CN101034690A - Semiconductor package with the heat radiation device and its making method - Google Patents
Semiconductor package with the heat radiation device and its making method Download PDFInfo
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- CN101034690A CN101034690A CNA2006100585133A CN200610058513A CN101034690A CN 101034690 A CN101034690 A CN 101034690A CN A2006100585133 A CNA2006100585133 A CN A2006100585133A CN 200610058513 A CN200610058513 A CN 200610058513A CN 101034690 A CN101034690 A CN 101034690A
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- heat abstractor
- semiconductor package
- package part
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a semiconductor packaging piece which has a heat sink and preparation method, the semiconductor packaging piece includes: foundation plate; the function chip, which sets on the foundation plate; the heat sink sets on the function chip, the contain space to cool fluid setup in the heat sink interior, also the heat sink has the first opening and the secong opening to connect the contain space, the contained cool fluid adsorbed and fleed the heat which produces from the function chip; and the packaging colloid, which is formed between the heat sink and the foundation plate, cladding the function chip. The semiconductor packaging piece with the heat sink of the invention and the method produced semiconductor packaging piece has high radiation, simultaneously because of heat sink effective embeded in the semiconductor packaging piece, promotes the reliability and radiation of the semiconductor packaging piece, the outside hotcirculation installment, effectively promotes the radiation efficiency.
Description
Technical field
The invention relates to a kind of semiconductor package part and method for making thereof, particularly about a kind of semiconductor package part and method for making thereof with heat abstractor.
Background technology
Flip chip ball grid array (Flip Chip Ball Grid Array, abbreviation FCBGA) semiconductor package part is a kind of advanced person's a semiconductor packaging, plant on the action face of its chip (promptly forming the surface of electronic component) and connect a plurality of welding blocks, this welding block is soldered to substrate, makes chip and substrate form electrical connection.
The radiating mode of existing flip-chip type semiconductor packaging part, be as United States Patent (USP) the 5th, 311,402,5,637,920 and 6, shown in 011,304 grade, can be divided into two kinds of forms, the first connects flip-chip to put on substrate and form the flip-chip bottom by the weldering projection fills (underfill) material, makes this flip-chip directly be revealed in the external world and dispels the heat; Another form is additionally to connect to put a fin on substrate, this fin has a par usually and is located at support portion on every side, this par, this fin is supportted on substrate by this support portion frame, and make this par contact flip-chip, and the part par of this fin is exposed outside the packing colloid of coating chip, the heat that produces during the operation of loss flip-chip.
In the above-mentioned existing upside-down mounting semiconductor package part, because only by directly exposing outside chip or borrowing the heat of exposed parts fin loss chip, therefore there is the not good problem of thermal diffusivity, moreover after fin is bonded in substrate and chip, insert when carrying out the molding operation (Molding) of packing colloid in the die cavity of encapsulating mould, the necessary contact of the end face of fin is avoided forming excessive glue (Flash) at the end face of fin to the roof of die cavity, causes the inconvenience of processing procedure.
So United States Patent (USP) case the 6th, 444, No. 498, No. 6458626 patent discloses a kind of semiconductor package part with radiator structure, mainly be fin to be connect place on the chip, encapsulate by the packing colloid one again, make fin completely manifest packing colloid, make the structure of flip-chip type semiconductor packaging part integral body more firm and improved radiating effect.
Yet along with reaching its maturity of flip-chip type semiconductor packaging part process technique, chip as central processing unit generation high heat such as (CPU) adopts flip-chip more now, as United States Patent (USP) case the 6th, 444,498,6,458, simple technology with the fin natural heat dissipation shown in the patent such as No. 626 is real impracticable, so United States Patent (USP) case the 5th, 880, No. 524 patents disclose a kind of in packaging part the structure of integrated heat conducting pipe lid (Heat pipe lid), dispel the heat at flip-chip semiconductor package, see also Fig. 1, the semiconductor package part 1 of its announcement comprises: substrate 11, flip-chip connects to be put at the chip 10 of this substrate and connects the lid of putting on this substrate and chip 12, this lid 12 has first accommodation space, 121 ccontaining chips 10, and on this first accommodation space 121, be provided with second accommodation space 122, be installed with the heat pipe 120 of a filling cooling fluid, and first accommodation space, 121 end faces 1211 that make this lid 12 are heat conduction layers 14 and sticking putting on this chip 10 at interval, also connect on this lid 12 and put a radiator 13, absorb the heat of cooling fluid in the heat pipe 120 and be emitted in the air.
Though the lid of above-mentioned integrated heat conducting pipe has better radiating effect than fin, yet, therefore be easy to generate the problem of less reliable such as peeling off because this lid with heat pipe is to add to be bonded on substrate and the chip.Moreover the lid of this integrated heat conducting pipe only is and the contact-making surface of chip still to dislike not enough for the area of dissipation of semiconductor package part.
In addition, the semiconductor package part of the integrated heat conducting pipe of the 6th, 525, No. 420 patents announcements of United States Patent (USP) case also has identical shortcoming.
Therefore, how to improve above-mentioned existing semiconductor package part chips heat dissipation problem, in fact the problem that needs to be resolved hurrily for industry.
Summary of the invention
For overcoming the shortcoming of above-mentioned prior art, a purpose of the present invention is to provide a kind of semiconductor package part and method for making thereof with heat abstractor, makes semiconductor package part have high-cooling property.
Another object of the present invention provides a kind of semiconductor package part and method for making thereof with heat abstractor, and heat abstractor effectively is embedded in the semiconductor package part, promotes the global reliability and the thermal diffusivity of semiconductor package part.
Another object of the present invention provides a kind of semiconductor package part and method for making thereof with heat abstractor, can external thermocirculator, promote heat dissipation.
Take off purpose on reaching, the invention provides a kind of method for making with semiconductor package part of heat abstractor, this method for making with semiconductor package part of heat abstractor comprises: will act on chip and connect and place substrate; Heat abstractor connect place this effect chip, this heat sink interior is provided with accommodation space, and first opening and second opening that are communicated with this accommodation space, and this heat abstractor is provided with an interface layer at end face; Carry out packaging operation, the packing colloid of formation lid covers this effect chip, this heat abstractor and is positioned at interface layer on this heat abstractor; Carry out cutting operation, the non-electrical function part behind the encapsulation procedure is finished in removal, and makes this first opening and second opening expose outside this packing colloid; And remove the packing colloid that is positioned on this interface layer.
The invention still further relates to a kind of method for making with semiconductor package part of heat abstractor, this method for making with semiconductor package part of heat abstractor comprises: will act on chip and connect and place substrate; Heat abstractor is connect first opening and second opening that places this effect chip, this heat sink interior to be provided with accommodation space and be provided with this accommodation space of connection; Carry out packaging operation, form the packing colloid that lid covers this effect chip and this heat abstractor; And carry out cutting operation, remove and finish behind the encapsulation procedure non-electrical function part around the potted element, and make this first opening and second opening expose outside this packing colloid.
By above-mentioned method for making, also a kind of semiconductor package part of the present invention with heat abstractor, this semiconductor package part with heat abstractor comprises: substrate; The effect chip connects and places on this substrate; Connect the heat abstractor that places on this effect chip, this heat sink interior is provided with the accommodation space of ccontaining cooling fluid, and this heat abstractor is provided with first opening and second opening that is communicated with this accommodation space, and ccontaining cooling fluid absorption and loss should act on the heat that chip produces; And packing colloid, be formed between this heat abstractor and substrate, coat this effect chip.
The accommodation space of this heat sink interior can be the pipeline of medium altitude chamber or bended etc.
Semiconductor package part of the present invention also can be external to a heat exchange circulation system, be communicated with first opening and second opening in this heat abstractor respectively via circulation line, make cooling fluid after this heat exchange circulation system cooling, be back to this heat abstractor and strengthen radiating effect.
When this accommodation space is medium altitude chamber, can be with first or second opening sealing of this medium altitude chamber, then import cooling fluid by another opening, to be communicated with outside opening one end sealing again after making this medium altitude chamber be full of cooling fluid, and make to be equipped with cooling fluid in this heat abstractor and to act on chip and carry out heat exchange.
In addition before carrying out packaging operation, the end face of this heat abstractor is formed with an interface layer earlier, the caking property of this interface layer and packing colloid is greater than the caking property between this interface layer and heat abstractor, and the caking property between this interface layer and heat abstractor is less than the caking property between this heat abstractor and this packing colloid.When encapsulation and after cutting operation finishes, carry out one and remove operation, remove this interface layer and be positioned at packing colloid on this interface layer, the end face of this heat abstractor is exposed.
In another embodiment, before carrying out packaging operation, the end face of this heat abstractor is formed with an interface layer earlier, and the caking property between this interface layer and this packing colloid is the caking property less than this heat abstractor and this interface layer, and the material of this interface layer is the metal with high-termal conductivity.When encapsulation and after cutting operation finishes, carry out an operation of removing, remove the packing colloid that is positioned on this interface layer, make this interface layer keep being laid in end face of this heat abstractor, strengthen heat-conducting effect.
Semiconductor package part and method for making thereof with heat abstractor of the present invention is an effect chip electrically to be connect place a substrate, on this effect chip, connect again and put a heat abstractor, this heat sink interior is provided with accommodation space, and first opening and second opening that are communicated with this accommodation space, then encapsulate molding operation, make heat abstractor by with the bonding of packing colloid, firmly connect and place on this effect chip and the packing colloid, and behind cutting operation, first and second opening of this accommodation space is exposed, be communicated with a heat exchange circulation system by circulation line, or in this accommodation space filling cooling fluid and seal this first and second opening, have the advantage of elasticity collocation.In addition, heat abstractor in the semiconductor package part with heat abstractor of the present invention intactly connects and places on this effect chip and the packing colloid, have maximum heat transfer area, improved existing heat pipe and problems such as the not good and heat energy dissipation of reliability is untimely such as peeled off because of being added on the substrate generation outward.
The semiconductor package part that semiconductor package part with heat abstractor of the present invention and method for making thereof are produced has high-cooling property, simultaneously owing to effectively be entrenched in heat abstractor in the semiconductor package part, promote semiconductor package part whole reliability and thermal diffusivity, external thermocirculator effectively promotes radiating efficiency.
Description of drawings
Fig. 1 is a United States Patent (USP) the 5th, 880, the structural representation of integrated heat conducting pipe lid in No. 524 packaging parts;
Fig. 2 A to Fig. 2 F is the schematic diagram of the method for making embodiment 1 of the semiconductor package part with heat abstractor of the present invention;
Fig. 2 G is the arrange in pairs or groups schematic diagram of a heat exchange circulation system of the semiconductor package part with heat abstractor of the present invention:
Fig. 3 is the schematic diagram with semiconductor package part embodiment 1 of heat abstractor of the present invention;
Fig. 4 is the schematic diagram with semiconductor package part embodiment 2 of heat abstractor of the present invention;
Fig. 5 A is that the semiconductor package part heat abstractor with heat abstractor of the present invention is the schematic diagram of a medium altitude chamber;
Fig. 5 B is the arrange in pairs or groups schematic diagram of a radiating block embodiment 3 of the semiconductor package part with heat abstractor of the present invention;
Fig. 6 is the schematic diagram with semiconductor package part embodiment 4 of heat abstractor of the present invention;
Fig. 7 is the schematic diagram with semiconductor package part embodiment 5 of heat abstractor of the present invention.
Embodiment
See also Fig. 2 A to Fig. 2 F, it is the schematic diagram of the method for making embodiment 1 of the semiconductor package part with heat abstractor of the present invention.
Shown in Fig. 2 A, at first, to act on chip 21 connects and places substrate 20, this effect chip 21 has relative acting surface 210 and non-acting surface 211, this acting surface 210 is provided with the conductive projection 212 of rectangular arrangement, utilizes flip chip that these conductive projections are welded and be electrically connected at this substrate 20.Also can fill flip-chip bottom filler 22 (Underfill) to strengthen set at this effect chip 21 and 20 of this substrates in addition.
Shown in Fig. 2 B, borrow heat-conducting glue (not marking) to connect the non-acting surface 211 that places this effect chip 21 contact-making surface 231 of a heat abstractor 23, and the end face of this heat abstractor 23 has an interface layer 29, this interface layer 29 can for example be to be the film (P.I.tape) of ground with polyimides (Polyimide), or with metal (as copper, aluminium) be the metal patch of ground, or with organic material of high-fire resistance (as FR4, BT) be the paster of ground, also or with the high-fire resistance paper wood is the paper paster of ground, wherein, caking property between this interface layer 29 and the follow-up packing colloid that is used for coating effect chip 21 needs the caking property greater than 29 of heat abstractor 23 and this interface layers, and makes caking property between this interface layer 29 and the heat abstractor 23 less than the caking property between this heat abstractor 23 and packing colloid.In addition, the planar dimension of this heat abstractor 23 must the complete planar dimension of containing the semiconductor package part that will make, and promptly the scope that contains as the planar dimension of this heat abstractor 23 in the accompanying drawing (shown in dotted line 239,239 ') is greater than the follow-up planar dimension of being scheduled to the semiconductor package part finished (shown in dotted line 203,203 ').
Cooperate and consult shown in Fig. 2 C, these heat abstractor 23 inside are provided with accommodation space 230, and first opening 232 and second opening 233 that are communicated with this accommodation space 230.This accommodation space 230 is the pipelines that are warpage, and this first opening 232 and second opening 233 can be communicated with the diagonal position of this accommodation space 230 respectively.
Shown in Fig. 2 D, the structure that is combined with interface layer 29, heat abstractor 23, effect chip 21 and substrate 20 is inserted in the die cavity (not marking) of encapsulating mould, carry out packaging operation, make a packing colloid 24 lid cover this effect chip 21, heat abstractor 23 and be positioned at interface layer 29 on the heat abstractor 23.
Shown in Fig. 2 E figure, carry out cutting operation along the predetermined semiconductor package part planar dimension that forms (shown in dotted line 203,203 '), the non-electrical function part behind the encapsulation procedure is finished in removal, and make this first opening 232 and second opening 233 expose outside this packing colloid 24, form packaging part semi-finished product.
Shown in Fig. 2 F, half-finished interface layer 29 of packaging part after the cutting and the packing colloid 24 that residues on this interface layer 29 are removed.The caking property of utilizing 29 of this heat abstractor 23 and interface layers is less than this interface layer 29 and be covered in the close-burning characteristic of 24 of packing colloids on the interface layer 29, makes this interface layer 29 break away from heat abstractor 23 when divesting residual packing colloid 24 on it thereupon; Simultaneously, because the caking property that heat abstractor 23 and packing colloid are 24 is also greater than the caking property of 23 of interface layer 29 and heat abstractors, so with this interface layer 29 when heat abstractor 23 is removed, can not influence the bonding of 24 of heat abstractor 23 and packing colloids, make this heat abstractor 23 can expose outside this packing colloid 24, strengthen radiating effect and the semiconductor package part outward appearance guaranteeing to make good.
See also Fig. 2 G, this first opening 232 and second opening 233 that exposes outside packing colloid 24 can be communicated to a heat exchange circulation system 31 by circulation line 3, and cooling fluid can be back to this heat abstractor 23 after cooling, strengthen radiating effect.
See also Fig. 3, by above-mentioned method for making, the present invention also provides a kind of semiconductor package part with heat abstractor, and this semiconductor package part with heat abstractor comprises: substrate 20; Effect chip 21 connects and places this substrate 20; Connect the heat abstractor 23 that places on this effect chip 21, these heat abstractor 23 inside are provided with accommodation space 230, and this heat abstractor 23 is provided with first opening 232 and second opening 233 that is communicated with this accommodation space 230, and ccontaining cooling fluid is strengthened absorption and loss and should be acted on the heat that chip 21 produces; And packing colloid 24, be formed at 20 of this heat abstractor 23 and substrates, be used to coat this effect chip 21.
Embodiment 2
See also Fig. 4, it is the schematic diagram with semiconductor package part embodiment 2 of heat abstractor of the present invention.
Semiconductor package part embodiment with heat abstractor 2 of the present invention is roughly the same with embodiment 1, and main difference is to have omitted the process that interface layer is set in the processing procedure, directly encapsulates, and makes the end face of heat abstractor 23 be coated with one deck packing colloid 24.
The accommodation space 230 of this heat abstractor 23 is to be many pipelines of warpage back and forth in the present embodiment, follow-up can an external heat exchange circulation system, cooling fluid can be back to this heat abstractor 23 after cooling, strengthen radiating effect.Therefore the end face of heat abstractor 23 no doubt exposes and can promote radiating efficiency, can simplify processing procedure yet omitted the process of pasting interface layer.
Embodiment 3
See also Fig. 5 A, it is the heat abstractor schematic diagram that the semiconductor package part embodiment 3 with heat abstractor of the present invention uses.
Embodiments of the invention 3 are roughly the same with embodiment 1, main difference is to be that the accommodation space 230 of this heat abstractor 23 is medium altitude chambers, this hollow is ccontaining still to have first opening 232 and second opening 233, with this first opening 232 or 233 one of them the opening sealing of second opening, and by another opening importing cooling fluid, to be communicated in outside openend sealing again, make ccontaining cooling fluid in this heat abstractor 23, can carry out heat exchange with the effect chip.
Also see also Fig. 5 B, the present embodiment radiating block 4 with radiating fin 41 of also can arranging in pairs or groups connects the end face of putting at this heat abstractor 23, the heat of dissipation heat abstractor 23 absorption.
Embodiment 4
See also Fig. 6, it is the schematic diagram with semiconductor package part embodiment 4 of heat abstractor of the present invention.
Embodiments of the invention 4 can be by embodiment 1 first, embodiment 2 or embodiment 3 changes, its main difference is to be: this effect chip 21 is to electrically connect this substrate 20 to set the bonding wire mode, this heat abstractor 23 has a protuberance 234, connects to put the part that this no bonding wire of effect chip 21 central authorities connects.
Embodiment 5
See also Fig. 7, it is the schematic diagram with semiconductor package part embodiment 5 of heat abstractor of the present invention.
Embodiments of the invention 5 can be changed by embodiment 1, embodiment 3 or embodiment 4, its main difference is to be that the caking property of interface layer used in the processing procedure 29 and this packing colloid 24 is less than the caking property of this heat abstractor 23 with this packing colloid 24, so the packing colloid 24 that is formed on this interface layer 29 partly can be removed easily, and in the removal process, can not cause the delamination of 24 of the damage of semiconductor package part and this heat abstractor 23 and packing colloids.
The used interface layer 29 of present embodiment is Gold plated Layer, certainly, also can be materials such as metals such as chromium plating, nickel or its alloy or Teflon, as long as the caking property that this interface layer 29 and packing colloid are 24 is less than the caking property of heat abstractor 23 with packing colloid 24, make heat abstractor 23 after removing unnecessary potting compound, form the high metal level of one deck thermal conductivity at end face, strengthen radiating effect, effect is particularly remarkable when the accommodation space 230 of this heat abstractor 23 is a medium altitude chamber.
Therefore, semiconductor package part and method for making thereof with heat abstractor of the present invention is an effect chip electrically to be connect put a substrate, on this effect chip, connect again and put a heat abstractor, this heat sink interior is provided with accommodation space, and first opening and second opening that are communicated with this accommodation space, then encapsulate molding operation, make heat abstractor can by with the bonding of packing colloid, firmly connect and place on this effect chip and the packing colloid, and behind the cutting operation, first and second opening of this accommodation space is exposed, be communicated with a heat exchange circulation system by circulation line, or in this accommodation space filling cooling fluid and seal this first and second opening, have the advantage of elasticity collocation.In addition, semiconductor package part with heat abstractor of the present invention, heat abstractor intactly connects and places on this effect chip and the packing colloid, has maximum heat transfer area, has improved existing heat pipe and problems such as the not good and heat dissipation of reliability is untimely such as has peeled off because of being added on the substrate generation outward.
Claims (19)
1. the semiconductor package part with heat abstractor is characterized in that, this semiconductor package part with heat abstractor comprises:
Substrate;
The effect chip connects and places on this substrate;
Connect the heat abstractor that places on this effect chip, this heat sink interior is provided with the accommodation space of ccontaining cooling fluid, and this heat abstractor is provided with first opening and second opening that is communicated with this accommodation space, and ccontaining cooling fluid absorption and loss should act on the heat that chip produces; And
Packing colloid is formed between this heat abstractor and substrate, coats this effect chip.
2. the semiconductor package part with heat abstractor as claimed in claim 1 is characterized in that, the end face that this semiconductor package part with heat abstractor also is included in this heat abstractor forms an interface layer.
3. the semiconductor package part with heat abstractor as claimed in claim 2 is characterized in that the caking property between interface layer and packing colloid is less than the caking property of heat abstractor and packing colloid.
4. the semiconductor package part with heat abstractor as claimed in claim 1 is characterized in that, this accommodation space is medium altitude chamber or is the bended pipeline.
5. the semiconductor package part with heat abstractor as claimed in claim 4, it is characterized in that, this heat abstractor end face with medium altitude chamber exposes outside this packing colloid, and first opening and second opening of this medium altitude chamber are sealing, make cooling fluid and this effect chip of this heat abstractor in ccontaining carry out heat exchange.
6. the semiconductor package part with heat abstractor as claimed in claim 4 is characterized in that, this heat abstractor end face with bended pipeline is to expose outside this packing colloid or covered by this packing colloid.
7. the semiconductor package part with heat abstractor as claimed in claim 1 is characterized in that, the circulation line of this first opening and second open communication, one heat exchange circulation system, and cooling fluid can be back to this heat abstractor dissipation heat after cooling.
8. the semiconductor package part with heat abstractor as claimed in claim 1, it is characterized in that, this effect chip is to be electrically connected to this substrate with flip-chip or wherein a kind of mode of bonding wire, and when should the acting core sheet electrically connecting this substrate in the bonding wire mode, this heat abstractor has a protuberance and connects the part of putting in this no bonding wire connection of effect chip central authorities.
9. the method for making with semiconductor package part of heat abstractor is characterized in that, this method for making with semiconductor package part of heat abstractor comprises:
To act on chip connects and places substrate;
Heat abstractor connect place this effect chip, this heat sink interior is provided with accommodation space, and first opening and second opening that are communicated with this accommodation space, and this heat abstractor is provided with an interface layer at end face;
Carry out packaging operation, the packing colloid of formation lid covers this effect chip, this heat abstractor and is positioned at interface layer on this heat abstractor;
Carry out cutting operation, the non-electrical function part behind the encapsulation procedure is finished in removal, and makes this first opening and second opening expose outside this packing colloid; And
Remove the packing colloid that is positioned on this interface layer.
10. the method for making with semiconductor package part of heat abstractor as claimed in claim 9, it is characterized in that, the caking property of this interface layer and packing colloid is greater than the caking property between this interface layer and heat abstractor, and the caking property between this interface layer and heat abstractor is less than the caking property between this heat abstractor and this packing colloid, when removing the packing colloid that is positioned on this interface layer, in the lump this interface layer is removed.
11. the method for making with semiconductor package part of heat abstractor as claimed in claim 10, it is characterized in that this interface layer is to be that organic material of the film (P.I.tape) of ground, metal patch that metal is ground, high-fire resistance is in the paster of ground or the paper paster that the high-fire resistance paper wood is ground with polyimides (Polyimide).
12. the method for making with semiconductor package part of heat abstractor as claimed in claim 9 is characterized in that the caking property of this interface layer and packing colloid is less than the caking property between this heat abstractor and packing colloid.
13. the method for making with semiconductor package part of heat abstractor as claimed in claim 9 is characterized in that, this accommodation space is a medium altitude chamber or is the bended pipeline.
14. the method for making with semiconductor package part of heat abstractor as claimed in claim 13, it is characterized in that, this method for making with semiconductor package part of heat abstractor also comprises first or second opening sealing with this medium altitude chamber, then import cooling fluid by another opening, to be communicated with outside openend sealing again, and make the ccontaining cooling fluid of this heat abstractor and this effect chip carry out heat exchange.
15. the method for making with semiconductor package part of heat abstractor as claimed in claim 9 is characterized in that, the circulation line of this first opening and second open communication, one heat exchange circulation system, and cooling fluid can be back to this heat abstractor dissipation heat after cooling.
16. the method for making with semiconductor package part of heat abstractor as claimed in claim 9, it is characterized in that, this effect chip is to be electrically connected to this substrate with flip-chip or bonding wire mode, and when should the acting core sheet electrically connecting this substrate in the bonding wire mode, this heat abstractor has a protuberance and connects the part of putting this no bonding wire connection of effect chip central authorities.
17. the method for making with semiconductor package part of heat abstractor is characterized in that, this method for making with semiconductor package part of heat abstractor comprises:
To act on chip connects and places substrate;
Heat abstractor is connect first opening and second opening that places this effect chip, this heat sink interior to be provided with accommodation space and be provided with this accommodation space of connection;
Carry out packaging operation, form the packing colloid that lid covers this effect chip and this heat abstractor; And
Carry out cutting operation, remove and to finish behind the encapsulation procedure non-electrical function part around the potted element, and make this first opening and second opening expose outside this packing colloid.
18. the method for making with semiconductor package part of heat abstractor as claimed in claim 17, it is characterized in that, this accommodation space is the pipeline that is bended, and connection one is provided with the circulation line of heat exchange circulation system, and cooling fluid can be back to this heat abstractor dissipation heat after cooling.
19. the method for making with semiconductor package part of heat abstractor as claimed in claim 17, it is characterized in that, this effect chip is to be electrically connected to this substrate with flip-chip or bonding wire mode, and when should the acting core sheet electrically connecting this substrate in the bonding wire mode, this heat abstractor has a protuberance and connects the part of putting this no bonding wire connection of effect chip central authorities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100585133A CN100468711C (en) | 2006-03-10 | 2006-03-10 | Semiconductor package with the heat radiation device and its making method |
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| CNB2006100585133A CN100468711C (en) | 2006-03-10 | 2006-03-10 | Semiconductor package with the heat radiation device and its making method |
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| CN101034690A true CN101034690A (en) | 2007-09-12 |
| CN100468711C CN100468711C (en) | 2009-03-11 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI501325B (en) * | 2013-05-20 | 2015-09-21 | Advanced Semiconductor Eng | Manufacturing method of electronic module |
| CN106941083A (en) * | 2015-09-23 | 2017-07-11 | 飞思卡尔半导体公司 | The encapsulation of encapsulating semiconductor device and its manufacture method with fin openings |
| CN113249692A (en) * | 2021-04-29 | 2021-08-13 | 林梅琴 | Cooling plate of high-power semiconductor component |
| CN113395870A (en) * | 2020-03-13 | 2021-09-14 | 兆勤科技股份有限公司 | Heat sink device |
-
2006
- 2006-03-10 CN CNB2006100585133A patent/CN100468711C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI501325B (en) * | 2013-05-20 | 2015-09-21 | Advanced Semiconductor Eng | Manufacturing method of electronic module |
| CN106941083A (en) * | 2015-09-23 | 2017-07-11 | 飞思卡尔半导体公司 | The encapsulation of encapsulating semiconductor device and its manufacture method with fin openings |
| CN106941083B (en) * | 2015-09-23 | 2021-08-06 | 恩智浦美国有限公司 | Encapsulated semiconductor device package with heat sink opening and method of making same |
| CN113395870A (en) * | 2020-03-13 | 2021-09-14 | 兆勤科技股份有限公司 | Heat sink device |
| CN113249692A (en) * | 2021-04-29 | 2021-08-13 | 林梅琴 | Cooling plate of high-power semiconductor component |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100468711C (en) | 2009-03-11 |
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