CN101034728A - Illumination device - Google Patents
Illumination device Download PDFInfo
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- CN101034728A CN101034728A CNA2007100873243A CN200710087324A CN101034728A CN 101034728 A CN101034728 A CN 101034728A CN A2007100873243 A CNA2007100873243 A CN A2007100873243A CN 200710087324 A CN200710087324 A CN 200710087324A CN 101034728 A CN101034728 A CN 101034728A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The present invention provides a lighting device which can high efficiently extract white light and reduce granular sensation about light source. The lighting device includes: plural semiconductor luminescent components, transparence substrate, transparence bonding layer, reflection member, transparence sealing member, luminophore layer. The luminescent components has semiconductor luminescent layer on back laminated layer of transparence component substrate and extracts the light emitted from the luminescent layer. Lead (conductive portion) of the transparence substrate is connected with p side and n side electrodes of the luminescent component. The backside of the transparence substrate is bonded with surface of component substrate of each luminescent component via the bonding layer. The seal member is arranged at back side of the transparence substrate to seal the luminescent component. The reflection member covers the seal member. The luminophore layer covers the surface of the transparence substrate. The luminophore layer includes luminophore for wavelength convertion of first light emitted by the semiconductor luminescent layer to second light with different wavelength.
Description
Technical field
The invention relates to a kind of is the lighting device that light source obtains white light with light-emitting diode semiconductor light-emitting elements such as (LED).
Background technology
Before, known have semiconductor light emitting layer in the back laminate as the light-transmitting substrate of sapphire (sapphire), and take out led chip (semiconductor light-emitting elements) (for example, opening the 2003-347589 communique) from the surface of light-transmitting substrate with reference to the Japan Patent spy from the light that above-mentioned luminescent layer sent.
This led chip be p side that semiconductor light emitting layer is had and n lateral electrode be arranged on semiconductor light emitting layer with light-transmitting substrate opposing face side, therefore be called as two-wire (double wire) formula semiconductor light-emitting elements.This kind led chip does not have superiority because above-mentioned two electrodes are not configured in the taking-up path of light so there is not the optical loss that is caused by electrode.
And the semiconductor light emitting layer from the Japan Patent spy opens the led chip that the 2003-347589 communique disclosed except the table side direction to the semiconductor light emitting layer that light-transmitting substrate was positioned at sends the light, also sends light to the dorsal part direction of semiconductor light emitting layer.In these two kinds of light, about utilizing the latter's technology, open announcement to some extent in the 2003-347589 communique the Japan Patent spy,, make the described light reflection of the above-mentioned latter by this metal film to being positioned at the outer surface deposited metal film of the outermost dielectric film of semiconductor light emitting layer.
Open in the 2003-347589 communique the Japan Patent spy, about being that the lighting device of light source does not disclose with the led chip.When constituting lighting device, a plurality of led chips must be set to guarantee the necessary light quantity of throwing light on.At this moment, as utilizing predetermined pattern being provided with the technology that each led chip is installed respectively on the mounting substrate of lead-in wire, can consider following technology, promptly, for example spherical solder bump (bump) is installed in respectively on two electrodes of two-wire system led chip, and this solder bump is connected with the lead-in wire of mounting substrate by heat treated.But the formation of spherical solder bump needs expensive, is therefore seeking need not the additive method of above-mentioned spherical solder bump.
And in the lighting device of a plurality of led chips as light source, the light-transmitting substrate of each led chip (device substrate) is that each is self luminous.Therefore, on the light-emitting face of lighting device, can find out the luminous point independently one by one of point-like led chip, thereby cause granular sensation that therefore expectation can not cause the ligthing paraphernalia of granular sensation.
And the led chip that the Japan Patent spy opens the 2003-347589 communique is not that light that its semiconductor light emitting layer is sent carries out wavelength Conversion and the light that takes out different wave length, but throws light on illuminant colour former state ground.Therefore, the lighting device that possesses led chip in use is during as the light supply apparatus of the ligthing paraphernalia that utilizes white light to throw light on, essential new improvement.
Summary of the invention
The object of the present invention is to provide and a kind ofly can take out white light efficiently, and can alleviate the lighting device of the granular sensation of light source.
To achieve these goals, the invention of claim 1 is characterised in that and comprises: semiconductor light-emitting elements, this semiconductor light-emitting elements is that the back laminate at the light transmission device substrate has the semiconductor light emitting layer that comprises p type semiconductor layer and n type semiconductor layer, and the n lateral electrode that is located at the p lateral electrode of above-mentioned p type semiconductor layer and is located at the said n type semiconductor layer is to be configured in above-mentioned semiconductor light emitting layer and the opposing face side said elements substrate, and takes out from the light that above-mentioned semiconductor light emitting layer sent from the said elements substrate; Light-transmitting substrate is provided with the conductive part that connects above-mentioned p lateral electrode and n lateral electrode; The light transmission bonding coat is with the surperficial gluing of the device substrate of a plurality of above-mentioned semiconductor light-emitting elements back side at this light-transmitting substrate; Transparence sealing member seals above-mentioned semiconductor light-emitting elements and is arranged on the dorsal part of above-mentioned light-transmitting substrate; Reflecting member covers above-mentioned containment member and is being provided with; And luminescent coating, comprising fluorophor and be provided with in the mode that covers above-mentioned light-transmitting substrate surface, above-mentioned fluorophor carries out wavelength Conversion with the once light that above-mentioned semiconductor light emitting layer sent and sends the secondary light of different wave length.
And, to achieve these goals, the invention of claim 2 is characterised in that and comprises: semiconductor light-emitting elements, this semiconductor light-emitting elements is that the back laminate at the light transmission device substrate has the semiconductor light emitting layer that comprises p type semiconductor layer and n type semiconductor layer, and the n lateral electrode that is located at the p lateral electrode of above-mentioned p type semiconductor layer and is located at the said n type semiconductor layer is to be configured in above-mentioned semiconductor light emitting layer and the opposing face side said elements substrate, and takes out from the light that above-mentioned semiconductor light emitting layer sent from the said elements substrate; Light-transmitting substrate is provided with the conductive part that connects above-mentioned p lateral electrode and n lateral electrode; The light transmission bonding coat, comprise fluorophor and with the surperficial gluing of a plurality of said elements substrates at the back side of above-mentioned light-transmitting substrate, above-mentioned fluorophor carries out wavelength Conversion with the once light that above-mentioned semiconductor light emitting layer sent and sends the secondary light of different wave length; Transparence sealing member comprises fluorophor and seals above-mentioned semiconductor light-emitting elements and be located at the dorsal part of above-mentioned light-transmitting substrate, and above-mentioned fluorophor carries out wavelength Conversion with the once light that above-mentioned semiconductor light emitting layer sent and sends the secondary light of different wave length; And reflecting member, cover the sealing member and be provided with.
In the invention of above-mentioned each claim, for semiconductor light-emitting elements, the so-called two-wire system semiconductor light-emitting elements of preferred use, especially except can suitably using the nitride-based semiconductor of homotype, can also use homotype III-V compound semiconductor, homotype II-IV compound semiconductor, homotype IV-VI compound semiconductor etc. as semiconductor light-emitting elements.And, for the light transmission device substrate of semiconductor light-emitting elements, can use for example crystalline substrates such as sapphire, quartz, SiC, GaIN, when especially using sapphire substrate, the high light that semiconductor light emitting layer sent of transmitance from the not enough 400nm of wavelength can be fetched into with absorbing hardly the outside of sapphire substrate, therefore better.
In above-mentioned two inventions, can suitably use for example clear glass of translucent material for light-transmitting substrate, in addition, also can use the translucent material identical with the device substrate kind, and, as long as the light transmittance of this light-transmitting substrate is then good more near 100% more more than or equal to 40%.In above-mentioned two inventions, for bonding coat, for example can use suitably that transparent silicon is chips welding (die bond) material, and, for containment member, can use the light transmission sealing resin, for example silicones or epoxy resin etc.Especially silicones all has high transmission rate to the light of the nearly all wave-length coverage from the ultraviolet ray to the visible light, even shine the light of shorter wavelength for a long time, also is difficult to produce deteriorations such as variable color, therefore can be used for containment member etc. preferably.And in above-mentioned two inventions, conductive part can not have light transmission yet, but has light transmission better, can use lead-in wire or electric wire etc. as conductive part.
And, in above-mentioned two inventions, reflecting member can utilize the reflector that is made of the dope layer that is coated in the containment member surface and form, in addition, also can utilize inner face have same reflector synthetic resin etc. formed body and form, perhaps utilize the formed body that constitutes by the material that self has reflecting properties and form.As long as the light reflectivity of this reflecting member is then good more near 100% more more than or equal to 50%.And, utilize reflecting member and can suppress preferably ineffectually to send light when covering the end face of light-transmitting substrate from this end face.
And in the invention of claim 1, luminescent coating can wait by for example printing and apply and stick to the surface of light-transmitting substrate, and also can make luminescent coating form sheet, and it adhesively is located at the surface of light-transmitting substrate.Further, luminescent coating is to be adhered to the whole surface of light-transmitting substrate or the luminescent coating on the part surface.
In above-mentioned two inventions, fluorophor is to absorb to send secondary light behind the once light that semiconductor light emitting layer sent, come light is once carried out wavelength Conversion with this and send the fluorophor of the secondary light of different wave length, various inorganic phosphors or organic pigment body can be used, and the fluorophor of red colour system, green system, blue system and yellow system can be used according to the color (light source color) of the light that semiconductor light-emitting elements sent.Fluorophor preferably roughly is evenly dispersed in the bonding coat or luminescent coating or containment member that comprises fluorophor.
By the white light that lighting device obtained of above-mentioned two inventions, the mixing of 3 primary colors of the mixing of 2 coloured light that will be by having complementary color relation or R (redness), G (green), B (blueness) light realizes.Because of complementary color produce white luminous for example when semiconductor light emitting layer sends blue light, can be by using yellow fluorophor to realize to fluorophor.And, when semiconductor light emitting layer sends ultraviolet ray, can be by using the fluorophor that R (redness) fluorophor, G (green) fluorophor and B (blueness) fluorophor are mixed to realize to fluorophor.
In the invention of claim 1, used a plurality of semiconductor light-emitting elements, light quantity is increased and thrown light on as light source.Further, the light that sends to the light projector direction of lighting device by bonding coat from each semiconductor light-emitting elements not only, and send and light by containment member to the dorsal part direction (anti-light projector direction) of each semiconductor light-emitting elements, also can send to above-mentioned light projector direction, therefore can take out light efficiently by the reflecting member reflection.When above-mentioned light took out, from the once light that each semiconductor light-emitting elements sent, that is, the two light all sent through luminescent coating.At this moment, an illumination is mapped to the fluorophor that is dispersed in the luminescent coating, thereby makes fluorophor carry out wavelength Conversion and the secondary light of the different wave length that sends and do not shine fluorophor and see through the once light of luminescent coating, all shines towards illuminated object.Therefore, the mixing of 2 coloured light by having complementary color relation or trichromatic mixing and can realize white luminous.And, at the two light during all through light-transmitting substrate, because part light is reflected by interface (substrate surface and substrate back) in light-transmitting substrate, thereby can make light-transmitting substrate integral body luminous brightly, therefore can alleviate because of forming the granular sensation that a plurality of light source caused of point-like.
In the invention of claim 2, used a plurality of semiconductor light-emitting elements, light quantity is increased and thrown light on as light source.Further, the light that sends to the light projector direction of lighting device by bonding coat from each semiconductor light-emitting elements not only, and send and light by containment member to the dorsal part direction (anti-light projector direction) of each semiconductor light-emitting elements, also can send to above-mentioned light projector direction, therefore can take out light efficiently by the reflecting member reflection.When above-mentioned light took out, from the once light that each semiconductor light-emitting elements sent, that is, the two light sent by light-transmitting substrate through after comprising the bonding coat of fluorophor or comprising the containment member of fluorophor.At this moment, because of an illumination be mapped to be dispersed in the bonding coat respectively and containment member in fluorophor make fluorophor carry out the secondary light of the different wave length that wavelength Conversion sends and do not shine the once light that fluorophor sees through bonding coat or containment member, shine towards illuminated object.Therefore, the mixing of 2 coloured light by having complementary color relation or trichromatic mixing and can realize white luminous.And, when the white light that obtains with this sees through light-transmitting substrate, because part light is reflected by interface (substrate surface and substrate back) in light-transmitting substrate, thereby can make light-transmitting substrate integral body luminous brightly, therefore can alleviate because of forming the granular sensation that a plurality of light source caused of point-like.
And the invention of claim 3 is characterised in that, makes above-mentioned bonding coat as silicones system bonding coat, and utilizes refractive index more than or equal to 1.41 and less than 1.51 glass and form above-mentioned light-transmitting substrate.As employed glass among the present invention, be that glass can be enumerated for example pyrex for B-Si, be that glass can be enumerated for example silicate glasses and quartz glass for Si.And when the glass that forms light-transmitting substrate contained trace lead, plumbous content increased more, and then the refractive index of light-transmitting substrate can be big more, therefore, in order to satisfy described condition, the content of lead can be made as smaller or equal to 100ppm.
In the invention of claim 3, the situation than cheap soda (soda) quartz glass of light-transmitting substrate use can make the difference of the refractive index of bonding coat and light-transmitting substrate be reduced to below 0.1 or 0.1.Thereby once the refraction of light on the interface of bonding coat and light-transmitting substrate is suppressed, and sees through the light quantity increase of light-transmitting substrate, therefore can improve the taking-up efficient of light.
And the invention of claim 4 is characterised in that, makes above-mentioned bonding coat as silicones system bonding coat, and utilizes coefficient of thermal expansion smaller or equal to 80 * 10
-7/ ℃ material and form above-mentioned light-transmitting substrate.As employed glass among the present invention, be that glass can be enumerated for example pyrex for B-Si, be that glass can be enumerated for example silicate glasses and quartz glass for Si.
In the invention of claim 4, the difference of the coefficient of thermal expansion of bonding coat and light-transmitting substrate is less, therefore with manufacture process in irrelevant along with the variations in temperature of variations in temperature that causes in order to the reflow process of tie lines or the electrode that causes along with lighting a lamp, turning off the light etc., can suppress gluing on the light-transmitting substrate bonding coat of semiconductor light-emitting elements peel off from light-transmitting substrate.
And the invention of claim 5 is characterised in that, makes above-mentioned bonding coat as silicones system bonding coat, and utilize refractive index more than or equal to 1.41 and less than 1.15 and coefficient of thermal expansion smaller or equal to 80 * 10
-7/ ℃ glass and form above-mentioned light-transmitting substrate.
In the invention of this claim 5,, can improve the taking-up efficient of light, and can suppress bonding coat and peel off from light-transmitting substrate according to illustrated reason in claim 3,4 the invention.
And the invention of claim 6 is characterised in that making the surface of above-mentioned light-transmitting substrate is matsurface, and the above-mentioned luminescent coating that covers this surface constitutes by filming.
In the invention of this claim 6, make light from the surperficial institute outgoing of light-transmitting substrate in this surface scattering, thereby can alleviate the granular sensation that causes because of a plurality of light sources that form point-like.Further, owing to increased the luminescent coating that constitutes by filming and the gluing area on light-transmitting substrate surface, so can improve the adhesion strength of luminescent coating to the light-transmitting substrate surface.
And, the invention of claim 7 is characterised in that, the secondary light reflex layer is arranged between above-mentioned luminescent coating and the above-mentioned light-transmitting substrate, above-mentioned secondary light reflex layer makes an above-mentioned light transmission, and the above-mentioned secondary light of being radiated to above-mentioned light-transmitting substrate direction by above-mentioned fluorophor in above-mentioned luminescent coating internal reflection.
In the invention of this claim 7, the secondary light reflex layer be by make secondary light the reverberation on the plane of incidence in this reflector, and the secondary light reflex layer interfere with the reverberation that adjoins the above-mentioned secondary light that reflected on the interface of the layer that constitutes by other materials of secondary light reflex layer, and make a light transmission that sends from semiconductor light-emitting elements, on the other hand, the secondary light reflex layer is the wavelength selectivity photo interference film that is improved of the reflection characteristic of the light (that is, from secondary light that fluorophor radiated) as predetermined wavelength and bring into play function.As constituting the material that allows to see through blue light and reflect the secondary light reflex layer of sodium yellow, can enumerate for example ZnS-MgF
2(zinc sulphide-magnesium fluoride) etc.The secondary light reflex layer is formed by multilayer film.For this secondary light reflex layer, kind by suitably stipulating its constitute and thickness (number of plies) etc. obtain desired interference of light performance, on one side and can make an above-mentioned light transmission, Yi Bian improve reflecting properties to above-mentioned secondary light.
And, the white light that lighting device obtained of the invention of claim 7, the mixing of 3 primary colors of the mixing of 2 coloured light that will be by having complementary color relation or R (redness), G (green), B (blueness) light realizes.Because of complementary color produce white luminous for example when semiconductor light emitting layer sends blue light, can be by using yellow fluorophor to realize to fluorophor, when realizing that this is white luminous,, can use photo interference film by blue light and reflection sodium yellow for the secondary light reflex layer.And, when semiconductor light emitting layer sends ultraviolet ray, can use the fluorophor that R (redness) fluorophor, G (green) fluorophor and B (blueness) fluorophor are mixed to realize above-mentioned white luminous to fluorophor, when realizing that this is white luminous, for the secondary light reflex layer, can use allow to see through ultraviolet ray (once light) and the photo interference film of the redness sent of reflected fluorescent light body, green, blue light (secondary light) respectively.
In the invention of claim 7, when the light in when illumination takes out, send and see through the once light of light-transmitting substrate, after seeing through the secondary light reflex layer, shine towards illuminated object through luminescent coating from each semiconductor light-emitting elements.At this moment, an illumination is mapped to the fluorophor that is dispersed in the luminescent coating, thereby makes fluorophor carry out wavelength Conversion and the secondary light of the different wave length that sends and do not shine fluorophor and see through the once light of luminescent coating, shines towards illuminated object.Therefore, the mixing of 2 coloured light by having complementary color relation or trichromatic mixing and can in luminescent coating, realize white luminous.And, part by the secondary light that fluorophor sent is sent towards the direction different with illuminated object orientation, and this secondary light is to be taken out by the illuminated object orientation reflection of the secondary light reflex course of blocking its direct of travel, therefore can improve the taking-up efficient of light.
And the invention of claim 8 is characterised in that making above-mentioned bonding coat is transparent glass system bonding coat.
In the invention of this claim 8,,, can use low-melting glass preferably for the temperature limit that will give semiconductor light-emitting elements etc. in the manufacture process of lighting device makes lowlyer for the translucent glass that forms bonding coat.Low-melting glass preferably is the low glass of melting temperature of 692 ℃ soda-lime glass or the fusing point lead glass that is 620 ℃ than fusing point, for example can use solder glass or borate glass etc., in addition, also can use sintered glass (frit glass) of being called as what is called " waterglass " etc.Above-mentioned multiple glass material can consider to make low-melting glass and thermal coefficient of expansion by the member of this low-melting glass institute gluing to be more or less the same or the temperature of low-melting glass is lower than the condition such as heat resisting temperature of this member and suitably select.The glass bonding coat is not limited to transparent person, also can sneak into fluorophor and have specific color in inside.
In the invention of claim 8, formation is configured in the glass that light takes out in the path and semiconductor light-emitting elements is installed in the bonding coat on the light-transmitting substrate, even expose to the open air for a long time under the once light that semiconductor light emitting layer sent, can variable color yet, therefore, can not reduce because of this bonding coat causes the taking-up efficient of light.In addition, relative therewith, synthetic resin is that bonding agent is to insufficient from the light resistance of the once light that semiconductor light emitting layer sent, owing to using the variable color that produces from the yellow to the dark brown further black throughout the year, therefore in the life expectancy of lighting device, when the layer variable color of bonding agent, can make by the light of bonding agent and decay according to this variable color degree, and along with the reduction of light taking-up efficient, the lightness meeting of the light that is taken out reduces.
And, the invention of claim 9 is characterised in that, making above-mentioned light-transmitting substrate is transparent glass system substrate, make above-mentioned reflecting member for not having airproof material system member in fact, and, with above-mentioned reflecting member and above-mentioned light-transmitting substrate gluing and form peripheral device, in this periphery device, above-mentioned semiconductor light-emitting elements, conductive part and containment member have been enclosed.
In the invention of this claim 9, so-called " gas " is the notion that comprises steam, refers to enclose semiconductor light-emitting elements, conductive part and containment member and the extraneous gas of the peripheral device that is made of light-transmitting substrate and reflecting member of gluing mutually.Further, in the invention of claim 9, so-called " not having airproof material in fact " is meant with the gas smoothness of the silicones that generally can be used as containment member and compares to have the material of the gas occluding performance more than 1000 times or 1000 times.Can use for example PPA (Polyphthalamide, polyphthalamide), PBT (Poly (butyleneterephthalate), Polybutylene Terephthalate) etc. thermoplastic resin and epoxy resin etc. are as above-mentioned material, and, in order to bring into play reflecting properties, the resin material of above-mentioned material preferred white system.In the invention of claim 9, the gluing of reflecting member and light-transmitting substrate perimembranous, except using the bonding agent to guarantee airtight watertight the gluing, also the light-transmitting substrate that semiconductor light-emitting elements, conductive part and containment member are installed can be packed into makes in the shaping dies of reflecting member moulding, and is shaped and gluing along with embedding (insert).
The lighting device of the invention of claim 9 can use under the environment for use of the extraneous gas that is exposed to the pernicious gas that contains a large amount of as sulfiding gas or steam etc., thereby better.This lighting device can utilize the gas occluding performance of light-transmitting substrate and reflecting member, blocks extraneous gas and sees through light-transmitting substrate and the formed peripheral device of reflecting member and can not enter in the peripheral device.Thus, can make corrosions of metal such as the conductive part that causes because of the extraneous gas that contains sulfiding gas etc. or deterioration and the bad phenomenon that causes because of the condensate moisture on the interface between part in the peripheral device can not produce.
And the invention of claim 10 is characterised in that, makes above-mentioned bonding coat refractive index be equal to the refractive index of above-mentioned containment member.In this invention, so-called " refractive index is equal to ", the value of difference of refractive index that is meant bonding coat and containment member is in 0.1.Comprise the identical situation of refractive index in this scope, moreover, also comprise the error range that the deviation on making produces because of bonding coat and containment member.And in order to make " refractive index is equal to ", preferably making bonding coat and containment member is same material, for example is the bonding coat of transparent silicon resin system.And when being same material, the difference of the thermal expansion of bonding coat and containment member does not exist when semiconductor light-emitting elements is luminous, does not therefore have to produce the advantage of peeling off phenomenon on the interface of bonding coat and containment member yet.
The invention of this claim 10 can suppress from bonding coat directly into the light that is incident upon containment member, poor because of the refractive index of bonding coat and containment member, and reflected by bonding coat and the interface of adjoining in the containment member of bonding coat.
According to claim 1,2 invention, can provide a kind of and can take out white light efficiently, and can alleviate the lighting device of the granular sensation of light source.
According to the invention of claim 3, above-mentioned lighting device is effective aspect the taking-up efficient that further improves light.
According to the invention of claim 4, above-mentioned lighting device can suppress semiconductor light-emitting elements and peel off from light-transmitting substrate.
According to the invention of claim 5, above-mentioned lighting device is effective aspect the taking-up efficient that further improves light, and can suppress semiconductor light-emitting elements and peel off from light-transmitting substrate.
According to the invention of claim 6, above-mentioned lighting device is further alleviating aspect the granular sensation that causes because of a plurality of light sources that form point-like effectively, and can improve the adhesion strength of luminescent coating to the light-transmitting substrate surface.
According to the invention of claim 7, above-mentioned lighting device is in that to utilize the secondary light reflex layer further to improve aspect the taking-up efficient of light effective.
The phenomenon that the light that invention according to Claim 8, above-mentioned lighting device can make the variable color because of bonding coat cause takes out decrease in efficiency disappears.
Invention according to claim 9, above-mentioned lighting device does not produce corrosions of metal such as the conductive part that the intrusion because of extraneous gas causes and the misgivings of the bad phenomenon that causes because of the condensate moisture on the interface in the peripheral device, exposes to the open air as the durability under the environment for use of extraneous gass such as the pernicious gas of sulfiding gas or steam thereby can improve.
According to the invention of claim 10, above-mentioned lighting device is suppressing by bonding coat and adjoining in the boundary reflection of the containment member of bonding coat, and is effective with the taking-up efficient aspect of further raising light.
Description of drawings
Fig. 1 is the profile of the lighting device of expression the present invention the 1st example.
Fig. 2 amplifies the profile shown in the back around the semiconductor light-emitting elements that lighting device possessed with Fig. 1.
Fig. 3 is the profile that amplifies F3 part in the presentation graphs 1.
Fig. 4 is the profile of the lighting device of expression the present invention the 2nd example.
Fig. 5 is the profile of the lighting device of expression the present invention the 3rd example.
Fig. 6 amplifies the profile shown in the back around the semiconductor light-emitting elements that lighting device possessed with Fig. 5.
Fig. 7 is the profile of the lighting device of expression the present invention the 4th example.
1: lighting device 2: semiconductor light-emitting apparatus
3: light-transmitting substrate 3a: the surface of light-transmitting substrate
3c: the perimembranous 4 of light-transmitting substrate: bonding coat
4a: interface 5: reflecting member
5a: the perisporium 5b of reflecting member: supporting surface
5c: the perimembranous 5d of reflecting member: covering part
5e: incorporating section 6: containment member
7: luminescent coating 8: the secondary light reflex layer
9: peripheral device 11: device substrate
12: semiconductor light emitting layer 13: resilient coating
14:n type semiconductor layer 15: luminescent layer
16:p type coating 17:p type semiconductor layer
18:n lateral electrode 19:p lateral electrode
19a: pad 20: diaphragm
21: lead-in wire (conductive part) 22: lead
Embodiment
With reference to Fig. 1～Fig. 3 the 1st example of the present invention is described.
Among Fig. 1, the lighting device of symbol 1 expression formation LED encapsulation.Lighting device 1 comprises: a plurality of semiconductor light-emitting elements 2, light-transmitting substrate 3, bonding coat 4, reflecting member 5, containment member 6 and luminescent coating 7.
Semiconductor light-emitting elements 2 for example is to use the formed two-wire system led chip of nitride-based semiconductor, is that semiconductor light emitting layer 12 is stacked in the back side of the electric insulating quality device substrate 11 with light transmission is formed.Device substrate 11 for example utilizes the sapphire substrate made.
As shown in Figure 2, semiconductor light emitting layer 12 be on the back side of device substrate 11 successively lamination resilient coating 13, n type semiconductor layer 14, luminescent layer 15, p type coating (clad layer) 16 and p type semiconductor layer 17 are arranged and form.Luminescent layer 15 forms the quantum well structure (quantum well structure) that barrier layer (barrier layer) and trap layer (well layer) alternative stacked are formed.On part n type semiconductor layer 14, be provided with n lateral electrode 18, and on p type semiconductor layer 17, be provided with p lateral electrode 19.Has pad (bonding pad) 19a on the part of p lateral electrode 19.Further, the surface of semiconductor light emitting layer 12 utilizes by SiO
2The insulating properties diaphragm 20 that is constituted covers.Any of the pad 19a of n lateral electrode 18 and p lateral electrode 19 all is positioned at the opposition side of the device substrate 11 of semiconductor light emitting layer 12, and outstanding from diaphragm 20.Do not have the reflectance coating that sticks on the diaphragm 20 in the semiconductor light emitting layer 12, light can be sidelong to the back side yet and penetrate.
Light-transmitting substrate 3 is that glass plate is formed by transparent material.For the glass that forms this light-transmitting substrate 3, the preferred close glass material of following optical index that uses optical index that is had and the material that forms bonding coat 4 further, preferably uses coefficient of thermal expansion α smaller or equal to 80 * 10
-7/ ℃ glass material.This kind glass material, the pyrex of B-Si system, 96% silicate glasses of Si system and the quartz glass of Si system are arranged, especially aspect the gluing reliability of guaranteeing further to improve the taking-up efficient of light and further improve semiconductor light-emitting elements 2, use 96% silicate glasses and the quartz glass of Si system better.
The surperficial 3a of the face of the formation light exit side of light-transmitting substrate 3 (being the face of upside among Fig. 2) is also harmless for tabular surface, but preferred as the illustrative matsurface that forms of Fig. 3 institute summary in this example.For the surperficial 3a that makes light-transmitting substrate 3 is a matsurface, for example can utilizes the sandblast (blast) of spraying grinding agents such as sand to handle and realize by compressed air etc.The degree of the matsurface of surface 3a can be even, also can be inhomogeneous.
The size of light-transmitting substrate 3 is the sizes with enough areas of the semiconductor light-emitting elements 2 that is enough to install at its back side necessary amount.In addition, the quantity of semiconductor light-emitting elements 2 has been described two for convenience of description and only in Fig. 1, and in fact employed semiconductor light-emitting elements 2 is more than two.As shown in Figure 1, on light-transmitting substrate 3, the lead-in wire 21 that for example forms predetermined circuit patterns is installed in the back side of light-transmitting substrate 3 (below among Fig. 1) as conductive part.Lead-in wire 21 has light transmission.
Each semiconductor light-emitting elements 2 is configured between the lead-in wire 21 of adjacency, and uses bonding coat 4 and be installed in the back side (back) of light-transmitting substrate 3.At this moment, semiconductor light-emitting elements 2 so that the surperficial 3a of its device substrate 11 mode gluing relative with the back side of light-transmitting substrate 3 on light-transmitting substrate 3.Bonding coat 4 has light transmission.What this bonding coat 4 used is that for example transparent silicon is die-bond material.The optical index that becomes the silicones of die-bond material is 1.41.
The semiconductor light-emitting elements 2 that is installed on the light-transmitting substrate 3 is connected by lead (wire) 22 with the lead-in wire 21 that is adjacent to semiconductor light-emitting elements 2.Lead 22 utilizes wire bond (wire bonding) technology cheap on the manufacturing cost to be provided with.Therefore, need not the spherical solder bump of manufacturing cost costliness and electrically connect, therefore can reduce cost and better.In addition, be connected in lead-in wire 21 not shown conductor wire, the not shown through hole on the perisporium by being arranged on reflecting member 5 etc. exports to the outside of reflecting member 5.Lead-in wire 21 is electrically connected at the not shown power feeding section of the outside that is configured in lighting device 1.Therefore, when by going between 21 when supplying power to each semiconductor light-emitting elements 2, can make semiconductor light-emitting elements 2 luminous, thereby can make lighting device 1 become luminance (state of lighting a lamp).
Reflecting member 5 is formed more than or equal to 50% light reflective material such as synthetic resin by for example himself light reflectivity.In addition, reflecting member 5 also can be by being shaped by the low member of reflecting properties, and its evaporation metal reflector, inside is being provided with.This reflecting member 5 is the gabarit of double as lighting device 1 for example, is configured as the container-like of an opening.The perimembranous of the encirclement opening of reflecting member 5 have perisporium 5a continuous on the Zhou Fangxiang and on the inner peripheral surface of this perisporium 5a with rectangular-shaped continuous supporting surface 5b.Preferably, supporting surface 5b is continuous on the Zhou Fangxiang of above-mentioned perisporium, but also can make the lower portion Fig. 1 form rib (rib), and a plurality of above-mentioned ribs are set, can supporting surface 5b be set along the interior Zhou Fangxiang compartment of terrain of above-mentioned perisporium with this from supporting surface 5b.
The light-transmitting substrate 3 that semiconductor light-emitting elements 2 has been installed as mentioned above overleaf embeds in the opening of reflecting members 5, and is supported under the perimembranous of light-transmitting substrate 3 is attached to state on the supporting surface 5b.With this, close above-mentioned opening and light-transmitting substrate 3 is installed on the reflecting member 5.End face 3c continuous on the Zhou Fangxiang of this light-transmitting substrate 3 is covered by perisporium 5a.This state is being fixed by not shown bonding agent.
What therefore, containment member 6 and bonding coat 4 used is for example silicones of translucent material of the same race.With this, the refractive index of containment member 6 is equal to the refractive index as the bonding coat 4 of die-bond material, and the coefficient of thermal expansion of the two also is equal to.According to combinations thereof, send and directly into the light that is incident upon containment member 6 to the side by bonding coat 4 guiding and from this bonding coat 4, on the containment member 6 in Fig. 2 shown in the symbol 4a and the interface of bonding coat 4, situation about reflecting because of the difference of containment member 6 and the refractive index of bonding coat 4 can be suppressed, and is therefore better aspect the taking-up efficient that improves light.This kind advantage is not limited to same material, even containment member 6 is a foreign material with bonding coat 4, as long as the difference of the refractive index of the two in 0.1, in other words, as long as the refractive index of containment member 6 is equal to the refractive index of bonding coat 4, then can realize this advantage.And, make containment member 6 and bonding coat 4 be same material when made, the difference of the thermal expansion of the two is disappeared, therefore can make the stress that difference produced of the thermal expansion that causes along with the luminous of semiconductor light-emitting elements 2, can not act on the interface 4a of containment member 6 and bonding coat 4.Thereby, can prevent on above-mentioned interface 4a owing to containment member 6 and bonding coat 4 are peeled off light reflection on the release surface that causes, therefore keep aspect the taking-up efficient of light better.
The fluorophor that is contained in the luminescent coating 7,, sends the once light that semiconductor light emitting layer 12 sent the secondary light of different wave length in order to being carried out wavelength Conversion, by above-mentioned wavelength Conversion, make the white luminous of arbitrary hue till luminescent coating 7 carries out from white bulb look to the white fluorescent light color.Therefore, use the yellow fluorophor that for example has the complementary color relation with blue light, yellow thereby luminescent coating 7 is.
Above-mentioned lighting device 1 makes its luminescent coating 7 use towards illuminated object orientation.Lighting device 1 is by sending for example blue light to a plurality of semiconductor light-emitting elements 2 supply capabilities that it possessed.At this moment, the luminescent layer 15 of semiconductor light-emitting elements 2 is luminous, and light is sent to the table side direction of semiconductor light-emitting elements 2, that is, send to illuminated object orientation, also sends to the dorsal part direction of semiconductor light-emitting elements 2.
Blueness from device substrate 11 to the table side direction that send and see through is light once, at first sees through transparent bonding coat 4 and same transparent light-transmitting substrate 3, further sees through luminescent coating 7 afterwards, takes out to illuminated object orientation.On the other hand, the blueness that the side direction of supporting or opposing sends is light once, is at first reflected towards light-transmitting substrate 3 by reflecting member 5 through transparent containment member 6.Once light through reflection sees through containment member 6 once more, further be incident to light-transmitting substrate 3 by transparent lead-in wire 21, perhaps be not incident to light-transmitting substrate 3, see through after this light-transmitting substrate 3, take out to illuminated object orientation through luminescent coating 7 again by transparent lead-in wire 21.
Therefore, can use a plurality of semiconductor light-emitting elements 2 as light source, and correspondingly increase light quantity, in addition, as mentioned above, the light that sends to the light projector direction (illuminated object orientation) of lighting device 1 by bonding coat 4 from each semiconductor light-emitting elements 2 not only, and the light that is sent to the dorsal part direction of each semiconductor light-emitting elements 2, also can send to above-mentioned light projector direction, therefore can take out light expeditiously by reflecting member 5 reflections.
Further, as mentioned above, owing to make bonding coat 4 be silicones system bonding coat, and the refractive index that makes glass light-transmitting substrate 3 is more than or equal to 1.41 and less than 1.51, therefore use the situation of cheap soda quartz glass than light-transmitting substrate 3, the bonding coat 4 and the difference of the refractive index of light-transmitting substrate 3 are decreased to below 0.1 or 0.1.With this, bonding coat 4 is suppressed with the refraction of the last light in interface of light-transmitting substrate 3, and the light quantity that sees through of light-transmitting substrate 3 increases.Therefore, also can improve the taking-up efficient of light.
In addition, below various glass materials and series thereof, refractive index, coefficient of thermal expansion, light taken out efficient, and the relation of estimating be shown in table 1.Moreover the light during with the soda quartz glass takes out efficient and is defined as 100%.And so-called the evaluation is meant the evaluation for the gluing reliability of 2 pairs of light-transmitting substrates 3 of semiconductor light-emitting elements.
Table 1
| The kind of glass | The series of glass | Refractive index | Pyroconductivity α * 10 -7/℃ | The taking-up efficient of light | Estimate |
| Plumbous soda-lime glass | PB-K-Na-Si | 1.539 | 89.5 | 92 | Not |
| Plumbous soda-lime glass | PB-K-Na-Si | 1.560 | 93.5 | 95 | Not |
| Soda-lime glass | Na-Si | 1.512 | 93.5 | 100 | Not |
| Pyrex | B-Si | 1.487 | 51.5 | 108 | Good |
| Pyrex | B-Si | 1.474 | 32.5 | 107 | Good |
| 96% silicate glasses | Si | 1.458 | 7.5 | 110 | Best |
| Quartz glass | Si | 1.459 | 5.5 | 112 | Best |
According to table 1, B-Si system and Si are glass to the refractive index of light is that glass is compared the refractive index of light with Pb-K-Na-Si, and the silicones of more approaching formation bonding coat 4 is to the refractive index 1.41 of light.Hence one can see that, and having used B-Si system and Si in light-transmitting substrate 3 is the light taking-up efficient of the lighting device 1 of glass, is the light taking-up efficient of the lighting device 1 of soda quartz glass greater than used Na-Si in light-transmitting substrate 3.In contrast, Pb-K-Na-Si is the light taking-up efficient of glass as can be known, is the light taking-up efficient of the lighting device 1 of soda quartz glass less than used Na-Si in light-transmitting substrate 3.And, if the refractive index of light-transmitting substrate 3 less than the refractive index of soda quartz glass, then the taking-up efficient of light becomes big, therefore the upper limit of the refractive index of light-transmitting substrate 3 can be defined as 1.51.In contrast, more less than the refractive index 1.41 of silicon, then the difference of the two refractive index can increase the refractive index of light-transmitting substrate 3 more, thereby the reflection on the interface can increase more, therefore the undergage of the refractive index of light-transmitting substrate 3 can be decided to be 1.41.
And, because reflecting member 5 has covered light-transmitting substrate 3 and luminescent coating 7 end face separately, therefore can prevent the light of in light-transmitting substrate 3, advancing to being parallel to its plate face direction, ineffectually send from the end face of this light-transmitting substrate 3, and also can prevent the light of in luminescent coating 7, advancing, send from the end face of this luminescent coating 7 to being parallel to its bedding angle.Thereby the light that can further improve on the removing direction (illuminated object orientation) of light takes out efficient.
Then, when light takes out, send and, all send as mentioned above through luminescent coating 7 through the blueness of described two paths light once from each semiconductor light-emitting elements 2.At this moment, the blue once part of light does not shine the fluorophor that is dispersed in the luminescent coating 7, but sees through luminescent coating 7, but remaining once light then shines fluorophor.With this, fluorophor absorbs blue light and sends yellow secondary light, pretends to sodium yellow and sees through luminescent coating 7.As mentioned above, the once light that the illuminant colour of semiconductor light-emitting elements 2 is promptly blue, with by fluorophor to this once light carry out wavelength Conversion and form the secondary light that has the yellow of complementary color relation with light once, see through luminescent coating 7, therefore can make white light by the mixing of above-mentioned 2 looks.In other words, can realize white luminous.
And when through the light of described two paths during all through light-transmitting substrate 3, because part light reflects by interface (substrate surface and substrate back) in light-transmitting substrate 3, thereby whole light-transmitting substrate 3 is luminous brightly and become planar luminous state.In addition, because the surperficial 3a of light-transmitting substrate 3 is a matsurface, therefore on the 3a of this surface, can scattering from the light of light-transmitting substrate 3 outgoing, make whole light-transmitting substrate 3 luminous brightly and become planar luminous state.
Therefore, be in the lighting device 1 of light source with a plurality of semiconductor light-emitting elements 2, luminous respectively irrelevant with the device substrate 11 of each semiconductor light-emitting elements 2, in the eye impressions of the overall optical exit facet of lighting device 1, can alleviate with each semiconductor light-emitting elements 2 one by one independently luminous point regard the sensation of " particle " as.
As mentioned above, be the ligthing paraphernalia that light supply apparatus is assembled according to above-mentioned lighting device 1 and with this lighting device 1, white light can be taken out expeditiously, and sensation can be alleviated luminous the regarding as " particle " of each semiconductor light-emitting elements 2.
And according to above-mentioned table 1, any of coefficient of thermal expansion α of pyrex, 98% silicate glasses and quartz glass that can improve the taking-up efficient of light is all less than the coefficient of thermal expansion α of soda-lime glass and plumbous soda-lime glass.Therefore, when forming light-transmitting substrate 3 when utilizing pyrex, 98% silicate glasses and quartz glass, silicones system bonding coat 4 diminishes with the difference of the coefficient of thermal expansion of light-transmitting substrate 3.Therefore, with irrelevant in the manufacture process of lighting device 1, can suppress bonding coat 4 and peel off (be also referred to as and crack (crack)) from the back side of light-transmitting substrate 3 along with the variations in temperature of variations in temperature that causes in order to the reflow process of tie lines and the electrode 18,19 that causes along with lighting a lamp, turning off the light of lighting device 1 etc.Therefore, can guarantee the adhesion reliability of 2 pairs of light-transmitting substrates 3 of semiconductor light-emitting elements, semiconductor light-emitting elements 2 can not come off.Relative therewith, present inventor's experimental result can be confirmed, when utilizing soda-lime glass and plumbous soda-lime glass to form light-transmitting substrate 3, can't guarantee the adhesion reliability of 2 pairs of light-transmitting substrates 3 of semiconductor light-emitting elements, and, present inventor's result of experiment can confirm, in order to obtain to adhere to fully reliability in practicality, as long as the coefficient of thermal expansion that makes the glass that forms light-transmitting substrate 3 is smaller or equal to 80 * 10
-7, then more little effective more.
And, for the light that improves above-mentioned lighting device 1 takes out efficient, be not to make each semiconductor light-emitting elements 2 self as mentioned above, but make the light that sends to its dorsal part direction, thereby take out light expeditiously by reflecting member 5 reflections.Therefore, can omit for each semiconductor light-emitting elements 2 and utilize evaporation that trouble operation in the manufacturing in reflector is set.That is, need not to implement evaporation and make the technology of light reflection with manufacturing extreme difference under the difficult situation of metal film in the subregion of minimum led chip.And, even if deposited metal film for example can realize easily that also the reflecting member 5 that makes shape be far longer than semiconductor light-emitting elements 2 has reflectivity.Therefore, make easily and better.
With reference to Fig. 3 the 2nd example of the present invention is described.In the explanation of following the 2nd example, for the structure identical, mark identical symbol with the 1st example, omit its explanation.In the 2nd example, omit employed luminescent coating in the 1st example, replacing makes bonding coat 4 and containment member 6 have the function of luminescent coating.
That is, in bonding coat 4 with light transmission, the yellow fluorophor (not shown) that for example blue light that sent with semiconductor light-emitting elements 2 of roughly being scattered here and there equably has the complementary color relation.Equally, in having translucent sealing 6, the yellow fluorophor (not shown) that the blue light that sent with semiconductor light-emitting elements 2 of being scattered here and there has the complementary color relation.And in the 2nd example, the surperficial 3a that makes light-transmitting substrate 3 is a tabular surface, but in order to alleviate the granular sensation of light source, can be matsurface as the illustrated surperficial 3a that makes light-transmitting substrate 3 of the 1st example also.Except that item discussed above, identical with the 1st example.
The lighting device 1 of the 2nd example makes its light-transmitting substrate 3 use towards illuminated object orientation.Lighting device 1 is by sending blue light to a plurality of semiconductor light-emitting elements 2 supply capabilities that it possessed.At this moment, the luminescent layer 15 of semiconductor light-emitting elements 2 is luminous, and light is sent to the table side direction of semiconductor light-emitting elements 2, that is, send to illuminated object orientation, also sends to the dorsal part direction of semiconductor light-emitting elements 2.
Blueness from device substrate 11 to the table side direction that send and see through is light once, at first sees through yellow bonding coat 4 and transparent light-transmitting substrate 3, takes out to illuminated object orientation.On the other hand, the blueness that the side direction of supporting or opposing sends is light once, is at first reflected towards light-transmitting substrate 3 by reflecting member 5 through yellow containment member 6.Once light through reflection sees through containment member 6 once more, further be incident to light-transmitting substrate 3 by transparent lead-in wire (conductive part) 21, perhaps be not incident to light-transmitting substrate 3,, take out to illuminated object orientation through behind the light-transmitting substrate 3 by transparent lead-in wire (conductive part) 21.
Therefore, can use a plurality of semiconductor light-emitting elements 2 as light source, and it is corresponding therewith and increase light quantity, in addition, as mentioned above, the light that sends to the light projector direction of lighting device 1 by bonding coat 4 from each semiconductor light-emitting elements 2 not only, and the light that is sent to the dorsal part direction of each semiconductor light-emitting elements 2, also can send to above-mentioned light projector direction, therefore can take out light expeditiously by reflecting member 5 reflections.
And, because the perisporium 5a of reflecting member 5 has covered the end face 3c of light-transmitting substrate 3, therefore can prevent the light of in light-transmitting substrate 3, advancing to being parallel to its plate face direction, ineffectually send from the end face of this light-transmitting substrate 3.Thereby the light that can further improve on the removing direction (illuminated object orientation) to light takes out efficient.
Then, when light takes out, send and through the blueness of described two paths light once, all see through the containment member 6 of yellow bonding coat 4 or yellow as mentioned above and send from each semiconductor light-emitting elements 2.At this moment, the blue once part of light does not shine the fluorophor that is dispersed in bonding coat 4 and the containment member 6, but sees through bonding coat 4 and containment member 6, but remaining once light then shines fluorophor.With this, fluorophor absorbs blue light and sends yellow secondary light, pretends to sodium yellow and sees through bonding coat 4 and containment member 6.As mentioned above, the once light that the illuminant colour of semiconductor light-emitting elements 2 is promptly blue, with by fluorophor to this once light carry out wavelength Conversion and form the secondary light that has the yellow of complementary color relation with light once, all see through bonding coat 4 and containment member 6, therefore can make white light by the mixing of above-mentioned 2 looks.In other words, can realize white luminous.
And, when through the light of described two paths during all through light-transmitting substrate 3, because part light is reflected by interface (substrate surface and substrate back) in light-transmitting substrate 3, thereby whole light-transmitting substrate 3 is luminous brightly and become planar luminous state, so can alleviate the granular sensation of a plurality of point source of lights.
As mentioned above, be the ligthing paraphernalia that light supply apparatus is assembled according to the lighting device 1 of the 2nd example and with this lighting device 1, white light can be taken out expeditiously, and sensation can be alleviated luminous the regarding as " particle " of each semiconductor light-emitting elements 2.Further, in the 2nd example, owing to can omit employed luminescent coating in the 1st example as mentioned above, therefore can form simple structure and better.
Identical with the 1st example, make by the once light of sapphire system device substrate 11 lossless on the n of semiconductor light-emitting elements 2 lateral electrode 18 and p lateral electrode 19, in addition, the light that also can utilize the side direction of supporting or opposing as mentioned above to send carries out luminous, therefore, changing in the structure of the 2nd example and at for example light reflectivity of reflecting member 5 under 91% the condition, can realize that the luminous efficiency when 20mA lights a lamp is that 130l/W, light beam are the high-luminous-efficiency of 9.8lm.Relative therewith, with the two-wire system led chip so that the light-emitting face of its sapphire system device substrate (surface) towards being installed on the installation base plate with the rightabout mode of light projecting direction, and utilize the translucent resin that has added fluorophor that table side and the dorsal part of this led chip from installation base plate sealed and the lighting device of formation, luminous efficiency when 20mA lights a lamp is 80l/W, and light beam is 4.8lm.This result be because, in the lighting device of comparison other, make by the once light of sapphire system device substrate lossyly on the n of semiconductor light-emitting elements lateral electrode and p lateral electrode, and can't utilize the light that sends to the dorsal part direction opposite by device substrate with the light projecting direction.
And, for the light of the lighting device 1 that improves the 2nd example takes out efficient, be not to make each semiconductor light-emitting elements 2 self as mentioned above, but make the light that sends to its dorsal part direction, thereby take out light expeditiously by reflecting member 5 reflections.Therefore, can omit for each semiconductor light-emitting elements 2 and utilize evaporation that trouble operation in the manufacturing in reflector is set.And, even if deposited metal film for example can realize easily that also the reflecting member 5 that makes shape be far longer than semiconductor light-emitting elements 2 has reflectivity.Therefore, make easily and better.
With reference to Fig. 5 and Fig. 6 the 3rd example of the present invention is described.In the explanation of following the 3rd example, for the structure identical, mark identical symbol with the 1st example, omit its explanation.In the 3rd example, as shown in Figure 5, secondary light reflex layer 8 is arranged between luminescent coating 7 and the light-transmitting substrate 3, for example lamination is thereon.
Secondary light reflex layer 8 be by make secondary light the reverberation on the plane of incidence in this reflector 8, and secondary light reflex layer 8 interfere with the reverberation that adjoins the above-mentioned secondary light that on the interface of the layer that constitutes by other materials of secondary light reflex layer 8, is reflected, and make a light transmission that is sent from semiconductor light-emitting elements 2, on the other hand, secondary light reflex layer 8 is wavelength selectivity photo interference films of being improved of the reflection characteristic of the light (that is, from secondary light that fluorophor radiated) as predetermined wavelength and bring into play function.Secondary light reflex layer 8 is formed by multilayer film.For this secondary light reflex layer 8, kind by suitably stipulating its constitute and thickness (number of plies) etc. obtain desired interference of light performance, on one side and can make an above-mentioned light transmission, Yi Bian improve reflecting properties to above-mentioned secondary light.
Reflect the material of secondary light reflex layer 8 that has the sodium yellow of complementary color relation with this blue light as constitute to allow seeing through blue light, can enumerate for example ZnS-MgF
2(zinc sulphide-magnesium fluoride) etc.Light transmittance in the wavelength domain of the semiconductor light-emitting elements 2 of the secondary light reflex layer 8 that is made of this material is 95%, and the light transmittance in the wavelength domain of the fluorophor of secondary light reflex layer 8 is 10%, and light reflectivity is 85%.Except that item discussed above, identical with the 1st example.
When the semiconductor light-emitting elements 2 of the lighting device 1 of the 3rd example is luminous, blueness from device substrate 11 to the table side direction that send and see through is light once, at first see through transparent bonding coat 4 and same transparent light-transmitting substrate 3, see through secondary light reflex layer 8 afterwards, further see through luminescent coating 7, take out to illuminated object orientation.On the other hand, the blueness that the side direction of supporting or opposing sends is light once, is at first reflected towards light-transmitting substrate 3 by reflecting member 5 through transparent containment member 6.Once light through reflection sees through containment member 6 once more, further be incident to light-transmitting substrate 3 by transparent lead-in wire 21, perhaps be not incident to light-transmitting substrate 3 from containment member 6 by transparent lead-in wire 21, after seeing through this light-transmitting substrate 3, see through secondary light reflex layer 8 again, further take out to illuminated object orientation through luminescent coating 7.
When this light takes out, by the part of the yellow secondary light that fluorophor sent towards sending with illuminated object orientation opposition side.But this secondary light (among Fig. 6 with dotted arrow D representative) is reflected to illuminated object orientation by the secondary light reflex layer 8 that blocks its direct of travel, and sees through luminescent coating 7 and take out.Therefore, can improve the taking-up efficient of light.
Promptly, suppose no secondary light reflex layer 8, then from fluorophor after the yellow secondary light of being sent with illuminated object orientation opposition side is by light-transmitting substrate 3 and containment member 6 etc., by reflecting member 5 reflections, once more by behind containment member 6 and the light-transmitting substrate 3, see through luminescent coating 7, therefore, the light path till taking out is longer.The size of optical attenuation, square value that can be by optical path length and the material attenuation rate in the above-mentioned path multiply each other and obtain.Thereby, after bigger decay, be removed to the sodium yellow that is sent with illuminated object orientation rightabout from fluorophor.
Relative therewith, in the 3rd example, in the position of more approaching from luminescent coating 7 to reflecting member 5 distance out and away, therefore sodium yellow is reflected to illuminated object orientation by secondary light reflex layer 8, is suppressed from the decay of fluorophor to the sodium yellow that is sent with illuminated object orientation opposition side.Thereby, can improve the taking-up efficient of the secondary light that fluorophor radiated on the basis of the once light that semiconductor light-emitting elements 2 sends.Present inventor's results of comparative experiment is, the luminous efficiency in the lighting device 1 of no secondary light reflex layer 8 is 50l/W, and is relative therewith, and the luminous efficiency of lighting device 1 that possesses this example of secondary light reflex layer 8 is 80l/W.
Further, when through the light of described two paths during all through light-transmitting substrate 3, because part light reflects by interface (substrate surface and substrate back) in light-transmitting substrate 3, thereby whole light-transmitting substrate 3 is luminous brightly and become planar luminous state.Therefore, be in the lighting device 1 of light source with a plurality of semiconductor light-emitting elements 2, luminous respectively irrelevant with the device substrate 11 of each semiconductor light-emitting elements 2, in the eye impressions of the overall optical exit facet of lighting device 1, can alleviate with each semiconductor light-emitting elements 2 one by one independently luminous point regard the sensation of " particle " as.
With reference to Fig. 7 the 4th example of the present invention is described.In the explanation of following the 4th example, for the structure same, mark identical symbol with the 1st example, omit its explanation.
In the 4th example, light-transmitting substrate 3 forms peripheral device 9 with reflecting member 5 mutual gluings.Therefore, the perimembranous 5c gluing of reflecting member 5 is in the perimembranous of light-transmitting substrate 3.Perimembranous 5c covers at least and gluing gets final product in last continuous end face (side face) 3c of the Zhou Fangxiang of light-transmitting substrate 3.But, in this example, be that perimembranous 5c has perisporium 5a and integrally formed covering part 5d on supporting surface 5b and perisporium 5a as the better implement example.Covering part 5d covering and gluing are in the surperficial 3a of the light-emitting face side of the perimembranous of light-transmitting substrate 3.With this, the perimembranous of light-transmitting substrate 3 is enclosed in gluing in the perimembranous 5c of this reflecting member 5.
Therefore, built-in assembling (assembly) is enclosed in the peripheral device 9, so that it does not contact the environmental gas outside the peripheral device 9.This built-in assembling comprises: gluing is in the semiconductor light-emitting elements 2 at the back side of light-transmitting substrate 3 by bonding coat 4; Be arranged on the lead-in wire 21 at the back side of light-transmitting substrate 3; The lead 22 that connects above-mentioned semiconductor light-emitting elements 2 and lead-in wire 21; And the transparent silicon resin system containment member 6 that is embedded with semiconductor light-emitting elements 2 and lead 22 etc.
The gluing of the perimembranous of the perimembranous 5c of reflecting member 5 and light-transmitting substrate 3 can be realized in the following manner: will be built in the above-mentioned built-in assembling in the peripheral device 9, pack into and make in the shaping dies of reflecting member 5 shapings, implement to embed be shaped, the direct gluing of perimembranous 5c of reflecting member 5 that makes formed thereby thus is in the perimembranous of light-transmitting substrate 3.Therefore, the reliability of gluing is higher than the situation of using bonding agent.
Peripheral device 9 is compared with transparent silicon resin system containment member 6, is constituted by having airproof material in fact.Therefore, particularly, light-transmitting substrate 3 is by can being formed by the clear glass that chips welding is installed semiconductor light-emitting elements 2, and reflecting member 5 is for example by the epoxy resin formed thereby of white color system.And, the gluing of the perimembranous of the perimembranous 5c of reflecting member 5 and light-transmitting substrate 3 as mentioned above, continuous end face 3c gluing on the Zhou Fangxiang of light-transmitting substrate 3 not only, and at covering part 5d gluing, therefore the gluing area is bigger, with this, consider that binding face that extraneous gas passes through light-transmitting substrate 3 and reflecting member 5 arrives the possibility in the peripheral device 9, its path is formed under the state of bending more longways, therefore can prevent reliably that extraneous gas from entering in the peripheral device 9 by above-mentioned path.
Utilize the structure of above-mentioned peripheral device 9, when for example under the high environment of sulfiding gas concentration such as hot spring ground, using lighting device 1, sulfiding gas in the external environment condition can not see through peripheral device 9, and the metal parts that is comprised with above-mentioned built-in assembling, that is, the electrode 18 and 19 of lead-in wire 21, lead 22 and semiconductor light-emitting elements 2 reacts.Thus, the lighting device 1 of this example can not produce that above-mentioned metal parts corrodes because of sulfiding gas etc. and deterioration may, under aforesaid environment, also can use preferably.
And, for example when lighting device 1 during in outdoor application etc. under the situation, utilize the peripheral device 9 of said structure can stop water contained in the extraneous gas or steam to see through peripheral device 9 and enter its inside, also can not be created in the possibility of condensation on the interface between each part in the peripheral device 9.Therefore, can not produce the bad phenomenon that causes because of above-mentioned internal condensation.
That is, can think that hypothesis sees through the moisture condensation on the interface between the above-mentioned metal parts in the peripheral device 9, then may therefore cause the corrosion of metal parts.Further, can think, then may cause the dielectric voltage withstand deficiency if invading the condensation position of the moisture in the peripheral device 9 for example is the position of close semiconductor light-emitting elements 2.And, no matter the condensation position wherein, because when semiconductor light-emitting elements 2 is luminous, condensed water can be followed the temperature of this semiconductor light-emitting elements 2 to rise and evaporate, thereby consider that may cause to accumulate the interface that the condensed water under this vapour pressure is arranged is that starting point is peeled off, and therefore, can produce the possibility that lighting device 1 can't be kept predetermined confined state, in addition, reckon with further increase of condensation area meeting and impel the corrosion of metal parts and the reduction of dielectric voltage withstand etc.
In addition, the gas-premeable of transparent silicon resin is higher than the constituent material of peripheral device 9 far away.Particularly, be that when the oxygen permeability of the epoxy resin that makes the reflecting member 5 that forms peripheral device 9 was 100.0, the oxygen permeability of silicones (silicon rubber) was 7218897.6, is about 7000 times of epoxy resin under 25 ℃ the condition in temperature.And as a comparison, the oxygen permeability of PMMA (Poly (methyl methacrylate), polymethyl methacrylate) is 1503.9, is about 1000 times of epoxy resin.Therefore, substantially do not provide in the peripheral device 9 airproof structures, enter inside, the possibility that therefore can't avoid sulfiding gas or steam etc. and metal in the above-mentioned built-in assembling to react owing to sulfiding gas or steam etc. see through this periphery device 9.
And, as mentioned above,, therefore be configured as reservation shape easily and better because the reflecting member 5 of peripheral device 9 is to have airproof thermmohardening type synthetic resin system reflecting member in fact.Utilize this formability, in this example, reflecting member 5 have corresponding to each semiconductor light-emitting elements 2 concavity for example section be the roughly incorporating section 5e of semi-circular shape.In above-mentioned incorporating section 5e, taken in containment member 6 with the state of filling.Containment member 6 in this example is to use the shaping dies of the light-transmitting substrate 3 of packing into and at the back-welding shape of light-transmitting substrate 3, on this light-transmitting substrate 3 semiconductor light-emitting elements 2 has been installed.On the surface of sealing member 6, reflecting member 5 is shaped under the state that has embedded built-in assembling as mentioned above, thus, when incorporating section 5e is shaped, with the inner face of this incorporating section 5e and the outside gluing of containment member 6.
Compare with the 1st example,, can reduce the use amount of containment member 6 by forming the reflecting member 5 of said structure.Further, make concave shape to the incorporating section 5e of the light of the back side of semiconductor light-emitting elements 2 direction outgoing reflection, the desired light distribution characteristic that can require according to lighting device 1 utilizes above-mentioned formability and for example is configured as mentioned above roughly arbitrary shape such as semicircle.
And in this example, luminescent coating 7 is not the whole zone that is arranged on the surperficial 3a of the light-emitting face that forms light-transmitting substrate 3, and is arranged on its subregion, particularly, is arranged on from the zone that light saw through of incorporating section 5e reflection.As long as above-mentioned luminescent coating 7 has at least the size more than or equal to the opening footpath of incorporating section 5e, portion in the central, when frontal observation lighting device 1, projection has semiconductor light-emitting elements 2 from the back side., compare not at the whole surperficial 3a of light-transmitting substrate 3 but luminescent coating 7 is set on part surface by above-mentioned, can reduce the use amount of the luminescent coating 7 of having sneaked into fluorophor with the 1st example.
Except that item discussed above, identical with the 1st example.Therefore, in the 4th example, according to the 1st example in the same reasons that illustrated, the lighting device 1 that solves problem of the present invention also can be provided, this lighting device 1 can take out white light expeditiously, and can alleviate the granular sensation of light source.In addition, structure of the peripheral device that is adopted in the 4th example etc. also can be applicable to the 2nd, the 3rd example.
The present invention is not limited to above-mentioned each example.For example, in above-mentioned each example, bonding coat 4 can be transparent glass system.
For the translucent glass that forms this bonding coat 4,, can use low-melting glass preferably for the temperature limit that will give semiconductor light-emitting elements etc. in the manufacture process of lighting device 1 makes lowlyer.Low-melting glass preferably is the low glass of melting temperature of 692 ℃ soda-lime glass or the fusing point lead glass that is 620 ℃ than fusing point, for example can use solder glass or borate glass etc., in addition, also can use sintered glass of being called as so-called " waterglass " etc.Above-mentioned multiple glass material can consider to make low-melting glass and thermal coefficient of expansion by the member of this low-melting glass institute gluing to be more or less the same and the temperature of low-melting glass is lower than the condition such as heat resisting temperature of this member and suitably select.Because the gluing that uses low-melting glass that semiconductor light-emitting elements 2 is carried out on glass light-transmitting substrate 3 in the bonding coat 4 is the gluing between same material, therefore can greatly improve the reliability that nothing is peeled off between semiconductor light-emitting elements 2 and the substrate 3, thereby better.The glass bonding coat is not limited to transparent, also can sneak into fluorophor and have specific color in inside.
As mentioned above, for being not translucent synthetic resin systems such as silicon but the bonding coat 4 of glass, even expose to the open air for a long time under the once light that is sent from semiconductor light emitting layer 12, can variable color yet.Therefore, can not cause the taking-up efficient of light to reduce because of the variable color of bonding coat 4, thereby can take out light for a long time expeditiously.
Particularly, for example in the lighting device 1 of the 1st example shown in Figure 1, using coefficient of thermal expansion when the glass of light-transmitting substrate 3 usefulness of the semiconductor light-emitting elements 2 that the radiation blue light has been installed is 100 * 10
-7/ ℃ soft glass, and the glass that forms bonding coat 4 to use coefficient of thermal expansion be 80 * 10
-7/ ℃ low-melting glass the time, the lightness reduced rate when lighting a lamp in continuous 10,000 hours is 10%.In addition, can think that this reduction forms the deterioration of the glass of bonding coat 4 (variable color) no thanks to and causes, but because the variable color of the resin in the luminescent coating 7.And in the time of as a comparative example, except bonding coat 4 used epoxy resin, palpiform became the lighting device of condition same as described above, and the lightness reduced rate when this lighting device was lit a lamp in continuous 10,000 hours is 20%.
Claims (10)
1. lighting device is characterized in that comprising:
Semiconductor light-emitting elements, this semiconductor light-emitting elements is that the back laminate at the light transmission device substrate has the semiconductor light emitting layer that comprises p type semiconductor layer and n type semiconductor layer, and the n lateral electrode that is located at the p lateral electrode of above-mentioned p type semiconductor layer and is located at the said n type semiconductor layer be configured in above-mentioned semiconductor light emitting layer with said elements substrate opposing face side, and take out from the light that above-mentioned semiconductor light emitting layer sent from the said elements substrate;
Light-transmitting substrate is provided with the conductive part that connects above-mentioned p lateral electrode and n lateral electrode;
The light transmission bonding coat is with the surperficial gluing of the device substrate of a plurality of above-mentioned semiconductor light-emitting elements back side at this light-transmitting substrate;
Transparence sealing member seals above-mentioned semiconductor light-emitting elements and is arranged on the dorsal part of above-mentioned light-transmitting substrate;
Reflecting member covers above-mentioned containment member and is being provided with; And
Luminescent coating comprises fluorophor and is being provided with in the mode that covers above-mentioned light-transmitting substrate surface, and above-mentioned fluorophor carries out wavelength Conversion with the once light that above-mentioned semiconductor light emitting layer sent and sends the secondary light of different wave length.
2. lighting device is characterized in that comprising:
Semiconductor light-emitting elements, this semiconductor light-emitting elements is that the back laminate at the light transmission device substrate has the semiconductor light emitting layer that comprises p type semiconductor layer and n type semiconductor layer, and the n lateral electrode that is located at the p lateral electrode of above-mentioned p type semiconductor layer and is located at the said n type semiconductor layer be configured in above-mentioned semiconductor light emitting layer with said elements substrate opposing face side, and take out from the light that above-mentioned semiconductor light emitting layer sent from the said elements substrate;
Light-transmitting substrate is provided with the conductive part that connects above-mentioned p lateral electrode and n lateral electrode;
The light transmission bonding coat, comprise fluorophor and with the surperficial gluing of a plurality of said elements substrates at the back side of above-mentioned light-transmitting substrate, above-mentioned fluorophor carries out wavelength Conversion with the once light that above-mentioned semiconductor light emitting layer sent and sends the secondary light of different wave length;
Transparence sealing member comprises fluorophor and seals above-mentioned semiconductor light-emitting elements and be located at the dorsal part of above-mentioned light-transmitting substrate, and above-mentioned fluorophor carries out wavelength Conversion with the once light that above-mentioned semiconductor light emitting layer sent and sends the secondary light of different wave length; And
Reflecting member covers the sealing member and is being provided with.
3. lighting device as claimed in claim 1 or 2 is characterized in that, making above-mentioned bonding coat is silicones system bonding coat, and utilizes refractive index more than or equal to 1.41 and less than 1.51 glass and form above-mentioned light-transmitting substrate.
4. lighting device as claimed in claim 1 or 2 is characterized in that, making above-mentioned bonding coat is silicones system bonding coat, and utilizes coefficient of thermal expansion smaller or equal to 80 * 10
-7/ ℃ material and form above-mentioned light-transmitting substrate.
5. lighting device as claimed in claim 1 or 2 is characterized in that, making above-mentioned bonding coat is silicones system bonding coat, and utilize refractive index more than or equal to 1.41 and less than 1.15 and coefficient of thermal expansion smaller or equal to 80 * 10
-7/ ℃ glass and form above-mentioned light-transmitting substrate.
6. lighting device as claimed in claim 1 is characterized in that, making the surface of above-mentioned light-transmitting substrate is matsurface, and the above-mentioned luminescent coating that covers this surface constitutes by filming.
7. lighting device as claimed in claim 1, it is characterized in that, the secondary light reflex layer is arranged between above-mentioned luminescent coating and the above-mentioned light-transmitting substrate, above-mentioned secondary light reflex layer makes an above-mentioned light transmission, and the above-mentioned secondary light of being radiated to above-mentioned light-transmitting substrate direction by above-mentioned fluorophor in above-mentioned luminescent coating internal reflection.
8. lighting device as claimed in claim 1 or 2 is characterized in that, making above-mentioned bonding coat is transparent glass system bonding coat.
9. lighting device as claimed in claim 1 or 2, it is characterized in that, making above-mentioned light-transmitting substrate is transparent glass system substrate, make above-mentioned reflecting member for not having airproof material system member in fact, and, with above-mentioned reflecting member and above-mentioned light-transmitting substrate gluing and form peripheral device, in this periphery device, above-mentioned semiconductor light-emitting elements, conductive part and containment member have been enclosed.
10. lighting device as claimed in claim 1 or 2 is characterized in that, makes the refractive index of above-mentioned bonding coat be equal to the refractive index of above-mentioned containment member.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2006066391 | 2006-03-10 | ||
| JP2006066391 | 2006-03-10 | ||
| JP2006220432 | 2006-08-11 | ||
| JP2007022280 | 2007-01-31 |
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| CN101034728A true CN101034728A (en) | 2007-09-12 |
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| CNA2007100873243A Pending CN101034728A (en) | 2006-03-10 | 2007-03-09 | Illumination device |
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| CN102299238A (en) * | 2010-06-25 | 2011-12-28 | 松下电工株式会社 | Light-emitting device and LED lighting appliance using the light-emitting device |
| CN102664230A (en) * | 2012-05-29 | 2012-09-12 | 邓崛 | LED (light emitting diode) lighting device and manufacturing method thereof |
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- 2007-03-09 CN CNA2007100873243A patent/CN101034728A/en active Pending
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| CN102299238A (en) * | 2010-06-25 | 2011-12-28 | 松下电工株式会社 | Light-emitting device and LED lighting appliance using the light-emitting device |
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| CN102664230A (en) * | 2012-05-29 | 2012-09-12 | 邓崛 | LED (light emitting diode) lighting device and manufacturing method thereof |
| CN110335932A (en) * | 2013-07-01 | 2019-10-15 | 晶元光电股份有限公司 | Light-emitting diode component and production method |
| CN104659195B (en) * | 2014-12-24 | 2017-08-29 | 绍兴文理学院 | A kind of reflection white-light LED/light source |
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