in another form of the metallic support in the embodiments of the present invention 1.
Fig. 4 is the stereogram of the metallic support of expression embodiments of the present invention 2.
Fig. 5 is the stereogram of the metallic support of expression embodiments of the present invention 3.
Fig. 6 is the stereogram of the metallic support of expression embodiments of the present invention 4.
Fig. 7 is the plane graph and the side view of the metallic support of expression embodiments of the present invention 5.
Fig. 8 is plane graph and the side view that the metallic support of expression embodiments of the present invention 5 is installed in the pedestal of the state on the metal lead wire terminal.
Embodiment
Below, be example with the quartz crystal unit, adopt embodiments of the present invention with reference to description of drawings.Fig. 1 is the exploded perspective view of expression embodiments of the present invention 1.Fig. 2 is the internal cross section figure of the state of assembly drawing 1, and Fig. 3 is the stereogram of the deformation of timbering example of expression execution mode 1.
In the quartz crystal unit of this form, the metal base 1 (below, be also referred to as pedestal) and the metal lid 3 that are used for gas-tight seal piezoelectric vibrating plate 2 constitute packaging bodies.
Metal lead wire terminal the 11, the 12nd, elongated cylindrical shape, in the inside of packaging body, fore-end 11a, the 12a of the inboard on pedestal top are the wide cut parts, form the nail head shape of upper planar.On this inboard fore- end 11a, 12a, the metallic support 13,14 of explanation later on relatively is installed with the method (laser welding, means of spot welds etc.) of welding.Therefore, when being loaded in metallic support 13,14 on the metal lead wire terminal 11,12, can not tilt stably to carry out level loads, because bonding area also enlarges, so bond strength improves, the tremendous raising of reliability when being welded to metallic support 13,14 on the metal lead wire terminal 11,12.In addition, the inner lead fore-end of metal lead wire terminal 11,12 is because be the nail head shape, so reduce the vibration amplitude of the metallic support 13,14 that caused by impact, the raising that brings resistance to impact.
Metallic support the 13, the 14th, Cu-Ni-Zn is an alloy, the pair of metal flat board of SUS, packfong, Kovar alloy, phosphor bronze, 42 alloys etc. has respectively on pair of metal support 13,14: and the lead-in wire coupling part 131,141 of the wide cut of metal lead wire terminal 11,12 joints; The element loading station in a narrow margin 132,142 that extends to the direction (to the inside) of approaching metallic support 13,14 respect to one another from lead-in wire coupling part 131,141; The localization part in a narrow margin 134,144 that extends to the direction that is separated from each other via rising part 133,143 from lead-in wire coupling part 131,141.On element loading station 132,142, form step portion 1322,1422 (said in the present invention sweep), they are to extend and form to the direction of approaching metallic support 13,14 respect to one another via sloping portion 1321,1421, have implemented the Ag flash plating at least on the surface of element loading station 132,142 (the M part of Fig. 1).Formation and the silicon system of explanation later on or the bond strength raising of urethane adhesive (conductive adhesive S) by this Ag flash plating.Also can not implement this Ag flash plating, and implement gold-plated or nickel plating.And then, though it is not shown, by not carrying out these metal platings, and (for example go up the processing of enforcement asperities on the surface of element loading station 132,142 (the M part of Fig. 1), pit processing etc.), perhaps implement ditch and processing such as hole and slit, the surface area of element loading station 132,142 also can increase, improve with the joint interface of the conductive adhesive S of later explanation, bond strength improves.In this case, can constitute cheaply than metal plating.And, also can make up these metal platings He Gou and hole and groove etc.
Forming on the lead-in wire coupling part 131,141: on the straight line of the central point of the central point of link component loading station 132,142 and localization part 134,144 and the welding region 1311,1411 that engages of metal lead wire terminal 11,12; The semicircular otch 1312,1412 that forms around the part of welding region 1311,1411, the join domain from lead-in wire coupling part 131,141 to localization part 134,144 forms chamfered part 1313,1413 with the form that narrows down gradually.This chamfered part 1313,1413 is not limited to the R face of curvature shape, also can be rectilinear C face.
In this form, at link component loading station 132,142 central point and localization part 134, on the straight line of 144 central point, form and metal lead wire terminal 11,12 welding regions 1311 that engage, 1411 and notch portion 1312,1412, at welding region 1311, on 1411 because disposed adjacent notch portion 1312,1412, so metallic support 13,14 to metal lead wire terminal 11, during 12 welding, with localization part 134,144 position, perhaps notch portion 1312,1412 position, can make welding region 1311 easily, in the time of 1411 aligned in position, because element loading station 132,142 directivity is alignment easily also, so can carry out the higher metallic support of precision 13,14 installation.In addition, because be formed with notch portion 1312,1412 near the welding region 1311,1411 on the straight line of the central point of the central point of link component loading station 132,142 and localization part 134,144, so can further relax from localization part 134,144 to element loading station 132,142, perhaps from of the influence of lead-in wire coupling part 131,141 to the external impact of element loading station 132,142.Particularly because on welding region 1311,1411, semicircular otch 1312,1412 is set in periphery, so the central authorities at otch 1312,1412 exist welding region 1311,1411 this point of metal lead wire terminal 11,12 clear and definite, not only improve resistance to impact, but also have function as the mark of determining welding region 1311,1411.
The long cylinder shape that metal lid 3 is lower aperture has the flange corresponding with the flange 10a of pedestal 1 31 on this opening portion, carry out gas-tight seal by carrying out resistance welded with pedestal 1.
Then, on the element loading station 132,142 of metallic support 13,14, load piezoelectric vibrating plate 2, with electrical mechanically joint element loading station 132,142 and extraction electrode 11a, the 12a of reaching of the conductive adhesive S (conductive bonding material) of silicon system or polyurethane series.And, shown in this form, it is desirable to conductive adhesive S and use more whippy silicon system or urethane adhesive.
After having carried out the necessary processing of annealing etc., cover lid 3 on pedestal 1, though not shown, by the welding electrode body being connected to respectively on the two flange 10a, 31, on both, exerting pressure and switch on and carry out resistance welded, gas-tight seal is finished.
As mentioned above, in the quartz crystal unit of this form, conductive adhesive S with silicon system or polyurethane series on the element loading station 132,142 of metallic support 13,14 is electrically connected piezoelectric vibrator 2, thus piezoelectric vibrating plate 2 is loaded on the element loading station 132,142.In addition, in the plate face of the positive and negative of piezoelectric vibrating plate 2 and metallic support 13,14 mode, piezoelectric vibrating plate 2 is loaded in the inside of packaging body along identical direction.In addition, the piezoelectric vibrating plate 2 usefulness conductive adhesive S that are loaded in package interior are electrically connected with metallic support 13,14.
In this form, conductive adhesive S is stopped, can eliminate the outflow of conductive adhesive S.In addition, step part 1322,1422 flows out the problem of middle body so suppress conductive adhesive S along piezoelectric vibrating plate 2 because form via lifting part 1321,1421, also can not hinder the vibration of piezoelectric vibrating plate 2.
And, form as the step part 1322,1422 of element loading station 132,142, be not limited to Fig. 1, Fig. 2, as shown in Figure 3, also can be arranged to the height of a part of 141a of element loading station 142 (only diagram lead-in wire 14) and lead-in wire coupling part, localization part 144 is arranged to identical, step part 142 is arranged to identical shape with the height of another part 141b of the coupling part that goes between.In this case, conductive adhesive S (conductive bonding material) is stopped, thereby eliminate the outflow of conductive adhesive S, but also can realize the low level of metallic support 14 integral body.In addition, in Fig. 3, for above-mentioned execution mode because semicircular otch 1412 be arranged on element loading station 142 1 sides around, so become the structure of the cushioning effect that improves element loading station 142.
-other execution mode-
Being not limited to the shape of the metallic support 13,14 of above-mentioned execution mode, also can be the structure of Fig. 4~as shown in Figure 8.In addition, in Fig. 4~Fig. 7, only illustrate metallic support 14 (being metallic support 13) in Fig. 7, on representing, omit the part of explanation in the mark duplicate numbers with the part of spline structure.
Fig. 4 is the stereogram of the metallic support of expression embodiments of the present invention 2.In the metallic support 14 of this figure, form the wide cut part 1423,1424 that extends to form to direction from element loading station 142 with approximating direction quadrature.In this form, conductive adhesive S (conductive bonding material) is stopped, can eliminate the outflow of conductive adhesive S.In addition, this wide cut part 1423,1424 because from element loading station 142 to extending and form with the direction (direction of quadrature among Fig. 4) that relative metallic support 13 separates, so, suppress conductive adhesive S and flow out to the problem of middle body, can not hinder the vibration of piezoelectric vibrating plate 2 along piezoelectric vibrating plate 2.In addition, can realize the low level of metallic support 14 integral body.
Fig. 5 is the stereogram of the metallic support of expression embodiments of the present invention 3.In the metallic support 14 of this figure,, on element loading station 142, form a plurality of holes (through hole or the hole at the end is arranged) 1425 as the stop part of conductive adhesive S (conductive bonding material).Fig. 6 is the stereogram of the metallic support of expression embodiments of the present invention 4.The metallic support 14 of this figure forms many ditches 1426 (the stop part of conductive adhesive) on element loading station 142.In this form, conductive adhesive S (conductive bonding material) is stopped, can eliminate the outflow of conductive adhesive S.In addition, piezoelectric vibrating plate 2 and metallic support 14 are improved by the mechanical bond strength that electrically reaches that conductive adhesive S (conductive bonding material) produces, and can realize the low level of metallic support 14 integral body.And, though not shown, also hole and ditch can be set on monomer, also can not form these holes and ditch and form slit.And then, also hole, ditch or slit combination can be formed.
Fig. 7 is the plane graph and the side view of the metallic support of expression embodiments of the present invention 5.In addition, Fig. 8 is plane graph and the side view that the metallic support of expression embodiments of the present invention 5 is installed in the pedestal 1 of the state on the metal lead wire terminal 11,12.And, in this form, in metallic support 13,14, be example explanation, and omit diagram and explanation by the same metallic support that constitutes 14 with metallic support 13.
In this form, on the straight line of the central point of the central point of link component loading station 132 and localization part 134, form and the welding region 1311 and the notch portion 1312 of metal lead wire terminal 11 joints, compare a welding region 1311 and otch 1312 separate configuration with quartz crystal unit shown in Figure 1.Therefore, metallic support 13 during to metal lead wire terminal 11 welding, position with localization part 134, the perhaps position of notch portion 1312, become simultaneously easy in the aligned in position that can make welding region 1311, because the directivity of element loading station 132 is alignment easily also, so can carry out the installation of more high-precision metallic support 13.In addition, because the welding region 1311 from the straight line of the central point of the central point of link component loading station 132 and localization part 134 separately forms notch portion 1312, so not only can further relax to element loading station 132 from localization part 134, perhaps the influence that produces by external impact from lead-in wire coupling part 131 to element loading station 132, and in welding region 1311, when 11 welding of 13 pairs of metal lead wire terminals of metallic support, can suppress near the fusing at the position of the metallic support 13 the notch portion 1312.In addition, because on welding region 1311, semicircular otch 1312 is set in periphery, so, in the central authorities of otch 1312, exist welding region 1311 this point of metal lead wire terminal 11 clear and definite, not only improve resistance to impact, but also have function as the mark of determining welding region 1311.
In addition, the element loading station 132 of the metallic support 13 of this form is positioned at the central authorities of the Width of piezoelectric vibrating plate 2, and width dimensions W1 for piezoelectric vibrating plate 2, it is desirable to the width dimensions W2 of element loading station 132 is arranged on from 50% to 90%, can make the inclination of the metallic support 13 that engages to metal lead wire terminal 11 and deviation etc. be difficult to the piezoelectric vibrating plate of installing 2 is exerted an influence like this.
In addition, in above-mentioned execution mode 1~5, be to implement Ag flash plating M, but be not limited to this, also can implement plating Ag, and then on Ag, implement plating palladium (palladium flash plating) the surface of element loading station 132,142 on the surface of element loading station 132,142.
And, as the example of Piezodectric vibration device of the present invention, example quartz crystal unit, but also can be crystal filter, crystal oscillator etc.In addition, the fore-end of the inboard of lead terminal but also goes for general inner lead shape only the ailhead shape as an example.
In addition, the present invention is not breaking away under its spirit and purport or the principal character and can implement with other various forms.Therefore, above-mentioned execution mode example and only in all respects with, not limited interpretation.Scope of the present invention is represented with the scope of claim, in the specification text, without any constraint.And then, belong to the distortion that waits weight range of claim scope and change all within the scope of the invention.
Claims (6)
1, a kind of Piezodectric vibration device, constitute packaging body by being used for metal base and metal lid that gas-tight seal is formed with the piezoelectric vibrating plate of exciting electrode, in above-mentioned metal base, plant at least 2 strip metal lead terminals with the insulating material perforation, be provided with the plate shaped metallic support that welds with the inboard of above-mentioned metal lead wire terminal in the inside of above-mentioned packaging body, in the plate face of the positive and negative of above-mentioned piezoelectric vibrating plate and above-mentioned metallic support mode along identical direction, above-mentioned piezoelectric vibrating plate is loaded in the inside of above-mentioned packaging body, and, above-mentioned piezoelectric vibrating plate is electrically connected with above-mentioned metallic support by conductive adhesive, it is characterized in that:
Above-mentioned metallic support is propped up by pair of metal and is configured to, and has the lead-in wire coupling part that engages with above-mentioned lead terminal on the pair of metal support respectively, with from this lead-in wire coupling part to the element loading station that extends near the direction of relative above-mentioned metallic support,
Above-mentioned piezoelectric vibrating plate is installed on the said elements loading station in the mode that the conductive adhesive by silicon system or polyurethane series is electrically connected with the said elements loading station.
2, Piezodectric vibration device as claimed in claim 1 is characterized in that: on the surface of said elements loading station, implement silver-plated, gold-plated, perhaps a kind of in the nickel plating or more than one.
3, Piezodectric vibration device as claimed in claim 1 is characterized in that: implemented asperities processing on the surface of said elements loading station.
4, Piezodectric vibration device as claimed in claim 1 is characterized in that: formed sweep on the said elements loading station.
5, Piezodectric vibration device as claimed in claim 1 is characterized in that: formed the wide cut part of extending to the direction of leaving relative above-mentioned metallic support from this element loading station on the said elements loading station.
6, Piezodectric vibration device as claimed in claim 1 is characterized in that: form a kind of in hole, ditch, the slit or more than one on the said elements loading station.
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CN101946404A (en) * | 2008-02-18 | 2011-01-12 | 精工电子有限公司 | Method of manufacturing piezoelectric vibrator, piezoelectric vibrator, oscillator, electronic device, and radio clock |
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CN102867908B (en) * | 2011-07-04 | 2014-12-31 | 精工爱普生株式会社 | Electronic device package, electronic device, and electronic apparatus |
CN104380602B (en) * | 2012-07-06 | 2017-06-09 | 株式会社大真空 | Piezoelectric vibration piece and the Piezodectric vibration device using the piezoelectric vibration piece |
CN104380602A (en) * | 2012-07-06 | 2015-02-25 | 株式会社大真空 | Piezoelectric vibration piece and piezoelectric vibration device using same |
CN103337588B (en) * | 2013-07-08 | 2015-07-08 | 西北工业大学 | Piezoelectric exciter with single-sided lead wire structure, and fabrication method of piezoelectric exciter |
CN103337588A (en) * | 2013-07-08 | 2013-10-02 | 西北工业大学 | Piezoelectric exciter with single-sided lead wire structure, and fabrication method of piezoelectric exciter |
CN105141277A (en) * | 2015-08-14 | 2015-12-09 | 舟山市金秋机械有限公司 | Assembly structure of crystal oscillator housing and base |
CN105141277B (en) * | 2015-08-14 | 2018-03-27 | 舟山市金秋机械有限公司 | A kind of assembling structure of shell of crystal oscillator and pedestal |
CN108964628A (en) * | 2017-05-18 | 2018-12-07 | 三星电机株式会社 | Bulk acoustic wave resonator |
CN111630777A (en) * | 2017-12-27 | 2020-09-04 | Tdk株式会社 | Vibration device |
CN111630777B (en) * | 2017-12-27 | 2023-08-18 | Tdk株式会社 | Vibration device |
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