CN101026208B - Light-emitting diode and its preparing method - Google Patents
Light-emitting diode and its preparing method Download PDFInfo
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- CN101026208B CN101026208B CN2006100339891A CN200610033989A CN101026208B CN 101026208 B CN101026208 B CN 101026208B CN 2006100339891 A CN2006100339891 A CN 2006100339891A CN 200610033989 A CN200610033989 A CN 200610033989A CN 101026208 B CN101026208 B CN 101026208B
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000003822 epoxy resin Substances 0.000 claims abstract description 30
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 30
- 238000003466 welding Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000003292 glue Substances 0.000 claims abstract description 9
- 238000000465 moulding Methods 0.000 claims abstract description 4
- 241000218202 Coptis Species 0.000 claims description 70
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 70
- 239000000463 material Substances 0.000 claims description 25
- 229910000679 solder Inorganic materials 0.000 claims description 18
- 239000011241 protective layer Substances 0.000 claims description 14
- 230000001154 acute effect Effects 0.000 claims description 7
- 210000003127 knee Anatomy 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 13
- 239000000843 powder Substances 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000035939 shock Effects 0.000 description 4
- 239000002362 mulch Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- Led Device Packages (AREA)
Abstract
The invention relates to an LED and its manufacturing method, in which, the method includes the following steps in turn: dropping base glue, fixing a wafer, welding lines, coating fluorescent powder, filling glue to molding, latter process and light splitting; and the step for welding wire also includes: welding a gold wire and two electrodes of a frame and dropping a protection layer on the welding point of the gold wire and the two electrodes of the frame. The product includes a frame 1 and a cup 11 for loading the wafer 2 on the fame 1, and a gold wire 3 and a wafer fixing base glue 4 under the wafer 2, two ends of the gold wire 3 are soldered with the frame electrode and the wafer electrode, and the soldered place 31 of the gold wire 3 and the electrode of the frame 1 is covered by a protection layer 5. The protection layer 5 is a heat conductive and electric conductive medium mixed by a layer of silver powder and epoxy resin. Compared with the prior art, the LED of the invention has firm connection between the gold wire and the frame electrodes, the gold wire is not easy to fall off or pull apart, so that the LED has stable performance and long service life.
Description
Technical field the present invention relates to have at least the manufacture method that is applicable to photoemissive semiconductor device of a jump in potential potential barrier or surface potential barrier, particularly relates to Light-emitting Diode And Its Making Method.
All be welded with gold thread between the chip electrode of background technology light-emitting diode and the stent electrode; weld at gold thread and stent electrode; the prior art light-emitting diode all only adopt bonding equipment with gold thread 3 ' pressure welding on stent electrode 1 '; as shown in Figure 3; weld 31 ' at gold thread and electrode does not add any safeguard measure; can not guarantee that like this gold thread firmly is connected with stent electrode, dropping situations happens occasionally.Moreover; gold thread between prior art LED wafer 2 ' electrode and the stent electrode is not almost reserved the leeway that stretches; as shown in Figure 2; because the coefficient of expansion of support, wafer, colloid (epoxy resin) and gold thread is different; and light-emitting diode in use; Shi Changhui is in the environment of high temperature, and gold thread, is broken after repeatedly being pullled easily often being subjected to thermal shock like this.Also have, the solid brilliant primer 4 ' of prior art light-emitting diode is simple epoxy resin or other colloid, as Fig. 8 and shown in Figure 9, general white light emitting diode generally adopt the blue light wafer in addition sapphire be substrate, after the blue light wafer is luminous, can only excite wafer top and fluorescent material all around 6 ' to produce gold-tinted, and the light that penetrates from bottom of wafer very major part be depleted, luminous the failing of wafer is fully used.
The summary of the invention the technical problem to be solved in the present invention is to avoid above-mentioned the deficiencies in the prior art part and proposes a kind of Light-emitting Diode And Its Making Method, the gold thread and the stent electrode of the light-emitting diode of making by this method are connected firmly, and the cold-resistant thermal shock resistance properties of gold thread is good, is difficult for being broken.
The present invention solve the technical problem can be by realizing by the following technical solutions:
Propose a kind of manufacture method of light-emitting diode, comprise the steps:
1) some primer: coat an amount of epoxy resin primer at the bottom of cups point of rack bearing wafer;
2) solid brilliant: as wafer to be put on the primer of support bottom of cups,, just wafer is fixed on the support with described epoxy resin primer oven dry;
3) bonding wire: in the support cup of each light-emitting diode, with two gold threads respectively with the anode and the cathode weld of wafer and draw, again with the two electrodes welding of press welder with the other end and the support of each gold thread;
4) add and be coated with fluorescent material: the side of wafer and above add and being coated with the epoxy resin glue that is mixed with fluorescent material;
5) encapsulating moulding: use main component to pour into into the profile of light-emitting diode as the glue of epoxy resin;
6) back segment operation: the stent electrode of a plurality of light-emitting diodes is separated, obtain single light-emitting diode;
7) beam split: a plurality of light-emitting diodes are carried out photoelectric parameter testing and packing;
In the described step 3), also comprise step 3A): after the two electrodes welding of press welder with gold thread and support, protective layer on solder joint place's point of gold thread and support two electrodes, described protective layer are the heat-conductivity conducting medium that one deck silver powder mixes with epoxy resin.
In the described step 3), also comprise step 3B): gold thread is stretched vertically upward from the wafer solder joint earlier, a little more than the solder joint bending of top of the trellis place to gold thread and stent electrode, make gold thread finish with angle of cut α of stent electrode welding back formation in the knee be the camber line of acute angle.
Be mixed with fluorescent material in the described epoxy resin primer.
The present invention solve the technical problem also will be by realizing by the following technical solutions:
Design, use a kind of light-emitting diode; comprise the cup that is used for bearing wafer on support and the support; and the fixedly primer of gold thread and wafer below; weld with stent electrode and chip electrode respectively at the two ends of described gold thread; described wafer top and both sides are coated with fluorescent material; the weld of described gold thread and stent electrode is coated with protective layer, and described protective layer is the heat-conductivity conducting medium that one deck silver powder mixes with epoxy resin.
Described gold thread stretches vertically upward from the wafer solder joint, in a little more than top of the trellis place to the solder joint bending of stent electrode, form two camber lines that the tangent line angle of cut is an acute angle in the knee.
Described primer is the mixture of epoxy resin and fluorescent material.
Compare with prior art, the manufacture method of light-emitting diode of the present invention and the technique effect of product are: 1. at the solder joint place of gold thread and stent electrode protective mulch, guarantee to be connected firmly between gold thread and the stent electrode, stop the rosin joint phenomenon simultaneously; Protective layer be the heat-conductivity conducting medium that mixes with epoxy resin of one deck silver powder or with the gold goal of gold thread with material, increase the thermal conductivity at this solder joint place, avoided because of gold thread and the bad bad problem of thermal diffusivity that causes of stent electrode contact-making surface; The electric conductivity of silver powder and gold goal is fine, can stablize by holding current; 2. gold thread is extended into two camber lines that the tangent line angle of cut is an acute angle, reduce the stress of gold thread when expanding with heat and contract with cold, strengthen the ability of the cold-resistant thermal shock of gold thread, prevent the possibility that gold thread is broken effectively in the knee; 3. mixed fluorescent powder in the primer of fixed wafer makes full use of the light that penetrates from the wafer bottom surface, strengthens the brightness of light-emitting diode.
Description of drawings
Fig. 1 is the process chart of LED production method;
Fig. 2 is that prior art light-emitting diode gold thread and chip electrode and the welded master of stent electrode look cross-sectional schematic;
Fig. 3 is the schematic top plan view of prior art light-emitting diode gold thread and stent electrode weld;
Fig. 4 is a LED wafer of the present invention 2 during for monolithic, and gold thread 3 is looked cross-sectional schematic with wafer 2 electrodes and the welded master of support 1 electrode;
Fig. 5 is a LED wafer of the present invention 2 during for monolithic, the schematic top plan view of gold thread 3 during with heat-conductivity conducting medium that support 1 electrode weld 31 protective mulches 5 mix with epoxy resin for silver powder;
Fig. 6 is a LED wafer of the present invention 2 during for monolithic, and gold thread 3 and support 1 electrode weld 31 protective mulches 5 are the schematic top plan view during with the gold goal of material with gold thread;
Fig. 7 is that the master of LED wafer of the present invention 2 during for monolithic looks cross-sectional schematic;
Fig. 8 is the wafer fixing structure schematic diagram of prior art light-emitting diode;
Fig. 9 is the fiber-loss schematic diagram that prior art LED wafer bottom is penetrated;
Figure 10 is the wafer 2 fixed structure schematic diagrames of LED wafer of the present invention 2 during for monolithic;
Figure 11 is the blue-light excited schematic diagram that is mixed with the primer 4 generation gold-tinteds of fluorescent material that LED wafer of the present invention 2 bottoms are penetrated;
Figure 12 is the schematic diagram that light-emitting diode of the present invention strengthens luminosity;
Figure 13 is a LED wafer 2 of the present invention when being three, and each gold thread 3 is looked cross-sectional schematic with each wafer 2 electrode and the welded master of support 1 electrode;
Figure 14 is a LED wafer 2 of the present invention when being three, the schematic top plan view of each gold thread 3 during with heat-conductivity conducting medium that the protective layer 5 that support 1 electrode weld 31 covers mixes with epoxy resin for silver powder;
Figure 15 is a LED wafer 2 of the present invention when being three, and the protective layer 5 that each gold thread 3 and support 1 electrode weld cover is the schematic top plan view during with the gold goal of material with gold thread;
Figure 16 is that the master of LED wafer 2 of the present invention when being three looks cross-sectional schematic.
Embodiment is described in further detail below in conjunction with the most preferred embodiment shown in the accompanying drawing.
The manufacture method of the present invention's light-emitting diode as shown in Figure 1, comprises the steps:
1) some primer: coat an amount of epoxy resin primer 4 in cup 11 base point of support 1 bearing wafer 2;
2) solid brilliant: as wafer 2 to be put on the primer 4 of support bottom of cups,, just wafer is fixed on the support with described epoxy resin primer oven dry;
3) bonding wire: in the support cup 11 of each light-emitting diode, with two gold threads 3 respectively with the anode and the cathode weld of wafer 2 and draw, again with the two electrodes welding of press welder with the other end and the support 1 of each gold thread 3;
4) add and be coated with fluorescent material: the side of wafer 2 and above add and being coated with the epoxy resin glue that is mixed with fluorescent material 6, as shown in Figure 7;
5) encapsulating moulding: the profile of using main component to pour into into light-emitting diode as the glue of epoxy resin is curing agent, for example phthalic anhydride with the acid anhydrides;
6) back segment operation: the stent electrode of a plurality of light-emitting diodes is separated, obtain single light-emitting diode;
7) beam split: a plurality of light-emitting diodes are carried out photoelectric parameter testing and packing;
In the described step 3); also comprise step 3A): after the two electrodes welding of press welder with gold thread 3 and support 1; burn-on at the solder joint place 31 of gold thread and 1 liang of electrode of support or put protective layer 5; as shown in Figure 5 and Figure 6; guarantee like this to be connected firmly between gold thread and the stent electrode; stop the rosin joint phenomenon simultaneously, and guarantee that thermal diffusivity and electric conductivity between gold thread and the stent electrode are good.
As shown in Figure 5, described protective layer 5 is the heat-conductivity conducting medium that one deck silver powder mixes with epoxy resin.
As shown in Figure 6, described protective layer is for adding the gold goal of weldering at the solder joint place of described gold thread and support two electrodes.
In the described step 3), also comprise step 3B): gold thread is stretched vertically upward from the wafer solder joint earlier, a little more than the solder joint bending of top of the trellis place to gold thread and stent electrode, to form the angle of cut α in the knee with stent electrode welding back be the camber line of acute angle finishing to make gold thread, as shown in Figure 4, reduce the stress of gold thread when expanding with heat and contract with cold like this, strengthen the ability of the cold-resistant thermal shock of gold thread, prevent the possibility that gold thread is broken effectively.
Among the present invention, when making white light emitting diode, as shown in figure 10, be mixed with fluorescent material in the described epoxy resin primer 4, this fluorescent material is YAG (yttrium-aluminium-garnet), as shown in figure 11, blue light wafer 2 excites the stronger gold-tinted of fluorescent material generation in the primer 4, rely on the smooth surface of support cup 11 to reflect back, fluorescent material around reaching above wafer 2 excites the stronger combination of light sources of generation, form powerful light source, thereby form the light-emitting diode that quality is stablized, is higher than common processing procedure light-emitting diode 30% brightness at least.
Among the present invention, the interior wafer 2 of light-emitting diode can be monolithic, also can be two or multi-disc, Figure 13 to Figure 16 illustrates the light-emitting diode of placing three wafer in the support cup 11, its manufacture craft flow process is the same substantially with single-wafer, must respectively each wafer and stent electrode be welded by gold thread when slightly difference is bonding wire, just repeat no more herein.
The present invention's light-emitting diode product; as shown in Figure 7; comprise the cup 11 that is used for bearing wafer 2 on support 1 and the support 1; and the fixedly primer 4 of gold thread 3 and wafer 2 belows; weld with stent electrode and chip electrode respectively at the two ends of described gold thread 3; described wafer 2 tops and both sides are coated with fluorescent material 6, the weld 31 pressurization matcoveredns 5 of described gold thread 3 and support 1 electrode.
As shown in Figure 5 and Figure 6, described protective layer 5 be the heat-conductivity conducting medium that mixes with epoxy resin of one deck silver powder or with the gold goal of gold thread with material.
As shown in Figure 4, described gold thread 3 stretches vertically upward from wafer 2 solder joints, in a little more than support 1 top place to the solder joint bending of stent electrode, forming an angle of cut α in the knee is the camber line of acute angle.
Extremely shown in Figure 12 as Figure 10, described primer 4 is the mixture of epoxy resin and fluorescent material, as shown in figure 11, blue light wafer 2 excites the stronger gold-tinted of fluorescent material generation in the primer 4, rely on the smooth surface of support cup 11 to reflect back, the fluorescent material that reaches both sides above wafer 2 excites the stronger combination of light sources of generation, forms powerful light source, thereby forms the light-emitting diode that quality is stablized, is higher than common processing procedure light-emitting diode 30% brightness at least.
Among the present invention, the interior wafer 2 of light-emitting diode can be monolithic, also can be two or multi-disc, Figure 13 to Figure 16 illustrates the light-emitting diode of placing three wafer in the support cup 11, its manufacture craft flow process is the same substantially with single-wafer, must respectively each wafer and stent electrode be welded by gold thread when slightly difference is bonding wire, just repeat no more herein.
Claims (7)
1. the manufacture method of a light-emitting diode comprises the steps:
1) some primer: coat an amount of epoxy resin primer at the bottom of cups point of rack bearing wafer;
2) solid brilliant: as wafer to be put on the primer of support bottom of cups,, just wafer is fixed on the support with described epoxy resin primer oven dry;
3) bonding wire: in the support cup of each light-emitting diode, with two gold threads respectively with the anode and the cathode weld of wafer and draw, again with the two electrodes welding of press welder with the other end and the support of each gold thread;
4) add and be coated with fluorescent material: the side of wafer and above add and being coated with the epoxy resin glue that is mixed with fluorescent material;
5) encapsulating moulding: use main component to pour into into the profile of light-emitting diode as the glue of epoxy resin;
6) back segment operation: the stent electrode of a plurality of light-emitting diodes is separated, obtain single light-emitting diode;
7) beam split: a plurality of light-emitting diodes are carried out photoelectric parameter testing and packing;
It is characterized in that: in the described step 3); also comprise step 3A): after the two electrodes welding of press welder with gold thread and support; protective layer on solder joint place's point of gold thread and support two electrodes, described protective layer are the heat-conductivity conducting medium that one deck silver powder mixes with epoxy resin.
2. the manufacture method of light-emitting diode as claimed in claim 1, it is characterized in that: in the described step 3), also comprise step 3B): gold thread is stretched vertically upward from the wafer solder joint earlier, a little more than the solder joint bending to gold thread and stent electrode of top of the trellis place, the angle of cut α that makes it to be formed on the knee is an acute angle.
3. the manufacture method of light-emitting diode as claimed in claim 1 is characterized in that: be mixed with fluorescent material in the described epoxy resin primer.
4. the manufacture method of light-emitting diode as claimed in claim 1 is characterized in that: described wafer is a slice or at least two.
5. light-emitting diode; comprise the cup (11) that is used for bearing wafer (2) on support (1) and the support (1); and the solid brilliant primer (4) of gold thread (3) and wafer (2) below; weld with stent electrode and chip electrode respectively at the two ends of described gold thread (3); it is characterized in that: matcoveredn (5) on weld (31) point of described gold thread (3) and support (1) electrode, described protective layer (5) is the heat-conductivity conducting medium that one deck silver powder mixes with epoxy resin.
6. light-emitting diode as claimed in claim 5 is characterized in that: described gold thread (3) stretches vertically upward from the wafer solder joint, and a little more than the solder joint bending to gold thread and stent electrode of top of the trellis place, the angle of cut α that is formed on the knee is an acute angle.
7. light-emitting diode as claimed in claim 6 is characterized in that: described primer (4) is the mixture of epoxy resin and fluorescent material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100339891A CN101026208B (en) | 2006-02-24 | 2006-02-24 | Light-emitting diode and its preparing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100339891A CN101026208B (en) | 2006-02-24 | 2006-02-24 | Light-emitting diode and its preparing method |
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| CN101026208A CN101026208A (en) | 2007-08-29 |
| CN101026208B true CN101026208B (en) | 2011-05-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489737A (en) * | 2015-12-25 | 2016-04-13 | 中山市聚明星电子有限公司 | Omnidirectional light emitting diode and preparation method therefor |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102447042A (en) * | 2010-10-15 | 2012-05-09 | 展晶科技(深圳)有限公司 | LED (Light Emitting Diode) package structure and process |
| CN102130280A (en) * | 2010-12-31 | 2011-07-20 | 浙江名芯半导体科技有限公司 | LED (Light Emitting Diode) package solder joint structure and process |
| CN103545435A (en) * | 2012-07-10 | 2014-01-29 | 深圳市斯迈得光电子有限公司 | High-reliability weld wire device applied to SMD (surface mount device) light-emitting diode |
| CN103887408A (en) * | 2014-03-29 | 2014-06-25 | 中山市聚明星电子有限公司 | Manufacturing technology of LED white light |
| CN105914132B (en) * | 2016-03-14 | 2018-11-16 | 王志敏 | A kind of photoresist coating process of stamp-mounting-paper diode |
| CN110010743A (en) * | 2019-04-29 | 2019-07-12 | 广东深莱特科技股份有限公司 | A kind of New LED structure and preparation method thereof |
| CN110416391A (en) * | 2019-08-28 | 2019-11-05 | 开发晶照明（厦门）有限公司 | LED packaging element |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6117705A (en) * | 1997-04-18 | 2000-09-12 | Amkor Technology, Inc. | Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate |
| CN1437200A (en) * | 2003-01-14 | 2003-08-20 | 中山大学 | Low-content nanometer conducting silver paste and its prepn |
| CN2586251Y (en) * | 2002-12-04 | 2003-11-12 | 银河光电股份有限公司 | Packing structure of white light LED |
-
2006
- 2006-02-24 CN CN2006100339891A patent/CN101026208B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6117705A (en) * | 1997-04-18 | 2000-09-12 | Amkor Technology, Inc. | Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate |
| CN2586251Y (en) * | 2002-12-04 | 2003-11-12 | 银河光电股份有限公司 | Packing structure of white light LED |
| CN1437200A (en) * | 2003-01-14 | 2003-08-20 | 中山大学 | Low-content nanometer conducting silver paste and its prepn |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489737A (en) * | 2015-12-25 | 2016-04-13 | 中山市聚明星电子有限公司 | Omnidirectional light emitting diode and preparation method therefor |
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| CN101026208A (en) | 2007-08-29 |
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