CN100594462C - Energy-gap reference circuit - Google Patents
Energy-gap reference circuit Download PDFInfo
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- CN100594462C CN100594462C CN200710096007A CN200710096007A CN100594462C CN 100594462 C CN100594462 C CN 100594462C CN 200710096007 A CN200710096007 A CN 200710096007A CN 200710096007 A CN200710096007 A CN 200710096007A CN 100594462 C CN100594462 C CN 100594462C
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Abstract
The invention relates to an energy gap reference circuit, comprising a current generator which is used for generating an output current, comprises a first reference unit and a plurality of second reference units in parallel and can determine the value of the output current according to the reference unit; a first resistance which is coupled between a first terminal of the first reference unit anda node and is used for transmitting a first current; a second resistance which is coupled to the node and first terminals of each second reference unit and is used for transmitting a second current; athird resistance which is coupled between the node and an output terminal of the energy gap reference circuit and is used for transmitting a third current; and a current/voltage converter which is coupled to the third resistance and is used for generating an energy gap voltage with the third current according to the output current.
Description
Technical field
The present invention relates to the generation of energy gap voltage (Bandgap Voltage), particularly relate to a kind of energy gap reference circuit (Bandgap Reference Circuit).
Background technology
Please refer to Fig. 1, Fig. 1 is the synoptic diagram of known energy gap reference circuit (Bandgap Reference Circuit) 100.As shown in Figure 1, the electric current I in the energy gap reference circuit 100 1 is for being directly proportional (Proportional To Absolute Temperature, electric current PTAT) (generally being commonly referred to as the PTAT electric current) with absolute temperature.Electric current I 1 and bipolar junction transistor (Bipolar Junction Transistor, BJT) Q1-0, Q1-1, Q1-2 ..., relevant with Q1-N and resistance R 1, and can represent by following equation:
I1＝V
T*ln(N)/R1；
Wherein heat is as voltage (Thermal Voltage) V
T=(k*T)/and q, k then represents Boltzmann's constant (Boltzmann Constant), and T represents absolute temperature, and q represents quantities of charge.
In addition, electric current I 2 in the energy gap reference circuit 100 can be described as and becomes complementary (Complementary To Absolute Temperature with absolute temperature, CTAT) electric current (generally be commonly referred to as the CTAT electric current, it has along with absolute temperature increases and the characteristic of minimizing).Electric current I 2 is relevant with bipolar junction transistor Q1-0 and resistance R 2, and can represent by following equation:
I2＝V
EB0/R2；
V wherein
EB0The emitter-base bandgap grading (Emitter) of representing bipolar junction transistor Q1-0 is to base stage (Base) voltage.
The energy gap voltage VREF that energy gap reference circuit 100 is exported at its lead-out terminal produces according to (I1+I2), and energy gap voltage VREF can represent by following equation:
VREF＝(I1+I2)*R3
＝(R3/R2)*(V
EB0+(R2/R1)*ln(N)*V
T)。
With reference to figure 2, Fig. 2 is the synoptic diagram of known energy gap reference circuit 200, P-type mos (Metal Oxide Semiconductor wherein, MOS) transistor M1 ', M2 ' and M3 ' also can adopt P-type mos transistor M1, M2 shown in Figure 1 respectively, implement with M3, amplifier 210 also can adopt amplifier shown in Figure 1 110 to implement, and diode D2-0, D2-1, D2-2 ..., with D2-N also can adopt respectively described bipolar junction transistor Q1-0, Q1-1, Q1-2 ..., implement with Q1-N.Electric current I 1 ' in the energy gap reference circuit 200 can be represented by following equation:
I1’＝ΔV
EB’/R1’................................(1)；
Δ V wherein
EB' represent diode cross-pressure V at this
D2-0With V
D2-1(V
D2-2, V
D2-3..., V
D2-N) difference; The diode cross-pressure is the voltage between the diode two-terminal.Note that voltage V
EBIf ' according to the viewpoint of broad sense then can represent voltage between diode (for example diode D2-0) two-terminal, if in the time of then can representing the above-mentioned bipolar junction transistor of employing to implement diode (for example diode D2-0) according to the viewpoint of narrow sense, the voltage between the diode two-terminal.
In addition, the electric current I 2 ' in the energy gap reference circuit 200 can be represented by following equation:
I2’＝(V
EB’-VREF’)/R2’............................(2)；
Wherein VREF ' represents the energy gap voltage that energy gap reference circuit 200 is exported at its lead-out terminal.Energy gap voltage VREF ' also can represent by following equation:
VREF’＝(I1’+3*I2’)*R3’...........................(3)。
With equation (1) and (2) substitution equation (3), can get:
VREF’＝C*((R2’/(3*R1’))*ΔV
EB’+V
EB’)............(4)；
C=(3*R3 ')/(R2 '+3*R3 ') wherein.With Δ V
EB'=V
T* ln (N) substitution equation (4) can get:
VREF’＝C*((R2’/(3*R1’))*V
T*ln(N)+V
EB’)。
According to known technology, if want to utilize as shown in Figure 2 produce energy gap voltage than new frame, need sizable circuit area to implement resistance R 2 ' usually.Especially when the low-voltage condition, diode D2-1, D2-2 shown in Figure 2 ..., D2-N each all need bigger circuit area, so its quantity N is quite limited, can not arbitrarily increase according to design.Because the quantity N of above-mentioned diode can not arbitrarily increase, adopting bigger circuit area to implement resistance R 2 ' can become corollary in some cases; This just can reduce the economic benefit when producing in batches.Therefore, known technology still has the space of further improvement.
Summary of the invention
One of purpose of the present invention is to provide energy gap reference circuit (Bandgap Reference Circuit).A kind of energy gap reference circuit is provided in one embodiment of the invention, is used for producing an energy gap voltage (Bandgap Voltage).This energy gap reference circuit includes: a current generator, be used for producing an output current, this current generator comprises a plurality of reference units, these a plurality of reference units comprise one first reference unit and a plurality of second parallel reference units, this current generator can determine the size of this output current according to these a plurality of reference units, wherein the first of this output current is the electric current with negative temperature coefficient, and the second portion of this output current is the electric current with positive temperature coefficient (PTC); One first resistance is coupled between the first terminal (Terminal) and a node of this first reference unit, is used for transmitting (Transmit) one first electric current; One second resistance is coupled to the first terminal of this node and each second reference unit, is used for transmitting one second electric current; One the 3rd resistance is coupled between the lead-out terminal of this node and this energy gap reference circuit, is used for transmitting one the 3rd electric current, the size of the 3rd electric current equal the size of this first electric current and this second electric current size and; And a current/voltage converter (Current-to-voltage Converter), be coupled to the 3rd resistance, be used for producing this energy gap voltage according to this output current and the 3rd electric current.
The present invention also provides a kind of energy gap voltage method that is used for producing accordingly when above-mentioned energy gap reference circuit is provided.This method includes: a current generator is provided, and this current generator comprises a plurality of reference units, and with the size that decides an output current, these a plurality of reference units comprise one first reference unit and a plurality of second parallel reference units; One first resistance, one second resistance and one the 3rd resistance are provided; One current/voltage converter is provided; This first resistance is coupled between the first terminal and a node of this first reference unit, to transmit one first electric current; This second resistance is coupled to the first terminal of this node and each second reference unit, to transmit one second electric current; The 3rd resistance is coupled between the lead-out terminal of this node and this energy gap reference circuit, transmitting one the 3rd electric current, the size of the 3rd electric current equal the size of this first electric current and this second electric current size and; Utilize (Utilize) this current generator to produce this output current, wherein the first of this output current is the electric current with negative temperature coefficient, and the second portion of this output current is the electric current with positive temperature coefficient (PTC); And utilize this current/voltage converter to produce this energy gap voltage according to this output current and the 3rd electric current.
Description of drawings
Fig. 1 is the synoptic diagram of known energy gap reference circuit (Bandgap Reference Circuit).
Fig. 2 is the synoptic diagram of known energy gap reference circuit.
The synoptic diagram of the energy gap reference circuit that provided in one embodiment of the invention is provided Fig. 3.
The synoptic diagram of the energy gap voltage that Fig. 4 is produced under the PTNT condition for energy gap reference circuit shown in Figure 2.
The synoptic diagram of the energy gap voltage that Fig. 5 is produced under the PTNT condition for energy gap reference circuit shown in Figure 3.
The synoptic diagram of the energy gap voltage that Fig. 6 is produced under the PFNF condition for energy gap reference circuit shown in Figure 2.
The synoptic diagram of the energy gap voltage that Fig. 7 is produced under the PFNF condition for energy gap reference circuit shown in Figure 3.
The synoptic diagram of the energy gap voltage that Fig. 8 is produced under the PSNS condition for energy gap reference circuit shown in Figure 2.
The synoptic diagram of the energy gap voltage that Fig. 9 is produced under the PSNS condition for energy gap reference circuit shown in Figure 3.
Figure 10 is at energy gap reference circuit shown in Figure 3 comparison sheet with the corresponding resistance value of energy gap reference circuit shown in Figure 2 in one embodiment of the invention.
The reference numeral explanation
| 100，200，300 | The energy |
| 110，210，310 | Amplifier |
| D2-0，D2-1，D2-2，...， D2-N， D3-0，D3-1，D3-2，...，D3-N | Diode |
| M1，M2，M3，M1’，M2’，M3’， M1”，M2”，M3” | The P-type mos transistor |
| Q1-0，Q1-1，Q1-2，...，Q1-N | Bipolar junction transistor |
| R1，R2，R3，R1’，R2’，R3’， R1”，R2”，R3”，RA | Resistance |
| A | Node |
| I1，I2，(I1+I2)， I1’，I2’，(I1’+I2’)， I1”，I2”，IA，(I1”+ IA) | Electric current |
| VA | Node voltage |
| VCC | Operating voltage |
| VREF，VREF’，VREF” | Energy gap voltage |
Embodiment
Please refer to Fig. 3, the synoptic diagram of the energy gap reference circuit (Bandgap Reference Circuit) 300 that provided in the first embodiment of the present invention is provided Fig. 3.Energy gap reference circuit 300 includes a current generator, and wherein this current generator comprises a plurality of reference units, and these a plurality of reference units comprise one first reference unit and a plurality of second parallel reference units.In the present embodiment, this first reference unit is diode D3-0, and these a plurality of second reference units be diode D3-1, D3-2 ... with D3-N, wherein diode D3-0, D3-1, D3-2 ..., with D3-N can adopt respectively diode D2-0, D2-1 shown in Figure 2, D2-2 ..., implement with D2-N, also can adopt respectively bipolar junction transistor shown in Figure 1 (Bipolar Junction Transistor, BJT) Q1-0, Q1-1, Q1-2 ..., implement with Q1-N.
According to embodiment shown in Figure 3, this current generator also comprises resistance R 1 ", amplifier 310, a plurality of P-type mos (Metal Oxide Semiconductor; MOS) transistor; wherein amplifier 310 also can adopt above-mentioned amplifier 210 or 110 to implement; and P-type mos transistor M1 ", M2 " and M3 " can adopt above-mentioned P-type mos transistor M1 ', M2 ' and M3 ' to implement respectively, also can adopt above-mentioned P-type mos transistor M1, M2 respectively, implement with M3.
As shown in Figure 3, P-type mos transistor M1 ", M2 " and M3 " in each grid (Gate) all be coupled to a lead-out terminal of amplifier 310, P-type mos transistor M1 ", M2 " and M3 " in each source electrode (Source) all be coupled to an operating voltage VCC.In addition, P-type mos transistor M1 " drain electrode (Drain) be coupled to this first reference unit; wherein first reference unit of present embodiment is diode D3-0; P-type mos transistor M1 " drain electrode be coupled to the plus end of diode D3-0, and the negative terminal of diode D3-0 is coupled to a datum (Reference Level), earth level for example shown in Figure 3 (Ground Level).In addition, metal oxide semiconductor transistor M2 " drain electrode be coupled to resistance R 1 " the top terminal, and resistance R 1 " the below terminal be coupled to each second reference unit; wherein second reference unit of present embodiment be diode D3-1, D3-2 ... with D3-N; each diode D3-1, D3-2 ..., the plus end of D3-N is coupled to resistance R 1 " the below terminal, and each diode D3-1, D3-2 ..., the negative terminal of D3-N is coupled to a datum, earth level for example shown in Figure 3.According to present embodiment, amplifier 310 includes a positive input terminal and negative input end, is coupled to resistance R 1 respectively " the top terminal and the plus end of diode D3-0.
According to this first embodiment, energy gap reference circuit 300 also includes three resistance, is coupled to each other in node A, and wherein resistance R 2 " also be coupled to right-hand lead-out terminal of energy gap reference circuit 300 (promptly indicate energy gap voltage VREF " locate).In the present embodiment, the size of the resistance value of node A left side resistance (Substantially) in fact equals the size of the resistance value of node A right side resistance, so all be denoted as RA at this.As shown in Figure 3, energy gap reference circuit 300 also includes a current/voltage converter (Current-to-voltage Converter), be coupled to right-hand lead-out terminal of energy gap reference circuit 300, wherein the current/voltage converter of present embodiment is a resistance R 3 "; resistance R 3 " the top terminal be coupled to resistance R 2 " with the lead-out terminal of energy gap reference circuit 300; and resistance R 3 " the below terminal be coupled to a datum, for example above-mentioned earth level.
As shown in Figure 3, node A left side resistance is coupled between the plus end of node A and diode D3-0, with with P-type mos transistor M1 " the electric current exported of drain electrode (I1 "+electric current I A in IA) transmits (Transmit) to node A, remaining electric current I 1 " then be transferred into the plus end of diode D3-0.Similarly, node A right side resistance is coupled to node A and resistance R 1 " the top terminal between; with P-type mos transistor M2 " the electric current exported of drain electrode (I1 "+electric current I A in IA) is sent to node A, remaining electric current I 1 " then by resistance R 1 " be sent to diode D3-1, D3-2 ..., with the plus end of D3-N.In addition, resistance R 2 " then with electric current I 2 " be sent to resistance R 3 from node A " and the top terminal, wherein electric current I 2 " size equal respectively the two electric current I A that transmitted by two resistance R A size and, i.e. I2 "=2*IA.
The current generator of present embodiment produce an output current (I1 "+IA); and by P-type mos transistor M3 " drain electrode with output current (I1 "+IA) export resistance R 3 to " the top terminal, wherein this current generator can according to these a plurality of reference units determine output currents (I1 "+IA) size.Above-mentioned current/voltage converter (be resistance R 3 in the present embodiment ") can according to output current (I1 "+IA) with electric current I 2 " produce energy gap voltage VREF ".According to present embodiment, this current/voltage converter with output current (I1 "+IA) with electric current I 2 " total current (I1 "+IA+I2 ") be converted to energy gap voltage VREF ", I2 wherein "=2*IA, so this total current be (I1 "+3*IA).Please note, output current (I1 "+first in IA) (be electric current I 1 ") for having the electric current of negative temperature coefficient, and output current (I1 "+IA) second portion (being electric current I A) electric current for having positive temperature coefficient (PTC), and the output current of present embodiment (I1 "+IA) this first and this second portion is equidirectional electric current.Present embodiment by this total current (I1 "+electric current I 1 of negative temperature coefficient in 3*IA) " with the complementary characteristic of the electric current (3*IA) of positive temperature coefficient (PTC), make the total current that energy gap reference circuit 300 produced in designing appropriate opereating specification in advance (I1 "+3*IA) constant in fact to variation of temperature, produce by this constant in fact energy gap voltage VREF of variation of temperature ".The principle of work of energy gap reference circuit 300 is described as follows:
I1”＝ΔV
EB”/R1”.............................(5)；
Δ V wherein
EB" represent diode cross-pressure V in the present embodiment
D3-0With V
D3-1(V
D3-2, V
D3-3..., V
D3-N) difference; The diode cross-pressure is the voltage between the diode two-terminal.Note that voltage V
EBIf " according to the viewpoint of broad sense then can represent voltage between diode (for example diode D3-0) two-terminal; if then can represent when adopting above-mentioned bipolar junction transistor to implement diode (for example diode D3-0) voltage between the diode two-terminal according to the viewpoint of narrow sense.In addition, the electric current I A in the energy gap reference circuit 300 can represent by following equation:
IA＝(V
EB”-VA)/RA...............................(6)；
The voltage of VA representation node A wherein.In addition, the electric current I 2 in the energy gap reference circuit 300 " can represent by following equation:
I2”＝(VA-VREF”)/R2”＝2*IA....................(7)。
Can get by equation (6) and (7):
VA＝(2*R2”*V
EB”+RA*VREF”)/(RA+2*R2”)...(8)。
With equation (8) substitution equation (6), can get:
IA＝(V
EB”-VREF”)/(RA+2*R2”).............(9)。
In addition, energy gap voltage VREF " can represent by following equation:
VREF”＝(I1”+3*IA)*R3”...................(10)。
With equation (5) and equation (9) substitution equation (10), can get:
VREF”＝C31*(C32*ΔV
EB”+V
EB”)............(11)；
Wherein
C31=(3*R3 ")/(RA+2*R2 "+3*R3 "), and
C32＝(RA+2*R2”)/(3*R1”)。
Following according to some operating conditions, the energy gap reference circuit 300 that this first embodiment is provided compares with known energy gap reference circuit 200, wherein the scope of operating voltage VCC is 0.9V to 1.1V, the scope that operation connects surface temperature (Operating Junction Temperature) is-40 ℃ to 125 ℃, and the processing procedure that is used for making chip is 90 nanometers (nm) processing procedures.Therefore, the shared area of the shared area of the diode D3-0 in the energy gap reference circuit 300 and the diode D2-0 in the energy gap reference circuit 200 is consistent, is the size of 98 microns of 98 microns (μ m) *.Similarly, diode D3-1, the D3-2 in the energy gap reference circuit 300 ..., the shared area of D3-N and diode D2-1, D2-2 in the energy gap reference circuit 200 ..., the shared area unanimity of D2-N.Next use several process variation conditions (referring to so-called " Process Corner " especially) PTNT, PFNF, further specify with PSNS, wherein each figure in the middle of Fig. 4 to Fig. 9 has illustrated three simulation curves that the circuit simulation program is produced, three curves from top to bottom correspond respectively to 1.1V, 1.0V, with the operating voltage VCC of 0.9V.
Please refer to Fig. 4 and Fig. 5, the synoptic diagram of the energy gap voltage VREF ' that Fig. 4 is produced under the PTNT condition for energy gap reference circuit 200 shown in Figure 2, the energy gap voltage VREF that Fig. 5 is then produced under the PTNT condition for energy gap reference circuit 300 shown in Figure 3 " synoptic diagram; wherein this two sets of curves is similar, represents energy gap reference circuit 300 can reach the usefulness similar to energy gap reference circuit 200.
Please refer to Fig. 6 and Fig. 7, the synoptic diagram of the energy gap voltage VREF ' that Fig. 6 is produced under the PFNF condition for energy gap reference circuit 200 shown in Figure 2, the energy gap voltage VREF that Fig. 7 is then produced under the PFNF condition for energy gap reference circuit 300 shown in Figure 3 " synoptic diagram; wherein this two sets of curves is similar, represents energy gap reference circuit 300 can reach the usefulness similar to energy gap reference circuit 200.
Please refer to Fig. 8 and Fig. 9, the synoptic diagram of the energy gap voltage VREF ' that Fig. 8 is produced under the PSNS condition for energy gap reference circuit 200 shown in Figure 2, the energy gap voltage VREF that Fig. 9 is then produced under the PSNS condition for energy gap reference circuit 300 shown in Figure 3 " synoptic diagram; wherein this two sets of curves is similar, represents energy gap reference circuit 300 can reach the usefulness similar to energy gap reference circuit 200.
Followingly change example (it is the special status of this first embodiment), at employed resistance R 1 in the energy gap reference circuit 300 according to one of this first embodiment ", RA, R2 " and R3 " all-in resistance (R1 "+2*RA+R2 "+R3 ") and energy gap reference circuit 200 in the all-in resistance (R1 '+2*R2 '+R3 ') of employed resistance R 1 ', R2 ' and R3 ' compare.Change example, amplifier 310 shown in Figure 3, P-type mos transistor M1 according to this ", M2 " and M3 " and diode D3-0, D3-1, D3-2 ..., with D3-N adopt respectively amplifier shown in Figure 2 210, P-type mos transistor M1 ', M2 ' and M3 ' and diode D2-0, D2-1, D2-2 ..., implement with D2-N.In addition, resistance R 1 shown in Figure 3 " and R3 " adopt respectively resistance R 1 ' shown in Figure 2 and R3 ' implement (be R1 "=R1 ', and R3 "=R3 ').If utilize energy gap reference circuit 300 to produce the energy gap voltage VREF identical with energy gap voltage VREF ' size " (be VREF "=VREF '), then can be with equation (11) and (4) substitution VREF "=VREF ' and abbreviation in addition:
RA+2*R2”＝R2’。
So, above-mentioned all-in resistance (R1 '+2*R2 '+R3 ') and all-in resistance (R1 "+2*RA+R2 "+R3 ") between the two difference can be calculated as follows:
(R1’+2*R2’+R3’)-(R1”+2*RA+R2”+R3”)
＝(R1”+2*R2’+R3”)-(R1”+2*RA+R2”+R3”)
＝(2*R2’)-(2*RA+R2”)
＝(2*(RA+2*R2”))-(2*RA+R2”)
＝3*R2”；
That is to say that energy gap reference circuit 300 can be saved with respect to energy gap reference circuit 200 and be equivalent to three times of resistance R 2 " shared circuit area.Therefore, with respect to known energy gap reference circuit 200, the invention provides the specific implementation method that improves output.
Figure 10 is at energy gap reference circuit 300 shown in Figure 3 comparison sheet with the corresponding resistance value of energy gap reference circuit 200 shown in Figure 2 in one embodiment of the invention, employed resistance R 1 in the energy gap reference circuit 300 wherein "; RA; R2 ", with R3 " all-in resistance (R1 "+2*RA+R2 "+R3 ") be about employed resistance R 1 ' in the energy gap reference circuit 200, R2 ', with 31.35% of the all-in resistance of R3 ' (R1 '+2*R2 '+R3 '), represent employed resistance R 1 in the energy gap reference circuit 300 "; RA; R2 ", with R3 " the total area be about employed resistance R 1 ' in the energy gap reference circuit 200; R2 '; with 31.35% of the total area of R3 '.
Variation example according to this first embodiment, these a plurality of reference units also can adopt dynamic threshold (Dynamic Threshold) metal oxide semiconductor transistor to implement respectively, and the dynamic threshold metal oxide semiconductor transistor that wherein should change example especially is dynamic threshold N type metal oxide semiconductor (DTNMOS) transistor.
According to another variation example of this first embodiment, these a plurality of reference units also can adopt the metal oxide semiconductor transistor that operates in weak inversion (Weak Inversion) district to implement respectively.
The above only is preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (19)
1. an energy gap reference circuit is used for producing an energy gap voltage, and this energy gap reference circuit includes:
One current generator, be used for producing an output current, this current generator comprises a plurality of reference units, these a plurality of reference units comprise one first reference unit and a plurality of second reference unit that is parallel to each other, this current generator can determine the size of this output current according to this first reference unit and these a plurality of second reference units, wherein the first of this output current is the electric current with negative temperature coefficient, and the second portion of this output current is the electric current with positive temperature coefficient (PTC);
One first resistance is coupled between the first terminal and a node of this first reference unit, is used for transmitting one first electric current;
One second resistance is coupled to a first terminal of this node and each second reference unit, is used for transmitting one second electric current;
One the 3rd resistance is coupled between the lead-out terminal of this node and this energy gap reference circuit, is used for transmitting one the 3rd electric current, and the size of the 3rd electric current equals the size of this first electric current and the big or small sum of this second electric current; And
One output resistance is coupled to the 3rd resistance, is used for producing this energy gap voltage according to this output current and the 3rd electric current,
Wherein when this first reference unit and these a plurality of second reference units are diode, the first terminal of this first reference unit is positive poles of diode with the first terminal of these a plurality of second reference units, and when this first reference unit and these a plurality of second reference units are bipolar junction transistor, the first terminal of this first reference unit is emitter-base bandgap gradings of bipolar junction transistor with the first terminal of these a plurality of second reference units
Wherein this current generator also includes:
One the 4th resistance, it includes a first terminal and one second terminal, and this second terminal is coupled to this first terminal of each second reference unit;
One amplifier, it includes a positive input terminal, is coupled to this first terminal of the 4th resistance, and negative input end, is coupled to this first terminal of this first reference unit; And
A plurality of P-type mos transistors, wherein the transistorized grid of each P-type mos is coupled to a lead-out terminal of this amplifier, and the transistorized source electrode of each P-type mos is coupled to an operating voltage.
2. energy gap reference circuit as claimed in claim 1, wherein this first reference unit is diode with these a plurality of second reference units.
3. energy gap reference circuit as claimed in claim 1, wherein this first reference unit is transistor with these a plurality of second reference units, and this transistor is a bipolar junction transistor.
4. energy gap reference circuit as claimed in claim 1, wherein this first reference unit is transistor with these a plurality of second reference units, and this transistor is the dynamic threshold metal oxide semiconductor transistor.
5. energy gap reference circuit as claimed in claim 1, wherein this first reference unit is transistor with these a plurality of second reference units, and this transistor is the metal oxide semiconductor transistor that operates in weak inversion region.
6. energy gap reference circuit as claimed in claim 1, wherein each reference unit in this first reference unit and these a plurality of second reference units comprises one second terminal that is coupled to a datum.
7. energy gap reference circuit as claimed in claim 6, wherein this datum is an earth level.
8. energy gap reference circuit as claimed in claim 1, these a plurality of P-type mos transistors include:
One first P-type mos transistor, its drain electrode are coupled to this first terminal of this first reference unit;
One second P-type mos transistor, its drain electrode are coupled to this first terminal of the 4th resistance; And
One the 3rd P-type mos transistor, this outputs current to this output resistance its drain electrode output.
9. energy gap reference circuit as claimed in claim 1, wherein the size of the resistance value of this first resistance equals the size of the resistance value of this second resistance.
10. energy gap reference circuit as claimed in claim 1, wherein this first electric current and this second electric current are the electric current with positive temperature coefficient (PTC).
11. energy gap reference circuit as claimed in claim 1, wherein the first of this output current and second portion are equidirectional electric current.
12. energy gap reference circuit as claimed in claim 1, wherein the size of the first of this output current equals to input to from the first terminal of this first reference unit the size of the electric current of this first reference unit, and the size of the second portion of this output current equals the size of this first electric current or the size of this second electric current.
13. energy gap reference circuit as claimed in claim 1, wherein this output resistance is converted to this energy gap voltage with this output current and the 3rd electric current with formed total current.
14. energy gap reference circuit as claimed in claim 1, wherein this output resistance includes a first terminal, is coupled to the 3rd resistance, and one second terminal, is coupled to a datum.
15. energy gap reference circuit as claimed in claim 14, wherein this datum is an earth level.
16. one kind is used for producing an energy gap voltage method, this method includes:
One current generator is provided, and this current generator comprises a plurality of reference units, and with the size that decides an output current, these a plurality of reference units comprise one first reference unit and a plurality of second reference unit that is parallel to each other;
One first resistance, one second resistance and one the 3rd resistance are provided;
One output resistance is provided;
This first resistance is coupled between the first terminal and a node of this first reference unit, to transmit one first electric current;
This second resistance is coupled to a first terminal of this node and each second reference unit, to transmit one second electric current;
The 3rd resistance is coupled between the lead-out terminal of this node and this energy gap reference circuit, transmitting one the 3rd electric current, the size of the 3rd electric current equal the size of this first electric current and this second electric current size and;
Utilize this current generator to produce this output current, wherein the first of this output current is the electric current with negative temperature coefficient, and the second portion of this output current is the electric current with positive temperature coefficient (PTC); And
Utilize this output resistance to produce this energy gap voltage according to this output current and the 3rd electric current,
Wherein when this first reference unit and these a plurality of second reference units are diode, the first terminal of this first reference unit is positive poles of diode with the first terminal of these a plurality of second reference units, and when this first reference unit and these a plurality of second reference units are bipolar junction transistor, the first terminal of this first reference unit is emitter-base bandgap gradings of bipolar junction transistor with the first terminal of these a plurality of second reference units
Wherein this current generator also comprises:
One the 4th resistance, it includes a first terminal and one second terminal, and this second terminal is coupled to this first terminal of each second reference unit;
One amplifier, it includes a positive input terminal, is coupled to this first terminal of the 4th resistance, and negative input end, is coupled to this first terminal of this first reference unit; And
A plurality of P-type mos transistors, wherein the transistorized grid of each P-type mos is coupled to a lead-out terminal of this amplifier, and the transistorized source electrode of each P-type mos is coupled to an operating voltage.
17. method as claimed in claim 16 wherein utilizes this output resistance also to include according to the step that this output current and the 3rd electric current produce this energy gap voltage:
Utilize this output resistance that this output current and the 3rd electric current be converted to this energy gap voltage with formed total current.
18. method as claimed in claim 16, wherein this first reference unit and these a plurality of second reference units comprise respectively at least one diode and at least one transistorized one of them.
19. method as claimed in claim 16, wherein the size of the resistance value of this first resistance equals the size of the resistance value of this second resistance.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200710096007A CN100594462C (en) | 2007-04-10 | 2007-04-10 | Energy-gap reference circuit |
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| CN200710096007A CN100594462C (en) | 2007-04-10 | 2007-04-10 | Energy-gap reference circuit |
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| CN100594462C true CN100594462C (en) | 2010-03-17 |
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| CN103092251A (en) * | 2011-11-01 | 2013-05-08 | 慧荣科技股份有限公司 | Band gap reference voltage generating circuit |
| CN103197722A (en) * | 2013-03-29 | 2013-07-10 | 东南大学 | Low-static-power current-mode band-gap reference voltage circuit |
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