CN105489737A - Omnidirectional light emitting diode and preparation method therefor - Google Patents
Omnidirectional light emitting diode and preparation method therefor Download PDFInfo
- Publication number
- CN105489737A CN105489737A CN201511003489.9A CN201511003489A CN105489737A CN 105489737 A CN105489737 A CN 105489737A CN 201511003489 A CN201511003489 A CN 201511003489A CN 105489737 A CN105489737 A CN 105489737A
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- CN
- China
- Prior art keywords
- emitting diode
- diffusion layer
- full angle
- led chip
- angle light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
The invention discloses an omnidirectional light emitting diode and a preparation method therefor. The omnidirectional light emitting diode comprises a bracket, an LED chip mounted on the bracket and a phosphor powder layer covering the LED chip, wherein a mounting platform is arranged on the upper end plane of the bracket; the LED chip is mounted on the mounting platform; the exteriors of the mounting platform and the LED chip are coated with a first light-scattering layer and a second light-scattering layer in sequence; and the first light-scattering layer is a light-transmitting layer mixed with phosphor granules. The omnidirectional light emitting diode can emit lights within 360 degrees; the illumination intensity of each light emitting surface is uniform without dazzle lights; and the installation of the omnidirectional light emitting diode is not affected by the light emitting angles, so that the use range of the omnidirectional light emitting diode is expanded.
Description
Technical field
The present invention relates to a kind of lighting field, be specifically related to a kind of full angle light-emitting diode and preparation method thereof.
Background technology
LED has the features such as energy-saving and environmental protection, the life-span is long, volume is little, is widely used in the fields such as various instruction, display, decoration, backlight, general lighting and urban landscape.The light-emitting diode of prior art comprises support, LED chip and epoxy resin protective layer; support has mounting groove; LED chip is installed in mounting groove; pass through epoxy encapsulation again; make the lighting angle of existing light-emitting diode have limitation, can only could embody illumination from certain face or point, irradiate coverage rate limited; the intensity of illumination of light-emitting area is uneven, and lighting effect is poor.In order to improve lighting effect, application publication number is the light-emitting diode (LED) module that the Chinese invention patent of CN102444799A discloses tool fluorescence coating, by being formed with fluorescence coating on the led chips, fluorescence coating is utilized to excite specific visible ray, improve lighting effect and light efficiency, but the problem of lumination of light emitting diode angle limitation can not be solved.Therefore, the shortcoming existed in prior art, is necessary to make improvement to prior art.
Summary of the invention
The object of the invention is to overcome shortcoming of the prior art with not enough, a kind of full angle light-emitting diode that can improve lighting angle and lighting effect is provided.
Another object of the present invention is the preparation method providing a kind of full angle light-emitting diode.
The present invention is realized by following technical scheme:
A kind of full angle light-emitting diode, the phosphor powder layer comprising support, be installed on the LED chip on support and cover on LED chip, the upper surface of described support has mounting platform, described LED chip is installed on described mounting platform, described mounting platform and LED chip are enclosed with the first diffusion layer and the second diffusion layer outward successively, and described first diffusion layer is the photic zone being mixed with fluorescent powder grain.
Further, the outer surface of described first diffusion layer is evenly equipped with arc convex.
Further, the material of described first diffusion layer is epoxy resin or silica column.
Further, described second diffusion layer is the photic zone being mixed with fluorescent powder grain.
Further, the material of described second diffusion layer is epoxy resin or silica column.
Further, described second diffusion layer is also enclosed with light transmission protective layer outward.
Further, described light transmission protective layer is epoxy resin.
Further, the shape of described second diffusion layer is spheroidal.
Further, described support comprises the first support and the second support, described first support comprises the first brace table and by first pin of the first brace table to downward-extension, described second support comprises the second brace table and by second pin of the second brace table to downward-extension, described mounting platform is located at the upper surface of described first brace table or the second brace table.
A preparation method for full angle light-emitting diode, comprises the following steps:
Step (1): LED chip is fixed on support, LED chip covers phosphor powder layer, obtains die bond semi-finished product;
Step (2): the semi-finished product of die bond and the glue being mixed with fluorescent powder grain are injected mould bar encapsulating shaping, obtain the full angle light-emitting diode semi-finished product with the first diffusion layer;
Step (3): the full angle light-emitting diode semi-finished product and glue with the first diffusion layer are injected mould bar encapsulating shaping, obtain the full angle finished product of LED with the second diffusion layer.
Relative to prior art, the present invention is by being wrapped with the first diffusion layer at mounting platform and LED chip, light is through having the first diffusion layer of fluorescent powder grain, make light produce refraction or reflection changes radiation direction, realize producing more light at the sidepiece of LED chip and bottom, reach 360 degree of illumination effects, improve illumination coverage rate, intensity of illumination is even, makes light efficiency soft, not dazzling.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of full angle light-emitting diode of the present invention.
In figure: 1.LED chip; 2. phosphor powder layer; 3. mounting platform; 4. the first diffusion layer; 5. the second diffusion layer; 6. light transmission protective layer; 7. the first brace table; 8. the second brace table; 9. the first pin; 10. the second pin.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
A kind of full angle light-emitting diode of the present invention as shown in Figure 1, the phosphor powder layer 2 comprising support, be installed on the LED chip 1 on support and cover on LED chip 1, the upper surface of support has mounting platform 3, LED chip 1 is installed on mounting platform 3, mounting platform 3 and LED chip 1 be outer is enclosed with the first diffusion layer 4 and the second diffusion layer 5, first diffusion layer 4 successively for being mixed with the photic zone of fluorescent powder grain.Because mounting platform 3 and LED chip 1 are by the fluorescent powder grain of the first diffusion layer 4 entirety parcel, light-emitting diode is made to realize 360 degree of luminescences.This mounting platform 3 is conducive to improving lighting angle, improves the global illumination intensity of light-emitting diode.Certainly, this full angle light-emitting diode also only can be provided with the first diffusion layer 4, as long as the thickness and the fluorescent powder grain quantity that improve the first diffusion layer 4 also can realize 360 degree of luminescences, but because the cost of fluorescent powder grain is high, adopt multilayer parcel more reduce production cost with being beneficial to and 360 degree of luminescences can be realized.And this phosphor powder layer 2 is for limiting the basic look of light-emitting diode, as white light, blue light, powder light, champagne light or warm white etc.
In order to improve dispersion effect, prevent dazzling, the outer surface of the first diffusion layer 4 is evenly equipped with arc convex.The material of the first diffusion layer 4 is epoxy resin or silica column.
Certainly, for improving lighting effect further, the second diffusion layer 5 can for being mixed with the photic zone of fluorescent powder grain.Second diffusion layer 5 is epoxy resin or silica column, and light, is conducive to improving lighting effect through scattering in the second diffusion layer 5.The shape of the second diffusion layer 5 is spheroidal.Certainly, also can adjust the shape of the second diffusion layer 5 as required, improve decorative effect.
Second diffusion layer 5 is outer is also enclosed with light transmission protective layer 6.This light transmission protective layer 6 is epoxy resin.This light transmission protective layer 6 is for the protection of the second diffusion layer 5.
Support comprises the first support and the second support, first support comprises the first brace table 7 and by first pin 9 of the first brace table 7 to downward-extension, second support comprises the second brace table 8 and by second pin 10 of the second brace table 8 to downward-extension, mounting platform 3 is located at the upper surface of the first brace table 7 or the second brace table 8.The support of prior art generally installs LED chip 1 by mounting groove, and this makes the limited size system of LED chip 1, and lighting angle limits by mounting groove, and mounting platform 3 can install the LED chip 1 of Multiple Type as required, highly versatile.
A preparation method for full angle light-emitting diode, comprises the following steps:
Step (1): LED chip 1 is fixed on support, LED chip 1 covers phosphor powder layer 2, obtains die bond semi-finished product;
Step (2): the semi-finished product of die bond and the glue being mixed with fluorescent powder grain are injected mould bar encapsulating shaping, obtain the full angle light-emitting diode semi-finished product with the first diffusion layer 4; This glue is epoxy resin or silica column.
Step (3): the full angle light-emitting diode semi-finished product and glue with the first diffusion layer 4 are injected mould bar encapsulating shaping, obtain the full angle finished product of LED with the second diffusion layer 5.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a full angle light-emitting diode, the phosphor powder layer comprising support, be installed on the LED chip on support and cover on LED chip, it is characterized in that: the upper surface of described support has mounting platform, described LED chip is installed on described mounting platform, described mounting platform and LED chip are enclosed with the first diffusion layer and the second diffusion layer outward successively, and described first diffusion layer is the photic zone being mixed with fluorescent powder grain.
2. full angle light-emitting diode according to claim 1, is characterized in that: the outer surface of described first diffusion layer is evenly equipped with arc convex.
3. full angle light-emitting diode according to claim 1 and 2, is characterized in that: the material of described first diffusion layer is epoxy resin or silica column.
4. full angle light-emitting diode according to claim 1, is characterized in that: described second diffusion layer is the photic zone being mixed with fluorescent powder grain.
5. the full angle light-emitting diode according to claim 1 or 4, is characterized in that: the material of described second diffusion layer is epoxy resin or silica column.
6. full angle light-emitting diode according to claim 1, is characterized in that: described second diffusion layer is also enclosed with light transmission protective layer outward.
7. full angle light-emitting diode according to claim 6, is characterized in that: described light transmission protective layer is epoxy resin.
8. full angle light-emitting diode according to claim 1, is characterized in that: the shape of described second diffusion layer is spheroidal.
9. full angle light-emitting diode according to claim 1, it is characterized in that: described support comprises the first support and the second support, described first support comprises the first brace table and by first pin of the first brace table to downward-extension, described second support comprises the second brace table and by second pin of the second brace table to downward-extension, described mounting platform is located at the upper surface of described first brace table or the second brace table.
10. a preparation method for full angle light-emitting diode, is characterized in that: comprise the following steps:
Step (1): LED chip is fixed on support, LED chip covers phosphor powder layer, obtains die bond semi-finished product;
Step (2): the semi-finished product of die bond and the glue being mixed with fluorescent powder grain are injected mould bar encapsulating shaping, obtain the full angle light-emitting diode semi-finished product with the first diffusion layer;
Step (3): the full angle light-emitting diode semi-finished product and glue with the first diffusion layer are injected mould bar encapsulating shaping, obtain the full angle finished product of LED with the second diffusion layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511003489.9A CN105489737A (en) | 2015-12-25 | 2015-12-25 | Omnidirectional light emitting diode and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511003489.9A CN105489737A (en) | 2015-12-25 | 2015-12-25 | Omnidirectional light emitting diode and preparation method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105489737A true CN105489737A (en) | 2016-04-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511003489.9A Pending CN105489737A (en) | 2015-12-25 | 2015-12-25 | Omnidirectional light emitting diode and preparation method therefor |
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| CN (1) | CN105489737A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108305932A (en) * | 2018-03-08 | 2018-07-20 | 北京大学东莞光电研究院 | A kind of specular removal white light LAMP-LED structures and packaging method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009004698A (en) * | 2007-06-25 | 2009-01-08 | Kyocera Corp | Illuminating light source |
| CN101026208B (en) * | 2006-02-24 | 2011-05-11 | 华宏光电子(深圳)有限公司 | Light-emitting diode and its preparing method |
| CN102593326A (en) * | 2012-03-12 | 2012-07-18 | 江门昊坤光电科技有限公司 | Light-emitting diode (LED) packaging structure and process based on fluorescent powder dispersive excitation technology |
-
2015
- 2015-12-25 CN CN201511003489.9A patent/CN105489737A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101026208B (en) * | 2006-02-24 | 2011-05-11 | 华宏光电子(深圳)有限公司 | Light-emitting diode and its preparing method |
| JP2009004698A (en) * | 2007-06-25 | 2009-01-08 | Kyocera Corp | Illuminating light source |
| CN102593326A (en) * | 2012-03-12 | 2012-07-18 | 江门昊坤光电科技有限公司 | Light-emitting diode (LED) packaging structure and process based on fluorescent powder dispersive excitation technology |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108305932A (en) * | 2018-03-08 | 2018-07-20 | 北京大学东莞光电研究院 | A kind of specular removal white light LAMP-LED structures and packaging method |
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Application publication date: 20160413 |