CN101043138B - Protection circuit for semiconductor element - Google Patents
Protection circuit for semiconductor element Download PDFInfo
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- CN101043138B CN101043138B CN200710007218XA CN200710007218A CN101043138B CN 101043138 B CN101043138 B CN 101043138B CN 200710007218X A CN200710007218X A CN 200710007218XA CN 200710007218 A CN200710007218 A CN 200710007218A CN 101043138 B CN101043138 B CN 101043138B
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Abstract
A high reliability protection circuit of a semiconductor device is provided. The protection circuit of the semiconductor device according to the invention is provided with: a current detection mechanism which detects a current of a low level terminal among a main termianl pair of a semiconductor member, the semiconductor member comprises a pair of main terminals and a control terminal controlling a current passing through the main termianl pair; a voltage detection mechanism which detects a voltage of the control terminal of the semiconductor; and a mechanism which inputs two signals of an output signal of the current detection mechanism and an output signal of the voltage detection mechanism, and outputs an abnormal signal when the output signal of the current detection mechanism and the output signal of the voltage detection mechanism indicate a predetermined abnormal signal.
Description
Technical field
The present invention relates to direct current with exchange the power-converting device that carries out mutual conversion, relate in particular to the resist technology of the switch element that is used in power-converting device.
Background technology
Use in wider field that can switch and can control the big capacity inverter that powerful IGBT uses etc. to railway at the low capacity inverter of using from household electrical appliances etc. (inverter) at a high speed.When IGBT was used in inverter etc., the breakage of the IGBT that the short circuit current in order to prevent because of brachium pontis short circuit and load short circuit produces was generally used short-circuit protection circuit under more situation.The brachium pontis short circuit is meant that a plurality of IGBT that are connected in series connect simultaneously between the power line of anodal (plus) and negative pole (minus), thereby the positive pole of power supply and negative pole are by the phenomenon of short circuit.In addition, the load short circuit is meant the load short circuit that is connected in inverter, thereby the positive pole of Jie's power supply by the IGBT that is connecting and negative pole are by the phenomenon of short circuit.Quilt is damaged if excessive electric current is then flow through in the generation short circuit in IGBT.
The short-circuit protection circuit of inverter, at the observation electric current of IGBT and voltage and their surpass under situation of the value that is predetermined, restriction or cut off electric current prevents the breakage of IGBT.As the detection method of short-circuit condition, have supervision collector electrode (collector) method, by the current sensor that is called current transformer (currenttransformer) indirectly the standby current value method, with resistance and emitter (emitter) be connected in series, the method for voltage observation electric current by producing in this resistance etc.
But, when in the high-tension inverter of railway etc., using these current detecting mechanisms, owing to having error detection because of noise, being that short circuit detects the situation that inverter is stopped for being short-circuited when not taking place mistakenly, therefore in patent documentation 1, disclose supervision collector voltage and grid voltage, prevented the technology of the unusual error detection of inverter.
But,, therefore have the problem points of the following stated owing in patent documentation 1, must observe collector voltage.
In general collector voltage is several times of high voltages to hundred times of grid voltage.For example under the situation of the inverter that railway is used, the grid voltage maximum is also less than 20V, but it is the inverter of 4000V that the maximum of collector voltage is also arranged.Need high-tension diode and resistance in order to observe this voltage, thereby the cost that causes system increases.In addition, the combination diode of low pressure and the method for resistance are arranged also, have the problem of the increase of the maximization that causes circuit and cost but this method increases number of components.In addition, the situation of collector voltage with large-amplitude vibration arranged, then the sampling mechanism of noise this moment by above-mentioned collector voltage enters short-circuit protection circuit, thereby has the problem that causes malfunction.
Patent documentation 1: the spy opens 2005-6464 communique (content of Fig. 1, Fig. 2 and (0024) paragraph～(0042) paragraph).
Summary of the invention
The object of the invention is to provide the protective circuit of the high semiconductor device of a kind of reliability.
The protective circuit of semiconductor device of the present invention possesses: to as the IGBT of power semiconductor and the mechanism that monitors as the electric current of the emitter terminal of the main terminal of IGBT; The mechanism that grid voltage as the control terminal of IGBT is detected; With by from as the testing agency of the emitter current of principal current with control the mechanism of the grid voltage of IGBT as both signal of the testing agency of the grid voltage of control terminal voltage.
The protective circuit of semiconductor device of the present invention, have: current detecting mechanism, its electric current to the low terminal of the right current potential of a pair of main terminal of semiconductor element detects, and above-mentioned semiconductor element has a pair of main terminal and to flowing through the control terminal that this is controlled the electric current of main terminal; Voltage detection mechanism, its voltage to the control terminal of above-mentioned semiconductor element detects; With the output signal of the above-mentioned current detecting of input mechanism and these two kinds of signals of output signal of voltage detection mechanism, the mechanism that exports the signal that the voltage of above-mentioned control terminal is controlled.
The protective circuit of IGBT of the present invention, this IGBT possesses collector terminal, emitter terminal and gate terminal, above-mentioned collector terminal and emitter terminal are main terminal, the control terminal of above-mentioned gate terminal for the principal current that flows through between this collector terminal and the emitter terminal is controlled, the protective circuit of above-mentioned IGBT possesses: the testing agency of flowing through the emitter current of above-mentioned emitter terminal; Grid voltage testing agency; With the output signal of testing agency of this emitter current of input and the output signal of this grid voltage testing agency, the mechanism that the electric current that flows in above-mentioned IGBT is limited or cuts off.
Power-converting device of the present invention comprises: semiconductor element, its have a pair of main terminal to flowing through the control terminal that the right electric current of above-mentioned a pair of main terminal is controlled; Series circuit, its two above-mentioned semiconductor elements that are connected in series, and being connected in series between two above-mentioned semiconductor elements a little become ac terminal, and the two-terminal of the semiconductor element that is connected in series becomes dc terminal; Two drive circuits that are connected with the control terminal of two above-mentioned semiconductor elements respectively, the either party of two above-mentioned drive circuits has: current detecting mechanism, and its electric current to the low terminal of the right current potential of the above-mentioned a pair of main terminal of above-mentioned semiconductor element detects; Voltage detection mechanism, its voltage to the control terminal of above-mentioned semiconductor element detects; With the output signal of the above-mentioned current detecting of input mechanism and these two kinds of signals of output signal of voltage detection mechanism, the mechanism that exports the signal that the voltage of above-mentioned control terminal is controlled.
The invention effect
Can make the power-converting device miniaturization according to the present invention, and improve reliability.
Description of drawings
Fig. 1 is the key diagram of the circuit of embodiment 1.
Action waveforms when Fig. 2 is the regular event of inverter.
Action waveforms when Fig. 3 is the abnormal operation of inverter.
Fig. 4 is the action waveforms of overcurrent detection unit when having carried out error detection.
Fig. 5 is the key diagram of the circuit of embodiment 2.
Fig. 6 is the key diagram of the circuit of embodiment 3.
Fig. 7 is the key diagram of the circuit of embodiment 4.
Fig. 8 is the key diagram of the circuit of embodiment 5.
Fig. 9 is the key diagram of the circuit of embodiment 6.
Figure 10 is the key diagram of the three-phase two-level inversion device of embodiment 7.
Among the figure: the 1-instruction department; 2-gate driving portion; 3-grid voltage test section; The 4-AND circuit; The 5-current detecting part; 6,23～28-IGBT, 7,29～34-diode; 8-current transformer (current transformer); 9-overcurrent detection unit; The 10-reference power supply; The 11-shunt resistance; 12-band sense terminal IGBT; The 13-current sense resistor; The 14-integrator; The 15-dc terminal; The 16-ac terminal; 17～19,20～22-gate drivers; The 35-inductance.
Embodiment
Below, use accompanying drawing to describe the present invention in detail.
(embodiment 1)
Fig. 1 is the key diagram of the circuit of present embodiment, and Fig. 2～Fig. 4 is the action waveforms of this circuit.In addition, the waveform of the each several part when Fig. 2 is illustrated in the inverter regular event, and the action of explanation short-circuit protection circuit when being failure to actuate.
Use the action of Fig. 2 key diagram 1.The situation of considering the IGBT6 shutoff is as initial condition.Becoming low level (below be called the L level) before the moment t1 from the signal of instruction department 1 among Fig. 2, correspondence also become the L level from the output of gate driving portion 2, thereby the grid voltage of IGBT6 becomes the L level therewith.If be high level (below be called the H level) in moment t1 instruction, then the output of gate driving portion 2 will be reversed to the H level.At this moment, owing to have input capacitance at the grid of IGBT6, so the output of gate driving portion 2 can not become the H level at once, and some time voltages increase gradually late.Reach the threshold voltage of IGBT6 at moment t2 grid voltage, and collector current begins to flow out.Collector current increases gradually during moment t2～t3, and begins to reduce at moment t3 collector voltage, and to moment t4, IGBT6 is in on-state fully.In Fig. 2,, therefore do not carry out abnormality detection, thereby the output of AND circuit 4 also still remains L, and protective circuit is not moved based on grid detection signal, over-current detection signal because overcurrent does not flow through.
Next, the state of the inverter abnormal operation that flows through for overcurrent describes.Fig. 3 is illustrated in the waveform of the each several part under the abnormal operation state that inverter flows through overcurrent.Among Fig. 3 from t1 constantly input instruction to collector current is identical with Fig. 2 before beginning to flow out constantly at t2.If at moment t2, IGBT6 begins to connect, and then supply voltage is applied to IGBT6, so electric current sharply increases.At this moment, collector voltage is because of temporary transient minimizing of voltage Ve=Le * di/dt of the stray inductance Le that is created in wiring by this rapid current changing rate di/dt, but collector voltage keeps having applied high-tension state.So grid voltage is increased to till the voltage of grid power supply as shown in Figure 3 quickly.In addition, when the reference regular event, be represented by dotted lines before the grid voltage waveform among Fig. 3.Detect this voltage in the grid voltage test section 3, and the grid detection signal is reversed to the H level.Current detection signal is the L level under this state, so the output of AND circuit 4 still remains the L level, thereby overcurrent sensing circuit does not move.If surpass predefined current level at moment t4 collector current, then current detection signal counter-rotating, and the output of AND circuit 4 becomes the H level, thus detect short circuit.If the output of AND circuit 4 becomes the H level, the short-circuit protection circuit that then is built in gate driving portion 2 moves, and the electric current of IGBT6 is limited or cuts off.
At last, use Fig. 4 for inverter just at regular event, but the situation that current detection signal reverses mistakenly describes.Fig. 4 and Fig. 2 similarly represent the waveform of normal inverter action, but are illustrated in the situation that moment t3 current detection signal is reversed to the H level.In the present embodiment, even current detection signal is reversed to the H level as shown in Figure 4, the grid detection signal still remains the L level, so the output of AND circuit 4 still remains the L level, thereby can prevent error detection.
Unusual mechanism be will detect in the present embodiment and grid and emitter will be arranged on.Grid and emitter are only applied voltage about tens volts～tens of volts.Therefore, need not to carry out based on the withstand voltage diode of height and the dividing potential drop of a plurality of resistance, thereby can make the testing circuit miniaturization.In addition, the collector voltage of IGBT vibrates consumingly with bigger voltage change ratio dv/dt sometimes, thereby there is the situation that enters noise from collector electrode, but in the present embodiment because testing circuit is connected in less grid of voltage amplitude and emitter, therefore noise is difficult for sneaking into, thereby is difficult for causing malfunction.
(embodiment 2)
The key diagram of the circuit of expression present embodiment among Fig. 5.Inscape identical with Fig. 1～Fig. 4 in Fig. 5 is used same-sign.Symbol 8 is current transformers (current transformer), the 9th in Fig. 5, overcurrent detection unit, the 10th, reference power supply.
Constitute current detecting part by current transformer 8 and overcurrent detection unit 9 (comparator among Fig. 5) in the present embodiment.The magnetic field that current transformer 8 output is taken place during by the energising of electric current and the voltage that produces, and this output voltage is input to a terminal of overcurrent detection unit 9.The output voltage of current transformer 8 then is judged to be overcurrent than the voltage height of reference power supply 10 if overcurrent flows through, thus the output of overcurrent detection unit 9 counter-rotating.Thus, when grid voltage test section 3 was output as the H level detecting overcurrent, protective circuit was moved.By changing the voltage of reference power supply 10, can at random set the decision content of overcurrent in the present embodiment.
According to present embodiment, by electric current being taken into,, the emitter current of IGBT6 has or not overcurrent thereby being judged with being affected by current transformer 8.
(embodiment 3)
Fig. 6 represents the key diagram of the circuit of present embodiment.Inscape identical with Fig. 1～Fig. 5 in Fig. 6 is used identical symbol.Symbol 11 is shunting (shunt) resistance among Fig. 6.
Mechanism as detection of excessive current has used shunt resistance 11 in the present embodiment.If detect electric current with shunt resistance 11, then voltage and current value produce pro rata, and therefore having can be with the advantage of very high accuracy detection electric current.Thereby the judgement precision of overcurrent improves, and can make highly reliableization of short-circuit protection circuit, high precision int.
(embodiment 4)
Fig. 7 represents the key diagram of the circuit of present embodiment.Inscape identical with Fig. 1～Fig. 6 in Fig. 7 is used identical symbol.Symbol 12 is IGBT, the 13rd of band sense terminal among Fig. 7, current sense resistor.
Use the IGBT12 of band sense terminal to detect electric current in the present embodiment.The IGBT12 of band sense terminal is designed to make the electric current about more than one percent of main emitter current～several one thousandths to flow through sense terminal.By this sense terminal is connected with current sense resistor 13, can correctly detect electric current.In the present embodiment, because it is very little to flow through the electric current of current sense resistor 13, so the heating of current sense resistor is little, thereby reduces the loss of circuit, and can use small-sized parts.
(embodiment 5)
Fig. 8 represents the key diagram of the circuit of present embodiment.Inscape identical with Fig. 1～Fig. 7 in Fig. 8 is used identical symbol.Symbol 35 is the inductance, the 14th that are present in the wiring of main circuit among Fig. 8, integrator.
In the present embodiment, use the electric current that on the stray inductance of the wiring that is present in main circuit, is produced, come detection of excessive current.The stray inductance of the wiring of main circuit is meant the inductance of the wiring that connects IGBT6 and power supply and at the inductance of the wiring of the encapsulation inside of IGBT6 etc.At these inductance L e by as the time rate of change di/dt of the emitter current of principal current and produce voltage Ve=Le * di/dt.If come this voltage Ve is carried out integration with integrator, then can obtain flowing through the electric current I e of emitter.If this emitter current Ie is bigger than the voltage of reference power supply 10, then the output of overcurrent detection unit is judged, and sends detection signal to AND circuit 4.Detection of excessive current thus.
According to present embodiment, in order to detect electric current by the stray inductance of using primary circuit route, need not to increase the element that current detecting is used newly at primary circuit route, thereby following advantage is arranged, promptly can not produce the increase of the loss in the current measuring element that primary circuit route also is subjected to or the problems such as increase of cost.
(embodiment 6)
The key diagram of the circuit of expression present embodiment among Fig. 9.Inscape identical with Fig. 1～Fig. 8 in Fig. 9 is used identical symbol.In the present embodiment, be provided with two overcurrent test sections as shown in Figure 9.If adopt this structure, if owing to utilize the overcurrent testing result of different mensuration mechanisms not detect all electric currents, then be judged to be overcurrent, therefore have and can prevent the advantage that error detection is so reliably.In addition, show the example that uses two current detecting mechanisms in the present embodiment, if but using three above current detecting mechanisms, then can detect more reliably having or not of overcurrent.
(embodiment 7)
The key diagram of the three-phase two-level inversion device of expression present embodiment among Figure 10.Symbol 15 is dc terminals, the 16th in Figure 10, ac terminal, 17～19th, gate drivers, 20～22nd, the gate drivers that possesses protective circuit, 23～28th that illustrated among embodiment 1～embodiment 6, IGBT, 29～34th, diode.
In the present embodiment gate drivers that possesses protective circuit that illustrated among embodiment 1～embodiment 6 only is applied in the following brachium pontis of three-phase two-level inversion device.The overcurrent fault of inverter is that the brachium pontis short circuit that the IGBT because of upper and lower bridge arm connects simultaneously produces under more situation.Thereby, because the overcurrent that produces because of the brachium pontis short circuit must flow through IGBT up and down simultaneously, if the therefore gate drivers that possesses protective circuit that illustrated from embodiment 1～embodiment 6 in any IGBT configuration up and down then can prevent error detection.According to present embodiment,, therefore can realize avoiding reliably the inverter of the error detection of overcurrent with less component count owing to only in the gate drivers of any IGBT up and down, use error detection to prevent circuit.
More than, be illustrated for the embodiment that applies the present invention in the IGBT inverter, but do not limit therewith, similarly in the transducer of the inverter that has used power MOSFET or power MOSFET, IGBT, also can use the present invention.
Claims (14)
1. the protective circuit of a semiconductor device has:
Current detecting mechanism, its electric current to the low terminal of the current potential of a pair of main terminal of semiconductor element detects, and above-mentioned semiconductor element has a pair of main terminal and to flowing through the control terminal that this is controlled the electric current of main terminal;
Voltage detection mechanism, its voltage to the control terminal of above-mentioned semiconductor element detects; With
Import the output signal of above-mentioned current detecting mechanism and these two kinds of signals of output signal of voltage detection mechanism, the mechanism of the signal that output is controlled the voltage of above-mentioned control terminal.
2. the protective circuit of semiconductor device according to claim 1 is characterized in that,
Above-mentioned current detecting mechanism possesses:
Wiring, it is connected with the low terminal of the current potential of a pair of main terminal of above-mentioned semiconductor element;
Mapping device, its magnetic field that will be produced by the electric current that flows through this wiring is transformed to voltage; With
Voltage ratio is transfused to the voltage that this mapping device is exported than mechanism, after itself and the voltage of being scheduled to are compared, and output signal.
3. the protective circuit of semiconductor device according to claim 1 is characterized in that,
Above-mentioned current detecting mechanism possesses:
Resistance, it is connected with the low terminal of the current potential of a pair of main terminal of above-mentioned semiconductor element; With
Voltage ratio is transfused to the voltage that produces than mechanism on this resistance, after itself and the voltage of being scheduled to are compared, and output signal.
4. the protective circuit of semiconductor device according to claim 1 is characterized in that,
Above-mentioned semiconductor element possesses the current detecting terminal, the little electric current of electric current of the terminal that this current detecting terminal output is lower than the current potential that flows through above-mentioned a pair of main terminal,
Above-mentioned current detecting mechanism possesses: the resistance that is connected with above-mentioned current detecting terminal; With voltage ratio than mechanism, be transfused to the voltage that on this resistance, produces, after itself and predetermined voltage are compared, output signal.
5. the protective circuit of semiconductor device according to claim 1 is characterized in that,
Above-mentioned current detecting mechanism possesses:
The mechanism that the voltage that is created in the wiring inductance composition is detected, wherein the terminal that this wiring inductance composition and the current potential of a pair of main terminal of above-mentioned semiconductor element are low is connected;
This voltage that is created in the wiring inductance composition is carried out the integrating mechanism of integration; With
Voltage ratio is transfused to the output voltage of this integrating mechanism than mechanism, after itself and the voltage of being scheduled to are compared, and output signal.
6. the protective circuit of semiconductor device according to claim 1 is characterized in that,
Possesses a plurality of above-mentioned current detecting mechanism.
7. the protective circuit of an IGBT; this IGBT possesses collector terminal, emitter terminal and gate terminal; above-mentioned collector terminal and emitter terminal are main terminal, the control terminal of above-mentioned gate terminal for the principal current that flows through between this collector terminal and the emitter terminal is controlled
The protective circuit of above-mentioned IGBT possesses:
Flow through the testing agency of the emitter current of above-mentioned emitter terminal;
Grid voltage testing agency; With
Import the output signal of testing agency of this emitter current and the output signal of this grid voltage testing agency, the mechanism that the electric current that flows is limited or cuts off in above-mentioned IGBT.
8. the protective circuit of IGBT according to claim 7 is characterized in that,
The testing agency of above-mentioned emitter current possesses:
Mapping device, it will be transformed to voltage by the magnetic field that emitter current produces; With
Voltage ratio is transfused to the voltage that this mapping device is exported than mechanism, after itself and the voltage of being scheduled to are compared, and output signal.
9. the protective circuit of IGBT according to claim 7 is characterized in that,
The testing agency of above-mentioned emitter current possesses:
The resistance that is connected with emitter terminal; With
Voltage ratio is transfused to the voltage that produces than mechanism on this resistance, after itself and the voltage of being scheduled to are compared, and output signal.
10. the protective circuit of IGBT according to claim 7 is characterized in that,
Above-mentioned IGBT possesses the current detecting terminal, this current detecting terminal output electric current littler than above-mentioned emitter current,
The testing agency of above-mentioned emitter current possesses: the resistance that is connected with above-mentioned current detecting terminal; With voltage ratio than mechanism, be transfused to the voltage that on this resistance, produces, after itself and predetermined voltage are compared, output signal.
11. the protective circuit of IGBT according to claim 7 is characterized in that,
The current detecting mechanism of above-mentioned emitter current possesses:
To the mechanism that the voltage that is created in the wiring inductance composition detects, this wiring inductance composition is connected with the emitter terminal of above-mentioned IGBT;
This voltage that is created in the wiring inductance composition is carried out the integrating mechanism of integration; With
Voltage ratio is transfused to the output voltage of this integrating mechanism than mechanism, after itself and the voltage of being scheduled to are compared, and output signal.
12. the protective circuit of IGBT according to claim 7 is characterized in that,
Possesses a plurality of above-mentioned emitter current testing agency.
13. a power-converting device comprises: semiconductor element, its have a pair of main terminal to flowing through the control terminal that the right electric current of above-mentioned a pair of main terminal is controlled; Series circuit, its two above-mentioned semiconductor elements that are connected in series, and being connected in series between two above-mentioned semiconductor elements a little become ac terminal, and the two-terminal of the semiconductor element that is connected in series becomes dc terminal; Two drive circuits that are connected with the control terminal of two above-mentioned semiconductor elements respectively,
The either party of two above-mentioned drive circuits has:
Current detecting mechanism, its electric current to the low terminal of the right current potential of the above-mentioned a pair of main terminal of above-mentioned semiconductor element detects;
Voltage detection mechanism, its voltage to the control terminal of above-mentioned semiconductor element detects; With
Import the output signal of above-mentioned current detecting mechanism and these two kinds of signals of output signal of voltage detection mechanism, the mechanism of the signal that output is controlled the voltage of above-mentioned control terminal.
14. power-converting device according to claim 14 is characterized in that,
Above-mentioned power-converting device is three-phase two level power-converting devices,
Above-mentioned semiconductor element is any of IGBT or power MOSFET.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006077952A JP2007259533A (en) | 2006-03-22 | 2006-03-22 | Protective circuit for semiconductor element |
| JP2006077952 | 2006-03-22 | ||
| JP2006-077952 | 2006-03-22 |
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| Publication Number | Publication Date |
|---|---|
| CN101043138A CN101043138A (en) | 2007-09-26 |
| CN101043138B true CN101043138B (en) | 2011-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200710007218XA Expired - Fee Related CN101043138B (en) | 2006-03-22 | 2007-01-25 | Protection circuit for semiconductor element |
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| JP (1) | JP2007259533A (en) |
| CN (1) | CN101043138B (en) |
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| CN102868149B (en) * | 2012-09-28 | 2016-03-09 | 西安永电电气有限责任公司 | A kind of short circuit protection module of IGBT module and guard method |
| CN103280775B (en) * | 2013-06-27 | 2015-11-25 | 电子科技大学 | Insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit |
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| CN106130520A (en) * | 2016-06-17 | 2016-11-16 | 珠海格力电器股份有限公司 | IGBT short-circuit protection circuit and method, IGBT driver and IGBT circuit |
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| DE112019002590T5 (en) * | 2018-05-23 | 2021-03-18 | Mitsubishi Electric Corporation | POWER SEMI-CONDUCTOR DEVICE-PROTECTIVE CIRCUIT AND POWER MODULE |
| CN108768139B (en) * | 2018-07-12 | 2024-02-23 | 清华四川能源互联网研究院 | Current detection error compensation method and circuit in voltage drop type power stage circuit |
| JP6993949B2 (en) * | 2018-09-13 | 2022-01-14 | 株式会社東芝 | Electronic circuits and methods |
| JP7203661B2 (en) * | 2019-03-27 | 2023-01-13 | 古河電気工業株式会社 | power converter |
| JP7259570B2 (en) | 2019-06-10 | 2023-04-18 | 富士電機株式会社 | Drives and switching devices |
| CN111317972B (en) * | 2020-03-20 | 2021-11-12 | 南京林业大学 | Training device for health preserving and rehabilitation and use method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5214575A (en) * | 1990-12-14 | 1993-05-25 | Mitsubishi Denki Kabushiki Kaisha | Ground fault detector for an inverter and a method therefor |
| US5280228A (en) * | 1990-03-20 | 1994-01-18 | Hitachi, Ltd. | Inverter circuit |
| US5687049A (en) * | 1996-01-26 | 1997-11-11 | International Rectifier Corporation | Method and circuit for protecting power circuits against short circuit and over current faults |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57129128A (en) * | 1981-02-04 | 1982-08-11 | Tokyo Shibaura Electric Co | Power transistor protecting device |
| JP2708977B2 (en) * | 1990-09-28 | 1998-02-04 | 三洋電機株式会社 | Hybrid integrated circuit device |
| JPH11112313A (en) * | 1997-10-02 | 1999-04-23 | Mitsubishi Electric Corp | Semiconductor circuit and power transistor protection circuit |
| JP3454186B2 (en) * | 1999-05-14 | 2003-10-06 | 株式会社日立製作所 | Power converter |
-
2006
- 2006-03-22 JP JP2006077952A patent/JP2007259533A/en active Pending
-
2007
- 2007-01-25 CN CN200710007218XA patent/CN101043138B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5280228A (en) * | 1990-03-20 | 1994-01-18 | Hitachi, Ltd. | Inverter circuit |
| US5214575A (en) * | 1990-12-14 | 1993-05-25 | Mitsubishi Denki Kabushiki Kaisha | Ground fault detector for an inverter and a method therefor |
| US5687049A (en) * | 1996-01-26 | 1997-11-11 | International Rectifier Corporation | Method and circuit for protecting power circuits against short circuit and over current faults |
Non-Patent Citations (2)
| Title |
|---|
| JP 2005-6464 A,全文. |
| JP平9-191662A 1997.07.22 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107132466A (en) * | 2016-02-29 | 2017-09-05 | 英飞凌科技股份有限公司 | Method and device for the short-circuit detecting in power semiconductor switch |
| CN107132466B (en) * | 2016-02-29 | 2020-06-16 | 英飞凌科技股份有限公司 | Method and device for short-circuit detection in power semiconductor switches |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007259533A (en) | 2007-10-04 |
| CN101043138A (en) | 2007-09-26 |
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